The 1974 RCA Triac SCR and Diacs Data Book

Thyristors, Rectifiers
and Diacs
Selection Guide
Data
Application Notes
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Thyristors, Rectifiers,and Diacs

This DATABOOK
contains complete data and related application notes on thyristors,
rectifiers, and diacs presently
available from RCA Solid State Division as standard products.
The new RCA type-numbering
system for these devices is
explained, and product matrix charts are given on pages 14-24
for ease of type selection. Data sheets are then grouped in the
following categories: (a) triacs, (b) silicon controlled rectifiers,
(c) rectifiers, (d) diacs. Application
notes are included in
numerical order following the data sheets.
A feature of this DATABOOK is the complete Guide to RCA

Solid State Devices at the back of the book. This section
includes a developmental-to-commercial-number
cross-reference
index, a comprehensive subject index, and a complete index to
all standard devices in the solid-state product line: linear integrated circuits, MOS field-effect (MOS/F ET) devices, COS/MOS
integrated circuits, power transistors, power hybrid circuits, rf
power devices, thyristors, rectifiers, and diacs. All listings include
references to volume number and page number in the 1974 7volume DAT ABOO K series described on the facing page.
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New RCA Type-Numbering
Index to Thyristors,
System . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Rectifiers, and Diacs
6
8
Cross-Reference of Old to New Type Numbers
11
Index to Application
13
Notes
Triac Product Matrix
14
SCR Product Matrix
18
Rectifier Product Matrix
22
Application
25
Information
Technical Data:
Triacs
Silicon Controlled
Rectifiers
Diacs
Application
27
137
251
349
Rectifiers (SCR's)
Notes
Guide to RCA Solid State Devices:

Developmental-to-Commercial-Number
Military (JAN and JAN-TX) Types
Subject Index
Index to Devices
353
Cross-Reference Index
504
510
511
526
A new system of type numbers has been adopted for all RCA triacs, SCR's, rectifiers,
100-,40000-,41000-,43000-,44000-,
and diacs previously
identified
by
and 45000-series numbers. Type numbers for JEDEC (IN- and 2N-series) devices,
which are registered with the Joint Electron Devices Engineering Council of the Electronic
Industries Association
(EIA), are
not affected.
The new type
immediately
numbers for
non-JEDEC
RCA thyristors,
rectifiers,
and diacs consist of an alpha-numeric
identifies the basic type of device and provides information
type is indicated by the initial

numbers following
the initial
letter of the type-number
on significant
code that
device features. The basic product
designation; i.e., T = triac, S = SCR, and 0 = rectifier
or diac. The
letter indicate device current ratings, type of package, and electrical variants within
a series.
The suffix letter(s) define the voltage rating of the device.

Sixteen suffix letters are used to represent specific voltage ratings in the range from 15 to 1000 volts. Combinations
of these
letters can be used to indicate voltage ratings that differ from the sixteen basic values. (For example, the suffix OF is used
for a voltage rating of 450 volts; i.e., 0 + F = 400 + 50 = 450 volts.)
The charts and matrix shown below provide a detailed explanation of the new type number codes. For convenience of type
selection, the "old"
"old"
numbers are included
in the index to devices on pages 8-10, and a cross-reference guide that relates
type numbers to the new numbers that replace them is provided on pages 11-12.
~
I
Graphic Representation of Thyristor

Numbering System
Graphic Representation of Rectifier and

Diac Numbering System
Indicates
Rectifier
or Diac
Indicates Type
1 = Standard
2 ~ Fast
Recovery
3 ~ Diac
QJJ~J,0,
Indicates
Package
1 = 00-1
2 = 00-15
3 = TO-l
4 = 00-4
5 = 00-5
6 = 00-26
7 = 00-26
Indicates
Average
Current
Rating 10
(00 indicates
1 A)
'a <
Insulated
qJ .c~J,0,
Voltage
Designation
Q = 15 V
U = 25 V
Y = 30 V
F = 50 V
A = 100 V
G = 150 V
B ~ 200 V
H = 250 V
C = 300 V
0= 400 V
E = 500 V
M ~ 600 V
S = 700 V
N = 800 V
T = 900 V
P = 1000 V
PA=1100V
P8 = 1200 V
Indicates
Type
T = Triac
S = SCR
Indicates
Broad Generic
Classification
on basis of
IT( RMS) Rating
Identifies
Package
Variants
Id~esl
Electrical
Variants
__ 1_IT(RMS)
Ratings (A)
Standard
Devices
Fast-Turnoff
Devices
0-2.5
2.5 - 8
8 - 15
15 - 40
>40
00
20
40
60
80
10
30
50
70
90
- 09
- 29
- 49
- 69
- 89
Voltage
Designation
(as shown
at left)
- 19
- 39
- 59
- 79
- 99
(NOTE: The first five digits, e.g., T2300, provide the

basic device series designation_)
Thyristor Numbering Matrix

TRIACS
Generic Class
Package Variants
Electrical Variants
T23 : 2.5A sensitive-gate types
0: TO-5
1 : TO-5 with radiator
0:
1:
3:
4:
5:
6:
IGT
IGT
IGT
IGT
IGT
IGT
0: Mod. TO-5
2 : TO-5 with heat spreader
0:
1
4 :
6 :
IGT = 25 mA
IGT = 50 mA; 1+ and 111- modes
IGT = 4.25 mA; 400-Hz type
zero-voltage-switch type
0: TO-66
0: TO-66
=
=
=
=
~
=
3 mA
4 mA
25 mA
10 mA; 400-Hz type
25 mA; 400-Hz type
25 mA; zero-voltage-switch
type
Thyristor Numbering Matrix

TRIACS (cont'd)
Package Variants
o : press fit
1 : stud
2 : iso lated stud
0:
1 :
4:
5:
6:
7 :
IT(RMS) = 15 A
IT(RMS) = 10 A
IT(RMS) = 15 A; 400-Hz type
IT(RMS) = 15 A; zero-voltage-switch
type
type
0: IGT = 25 mA
1 : IGT = BO mA; 1+ and 111- modes
6 : zero-voltage-switch type
0: VERSAWATT
5: ISOWATT
0: IGT = 25 mA
1 : IGT = BO mA; 1+ and 111- modes
6 : zero-voltage-switch type
o : press-fit
0:
1 :
4:
5:
6:
7:
1 : stud
2 : iso lated stud
IT(RMS) = 40 A
IT(RMS) = 30 A
IT(RMSI = 40 A; zero-voltage-switch
o : press-fit,
o : IT(RMS)
1
2
3
4
5
1 : IT(RMS)
:
:
:
:
:
flexible leads
stud, flexible leads
isolated stud, flexible leads
press-fit
stud
isolated stud
=
=
BO A
60 A
SCA's
Generic Class
Package Variants
Electrical Variants
S20 : 4-A plastic types
6: VERSAWATT
o : IGT
S22 : 2-A types
0: TO-B
S24 : 4_5-A types
0: TO-B
S26 : 7-A types
o : low-profile
= 0_2 mA
1 : IGT = 0_5 mA
2 : IGT = 2_0 mA
TO-5
1 : modified TO-5 with radiator
2 : modified TO-5 with heat spreader
0: TO-66
0:
1 :
2:
3:
4:
5:
6:
IGT = 40 mA; VGT = 4 V

IGT = 35 mA
IGT = 45 mA
VGT = 2 V
VGT = 3_5 V
IGT = 30 mA; V(SO) = 500 V
IGT = 30 mA; V(SO) = 400 V
S3B: ITR's
0: TO-66
S40 : 12_5-A types
0: TO-3
S62 . 1O-A and 20-A types
0 : press-fit
1 : stud
2 : isolated stud
o . IT(RMS)
S64 : 16-A, 25-A, and 35-A types
0: press-fit
1 : stud
2 : isolated stud
0: IT(RMS) = 35 A
1 : IT(RMS) = 25 A
2: IT(RMS) = 16 A
S74 : 35-A fast-turn-off
3 : TO-4B
types
= 20 A
1 : IT(RMS) = 10 A
type
type
Index to Thyristors, Rectifiers and Diacs

RCA
Type No.
Former
Data Sheet
Type No.- File No.
No.
Type of
Device
Current
(AI
Page
RCA
Type No.
Voltage
(V)
Former
Data Sheet
Type No.File No.
No.
Type of
Device
Page
Current
(A)
Voltage
(VI
lN248C
lN249C
lN250C
1N440B
lN441B
6
6
6
5
5
287
287
287
252
252
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
20
20
20
0.75
0.75
50
100
200
100
200
lN3910
1N3911
lN3912
1N3913
lN5211
729
729
729
729
245
342
342
342
342
270
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
30
30
30
30
1
100
200
300
400
200
lN442B
lN443B
lN444B
lN445B
lN536
5
5
5
5
3
252
252
252
252
255
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
0.75
0.75
0.75
0.75
0.75
300
400
500
600
50
lN5212
lN5213
lN5214
lN5215
lN5216
245
245
245
245
245
270
270
270
270
270
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
1
1
0.75
1
1
400
600
800
200
400
lN537
lN538
lN539
lN540
lN547
3
3
3
3
3
255
255
255
255
255
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
0.75
0.75
0.75
0.75
0.75
100
200
300
400
600
lN5217
lN5218
lN5391
lN5392
lN5393
245
245
478
478
478
270
270
273
273
273
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
1
0.75
1.5
1.5
1.5
600
800
50
100
200
lNl095
lN1183A
lN1184A
lNl186A
1N1187A
3
38
38
38
38
255
291
291
291
291
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
0.75
40
40
40
40
500
50
100
200
300
lN5394
lN5395
lN5396
lN5397
lN5398
478
478
478
478
478
273
273
273
273
273
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
1.5
1.5
1.5
1.5
1.5
300
400
500
600
800
lNl188A
1Nl189A
lNl190A
lNl195A
lN1196A
38
38
38
6
6
291
291
291
287
287
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
40
40
40
20
20
400
500
600
300
400
lN5399
2N681
2N682
2N683
2N684
478
96
96
96
96
273
225
225
225
225
Rectifier
SCR
SCR
SCR
SCR
1.5
25
25
25
25
1000
25
50
100
150
lN1197A
1N1198A
lN1199A
lN1200A
lN1202A
6
6
20
20
20
287
287
283
283
283
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
20
20
12
12
12
500
600
50
100
200
2N685
2N686
2N687
2N688
2N689
96
96
96
96
96
225
225
225
225
225
SCR
SCR
SCR
SCR
SCR
25
25
25
25
25
200
250
300
400
500
lN1203A
lN1204A
lN1205A
lN1206A
lN1341B
20
20
20
20
58
283
283
283
283
281
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
12
12
12
12
6
300
400
500
600
50
2N690
2N1842A
2N1843A
2N1844A
2N1845A
96
28
28
28
28
225
234
234
234
234
SCR
SCR
SCR
SCR
SCR
25
16
16
16
16
600
25
50
100
150
lN1342B
lN1344B
lN1345B
lN1346B
lN1347B
58
58
58
58
58
281
281
281
281
281
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
6
6
6
6
6
100
200
300
400
500
2N1846A
2N1847A
2N1848A
2N1849A
2N1850A
28
28
28
28
28
234
234
234
234
234
SCR
SCR
SCR
SCR
SCR
16
16
16
16
16
200
250
300
400
500
lN1348B
lN1763A
lN1764A
lN2858A
lN2859A
58
89
89
91
91
281
258
258
265
265
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
6
1
1
1
1
600
400
500
50
100
2N3228
2N3525
2N3528
2N3529
2N3650
114
114
114
114
408
144
144
144
144
238
SCR
SCR
SCR
SCR
SCR
5
5
2
2
35
200
400
200
400
100
lN2860A
lN2861A
lN2862A
lN2863A
lN2864A
91
91
91
91
91
265
265
265
265
265
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
1
1
1
1
1
200
300
400
500
600
2N3651
2N3652
2N3653
2N3654
2N3655
408
408
408
724
724
238
238
238
245
245
SCR
SCR
SCR
SCR
SCR
35
35
35
35
35
200
300
400
50
100
lN3193
lN3194
lN3195
lN3196
lN3253
41
41
41
41
41
294
294
294
294
294
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
0.75
0.75
0.75
0.5
0.75
200
400
600
800
200
2N3656
2N3657
2N3658
2N3668
2N3669
724
724
724
116
116
245
245
245
203
203
SCR
SCR
SCR
SCR
SCR
35
35
35
12.5
12.5
200
300
400
100
200
1N3254
lN3255
1N3256
lN3563
lN3879
41
41
41
41
726
294
294
294
294
323
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
0.75
0.75
0.5
0.4
6
400
600
800
1000
50
2N3670
2N3870
2N3871
2N3872
2N3873
116
578
578
578
578
203
218
218
218
218
SCR
SCR
SCR
SCR
SCR
12.5
35
35
35
35
400
100
200
400
600
lN3880
lN3881
lN3882
lN3883
lN3889
726
726
726
726
727
323
323
323
323
331
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
6
6
6
6
12
100
200
300
400
50
2N3896
2N3897
2N3898
2N3899
2N4101
578
578
578
578
114
218
218
218
218
144
SCR
SCR
SCR
SCR
SCR
35
35
35
35
5
100
200
400
600
600
lN3890
lN3891
1N3892
lN3893
lN3899
727
727
727
727
728
331
331
331
331
339
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
12
12
12
12
20
100
200
300
400
50
2N4102
2N4103
2N5441
2N5442
2N5443
114
116
593
593
593
144
203
55
55
55
SCR
SCR
Triac
Triac
Triac
2
12.5
40
40
40
600
600
200
400
600
lN3900
lN3901
1N3902
1N3903
1N3909
728
728
728
728
729
339
339
339
339
342
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
20
20
20
20
30
100
200
300
400
50
2N5444
2N5445
2N5446
2N5567
2N5568
593
593
593
457
457
55
55
55
92
92
Triac
Triac
Triac
Triac
Triac
40
40
40
10
10
200
400
600
200
400
Applies to RCA 100,40000,41000,43000,44000,
and 45000 Series ~umbers.
Index to Thyristors, Rectifiers and Diacs (cont'd)

RCA
Type No.
Former
Data Sheet
Type No.File No.
Page
No.
Type of
Device
Current
(A)
Voltage
(V)
RCA
Type No.
Former
Data Sheet
Type No.File No.
Page
No.
Type of
Device
IA)
Voltage
(V)
Current
2N5569
2N5570
2N5571
2N5572
2N5573
457
457
458
458
458
92
92
85
85
85
Triac
Triac
Triac
Triac
Triac
10
10
15
15
15
200
400
200
400
200
S2061M
S20610
S2061Y
S2062A
S20628
107M
1070
107Y
108A
1088
654
654
654
654
654
138
138
138
138
138
SCR
SCR
SCR
SCR
SCR
4
4
4
4
4
600
15
30
100
200
2N5574
2N5754
2N5755
2N5756
2N5757
458
414
414
414
414
85
28
28
28
28
Triac
Triac
Triac
Triac
Triac
15
2.5
2.5
2.5
2.5
400
100
200
400
600
S2062C
S20620
S2062E
S2062F
S2062M
108C
1080
108E
108F
108M
654
654
654
654
654
138
138
138
138
138
SCR
SCR
SCR
SCR
SCR
4
4
4
4
4
300
400
500
50
600
01201A
012018
012010
01201F
01201M
44002
44003
44004
44001
44005
495
495
495
495
495
271
271
271
277
277
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
1
1
1
1
1
100
200
400
50
600
S20620
S2062Y
S2400A
S24008
S24000
1080
108Y
40942
40493
40944
654
654
567
567
567
138
138
151
151
151
SCR
SCR
SCR
SCR
SCR
4
4
4.5
4.5
4.5
15
30
100
200
400
01201N
01201P
02101S
02103S
02103SF
44006
44007
40892
40891
40890
495
495
522
522
522
271
271
298
298
298
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
1
1
1
3
3
800
1000
700
700
750
S2400M
S26008
S26000
S2600M
S26108
40945
40654
40655
40833
40658
567
496
496
496
496
151
156
156
156
156
SCR
SCR
SCR
SCR
SCR
4.5
7
7
7
3.3
600
200
400
600
200
02201 A
022018
022010
02201F
02201M
44934
44935
44936
44933
44937
629
629
629
629
629
313
313
313
313
313
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
1
1
1
1
1
100
200
400
50
600
S26100
S2610M
S26208
S26200
S2620M
40659
40835
40656
40657
40834
496
496
496
496
496
156
156
156
156
156
SCR
SCR
SCR
SCR
SCR
3.3
3.3
7
7
7
400
600
200
400
600
02201N
02406A
024068
02406C
024060
44938
43880
43881
43882
43883
629
663
663
663
663
313
318
318
318
318
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
1
6
6
6
6
800
100
200
300
400
S27108
S27100
S2710M
S2800A
S28008
40504
40505
40506
40867
40868
266
266
266
501
501
164
164
164
166
166
SCR
SCR
SCR
SCR
SCR
1.7
1.7
1.7
8
8
200
400
600
100
200
02406F
02406M
02412A
024128
02412C
43879
43884
43890
43891
43892
663
663
884
664
664
318
318
326
326
326
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
6
6
12
12
12
50
600
100
200
300
S28000
S37008
S37000
S3700M
S3701M
40869
40553
40554
40555
40768
501
306
306
306
476
166
172
172
172
192
SCR
SCR
SCR
SCR
SCR
8
5
5
5
5
400
200
400
600
600
024120
02412F
02412M
02520A
025208
43893
43889
43894
43900
43901
884
664
664
665
665
326
326
326
334
334
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
12
12
12
20
20
400
50
600
100
200
S3702SF
S3703SF
S3704A
S37048
S37040
40889
40888
522
522
690
690
690
194
194
180
180
180
SCR
SCR
SCR
SCR
SCR
5
5
5
5
5
750
750
100
200
400
02520C
025200
02520F
02520M
02540A
43902
43903
43899
43904
40957
665
665
665
665
580
334
334
334
334
345
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
20
20
20
20
40
300
400
50
600
100
S3704M
S3704S
S3705M
S3706M
S3714A
690
690
354
354
690
180
180
187
187
180
SCR
SCR
SCR
SCR
SCR
5
5
5
5
5
600
700
600
600
100
025408
025400
02540F
02540M
02600EF
40958
40959
40956
40960
40644
580
580
580
580
354
345
345
345
345
303
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
40
40
40
40
1
200
400
50
600
550
S37148
S37140
S3714M
S3714S
S38000
41023
690
690
690
690
639
180
180
180
180
199
SCR
SCR
SCR
SCR
ITR*
5
5
5
5
5
200
400
600
700
400
02601A
026018
026010
026010F
TA7892
TA7893
40643
723
723
723
354
308
308
308
303
Rectifier
Rectifier
Rectifier
Rectifier
1
1
1
1
100
200
400
450
02601EF
02601F
02601M
02601N
03202U
03202Y
303
308
308
308
350
350
Rectifier
Rectifier
Rectifier
Rectifier
Diac
Diac
1
1
1
1
2 pk
2 pk
550
50
600
800
25-40
2935
41019
41022
41021
41018
41020
639
639
639
639
639
199
199
199
199
199
ITR*
ITR*
ITR*
ITR*
ITR*
5
5
5
5
5
500
550
600
650
700
TA7894
TA7895
45412
45411
354
723
723
723
577
577
S3800E
S3800EF
S3800M
S3800MF
S3800S
S3800SF
S6200A
S62008
S62000
S6200M
41017
40749
40750
40751
40752
639
418
418
418
418
199
210
210
210
210
ITR*
SCR
SCR
SCR
SCR
5
20
20
20
20
750
100
200
400
600
S2060A
S20608
S2060C
S20600
S2060E
106A
1068
106C
1060
106E
654
654
654
654
654
138
138
138
138
138
SCR
SCR
SCR
SCR
SCR
4
4
4
4
4
100
200
300
400
500
S6210A
S62108
S62100
S6210M
S6220A
40753
40754
40755
40756
40757
418
418
418
418
418
210
210
210
210
210
SCR
SCR
SCR
SCR
SCR
20
20
20
20
20
100
200
400
600
100
S2060F
S2060M
S20600
S2060Y
S2061A
106F
106M
1060
106Y
107A
654
654
654
654
654
138
138
138
138
138
SCR
SCR
SCR
SCR
SCR
4
4
4
4
4
50
600
15
30
100
S62208
S62200
S6220M
S0400N
S6410N
40758
40759
40760
40937
40938
418
418
418
578
578
210
210
210
218
218
SCR
SCR
SCR
SCR
SCR
20
20
20
35
35
200
400
600
800
800
S20618
S2061C
S20610
S2061E
S2061F
1078
107C
1070
107E
107F
654
654
654
654
654
138
138
138
138
138
SCR
SCR
SCR
SCR
SCR
4
4
4
4
4
200
300
400
500
50
S6420A
S64208
S64200
S6420M
S6420N
40680
40681
40682
40683
40952
578
578
578
578
578
218
218
218
218
218
SCR
SCR
SCR
SCR
SCR
35
35
35
35
35
100
200
400
600
800
"Applies
40642
to RCA 100,4000.41000,43000,44000,
and 45000, Series numbers.
40640
40641
-Integrated
thyristor
and rectifier.
S6431M
S7430M
S7432M
T2300A
T2300B
4U,lb
40735
LA!
LZl:S
'IUb
'II
I f1ac
40525
40526
35
2.5
2.5
600
600
100
200
T4117B
T4117D
T4120B
T4120D
40719
40720
40802
40803
406
406
458
458
47
47
85
85
Triac
Triac
Triac
Triac
'"
'IUU
238
245
33
33
::;CH
SCR
SCR
Triac
Triac
tU/IQ
408
724
470
470
10
10
15
15
200
400
200
400
T2300D
T2301A
T2301B
T2301D
T2302A
40527
40766
40691
40692
40528
470
431
431
431
470
33
40
40
40
33
Triac
Triac
Triac
Triac
Triac
2.5
2.5
2.5
2.5
2.5
400
100
200
400
100
T4120M
T4121B
T4121D
T4121M
T4706B
40804
40799
40800
40801
40715
458
457
457
457
406
85
92
92
92
47
Triac
Triac
Triac
Triac
Triac
15
10
10
10
15
600
200
400
600
200
T2302B
T2302D
T2304B
T2304D
T2305B
40529
40530
40769
40770
40771
470
470
441
441
441
33
33
41
41
41
Triac
Triac
Triac
Triac
Triac
2.5
2.5
0.5
0.5
0.5
200
400
200
400
200
T4706D
T6400N
T6401B
T6401D
T6401M
40716
40925
40660
40661
40671
406
593
459
459
459
47
55
107
107
107
Triac
Triac
Triac
Triac
Triac
15
40
30
30
30
400
800
200
400
600
T2305D
T2306A
T2306B
T2306D
T2310A
40772
40696
40697
40698
40531
441
406
406
406
470
41
47
47
47
33
Triac
Triac
Triac
Triac
Triac
0.5
2.5
2.5
2.5
1.6
400
100
200
400
470
T6404B
T6404D
T6405B
T6405D
T6406B
40791
40792
407B7
40788
40699
487
487
487
487
406
114
114
114
114
47
Triac
Triac
Triac
Triac
Triac
40
40
25
25
40
200
400
200
400
200
T2310B
T2310D
T2311A
T2311B
T2311D
40532
40533
40767
40761
40762
470
470
431
431
431
33
33
40
40
40
Triac
Triac
Triac
Triac
Triac
200
400
100
200
400
T6406D
T6406M
T6407B
T6407D
T6407M
40700
40701
40705
40706
40709
406
406
406
406
406
47
47
47
47
47
Triac
Triac
Triac
Triac
Triac
40
40
30
30
30
400
600
200
400
600
T2312A
T2312B
T2312D
T2313A
T2313B
40534
40535
40536
40684
40685
470
470
470
414
414
33
33
33
2B
2B
Triac
Triac
Triac
Triac
Triac
1.6
1.6
1.6
1.6
1.6
1.9
1.9
1.9
1.9
1.9
100
200
400
100
200
T6410N
T6411B
T6411D
T6411M
T6414B
40926
40662
40663
40672
40793
593
459
459
459
487
55
107
107
107
114
Triac
Triac
Triac
Triac
Triac
40
30
30
30
40
800
200
400
600
200
T2313D
T2313M
T2316A
T2316B
T2316D
40686
40687
40693
40694
40695
414
414
406
406
406
28
28
47
47
47
Triac
Triac
Triac
Triac
Triac
1.9
1.9
2.5
2.5
2.5
400
600
100
200
400
T6414D
T6415B
T6415D
T6416B
T6416D
40794
40789
40790
40702
40703
487
487
487
406
406
114
114
114
47
47
Triac
Triac
Triac
Triac
Triac
40
25
25
40
40
400
200
400
200
400
T2500B
T2500D
T2700B
T2700D
T2706B
41014
41015
40429
40430
40727
615
615
351
351
406
49
49
62
62
47
Triac
Triac
Triac
Triac
Triac
6
6
6
6
6
200
400
200
400
200
T6416M
T6417B
T6417D
T6417M
T6420B
40704
40707
40708
40710
40688
406
406
406
406
593
47
47
47
47
55
Triac
Triac
Triac
Triac
Triac
40
30
30
30
40
600
200
400
600
200
T2706D
T2710B
T2710D
T2716B
T2716D
40728
40502
40503
40729
40730
406
351
351
406
406
47
62
62
47
47
Triac
Triac
Triac
Triac
Triac
6
3.3
3.3
3.3
3.3
400
200
400
200
400
T6420D
T6420M
T6420N
T6421B
T6421D
40689
40690
40927
40805
40806
593
593
593
459
459
55
55
55
107
107
Triac
Triac
Triac
Triac
Triac
40
40
40
30
30
400
600
800
200
400
T2800B
T2800D
T2800M
T2801DF
T2806B
40668
40669
40670
40842
40721
364
364
364
493
406
69
69
69
75
47
Triac
Triac
Triac
Triac
Triac
8
8
8
6
8
200
400
600
450
200
T6421M
T8401B
T8401D
T8401M
T8411B
40807
41029
41030
41031
41032
459
725
725
725
725
107
122
122
122
122
Triac
Triac
Triac
Triac
Triac
30
60
60
60
60
600
200
400
600
200
T2806D
T2850A
T2850B
T2850D
T4100M
40722
40900
40901
40902
40797
406
540
540
540
458
47
79
79
79
85
Triac
Triac
Triac
Triac
Triac
8
8
8
8
15
400
100
200
400
600
T8411D
T8411M
T8421B
T8421D
T8421M
41033
41034
41035
41036
41037
725
725
725
725
725
122
122
122
122
122
Triac
Triac
Triac
Triac
Triac
60
60
60
60
60
400
600
200
400
600
T4101M
T4103B
T4103D
T4104B
T4104D
40795
40783
40784
40779
40780
457
443
443
443
443
92
99
99
99
99
Triac
Triac
Triac
Triac
Triac
10
15
15
10
10
600
200
400
200
400
T8430B
T8430D
T8430M
T8440B
T8440D
40916
40917
40918
40919
40920
549
549
549
549
549
130
130
130
130
130
Triac
Triac
Triac
Triac
Triac
80
80
80
80
80
200
400
600
200
400
T4105B
T4105D
T4106B
T4106D
T4107B
40775
40776
40711
40712
40717
443
443
406
406
406
99
99
47
47
47
Triac
Triac
Triac
Triac
Triac
6
6
15
15
10
200
400
200
400
200
T8440M
T8450B
T8450D
T8450M
40921
40922
40923
40924
549
549
549
549
130
130
130
130
Triac
Triac
Triac
Triac
80
80
80
80
600
200
400
600
T4107D
T4110M
T4111M
T4113B
T4113D
40718
40798
40796
40785
40786
406
458
457
443
443
47
85
92
99
99
Triac
Triac
Triac
Triac
Triac
10
15
10
15
15
400
600
600
200
400
T4114B
T4114D
T4115B
T4115D
T4116B
40781
40782
40777
40778
40713
443
443
443
443
406
99
99
99
99
47
Triac
Triac
Triac
Triac
Triac
10
10
6
6
15
200
400
200
400
200
Applies
""
35
jq.t
bUU
to RCA 100, 40000, 41000, 43000, 44000, and 45000 Series numbers.
10
IOU
RCA Thyristors/Rectifiers
Type-Number
Cross-Reference Guide
(Old numbers to NEW numbers)
RCA106A
RCA106B
RCA106C
RCA1060
RCA106E
NEW
Data Sheet Page Type of Current Voltage
RCA
(V)
(A)
FileNo. No. Device
Type No.
S2060A
654
138 SCR
4
100
S2060B
654
138 SCR
4
200
S2060C
654
138 SCR
4
300
654
138 SCR
4
400
S20600
S2060E
654
138 SCR
4
500
40680
40681
40682
40683
40684
NEW
Data Sheet Page
RCA
File No.
No.
Type No.
S6420A
578
218
S6420B
578
218
578
218
S64200
S6420M
578
218
T2313A
414
28
RCA106F
RCA1060
RCA106M
RCA106Y
RCA107A
S2060F
S20600
S2060M
S2060Y
S2061A
654
654
654
654
654
138
138
138
138
138
SCR
SCR
SCR
SCR
SCR
4
4
4
4
4
50
15
600
30
100
40685
40686
40687
40688
40689
T2313B
T23130
T2313M
T6420B
T64200
414
414
414
593
593
28
28
28
55
55
RCA107B
RCA107C
RCA1070
RCA107E
RCA107F
S2061B
S2061C
S2061 0
S2061E
S2061F
654
654
654
654
654
138
138
138
138
138
SCR
SCR
SCR
SCR
SCR
4
4
4
4
4
200
300
400
500
50
40690
40691
40692
40693
40694
T6420M
T2301B
T23010
T2316A
T2316B
593
431
431
406
406
RCA1070
RCA107M
RCA 107Y
RCA108A
RCA 108B
S20610
S2061M
S2061Y
S2062A
S2062B
654
654
654
654
654
138
138
138
138
138
SCR
SCR
SCR
SCR
SCR
4
4
4
4
4
15
600
30
100
200
40695
40696
40697
40698
40699
T23160
T2306A
T2306B
T23060
T6406B
RCA108C
RCA1080
RCA108E
RCA108F
RCA1080
S2062C
S20620
S2062E
S2062F
S20620
654
654
654
654
654
138
138
138
138
138
SCR
SCR
SCR
SCR
SCR
4
4
4
4
4
300
400
500
50
15
40700
40701
40702
40703
40704
RCA108M
RCA108Y
40216
40429
40430
S2062M
S2062Y
S6431M
T2700B
T27000
654
654
247
351
351
138
138
228
62
62
SCR
SCR
SCR
4
4
35
6
6
600
30
600
200
400
40502
40503
40504
40505
40506
T2710B
T27100
S2710B
S27100
S2710M
62
62
164
164
164
Triac
Triac
SCR
SCR
SCR
3.3
3.3
1.7
1.7
1.7
40525
40526
40527
40528
40529
T2300A
T2300B
T23000
T2302A
T2302B
351
351
266
266
266
470
470
470
470
470
33
33
33
33
33
Triac
Triac
Triac
Triac
Triac
2.5
2.5
2.5
2.5
2.5
40530
40531
40532
40533
40534
T23020
T2310A
T2310B
T23100
T2312A
470
470
470
470
470
33
33
33
33
33
Triac
Triac
Triac
Triac
Triac
40535
40536
40553
40554
40555
T2312B
T23120
S3700B
S37000
S3700M
470
470
306
306
306
33
33
172
172
172
Triac
Triac
40640
40641
40642
40643
40644
S3705M
S3706M
02601 EF
026010F
02600EF
354
354
354
354
354
187
187
303
303
303
SCR
SCR
40654
40655
40656
40657
40658
S2600B
S26000
S2620B
S26200
S2610B
496
496
496
496
496
156
156
156
156
156
40659
40660
40661
40662
40663
S26100
T6401B
T6401D
T6411B
T6411D
496
459
459
459
459
156
107
107
107
107
Triac
Triac
Triac
40668
40669
40670
40671
40672
T2800B
T28oo0
T2800M
T6401M
T6411M
364
364
364
459
459
69
69
69
107
107
Former RCA
Type No.
Former RCA
Type No.
Type of Current Voltage

(V)
Device
(AI
Triac
35
35
35
35
1.9
100
200
400
600
100
Triac
Triac
Triac
Triac
Triac
1.9
1.9
1.9
40
40
200
400
600
200
400
55
40
40
47
47
Triac
Triac
Triac
Triac
Triac
40
2.5
2.5
2.5
2.5
600
200
400
100
200
406
406
406
406
406
47
47
47
47
47
Triac
Triac
Triac
Triac
Triac
2.5
2.5
2.5
2.5
40
400
100
200
400
200
T64060
T6406M
T6416B
T64160
T6416M
406
406
406
406
406
47
47
47
47
47
Triac
Triac
Triac
Triac
Triac
40
40
40
40
40
400
600
200
400
600
40705
40706
40707
40708
40709
T6407B
T64070
T6417B
T64170
T6407M
406
406
406
406
406
47
47
47
47
47
Triac
Triac
Triac
Triac
Triac
30
30
30
30
30
200
400
200
400
600
200
400
200
400
600
100
200
400
100
200
40710
40711
40712
40713
40714
T6417M
T4106B
T41060
T4116B
T41160
406
406
406
406
406
47
47
47
47
47
Triac
Triac
Triac
Triac
Triac
30
15
15
15
15
600
200
400
200
400
40715
40716
40717
40718
40719
T4706B
T47060
T4107B
T41070
T4117B
406
406
406
406
406
47
47
47
47
47
Triac
Triac
Triac
Triac
Triac
15
15
10
10
10
200
400
200
400
200
2.5
1.6
1.6
1.6
1.9
1.9
1.9
5
5
5
400
100
200
400
100
40720
40721
40722
40727
40728
T41170
T2806B
T28060
T2706B
T27060
406
406
406
406
406
47
47
47
47
47
Triac
Triac
Triac
Triac
Triac
10
8
8
6
6
400
200
400
200
400
200
400
200
400
600
40729
40730
40735
40749
40750
T2716B
T27160
S7430M
S6200A
S6200B
406
406
408
418
418
47
47
238
210
210
Triac
Triac
SCR
SCR
SCR
3.3
3.3
35
20
20
200
400
600
100
200
5
5
1
1
1
600
600
550
450
550
40751
40752
40753
40754
40755
S62000
S6200M
S6210A
S6210B
S62100
418
418
418
418
418
210
210
210
210
210
SCR
SCR
SCR
SCR
SCR
20
20
20
20
20
400
600
100
200
400
SCR
SCR
SCR
SCR
SCR
7
7
7
7
3.3
200
400
200
400
200
40756
40757
40758
40759
40760
S6210M
S6220A
S6220B
S62200
S6220M
418
418
418
418
418
210
210
210
210
210
SCR
SCR
SCR
SCR
SCR
20
20
20
20
20
600
100
200
400
600
SCR
Triac
3.3
30
30
30
30
400
200
400
200
400
40761
40762
40766
40767
40768
T2311B
T23110
T2301A
T2311A
S3701M
431
431
431
431
476
40
40
40
40
192
Triac
Triac
Triac
SCR
1.6
1.6
2.5
1.6
5
200
400
100
100
600
8
8
8
30
30
200
400
600
600
600
40769
40770
40771
40772
40775
T2304B
T23040
T2305B
T23050
T4105B
441
441
441
441
443
41
41
41
41
99
Triac
Triac
Triac
Triac
Triac
0.5
0.5
0.5
0.5
6
200
400
200
400
200
Triac
Triac
SCR
SCR
SCR
Rectifier
Rectifier
Rectifier
Triac
Triac
Triac
Triac
Triac
"
SCR
SCR
SCR
SCR
Triac
RCA Thyristors/Rectifiers
Type-Number
Cross-Reference Guide [cont'd]
(Old numbers to NEW numbers)

Former RCA
Type No.
NEW
Data Sheet Page Type of Current Voltage
RCA
(A)
(VI
FileNo. No. Device
Type No.
40776
40777
40778
40779
40780
T41050
T4115B
T41150
T4104B
T41040
443
443
443
443
443
99
99
99
99
99
Triac
Triac
Triac
Triac
Triac
6
6
6
10
10
400
200
400
200
400
40960
41014
41015
41017
41018
NEW
Data Sheet Page Type of CurrentVoltage
RCA
(AI
(VI
FileNo. No. Device
Type No.
600
40
345 Rectifier
02540M
580
200
49 Triac
6
615
T2500B
400
49 Triac
6
615
T25000
750
5
199 ITR*
538005F
639
650
5
199 ITR*
53800MF
639
40781
40782
40783
40784
40785
T4114B
T41140
T4103B
T41030
T4113B
443
443
443
443
443
99
99
99
99
99
Triac
Triac
Triac
Triac
Triac
10
10
15
15
15
200
400
200
400
200
41019
41020
41021
41022
41023
53800E
538005
53800M
53800EF
538000
639
639
639
639
639
199
199
199
199
199
ITR*
ITR*
ITR*
ITR*
ITR*
40786
40787
40788
40789
40790
T41130
T6405B
T64050
T6415B
T64150
443
487
487
487
487
99
114
114
114
114
Triac
Triac
Triac
Triac
Triac
15
25
25
25
25
400
200
400
200
400
41029
41030
41031
41032
41033
T8401B
T84010
T8401M
T8411B
T84110
725
725
725
725
725
122
122
122
122
122
40791
40792
40793
40794
40795
T6404B
T64040
T6414B
T64140
T4101M
487
487
487
487
457
114
114
114
114
92
Triac
Triac
Triac
Triac
Triac
40
40
40
40
10
200
400
200
400
600
41034
41035
41036
41037
43879
T8411M
T8421B
T8421 0
T8421M
02406F
725
725
725
725
663
40796
40797
40798
40799
40800
T4111M
T4100M
T4110M
T4121B
T41210
457
458
458
457
457
92
85
85
92
92
Triac
Triac
Triac
Triac
Triac
10
15
15
10
10
600
600
600
200
400
43880
43881
43882
43883
43884
02406A
02406B
02406C
024060
02406M
40801
40802
40803
40804
40805
T4121M
T4120B
T41200
T4120M
T6421B
457
458
458
458
459
92
85
85
85
107
Triac
Triac
Triac
Triac
Triac
10
15
15
15
30
600
200
400
600
200
43889
43890
43891
43892
43893
40806
40807
40833
40834
40835
T6421 0
T6421M
52600M
52620M
52610M
459
459
496
496
496
107
107
156
156
156
Triac
Triac
30
30
7
7
3.3
400
600
600
600
600
40842
40867
40868
40869
40888
T28010F
52800A
52800B
528000
537035F
493
501
501
501
522
75
166
166
166
194
Triac
6
8
8
8
5
40889
40890
40891
40892
40900
537025F
021035F
021035
021015
T2850A
522
522
522
522
540
194
298
298
298
79
5CR
Rectifier
Rectifier
Rectifier
Triac
40901
40902
40916
40917
40918
T2850B
T28500
T8430B
T84300
T8430M
540
540
549
549
549
79
79
130
130
130
40919
40920
40921
40922
40923
T8440B
T84400
T8440M
T8450B
T84500
549
549
549
549
549
40924
40925
40926
40927
40937
T8450M
T6400N
T6410N
T6420N
56400N
40938
40942
40943
40944
40945
40952
40956
40957
40958
40959
Former RCA
Type No.
5
5
5
5
5
500
700
600
550
400
Triac
Triac
Triac
Triac
Triac
60
60
60
60
60
200
400
600
200
400
122
122
122
122
318
Triac
Triac
Triac
Triac
Rectifier
60
60
60
60
6
600
200
400
600
50
663
663
663
663
663
318
318
318
318
318
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
6
6
6
6
6
100
200
300
400
600
02412F
02412A
02412B
02412C
024120
664
664
664
664
664
326
326
326
326
326
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
12
12
12
12
12
50
100
200
300
400
43894
43899
43900
43901
43902
02412M
02520F
02520A
02520B
02520C
664
665
665
665
665
326
334
334
334
334
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
12
20
20
20
20
600
50
100
200
300
450
100
200
400
750
43903
43904
44001
44002
44003
025200
02520M
01201F
01201A
01201B
665
665
495
495
495
334
334
278
278
278
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
20
20
1
1
1
400
600
50
100
200
5
3
3
1
8
750
750
700
700
100
44004
44005
44006
44007
44933
012010
01201M
01201N
01201P
02201F
495
495
495
495
629
278
278
278
278
313
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
1
1
1
1
1
400
600
800
1000
50
Triac
Triac
Triac
Triac
Triac
8
8
80
80
80
200
400
200
400
600
44934
44935
44936
44937
44938
02201A
02201B
022010
02201M
02201N
629
629
629
629
629
313
313
313
313
313
Rectifier
Rectifier
Rectifier
Rectifier
Rectifier
1
1
1
1
1
100
200
400
600
800
130
130
130
130
130
Triac
Triac
Triac
Triac
Triac
80
80
80
80
80
200
400
600
200
400
549
593
593
593
578
130
55
55
55
218
Triac
Triac
Triac
Triac
600
800
800
800
800
03202Y
03202U
02601B
026010
02601M
02601N
577
577
723
723
723
723
350
350
308
308
308
308
Diac
Diac
Rectifier
Rectifier
Rectifier
Rectifier
5CR
80
40
40
40
35
45411
45412
TA7892
TA7893
TA7894
TA7895
5641ON
52400A
52400B
524000
52400M
578
567
567
567
567
218
151
151
151
151
5CR
5CR
5CR
5CR
5CR
35
4.5
4.5
4.5
4.5
800
100
200
400
600
56420N
02540F
02540A
02540B
025400
578
580
580
580
580
218
345
345
345
345
5CR
35
40
40
40
40
800
50
100
200
400
5CR
5CR
5CR
5CR
5CR
5CR
5CR
Rectifier
Rectifier
Rectifier
Rectifier
.. Integrated
12
thyristor
and rectifier.
2 pk
2 pk
1
1
1
1
29-35
25-40
200
400
600
800
1CE-402
"Operating Considerations for RCA Solid-State Devices"
354
AN-3418
"Design Considerations for the RCA-S6431M Silicon Controlled

Rectifier in High-Current Pulse Applications"
359
AN-3469
"Application of RCA Silicon Controlled

Control of Universal Motors"
364
AN-3551
"Circuit Factor Charts for RCA Thyristor

(SCR's and Triacs)"
Rectifiers to the
Applications
375
AN-3659
"Application
of RCA Silicon Rectifiers to Capacitive Loads"
AN-3697
"Triac Power-Control Applications"
386
AN-3778
"Light
394
AN-3780
"A New Horixontal-Deflection

System Using RCA-S3705M and
S3706M Silicon Controlled Rectifiers"
400
AN-3822
"Thermal Considerations in Mounting of RCA Thyristors"
410
AN-3886
"AC Voltage Regulators Using Thyristors"
416
AN-4124
"Handling and Mounting of RCA Molded-Plastic Transistors

and Thyristors"
422
Dimmers Using Triacs"
AN-4242 . . . . . . . . . . . . "A Review of Thyristor
Characteristics and Appl ications"
Control of Incandescent Traffic-Signal
Lamps"
380
430
AN-4537
"Thyristor
444
AN-4745
"Analysis and Design of Snubber Networks for dv/dt

Suppression in Thyristor Circuits"
451
AN-6054
"Triac Power Controls for Three-Phase Systems"
456
AN-6096
"Solid-State Approaches to Cooking-Range Control"
.462
AN-6141
"Power Switching Using Solid-State Relay"
470
ICAN-6182
"Features and Applications of RCA

Integrated-Circuit Zero-Voltage Switches"
475
ReA
Triacs
Mod. TO-S
With Heat
Radiator
TO-S
IT(AMS)
2.5A
2.5A
2.5A
2.5A
2.5A
2.5A
2.5A
ITSM
25A
25A
25A
25A
25A
25A
25A
25A
100
T230QA
T2301A
T2302A
2N5754
T2313A
T2310A
T2312A
T2311A
200
T2300B
T2301 B
T23028
2N5755
T2313B
T2310B
T23128
T23118
400
T2300D
T2301D
T2302D
2N5756
T2313D
T2310D
T2312D
T23110
2N5757
T2313M
VOROM(Vl
..
..in
~~
~
Modified
a:
450
0
Z
600
2.5A
800
IGT(mAl
1+,111-
10
25
25
10
1-,111+
10
40
40
10
VGT(V)
VOROM(V)
w
"""
~~
2.2
2.2
2.2
2.2
2.2
2.2
2.2
470
431
470
414
414
470
470
431
33
40
33
28
28
33
33
40
100
T2306A
T2316A
200
T2306B
T23168
400
T2306D
T2316D
45
45
600
>~
:li
2.2
File No.
Page No.
450
0_
0'"
All Modes
IGT(mAI
1+,111-
VGT(VI
1+,111+
1.5
1.5
File No.
406
406
47
47
Page No.
a.SA
a.SA
200
T23048
T23058
400
T2304D
T23050
IT RMS)
VOROM(VI
Z
~g
..
tGT(mAl
8~~
1+.1111
.111+
10
25
10
40
VGT(V)
All Modes
2.2
2.2
File No.
441
441
Page No.
41
41
TO66
,"
TO-22DAB
TO66
With
Heat
Radiator
o?
ReA
Triacs
~~ '"
VER$AWATT
6.DA
15.0A
6.0A
6A
6A
B.OA
'T<M
10QA
100A
10QA
60A
100A
100A
200
T2700B
T2710B
T2500B
400
T2700D
T2710D
T2500D
450
..
..
Z
I-
600
'"
800
ISOWATT
8A
100A
10.0A
15.0A
100A
100A
T2B50A
100
a:
.(t~'
,.
IT(RMSI
VDROM(VI
Press Fit
T2800B
T2850B
2N5567
2N5571
T2800D
T2B50D
2N5568
2N5572
T4101M
T4100M
T2801DF
T2800M
IGT(mAl
1+,111-
25
25
25
80
25
25
25
50
1-,111+
40
40
60
60
60
40
80
All Modes
2.2
2.2
2.5
4.0
2.5
2.5
2.5
2.5
File No.
351
351
615
493
364
540
457
458
Page No.
62
62
49
75
62
79
92
85
VGT(VI
VOROMIV)
"..':;:1:
100
200
T2706B
T4706B
T2716B
T2806B
T4107B
T4100B
400
T2706D
T47060
T27160
T2806D
T41070
T41060
1+,111-
45
45
45
45
45
45
1+,111+
1.5
1.5
1.5
1.5
1.5
1.5
File No.
406
406
406
406
406
406
Page No.
47
47
47
69
450
CU
>~
o~
ffiN
600
'GT(mAI
VGT(VI
69
69
6A
10.A
15.0A
200
T4105B
T4104B
T4103B
400
T41050
T4104D
T41030
IT(RMSI
VOROM(VI
z
0
~S
" ..
IGT(mAI
Ow
1+,111-
50
50
50
1 , 111+
80
80
80
VGT(VI
All Modes
2.5
2.5
2.5
File No.
443
443
443
99
99
99
Page No.
Stud
Stud
Press Fit
__ v
0:)
-;;
ReA
Triacs
,
Isolated
Stud
'TIRMSI
10.0A
15.0A
10.0A
15.0A
30.0A
40.0A
30.0A
40.0A
ITSM
looA
looA
lOOA
looA
300A
300A
300A
300A
200
400
450
2N5569
2N5573
T4121B
T4120B
T6401B
2N5441
T64118
2N5444
2N5570
2N5574
T4121D
T4120D
T64010
2N5442
T64110
2N5445
600
800
T4111M
T4110M
T4121M
T4120M
T6401M
2N5443
T6411M
1+,111-
25
40
50
80
25
40
50
80
50
80
50
80
50
80
50
80
2.5
457
2.5
458
2.5
457
2.5
File No.
458
Page No.
92
85
92
85
2.5
459
107
2.5
593
55
2.5
459
107
2.5
593
55
VOROM(V)
a:
"
.."
'"
~.
C
Z
100
T6400N
2N5446
T6410N
IGT(mA)
1-;111
VGTIV)
All Modes
VOROMIV)
100
w
""~:r
OU
>!:
o~
ffi
200
T4117B
T4116B
T64078
T6406B
T6417B
T64168
400
450
600
T4117D
T41160
T6407D
T64060
T6417D
T64160
T6407M
T6406M
T6417M
T6416M
1+.111-
45
45
45
45
45
45
1+.111+
1.5
406
IGT(mA)
VGTIV)
File No.
69
Page No.
6A
'TIRMSI
VOROMIV)
Z
0
~i=
8:
.. ~
1.5
1.5
1.5
1.5
1.5
406
69
406
47
406
47
406
47
406
47
10.0A
15.0A
25.0A
40.0A
25.0A
40.0A
200
400
T41158
T4114B
T41138
T64058
T64048
T64158
T6414B
T41150
T41140
T41130
T64050
T64040
T64150
T64140
1+.111-
50
80
50
80
50
80
80
'20
80
120
80
120
80
120
2.5
443
99
2.5
443
99
2.5
443
3.0
487
114
3.0
487
114
3.0
487
114
3.0
487
114
IGT(mA)
1-.111+
VGTIV)
All Modes
File No.
Page No.
99
Isolated
Stud
Press
Fit
,--...
ReA
"
Stud
l, l-l
K, K-1
.
1
I,
'9
Triacs
IT(AMSI
30.0A
40.0A
60A
80A
60A
80A
300A
300A
600A
850A
60A
600A
80A
lTSM
850A
600A
850A
T64218
T6420B
T84018
T84308
T84118
T84408
T84218
T84508
T6421 0
T64200
T8401D
T84300
T84110
T84400
T8421 0
T84500
T6421M
T6420M
T6420N
T8401M
T8430M
T8411M
T8440M
T8421M
T8450M
50
80
50
75
75
75
75
80
'50
'50
'50
'50
75
150
75
150
File No.
2.5
459
2.8
725
2.5
549
2.8
725
'07
2.8
725
122
2.5
549
Page No.
2.5
593
55
'30
'22
'30
'22
2.5
549
130
VOAOMIV)
100
200
400
"''"
450
C
Z
600
'"
>-
800
'"
IGT(mAl
1+,111-
.111+
VGTIVI
All Mod"
VOAOMIVI
100
200
400
450
">-'"
... :z:
0
>>-
600
o~
"''''
w
IGT(mA)
1+,111VGT(V)
1+,111+
File No.
Page No.
ITIAMS)
VOAOM(VI
~~
8~
..~
200
400
IGT(mA)
1+,1111,111+
0
VGT(V)
All Modes
File No.
Page No.
"0.
Stud
M,
M'
TO-8
TO-66
.. o-
]\
RCA
SCR's
IT{AM5)
2.0A
4.5A
5.0A
FTO
5.0A
FTO
5.0A
FTO
5A
FTO
5.0A
FTO
5.0A
FTO
5.0A
IT5M
60A
200A
60A
80A
80A
80A
75A(lPMI
50A
50A
VOROM
VRROMIVI
15
25
30
50
52400A
'00
53704A
150
200
2N3528
524008
2N3228
537008
537048
2N3529
524000
2N3525
537000
537040
2N4102
52400M
2N4101
53700M
53704M
250
300
400
500
600
m~~
700
53701M
537045
537025
750
537035F
800
IGT(mAI
15
15
15
30
40
40
35
45
40
VGT(V)
3.5
3.5
114
144
567
151
114
354
187
306
172
690
476
192
522
522
194
File No.
Page No.
'44
180
'94
TG-66 With
.at Rad.
RCA
SCR'S
Low Profile
Mod. TG-S
To-5
With Heat
R
To-5
With
Heat
Spreader
TG-220AB
m d,
~~
'"
~~
VERSAWATT
5.0A
tTIRMSI
60A
IT5M
VOROM
'5
VRROMIV)
25
FTO
SA
7.0A
3.3A
7.0A
4.OA
4.OA
4A
B.oA
80A
looA
,00A
,00A
35A
35A
35A
looA
520600
520610
520620
30
5206QY
52061Y
52062Y
50
52060F
52061F
52062F
52060A
52061 A
52062A
52BooA
527108
S37148
526008
526108
526208
520608
520618
520628
528008
5206QC
52061C
52062C
527100
537140
526000
526100
526200
520600
520610
520620
52060E
S2061E
S2062E
S2710M
53714M
S2600M
S2610M
52620M
S2060M
S2061M
52062M
100
53714A
150
200
250
300
400
500
600
528000
S3714S
700
750
800
IGT(mAl
'5
40
15
15
'5
0.2
0.5
'5
3.5
1.5
1.5
1.5
0.8
0.8
0.8
'.5
File No.
266
690
496
496
496
654
654
654
50'
Page No.
164
180
156
156
'56
138
138
'38
'66
VGT(Vl
TO-3
Press
W:<II
\.
12.5A
20.0A
35.0A
20.0A
35.0A
200A
200A
350A
200A
350A
100
150
2N3668
S6200A
2N3870
S6210A
2N3896
200
250
2N3669
862008
2N3871
562108
2N3897
2N3670
862000
2N3872
862100
2N3898
2N4103
86200M
2N3873
86210M
2N3899
40
2
116
203
15
40
2
418
210
2
578
218
'5
2
418
210
40
2
578
218
ITSM
VRROM(VI
~'J
'DiJ
=:
IT(RM5l
VOROM
Stud
,.
p
RCA
SCR's
Fit
15
25
30
50
300
400
500
600
700
750
800
IGT(mA)
VGT(V)
File No.
Page No.
86400N
S641QN
TD-48
Isolated
Stud
~.
oW
RCA
SCR's
'T(RM51
20.0A
35.0A
1G.OA
25.0A
Pul.
FTO
Mod.
35.0A
FTO
35A
180A
2SOA
2N3650
2N3655
2N3651
2N3656
35.0A
200A
'TSM
VOROM
VRROM(V)
3SOA
'5
25
30
SO
100
'50
200
250
300
400
500
600
S6220A
56220B
562200
56420A
56420B
564200
150A
2N1842A
2N681
2N1843A
2N682
2N1844A
2N683
2N1845A
2N684
2N1846A
2N685
2N1847A
2N6B6
2N164BA
2N6B7
2N3652
2N3657
2N1849A
2N688
2N689
2N3653
2N3658
S7430M
S7432M
2N1850A
56220M
1SOA
125A
2N3654
2N690
S6431M
45
25
80
180
,BO
3.5
28
234
3
96
225
2
247
228
3
408
3
724
245
S6420M
700
750
BOO
IGT(mA)
S6420N
'5
2
VGTIVI
File No.
Page No.
4'B
2'0
40
2
578
2'8
23B
00.1
RCA
Rectifiers
15A
IFSM
VRRM(VI
50
100
200
300
400
O.75A
'0
00.26
I
I
0.75A
15A
lN536
lA
35A
lA
0.75A
lN3253
lN5211
lN5215
lN3194
lN3254
lN5212
lN5216
lN3195
lN3255
lN3256
lN3563
lN5213
lN5217
'N3196
lN5214
lN5218
4'
294
41
294
245
270
245
270
lN1763A
lN2881A
lN2B62A
500
tN444B
lN1764A
lN2883A
600
tN445B
lNl095
lN547
lN2964A
800
1000
5
252
3
255
89
258
50A
lN3193
lN540
Page No.
50A
lN2860A
lN4438
File No.
35A
91
265
RCA
Rectifiers
VRRMIVI
--
lA
30A
'0
IFSM
50
100
200
300
400
500
600
800
1000
D().lS
Plastic
(Plastic)
1.5A
D120tF
50A
lN5391
D1201A
lN5392
012018
'N5393
lN5394
lN5395
012010
D1201M
01201N
lN5396
lN5397
lN5398
1A
Insulated
35A
lN537
lN538
"lN539
lN441B
lA
35A
lN2858A
lN2859A
,UA41B
tN440B
O.75A
Insulated
00-5
00-4
6A
150A
lNl341B
lNl342B
12A
240A
lN1199A
lNl200A
lN13448
lNI202A
tNl203A
lNl204A
tNl345B
lNl3488
lNl3478
lNl3488
D1201P
lN5399
File No.
495
478
58
Page No.
277
273
281
20A
350A
lN248C
lN249C
lN250C
tN1196A
40A
800A
tNt183A
lN1184A
lN1186A
tNtlS7A
lN1196A
lN1197A
lN1188A
tN1205A
lNl206A
tN1198A
lNlt90A
20
283
6
287
38
291
lN1189A
,
I
RCA
Rectifiers
~
00-26
Plastic
t
OO-S
00-4
'0
lA
lA
6A
6A
12A
12A
20A
20A
30A
IFSM
3SA
SOA
7SA
125A
150A
25QA
225A
30M
300A
700A
02601 F
02201 F
lN3879
D2406F
D2412F
lN3899
D2520F
lN3909
D2540F
D2412A
.'IN3900
D2520A
lN391Q
02S40A
024128
lN3901
025208
lN3911
025408
VRRMIV)
40A
100
02601 A
02201 A
lN3880
D2406A
lN3889
lN3890
200
026018
02201 B
lN3881
lN3882
024068
lN3891
02406C
lN3892
D2412C
1N3902
D2520C
lN3912
026010
022010
lN3BS3
024060
lN3893
024120
lN3903
025200
lN39'3
50
300
400
025400
500
D2406M
02520M
D2412M
D2540M
600
D2601M
D2201M
800
D2601N
D2201N
Typ.
200 ns.
200 ns.
200 ns.
200 ns.
200 ns.
Max.
500 ns.
SOD ns.
200 ns.
350 ns.
200 ns.
350 ns.
200 ns.
350 ns.
200
File No.
723
629
726
663
727
664
728
66S
729
580
Page No.
308
313
323
318
331
326
339
334
342
345
1000
Reverse
Recovery
Timetrr
I
RCA
Rectifiers
'0
~
0026
IA
IFSM
70A
Trace
02601
Commutallng
00-1
IA
lA
lOA
20A
EF
02601 OF
linearity
70A
00-15
!Plastlcl
lA
30A
50A
D2103SF
D12Q1M
021035
02201M
D2600EF
02201
Regulator
02201 B
Clamp
021015
File No.
354
354
354
522
522
629
Page No.
303
303
303
298
298
313
200 ns.
ns.
350 ns.
,
I
RCA
Diacs
'ok
D3202Y
03202U
2A
2A
00-15
(Plastic)
29 min. 35 max. V
25 min. 40 max.
+3 max. V
+3 max. V
File No.
9 min.
517
9 min.
517
Page No.
350
VISO'
H-VISOII- l-vlBOII
IC>V
350
RCA
ITR's*
.....
--"-
...
TO-56
IT(AMS)
TRACE
RETRACE
'TSM
5A
50A
5A
50A
538000
VOROM(V)
400
500
550
600
650
700
750
IGT(mA)
VGT(V)
File No.
Page No.
S3800E
S3800EF
S3800M
S3800MF
538005
S3800SF
40
4
45
4
639
199
639
199
Appl ication Information

Triacs
LOW-CURRENT
SENSITIVE-GATE
Current
IT(RMS)-A
Voltage
Range V
1.6- 2.5
100-400
1.9 - 2.5
100-600
200-400
6
3.3 - 6
200-600
Package
TO-5 & TO-5
w Red.
TO-5 & TO-5 w Red.

TO-220AB
(VERSAWATT)
TO-66 & TO-66 w Red.

TO-220AB
(VERSAWATTI
2N5757
T2310
T2311
T2312
T2313
T2850
T2800
T2801
15
200-600
200-600
Press-Fit
200-600
200-600
200-600
Isolated-Stud
PressFit
2N5568
T4101
Stud
2N5570
T4111
200-600
Isolated-Stud
TO-66
10
10
10
15
200-600
40
200-800
Press-Fit
40
40
200-800
30
Stud
Isolated-Stud
Press-Fit
200-800
2N5572
T4100
T4110
2N5574
T4120
T4121
Light Control
Motor Control-Static
T6410
2N5446
T6420
Heat/Comfort Control
T6401
T6411
30
30
200-600
Stud
Isolated-Stud
60
200-600
Press-Fit, Flex. Id
T8401
60
60
200-600
200-600
Stud Flex. Id
Isolated-Stud
Flex.ld
T8411
T8421
80
80
80
200-600
200-600
200-600
Press-Fit
Stud
Isolated-Stud
0.5
200-400
15
15
200-400
TO-5
Press-Fit
Stud'"
6
6
40
40
25
25
200-400
200-400
Press-Fit
200-400
200-400
200-400
Stud
Press-Fit
Stud .
200-400
200-400
Press-Fit
Stud ..
200-400
Press-Fit
Stud ..
200-400
Triacs in most series are characterized

RCA-CA3058,
CA3059, and CA3079
General Purpose
AC Power Switching
T4700
2N5443
T6400
200-600
200-600
10
10
Circuit to Power Control
T2710
100-450
Stud
Ie Control
T2500
T2700
6-8
15
15
Typical Applications
Series
T2300
T2301
T2302
& Speed
Solid State Static Switching

Three Phase Power Control
T6421
T8430
T8440
T8450
T2304
T2305
T4103
T4113
T4104
Airborne-Type
Equipment
and
T4114
60-Hz Applications
Requiring
T4105
T4115
High Commutating
dv/dt
Motor Starters
T6404
T6414
T6405
T6415
for applications utilizing Zero-Voltage switching with

IC triggering circuits - see product matrix for types in each series.
For Types not listed, contact your RCA Representative.
200-600
100-600
4.5
3.3 - 7
200-600
1.7 - 5
200-600
100-400
12.5
100-600
100-600
100-600
20
20
20
100-600
TO-8
TO-8
TO-5, TO-5 w Red.,
TO-5 w Spdr.
TO-66 & TO-66 w Red.
TO-220AB
(VERSAWATT)
TO-3
Press-Fit
Stud
Isolated-Stud
2N4102
S2400
S2600 52610
S2620
2N4101
S2710
S2800
2N4103
S6200
S2610
S6220
Fuel Igniters
CD Ignition, "Crowbars"
CD Ignition
CD Ignition,
Small Motor Control
CD Ignition, Regulators,
Small Motor Control,
and General Purpose
General Purpose
Application Information
SCR's (cont'd)
GENERAL PURPOSE PHASE CONTROL
Current
IT(RMS)-A
10
10
10
Voltage
Range V
100-600
100-600
Series
Package
Press-Fit
S6201
5tud
IsolatedStud
52611
35
100-600
100-800
Press-Fit
56221
2N3873
35
100-800
5tud
2N3899
35
100-800
25-600
Isolated-Stud
TO-48
TO-48
526420
25
16
25-500
General Purpose
2N690
2N1850A
200-600
TO-66
53700
High-Frequency
TO-66
TO-66
53701
Laser Diode Driver
600
700-750
100-700
TO-66 & TO-66 w Rad.
600
35
600
50-600
TO-66
TO-48
TO-48
35
53702
53704
53703
53705
53706
Power Supplies
110 TV Deflection
53714
56431
2N3658
2N3653
90 TV Deflection
Pulse Modulators
I nverters, Choppers
ITR's
TV Horizontal Deflection
5
400- 750
TO-66
Rectifiers
STANDARD-lead-Type
Hermetic and Plastic Packages
Current
IO-A
Voltage
Range - V
Package
0.75
1
100-600
50-600
00-1
00-1
1.5
0.75
1
0.75
50-1000
Plastic
200-800
200-800
200-1000
00-26
00-26
00-26
200-800
00-26
6
12
50-600
50-600
00-4
00-4
20
40
50-600
50-600
Current
Voltage
Range - V
IF(RMSrA
3
1.5
700-750
lN1764A
1N2864A
01201
1N5399
1N3196
lN5214
lN3563
lN5218
00-5
lN1190A
Series
00-1
00- 15 (Plastic)
02102
00-26
02601
1.9
9
18
50-600
50-600
00-4
30
30
50-600
00-5
50-400
50-600
00-5
00-5
00-4
General Purpose
1N1348B
00-5
Package
1N547
1N1206A
1N1198A
50-800
50-800
60
Series
1N445B
02201
1N3883
lN3893
General Purpose
TV Deflection.
Inverters,
and High-Frequency
Power Supplies
02406
02412
1N3903
02520
1N3913
02540
Inverters and High-Frequency

Power Supplies
Triacs
[Klm3LJD
Thyristors
2N5754 2N5756
2N5755 2N5757
T2313 Series
Solid State
Division
n:-~:~:.
,"Cjl
I
MAIN
TERMINAL 2
For
For
For
For
INAL 1
l-L
GATE
J
3/
Low-Voltage Operation
120-V Line Operation 240-V Line Operation High-Voltage Operation
171
Features:
2N5754
2N5755
2N5756
2N5757
.25/40
mA IGT
Package for Printed
3-Lead
Small Size ...

These
RCA triacs
switches
that
are gate-controlled
are designed
on-state
for either
negative
gate triggering
The
gate
polarity
sensitivity
full-wave
to switch
from
of applied
voltage
silicon
an off-state
Suitable
ac
to an
with positive
or
of
these
control
control
Shorted
Circuit
for Remote
MAXIMUM
triacs
permits
the
use
Emitter
Design
Board Applications
Switching
RATINGS,
Applications
Absolute-Maximum
For Operation with 50/60-Hz,

Resistive
or Inductive Load
REPETITIVE
voltages.
economical
transistorized
use in low-power
phase
- 2N5754, T2313A (40684)2N5755, T2313B (40685)2N5756, T2313D (40686)- 2N5757, T2313M (40687)-
Values:
Sinuosidal
Supply
PEAK OFF-STATE VOLTAGE
of
circuits and enhances their

and load-switching
appli-
2N5755,
2N5756,
2N5757*
utilize
a
(similar to JEDEC TO-51 and have an RMS
100
200
400
600
RMS ON-STATE CURRENT
IT(RM5)
Conduction angle 360;

0
Case temperature (TC) = 70 C
2N5754, 2N5755, 2N5756, 2N5757
Ambient temperature (TA) = 2SoC
on-state current rating of 2.5 A and repetitive peak off-state

voltage ratings of 100, 200,400,
and 600 volts, respectively.
For other conditions.
Types
PEAK SURGE (NON-REPETITIVE)

ON-STATE CURRENT
T2313A,
T2313B,
T2313D,
T2313M'"
the 2N5754,
2N5755,
2N5756,
2N5757,
have factory-attached
heat-radiators
and
printed-circuit
board applications.
but
for
1.9
T23 I 3 serie~
are the same as

respectively
are intended
V DROM
Gate Open, TJ = 65 to 100C

2N57 54, T2313A
_ ... - ..
2N5755,T23l3B
.
2N5756, T23l3D
.
2N5757, T23l3M.
cations.
Types
2N5754,
compact package
Voltage
See Figs.
For one full cycle of applied

voltage (6o-Hz, sinusoidal)
IT5M
principal
For one full cycle of applied principal

voltage (50-Hz, sinusoidal)
.
For more than one full cycle of applied
voltage ..
PEAK GATE-TRIGGER
2,3.4, & S.
25
21
See Fi~.6.
IGTM
CURRENT
For 1 J.J.s1 max

GATE POWER DISSIPATION:
PEAd
For 1 J.J.smax
GM
10
AVERAGE
*
*
For either polarity of main terminal 2 voltage (VMT2) with reference
to main tenninal l.
t
t
For either polarity of gate voltage (VG) with reference to main

terminal
1.
For infonnation on the reference point of temperature measurement,

see Dimensional Outlines.
In accordance with JEDEX:; registration
data format (JS-14, RDF-2).
Forcase
temperature
o
(TC) = 60 C.
For ambient temperature
TEMPERATURE
Storage.
Operating
.
(case)
o
(TA) = 2s C ...
PG(AV)
0.15
0.05
RANGEf:
-65 to 150
.
.
LEAD TEMPERATURE:
During soldering, terminal temperature at
a distance ~ 1/16 in. (1.58 mm) from the
case for 10 s ..................
-65 to 100
c
c
LIMITS
ALL
CHARACTERIST
UNITS
Min.
Peak
Off-State
Current:.
Gate Open, TJ = 1000C and VDROM = Max. rated value

Maximum
IOROM
Typ.
Max.
02
075
mA
2.2
2.6
1.8
35
6
20
82 See Fig.8.~
mA
Voltage:.
On-State
For iT = 10 A (peak) and TC = 25C ...........

..... - ...
For iT = 3.5 A (peak) and TC = 250C .. ................
DC Holding
TYPES
SYMBOL
IC
VTM
Current:.
Gate Open, Initial
principal current = 150 mA (OCl, VO= 12V

At TC = 25C ..
. .....
At TC = -65C .. ..........................
For other case temperatures ... .. ...................
Critical
Rote-of.Rise
of Off.State
Current:.
voltage
Mode
ositive
egative
positive
negative
positive
negative
negative
positive
1+
positive
negative
positive
negative
positive
negative
negative
positive
-65C
I'
111+
F or other case temperatures
Gote-Trigger
Voltage:-
IGT
-See
..
5
5
10
10
25
25
40
40
30
30
40
40
60 60 100 100 -
Fig.1!
mA
For Vo = 12 V (OCI and RL = 300

. ...... ....
At TC = 25C ..
At TC = -65C . .. . . ....... . .. .. .... . ...
...
For other case temperatures ..
For vo = VOROM and RL = 1250
At TC = 1000C ........ ....... ...........
.... ....... . ... ...
. ... ....
Thermo I Res istonce,
VIpS
100
VG
VMT2
I'
III"
I'
111+
III
DC
dvldt
rise,
10
For Vo = 12 V (OCl,
RL = 300 , and
TC = 25C
TC
Voltage:.
For Vo = VOROM, exponential

and gate open, TC = lOOoC
DC Gate-Trigger
IHO
...
........
0.9
1.5
VGT
-See
......... .......
Fig.12.
2.2
3-
0.2
.........
Junction_fa_Case:
..........
SteadyState .........
For either polarity of main terrlliral 2 voltage (VMT2)

With reference
main terminal
.
In accordance with JEOEC registration
data format
US'l4, ROF 2).
QUADRANT
No.1
MAIN TERMINAL
--ON
POSITIVE
STATE
/IH
,;
QUADRANT
No. III
MAIN TERMINAL
NEGATIVE
IH
2
ON
STATE
_ T
BJC
8.5
C/W
rl~
Gml
CURRENT WAVEFORM: SINUSOIDAL

LOAD: RESISTIVE
OR INDUCTIVE
CONDUCTION ANGLE: 3600
CASE TEMPERATURE
(TC): MEASURED
AS SHOWN ON DIMENSIONAL
'"'"5;>
"''"-',,-....u
~ '"
Ocr
-' ...."
OUT LINE
180"\J36<:J'
100
CONDUCTION
80
" c"r
"" "''""x'"...."
"
70
60
0.5
123
1.5
RMS ON-STATE
AMPERES
2.5
3.5
[IT(RMS1]
fULL-CYCLE RMS ON-STATE AMPERES [ITtRMSI]
Fig. 2 -
Power dissipation
10'3".
ANGLE
81 + 8
90
92LS-138eR3
Maximum allowable case temperature vs. on-state

current.
on-state current.
FORCED-AIR COOLED,400 TO 1000 FT/MIN,HEAT RADIATOR ATTACHED.

TRIAC WITH HEAT RADIATOR
TRIAC,NO HEAT RADIATOR, PRINTED-CIRCUIT BOARD MOUNTED.
~'~
CURRENT WAVEFORM: SINUSO IOAL

lOAD; RESISTIVE OR INDUCTIVE
CONOUCTION
ANGLE: 360
100
'"
'" u 90
~
Z
".
'l'1
"'~ ....~
80
j ~
70
DEVICE
HEAT
CAP.
LEAD
LENGTH
60
"
50
.,X
ffiUNT'NG
HEAT
ON
~ I"
:Q114'
SOLDERED
JfI6"-THICK
ATURE
~.
1/4" FROM
DEVICE
HEAT
. __ .~
TEMPER-
CASE
FOR
COPPER
MEASURED
SINK
ON
""
SINI<,
HEAT
0)-
HEAT RADIATOR
100
SOLDERED
1/16- THICK
ATURE
MOUNTING
~cr
""
0",
"",
" ....
FOR
ON
@TRIAC,NO
SINK.
COPPER
TEMPER
MEASURED
SINK
ON
1/4~ FROM
CASE
CAP.
LEAD
LENGTH
~ I"
0.5
RMS ON-STATE
1.5
AMPERES
2.5
[InRMSI]
92LS- 2.097"2
Fig. 5 -
Maximum allowable ambient temperature vs. on-state

current.
SUPPLY FREQUENCY: 50/60 Hz

~~~D~~:~~~~r~EAMPERES
'"
~
z
CASE TEMPERATURE
I I I
25
~'i
....
'"
~;
1'\
20
~~ "~~
z"'-
15
-"
~4
~
'"
~
ITel:
10
" "",
:2.5
[IT(RMSJ]
70C
GATE CONTROL MAY BE LOST DURING AND IMMEDIATELY FOLLOWING SURGE CURRENT
INTERVAL.
OVERLOAD MAY NOT BE REPEATED UNTIL
JUNCTION TEMPERATURE
HAS RETURNED TO
STEADY - STATE RATED VALUE.
""
-........
~H'
50 Hz
5
I
4
I
2
3
POSITIVE OR NEGATIVE
INSTANTANEOUS
ON- STATE VOLTS (\IT)
92C5-15713
._-t:\
-;:.
,,, ....
,,,, ..." ....
'"'.~ ...
ENCLOSED AREA INDICATES

LOCUS OF POSSIBLE
TRIGGERING POINTS.
F
V>
'::;
;
'"wg
~
10
8
"w
>
~
'""
>
w
i=
in
~
92CS-15719RI
Fig. 8 -
DC holding current (positive or negative) vs. case

temperature.
0.1
0.001
80.01
8 0.1
POSITIVE OR NEGATIVE DC GATE-TRIGGER
8 I
AMPERES(IGT)
92CS-15715RI
Fig.
9-
Gate trigger characteristics and limiting conditions

determination of permissible gate trigger pulses.
NOTE,
loads
FOR INDUCTIVE
LOADS CONNECT
POINTS AI AND BI
TO TERMINALS
A AND 8 RESPECTIVELY.
rent
surges
2.5 ampere2
IO-ohm
power
load.
mined
Power
IO-ohm
r
81
incandescent
lamp
produce
burnout
curwith 12t values
greater
than
a
RCA
TRIAC
For
which
for
seconds.
resi stor
rating
in
This
rating
of
series
can
connect
appropri
with
be
ate
the
deter-
as follows:
Rating of
Resistor
= IO(rms
92LM-1972R2
o
-70 -GO -50 -40 -30 -20 -10 0
10 20
CASE TEMPERATURE {Tc)_OC
30
40
load
current)2
INCHES
SYMBOL
MILLIMETERS
NOTES
MIN . MAX. MIN.

1,0
A
I,b
. 190
.240
.017
ID
.210
.260
4.83
6.10
.44
.335
.021
.366
5.33
6.60
.53
8.51
9.30
.015
.330
.035
8.38
.89
.028
.029
8.13
.38
.71
.975
.74
.045
1.025 24.76
.100
2.54
jDl
REFRENCE
POINT FOR CASE
~~~~~~T~:;T
The temperature
reference
point specified
should be used when
making temperature
measurements.
A lowmass temperature probe
Or thermocouple
having wire no larger than AWG No. 16 should be
attached at the temperature reference point.
MAX.
.035
.89
1.14
26.03
1
45 NOMINAL
50 NOMINAL
r'F;J-'
.,.
.AX
630
'101
1235
INCHES
SYMBOL
I
0
..,
040
OSS
170
910
115
</>P
191
</>P,
093
]G'
09\
[}
MOUNTING TAB
(LEAD NO 2 BEHIND
MOUNTING TAB)
F,
L
4 DIMPLED
Sf ANDOFFS
MILLIMETERS
7"
87S
0,
.,
",w
.,.
755
048
061
998
687
048
1002
689
Oil
NOTES
.AX
16.00
]1]7
3D61
18923
22.22
1.02
19177
2299
140
431
23.37
171
7.493
7.747
2.362
2.413
121
157
25.349
17.45
1.219
25.450
1750
1320
)
)
NOTES,
</>P,
"t-n t-~".." '
I.
0.035 e.R.S.,
finish:
2.
Recommended
hole size for printed-circuit
electroless
nickel
plate
board is 0.070 in.
(1.78 mm) dia.

1
MOUNTING
TABS
(NOH2l
POIN r FOR CASE

TEMPERA TURE
MEASUREMEtH&
TERMINAL
3. Measured
at bottom of heat radiator
..The specified
temperature-reference
point should be used when
making temperature measurements.
A low--mass temperature probe
Or thermocouple
having wire no larger than AWG No. 26 should be
CONNECTIONS
For Types 2N5754, 2N5755, 2N5756, 2N5657

Lead No.1
- Main terminal
Lead No.2
- Gate
Case, Lead No.3
- Main terminal
Lead No.1
Lead No.2
Heat Rad., Lead No.3
- Main terminal
- Gate
- Main terminal
[]Qm5LJ1]
Thyristors
Solid State
Division
T2300 T2302 T2310 T2312
Series
2.5-Ampere Sensitive-Gate
Silicon Triacs
.ltDjI
~M""IN
For Low-Power Phase-Control and Load-Switching Applications
~:~~INAL
1~ _~~=~l~
For Low-Voltage Operation - T2300A, T2302A, T2310A, T2312A

(40525, 40528, 40531, 40534)*
For 120-V Line Operation - T2300B, T2302B, T2310B, T2312B
(40526, 40529, 40532, 40535)*
For 240-V Line Operation - T2300D, T2302D, T2310D, T2312D
(40527, 40530, 40533, 40536)*
_GATE
-Numbers
T2310
Series
T2312
Serie.
RCA T2300,
gate-controlled
series has higher
trigger current
sensitivity
of
requirements
these triacs
dv/dt
and IC control
in low-power
phase control
circuits
with 50/50-Hz,
REPETITIVE
PEAK OFF-STATE
TJ
= _40
ReA
type numbers.
3-Lead Package for Printed

Board Applications
Shorted Emitter Design
Circuit
The T2300
series has rms on-state
current
ratings of 2.5
amperes
at a case temperature
of +60C while the T2302
series has the same ratings at a case temperature
of + 70C.
and higher gate
and enhances
their
use
applications.
and for T2300D
and T2302D,
400 volts.
The T231 0 and T2312 series are the same as the T2300 and
T2302 series, respectively,
but have factory-attached
heatradiators
cations.
and
or Inductive
Load
are
intended
for
printed-circuit-board
appli-
Values:
VOltage and Resistive
SinuDsidal Supply
VOLTAGE.
IGate Openl:
+900 C: T2300A, T2310A

T2300B. T231 OB
T2300D. T2310D
C to +1000C:
RMS ON-STATE
TC
TC
TA
are former
The repetitive
peak off-state voltage rating for T2300A
and
T2302A
is 100 volts; for T2300B and T2302B,
200 volts;
capability
RATINGS, Absolute-Maximum
= -4QOC to
are
are
to a conducting
with positive or
and load-switching
For Operation
TJ
triacs
They
than the T2300 series. The gate

permits
the use of economical
transistorized
MAXIMUM
(e.g. 40525)
Very High Gate Sensitivity

3 mA max. for T2300 and T2310 series
10 mA max. for T2302 and T2312 series
T2302-,
T2310-, and T2312-series
full-wave
ac silicon
switches.
designed
to switch from a blocking state
state for either polarity of applied voltage
negative gate triggering.
The T2302
in parentheses
Features:
T2302A. T2312A
T2302B. T2312B
T2302D, T231 2D
CURRENT
(Conduction
Angle = 3600):
= 600 c: T2300 series

= 70 C: T2302 series
= 250 C: T2300 series
T2302 series
For other conditions
A
A
A
A
See Figs. 2, 3. 4 & 5
For heat-radiator types.

2.5
2.5
0.35
0.40
See Figs_ 6 & 7

ON-STATE
For one full cycle of applied principal voltage

60 Hz sinusoidal.
50 Hz sinusoidal.
For more than on full cycle of applied voltage
CURRENT:
25
21
A
A
See Fig. 8
GATE POWER DISSIPATION+:

Peak (For 1 IJS max.l
Average:
TC
TA"
= 600 C
250 C
TEMPERATURE RANGEt:
Storage
Operating
(case):
40525,40526,
40527
40528,40529,40530
.
Heat-radiator types (From -400 C) Upper limits.
LEAD TEMPERATURE:
During soldering, terminal temperature at a distance2'
10
0.15
0.05
W
W
+40to+150
DC
-40 to +90
-40to+100
oC
0C
See Figs. 6 & 7
1/16 in.
(1.58 mm) from the case for 10 s .
For either polarity of main terminal 2 voltage

(VMT2) with reference to main termin~1 1.
For information on the reference point of

temperature
measurement
see Dimensional
Outlines.
ELECTRICAL CHARACTERISTICS
At Maximum
Ratings and at Indicated Case Temperature (TC) Unless Otherwise Specified
LIMITS
SYMBOL
T2300 Series
T2302 Series
T2310 Series
T2312 Series
UNITS
MIN. TYP. MAX. MIN. TYP. MAX

Peak Off-State Current:
Gate Open and VOROM = Max. rated value
At Tj = +1000 C .. __ .. __ . __
_ .. _
At Tj = +900 C
,
.
.
Maximum On-State Voltage:'

For iT = 10 A (peak) and TC = 250 C
DC Holding Current:'
Gate Open, Initial principal current = 150 mA (OCl, Vo =12
At TC = 250 C __
_ .. _ . _
_ . _ ..
For other case temperatures
.
Critical Rate-of-Rise of Off-State Voltage:'
For Vo = VOROM, exponential voltage rise,
and gate open
At TC = +1000 C
At TC = +900 C
DC Gate-Trigger Current:.t
For Vo = 12 V (DC).
RL = 30 n, and
TC = 250 C
Mode
1+
1111111 +
VMT2
positive
negative
positive
negative
Thermal Resistance, Junction-to-Case:

SteadyState
IHO
0.2
0.75
0.2
1.7
2.2
1.7
2
5
See Fig. 14
0.75
mA
2.2
6.5 15
See Fig. 15
mA
V/IlS
.
.
.
10
1
1
3
3
3.5
3.5
10
10
2
2
3
3
7
7
10
10
VG
positive
negative
negative
positive
.
.
.
VTM
dv/dt
DC GateTrigger Voltage: . t
For Vo = 12 V (DC) and R L = 30 n
At TC = 250 C
For vO = VOROM and RL = 125 n
At TC = 1000 C
At TC = +900 C ......................
IOROM
See Fig. 12
11
o~~ >~
See Fig. 13
12 2
11
12.2
'I = o,r'l~
B.5 (max.)
(T2300 series)
B.5 (max.)
(T2302 series)
QUADRANT
No.1
MAIN TERMINAL 2
POSITIVE
-ON
STATE
IH
,,
+VDROM
OFF STATE
QUADRANT
No. III
MAIN TERMINAL 2 ON
NEGATIVE
STATE
WAVEFORM
SINUSOIDAL
CURRENT
LOAD"
RESISTIVE
OR INDUCTIVE
RATING APPLIES FOR ALL
CONDUCTION
ANGLES.
TEMPERATURE
IS MEASURED ON BASE
LEADS.
POINT MIDWAY BETWEEN
rl~
9ml
AT
'"51' 'DO
,
w_
-' u
"'I-
~~
j ~
~ aD
,.=> '""-,.
~~
,.
CONDUCTION ANGLE
T2302
91 +- 8m
Series
90
70
'DO
'"
'"..."u 90
Z
..
RMS
1.5
ON-STATE
CURRENT
2.5
[ITlrms
SINK
LEAD
MOUNTING
1/4"
FOR
60
ON
Series
ON
FROM
HEAT
HEAT
3
)]-A
20
0.2
RMS
ON-STATE
0.4
0.6
CURRENT
0.8
I!T (rmsl]
1.0
- A
I"
O'I4'
DEVICE
M
I/IS
ATURE
itT'NG
LENGTH
T230
,.
,... ,
60
COPPER
TEMPER-
MEASURED
HEAT
CASE CAP.
"1X
SOLDERED
SINK.
ArURE
Series
Ow
j ~ 70
"w
0.5
HEAT
'l'1
=>
DEVICE
ON I/IS"-THICK
T2302
~~
;0",
T2300
Series
Wfh,-r
ANGLES
FOR
~ ~ 80
..
,.
CON
,aO'\J360"

OR INDUCTIVE
LOAD: RESISTIVE
aUCTION
RATINGS APPLY FOR ALL
SOLDERED
THICK
SINK.
COPPER
TEMPER-
MEASURED
SINK
114
CASE
CAP.
LEAD
LENGTH
FROM
= ,M
ON
0.5
1.0
1.5
RMS ON-STATE
2.0
25
0.5
CURRENT [IT(rmsl}-A
RMS ON-STATE
1.5
CURRENT
25
2
[IT(
rms)]-A
SUPPLY FREQUENCY" 50/60 Hz

~g~D ~~:~~~~I~~URRENT
CASE TEMPERATURE
[IT(RMSl]"
25
W'
~'i
0-00
~;
20
wo~~
0'"
z'"
15
-'>
~u
'"
~
'"
~
GA~E CONTROL MAY BE LOST DURING AND IMMEDIATELY FOLLOWING SURGE CURRENT
INTERVAL.
OVERLOAD MAY NOT BE REPEATED UNTIL
HAS RETURNED TO
STEADY-STATE
RATED VALUE.
1\
1\
"- ""
......... "'-
.....
10
~ I
o.z
o
wi"
w!!!
>0
~Hz
<I
'"w;o
~~
50 Hz
CURRENT
WAVEFORM
SINUSOIDAL
LOAD
RESISTIVE
OR INDUCTIVE
CONDUCTION
ANGLE
3600
2.5A
(TC)" 70C
:E:-': .._ ::~: -_: ~~
I
1.5
2
INSTANTANEOUS PRINCIPAL
VOLTAGE (vT)-V
::
.:
~" ....:::,:,T.:,:,:::I"'!"~I:
3
:;to
." :-
.~~,:
~F .::'.:::
-;;,"1/
.....
-':L:
//
131~ ....'~~""'"
._---z?
.. :~~
:.:c::
.. -
.:: :.
FI
::: ,t:~:-
.,. :::1: . ~~:
CHARACTERISTICS
APPLY FOR ALL
TRIGGERING MODES.
PRINCIPAL VOLTAGE "12V (DC)
LOAD.:: 30 OHMS. RESISTIVE
0.5
....
CHARACTERISTICS
APPLY FOR INDICATED
MODES.
PRINCIPAL
VOLTAGE aI2V(DCl
LOAD" 30 OHMS. RESISTIVE
u
0
TRIGGERING
u
0
o!
'"
~
cr
1;
20
40
I-
I-
~
cr
cr
30
~
''~
""
.:,
cr
20
g
<r
!
Ii
'"
!<
'"
10
o
- 40
-30
-20
-10
CASE TEMPERATURE
10
20
lTc)_OC
30
-20
92LS-1978RI
CASE
Fig. 12 - DC gatetrigger current characteristics for T2300 and

T2310 series.
INITIAL PRINCIPAL CURRENT::150mA
50 ~::~
E ...~~
_
......... -
... .
-'-1:'
.- _. ..
IZ
..:
0
(T C) -
92LS-1974RI
Fig. 13 - DC gate-trigger current characteristics for T2302 and

T2312 series.
~=
..
:~~F:.:_.- ..- . ...

.... <.. ,''', ... ;:~
=._.
::::
-to
TEMPERATURE
",
:z:
H
. ;;-:= ..
IZ
w
30 ~~
_.. ~ .~'
C)
-...;::
__
20
:o
10
_...--:
. __.
'4
....
'i'j"
~
z
_.
__
...
...
=~s~_.
.- __..
-.
.._.
..... _.-
..
~,~~~~~:,~~~,
10
..
o tltHH~o:::~
-40
-30
-20
-10
CASE TEMPERATURE
Fig. 14 -
10
<Tcl-oC
:r;
20
30
-30
92LS-1975Rl
DC holding current characteristics for either direction

of principal current for T2300 and T2310 series.
13
~
:::'"
I-
SHADED
VARIOUS
gTll
'"
~:'-t rtt
. -:-:--;,t,
<l
T; ~-40
I;>
0 C
cr
w
"'
<l
'"
t-
~+25
I-l-J-.- -+-
+.,-1
"
TRIGGERING
MOOES.
FOR
..
POINTS
t: : j 11:
AT
IT;1. 1 I
lit
II
It-
..
;>
>=
<l
.
IT
~1
I
I
+25
;>
>=
iij
MAXIMUM
UNIT
WILL
"-
I~
'"
2
POSITIVE
*tcii
TRIGGER
4
OR
NEGATIVE
~-;+~
.. f;~
oC
;twH'CH
Tj
FOR
~~
:: +90C
6
GATE-TRIGGER
20
9ZLS-1976RI
;i :~
; I~
w
z
cr
10
it:;:::-
0
(T C I _C
l.
..
r-t-
1
t
~ -
..
w
l-
7+r~'
---+ ++
t-'-
''""
I-
OF POSSI SLE
LOCUS
FOR ALL OPERAT ING
GATE TRIGGER
VOLTAGE
JUNCTION
TEMPERATURE
-10
TEMPERATURE
Fig. 15 - DC holding current characteristics for either direction

of prinicpal current for T2302 and 72312 series.
It~tii1t:Uj;i.L~::
l::: :1; : ; !
MAXIMUM
INDICATED
-'
0
AREA
INDICATES
TEMPERATURES
-20
CASE
~ t
JTj
Is
CURRENT
10
(tGTl
mA(OC)
40
it
MAXIMUM
CURRENT
JUNCTION
Fig. 16 - Gate characteristics for T2300 and T2310 series.
GATE
TRIGGER
FOR INDICATED
TEMPERATURE
(TJ)
17~mqm
30
MAXIMUM
INDICATED
Tj'
GATE TRIGGER
VOLTAGE
JUNCTION
TEMPERATURE
FOR
(Tj)
40 C
MAXIMUM
CURRENT
JUNCTION
GATE
TRIGGER
FOR INDICATED
TEMPERATURE
IT;)
MAXIMUM
VOLTAGE
AT WHICH
NO UNIT WILL TRIGGER
FOR
T+IOOC
15
20
GATE-TRIGGERING
RFI
25
CURRENT
IIGT)
30
-
mA (DC)
FILTER
r-----~l
I
*RCA
I
TRIAC I
(SEE
I
TABLE 1 I
D
I
CF
1.2K
"
LF
2W
I~/~~
FOR PHOTOCELL CONTROL

CONNECT POINTS A' AND B'
TO TERMINALS
A AND n,
NOTE:
PHOTOCELL
D' TO TERMINALS
C AND
D, RESPECTIVELY
,1
,RESPECTIVELY
FOR INDUCTIVE LOADS

CONNECT POINTS C' AND
c1
0.1 eF
200V
FOR
120V
INPUT
400V
FOP
240V
INPUT
For incandescent lamp loads which produce burnout

current surges with 12t values greater than 2.5 ampere2 seconds, connect a 10-ohm resistor of appropriate wattage rating in series with the load. The
appropriate wattage rating can be determined as follows:
AC
INPUT
RFI FILTER
C1
C2
O.lJJF
O.lJJF
100Kn
200V
100V
1/2W
O.lJJF
O.lJJF
250Kn
400V
100V
R1
LF *
(typ.)
CF*
hyp.)
2.2Kn
15Kn
100JJH
O.lJJF
TZlOOB ,T231 OB
1/2W
1/2W
200V
T2302B ,TZ312B
3.3Kn
15Kn
VOLTAGE
120V
60Hz
240V
50Hz
lW
RCA
TYPES
R3
R2
1/2W
1/2W
200JJH
O.lJJF
Z3000 ,T2302D
400V
Z31OD,T2312D
INCHES
SYMBOL
MILLIMETERS
MIN.
MAX.
MIN.
MAX.
0.190
0.210
4.83
5.33
0.240
0.260
6.10
6.60
ob
0.017
0.021
0.44
00
0.335
0.366
8.51
9.30
0.330
8.13
8.38
0.89
00
001
NOTES
0.53
0.015
0.035
0.38
0.028
0.035
0.71
0.89
0.029
0.045
0.74
1.14
0.975
1.025
24.76
26.03
0.100
2.54
1
45" NOMINAL
50 NOMINAL
"The temperature reference point specified should be used when

making temperature measurements. A low-mass temperature probe
or thermocouple having wire no larger than AWG No.
should be attached at the temperature reference point.
16
r "1' J
INCHES
SYMBOL
0
0,
E
MOUNTING
(LEAD
NO.2
MOUNTING
F
F,
TAB
BEHIND
0'
TAB)
",
4 DIMPLED
STANDOFFS
N,
N,
W
<PP
1nJ,m~,'
POINT
FOR
TEMPERA
CASE
TURE
MEASUREMENT
MIN
1.205
0.775
0.875
0.040
0.160
0.920
0.295
0.093
0.048
0.998
0687
0.048
MILLIMETERS
MAX
MIN
0630
1.235
0.785
0.905
0.055
0.195
30.61
19.69
22.22
1.02
4.06
2337
7.493
2.362
12'
25349
1745
1.219
0.305
0.095
0,062
1.002
0.689
0.052
MAX.
NOTES
16.00
31.37
19.93
22.99
1.40
4.94
7.747
2.413
1.57
25.450
17,50
1.320
3
3
NOTES:
1. 0.035 C.R.s., finish:
2.
Recommended
is
OlD
hole
electroless
size
nickel
for printed-circuit
plote
board
in. (1.78 mm) diD.
The specified temperature-reference point should be used when

making temperature measurements. A low-mass temperature
probe or thermocouple having wire no larger than AWG No. 26
should be attached at the temperature reference point.
Lead No.1 - Main terminal 1

Lead No.2 - Gate
Case, Lead No.3 - Main terminal 2
Lead No.1 - Main terminal 1

Lead No.2 - Gate
Heat Rad., Lead No.3 - Main terminal 2
[J\l(]5LJD
Solid State
Division
T2311
Series
2.5-Ampere Sensitive - Gate
Silicon Triacs
For Low-Voltage Operation - T2301A, T2311A (40766,40767)*
For 120-V Line Operation - T2301 B, T2311B (40691,40761)*
For 240-V Line Operation - T2301 0, T2311 0 (40692.40762) *
-Numbers
,f '\
in parentheses
Very
Shorted
High
Gate
Emitter
Heat-Radiator
Small
The
or negative
high gate sensitivity
(similar
to JEDEC
triacs
gate triggering
of these
triacs
TO-5)
are supplied
permits
The
T2311-series
triacs
are
numbers.
the
same
for Printed
for Remote
Circuit
Board
Switching
With the exception
Applications
Applications
of the characteristics
listed below,
shown for the T2300 series in bulletin

applicable to the T2301 series.
File
No.
470
data
are
the use of
in a compact
peak off-state
triacs.
but have factory-attached
intended for printed-circuit
board
type
voltages.
and have an RMS on-state
rating of 2.5 A and repetitive

100, 200. and 400 va Its.
ReA
Design
Package
economical
transistorized
or integrated
control circuits and
enhances
their use in low-power
phase control
and loadswitching applications_
The T2301-series
are former
-4 mA
Sensitivity
Size - Suitable
RCA T2301and T2311-series

triacs are gate-controlled
full-wave ac switches_ These devices are designed to switch
from an off-state to an on-state for either polarity of applied
voltage with positive
(e.9. 40766)
Features:
voltage
package
Characteristic
DC ~Qte-Trigger
For
Limits
Current,
vo . 12 V roC),
Rl "30L. and
TC 15' C
IGT
Mode
I'
III"
1III ~
VMT2
positive
negtllive
positive
negative
vc;
positive
negative
negative
POSitive
Units
Min.
Typ.
Max.
I
1
1
1
4
4
4
4
current
ratings of
Data shown for the T2310 series in bulletin

applicable to the T2311 series.
File No. 470 are
as the T2301-series
heat-radiators
applications.
mA
and
are
For data on additional ReA sensitive-gate

refer to bulletin File No. 470.
triaes,
Thyristors
[IlCIDLJD
Solid State
Division
T2304 T2305
Series
400-Hz, 0.5-A
Sensitive-Gate
Silicon Triacs
For Control-Systems Application in Airborne and

Ground-Support Type Equipment
For 115-V Line Operation - T2304B, T2305B (40769,40771)**
For 208-V Line Operation - T2304D, T2305D (40770,40772)**
Features:
ReA T2304and
full-wave silicon ac
from an off-state to
voltage with positive
High Gate Sensitivity, IGT = 10/40 mA max.

di/dt Capability = 100 A/J.ls
Commutating dv/dt Capability Characterized at 400 Hz
Shorted-Emitter Design
T2305-series
triacs are gate-controlled
switches.
They are designed to switch
an onstate for either polarity of applied
or negative gate triggering voltages.
and
208
voltages
The
V RMS sine
high gate sensitivity
economical
These
resistive
triacs
are intended
or inductive
MAXJMUM
for operation
loads and nominal
RATINGS,
up to 400
line voltages
Absolute-Maximum
wave
and
repetitive
peak
off-stage
of 200 V and 400 V.
transistorized
Hz with
enhances
their
of 115
switching
applications.
use
of these
triacs
or integrated
in low-power
phase
permits
control
the
use of
circuits
control
and
and
load-
Values:
For Operation with Sinusoidal Supply Voltage at Frequencies lip to 400 Hz and with Resistive or Inductive Load.
T2304B T2304D
T23051l T2305D
REPETITIVE PEAK OFF-STATE VOLTAGE:'
Gate open, TJ = -50 to 1000C
RMS ON-STATE CURRENT (Conduction angle
Case temperalure (TC) = 900C
Ambient
temperature
(T A)
250C,
of applied
heat
VDRLJM
IT(RMS)
3600):
principal
ON-STATE CURRENT:
400
ITSM
voltage
400 Hz (sinusoidal)
60 Hz (sinusoidal)
..................................
For more than one cycle of applied principal
50
15
voltage
RATE-OF-CHANGE OF ON-ST ATE CURRENT:

VDM = VDROM, IGT = 60 mA, tr = 0.1 "s (See Fig. /4)
100
IGTM
PGM
PG(AV)
PG(AV)
Tstg
TC
....
Operating (Case)
LEADTEMPERATURE (During soldering):
At distances~
1/16 in. (1.58 mm) from the case for 10 s max
* For either polarity of main terminal 2 voltage (VMT2) with reference to main
For either polarity of gate voltage (VG)
...Fur temperature
measurement
reference
with reference
to main
point, see Dimensional
A
A
See Fig. 5
di/dt
PFF~~IGI'~1~},R1G8-~:figURMNT.
.
PEAK (For j I'S max., (See Fig. /0)
AVERAGE (At TC = 600C)
(At T A = 25C, without heat sink)
TEMPERATURE RANGE:
Storage
200
0.5
A
0.4
A
See Figs. 3 & 4
.
sink ...............
.

For one cycle
without
terminal
Outline.
I.
TL
terminal
1.
AIl'S
A
10
0.15
0.05
-50 to 150
-50 to 100
225
W
W
W
c
c
c
At Maximum Ratings and at Indicated Case Temperature (TC) Unless Otherwise Specified
LIMITS
CHARACTERISTIC
SYMBOL
T2304 Series
Min.
Peak Off-State Current:'

Gate open, TJ = 100oC, VOROM = Max. rated value
Maximum
OnState
IDROM
Voltage:'
....
For iT = 10 A (peak), Te = 25C ..................

DC Holding
Max.
0.2
Tvo.
Max.
0.75
0.2
0.75
mA
1.7
2.2
1.7
2.2
15
15
30
mA
Min.
Current:'
vo
Gate open, Initial principal current:::: 150 mA IDC).
12 V.
TC = 250e ......................................
Critical
VTM
Typ.
UNITS
T2305 Series
Rate-of-Rise
....
of Commutation
IHO
; ................
-SeeFi
Voltage:'
For vD = VDROM, I(T(RMS) = 0.5 A, commutating

di/dt = 1.8 A/ms, gate unenergized, Te = 900e
(See Fig. 151
dv/dt
Critical Rate-ofRise of Off-Stage Voltage:'

For vD = VOROM, exponentail voltage rise. gate open,
........ ......... ...... . .. . ... ....
TC= l000C
DC Gate- Trigger Current:'
.B&9-
Mode
VMT2
VG
l+
positive
positive
RL =30 n
III-
negative
negative
Te = 25C
positive
negative
negative
positive
For Vo = 12 V (DC).
III+
... ..............
.........
V/ps
10
100
10
100
V/ps
dv/dt
IGT
3.5
10
25
3.5
10
25
-I
10
10
40
10
10
See FillS. 11 & 12_
40
7
7
11
2.2
-SeeFig.13-
VGT
0.15
Gate-Contro"ed Turn-On Time:

(Delay Time + Rise Timel
For vo = VOROM, IGT = 60 mA, tr = 0.1 /JS.
iT = 10 A (peak), TC = 250C (See Fig. 16)
2 voltage (VMT2)
......
DC Gate- Trillller Voltage:.t

ForvD = 12 V (DC), RL = 30n, Te = 250C
...........
. . . . . . . . .. . .
ForvO=VOROM,
RL = 125n, TC= 100C
Thennaf Resistance, Junction-to-Case:

...................
11
mA
22
V
0.15
tgt
I.B
- .... . ......
For either polarity
of main terminal
For either polarity
of gate voltage (V G) with reference to main tenninal
IIJ-C
with reference to main terminal

1.
2.5
B.5
1.
1.8
2.5
ps
8.5
OC/W
0.1
0.2
0.3
0.4
0.5
FULL CYCLE RMS ON-STATE CURRENT [In.M.1l
-A
0.1
F"ULL
0.2
CYCLE
RMS
0.3
ON-STATE
0.4
0.5
CURRENT
[ITtRMS)]
9ZCS-17092
TRIAC WITH HEAT RADIATOR

~:~~E~"i\~~TT
HitlRC~~~~6
TRIAC WITHOUT HEAT RADIATOR
CURRENT WAVEFORM, SINUSOIDAL
LOAD, RESiSTIVE OR INDUCTIVE
@
CONDUCTION
ANGLE:
-A
92CS-17093
SUPPLY FREQUENCY 60/400

Hz
LOAD: RESISTIVE
RMS ON-STATE
CURRENT[ITIRMSI]aO.5A
...~
~
CASE
TEMPERATURE
(Te) OOC
z
o
360-
~,
"'"
t:'2:40
~~
......
er!::'
a:~
,z 30
z
0"
Z
..~
-:>
~o 20
10
20
FULL
Fig. 4 -
CYCLE
RMS ON-STATE
CURRENT [IT(RMS)]
6 8 10
M
-A
SURGE CURRENT
92C5-11094
DURATION - FULL
102
options of these triaes.
CASE
TEMPERATURE
{Tel'"
25C
r,,~~:::iCiAiSiETEiMiPiEiRiAiTUiREi(iTIC)i'i25ifiCi~1111III!
-k.~0.s
t:!
:='t-
~~
....
~~ 04
~
~
:>0
~~ 0.3
~.,
!<~
:t:tt:t:
~~O.2
zo
0.809
ON - STATE
(POSITIVE
I.l
1.2
VOLTAGE ( VT) - V
OR NEGATIVE)
92CS-17095
Maximum allowable ambient temperature vs. on-state

current for the package/mounting
CYCLES
2.
INSTANTANEOUS ON-STATE
VOLTAGE IvTl-V
(POSITIVE
OR NEGATIVE)
103
100.
6
4
TRIGGERING
MODES: All
ENCLOSED
AREA INDICATES
LOCUS OF POSSIBLE
TRIGGERING
POINTS.
UPPER U Mil OF PERMISSIBLE

AVERAGE (DC) GATE POWER
DISSIPATION
AT RATED
CONDITION.
0.1
0.001
4 680.01
2
4
680.1
DC GATE TRIGGER CURRENT (IGT)-A
(POSITIVE
OR NEGATIVE)
-50 -40 -30 -20 -10 0

CASE
TEMPERATURE
Fig. 11 - DC gate-trigger current
VS.
10 20
30 40
92C5-17101
(T c) - C
case temperature for T2304 series.
oJ--- ------ -------I
/---
OlIO'
I
I
1
I
I
I
I
I
I
CO~UTATING
dv/dt
Fig. 15 - Relationship between supply voltage and principal current

(inductive load) showing reference points for definition
of
commutating voltage fdv/dtJ.
Vo
o_LL
I
I
I
I
I
I
I
I
I SNUBBER NETWORK
500 n ITO BE USED
1/2 W I FOR
INDUCTIVE
I ~g~~SU~:T~~EN
-'
:t
:_L __
In. I
o_L_L __
~
'0
_r - --..,
I
1'90%
I
I
POINT
I I
1-+----
'1'"'i0.I,...F1
fJ200V1
--L
--i--l---"
1---'"
I VOLTAGE (dv/dt)
CHARACTERISTIC
liS EXCEEDED
I
--j
f~:
VGT
o_L -------,.....10,"0
For incandescent lamp loads which produce burnout cur

rent surges with 12t values greater than 2.5 ampere2
seconds, con
nect a 10 - ohm resistor of appropriate
power rating in series with the
NOTE:
POINT
92CS-13366R2
load.
This rating can be determined
as follows:
Power Rating of _
2
10-ohm Resistor - 10 (rms load current)
Fig. 16 - Relationship between off-state voltage, onstate current,

and gatetrigger voltage showing reference points for
definition of turn-on time (tgt).
INCHES
MILLIMETERS
NOTES
SYMBOL
MIN. MAX. MIN.
.190
.240
.210
.260
4.83
6.10
b
O
Ol
.017
.021
.335
.366
.44
8.51
.015
.028
.029
.975
.330
.035
.035
.100
o
A
REFRENCE
POrH FOR CASE
~~'f;~~~T~::T
k
~ The temperature reference point specified should be used v.t1en
making temperature measurements. A low-mass temperature probe
or thermocouple having wire no larger than AWG No. 16 should be
f3
Lead No.1
- Main terminal
- Gate
Case, Lead No.3
- Main
5.33
6.60
.53
9.30
8.13
.38
.71
.74
8.38
.89
24.76
26.03
.89
1.14
2.54
1
Q
a.
Lead No.2
.045
1.025
MAX.
450 NOMINAL
500 NOMINAL
terminal
On special request, these triacs are also available with a

factoryattached heat-radiator intended for printedcircuit
board applications.
OOCD5LJ1]
Thyristors
T2306
T2316
T2606
T2706
Solid State
Division
T2806
T2616
T2716
T4106
T4107
T4116
T4117
T4706
T6406
T6407
T6416
T6417
Series
These triacs are gate-controlled
2.5-40-A, 100-600-V SILICON

TRIACS DESIGNED FOR USE
WITH IC ZERO-VOLTAGE
SWITCHES AS
TRIGGERING CIRCUITS
full-wave ac switches. They
are intended for ac load-control applications such as heating

controls
(proportional
or on-off);
lamp switching,
switching, and a wide variety of power-control
The RCA CA3058,
CA3059, and CA3079
motor
applications.
are monolithic
silicon IC zero-voltage switches designed for direct operation

from the ac line. They can drive the triac gate directly
provide
the
gating
signal
at
zero voltage
and
crossings for
minimum radio-frequency interference.
These triacs have gate characteristics which assure that the

zero-voltage switch can supply sufficient
drive current
to
trigger them over the operating-temperature range from

_40C to +85C. Ratings within this group of triacs range
For Power-Control and Switching Applications

at Frequencies of 50 to 60 Hz
from 2.5 to 40 amperes rms on-state current, with repetitive

off-state voltages available from 100 to 600 volts; and they
employ a wide variety of packages.
RATINGS AND CHARACTERISTICS
Rep. Peak
Type
Former
OffState
No.
RCA
Voltage
'T(RMS)
Type
VDROM
at Case Temp.
No.
(VI
(A)
(OCI
100
2.5
70
T2316A
40693
Typ. DC
Holding
Current
Current
and Voltage at 25C

1+
at
250C, IHO I
(mAl
6
Max. DC Gate Trigger Current
I
I
!
IGT
Package
111+
(mAl
VGT
(V)
45
1.5
For
Additional
Data.
Refer to
IGT
VGT
Bulletin
(mAl
(V)
File No.*
45
1.5
Mod. TO-5 on
414
Heat Radiator
T2316B
40694
200
2.5
70
45
1.5
45
1.5
"
T2316D
40695
400
25
70
45
15
45
1.5
"
414
T2306A
40696
100
25
70
45
15
45
1.5
Mod. TO-5
414
-----
45
1.5
"
414
T2306B
---- - -t --------------- ---- --------
40697
__
.0
_____
200
T2306D
40698
400
T6406B
40699
200
T6406D
40700
400
T6406M
40701
600
T6416B
40702
200
T6416D
140703
400
T64i6M
140704
40705
600
T6407B
T6407D
T6417B
T6417D
T6407M
T6417M
T4106B
RMS On-State
T4106D
200
140708
I 40709
I 40710
\40711
40712
I,
,I
I
I
I
i!
70
45
Ir
15
25
70
45
15
45
Mod. TO-5
414
40
70
25
45
1.5
45
1.5
Press-fit
593
40
70
25
45
1.5
45
1.5
"
593
1.5
45
1.5
"
593
1.5
45
1.5
Stud
593
593
40
70
25
45
40
65
25
45
40
65
25
45
1.5
45
1.5
Stud
40
65
25
45
1.5
45
1.5
"
30
65
25
45
1.5
45
1.5
1.5
"
459
1.5
Stud
459
1.5
Stud
459
1.5
Press-fit
459
1.5
Stud
459
1.5
Press-fit
458
1.5
"
458
30
65
25
45
1.5
45
30
60
25
45
1.5
45
1.5
45
1.5
45
400
30
60
25
45
600
30
65
25
45
600
30
60
25
45
1.5
45
15
80
20
45
45
80
20
45
1.5
15
1.5
45
200
400
_.-
1.5
200
400
40706
40707
,2
414
i
I
Press-fit
593
459
I
I
For
Type
No.
Former
RCA
Type
No.
Rep. Peak
Off-State
RMS On-State
Voltage
IT(RMS)
VDROM
(V)
Typ. DC
Holding
Current
and Volta!
at 250c4
1+
Current at
at Case Tamp.
25OC,IHO
IGT
(mA)
(mA)
(A)
(OCI
15
80
20
45
15
15
20
15
15
45
15
80
70
70
45
45
IGT
45
1.5
Stud
1.5
1.5
..
458
45
TO-66
300
40714
40715
40716
200
400
T4107B
40717
200
10
85
15
45
T4107D
T4117B
40718
400
10
85
1.5
200
400
10
85
15
15
45
40719
40720
45
10
85
15
40721
200
400
8
8
80
80
15
45
45
1.5
1.5
45
15
45
1.5
1.5
45
1.5
40722
Bulletin
File No.-
(mA)
40713
T4117D
Refer to
VGT
IV)
T4116D
T4706B
T4706D
T2806B
T2806D
Package
111+
VGT
(V)
T4116B
200
400
Additionel
Data,
Max. DC Gate Trigger Current
1.5
1.5
1.5
458
1.5
45
45
1.5
1.5
45
1.5
Pressfit
457
45
1.5
Press~fit
45
45
1.5
Stud
457
457
457
364
..
300
..
1.5
Plastic
45
1.5
1.5
45
1.5
TQ-66
..
364
351
T2706B
40727
200
75
15
T2706D
40728
400
75
15
45
1.5
45
1.5
TO-66
351
T2716B
40729
200
75
15
45
1.5
45
1.5
TO-56 with
351
T2716D
40730
400
75
15
45
1.5
45
1.5
Heat Radiator
&
..
A triac driven directly from the output terminal of the CA3058. CA3059. and CA3079 should be characterized for operation
triggering modes, i.e., with positive gate current (current flows into the gate for both polarities of the applied ae voltage).
. Except for gate characteristics,
data in these bulletins also apply to the types listed in this chart.
Technical information on RCA-CA3058. CA3059. and CA3079 is

contained in bulletin
For detailed
6182,
File No. 490.
application
information,
"Features and Application
Voltage Switches ".
see Application
Note
of RCA IntegratedCircuit
leAN
Zero
351
in the 1+ or 111+
OOm5LJD
Solid State
Division
T2500B
T2500D
Three-Lead Plastic Types for

Power-Control and Power-Switching
For 120-V Line Operation
Applications
T2500B (41014)t
T2500D (41015)t
Features:
60-A Peak Surge Full-Cycle Current Ratings
Shorted Emitter, Center-Gate Design
Low Switchi ng Losses
Low Thermal Resistance
PackageDesign Facilitates Mounting on a Printed-Circuit Board

Types T2500B and T2500D* are gatecontrolled full-wave
silicon triacs utilizing a plastic case with three leads to
facilitate
mounting on printedcircuit
boards. They are
intended for the control of ac loads in such applications as
motor controls, heating controls, relay replacement, solenoid
drivers, static switching, and powerswitching systems.
These devices are designed to switch from an off-state to an
on-state for either polarity of applied voltage with positive or
MAXIMUM
RATINGS, AbsoJuteMaximum
negative gate triggering voltages. They have an onstate cur

rent rating of 6 amperes at a Te of sooe and repetitive offstate voltage ratings of 200 volts and 400 volts, respectively.
The unique plastic package design provides not only ease of
mounting but also low terminal impedance, which allows
operation at high case temperatures and permits reduced
heatsink size.
Formerly RCA Dev.Nos.TA8504 and TA8505.
Values:
For Operation with Sinusoidal Supply Voltage at Frequencies up to 50160 Hz and with Resistive or Inductive Load,
REPETITIVE PEAK OFF-STATEVOLTAGE:

Gateopen,TJ = -65 to 100C
RMSONSTATECURRENT IConductionangle= 360)
VDROM
Case temperature
T2500B
200
T2500D
400
ITI R~.1Sl
TC=800C
6----
--
See Fig. 3 ---
PEAK SURGEINON-REPETITlVE)ON-STATECURRENT:
For one cycle of applied principal voltage
60 Hz (sinusoidal).
50 Hz (sinusoidal)
For more than one cycle of applied principal voltage
___
60
___
50
--
See Fig. 4 ---
PEAK GATETRIGGERCURRENT:
For 10 IJ.smax; see Fig. 10
GATE POWERDISSIPATION:
Peak (For 1
JjS
max.,lGTM
PGM
-:;4 A; see Fig. 10)
AVERAGE
16
PGIAV)---
02
_
_
TEMPERATURERANGE:'
Tstg
Storage
Operating
TC
(Casel
TERMINAL TEMPERATUREIDuring solderingl:

For 10 s max. (terminals and case)
For either polarity of main terminal 2 voltage (VMT2)
For either polarity of gate voltage
.. For temperature
(V G)
measurement reference

poif't,
se~
Dimensional
Outline.
1.
-65
to 150 __
-65 to 100 __
ELECTRICAL
CHARACTERISTICS
indicated Case Temperatll'e
(T cl
at Maximum
Ratings
unless otherwise
specified,
and at
LIMITS
T2500B
SYMBOL
CHARACTERISTIC
UNITS
T2500D
MIN. TYP. MAX. MIN. TYP. MAX.

Peak Off-State Current:*
Gate Open, VOROM = Max. rated value
At TJ
100C
IOROM
0.1
0.1
mA
vTM
1.7
1.7
15
15
30
.............................
Maximum On-State Voltage:*

For iT = 30 A (peak) and TC
25 C ...............
DC Holding Current:*
Gate Open
Initial principal current = 150 mA (de)
At TC = 25C ...........................
For other case temperatures ...................
mA
IHO
30
See Fig. 8.
Critical Rate of Rise of Commutation Voltage:*

For vO = VOROM. IT(RMS) = 6 A. Commutating
dildt = 3.2 Alms. and gate unenergized
At TC = BOoC ..............................
V!/-,s
dv!dt
4
Critical Rate of Rise of Off-State Voltage:*

For vd = VDROM exponential voltage rise, and gate open
At T C = 10006 ...........................
For other case temperatures ....................
DC Gate Trigger Current:* t
For VD = 12V (de), RL = 12 \)
T C = 25C, and specified triggering mode:
r+ Mode (VMT2 positive, VG positive) ...............
m- Mode (VMT2 negative, VG negative) ............
V!/-,s
mA
10
15
25
25
20
20
60
30
30
60
See Figs. 12 and 13_
60
60
- 1.25
2.5
See Fig. 14.
2.5
25
25
1.25
0.2
1.6
2.5
1.6
2.5
/-,s
ROJC
C!W
60
2.7
2.7
ROJA
60
C!W
0.2
Time):
tgt
Thermal Resistance:
.............................
J unction-to-Case
,
......
*FOl either polarity of main terminal 2 voltage (VMT2) with reference to main terminal
tFor either polarity of gate voltage (VG) with reference to main terminal 1.
.Variants
special
10
15
VGT
ForvO = VOROM,IGT = 160 mA, rise

time = 0.1 IJS, and iT = lOA (peak)
At TC = 250C (See Fig.15.l ...................
J uncti onto-Ambi ent ....................
250
+ Rise
- 75
See Fig.9
IGT
.......................
Turn-On Time (Oelav Time
300
For VD = VDROM and RL = 125 \)

At TC = 100C ............................
Gate-Controlled
10
100
DC Gate Trigger Voltage:* t

For VD = 12V (de) and RL = 1211
At TC = 25C ............................
F or other case temperatures .....................
dv!dt
I - Mode (VMT2 positive, VG negative) ..............

m+ Mode (VMT2 negative, VG positive) ............
10
1.
of these devices having dV/dt characteristics

selected specifically
for inductive loads are available
order; for additional
information,
contact your ReA Representative
or your ReA Distributor.
on

LOAD: RESISTIVE OR INDUCTIVE
CONDUCTION
ANGLE:
360
CASE TEMPERATURE:
MEASURED AS
SHOWN ON DIMENSIONAL
OUTLINE
FULL-CYCLE
RMS ON-STATE
10
CURRENT
[I
12
14
T{RMSJ-A
92C5-20960
-'"
w 1100
>-
SUPPLY FREQuENCY: 50/60 Hz SINE WAVE

LOAD: RESISTIVE
CASE TEMPERATURE
(TCl : 800 C
[ITIRMSlr
~6 A
LTE CUTROL I
f:........~
MAy
~ ~ 60
_u
4
RMS ON-STATE
8
CURRENT
to
12
[IT(RMS~-A
92C5-20961
B~
Lbs+
DURING AND IMMEDIATELY

FOLLOWING SURGE CURRENT
INTERVAL
CNERLOAD MAY NOT BE REPEATED UNTIL JUNCTION
TEMPERATURE
HAS RETURNED
TO STEADY-STATE
RATED VALUE.
~ ~ 80
w ...
<rZ
,W
z<r
.,w ....w
~~Iy,
<r '"
~ ~40
~ z
'" '"
_50",~
~O
20
--
:-
0
2
Fig. 4-Peak surge on-state current vs. surge current duration.

tgt:
td + t.
I
Vo
I
I
o-LL---J---t:
ITM
I
I
:1.
1
POINT
I-l---
o-l~---
j--'d+t--
I
I
!
I
I
I
I
I
I
....
90%
I
t,
~t
----i
-.--t-7
I
CO~UT ATING
dv/dt
VGT
0-
:
I :.--10%
POINT
--------
Fig. 6-0scillascape display for measurement of gate--contralled

turn-on time rtgrl.
o
POSITIVE
0.5
1.5
2.5
OR NEGATIVE INSTANTANEOUS ON-STATE
VOLTAGE
(vT)-V
92CS-15021RI
2
0.1
4
6 80.01
POSITIVE
6 80.1
OR NEGATIVE
DC GATE-TRIGGER
81.0
CURRENT
(lGT)-A
92SS-3785R2
RFI FILTER
r------l
I
I
I
I
I
1.$:
LF
-RCA
TRIAC
(SEE
TABLE)
CF
2W
R, Cf'
112 W
"
FOR PHOTOCELL CONTROL

TO TERMINALS A AND B,
RESPECTIVELY
Cs
B'
PHOTOCELL
~?~i;~~!~~TL~SO~O~~~
0, RESPECTIVELY
,1
0
120v
" 0, 0, ", ",

lOOK" 11KlI
0.1
,~"
~", ~" ~~~:
J.JKll
:1&1","
1 ~F
~~:o"""
"'"
~"'
:100"'11 JJKlI
,~" 0,~" 0.1
,~"
INPUT
VOLTAGt
~f
,W
~f
~"'
~f
, W
", ~'~
""
(,~". (,~". TVPE$
15K"
l00~H
15",U
~."
~."
,W
'5",U
,W
0,
~f
~"
,-
,~
~~~:
~~:,~
Fig. 11 - Typical phase-control circuit for lamp dimming, heat

controls, and universal motor speed controls.
240V
Fig. 12-DC gate-trigger current ((or

modes) vs. case temperature.
,+ and 11/- triggering
Fig. 13-DC gate-trigger current ((or /- and ///+ triggering

modes) vs. temperature.
-'>
;il
,,-;:.
<r c>
~>
z~
0:0:
~~
~g
w
g
'50
100
DC GATE-TRIGGER
1'50
200
2'50
CURRENT
IIGT)-mA
3'50
92CS-17062
i-
Fig. 15-Typica/ turn-on time vs. gate-triggercurrenr.

SCREW,632
NO'
..
V ..'L ...
SLEfRQt.ORC ...
~NR231A
RECTANGULAR
METAL
WASHER
::::;.::~::~,;~"'""
.
~
DF103B
Q
0-
~~CL~I~I~U:~T~~O'141,n
~~~';~~';:':~V'CE
(~~:~S~~7K
6>
4953347
INSULATING
S--
METAL
WASHER
LOCK
~~~~:~'~'~?~E:~~
MAX.
WASHER
HEX NUT
SOLDER
BUSHING
~~O~~6~'~I~.OOmml
@
..ffl)
LUG
~
HEX NUT
NOT
..V...
'L ...
SLEfRQMRC...
92'C$-22563
In the United Kingdom, Europe, MIddle East, and Africa, mounting'

hardware policies may dIffer, check the availabilIty of all Items
shown with your ReA salesrepresentative or supplier
DIMENSIONAL OUTLINE
JEDEC TO-220AB
INCHES
CHAMPFER
SEATlNGPlANE
MAX.
MILLIMETERS
MIN.
MAX.
407
064
03'
0.51
'/'
II
F
MIN.
SYMBOL
~L==OPTIONAL
TEMPERATURE
MEASUREMENT
POINT
0.160
h
h,
h2
0025
00'2
0,045
0.575
0.395
0365
0300
0.180
0.080
0020
0235
0.500
E
E,
E2
,
"
F
L
L1
0.250
Lead No.1-Main
Terminal 1
Terminal 2
ReA
incorporating
recommended
ReA
Solid
from
ReA
that
State
Solid
the
Solid
designer
Devices",
State
DiVision,
State
refer
Form
60x
Devices
In
to "Operating
No.1
3200.
CE-402,
4.57
2.03
051
5.97
'2.70
0.141
0,145
3.582
0.060
0120
2.54
equipment,
It
Considerations
available
Somerville.
10.04
928
7.62
0.040
0.100
Mounting Flange-Main Terminal 2
N.J.
on
IS
for
request
08876.
1397
15.24
10.41
oP
Lead No.3-Gate
When
1143
4.82
1.02
14.61
D
Z
Lead No.2-Main
0190
0040
0020
0055
0600
0410
0.385
0.320
0.220
0.'20
0.055
0265
1.02
9.77
8'2
5.58
304
1.39
6.73
635
3.683
1.52
3.04
Thyristors
2N5441 2N5442 2N5443
2N5444 2N5445 2N5446
T6400 T6410 T6420 Series
OOill5LlD
Solid State
Division

2N5441, 2N5444, T6420B (40688)t
2N5442, 2N5445, T6420D (40689)t
For High-Voltage Operation .. 2N5443, 2N5446, T6420M (40690)t
T6400N,T6410N,T6420N
(40925, 40926, 40927)t
Main
Main
Terminal 2
2N5444
Terminal 2
2N5441
2N5442
2N5443
T6400N
Press-fit
Series
Isolated-Stud
Stud
ReA
triacs
They
are designed
Features:
Main
Terminal 2
T6420
2N5445
2N5446
T6410N
are gate-controlled,
to switch
full-wave
from
dildt Capability
Shorted-Emitter,
Low Switching
silicon
an off-state
= 100 Alps
Center-Gate
for either
ac switches.
Values:
For Operation with Sinusoidal Supply Voltage at Frequencies
up to 50160 Hz and with Resistive or Inductive Load.
PEAK OFFSTATE
................
70"C IPress-fit types) ..................

= 65C IStud tYpes)
== 60C (Isolated-stud
types)
.
.
.
PEAK SURGE INON-REPETITIVE)
ON-STATE
50 Hz (sinusoidal)
RATE OF CHANGE OF ON-STATE
GATE-TRIGGER
For 1
"GATE
JlS
or negative
2N5441
2N5442
2N5443
T6400N
2N5444
2N5445
2N5446
T6410N
T6420B
T6420D
T6420M
T6420N
400
600
800
40
40
40
See Fig. 3
A
A
300
A
A
265
See Fig. 4
CURRENT:
= 200 mA, tr
= 0.1, ISee Fig.
FUSING CURRENT (for Triac Protection):

TJ = -65 to 110C. t = 1.25 to 10 ms .........
"PEAK
with positive
CURRENT:

60 Hz (sinusoidal)
= VOROM,IGT
voltage
angle = 360"):
VOM
of applied
voltages.
VOLTAGE:
Gate open, TJ =-65 to 110"C

RMS ONSTATE CURRENT (Conduction
Case temperature
TC
polarity
gatetriggering
to an onstate
Low On-State Voltage at

High Current Levels
Losses
MAXIMUM
"REPETITIVE
Design
100
AI/,s
350
A2s
CURRENT:
max., See Fig. 7
12
40
W
W
POWER DISSIPATION:
PEAK IFor 10/,s max .. IGTM<;; 4 A, See Fig. 7) ............

AVERAGE
...
. ...............
"TEMPERATURE
RANGE:~
Storage
Operating
"TERMINAL
0.75
(Case)
TEMPERATURE
65 to 150
65 to 110
C
C
lOuring soldering):
For 105 max. (terminals and casel
225
At Maximum Ratings Unless Otherwise
Specified and at Indicated
Case Temperature
(T C)
LIMITS
SYMBOL
CHARACTERISTIC
Peak OffState Current:'

Gate open, T J = 110C, VDROM
= Max. rated value.
Maximum
OnState Voltage:'
For iT = 100 A (peak), TC = 25C
For iT = 56 A (peak), T C = 25C
Gate open, Initial principal current
TC = 25C
TC = -65C.
FOR ALL TYPES

UNLESS OTHERWISE
SPECIFIEO
....... ....... . ...

........
....
UNITS
MIN.
TYP.
MAX.
IDROM
0.2
4"
VTM
1.7
1.5
2
1.85"
IHO
mA
= 500 mA (del, vD = 12V,
....
60
100"
mA
See Fig. 6
Critical Rate of Rise of Commutation

For Vo
di/dt
TC
=
=
=
=
=
Voltage:'
VDROM' 'TIRMSI = 40 A, commutating
22 A/ms. gate unenergized.
(See Fig. 141,
70C (Press-fit types)
....................
6SoC (Stud types)
.....................
6CtC (Isolated-stud types) ............
25
dv/dt
.. ...
Critical Rate of Rise of Off-State Voltage:'

For Vo = VOROM' exponential voltage rise, gate open.
TC = 110C'
2NS441, 2NS444, T6420B
2NS442. 2NS44S. T6420D ..
2NS443, 2NS446. T6420M
T6400N. T6410N, T6420N .
DC Gate-Trigger Current:'
For vQ = 12 V (del
RL = 30n
TC = 25C
Mode
1+
VMT2
positive
negative
positive
negative
IW
1-
111+
dv/dt
VG
positive
negative
negative
5"
5"
5
30
30
30
50"
30"
20"
10
200
15
20
30
40
50
50
80
80
For
Vo =
=
=
RL
TC
Mode
1+
VMT2
positive
negative
positive
negative
IW
,-
111+
V/~s
mA
IGT
12 V (del
30n
-65C
v/p.s
'50
100
75
positive
VG
positive
negative
negative
positive
125"
125"
240'
240"
See Figs. 8& 9
......
DC Gate-Trigger Voltage:'
For Vo = 12 V (del, RL = 30 n,
TC = 25C ............................
= _65C
...............
For Vo = VDROM' RL = 12Sn.TC
= lHt'C
......
VGT
1.35
1.8
2.5
3.4"
See Fig. 10
0.2
tgt
1.7
ROJC
Gate-Controlled Turn-On Time:

(Delay Time + Rise Time)
For
iT
Vo = VDROM' IGT = 200 mA, tr = 0.1 jJ.S,

= 60 A (peak). T C = 2SoC (See Figs. 11 & 151 . . . . . . .
Thermal Resistance, Junction-ta-Case:

Steady-State
Press-fit types
...................
Stud types ........
..............
Isolated--stud types ..
.
Transient (Press-fit & stud types)
.. . ......
.....
.. .......
........ ...... .....
In accordance with JEDEC registration

of main terminal
data format
See Fig. 12.

(JS-14, RDF 2) filed for the JEDEC (2N-Series) types .
For either polarity
2 voltage (VMT2)
For either polarity of gate voltage (V G) with reference to main terminal
with
reference to main terminal
1.
1.
0.8"
O.g"
1
~s
C/W
~
I
~
~
QUADRANT
NO'
MAIN TERMINAL 2
POSITIVE
ON
STATE
rHO
,~
<5
<r
~
:?
QUADRANT
00111
MAIN TERMINAL
NEGATIVE
ON
STATE
'""<r
w
_I
10
"
()
FULL -CYCLE
20
30
RMS ON-STATE
40
~O
60
CURRENT(IHRMS1]-A
92LS-2256RI
CURRENT WAVEFORM:
SINUSOIDAL
LOAO:
RESISTIVE
OR INDUCTIVE
~~~~UC;~~~ER~~~~~:
~M~~~~REO AS
OUTLINES
:GATE CONTROL MAY BE LOST

FOLLOWING
SURGE CURRENT INTERVAL.
110
OVERLOAD MAY NOT BE REPEATED

UNTIL JUNCTtON
TEMPERATURE
HAS
RETURNED TO STEADY-STATE
RATED VALUE.
10"
SURGE CURRENT DURATION -FULL
6.
102
CYCLES
':~i:....
;,: i.~t~i~;_
~
'!~
...... _ .. "' .. ;:;-. ;
.. Z-'L
.. .;; .. ;;;
20;: . ;.;/;
'
=t:':"
._ .. ,._
~: ::--:::
.:::1?':
... :: ;-":. .:.. :::::'::
'I
[.
I
2
3
INSTANTANEOUS ON- STATE VOLTAGE tVTI - V
tPOSITtVE OR NEGATIVE}
92LS-22~A2
20
-10 -60 -50-40 -30 -20 -10 0
10 20
CASE TEMPERATURE
(TC )_C
30
40
MINIMUM
GATE RESISTANCE
t I I
I
I
UPPER LIMIT
OF PERMISSIBLE
AVERAGE
lOCl
GATE POWER
'
DISSIPATION
AT RATED
CONDITIONS
Fig.7-Gate-trigger
characteristics
and limit-
ing conditions for determination

permissable
gate-trigger
of
pulses.
o
-70 -60 -50 -40 -30 -20 -10
to
20
30
40
-70 -60 -50 -40 -30 -20 -10
CASE TEMPERATURE tTe }_C
~
;!
~~
,-'
,."
Iii
~~
./
0-'-'
z,
"'0
'-'0-
40
~~
"0
DC GATE-TRIGGER
250
CURRENT
300
llGT1-mA
40
350
I--'
II
111
,
I
I
I 1"
II
468
10-2
APPLICATION
; I
468
AFTER
I
"
:1
I
20
10-3
TIME
I i I
!J- 1"
/
71
V,
'1'
0
200
30
iA
60
~'"
0:11
150
20
80
0,"
100
10
Dlj
III
'00
"'~
50
CASE TEMPERATURE ITC I-C
OF RECTANGULAR
10-1
468
POWER PULSE -
SECONDS
92LS-2263A1
Vo
oJ--------------- --
32C517063
on-state current
Fig. 13-Rate of change of
with time (defining dildtl.
Fig. 14-Relationship
I
Vo
between supply vOltage
and principal current (inductive

load) showing reference points for
definition
of commutating voltage
fdv/d'i.
o-LL----:---I
I
I
1
I
j:
ITM
iLl.
I I' 90%
trigger
points
POINT
0-1.~--:--
td
time
I-l---
--t-+--
between
rage, on-state
off-state vol-
current. and gate-
voltage showing reference

for definition
of rum-on
(fgt).
I,
~tot---i
-,--t-;
I
VGT
0-
:
t ,..-100/0
AC INPUT
VOLTAGE
POINT
- --------
C,
'32LS-2410R2
C,
Rt
TRIAC
(SEE
TABLE)I
I
I
,
,
,
R,
240V
50Hz
O.ljJF
O.ljJF
'OOV
400V
400V
O.l..,F
O.lIJF
lOQV
tOOV
lOCV
100KU
200KIl
tW
250Kn
3.JKf!
tf2W
3.3K11
tf2W
22KH
'f2W
R3
RS
15KH
SNUBBER
I
,
240V
60Hz
O.ljJF
tf2W
,
RCA
120V
60Hz
NETWORK
Cs
FOR
Cs
40-A
(RMSI-IN
Lf_-..J
SNUBBER
LOADS
ldv/dlJ
L
NETWO~j(
OR WHEN
DUCTIVE
J
I'OR
LOAD
RFI
INDUCTIVE
COMMUTATING
CHARACTERISTIC
RS
VOLTAGE
CF
15KH
O.lj.jF
'w
15KH
1/ZW
'f2W
tf2W
0.18
O.22).JF
'OOV
O.lSO.22j.lF
400V
330
330
tf2W
330
390"
lf2W
O.lIJF
O.lIJF
O.lIJF
'OOV
400V
400V
390H
0.18
O.22jJF
400V
390U
tf2W
FILTER
IF
15 EXCEEDED.
RCA
TRIACS
100J,lH
200J,lH
200IJH
2N5441
2N5442
2N5442
2N5444
2N5445
2N5445
T6420B
T64200
T64100
MOUNTING
CONSIDERATIONS
Mounting of press-fit package types depends upon an interference fit between the thyristor case and the heat sink. As
guide the press-fit package properly into the heat sink. The
the thyristor
diameter of 0.380 0.010 in. (9.65 0.254 mm) and an
is forced into the heat-sink hole, metal from
the heat sink flows into the knurl voids of the thyristor
case.
insertion
tool
should be a hollow
shaft having an inner
outer diameter of 0.500 in. (12.70 mm). These dimensions
The resulting close contact between the heat sink and the
provide sufficient clearance for the leads and assure that no
thyristor
direct force will be applied to the glass seal of the thyristor.
case assures low thermal and electrical resistances.
A recommended mounting method, shown in Fig. 17, shows

press-fit knurl and heat-sink hole dimensions. If these dimen-
The press-fit package is not restricted to a single mounting
sions are maintained, a "worst-case" cond it ion of 0.0085 in
have been successfully employed. The press-fit case is tin-
(0.2159 mm) interference fit
plated to facilitate direct soldering to the heat sink. A 6040
will
allow press-fit insertion
arrangement; direct soldering and the use of epoxy adhesives
below the maximum allowable insertion force of 800 pounds.
solder should be used and heat should be applied only long
A slight chamfer in the heat-sink hole will help center and
enough to allow the solder to flow freely.
In the United Kingdom, Europe, Middle East, and Africa, mountinghardware policies may differ; check the availability of all items
shown with your ReA sales representative or supplier.
Type of Mounting
Employed
Package
Thermal
Resistance-oeM
Press-fitted into heat sink. Minimum required thickness of heat

sink = t/8 in 13.17 mml
Press-Fit
Soldered directly to heat sink.

(6040 solder which has a melting point of 1880 C should be
used.
Heatin~ time should be
sufficient to cause solder to flow
freely).
Directly
Stud
0.5
mounted
on heat sink
with or without the use of heatsink compound.
0.1 to 0.35
0.6
DIMENSIONAL
OUTLINE
FOR TYPES
INCHES
2N5441, 2N5442, 2N5443, T6400N
NOTES
PRESS-FIT
INSULATING
MATERIAL
TERMINAL
NO.1
REFERENCE
POINT FOR CASE
TEMPERATURE
MEASUREMENT
A
<l>D
<l>D1
<l>D2
TERMINAL NO.3
@\
.0
MAX.
0.380
0.510
0.505
0.475
1.000
0.225
0.068
0.148
0.465
0.825
0.215
0.058
0.138
M
<l>T
<l>T,
l.--
MIN.
0.501
TERMINAL
MI LLiMETERS
SYMBOL
MIN.
MAX.
9.65
12.95
12.83
12.07
25.40
5.71
1.73
3.75
12.73
11.81
20.95
5.46
1.47
3.51
NOTES:
1. Contour
NO.2
and angular orientation
of these terminals is optional.
2. Outer diameter of knurled surface.
DIMENSIONAL
OUTLINE
FOR TYPES
INCHES
2N5444, 2N5445, 2N5446, T641 ON
NOTES
STUD
A
<l>D1
E
F
E
TERMINAL NO.2
REFERENCE
POINT FOR CASE
TEMPERATURE
MEASUREMENT
J'"
SEATING PLANE
MIN.
MAX.
MIN.
MAX.
0.330
0.505
0.544
0.562
0.200
1.100
0.225
0.453
0.068
0.148
UNF2A
8.4
1.47
12.8
13.81
14.28
5.08
27.94
5.71
11.50
1.73
3.51
Y.28
3.75
UNF-2A
0.544
0.113
0.950
0.215
0.422
0.058
0.138
.0,
MI LLiMETERS
SYMBOL
M
N
<l>T
<l>T,
W
%-28
13.82
2.87
24.13
5.46
10.72
NOTES:
1. Contour
of these terminals
is optional.
2. Pitch diameter of \428 UNF-2A (coated) threads (ASA B 1. 1-1960).

3.
chamfer
or
undercut
on
one
or
both
ends
of
hexagonal
pOrtion
is optional.
DIMENSIONAL
OUTLINE
FOR
INCHES
T6420 SERIES
MILLIMETERS
NOTES
SYMBOL
MIN.
ISO LATED-STUD
A
<l>D
<l>D1
E
F
J
M
M,
N
<l>T
<l>T1
<l>T2
<l>W
0.604
0.501
0.551
0.100
0.210
0.200
0.422
0.058
0.138
0.138
%-28
MAX.
0.673
0.614
.0.505
0.557
0.110
1.298
0.230
0.210
0.452
0.068
0.148
0.148
UNF2A
MIN.
MAX.
17.09
15.59
12.82
14.14
2.79
32.96
5.84
5.33
15.34
12.72
13.99
2.54
5.33
5.08
10.72
1.47
3.51
3.51
%-28
11.48
1.73
3.75
3.75
UNF2A
2
2
2
3
NOTES:
1. Ceramic between hex (stud) and terminal No.3
2. Contour
is beryllium oxide.
3. Pitch diameter of %28 UNF2A (coated) threads (ASA B 1. 1-1960).
NO.1-Gate
No.2-Main
Case, NO.3-Main
Terminal 1
Terminal 2
OOm5LlD
Solid State
Division
T2710
Series
RCA T2700- and T2710-series

devices are gate-controlled
full-wave
silicon triacs. They are intended for the control of
ac
loads
in applications
controls,
These
such
light dimmers,
triacs
as heating
controls,
and power switching
are designed
to switch
from
systems.
an off-state
on-state
condition
for either
polarity
of applied
positive
or negative
triggering
voltages
to the gate.
T2700B
and T2700D
on-state
current
rating
are hermetically
+75C and repetitive

off-state
and 400 volts, respectively.
to an
voltage
sealed types
of 6 amperes
motor
with
ratings
Medium-Power, Gate-Controlled,
Full-Wave Types
'.
/'
having an
voltage
6-Ampere Silicon Triacs
of 200
"
of
volts
-H-1470A
JEDEC
TQ-66
With Integral Heat Radiator

These devices are also available with
as T2710B and T2710D, respectively.
integral
heat
radiators,
T2710 Series
Features
Maximum
Ratings,
Absolute-Maximum
Values:
nO-Watt
For Oprratioll
with Sinusoidal
Supply
Voltage at Freqll(,~lcies of 50/fjO Hz. and 1(,;tll Rcsistirc or lndllctirc
Load
120-Volt
Control
T2700B
(40429)*
Line
T2710B
(40502)*
T2700D
(40430)*
T2710D
(40503)*
1,440-Watt
240-Volt
REPETITIVE
VOLTAGE.,
PEAK OFF-STATE
VDROM:
100-A
Gate Open,
ForTJ=-65to+1000C
RMS ON-STATE
200
CURRENT,
Operation
On-State
Peak
Surge
Shorted-Emitter
-- contains
IHrms):
Main
For case temperature (Tel of +75 C ..

and a conduction angle of 3600 .....
Center
internally
Gate
faster

ON-STATE CURRENT, 'TSM:
Current
Ratings
Full-Cycle
Current
Ratings
Design
Terminal
diffused
resistor
from gate
to
No.1.
Construction
-- provides
For ambient temperatures (T A) up to

+ 100C and a conduction angle of 360
For one cycle of applied

principal voltage
Control
Line
6-A (rms)
Operation
rapid
turn-on
uniform
with
gate
current
substantially
spreading
reduced
for
heating
effects
Low Switching
Losses
Low Thermal
Resistance
Numbers
in parentheses
(e.g. 40429) are former
ReA type numbers.
For more than one full cycle of

applied
voltage.
. . . . . . . . . . . . . . ..
PEAK GATE-TRIGGER
CURRENT
See Fig.
,'Gnt'
For 1 }.L s max.
GATE POWER DISSIPATION:.

PEAK, P
For 1 f.L s max. and
GM 'GTM f, 4 A (peak),
AVERAGE,
16
PG(AV) ....
TEMPERATURE
Storage
Operating
(case)
RANGE+:
.
-65 to + 150C
-65 to + 100
'~~~r~i~g~\go~~\i~Yt~:mTna~r
{~rminal 2 voltage
.For
4.
(VMT2) with
either. polarity of gate voltage(VGT) with reference

maIn termmal 1.
to
.For information on the reference

menl, see Dimensional Gutl ine.
point of temperature
me8sure-
CHARACTERISTIC
Peak Off-State Current:"
Gate Open
At TJ + 1000C and VoROM
SYMBOL
Max. rated value
LIMITS
T27100
T2700B
T27000
T2710B
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
UNITS
10ROM
0.1
0.1
1.2
0.2
0.2
1.2
mA
vTM
1.8
2.25
1.8
2.25
1.8
2.25
1.8
2.25
IHO
..
15
30
15
15
30
15
30
Maximum On-State Voltage:"
= 30A (peak)
For iT
and T C
+ 25 c
................
DC Holding Current"
Gate Open
Initial principal current 150mA (DC)
At T C = + 25 C ........
For other case temperatures .
Critical
30
See Fig. 8.
Rate of Rise of Commutation Voltage:-.
For Vo
di/dt
= VoROM,
I~rms)' 6 A, commutating
3.2 Alms, and gate unenergized
3
10
10
I~rms) and T A specified by

curve A of Fig. 16......
10
10
I~rms) and T A specified by

curve B of Fig. 16 ..................
12
- -
12
dv/dt
30
150
30
150
20
100
20
100
IGT
15
25
25
25
25
40
25
40
25
40
25
40
25
15
15
25
15
15
At T C + 75 c ......
Critical
mA
dv/dt
V/J.LS
Rate of Rise of Off-State Voltage:-
For Vo VoROM' exponential voltage rise, and gate open

At T C = + 100 c
DC Gate-Trigger Current"!
For Vo 12 volts (DC), RL = 12 (1
TC' +250C, and specified triggering mooe:
1+ Mode: positive VMT2' positive VGT .........
111-Mode: negative VMT2' negative VGT ......
1- Mode: positive VMT2' negative VGT ........
..
111+Mode: negative VMT2' positive VGT ....

For other case temperatures ..........
15
25
15
25
25
40
25
40
15
25
25
40
25
40
V/J.Ls
mA
See Fig. 12 & 13.
DC Gate-Trigger Voltage:-!
For Vo 12 volts (DC) and RL 120
At T C + 25 c ...
For other case temperatures .........
For Vo VoROM and RL
At T C + 100 c
-1112.21-11
VGT
125 (1
...........
12.21-1
1 12.2
1 12.21-1
See Fig. 14.
0.2
0.2
-'
0.2
0.2
2.2
2.2
2.2
2.2
- -

For Vo'
VoROM and IGT '80mA,
0.1 J.LS rise time, and iT IDA (peak)
tgl
J.Ls
At TC +25 c
Thermal Resistance:
Junction-to-Case (Steady-State) .
Junction-to-Case (Transient)
Junction-to-Ambient ....
BJ-C
BJ-A
-- I -
-For either polarity of main terminal 2 voltage (VMT2) with feference to main terminal 1.
tFOT either polarity of gate voltage (VGT) with Tefetence to main terminal l.
'Variants of these devices having dv/dt characteristics selected specifically for
inductive loads are available on special order; for additional information, contact
your ReA Representative 01 your ReA Distributor.
I- I
See Fig. 15.

See Fig. 16.
I - I - I - I See Fig.
16.
C/W
CURRENT WAVEFORM
LOAD:
RESISTIVE
CONDUCTION
ANGLE
'"
CURRENT
WAVEFORM;
SINUSOIDAL
LOAD: RESISTIVE
OR INDUCTIVE'
CONDUCTION ANGLE:
I
I
1
360
..
::l
..
u~
110
u
00>-
100
I
I
I
...<D-I
....
.....
.. "
"- ....
....
COMt.tUT ATING
dv/dt
0-
90
>2
2"
X 2
2>-
80
70
345
RMS ON-STATE
Eg~ri~~:S~~~K,EENCY:
100
~
AMPERES
50/60
CASE TEMPERATURE
(TC1:
RMS ON-STATE
AMPERES
Hz SINE
E ~"
~g~~O~,~~D
60
~ ~
IIIIII1
MAY ~E
II,
LO~i-
~~~~~I~~~~1NT
H,z,
I ..... 1/
r-- ....~
RATED
t... 60
UJ
I 1 III1
~TEE:L6AA\; MAY NOT 8E REPEATED UNTIL JUNCTION

TEMPERATURE
HAS RETURNED
TO STEADY-STATE
~ ~
~ ~
WAVE
GATE C~~~'ROL
~ ;80
,J
t (rms
+ 75C
[I t (rms lJ '"6
""
UJ V>
[..1
VALUE.
50 Hzr:>
~ ~40
"''?
" z
~ 0
20
468
SURGE
10
CURRENT
468
100
DURATION-FULL
Fig.
468
1000
CYCLES
92$$-3782
6-
Oscilloscope display for measurement of gate-controlled

turn-on time (tgt).
UPPER LIMIT OF PERMISSIBLE

AVERAGE
I DC) GATE
POWER
DISSIPATION
AT RATED
CONDITIONS
(SEE
FIG. 12.
13
14)
20
40
60
DC GATE-TRIGGER
80
100
MILLIAMPERES
120
140
160
I1GTI
6 80.01
POSITIVE
RFI
OR NEGATIVE
80.1
DC GATE-TRIGGER
81.0
AMPERESUGTI
9255-3785
FILTER
r------l
-ReA
TRIAC
(SEE
TABLE)
I
I
I
I
LF
,
$
o
1.2K
"
PHOTOCELL
RFI FILTER
AC
INPUT
VOLTAGE
C,
C,
R,
R,
R3
120V
60Hz
O.lpF
200V
O.lpF
IOOV
IOOKn
1/2W
IKn
112W
O.05pF
400V
O.lpF
IOOV
200Kn
1/2W
7.5Kn
2W
FOR INDUCTIVE LOADS

CONNECT POINTS c' AND
7k~cf'
2w
FOR PHOTOCELL
CONTROL
CONNECT P'OINTS A' AND B'
TO TERMINALS A AND 8,
RESPECTIVELY
B'
240V
50/60Hz
CF
0' TO TERMINALS
0, RESPECTIVELY
I
0'
C AND
O.O~eF
200V
40fN
. FOR
FOR
120V
24DV
INPUT
INPUT
RCA
TYPES
L,'
(lyp.)
C,'
(lyp.)
15Kn
1/2W
IOOpH
O.lpF
200V
T2700B
T2710B
7.5Kn
2W
IOOpH
O.lpF
400V
T2700D
T2710D
Fig. 11 -
Typical phase-control circuit for lamp

dimming, heat controls, and universal
motor speed controls.
PRINCIPAL
DC VOLTS - 12
lOAD
12 Q, RESISTIVE
TRIGGERING
MODES:
I-ANDU]
-;.
..
125
'"'"
ffi
125
100
""j
100
..
II:
'"
::J
..J
...
0:
co 75
co
75
'"
co
co
ii 50
>-
~(fAf
i<
>-
'">-
'"~
co 25
50
TYPIC~"t
" 25
co
u
0
0
-50
CASE
Fig. 12 -
>.-3
!
'"
!:i
g
-
-25
TEMPERA7URE
0
ITC)-
"C
DC gate-trigger current (for /+ and 11/- triggering

modes) If.S". case temperature.
PRINCIPAL
DC VOLTS
LOAD -12n,
RESISTIVE
TRIGGERING
MODES:
12
All
i
A!AX/AlUA!
...
Z
;!
...>-'"
:!~
"'-,
I"
'"
~2
~~
"'I
"
;;
,,-"'
1;;>-
..J
Z
TYPICAL
0:
>-
'"
Z
-
I
I
100
~5
zl
~~
~~
60
60
/
4
O:z
Ii
"l
..-
I
I
"co
468
0-3
TIME
AFTER
68
10-Z
468
10-1
APPLICATION OF RECTANGULAR POWER PULSE -SECONDS

9ZLS-Z407RI,
FOR T2710 SERIES

JEDEC TO66 WITH HEAT-RADIATOR
Dimensions
in Inches
and
Millimeters
NOTE: Dimensions in parentheses are in millimeters

derived [rom the basic inch dimensions as indicated.
and are
Note 1: Measured at bottom of heat-radiator.

Note 2: 0.035 in. (.889) C.R.S . tin plated.
Note 3: Recommended hole size for printed-circuit
0.070 in. 0.778) dia.
TERMINAL
board is
DIAGRAM
FOR T2700 AND T2710 SERIES
Pin I - Gate
Pin 2 - Main Terminal
Flange, Case - Main Terminal 2
Case, Flange (T2700 Series) _ Main Terminal 2
Case, Flange, Heat Radiator (T27l 0 Series)
DIMENSIONAL
OUTLINE
FOR T2700 SERIES
SUGGESTED MOUNTING
JEDEC TO-66
F1l
ARRANGEMENT
FOR T2700SERIES
SEATING
~'HE
rn=~
2 SCREWS, 6 32
~-"OTAVAILADLEFROMRCA
e
DF31A
MICA
INSULATOR
SUPPL'EDW,lHOEVICE
~CEHA:si:~,K
Ql
SYMBOL
.,
INCHES
MIN.
MAX.
MILLIMETERS
.250
.340
6.35
.028
.034
"1
'I
F
'"
NOTES
MAX.
8.64
.711
.620
"0
Fl
L
MIN.
.863
15.75
2METAl
.470
.190
.SOO
i1.94
12.70
.210
4.83
5.33
.093
.107
.G7,)
2.36
1.27
2.72
1.91
1.27
,050
.050
.360
.142
.152
.958
.962
.]50
'1
'2
.570
9.14
],61
24.)]
.145
.590
14.48
2.
DIMENSION
CONTOUR
WASHERS
SHOULDER
THICKNESS
0050 on !I 27 mm) MAX
'1S0l0ERLUG~
2HEXNUTS@>
3.68
14.99
IS OPTIONAL
WITHIN
ZONE
<1>0 AND Fl-
DOES NOT INCLUDE
SEALING
FLANGES.
INSULATING
1.D.~O.156on,14.00mml
SHOULDER
CIA, =
In. (640 mm)
0250
3.86
24.43
8.89
'1 NYLON
-::...
2HEX NUTS@>
NOTES,
1. THE OUTLINE
OEFINED
BY
WASHERS
2 LOCK
495334-7
BUSHINGS
OO(]5LJ[]
Solid State
Division

Power-Control and Power-Switching Applications
For 120- V Line Operation - T2800B (40668) *
For 240-V Line Operation - T2800D (40669)*
For High-Voltage Operation - T2800M (40670)*
Features:
RCA - T2800B,
controlled
with
three
boards.
T2800D.
full-wave
leads
They
as
motor
MAXIMUM
Shorted-Emitter
low
mounting
controls.
light
Switching
triacs
utilizing
for the control
and power-switching
These devices are designed

onstate for either polarity
T2800M+
switches
to facilitate
are intended
applications
controls.
and
silicon
10o-A Peak Surge Full-Cycle

Current Ratings
on
are
a plastic
Center-Gate
gate-
negative
case
current
printed-circuit
Supply
off-state
dimmers.
The unique
heating
operation
heat-sink
REPETITIVE
PEAK OFF-STAToE VOLTAGE:
+Formerly
Voltage at Frequencies
also
at high
size.
ReA
of
package
low
case
have
an
onstate
and repetitive
200,
600
400,
and
provides
temperatures
volts,
re-
not only ease of
impedance,
and
which
permits
allows
reduced
Oev. Nos. TA7364, TA7365, and TA7518,respectively.

Load.
T2800B
T2800D
T2800M
200
400
600
VOROM
'TIRMSJ
---8----
_..............................
--
See Fig. 3 ---
ON-STATE CURRENT:
'TSM
60 Hz (sinusoidal) ................................................
50 Hz (sinusoidal)

PEAK GATETRIGGER
Mounting
Board
They
design
Facilitates
at a TC of aoc
thermal
up to 50160 Hz and with Resistive or Inductive
RMS ON-STATE CURRENT (Conduction angle = 360):

Case temperature
Resistance
Design
voltages.
ratings
plastic
but
.........................................
TC=800C
triggering
of a amperes
voltage
spectively.
Values:
with Sinusoidal
Gateopen.TJ=-65to100C
gate
rating
of ac loads in such
from an offstate to an
voltage with positive or
Thermal
on a Printed-Circuit
Design
mounting
For Operation
low
Package
losses
systems.
to switch
of applied
____
___
100 ____
85 ____
A
A
, .....................
--See
Fig. 4---
____
___
16 ____
CURRENT:
A
'GTM
Peak (For 1 ~s max., IGTM ~4
AVERAGE
TEMPERATURE
A. See Fig. 11
, ............
PGM
PGIAVI---
0.2 ___
RANGE:
Storage
Operating (Casel
TERMINAL
.................
.............................
.........................
TEMPERATURE
Tstg
TC
-65 to 150 __
-65 to'100
__
(During soldering):
For 10 s max. (terminals and easel
For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1.
For either polarity of gate voltage (VG) with reference to main terminal 1.
. For temperature measurement reference point, seeDimensional Outline.
___
TT
225 ____
Peak Off-State Current:Gate Open

At TJ ~ + 1000C and VoROM ~ Max. rated value
Maximum On-State Voltage:For iT ~30A(peak) and TC ~ +250C
...............
DC Holding Current:Gate Open

Initial principal current ~ 150mA (DC)
At TC ~ +25 c ...............
For other case temperatures ......
loRoM
0.1
0.1
0.1
mA
vTM
1.7
1.7
1.7
15
30
15 30
See Fig. 8.
15
30
mA
IHO
Critical Rate of Rise of Commutation Voltage:-

For Vo ~ VoROM, IT(RMS) ~ 8 A, Commutating
di/dt ~ 4.3 Alms, and gate unenergized
At T C = +80 C .............
Critical Rate-of-Rise of Off-State Voltage:For Vo ~ VoROM exponential voltage rise, and gate open
At T C ~ + 1000(; ........
For other case temperatures .............
DC Gate-Trigger Current:- t
For Vo ~ 12V (DC), RL ~ 12 D
TC = +25 oC, and specified triggering mode:
1+Mode: VMT2 is positive, VG is positive ......
111- Mode: VMT2 is negative, VG is negative ..........
dv/dt
dv!dt
IGT
VGT
For Vo ~ VoROM and RL = 125 D

At T C = + 100C ............................
10
250
See Fig. 10.
60
200
V!!'-s
10
15
25
25
mA
10
100 300
75
1- Mode: VMT2 is positive, VG is negative ...........

111+Mode: VMT2 is negative, VG is positive .........
DC GateTrigger Voltage:-t
For Vo ~ 12V (DC) and RL ~ 12 D
At TC = +25 c .............
For other case temperatures .......
V!!'-s
10
15
25
25
20
30
60
60
1.25
2.5
10
10
15
25
25
20 60
30 60
See Fig. 12. & 13.
20
30
60
60
1.25
2.5
1.25
2.5
0.2
See Fig. 14.
1.6
2.5
!'-S
2.2
2.2
OC!W
60
60
C!W
0.2
0.2
tgt
1.6
2.5
1.6
2.5
8J-C
2.2
60
Gate-Controlled TurnOn Time:

For Vo = VoROM and IGT ~ 80 mA
O.l!,-s rise time, and iT ~ 10A (peak)
At TC = +250C (See Fig. 15).
Thermal Resistance:
Junction-to-Case ..
Junction-ta-Ambient
....
8J-A
-For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal!.
tFor either polarity of gate voltage (VG) with reference to main terminal!.
.Variants of these devices having dv!dt characteristics selected specifically for inductive loads are available on
special order; for additional information, contact your RCA Representative or your RCA Distributor.

LOAD: RESISTIVE OR INDUCTiVE
CONDUCTION
ANGLE:
360
CASE TEMPERATURE:
MEASURED AS
SHOWN ON OiMENSIONAL
OUTLINE
o
FULL-
4
CYCLE
RMS
SUPPLY FREQUENCY:
LOAD: RESISTIVE
- ..
~~~E
100
"""
wI
>-
E ~
~ ~BO
w>-
"'z
'w
SO 160
10
Hz
......
"-
"
~O
Ht7
.
~
~G
ww
e>>~ ~40
CURRENT[ITlRMS1]-A
9ZC5-
SINE
WAVE
t5018RZ
GA~E CO~~IROL MAY ~E LO 5T"

INTERVAL.
OVERLOAD MAY NOT BE REPEATED UNTIL JUNCTION
NED
+6M~fER:ci~~~T~~~
RETUR
RATED VALUE,
SOH':>
"''?
:::::::-::--
~
z
0
20
Ei 8
10
SURGE CURRENT
4
Ei 8
100
DURATION-FULL
4
RMS ON-STATE
II III1
I I II11
01~~~~~:~~~~E~Tfl
:[;T8{~:~
J: 8A
~ :i60
it'
ON-STATE
4
Ei 8
1000
CYCLES
9255 - 3910 R2
8
CURRENT
10
12
[tT(RMS~-9A2CS_15017RI
o
POSITIVE
0.5
OR NEGATIVE
1.5
INSTANTANEOUS
2.5
ON-STATE
VOLTAGE
(YT)-V
92C5-1502:IRI
Fig. 7 - On-state current vs. on-stare vOltage.
Fig.
6 - Oscilloscope display for measurement of gate-controlled

turnon time (tgt).
o
RFI
~J
~~
FILTER
r------l
I
tlRCA
I
TRIAC I
(SEE
I
TABLE I J
o
I
80
z cr: 60
'"'"
~a
LF
>z
'"'"
i=Ci
CF
<n-'
00
<>.'"
u
Cl
D' TO TERMINALS
D, RESPECTIVELY
1.2K
"
FOR INDUCTIVE LOADS

2W
FOR PHOTOCELL
CONTROL
TO TERMINALS
A AND B,
RESPECTIVELY
B'
I
I C,
R,
C AND
1.2 Kn
'"~
240 V
t20v
O.O'5B ,..F/200V
0.I,..F/400V
~
~
'"
I Kil
PHOTOCELL
92:C5-17995
Cl~
~>
~~
RFI
AC
INPUT
C,
C2
R,
R2
R3
VOLTAGE
120 V
60 ",
240 V
50 Hz
240V
60",
0.1
~F
200 V
0.1
Jl.F
40(1V
0.1
01 ~F
400 V
0.1 ~F
0.1
~F
l00V
~F
l00V
'00 V
100 Kn
2.21<11
.W
,W
.W
.w
2501<n
~wKn
J.Jl<n
J~J:n
151<.11
.W
.W
.W
151<n
151<n
LF
(typ.)
loo~H
"'~
J.. ~
FILTER
CF
(typ.l
0.1 ~F
200 V
Jl.F
400 V
RCA
Cl~
TYPES
'"~
T2800B
0.1
200,"
200 ~H
0.1 ~F
400 V
T2800D
T2800D
'"-'
250
'"
...
u
9255- 3907
Fig. 10 - Critical rate-ofrise of off-state voltage vs. case temperature.
6 80.01
POSITIVE
OR NEGATIVE
6 80.1
DC GATE-TRIGGER
81.0
CURRENT (lGT)-A
92SS-3785RI
I
-w
ci
"
;::
z
-'>
;21
~:;
w>
.... -
....
z~
~~
~>
w
~
'"
~
w
-'-'
0
iO
8
w
....
;;
0
50
roo
150
200
250
DC GATE-TRIGGER CURRENT (IGT)-mA
300
92CS-17062
350
0012
0.045
0.575
0395
0.365
0.300
0180
0.080
0.020
0.235
0.500
b1
b2
D
E
E1
E2
"
F
L
L1
oP
Q
0.145
0060
0.120
NR231A
~RECTANGULARMETAL
WASHER
,,"Vol'l"''''UAfPlJ6L'SH(O
'''''DW..HPR'Cf5
V'
~~~~~~SUlATOR
HOLE
OIA.
'" O.1~5 0, 141
,n
~~,;~5~,;:::~,,'cE
1~~:~s~~7K
6>
--
METAL
er---
WASHER
lQCKWASHER
HEXNUT
SOLDEALUG
HEXNUT
495334 7
INSULATING
0.250
0.141
SCREw,632
k'
0.410
0.385
0320
0.220
0.120
0.055
0.265
0.040
0.100
~..oTA"'''''l'''IILEfAOMRC'''
0.020
0.055
0.600
BUSHING
~~OU~~~'~I~.OOmml
~L'~~::~~'~:~E:;n~
MAX
"'OT"'V""IMlltJ"O~\R,,,,
0.31
1.143
0.51
1.397
14.61
15.24
10.04
928
7.62
4.57
2.03
0.51
5.97
10.41
12.70
9.77
812
5.58
3.04
1.39
6.73
3.582
1.02
6.35
3.683
1.52
2.54
3,04
OO(]5LJ1]
Solid State
Division
6-A (rms) on-state current rating

100-A peak surge full-cycle current rating at 60 Hz
85-A peak surge full-cycle current rating at 50 Hz
Shorted-emitter
design - contains
gate to main terminal 1
internal
diffused
resistor
from
Center gate constructior- provides rapid uniform gate-current

spreading for faster turn-on with substantially
reduced heating
Low switching losses
Low thermal resistance
Package suitable for mounting
The
T28010F
gate-controlled
control
light
of ac loads
dimmers
power-switching
This
triac
device
on-state
(formerly
full-wave
in such
(300
to
RCA
ac switch.
applications
WI.
1440
type
40842)
It is intended
as motor
heating
negative
is a
rating
for the
and
is designed
to switch
polarity
from
of applied
MAXIMUM RATINGS, Absolute-Maximum
an off-state
voltage
mounting
operation
heat-sink
to an
with positive
or
triggering
off-state
The unique
systems.
for either
gate
of 6 amperes
repetitive
controls,
controls,
on printed-circuit
plastic
effects
boards
voltages.
It has an on-state
voltage
package
current
of 800C and a
rating of 450 volts.

design
provides
not only ease of
but also low thermal

impedance,
which allows
at high case temperatures
and permits
reduced
size.
Values:
For operation with 50160 Hz, Sinusoidal Supply Voltage and Resistive or Inductive Load
T2801 DF
(40842)
REPETITIVE
PEAK OFF-STATE
Gate open, for T J
VOL TAGE*
= 40 to +1 aaoe
VDROM
450
ITIRMS)
100

For case temperature
ITCl of +80C and a conduction
angle of 360
ON-STATE CURRENT
For one full cycle of applied principal voltage lBO-Hz, sinusoidal)

For one full cycle of applied principal voltage (50-Hz, sinusoidall
For more than one full cycle of applied voltage
PEAK GATE-TRIGGER
For 10 J.1.S max.
CURRENT
ITSM
A
85
See Fig. 4
t
IGTM
16
0.2

PEAKt
For 10 /" max. and IGTM:S; 4 A (peak)
PGM
AVERAGE
PG(AV)
TEMPERATURE RANGq
Storage
Operating (case)
..................
-40 to +150oC
-40 to +100oC
.........
.
with reference to main terminal 1.
For information on the reference point of temperature measurement, see Dimensional Outline.
ELECTRICAL CHARACTERISTICS,
Unless Otherwise Specified.
At Maximum
Ratings and at Indicated
Case Temperature
(TCi
LIMITS
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNITS
IDROM
0.1
mA
"TM
1.5
2.25
Peak Off-State Current: *

Gate Open
At TJ = +100oC and VDROM = Max. rated value
Maximum On-State Voltage: *
For iT = 10 A (peak) and TC = +250C
Critical Rate of Rise of Commutation
Voltage: *'
For vD = VDROM, IT(RMS) = 6 A, Commutating

di/dt = 3.2 Alms, and gate unenergized
At TC= +80oC .
Critical Rate of Rise of Off-State
dvldt
VII'S
2
10
250
Voltage. *
For vD = VDROM, exponential voltage rise, and gate open

At TC = +100oC
dvldt
20
VII'S
See Fig. 6.
DC Gate-Trigger Current: t
For vD = 12 V (DC), RL = 12n
TC = +250C, and specified triggering mode:
mA
IGT
1+ Mode: VMT2 is positive, VG is positive
25
80
111-Mode: VMT2 is negative, VG is negative
30
80
1.5
See Fig. 10.
4.0
0.2
2.2
o J-C
2.2
J.A
DC Gate-Trigger Voltage: *t
For vD = 12 V (DC) and RL = 12n
At TC = +250C .
VGT

For vD = VDROM and RL = 125n
At TC = +100oC
Gate-Controlled,
..
TurnOn Time:

For vD = VDROM and IGT = 80 mA
0.1 f.1Srise time, and iT = lOA
tgt
J1S
(peak)
at TC = +250C
Thermal Resistance:
JunctiontoCase
Junction-to-Ambient
For either polarity of main terminal 2 voltage (VMT21 with reference to main terminal 1.
t For either polarity of gate voltage IVGI with reference to main terminal 1.
Variants of these devices having dv/dt characteristics

selected specifically for inductive loads are available
special order; for additional information, contact your ReA Representative or your ReA Distributor.
QUADRANT
No. III
MAIN TERMINAL 2 ON
NEGATIVE
STATE
_ I
on
60
C/W
C/W
o
FULL-
"'
CYCLE
RMS
ON-STATE
10
CURRENT[IT(RMSll-A
RMS ON-STATE
to
8
CURRENT
12
[IT(AMSll~:cS_18079
92CS-18078
100
SUPPLY FREQUENCY: 50/60 Hz SINE WAVE

LOAD: RESISTIVE
CASE TEMPERATURE
(TCl : + 800 C
RMS ON-STATE CURRENT [IT(RMSl)::6
GATE CONTROL MAY BE LOST
FOLLOWING SURGE-CURRENT
INTERVAL.
OVERLOAD MAY NOT BE REpEATED UNTIL JUNCTION
TEMPERATURE
HAS RETURNED
TO STEADY-STATE
RATED VALUE
~l
!: ~
~ ~BO
w>-
~~
~ ~60
~G
ww
'"
g;
>~40
"'~
'" z
~
20
.68
10
SURGE-CURRENT
68
100
DURATION-FULL
468
1000
CYCLES
92CS-18080
o
POSITIVE
0.5
OR NEGATIVE
1.5
INSTANTANEOUS
2.5
ON-STATE
VOLTAGE
(vTI-V
92CS-18082
VD z VOROM
GATE OPEN
6 80.01
POSITIVE
OR NEGATIVE
80.1
DC GATE-TRIGGER
81.0
CURRENT
l1GT)-A
92CS-16083
AC
INPUT
C1
C2
R1
R2
R3
(typ.l
VOLTAGE
240V
50Hz
240V
60Hz
RFI FILTER
L
C
F
F
O.1I'F O.1I'F 250Kn 3.3Kn 15Kn

'/,W
Y2W
400V 100V 1W
O.1I'F O.1I'F 200Kn 3.3Kn
'/,W
400V 100V 1W
15Kn
%W
(typ.l
200I'H O.lI'F
400V
.200I'H
O.1I'F
400V
~r=-:-~PTIONAL
.CHAMPFER
SEATING
PLANE
hI
,,
A
L~I
F
TEMPERATURE
MEASUREMENT
POINT
~
-'>
;ll
" ...
or "
w>
...
....
z~
~~
~>
~
"
INCHES
SYMBOL
b
bl
b2
0
E
El
E2
.,
F
H
L
Ll
MilLIMETERS
MIN.
MAX.
MIN.
MAX.
0.160
0.190
4.07
0.040
0.64
0.31
1.143
4.82
1.02
0.025
0012
0.045
0.575
0.395
0.365
0.300
0.180
0.080
0.020
0.235
0.500
0.020
0.055
0.600
14.61
15.24
0.410
10.04
10.41
9.77
812
5.58
3.04
1.39
6.73
0.385
0.320
0.220
0.120
0.055
0.265
0.250
oP
Q
0.141
0.145
0.040
0.100
0.060
0.120
9.28
7.62
4.57
2.03
0.51
5.97
12.70
3.582
1.02
2.54
0.51
1.397
6.35
3.683
1.52
3.04
ffil(]5LJ[J
Solid State
Division

Power-Control and Power_Switching
Applications
For Low-Voltage Operation - T2850A (40900)*

For 120-V Line Operation - T2850B (40901)*
For 240-V Line Operation - T2850D (40902) *
Features:
The
T2850A,
controlled
three
T2850Ba,
full-wave
controls,
are designed
on-state
for either
negative
gate triggering
rent
rating
polarity
For Operation
to switch
-65
are
Center-Gate
gate-
case with
boards.
in such
heating
an offstate
of appl ied voltage

They
at aTe
Supply
to an
with positive
have an onstate
of 75C
and
or
cur-
repetitive
Design
off-state
tively.
voltage
The
ISOWATT
that
are
Low Thermal
Package Suitable for Direct

Mounting on Heat Sink
Glass Passivated
ratings
Because
of this
directly
on
uses a plastic
isolated
internal
a heat
Junctions
of 100, 200, and 400 volts,
package
electrically
Resistance
from
isolation,
sink,
heat transfer
aFormerly
ReA Dev. No. TA8357
bFormerly
RCA Dev. No. TA8358
mounting
any
is improved
up
(0
50160 Hz and with Resistive or Inductive
insulating
and heat-sink
T2850A
_..
IConduct;on angle'
VOAOM
100
3601:
ITIRMSI
75C
-------
8 -----
-----~eH~3---
PEAK SURGE (NON-REPETITIVEI ON-STATE CURRENT:

ITSM
60 Hz (sinusoidal)
100----
50 Hz (sinusoidal)
than
one cycle
------85---of applied
PEAK GATETRIGGER CURRENT:

For 1 J.lS max.; see Fig. 11
principal
voltage
............
TERMINAL
Fig.
4 ---
TEMPERATURE RANGE:"
Storage
_. . . . . . . . . . . . . . .
lCasel
A
A
See
IGTM

Peak (For 1 IJSmax., IGTM " 4 A; see Fig. 11)
AVERAGE...
. ....................
Operating
hardware;
size can be
Load.
For more
leads
flange.
the triac can be mounted
without
therefore
reduced.
case with three

the
respec-
Values:
to 100C

Case temperature
TC'
triacs
a plastic
from
REPETITIVE PEAK OFF-STATE VOLTAGE:

Gate open. TJ=
Low Switch ing Losses
systems.
Absolute-Maximum
with Sinusoidal
Shorted-Emitter,
on printed-circuit
voltages.
of 8 amperes
MAXIMUM RATINGS,
the control
of ac loads
controls,
light dimmers,
and power-switching
These devices
utilizing
mounting
intended
for
as motor
Internal Isolation
10o-A Peak Surge Full-Cycle
Current Ratings
T2850Db
ac switches
leads to facilitate
They are
applications
and
..................
PGM
16
PG(AVI
_
Tstg
TC
----
A
W
0.2----
-65 to 150---
')C
65to 100---
'c
TEMPERATURE
For 10 s max. {terminals
(Dur;ng solder;ngl:
and casel
.
TT
225----
"c
LIMITS
CHARACTERISTIC
SYMBOL
TYP.
MAX.
MIN.
0.1
"TM
1.7
IHO
15
30
10ROM
..................
ac Holding Current:'
Gate Open
Initial principal current = 150 mA (de)
.................
At TC = 25'C
.....
. ........ ..
............
.. . ......
T2850B
MIN.
Peak OffState Current:'
Gate Open, VOROM = Max. rated value
................................
At TJ = 100'C
For iT = 30 A (peak) and TC = 25'C
T2850A
TYP.
UNITS
T2850D
MAX.
MIN.
0.1
0.1
mA
1.7
1.7
30
15
15
TYP.
MAX.
30
mA
See Fig. 8
Critical Rate of Rise of Commutation Voltage:"

Forva = VOROM, 'T(RMS) = 8 A, Commutating
dv/dt
V//J-s
di/dt = 4.3 Alms, and gate unenergized

AtTC=75'C
........... ....... ....... . . . . . . .
10
10
10
125
350
100
300
75
250
Critical Rate of Rise of OffState Voltage:'

For va = VaROM, exponential voltage rise, and gate open
. .... .. . . . . ... . .. . .. ... .. . . . ..
AtTC=100'C
...
dv/dt
.... .... ... ... . .......
V//J-s
See Fig. 10
ac GateTrigger Current:'t
For vO = 12 V (del. RL = 12n
TC = 25'C, and specified triggering mode:
I + Mode: VMT2 is positive, VG is positive ... ...... ...
10
25
10
25
10
25
15
25
15
25
15
25
.. .........
20
60
20
60
20
60
...... ......
30
60
30
60
30
60
ill -Mode: VMT2 is negative, VG is negative.
.. ........
I - Mode:
VMT2 is positive, VG is negative
ill + Mode: VMT2 is negative, V G is positive
.....
.............
IGT
.... . .
mA
See Figs . 12& 13
ac GateTrigger Voltage:'t
For va = 12 V (de) and RL = 12n
AtTC = 100'C
Gate-Controlled
......................
................
... ........
At TC = 25'C

Forva = VaROM and RL
............
Turn-On Time
...
. ...........
25C ISee Fig. 151
For
either
polarity
of main terminal
either
polarity
of gate voltage
11.251
2.5
See Fig. 14
0.2
0.2
0.2
1.6
2.5
1.6
2.5
1.6
2.5
/J-S
3.1
3.1
3.1
'CIW
60
60
'CIW
tgt
.. .... .... .. . .....

... ..... ... .... . . . . . . . . . . . ...
t For
-11.2512.51
251251
...................
Thermal Resistance:
Junction-ta-Case
.. .....
JunctiontoAmbient
11
(Delay Time + Rise Time):
For vO = VaROM and IGT = 160 mA

rise time = O.l/J-s, and iT = lOA (peak)
At TC =
VGT
.. ....
125n
2 voltage
(VMT21 with reference
(VGI with reference
ROJC
ROJA
to main terminal
to main terminal
60
1.
1.
Variants of these devices having dv/dt characteristics

selected specifically for Inductive loads are available
special order; for additional
information,
contact your RCA Representative
or your RCA Distributor.
on
QUADRANT
No.1
MAIN TERMINAL
POSITIVE
-ON
STATE
IH

LOAD RESISTIVE OR INDUCTIVE
CONDUCTION ANGLE:
3600
CASE TEMPERATURE:
MEASURED AS
SHOWN ON DIMENSIONAL OUTLINE
FULL-CYCLE
RMS
ON-STATE
CURRENT[ITIRMS}]-A
92C$ - 15018R2
Fig. 2 - Power dissipation vs. on-state current.
100
SUPPLY FREQUENCY: SO 160 Hz SINE WAVE

LOAD: RESISTIVE
CASE TEMPERATURE
{Tcl : 750 C
[I T RMS
SA
J:
~.!.
;:: ~
~ ;80
wo-
<rZ
60 Hz
,W
~ ~60
~a

INTERVAL.
OVERLOAD MAY NOT BE REPEATED UNTIL JUNCTION
TEMPERATURE
HAS RETURNED
TO STEADY-STATE
RATED VALUE.
I
ww
'"
50 Hz
0-
g:; ~ 40
"'~
"
~ 0
20
468
468
10
SURGE CURRENT
468
100
DURATION-FULL
1000
CYCLES
92SS-3910
R3
4
6
8
RMS ON - STATE CURRENT
10
[1 T (RMSU
12
-A
92CS-19602
o
POSITIVE
Fig. 6-0scilloscope display for measurement of gate-.controlled turn

on time (tgt).
RFI
FILTER
r------l
I
*RCA
TRIAC
lSEE
TABLE)
LF
t
I
1
I
CF
FOR INDUCTIVE LOADS

0' TO TERMINALS
C AND
D. RESPECTIVELY
1.$: 2W
"
120v
FOR PHOTOCELL
CONTROL
TO TERMINALS
A AND
RESPECTIVELY
Cs
e,
e'
0.06B ~F I200V
1.2 Kn
PHOTOCELL
AC
INPUT
VOLTAGE
RFI FILTER
C,
C2
A,
A2
A3
120 V
60 H,
0.1 ~F
200 V
0.1 ~F
,OOV
100 Kn
2.2 Kn
15 Kn
240 V
50 H,
0.1 ~F
400V
0.1 ~F
ioo V
250 Kn
,W
3.3 Kn
15 Kn
240 V
60 H,
0.1 ~F
400 V
0.1 ~F
'OOV
200 Kn
3.3 Kn
15 Kn
~w
~w
~w
,w I ~w
~w
~w
~w
ACA
TYPES
I~P~)
CF'
ltvp.l
100 ~H
0.1 ~F
200V
T28508
200 ~H
0.1 ~F
400 V
T28500
200 ~H
0.1 ~F
400 V
T28500
0.5
OR NEGATIVE
1.5
INSTANTANEOUS
2
ON-STATE
2.5
VOLTAGE
3
{vT)-V
92CS-1502lRl
6 80.01
POSITIVE
OR NEGATIVE
6 80.1
DC
GATE-TRIGGER
81.0
CURRENT
tIGTI-A
92SS-31B5R2
Fig. 11 - Gate-pulse characteristics for a/l triggering modes.
-40
CASE
50
20
TEMPERATURE
100
DC GATE-TRIGGER
150
(TC)-
200
CURRENT
40
C
250
300
tI.GTl-mA
UC$-170U
350
MILLIMETERS
INCHES
SYMBOL
CHAMPFER
~L
~H=OPTIONAL
SEATlNGPlANE
fT
F
\'
""1
"2
D
E
E1
E2
TEMPERATURE
MEASUREMENT
POINT
~"l,,~
!.-i
'1
F
H
_____T
L
L1
,-'I
l~
I.
oP
Q
b}
MIN.
MAX.
0160
0025
0012
0045
0.575
0.395
0.365
0300
0180
0.080
0020
0.235
0500
Fig. 16 - Suggested mounting
hardware.
14,61
15.74
10.04
10.41
0.385
0.320
0220
0120
0.055
0.265
1.143
928
7.62
4.57
2.03
0.51
5.97
12.70
0.145
0040
0.100
0.060
0.120
3582
102
482
102
0.410
407
064
031
0.250
Tab - Isolated
MAX.
0190
0040
0.020
0.055
0.600
0141
Lead No.1 - Main Terminal 1

Lead No.2 - Main Terminal 2
Lead No.3 Gate
Mounting
MIN.
2.54
051
1 397
977
812
5.58
304
139
673
635
3683
1.52
304
Thyristors
2N5571 2N5573 T4120B
2N5572 2N5574 T4120D
T4100M T4110M T4120M
OOC05LlO
Solid State
Division
Main
Terminal
r., . :.

Gate
For 120-V Line Operation - 2N5571, 2N5573, T4120B (40802)**

For 240-V Line Operation - 2N5572, 2N5574, T4120D (40803)**
For High-Voltage Operation - T4100M, T4110M, T4120M
(40797,40798,40804)**
l..
R~~,;I
~
~~
2N5571
2N5572
T4100M
Features:
Press-fit
2N5573
2N5574
T4110M
Stud
T4120B
T41200
T4120M
These ReA
triacs are gate-controlled,
Isolated-stud
di/dt Capability
Shorted-Emitter
Low Switch ing Losses
full-wave
silicon
switches. They are designed to switch from an off-state

on-state for either polarity
150 A/ps
Center-Gate Design
Low On-State Voltage at High
Current Levels
These triacs are intended
ac
tions
to an
of applied voltage with positive
for control
such as heating controls,
equipment,
light
dimmers,
motor
of ac loads in applicacontrols,
arc-welding
and power switching
systems.

MAXIMUM
RATINGS, A bsolu teMaximum Values:
For Operation with Sinusoidal Supply Voltage at Frequencies up to
50160 Hz and with Resistive or Inductive Load.
2N5571
2N5572
T4100M
2N5573
2N5574
*REPETITIVE
T4120B
T4120D
T4110M
T4120M
200
400
Gate open. T J
PEAK OFF-STATE
=
-65
VOLTAGE:
to 1000 C
*RMS ON-STATE CURRENT (Condur.tion

Case temperature
T C= 80 C I Press-fit & stud types)
= 750 C (I solated-stud types)
angle
VOROM
600
3600):
ITIRMS)
15
15
See Fig.
A
A
3
ITSM
60 Hz (sinusoidal)
50 Hz (sinusoidal)
For more than one cycle of applied principal voltage .........
RATE..QF-CHANGE
OF ONSTATE
100
85
See Fig. 4 ----
.
.
CURRENT:
dildt
VOM= VOROM, IGT = 160mA, t, = 0.1 ps ISee Fig. 131

PEAK GATETRIGGER
CURRENT:
150
.
IGTM
For 1 J.l.s max., See Fig. 7.
*GATE
A
A
Alps
PGM
16
PGIAV)
0.5
POWER DISSIPATION:
PEAK IFor 1 ps max. IGTM -:; 4 A: See Fig. 71

AVERAGE
*TEMPERATURE
,.
RANGE:
Storage
Operating ICasel .
*TERMINAL
TEMPERATURE
.
(During
soldering):
-65
-65
Tstg
TC
to 150 ___
to 100 ___
TT
225
In accordance with JEDEC registration data format IJS-14. RDF 2) filed for the JEDEC 2NSeries) tYpes .
For either polarity
of main terminal 2 voltage (VMT21 with reference to main terminal
For either polarity
of gate voltage (VGI with reference to main terminal
.. For temperature measurement reference point, see Dimensional Outline.
c
OC
1.
1.
_ ..........
CHARACTERISTIC
PeakOff-State Current:
Gate open, TJ = 1000 C, VDROM = Max. rated value
Maximum On-5tate VOltar,::'
For iT = 21 A (peak). C = 250 C
. .....
. ...
SYMBOL
UNITS
Min.
Tvp.
Max.
'DROM
0.2
mA
VTM
1.4
1.8
20
75
See Fig. 6
75
300
mA
2
2
10
10
V//ls
30
20
10
150
100
75
20
20
35
35
50
50
80
80
75
75
100
100
See Figs. 8 & 9
150
150
200
200
Gate open, Initial principal current = 500 mA (DC), vD = 12V:
....
TC=250C
TC = -650 C .. .. . . .....
.. . . . . . . . . ...
Critical Rate-of-Rise of Commutation Voltage:'
For vD = VDROM, IT(RMSI = 15 A, commutating
= 8 Alms, gate unenergized, (SeeFig. 74):
di/dt
TC = 800 C (press-fit & stud typesl
.
....
= 750 C (Isolated-stud) . . ........
For All Types

UnlessOtherwise Specified
IHO
dv/dt
Critical Rate-of-Riseof Off-State Voltage:'

For vD = VDROM, exponential voltage rise,gate open,
TC = 1000 C:
2N5571,2N5573,
T4120B . . . . . . . . . . . ...
2N5572, 2N5574, T4120D . ...............
T4100M, T4110M, T4120M ......
Mode
1+
1111111+
DC Gate-Trigger Current:'.
For vD = 12 V (DCI,
RL =30 n,
TC = 250 C
Mode
1+
III'
For vD = 12 V (DC),
RL =30n,
TC = -650 C
positive
positive
negative
negative
positive
negative
negative
negative
positive
negative
negative
positive
..
......
......
......
........
. ......
1
2
2.5
4
0.2
See Fig. 10
-
tgt
1.6
2.5
ROJC
VGT
Gate-Controlled Turn-Dn Time:

(Delay Time + Rise Timel
For vD = VDROM, IGT = 160 mA, tr = 0.1 /lS,
iT = 25 A (peakl, TC = 250 C (SeeFigs. 77 & 751
.....
V//ls
mA
positive
DC Gate-Trigger Voltage:'.
For VD = 12 V(DC). RL = 30 n,
TC = 250 C . . . . . . . . . . . - . . . . . . . ., . ....
. . . . . . . . . . . . . ....
TC = -650 C ........
t=or other case temperatures
.............
For VD = VDROM, RL = 125 n, TC = 1000 C
Thermal Resistance:
Junction-ta-Case:
Steady-State.
Transient .. ........
IGT
VG
positive
111+
.. . ...........
dv/dt
VG
VMT2
positive
negative
VMT2
,-
-.
/lS
See Fig. 12
oCNJ
Junction-to-lsolated Hex (Stud, see Dim. Outline):

Steady-State
... .. . . ..... . - ......
ROJIH
In accordance with JEDEC registration data format
For either polarity of main terminal
For either polarity of gate voltage (VG) wit~ reference to main terminal
(JS14. RDF 2) filed for the JEDEC
2 voltage (VMT2)
with reference to roain terminal

1.
1.1
(2N..seriesl
1.
types.
25
;0
20
i=
<t
~
15
'"
~
~
t!i
;:
~
CURRENT WAVEFO RM: SINUSOIDAL

lOAD:
RESIST IVE OR INDUCTIVE
CONDUCTION
ANG lE = 360<1
CASE TEMPERATU RE: MEASURED
AS
SHOWN ON DIM ENSIONAl
OUTLINES
F'~Bml
o
Wu
CONDUCTION
ANGLE
~.!.
wU
-'!::
CD
100
"'w
;0",
-"I
+9m
PRESS-FIT a
STUD TYPES
0:>
...J<90
-'>-
"''''
::i~80
:l>-
..-
..." """-
f---
40
"'
"
~
5
10
CYCLE RMS ON-STATE
CURRENT
15
[IT(RMS~-A
20
0
4
SURGE
CURRENT
to
-
z_
Ww
~~
:>>-
u'"
w~
~z
~2i
zw
0>
<ni=
40
w .
~~
20
"
o
I
INSTANTANEOUS
ON-STATE
VOLTAGE
{POSITIVE
OR NEGATIVE I
(vT)-V
-70
60
-50 -40
CASE
-30 -20 -10

TEMPERATURE
8103
CYCLES
92SS-3822RI
:>
<n
60
FUll
sO;;;
0'"
~O
OVERLOAD
MAY NOT BE REPEATED
UNTIL JUNCTION
TEMPERATURE
HAS
RETURNED
WITHIN
STEADY-STATE
RATED
VALUE.
" ~",
60
70
"'-
.......
w-
\S,OlATED~S7UD TYPES
'"
~I
E"i
ti ~80
"'>z~
~~
"'w
:>.
GATE CONTROL MAY BE lOST

FOLLOWING
SURGE CURRENT
INTERVAL
z
0
_<t100
<n.
= 15 A
AT SPECIFIED CASE TEMP
'"in
10
~~~Db'~;~~;,!~ECURRENT
lInRMSI]
>-
180 \JJ360
15
10 20
30
(Tcl<lC
92LS-2142R2
Fig. 6 - DC holding current vs. case

temperature.
40
3823RI
0.1
DC
GATE TRIGGER
CURRENT
tIGTI-A
t POSITIVE OR NEGATIVE
92CS-17058
Fig. 8 - DC gate-trigger current vs. case

temperature (1+ & 11/-modes).
Fig. 7 - Gate trigger characteristics and

limiting conditions for determination of
permissible gate trigger aulses.
,;
:5<>
-'>
~I
,.
150
<>
'"
>-
'"
,.g
100
><>
MtlXIMUM
>- 3
~?
MtlJ(IMUM
TYPICtlL
.2
TYPICAL
.;,
50
~
0
-75
-50
-25
CASE TEMPERATURE
(Tel
0
c
25
Fig. 10 - DC gate-trigger voltage vs. case

temperature.
'"
z
~
",,,,
>-'"
'"
>-'"
"'-,
1
Ii
100
~7
I
60
/
40
orz
~~
~
IT
~~
>-0
zl
T
---1'
I
60
>- ~
'I",
"'I
t;;>-
II
I,
20
'l
I
468
50
100
DC GATE -TRIGGER
150
200
CURRENT
250
IIGT)-
300
mA
10-3
350
TIME
92CS-17062
AFTER
466
10-2
468
10-1

92LS-2407RI
Fig. 14-Relarionship between supply voltage

and principal current (inductive load)
showing reference points for definition
of commurating voltage fdv/dtJ.
between off-state voltage,
on'state current, and gate-trigger voltage
of turn-on time (tgt).
,20V
60H,
240V
6OH.
240V
SOH,
c,
0'15
>ooV
0115
400V
0'15
400V
c>
0'15
looV
0'15
,00V
0'15
'OOV
A,
100.<11
11m
2001<11
2501<11
R>
221<11
11m
3JKn
33Kn
1/2W
1/2W
AC INPUT
VOLTAGE
R,
I
ReA
TRIAC:
ISEE
TABLEl!
R,
RS
I
R,
,,
I
I
I
C,
C,
RJ
15KS'l
11m
151<n
11m
15Kn
11m
PHOTOCEL l Rp
CONTROL
12Kn
m
121<n
m
121<n
m
o.1~F
>oov
O.l~
400V
0'15
400V
l00,{!
11m
,oon
11m
R,
;"
I
I
:
L
I
cs
SNUBBER
r--
NETWORK
RS
FOR PHOTOCEll
,v<
,v<
,oon
11m
CONTROL
AFI
CF
0'15
>ooV
l~F
400V
01",
400V
LF
lOOjJH
>oojJH
>oojJH
FIL TEA
ReA
MOUNTING
TRIACS
2N5567 2N5568
2NSS69 2NSS70
T4120B T41?OD
2N5568
2NSS70
T4120D
CONSIDERATIONS
Mounting of pressfit package types depends upon an interference fit between the thyristor case and the heat sink.
As the thyristor is forced into the heat-sink hole, metal from
center and guide the pressfit package properly
case. The resulting close contact between the heat sink and
the thyristor case assures low thermal and electrical resis-
mensions provide sufficient clearance for the leads and

assure that no direct force will be applied to the glass seal
tances.
of the thyristor.
A recommended mounting
method, shown in Fig. 17,
shows pressfit knurl and heatsink hole dimensions. If these

dimensions
are maintained,
a "worst-case"
condition
of
into the
heat sink. The insertion tool should be a hollow shaft having

an inner diameter of 0.380 0.010 in. (9.65 0.254 mm)
and an outer diameter of 0.500 in. (12.70 mml. These di
The pressfit package is not restricted to a single mounting arrangement; direct soldering and the use of epoxy ad-
0.0085 in. (0.2159 mm) interference fit will allow press-fit
hesives have been successfully employed. The pressfit case

is tin-plated to facilitate direct soldering to (he heat sink. A
insertion below the maximum allowable insertion force of
60-40 solder should be used and heat should be applied only
800 pounds. A slight chamfer in the heat-sink hole will help
long enough to allow the solder to flow freely.
Employed
Package
Resistance-oelW
Pressfitted into heat sink. Minimum required thickness of heat

sink = 1/8 in. (3.17 mm)
Press-Fit
Soldered directlv to heat sink.

(6040 solder which has a melting point of 1880 C 'should be
used. HeatinQ time should be
freely!.
0.5
0.1 to 0.35
,12S13.171
______
COPPER OR AllMlNUM
t--
4976112.6~
4914{12.6331
Stud &
Isolated
Stud
HEAT SINK
Stud
DireCtly mounted on heat sink

with or without the use of heat5i n k campau nd.
0.6
Mounted on heat sink with a

0.004 to 0.006 in. (0.102 to
0.152 mm) thick mica insulating
washer used between unit and
heat sink.
Without heat sink compound
2.5
1.5
With heat sink compound
DIMENSIONAL
OUTLINE
2N5573, 2N5574, T4110M
DIMENSIONAL
2N5571,2N5572,
FOR TYPES
OUTLINE
FOR TYPES
T4100M
REFERENCE
POINT FOR CASE
TEMPERATURE
MEASUREMENT
REFERENCE
POINT FO R CASE
TEMPERATURE
MEASUREMENT
INCHES
SYMBOL
MIN.
INCHES
SYMBOL
A
t/JO
t/Jl
t/J2
J
M
t/JT
t/JTl
MIN.
MAX.
.380
.510
.505
.475
.501
.465
'.058
.080
.750
.155
.068
.090
MILLIMETERS
MIN.
12.73
11.81
1.47
2.03
NOTES
MAX.
9.65
12.95
12.83
12.07
19.05
3.94
1.73
2.29
A
t/JO,
E
F
J
M
N
t/JT
t/JTl
rpW
.330
.544
.113
.422
.058
.080
.2225
MAX.
.505
.544
.562
.200
.950
.155
.453
.068
.090
.2268
MILLIMETERS
NOTES
MIN.
MAX.
8.4
12.8
13.81
14.28
5.08
24.13
3.94
11.50
1.73
2.29
5.760
13.82
2.87
10.72
1.47
2.03
5.652
NOTE 1: Contour and angular orientation of these terminals

is optional.
NOTE 2: Pitch diameter of 1/4-28 UNF-2A (coated) threads
(ASA 81. 1-19601.
NOTE 3: A chamfer or undercut
hexagonal portion is optional.
on one or both ends of

92S5-3817
DIMENSIONAL
OUTLINE
FOR TYPES
T4120B, T4120D,T4120M
INCHES
SYMBOL
shown wIth your RCA salesrepresentative or supplier.
MAX.
MIN.
MAX.
.604
.501
.551
.175
.673
.614
.505
.557
.185
1.055
4>0
4>01
15.34
12.72
13.99
4.44
17.09
15.59
12.82
14.14
4.69
26.79
3.94
5.33
11.48
1.73
2.29
3.75
5.760
E
F
J
M
Ml
N
4>T
4>Tl
4>T2
r/N'I
WARNING:
The RCA isolated-stud package thyristors should be handled with care. The ceramic portion of these thyristors contains BERYLLIUM
OXIDE as a major ingredient. Do not
crush, grind. or abrade these portions of the thyristors because the dust resulting from such action may be hazardous
if inhaled.
TERMINAL
CONNECTIONS
Terminal No.1-Gate
Terminal No.2-Main
Terminal 1
Case, Terminal No.3-Main
Terminal 2
MILLIMETERS
MIN.
.200
.422
.058
.080
.138
.225
.155
.210
.452
.068
.090
.148
.2268
5.08
10.72
1.47
2.03
3.50
5.652
NOTES
2
2
2
3
NOTE 1: Ceramic between hex (stud) and terminal No.3 is

beryllium oxide.
is optional.
[ID(]5LJ[J
Thyristors
2N5567 2N5569 T41218
2N5568 2N5570 T4121D
T4101M T4111M T4121M
Solid State
Division
Main
Terminal
Main
Terminal
W
.;
Main
Terminal
~uf ,J
~
r-~C)
~ate
1"
~~Gale
2N5567
2N5568
T4101M
Press-fit
Main
Terminal
Main
Terminal
2N5569
2N5570
T4111 M
Stud
For 120-V Line Operation - 2N5567, 2N5569, T4121B (40799)**

For 240-V Line Operation - 2N5568, 2N5570, T4121D (40800)**
For High-Voltage Operation - T4101 M, T4111M, T4121 M
(40795,40796,40801)**
Features:
T4121B
T4121D
T4121M
Isolated-stud
di/dt Capability = 150 Alps
Shorted-Emitter,
Low Switching Losses
Center-Gate Design

Current Levels
fuJI-wave silicon ac
These triacs are intended for control of ac loads in applica-
switches. They are designed to switch from an offstate to an

on-state for either polarity of applied voltage with positive
tions such as heating controls, motor controls, arc-welding
These RCA triacs are gatecontrolled,
equipment,
light dimmers,
and power switching
systems.

Values:
*REPETITIVE
PEAK OFFSTATE
Gale open, T J = -65
Case temperature
IT Cl
2N5568
2N5570
T4121D
, .....
VOROM
(Conduction angle
200
= 85 C
ONSTATE CURRENT:
ITSM
85
See Fig. 4----
OF ON-STATE CURRENT:
Fig.
A
A
di/dl
150
IGT = 160 mA, Ir = 0.1 ps ISee Fig. 131
For 1 J.15 max.,See
*GATE
100
50 Hz (si nusoidall
For more than one cycle of applied principal vottage
PEAK GATE-TRIGGER
See Fig. 3 ---

* 60 Hz (sinusoidal)
VDM= VOROM.
600
10
ITIRMSI
PEAK SURGE (NONREPETITIVE)
400
3600):
RATE-OF-CHANGE
T4101M
T4111M
T4121M
VOLTAGE:
10 100 C ....
*RMS ONSTATE CURRENT
2N5567
2N5569
T4121B
CURRENT:
Alps
IGTM
16
0.5
POWER DISSIPATION:
PEAK I For 1 ps max .. IGTM
<:::
AVERAGE
4 A. See Fig. 71
,
*TEMPERATURE
PGM
, ......
RANGE:'"
Storage
Operati n9 (Case) .
*TERMINAL
PG(AVI
TEMPERATURE
-651o
TsIg
-65'10
TC
(During soldering):
225
In accordance with JEDEC registration data format (JS-14, RDF 2) filed for the JEDEC (2N-Seriesl types .
measurement
c
c
TT
.. For temperature
150--100 ___
reference point, see Dimensional
Outline.
1.
ELECTRICAL
At Maximum
CHARACTERISTICS
Ratings and at Indicated
Case Temperature
(T C' Unless Otherwise
Specified
LIMITS
SYMBOL
CHARACTE R ISTIC

Gate open, Tj; 1000 C, VDROM;
Maximum On-State VOlta.r,::'
For iT; 14 A (peakl.
C; 250 C
Gate open, Initial
TC;250C
TC; -650 C
For other case
Max. rated value

...
... . . ........
principal current = 500 mA (DCI.

..... . ..... . ... ... . ... .
........
. . ..... ... . .. . .
..... ... . .. . .
temperatures
VD; 12V:
. ....
. . ...
Critical Rate-of-Rise of OffState Voltage:'

For VD= VDROM, exponential voltage rise, gate open,
TC = 1000 C:
...
. ........
2N5567,2N5569, T4121B
2N556B,2N5570,T4121D
... . . . ..... . . .. ....
T4101M, T4111M, T4121M .....
. .....
Mode
1+
III'
I'
111+
VMT2
positive
negative
positive
negative
Mode
VMT2
1+
positive
III'
negative
I'
positive
111+ negative
.... ..........
For vD =12V(DCI.
RL ;30n,
TC = -650 C
Max.
IDROM
0.1
2'
mA
VTM
1.35
1.65'
IHO
15
75
See Fig. 6
30
200'
mA
dvldt
2'
Vips
dvldt
30*
20*
10
150
100
75
Vips
10
10
20
20
25
25
40
40
mA
IGT
positive
negative
negative
positive
DC GateTrigger Voltage:'.
For vD = 12 V(DC), RL = 30 n
.
TC = 250 C .... ..... . ................
. . .. . . . . . . . . . . . ..
TC ; -650 C ... ......
I For other case temperatures
. . . . . . . .......
.
For vD ; VDROM, RL ; 125 n, TC = 1000 C
Gate-Controlled Tur~-on Time:
For vD ; VDROM, IGT; 160 mA, tr; 0.1 J.LS,
iT ; 15 A (peak), T C ; 250 C (See Figs. 11 & 15) ....
Thermal Resistance:
Junction-ta-Case:
SteadyState .. . . . . . . . . ..... . . . . . . . . ....
Transient ... . .. . . . .. . .....
. .... ........
.
TVD.
VG
positive
negative
negative
positive
VG
UNITS
Min.
.....
Critical Rate-of-Rise
of Commutation
Voltage:'
For vD ; VDROM. IT(RMS) ; 10 A, commutating
; 5.4 Alms, gate unenergized. T C = 850 C
dildt
(See Fig. 14) .............
....
= 12 V (DCI,
ForvD
RL ;30n,
;
250 C
TC
For All Types

Unless Otherwise Specified
45
100'
100'
45
150'
80
150'
80
See Figs. 8 & 9
1
2
See Fig. 10
VGT
0.2
tgt
OJC
2.5
4'
1.6
2.5
I'
J.LS
See Fig. 12
oCIW
Junctionto-lsolated
Hex (Stud, see Dim. Outline):
SteadyState
... . .... . ..... . . ........
In accordance with JEDEC registration
data format
. . ..
OJIH
(JS-14, RDF 2) filed for the JEDEC
For either polarity
of main terminal 2 voltage (VMT2) with reference to main terminal 1.
For either polarity of gate voltage (V G) with reference to main terminal 1.
(2N-Seriesl types.
1.1
100
:
TRIGGERING
MODES: ALL
ENCLOSED AREA INDICATES
LOCUS OF POSSIBLE TRIGGERING
POINTS
125
~
'"'"=>
100
ffi
g
75
'">-
50
w
>-
"'g
25
0
-75
0.'
DC
GATE TRIGGER CURRENT (IGTI-A

t POSITIVE OR NEGATIVE
92CS-17058

permissible gate trigger pulses.
~
"'g

temperature (1+ & 11/-modes).
50
25
Fig. 9 - DC gate trigger current vs. case

temperature (1- & 111+modes).
Fig. 10 - DC gate-trigger voltage vs. case

temperature.
100
w'"
>w'"
80
~
fO
>-'"
.......
1-
fa
~~
~~
~~
>-;)
zl
~7
60
/
40
"'z
~~
~
/
20
"
50
100
150
200
250
DC GATE-TRIGGER
CURRENT (IGTI-mA
300
468
350
10-3
92CS-17062
TIME
AFTER
468
10-2
468
10-l

92LS- 2407Rt
-v
+VOROM
OFF STATE
QUADRANT
NO,1I1
MAIN TERMINAL
NEGATIVE
ON
STATE
_ I
2
FUL.L-CYClE
RMS ON-STATE
10
CURRENT
~T(RMSIJ-A
9255-3902
..'"to
CURRENT
WAVEFORM:
SINUSOIDAL
lOAD:
RESISTIVE
OR INDUCTIVE
CONDUCTION
ANGLE
360
CASE
TEMPERATURE:
SHOWN
ON
MEASURED
DIMENSIONAL
~~~O~~~;~~~~\URRENT
C~E TEMP. {TC):85C
I-
AS
OUTLINES
I'..
~I
~""i
~
V)
80
'" Io.~
",",I-
2~
0'"
z'"
I
I
I I
OVERLOAD
MAY NOT BE REPEATED
UNTIL JUNCTION TEMPERATURE
HAS
RETURNED
WITHIN
STEADY-STATE
RATED VALUE.
~",
5Oi;j-
-.::::: ~
60
_co
~U
rI
GATE CONTROL
MAY BE LOST
DURING
AND IMMEDIATELY
FOLLOWING
SURGE-CURRENT
INTERVAL
z
~ctIOO
IDA
[ITtRMSU:
40
r-
~
"
20
60
2.5
FULL
CYCLE RMS ON-STATE
7.5
CURRENT
0
4
10
[IT(RMSJ-A
6 810
SURGE-CURRENT
4
DURATION
6 6102
FULL
CYCLES
92SS-3903RI
92SS-3904RI
Fig. 4 - Peak surge onstate current vs.

surge current duration .
..
E
I;;;
0>
~~
~~200
"''''
"'0 150
a~
~I-
:J~IOO
0"
IU
"
50
1.0
INSTANTANEOUS
ON-STATE VOLTAGE
(POSITIVE
OR NEGATIVE)
(vT)-V

temperature.
L
.J-----------------
""J/
.!
v~
o_LL
COMMUTATING
1_61161
I
I
di/dt
:_L_
I
'TM
1_-1--
~ld++-tr
,:f--
'Ol---j
,-~-----~
o_LJ
T-- :
!lITShl
T:I --Li-"90~'
I: POINT
t--
!~
I
I
o----L-
L __
I
VGT
r--'I
10"10 POINT
9ZCS-110r;1
0-
-----------.,t2CS 1!>3J;6~2
Fig. 15-Relarionship
Fig. 14-Relarionship between supply voltage

and prinicpal current (inductive load)
of commutating voltage fdv/dtJ.
on-state current. and gate-trigger volt-
12QV
60Hl
240V
SOH.
240V
SOH.
C,
o IjJF
200V
o IjJF
400V
o IjJF
400V
o IjJF
lOOV
O.lf.JF
lOOV
C2
o IjJF
looV
AC INPUT
VOLTAGE
R,
l00Kn
11m
200Kn
IW
250Kn
lW
R2
22Kn
11m
33Kn
11m
33Kn
1/2W
R3
15Kn
11m
15Kn
11m
15Kn
11m
Rp
12Kn
m
12Kn
m
12Kn
m
cs
o.l~F
200V
o IjJF
400V
o IjJF
400V
RS
,oon
11m
l00H
11m
'OOn
11m
CF
01'"
200V
o l~F
400V
" IjJF
400V
'''''''''
200jJH
200jJH
TRIAC:
(SEE
TABLEl,
AS
I
7----
PHOTOCEL
CONTROL
SNUBBER
NETWORK
RFI
FIL TEA
LF
RCA TRIACS
MOUNTING
Mounting
off-stiJte voltage,
age showing reference points for definition of turn-on time (rgt).

AC INPUT
VOL TAGE
ReA
between
2N5567 2N5568 2N556B

2N5569 2N5570 2N5570
T412lB T4121D T4121D
CONSIDERATIONS
of
press-fit
package
types
depends
upon
an
sink.
The
insertion
tool
should
be a hollow
shaft
having an
interference
fit between the thyristor
case and the heat sink.
As the thyristor
is forced into the heat-sink hole, metal from
inner diameter
of 0.380 O.OlD in (9.65 0.254 mm) and
an outer
diameter
of 0.500
in. (12.70
mm).
These
the heat sink flows
into the knurl voids of the thyristor
dimensions
The
contact
resulting
thyristor
close
case assures
low thermal
A recommended
mounting
press-fit
and
knurl
between
the
sink
and electrical
method,
heat-sink
heat
hole
shown
case.
and the
resistances.
insertion
below
center
the
maximum
A slight chamfer
dimensions.
and guide the press-fit
allowable
insertion
in the heat-sink
package
that
provide
no direct
sufficient
force
clearance
for
will be applied
the
leads
and
to the glass seal of
the thyristor.
in Fig. 17, shows

If
these
dimensions
are maintained,
a "worst-case"
condition
of
0.0085 in_ (0.2159
mm) interference
fit will allow press-fit
800 pounds.
assure
properly
force
of
hole will help

into the heat
The
press-fit
package
is not
restricted
to a single
mounting
arrangement;
direct soldering and the use of epoxy adhesives
have been
successfully
employed.
The press-fit
case is
tin-plated
to facilitate
direct soldering to the heat sink_ A
60-40 solder should be used and heat should be applied
only
~~g~;~~)OIA
b1
800
LB
Table I - Case-to-Heat Sink Thermal Resistance for Different Mounting Arrangements.
MAX.
0.125
COPPER OR ALUMINUM
0.4960
0.4940
ResistanceoelW
Press-fitted into heat sink. Mini

mum required thickness of heat
sink:
1/8 in. (3.17 mm).
(60-40 solder which has a melting point of 1880 C should be
used. Heating time should be
freelyl.
Press-Fit
.-
Thermal
Type of Mounting
Employed
Package
(3.171
(122
(12.54)
Stud &
IsolatedStud
Ojrectly mounted on heat sink

Stud

0.004 to 0.006 in. (0.102 to
0.152 mm) thick mica insulating
0.5
0.1 to 0.35
0.6
washer used between unit and
IiEAT SINK
heat sink.
Without
heat sink compound
2.5
1.5
DIMENSIONAL
OUTLINE
2N5567,2N5568,
FOR TYPES
DIMENSIONAL
OUTLINE
2N5569,2N5570,
T4101M
INSULATING
MATERIAL
-~
REFERENCE
POINT FOR CASE
TEMPERATURE
MEASUREMENT
TER~MINAL
Nol
TERMINAL
/N02
J':.OI
I------
MI
E"
INCHES
A
D
Ol
O2
MAX.
.380
.510
.505
.475
.501
.465
M
t/JT
t/JTl
.058
.080
.750
.155
.068
.090
MilLIMETERS
MIN.
MAX.
9.65
12.95
12.83
12.07
19.05
3.94
1.73
2.29
12.73
11.81
1.47
2.03
NOTES
A
Ol
E
F
J
M
N
t/JT
t/JTl
W
--
INCHES
SYMBOL
MIN.
IF
/1
SYMBOL
FOR TYPES
T4111M
MIN.
MAX.
.330
.422
.505
.544
.562
.200
.950
.155
.453
.058
.080
.2225
.068
.090
.2268
.544
.113
NOTE 1: Contour
is optional.
MilLIMETERS
MIN.
MAX.
8.4
12.8
13.81
14.23
5.08
24.13
3.94
11.50
1.73
2.29
5.760
13.82
2.87
10.72
1.47
2.03
5.652
NOTES
of these terminals
NOTE 2: Pitch diameter of 1/4-28

(ASA 81. 119601.
UNF-2A (coated) threads

DIMENSIONAL OUTLINE FOR TYPES

T4121B, T4121D, T4121M
INCHES
SYMBOL
A
1>0
In the United Kingdom, Europe, Middle East, and Africa, mounting

hardware policies may differ; check the availability of all items
shown with your ReA salesrepresentative or supplier.
Fig. 18 - Suggested mounting arrangement

isolated-stud package types.
for stud and
1>01
E
F
J
M
Ml
N
1>T
.pTl
1>T2
I/1N
MilLIMETERS
MIN.
MAX.
MIN.
MAX.
.673
.614
.505
.557
.185
1.055
.155
.210
.452
.068
.090
.148
.2268
15.34
12.72
13.99
4.44
-
17.09
15.59
12.82
14.14
4.69
26.79
3.94
5.33
11.48
1.73
2.29
3.75
5.760
.604
.501
.551
.175
.200
.422
.058
.080
.138
.225
5.08
10.72
1.47
2.03
3.50
5.652
NOTES
2
2
2
3
WARNING:
The RCA isolated-stud package thyristors shou Id be handled with care. The ceramic portion of these thyristors contains BERYLLIUM
crush, grind, or abrade these portions of the thyristors because the dust resulting from such action may be hazardous
if inhaled.
TERMINAL
CONNECTIONS
Terminal No.1-Gate
Terminal No.2-Main
Terminal 1
Terminal 2

beryllium oxide,
is optional.
OOCD5LJD
Thyristors
T4103 T4104 T4105
T4113 T4114 T4115
Series
Solid State
Division
-6,10, & 15-A Silicon Triacs
400-Hz,

For 115-V Line Operation - T4103B
T4105B
T4114B
For 208-V Line Operation - T4103D
T4105D
T4114D
et\Iumbers
T4103 Series
T4104 Series
T4105 Series
T4113 Series
T4114 Series
T4115 Series
in
parentheses
(e.g. 40783)
are former
(40783)-, T4104B (40779)-,

(40775)-, T4113B (40785)-,
(40781)-, T4115B (40777)(40784)-, T4104D (40780)-,
(40776)-, T4113D (40786)-,
(40782)-, T4115D (40778)ReA
type
numbers.
Features:
RMS On-State Current IT(RMS) = 6 A: T4105B, T4105D, T4115B, T4115D

10 A: T4104B, T4104D, T4114B, T4114D,
15 A: T4103B, T4103D, T4113B, T4113D
di/dt Capability = 150 A//ls
Commutating dv/dt Capability
Shorted-Emitter Center-Gate Design
Characterized at 400 Hz
These ReA triacs are gatecontrolled fullwave silicon ac
V RMS sine wave and repetitive peak off state voltages of
switches.
200 V and 400 V.
The devices are designed to switch from an offstate to an
These triacs exhibit commutating voltage (dv/dtl capability
onstate for either polarity of applied voltage with positive or
at high commutating current (di/dt). They can also be used
negative gate triggering voltages.
in 60Hz applications where high commutating capability is
required.
They are intended for operation up to 400 Hz with resistive
or inductive loads and nominal line voltages of 115 and 208
MAXIMUM RATINGS.AbsoluteMaximum
l'aluc.c
For Operatiun H";tl1 Sinusoidal SUPP/l' Volla~e o{ Frequendes
I"duel;"e Luau.
REPETITIVE
PEAK OFF-8TATE
G,le open. TJ = 50 10 100('
lip
1(1
-IO(J Hz DUel \\'itll Rcsi\{il'e
VOLTAGE:'
T4103B T4113B
T4104B T4114B
T4105B T4115B
or
VDM
OF ON-8TATE
= VDROM.
ICT
See Fig.
200
100
di)dl
(SceFig.
iJl
Opera ling
150
A/"s
4 .
IGTM
:=;4 A.
See Fill. 7)
PGM
PG(AV)
16
0.2
RANGE:
Storage
TERMINAL
Ts1g
T('
((""").
TEMPERATURE
(Duri'l!
A
A
See Fig. 4
CURRENT:'
Fig. 7) .

PEAK (For I ." max .. IGTM
AVERAGE
TEMPERATURE
Ir = 0.1 ,l<
A
A
]
ITSM
CURRENT:
=160mA.
6
10
15
400 Hz hinu\oidal)
60 Hz ('\inu\oidal) ..
For more than one l'ydc of applied prim:ipal voltage
RATE-QF-CHANGE
T4105D
T41130
T41140
T4115D
VOROM
RMS ON-8TATE
CURRENT
(Conduction
angle
360):
Ca,c tempcT3ture
0
Te = 90 e (T4105B, T4105D, T4115B, T4115D)
= M50e (T4104B, T4104D, T4114B, T4114D)
= MOoe (T4103B, T4103D, T4I13B, T4113D)
for other l'ondition,
ON-8TATE CURRENT:
For one l'Yl'lc of applied principal voltage
PEAK GATETRIGGER
For I ,l< m" .. (See
T4103D
I T4104D
-50 10 150
50 10 100
w
0('
0('
""ldeTing):
For 10'\ ma'. (terminals and case)

For either polarity of gate voltage (VG) with reference to main terminal I .
. For temperature measurement reference point, see Dimensional Outline.
TT
225
LIMITS
ALL TYPES
SYMBOL
CHARACTERISTIC
Min.
Typ.
UNITS
Max.

Gate open, TJ = 1000C, VDROM = Max. rated value.
IDROM
01
mA

For iT = 21 A (peak), TC = 25 C.
VTM
1.4
18
IHO
20
75
mA
DC
Holding Current:'
Gate open, Initial principal current = 500 mA (DC), vD = 12 V,
TC=250C
See Fig. 6

For vD = VDROM, IT(RMS) = rated value, gate unenergized, (See Fig. 14):
Commutating di/dt = 21.4 Alms, TC = goo C
T4105B, T4105D, T4115B, T4115D
Commutating di/dt = 36 Alms, TC = 85 C
T4104B, T4104D, T4114B, T4114D
10
10
10
dv/dt
30
150
IGT
20
20
35
35
50
50
80
80
dv/dt
V/}.'S
Commutating di/dt = 533 Alms, TC = 80 C

T4103B, T4103D, T4113B, T4113D
Rate-of-Rise of Off-State Voltage:'
For vD = VDROM, exponential
vol tage rise,
gate open, TC = 1000 C
Critical
DC Gate-Trigger Current:'t
For vD = 12 V (DC),
RL = 30 n. and
TC = 25 C
For
other
case
other
1+
1111III +
VMT2
VG
---
positive
negative
positive
negative
positive
negative
negative
positive
temperatures.
DC Gate-Trigger Voltage:'t
For vD = 12 V(DC), RL = 30n.
For
Mode
mA
See Figs 8 & 9

TC - 25C.
VGT
case temperatures.
For vD = VDROM, RL = 125~l
V/}.'S
Je
TC = 100C
1
2.5
Fig. 10
02
1.6
25

For vD = VDROM, IGT = 160mA, tr = 0.1 }.'S,
iT = 25A (peak), TC = 250C. (See Figs. 11 & 15)
tgt
}.'S
Thermal Resistance
Steady-State (Junction-to-Case)
Transient
8J-C
(Junct ion-to-Casel.
Steady-State (Junction-to-Ambient).
See Fin
8J-A
C/W
33
C/W
12
25
3:
....
..~.
z
0
0::
20
it
i2is
15
'"li
:i'
w
'g"
10
"
o
10
FULL-CYCLE
RMS
15
ON-STATE
20
CURRENT
25
30
[ITlRMS1J-
92LS-2139R2
r----,;:C"U;;CRR;;;E;;;N:;;T;-W~
V:;;E"FC;;O:;;P.-;;M;-'
7;5;;'
N"'U"'5:;;0"IO"."L---r--------,
LOAD:
RESISTIVE
OR INDUCTIVE
CONDUCTION
ANGLE = 360
CASE TEMPERATURE:
MEASURED
AS
OUTLINES
,'-'-
-1
11/-1\j8r 8m1
w'-'
<n.
180'
,JJ360'
w'-'
-'!::
al
100
CONDUCTION
w
-'o~...
,"",
ANGLE
<8r +8m
..J<90
",
"'W
~Q.
:::i~80
x ...
'"
60
FUL~
200
CYCLE
RMS ~N-STATE
SUPPLY fREQUENCY: 60/400 Hz

LOAD
RESISTIVE
RMS ON-STATE CURRENT [1T(RMSI}
RATED VALUE AT SPECIFI ED TEMP
92C5-17055
..
468
10
CURRENT
[IT(R~SiJ-A
-lIDO :::
.~....-~
GATE CONTROL
MAY BE LOST
DURING
AND IMMEDIATELY
fOLLOWING
SL:RGE CURRENT
INTERVAL.
UNTil
JUNTION TEMPERATURE
HAS RETURNED TO STEADY-STATE
RATED
VALUE
SURGE
CU~ORENT
468
100
DURATION-FULL
loao
CYCLES
92CS-17056
INSTANTANEOUS ON-STATE VOLTAGE IVTI-V

I POSITIVE OR NEGATIVE 1
TRIGGERING
MODES: ALL
ENCLOSED
AREA INDICATES
LOCUS OF POSSIBLE TRIGGERING
POINTS
0.1
DC
GATE TRIGGER CURRENT {IGTl-A

(POSITIVE
OR NEGATIVE
92CS-17058
determination
of permissible gate trigger pulses.
92CS-17059
Fig.
8 - DC gate-trigger current vs. case temperature.

(/+ & 11/- modes).
..
E
~
~
0-
~ 200
o
'"
~
150
'"
...
H3
... '"
0->
'"
..
z-
0-
100
'"o
!;<
'oo"
,;
z
>
0-
50
"'~
-SO
-25
CASE TEMPERATURE (TC)--C
'"z
100
,-
I!
",,,,
... ~
~~
BO
"'I
:;; ...
60
!i
>/",
~~
... ~
zl
",0
/
4
u'l
"'z
"'0
0."
20,...-
"l
468
468
10-3
TIME
AFTER
468
10-2
10-1
APPLICATION OF RECTANGULAR PCY'NER PULSE -SECONDS

92LS~2407RI
I
I
I
I
I
----r----'
I
I
VD
I
I
I COMMUTATING
I-dildl
DJ-----------------
I
I
1-
COMMUTAT:NG
di/dl
I
I
I
T
I
I
I
I
I
CQMMUTATING-d ~/dt
Fig. 14 - Relationship between supplV voltage and principal current

(inductive load) showing reference points for definition of
commutating voltage (dv/dtJ.
Vo
I
I
I
I
o_L~
LL __
I-rl:
I
I
I
I"'"
In I
0-.l~1 __
RCA
TRIAC
POINT
f---'Q'
--i
,1- ~
"GT
100 n
1/2 W
LF
CF
I I
SNUBBER
NETWORK FOR
INDUCTIVE
LOADS OR WHEN
COMMUTATI NG VOLTAGE (dv/dt)
CHARACTERISTIC
IS EXCEEDED.
f-----J
-i---L-t,
r----l
I
I
I-l---
~'d
90%
RFI FILTER
r-----,
.--IO'fo
POINT
o_L - --------
92CS-13366R2
Fig. 15 - Relationship between off'stare voltage, on-state current,

and gate-trigger voltage showin~ reference points for definition of turn-on time (tgt).
Mounting of press-fit package types depends upon an
center and guide the press-fit package properly into the heat
interference fit between the thyristor caseand the heat sink.

the heat sink flows into the knurl voids of the thyristor case.
The resulting close contact between the r:eat sink and the
sink. The insertion tool should be a hollow shaft having an
thyristor
A recommended mounting method, shown in Fig. 17,

shows press-fit knurl and heat-sink hole dimensions. If these
dimensions
are maintained,
a "worst-case"
condition
of

inner diameter of 0.380

an outer
diameter
O.ClO in. (9.65
0.254 mm) and
of 0.500 in. (12.70 mm). These di-
mensions provide' sufficient clearance for the leads and assure

that no direct force will be applied to the glass seal of the
thyristor.
The
press-fit
package is not
restricted
to
a single
mounting arrangement; direct soldering and the use of epoxy

adhesives have been successfully employed. The press-fit case
is tin-plated to facilitate direct soldering to the heat sink. A
Table 1 - Case-to-Heat Sink Thermal Resistance for Different

Mounting Arrangements.
Type of Mounting
Package
Press-Fit
.125(3.17)
______
---.1r
.4976 (l2.6~
.4974112.6331
Employed
Thermal
Resistance-oC/W
Pressfitted
into heat sink.
(Minimum
Required
thickness
of heat sink = 1/8 in.
0.5

(60-40 solder which has a melting point of 1880 C shou!d be
used.
Heating
time should
be sufficient
to caus~ solder
to flow freely).
0.1 to 0.35
Directly
mounted on heat sink
with or without the use of heatsink compol:nd.
0.6
COPFR OR ALlIlilIlNUM HEAT SINK
Stud
Mounted on hea~ sink with a

I'tlica
0.004 to 0.006 in. thick
insulating
washer used between unit and heat sink.
2.5
1.5
In the United Kingdom, Europe, ,Middle East, and Africa, mountinghardware policies may differ: check the availability
of all items
wIth your ReA sales representative
or supplier.
shown
DIMENSIONAL
OUTLINE
DIMENSIONAL
FOR
REFERENCE
POINT FOR CASE
t:'.m:~~~~ERM~N::m~~~~~
4P
No.1
-17
1.
qp:j:,
~
TERMINAL
"D,
D,
J
M
",T
" T,
I--
501
465
058
.080
"~'~."
==oj-
MIN
1,
...
965
1295
12.83
12.07
19.05
3.94
173
2.29
147
2.03
Ollentatlon
NOTE 2: Outer diameter of knurled
1----.01
SUI
NOTES
MAX.
1273
1181
-
380
510
.505
.475
.750
.155
068
.090
IS
II
~E
.wr
"W
MIN.
330
544
113
-
422
058
.080
.2225
MI
REFERENCE
-POINT
FOR CASE
TEMPERATURE
MEASUREMENT
--
.T,
-A
-f'
. J
INCHES
SYMBOL
A
D,
E
F
J
M
N
T
",T,
of these terminals
face.
/NO
4P
>--A--1
~---I
MILLIMETERS
MAX.
NOTE 1: Contour and angular

optional.
INCHES
MIN.
A
D
.T
FOR
--
No I
1.
No.2
SYMBOL
INSULATING
MATERIAL
TERrN~I~AL
02
.0 -J
OUTLINE
T4113, T4114, AND T4115SERIES
T4103, T4104, AND T4105 SERIES
MAX.
505
544
562
200
.950
.150
453
.068
.090
2268
SEATING
PLANE
MILLIMETERS
MIN.
MAX.
12.8
1381
1428
5.08
24,13
3.94
1150
173
2.29
5.760
8.4
1382
2.87
-
1072
147
2.03
5.652
NOTE 1: Contour and angular orientation

IS optional.
NOTES
3
1
of these terminals
2: Pitch diameter of ',028 UNF2A (coated) threads

(ASA B1. 1-1960).
NOTE
NOTE 3: A chamfer
pOItioo is optional.
or undercut
on one or both ends of hexagonal
Terminal No. I-Gate

Terminal No.2-Main Terminal I
Case, Terminal No.3-Main Terminal 2
On special request, isolatedstud package triacs are also

available.
[Kl(]3LJD
Solid State
Division
Terminall
Main
Terminal
T6401
Main
Main
Terminal
Main
Terminal
T6401 T6411 T6421

Series
Press-Fit, Stud,
f"I
.....
and
Isolated-Stud Type Packages
For 120-V Line Operation - T6401 B (40660)*, T6411 B (40662)*,

T6421B (40805)*
For 24D-V Line Operation - T6401D (40661) *, T6411D (40663)*,
T6421D (40806)*
For High-Voltage Operation - T6401M (40671)*, T6411M (40672)*,
T6421M (40807)*
Series
Main
Terminal
Main
Terminal
T6411 series
T6421
Series
Press-fit
Isolated-stud
Stud
These RCA triacs are gate-controlled
Features:
di/dt Capability = 100 Alils
Shorted-Emitter
Low Switching Losses
Center-Gate Design

Current Levels
full-wave silicon ac
These triacs are intended for control of ac loads in applica-
switches. They are designed to switch from an offstate to an
tions such as heating controls, motor controls, arc-welding
on-state for either polarity
equipment,
of applied voltage with positive
light dimmers,
and power switching
They can also be used in air-conditioning
systems.
and photocopying
equipment.

Values:
REPETITIVE
PEAK OFF-STATE
Gate open, T J ; -50
VOLTAGE:
to 1000 C
VOROM
T6401B
T6411B
T6421B
T6401D
T6411D
T6421D
200
400
T6401M
T6411M
T6421M
600
(Conduction angle = 3600):
Case temperature
TC; 650 C (Press-fit typesl
; 600 C (Stud typesl .
; 550 C (Isolated-stud typesl
ITIRMSI
30
30
_____
30
See Fig_ 3 ____
A
A
A
ITSM
For one cvcle of applied principal voltage
60 Hz (sinusoidal)
50 Hz (sinusoidal)
RATE-QF-CHANGE
VOM;
VOROM,
300
265
.
A
A
See Fig_ 4 ----
IGT;
PEAK GATE-TRIGGER
200 mA, tr ; 0.1 115 (See Fig_ 731 _ .
CURRENT:
For 1 J1smax.,See Fig. 7 .....

PEAK (For 1 Ils max., IGTM
-0::; 4 A: See Fig. 71 ...
",
..
, ..
-----
AVERAGE
TEMPERATURE
RANGE:
Storage
Operating (Case) .
TERMINAL
40 -----
------0.75-----
TEMPERATURE
. ..............
(During soldering):
For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal
For temperature measurement reference point, see Dimensional Outline.
1.
CHARACTE R ISTIC
Peak OffState Current:

Gate open, TJ = 1000 C, VDROM = Max. rated value
Maximum OnState Voltage:'
For iT = 10:) A (peakl. TC = 250 C
................
Gate open. Initial principal current = 150 mA (DCl. vD = 12V:
..............
..... . . ......
TC=250C
......
. ....
.... .
Critical Rate-ofRise of Commutation
Voltage:.
For VD = VDROM, 'T(RMS) = 30 A,commutating
(See Fig. 14):
di/dt
= 16 Alms, gate unenergized,
.....
. ..........
TC = 650 C (Press fit types)
........
. ..........
= 600 C (Stud types)
..............
= 550 C (lsolatedstud types)
Critical Rate-of-Rise
of OffState
SYMBOL
Min.
Tvo.
Max.
IDROM
0.2
VTM
2.1
2.5
IHO
60
mA
Mode
1+
111I'
111+
.....
3
3
3
20
20
20
40
25
20
200
150
100
15
20
30
40
See Figs. 8 & 9
50
50
80
80
dv/dt
VMT2
dv/dt
mA
V/lls
V/lls
VG
positive
positive
negative
negative
positive
negative
negative
positive
IGT
.. . .. . . ........
Gate-Controlled
Turn-Gn Time:
For vD = VDROM, IGT = 200 mA, tr = 0.1 IlS.
iT = 45 A (peak), TC = 250 C (See Figs. 11 & 15)
Resistance,
25
See Fig. 6
DC GateTrigger Voltage:'.
For VD = 12 V(DCl. RL = 30 n,
.
. .......
TC = 250 C .... ............
For other case temperatures ........
. . . ... .
For VD = VDROM, RL = 125 n, TC = 1000 C
Thermal
UNITS
Voltage:'
For VD = VDROM, exponential voltage rise, gate open,

TC = 1000 C:
..........
. ... . ...
T6401B,T6411B.
T6421B
T6401D, T6411D. T6421D
. .. ..... . .......
.....
. ...
T6401M, T6411M. T6421M
For vD = 12 V (DC),
RL =30 n,
TC = 250 C
LIMITS
For All Types
VGT
0.2
..
tgt
1.35
2.5
See Fig . 10
mA
1.7
0.8
0.9
IlS
Junction-ta-Case:
Steady-State
Pressfit types
............
...... . ...... .
Stud
... . .............
. ...... .......
.
Transient (Press-fit & stud types I .. ..... . .......
. .
Thermal Resistance. JunctiontoHex
(Stud. See Dim. Outline):
Steady-State
(Isolated-stud typesl .....
.... . .......
For either polarity of gate voltage (VG) with reference to main terminal
J-C
oc/w
See Fig. 12
0JIH

1.
1.
CURRENT
WAVEFORM:
SINUSOIDAL
LOAD: RESISTIVE
OR INDUCTIVE
CONDUCTION
ANGLE
360
50
QUADRANT
No.1
MAIN TERMINAL
POSITIVE
-ON
STATE
IHO
10
20
FULL-CYCLE
RMS
30
40
ON-STATE
~o
CURRENT
60
[IT(RMSI]-A
9255-3810
WAVEFORM ~SINUSO IDAL

LOAD: RESISTIVE
OR INDUCT IVE
CONDUCTION
ANGLE"
360
CASE TEMPERATURE:
MEASURED
~ t8I~ 8ml
Ii :
1 fURRENT
i'
AS SHOWN ON DIMENSIONAL
OUTUNES
...
180
~IOO
CONOUCTION
"
~
90
ANGLE
'Sr +Sm
i'...!i
60.
PRESS-FIT
80
..."'
.\.
250
~1 "
~f
a:~
II IT

DURING AND IMMEDIATELY FOLLOWING
...
60,Hz
15
~i
70
AT
IIIIII1
~
~200
STUD TYPES
[InRMS)]-30A
300
TYPES
"'.:
~

r'"
~Ol
ISOLATED-STUD
60
~
~ 50
TYPES
><
o
FULL
10
CYCLE
20
RMS ON-STATE
30
CURRENT
[IT(RMS1]
40
""'
Q.
-A
68
468
SURGE
CURRENT
102
10
92SS-3812R2
DURATIO"-J -FULL
CYCLES
Fig. 4 - Peak surge on-state current vs.

surge current duration.
0.5
INSTANTANEOUS
(POSITIVE
1.5
ON-STATE VOLTAGE
OR NEGATIVE)
20
-70 -60 -50-40 -30 -20 -10
CASE TEMPERATURE
2,5
(vTl-V
Fig. 5 - On-state current vs. on-state

voltage.
10 20 30
(TC )_OC
9255-3811

temperature.
~03
92SS-3815R2
40
I
RING MOO ES: ALL
1008 ENCLOSED AREA INDICATES LOCUS OF
6
I E TRI
RIN
I T
4

permissible gate trigger pulses.

temperature (1+ & 11/-modesl.
o
-70 -60 -50 -40 -30 -20
CASE
-10
10
TEMPERATURE
20
30
40
-70
-60
-so
-40 -30 -20
(TCI-OC
CASE

temperature (1- & 11/+modesl.
-10
TEMPERATURE
10
20
30
40
(TC)_OC
Fig_ 10 - DC gate-trigger voltage vs. case

temperature.
"'Uz 100
"'~
~~
1-'
>-<l
I I
1,
;"1'"
II
80
V
/'
0:>
~ffi
0-:<
"'0-
60
"-"'<l
0",
/'
,/
o-U
z,
"'0
Uo-
40
cr'
"'z
"-0
E;
20
---I
I
~
0
50
100
ISO
200
250
300
350
400
468
450
10-3
DC GATE-TRIGGER
CURRENT
(IGT)-mA
TIME
AFTER
APPLICATION
10-2
OF
468
RECTANGULAR
10-1
468
I
POWER PULSE -SECONDS

92LS-2263RI
TL
J----------------,
/--d1/dt
0---
~Es~-_~
~
r--"
Fig. 14 - Relationship
between supply voltage
age shoWing reference points for definition of rum-on time (fgt).
AC INPUT
VOLTAGE
'20V
60
2AOV
60
NOV
50'"
C,
O.ljlf
200V
0.'1'f
4001/
O.ljlf
400V
c2
O.ljlf
lOOV
0.11'f
l00v
0.11'f
l00V
,,
Al
l00Kfl
1IZW
200Kfl
IW
250Kfl
lW
, Cs
,,
A2
2.2Kfl
1IZW
3.3Kfl
1IZW
A3
15K{l
1IZW
15Kfl
112W
15Kn
1IZW
O.ljlf
200V
0.11'f
400V
O.ljlf
400V
ReA
TRIAC
ISEE
RS
Lf __
..J
-.J
Cs
SNUBBER
NETWORK
LOADS
DR WHEN
FOR
INDUCTIVE
COMMUTATING
(ctv/dtl CHARACTERISTIC
VOLTAGE
SNUBBER
NETWORK
IS EXCEEDED.
ACATRIACS
3.3Kfl
1IZW
AS
,oon
1IZW
loon
1IZW
,oon
1IZW
CF
O.ljlf
200V
0.11'f
400V
O.ljlf
400V
LF
IlJ01lH
P<-'
200jJH
T64010
T64110
T64010
T64110
T6421 0
T6421 0
AFI
FILTER
MOUNTING
between off-state voltage,
on-state current, and gate-trigger vo/t-

of commutating voltage (dv/dr).
,,
TABLE)I
Fig. 15 - Relationship
and principle current (inductive load)
T64018
T64118
T64218
CONSIDERATIONS
Mounting of press-fit package types depends upon an interference fit between the thyristor case and the heat sink.
As the thyristor is forced into the heatsink hole, metal from
center and guide the press-fit package properly
into the
heat sink. The insertion tool should be a hollow shaf:t having

and an outer diameter of 0.500 in. (12.70 mm). These di
case. The resulting close contact between the heat sink and
the thyristor case assures low thermal and electrical resis-
mensions provide sufficient clearance for the leads and

tances.
of the thyristor.

shows press-fit knurl and heat-sink hole dimensions. If these
The pressfit package is not restricted to a single mounting arrangement; direct soldering and the use of epoxy adhesives have been successfully employed. The pressfit case
is tin-plated to facilitate direct soldering to the heat sink. A
dimensions
are maintained,
a "worst-case"
condition
of

800 pounds. A slight chamfer in the heatsink hole will help
Thermal
ResistanceoeM
Type of Mounting
Employed
Package
Pressfitted into heat sink. Mini

mum required thickness of heat
sink:
1/8 in.13.17 mm)
Press-Fit
Stud

(60-40 solder which has a melt
ing point of 1880 C should be
freelvl.
0.5
0.1 to 0.35
Directly mounted on heat sink

with or without the use of heat
sink compound.
0.6
92 LS- 2264R3
NOTE: Dimensions in parentheses are in millimeters

from the basic inch dimensions as indicated.
DIMENSIONAL
T6401 SERIES
OUTLINE
and are derived
FOR
DIMENSIONAL
T6411 SERIES
OUTLINE
INCHES
SYMBOL
INCHES
SYMBOL
A
O
OI
O2
J
M
T
Tl
MAX.
.380
.510
.505
.475
.501
.465
.058
.080
NOTE 1: Contour
is optional.
NOTE
MILLIMETERS
NOTES
MIN.
.750
.155
.068
.090
MIN.
MAX.
1.47
9.65
12.95
12.83
12.07
19.05
3.94
1.73
2.03
2.29
12.73
11.81
of these terminals
2: Outer diameter of knurled surface.
A
OI
E
F
J
M
N
T
Tl
rpW
FOR
MILLIMETERS
NOTES
MIN.
MAX.
.330
.505
.544
.562
.200
.950
.155
.453
.068
.090
.2268
.544
.113
.422
.058
.080
.2225
MIN .
MAX.
8.4
12.8
13.81
14.28
5.08
24.13
3.94
11.50
1.73
2.29
5.760
13.82
2.87
10.72
1.47
2.03
5.652
NOTE 2: Pitch diameter of 1/4-28 UNF2A Icoatedl threads

IASA 81. 11960l.
l-"",,".,,"
cv--DF6B
MICA
INSULATOR
DIMENSIONAL
T6421 SERIES
OUTLINE
111 P'iBI'SHED
In the United Kingdom, Europe, Middle East, and Africa. mountinghardware policies may differ; check the availability of all items
shown with your ReA salesrepresentative
or supplier.
INCHES
SYMBOL
A
4>0
4>01
WARNING:
The RCA isolatedstud package thyristors should be han
died with care. The ceramic portion of these thyristors con
tains BERYLLIUM
crush, grind, or abrade these portions of the thyristors be
cause the dust resulting from such action may be hazardous
if inhaled.
TERMINAL
FOR
.""",,,,,,'"""
AVA'LA8lE
CONNECTIONS
F
J
M
Ml
N
4>T
Tl
4>T2
1JN
MILLIMETERS
MIN.
MAX.
.604
.501
.551
.175
.673
.614
.505
.557
.185
1.298
.230
.210
.452
.068
.165
.148
.2268
.210
.200
.422
.058
.125
.138
.2225
MIN.
MAX.
17.09
15.59
12.82
14.14
4.69
32.96
5.84
5.33
11.48
1.73
4.19
3.75
5.760
15.34
12.72
13.99
4.44
5.33
5.08
10.72
1.47
3.18
3.50
5.652
NOTE 1: Ceramic between hex (stud) and terminal

beryllium oxide.
NOTE 2: Contour and angular orientation
is optional.
Terminal No.1-Gate
Terminal No.2-Main
Terminal 1
Terminal 2
NOTE 3: Pitch diameter of
IASA B1. 119601.
NOTES
2
2
2
3
No.3 is
of these terminals
1/428 UNF-2A (coated) threads
Thyristors
[lliCIBLJD
Solid State
Division
T6404 T6405
T6414 T6415
Series
J.i
For 115-V Line Operation - T6404B

T6414B
For 208-V Line Operation - T6404D
T6414D
Gate
(40791)(40793)(40792)(40794)-
T6405B
T6415B
T6405D
T6415D
(40787)(40789)(40788)(40790)-
Features:
RMS On-State Current

IT(RMS) = 25A: T6405 and T6415 Series
= 40A: T6404 and T6414 Series
di/dt Capability = 100 A/ps
Commutating
dv/dt Capability Characterized
These
ReA
switches.
onstate
They
are
are
polarity
gate triggering
intended
inductive
MAXIMUM
gate-control!ed
are designed
for either
or negative
or
triacs
They
to switch
silicon
of applied
voltage
with
ac
and
nominal
positive
These
triacs
exhibit
at high commutating
at 400
Hz with
line voltages
of
resistive
115
com mutating
current
in 60Hz applications
is required.
and
Design
at 400 Hz
Values:
For Operation with Sinusoidal Supply Voltage at 400 Hz and with Resistive or Inductive Load.
REPETITIVE PEAK OFFSTATE VOLTAGE:'
vDROM
Gate open, T J = -50 to "0 C
. ........
RMS ONSTATE CURRENT (Conduction Angle = 3600):
IT(RMS)
Case temperature
TC
Center-Gate
208 V RMS sine wave and repetitive

of 200 V and 400 V.
to an
voltages.
for operation
loads
full-wave
from an off-state
Shorted-Emitter
peak off-state
voltage
(di/dt).
where
high
(dv/dt)
They
voltages
capability
can also be used
commutating
T6404B
T6405B
T6414B
T6415B
capability
T6404D
T6405D
T6414D
T6415D
200
400
= 85 C IT6405 Series)
25---
800 C (T6415 Series)

25---
A
A
A
40--40-----
See Fig.3 --
ON-STATE CURRENT:

400 Hz (sinusoidal)
60 Hz (sinusoidal)
RATE-OF-CHANGE OF ON-STATE CURRENT:
---600------300---
---
= -50
to 1100 C, t
See Fig.4--
----100---
VDM
VDROM, IGT
200 mA, tr
0.1 !'s (See Fig. 15)
TJ
A
A
AI!'s
2
A s
----350---
1.25 to 10 ms
PEAK GATE-TRIGGER CURRENT:"

For 1 J.l.s max. (See Fig. 7)
12---

Peak (For 10!'s max., IGTM :<:;:4A (peak), (SeeFig. 7) .,
Average
..
.
.
TEMPERATURE
Storage
Operating
TERMINAL
42---
0.75 ---
RANGE:"
(Case)
.
.
..
TEMPERATURE
For 10 s max.
*
----
(terminals
---50to150--
--
-50
C
to 110 --
225 ----
(During soldering):
and case)
..
----

For either polarity of gate voltage (VG' with reference to main terminal 1.
.. For temperature
measurement reference point. see Dimensional
Outline.
1.
At Maximum Ratings and at Indicated Case Temperature (Tc) Unless Otherwise Specified
LIMITS
SYMBOL
CHARACTERISTIC
For All Types

Unless Otherwise
Specified
Typ.
Max.
0.2
1.7
1.7
2.5
2
Min.
Gate open, TJ = 1100 C, VDROM = Max. rated value ...............
For iT = 100 A (peak), TC = 25v C:
T6405 & T6415 Series .... . ...... .
T6404 & T6414 Series ... . ... .....
IDROM
..........................
.....................
- ....
Gate open, Initial principal current = 500 mA (DC), vD = 12 V,
TC = 250 C .............................................
...............................
VTM
IHO
30
See Fig.6
2
2
2
2
30
50
150
200
90
UNITS
mA
mA

For vD = VDROM, IT(RMS) = rated value, gate unenergized,
(See Figs.13 & 14):
Commutating d ildt = 88 Alms
TC = 850 C (T6405 Series) .............................
= 800 C (T6415 Series) .............................
Commutating d ildt = 141 Alms
TC = 700 C (T6404 Series) .............................
= 650 C (T6414 Series) . . . . . . . . . . . . . ................
Critical Rate-of-Rise of Off-State Voltage:'
For VD = VDROM, exponential voltage rise, gate open, TC = 1100 C:
T6405 & T6415 Series .... . ....... . .......................
T6404 & T6414 Series' .......
... . .......................
DC Gate-Trigger Current:'t
ForvD = 12 V (DC),
RL =30n,
TC = 250 C
Mode
1+
1111-
III +
VMT2
positive
negative
positive
negative
VG
positive
negative
negative
positive
dvldt
dvldt

For VD= VDROM, IGT = 150 mA, tr = 0.1 J-ls,
iT=60A (peak), TC= 250C (See Figs. 11 & 12) ..............
V/p.s
IGT
.................................
DC Gate-Trigger Voltage:'t
.....
For vD = 12 V(DC), RL = 30 n, TC = 250 C .................
For other case temperatures ................
. ...............
For vD = VD ROM, R L = 125 n, TC = 1100 C ....................
V/p.s
VGT
20
80
50
80
80
120
80
120
See Figs.8 & 9
-I
0.2
2
3
See Fig. 10
mA
tgt
, ...
Thermal Resistance, Junction-to-Case:

Steady-State
Press-fit types ...........................................
Stud ..................................................
Transient (Press-fit & stud types) ...............................
,
For either polarity of main terminal 2 voltage (VMT21 with reference to main terminal 1.
BJ-C
1.6
2.5
p.s
0.8
0.9
oC/W
See Fig.16
10
20
FULL-CYCLE
30
40
50
60
RMS ON-STATECURRENT(ITtRMS1]-A
92C5-
CURRENT WAVEFORM:
SiNUSOIDAL
LOAD:
RESISTIVE
OR INDUCTIVE
CONDUCTION
ANGLE
~ 360"
CASE
TEMPERATURE:
MEASURED
AS
OUTLINES
60
10
FULL
LOAD; RESISTIVE
RMS ON-STATE
CURRENT [ITIRMSJ}
SPECIFIED
CASE TEMP~RATURE
600
I
\
500
",I
>~
I"
'f z 300
"-
z'"
0'"
~~
~ u 200
~
"
I I II
OVERLOAD
MAY NOT BE REPEATED
UNTIL
JUNCTION
TEMPERATURE
HAS
RETURNED
TO STEADY-STATE
RATED VALUE.
'\
~!::
"' ....
I I
..........
"
"-
100
00
r-- t-
t-
I I
I I
a
I
6
SURGE
VALUE AT
GATE CONTROL
MAY BE LOST
FOLLOWING
SURGE CURRENT
INTERVAL
I\.
t:........~400
RATED
CYCLE RMS ON-STATE
CURRENT
8 10
DURATION -FULL
8 102
CYCLES
~
CURRENT
40
fiT(RMS~
L'
A
92C5-17949
17950
120
<t
E
OW
r>
100
~~
>-"
CJ~
a: a: 80
'50
u'"
,,~
z>-
9~
60
1-
u
o
MINIMUM GATE RESISTANCE

I
UPPER LiMIT OF PERMISSIBLE

AVERAGE IDC} GATE POWER I
DISSIPATION AT RATED CONDITIONS
-50 -40 -30 -20 -10 0

CASE TEMPERATURE
;0
20 30
tTC )_OC
40
92CS-17946
Fig. 9 - DC gate-trigger current vs. case temperature (/- & /:/+

modes).
I
VD
o_LL
I
I
1
1
1
1
:_L __
T
ITM
:
1
-iLl I"
o-LL-~
td
POINT
1-1----
-i..-l-I
f----
90%
tgt
t,
---I
t:vGT
0-
-..---10% POINT
---------92CS-13366R2

and gate-trigger voltage showing reference points for
---,
I
I
VD :VDROM
IT (RMSI:
RATED VALUE AT SPECIFIED
GATE
CASE TEMPERATURE
OPEN

commutating voltage (dv/dtJ.
w
u
z
100
w~
VD
~~
,.'"-'
0,"
~5
...
I
I
oj --- ------ --------
"' ....
80
60
"-w
0",
...
u
'"
Z
wo
u ...
Ir'
wz
"-0
~
10-2
10-3
TIME
AFTER
RFI FILTER
,----,
r----l
RCA
TRIAC
I
I
39
n
I W
1022~F
I 200V
/L
APPLICATION
I:
::
LF
CF
I I
I I
J L
10-1
OF RECTANGULAR
POWER
8
r
PULSE-SECONDS
92lS-2263RI
LOAD
:
:
I
I
SNUBBER NETWORK FOR

INDUCTIVE
LOADS OR WHEN
COMMUTATING
VOLTAGE
(dv/df)
CHARACTERISTIC
IS EXCEEDED.
Mounting of press-fit package types depends upon an inter-
center and guide the press-fit package properly
ference fit between the thyristor case and the heat sink. As
the thyristor is forced into the heat-sink hole. metal from
heat sink. The insertion tool should be a hollow shaft having

and an outer diameter of 0.500 in. (12.70 mm). These di-
into the
mensions provide
thyristor caseassureslow thermal and electrical resistances.

of the thyristor.
A recommended mounting method. shown in Fig. 18. shows

press-fit knurl and heat-sink hole dimensions. If these
The pressfit package is not restricted to a single mounting

dimensions
have been successfully employed. The pressfit case is tinplated to facilitate direct soldering to the heat sink. A 60-40
are maintained.
a "worst-case"
condition
of
0.0085 in. (0.2159 mm) interference fit will allow pressfit

insertion
below the maximum allowable insertion force of
sufficient
clearance for
the leads and
solder should be used and heat should be appl ied only long
Package
Type of Mounting
Employed
sink = 1/8 in. (3.17 mml
Press-Fit
Stud

(6040 solder which has a melting point of 1~80 C should be
used. Heatinq time should be
freely) .
with or v.'ithout the use of heatsink compound .
.125 \3.17)
-------.I-:~;~
:,'~~~~))D'A!
In the United. ~ingdom, E.urope, Middle East, and Africa, mountinghardware. policies may dIffer; check the availability of all items
Thermal
Resistance-oelW
0.5
0.1 to 0.35
0.6
DIMENSIONAL
OUTLINE
DIMENSIONAL
FOR TYPES
OUTLINE
FOR TYPES
T6414 & T6415 SERIES
T6404 & T6405 SERIES

REFERENCE
POINT FOR CASE
TEMPERATURE
MEASUREMENT
INSULATING
MATERIAL
~:"~:
REFERENCE
POINT fOR CASE
TEMPERATURE
r_A"3MEASUREMENT
TERMINAL
MILLIMETERS
INCHES
.01
~2
J
M
.T
.Tl
0.501
0.465
0.825
0.215
0.058
0.138
MAX.
0.380
0.510
0.505
0.475
1.000
0.225
0.068
0.148
MIN.
MAX.
9.65
12.95
12.83
12.07
25.40
5.71
1.73
3.75
12.73
'1.81
20.95
5.46
1.47
3.51
MILLIMETERS
INCHES
NOTES
SYMBOL
MIN.
SEATING PLANE
NO.2
NOTES
SYMBOL
.01
N
.T
.Tl

is optional.
oW
MIN.
MAX.
MIN.
0.330
0.505
0.544
0.562
0.200
1.100
8.4
0.544
0.113
0.950
0.215
0.422
0.058
0.138
0.2225
0.225
0.453
0.068
0.148
0.2268
13.82
2.87
24.13
5.46
10.72
1.47
3.51
5.652
MAX.
12.8
13.81
14.28
5.08
27.94
5.71
11.50
1.73
3.75
5.760
NOTE 2: Outer diameter of knurled surface.
NOTE 2: Pitch dIameter of 1/4-28 UNF-2A (coated) threads

(ASA B1. 1-19601.
TERMINAL
CONNECTIONS
No.1-Gate
No.2-Main
NOTE 3: A chamfer or undercut on one or both ends of

Terminal 1
Case,No.3-Main Terminal 2
Main Terminal
(-\.
Gate
~S.c.~
Main Terminal
On special request, isolated-stud

package triacs are also available.
11
WARNING:
The ReA isolated-stud package thyristors should be handled with care. The ceramic portion of these thyristors contains BERYLLIUM OXIDE as a major ingredient. Do not
crush, grind, or abrade these portions of the thyristors because the dust resulting from such action may be hazardous
if inhaled.
Thyristors
OOCTI3LJI]
T8401B
T8401D
T8401M
Solid State
Division
H-1812
H-1814
H-1813
MTl
MTl
MTl
For Phase-Control and Load-Switching
.....MT2
di!dt
MT2
/
(. Gate
T8411,
Low Switching
Losses
::s:
200 V
Design
Resistance
400 V
600 V
T8401M (41031)
Stud
T8411B (41032)
T8411D (410331
T8411M (410341
Iso-stud
T8421B (410351
T842lD
T8421M (410371
at High Current
Level,
(410361
Isolated-Stud
and
T8421
series
triacs
are
gate-
These
triacs
are intended
tions such
equipment,
for either
triggering
They can also
polarity of applied
voltages.
voltage
with positive
or negative
of ac loads in applica-
be used in air-conditioning
and photocopying
equipment
PEAK OFF-STA1E
for control
as heating controls motor controls,

arc-welding
light dimmers,
and power switching
systems.
Values:

up to 50160 Hz and with Resistive or Inductive Load.
REPETITIVE
Voltage
Low Thermal
T8401D (410301
controlled,
full-wave silicon ac switches with integral triggers.
They are designed to switch from an off-state to an on-state
MAXIMUM
Low On-State
T8401B (410291
Press-fit
T8421B
T8421D
T8421M
Stud
ReA T8401,
Center-Gate
Package
T8411B
T8411D
T8411M
Press-fit
= 300 A!lls
Capability
Shorted-Emitter,
MT2
T8401B
T840lD
T8401M
Applications
Features:
.;
Gate
T8421B
T8421D
T8421M
T8411B
T8411D
T8411M
T8401B
T8401D
T8401M
T8411B
T8421B
T8411D
T8421M
T8421M
T8421D
VOLTAGE:"
Gate open, T J = -40 to 110 C

.
RMS ON-STATE CURRENT (CondUCtIon angle
Case Tempelature
T C = 85 C (Press-Fit types) .
0
80 C (Stud types)
.
0
75 C IIsolated-Stud typesl
'0' .
= 360 I:
------------

ON-STATE CURRENT:
60 Hz (sinusoidal)
600 ----
-----500

RATE OF CHANGE OF ON-STATE CURRENT:
J"
----
----
60 ---See Fig. 3 ----
----
50 Hz (sinusoidal) ..
VDM = VDROM,IGT
= 300 mA, tr = 0.1
FUSING CURREN~ (for Triac Protection):
T J = -40 to 110 C, t = 1.25 to 10 ms
PEAK GATE-TRIGGER CURRENT:"
For 10 J.LS max. (See Fig. 7)
60 ----
-----60
-----
See Fig. 4 ----
(See Fig. 13)
GATE POWER DISSIPATION (See Fig. 7):

Peak (For 10 MS max., IGTM .;; 7 A (peak)
AVERAGE
TEMPERATURE
RANGE:"
Storage.
Operating (Case)
TERMINAL TEMPERATURE lOuring solderingl:
................
STUD TORQUE:
Recommended
Maximum
(DO NOT EXCEED)
For either polarity of gate voltage (V G) with reference to main terminal 1... For temperature measurement reference point, see Dimensional Outline.
LIMITS
For All Types
Except as Specified
SYMBOL
CHARACTERISTIC
MIN.
Peak Off-State
Current:-
Gate open,
V DROM
. ... . .. .
= Max. rated value
Maximum On-State Voltage:0

For iT = 100 A (peak). TC = 25 C
.....
... ......
. . . . .... . .....
.....
.. .....
MAX.
TYP.
IDROM
0.4
"TM
1.55
20
60
85
mA
VII's
......
........ .
DC Holding Current:Gate open, I nitial principal current:::: 500 mA (de)

<i,
.....
vD= 12V.TC=25
TC=-40C
...............
...
.....
Critical Rate-of-Rise of Commutation
UNITS
IHO
..... . ....
... ......
mA
1.8
See Fig. 6
VOltage:-
For vD = V DROM' IT(RMSI = 60 A, eommutating

di/dt
32 Alms,
TC
=-
75:C
gate unenergized.
(Press-fit
types)
= 65 C (Stud typesl
5SoC (Isolated-stud
Critical
Rate-ot-Rise
of Off-State
Current:-
voltage
1+
,-
,1,+
Mode
1+
,-
1111,,+
For other
case temperatures
TC
case temperatures
Gate-Controlled
Turn-On
(Delay Time
........
200
30
20
150
100
20
40
40
100
positive
negative
negative
negative
VMT2
VG
positive
negative
positive
negative
positive
negative
negative
positive
. . . . . . . . . . . . . . . ..
..........
...... .... .... .....

..... .... ..... ..... . . . . .
VII's
75
75
150
150
mA
'GT
35
80
100
280
150
150
400
400
See Figs. 8 & 9
. .......
VGT
. . . . . .. . . . .....
1135
See Fig. 10
2.8
2.5
I'S
Time:
tgt
.......
. . . . . . . . . . .. ...
1.2
Junction-to-Case:
......
.... .. . ..... ..... ..... . .. ..... ......
..... .... ...... '"
...... ..... .... ....
Isolated'stud
types
.... .... ... .. ...... ..... . .. ..... . .... ..... ..
Transient
(Press-fit & Stud types)
... ........
....
ReJC
of main terminal 2 voltage (VMT2)

of gate voltage (V G) with reference

to main terminal 1.
0.3
0.35
0.4
See Fig. 12
'"
polarity
polarity
10
50
positive
negative
positive
negative
SteadyState
Press-fit types ....
Stud types
.......
For either
For either
10
dv/dt
+ Rise Time)
Resistance,
10
3
3
VG
For vD = VDROM' 'GT = 300 mA. tr = O.ll's.

iT = 85 A (peak!. T C = 25C (See Figs. 11 & 15)
Thermal
VMT2
DC Gate-Trigger Voltage:-
For vD = 120V (del. RL = 30 n,
T C = 25 C
.............
For other
11 aOc:
..... ....
. . . . . . . . ...........
................................
....
111-
For vD = 12 V (del
R, ~ 30n
TC=-40oC
rise, gate open,

.
Mode
For vD = 12 V (de)
RL = 30 n
0
T C = 25 C
dv/dt
.
.
Voltage:-
ForvO = V DROM- exponential

T8401S,T8411B.T8421B
T8401D.T8411D.T8421D
T8401M, T8411M, T8421M
DC Gate-Trigger
(See Fig. 14);
. . . . . . . . . . . . . . . . . . ..... . .. . ....
......
... . . . . . . . . . . .
types)
. . . . . . ..
......
1.
C/W
,1i
:I~
'fz
'
'I
il;I
~
i:i
It
jll- :'
41
tl1
"
is
3'
75
"-
!'
81ld
"r
if
t',
'm
:'"
i;
'fll
-1",,1>.
r.,'Qi.
,,'J,,~"'I.-
"
50
1fT
. 1"
,,l!'"
'I
is
-t
.-t
100
II
I :~
180
25f-l-
360"
\J
CONDUCTIO'"
ANGLE
.BI8m
20
FULL~CYCLE
40
60
RMS ON-STATE CURRENT [IT (RMSU -A

92C5-22760
GATE CONTROL MAY 8E LOST

FOLLOWING
SURGE CURRENT INTERVAL
w
>-
110
"
~
~
>-
OVERLOAD
MAY NOT BE REPEATED
UNTIL JUNCTION
TEMPERATURE
HAS
RETURNED
TO STEADY-STATE
RATED VALUE.
w
<r
100
~
w
~1
~~500
"II
"
70
'"
~
60
50
20
FULL-CYC:_E
40
..... :::::::::,
:::::::
200
100
~~~O~~~~~~~I~EeuRRENT
[ITIRMSI]~60A
SPECIfiED
CASE TEMPERATURE
2
60
R ....::
300
0
0
.y,
SOl;;-
0'"
z'"
-"
ffi
~
~
"'"
~~400
80
1i
0
'"
E~
90
'
10
RMS ON-STATE CURRENT [ITtRMSI]-A
SURGE CURRENT DURATION-FULL

92C5-22761
AT
- --
102
CYCLES
92CS-2:2:762
Fig. 4 - Peak surge on-state current vs. surge current duration.
t-
~<rw
<r>
Gfi
we>
>-w
z
>-<r
,?O
100
80
60
zw
02:
~t:
"'~
00
w"z
40
tz
20
~
0.5
1.5
INSTANTANEOUS ON-STATE VOLTAGE (vTl-V

(POSITIVE OR NEGATIVE)
103
100
TRIGGERING MODES; ALL

ENCLOSED AREA INDICATES LOCUS OF
6 POSSIBLE TRIGGERING POINTS.
PULSE DURATION
LIMIT
SHADED AREA
IS TYPICAL
RESISTANCE
RANGE
468
468
'0
DC GATE - TRIGGER CURRENT (IGTI-A

(POSITIVE
OR NEGATIVE 1
'"uz
j'!
'00
'"'"
~~
,-'
7
./
80
>-<t
0:>
~ffi
>-or
"'>-
~'"
0",
60
<t
>-u
z,
'"0
u>'
'"z
"-0
,/
40
20
--
0
468
10-3
TIME
AFTER
APPLICATION
10-2
OF
466
RECTANGULAR
10-1
468
r
POWER PULSE -SECONDS

92LS-2263RI
Vo
oj --- ------ --------
92CS-17063
(inductive load) showing reference pain ts for definition

commutating
voltage fdv./dtJ.
Fig. 13 - Rate-of-change of on-state current with time (defining dUdt).
,
I
v
I
I
o-l-!----:-r--.
'I
r"
1:------i
0-
1,--I
I
90"l.POINT
In I
1-.1--
td
---1
I
__
l-
tr
t---'.,--;
-r-~I
t
VGT
0-
I ::: I~".~~N~
:CS-I3366R2

and gate-trigger voltage showing reference points
definition of turn-on time (tgrl.
for
'2<lV
6OH,
'40 V
6OH,
50 H,
C,
O.l/1F
O.lI1F
O.l/1F
,co
400 V
400 V
C,
0.1 "F
'OOV
O.lI1F
'OOV
0111F
R,
.w .W .W
.W .W
AC INPUT
VOLTAGE
100k1!
RJ
SNUBBER
NETWORK Cs
FOR 60 A
(RMSI-IN
OUCTIVE RS
lOAD
~r--'
SNUBBER
lOADS
(dv/dt)
NETWORK
FOR INDUCTIVE
OR WHEN COMMUTATING
VOLTAGE
CHARACTERISTIC
IS EXCEEDED.
RFI
FILTER
CFIF-
RCA TRIACS
'OOV
rook!!
250kf!
15kH
l',W
15k1!
15k!!
0.18
O.22"F
200 V
33.
390S!
0.18
0.22"F
400 V
33.
390 n
0.18
0.22"F
400 V
33.
390 n
O.l"F
'OOV
01 "F
400 V
O.1"F
400 V
l00"H
T84018
T84118
T84218
2OO,H
T84010
T84110
T84210
2OO,H
T84010
T84110
T84210
.w .w .w
- For Other RMS Cunent .

alues rele.
Appllcallon Note AN474~.
- TYplcal
240 V
values for Lamp
dImmIng
10
RCA
C"CUIU
of
~
I
r---
O.7475U8.99}
DIA
O.745~(l8.93)
Fig. 17 - Mounting method for press-fit package types.
type mounting is nQt recommended

at maximum rated rms current.
shown with your ReA sales representative or supplier,
Press-fit
for triaes operating
Fig. 18 - Suggested mounting arrangement for stud and isola tedstud package types.
Employed
Press-fitted
into
thickness
of
Soldered
directly
which
Press -Fit
Thermal
Retistance QC/W
Type of Mounting
Package
heat sink.
heat
sink'"
to
has a melting
heat
point
Minimum
0.25
sink.
of
required
in. (6.35
(6040
18SoC
used. Heating time should be sufficient
should
be
to cause
solder to flow freely).

THIS METHOD
MUM
Stud
HEAT
Directly
RECOMMENDED
0.4
mm)
solder
0.012
FOR MAXI
to
0.036
For 1 to 3 mil
thick
solder
layer
TRANSFER
mounted
on heat sink with or without
the use of heat sink compound.
0.05 to 0.15
A
,,0
0.751
,,0,
J
J,
NOTE
,-,r
,-,Tl
le~d\
contact
JandJl
available,,!
the ReA
var,ou$lenglht,
Sales Office
on your
For onfor01allon.
loo;;ale
.:,T2
DIMENSIONAL OUTLINE
T8411B, T8411D, T8411M
STUD
SYMBOL
INCHES
MIN
MILLIMETERS
MAX
MIN.
NOTES
MAX
0.620
15.75
,,0
0.751
0.760
0.866
0.872
19.08
21.99
22,14
0.192
4.62
4.87
0.182
6.8 NOM
J,
6.3 NOM
N
,)1
0.740 0.760
0.060 0.065
01,
0.266
~'>T2
0.144
,W
'h-20
NF2A
19.30
NOTES:
172.72 NOM
160.02 NOM
6.75
3.70
'/,20
Leads
VW 's pilch
J and Jl
contact
19.30
1879
1.52
,.
Stilndard
1.65
al various
Sales QHice
diameter
1o. Federal
Recommended
NF2A
available
the ReA
lengths_
in your
threads.
Services,
Handbook
torque:
For mfo,mahan,
loo::ale.
01 coated
125 inchpounds
REF:
Screw
H 28 Part
Thread
I.
DIMENSIONAL
TB421B,
TB421D,
OUTLINE
TB421M
ISOLATED-STUD
"'-----
JI
-, --
.,
.1
ISOLATING
MATERIAL
(NOTE 31
._:1 I
F
IIIIIIIII~
MILLIMETERS
INCHES
NOTES
SYMBOL
MIN
MAX
0.710
MIN.
MAX.
18.03
,0,
0.751
0.760
19.08
19.30
0.866
0.872
21.99
22,14
0.182
0.192
4.62
6.8 NOM.
172.72 NOM.
J,
6.3 NOM.
160.02 NOM
0.375
0.385
9.52
0.740
0.760
18.79
1.52
oT
0,060
0.065
OT,
0.266
oT2
0.144
oT3
0.195
0.205
oW
~20
NF 2A
487
9.78
6.75
3.70
4.95
'h-20
,
,
NOTES
1
LeadsJandJl
2;
oW IS pItch
Standards
19.30
at varlOUi lengths.
dIameter
01 coaled
10' Federal
SerylCes,
Recommended
'65
3
IWlat'ng
No
available
COnlaCIthe ReA Sales Office on your
malenal
torque:
Fo.
,"fo,mauon.
locale
th.eads
REF-
Handbook
Screw
H 28 Part
Thread
I
125 Inch-pounds
(ceramIC)
between
hell (slUdl
and termmal
J,sbl!ryltlumo.,de.
5.20
NF2A
No.1 - Gate
NO.2 - Main Terminal 1
Case, No.3 - Main Terminal 2
WARNING:
tains beryllium
The ceramic
oxide.
stud package
con-
Do not crush, grind, or abrade
of the isolated
this
part because the dust resulting from such action may be

hazardous if inhaled, Disposal should be by burial.
D\l(]5LlD
Solid State
Division
H1713
Main
Terminal
H1765
H-17J4
Main
Terminal
T8440 T8450
Series
Main
Terminal
II
"
~Gate
Packages
For 120-V Line Operation -
(40916)-, T8440B (40919)-,

(40922)(40917)-, T8440D (40920)-,
(40923)(40918)-, T8440M (40921)-,
(40924)-
T8430B
T8450B
For 240-V Line Operation T8430D
T8450D
For High-Voltage Operation - T8430M
T8450M
Main
- di/dt Capability = 300 A/Ils

- Shorted-Emitter Center-Gate Design
- Low Switching Losses
T8450
Series
Series
Press-fit
Press-Fit, Stud, and Isolated-Stud
Terminal 2
Main
Termina12
T8440
T8430
Series
Gate
~
le'
Main
Terminal
Gate
Stud
I solatedstud
These ReA triacs are gatecontrolled full-wave silicon ac

switches. They are designed to switch from an off-state to an
on-state for either polarity of applied voltage with positive or
negative gate triggering voltages.
MAXIMUM
For Operation
with Sinusoidal
Supply

Current Levels
- Low Thermal Resistance
These triacs are intended for control of ac loads in applications such as heating controls, motor controls, arc-welding
equipment, light dimmers, and power switching systems.
They can also be used in airconditioning and photocopying
equipment.
Values:
up to 50160 Hz and with
Resistive or Inductive Load.

REPETITIVE
PEAK OFF-STATE
RMS ONSTATE
VOLTAGE:
CURRENT
T8430D
T8440D
T8450D
T8430M
T8440M
T8450M
200
400
600
VDROM
= -40 to 110 C
Gate open, T J
T8430B
T8440B
T8450B
(Conduction
Angle
= 360):
ITIRMSI
Case temperature
TC
75C (PressFit types)

65C (Stud types) _...................
55C (lsolatedStud types)
.
80---80---80----

ONSTATE
60 Hz (sinusoidal)
..
See Fig. 3
CURRENT:
VDM
OF ONSTATE
IGT
-------
CURRENT:
850 ---720 ---See Fig. 4
A
A
di/dt
---
300 mA. tr = O.I"s (See Fig. 13)

TJ = -40 to 11(fC, t = 1.25 to 10 ms ............
PEAK GATE-TRIGGER
CURRENT:
For 10ps max. (See Fig. 7)
=
VDROM'
ITSM
. ............
50 Hz Isinusoidal) . .
.
RATEOF-CHANGE
A
A
A
300
----Ai"s
12t
----
3600----
A2s
40
0.75---
W
W
IGTM
00

Peak (For lO"s max., IGTM ~ 7A (peak). (See Fig. 7)
.........
Average
TEMPERATURE
PGM
.
PG(AV)
C1l
RANGE:.
Storage
Operating (Case)
Tstg
.
TC
TERMINAL
TEMPERATURE
(During soldering):
Formerly
ReA
.g~
Dav. Nos. TA7752-TA7757,
and TA7937-TA7939,
---
-40 to 150 ---40 to 110---
TT
---
225
---
c
c
c
=:3
;-l
respectively.

-For either polarity of gate voltage (VG) with reference to main terminal
1.
"For temperature
measurement
reference point, see Dimensional
Outline.
~
~
c:;.
~.
1.
11-73
CRARACIERISiiC
::>YMtjUL
v, .., ,~
OTHERWISE
MIN.
Peak Off-State
VoROM
Max. rated value.
IDROM
0.4
mA
......
VTM
1.7
IHO
20
60
85
Voltage:'
25C
Initial principal
current
500 mA (de),
12V:
=
=
TC
......
25C
_40C
.......
.............
...
For other case temperatures.

Critical
MAX.
Current:'
Gate open,
110C,
200 A (peak), T C
DC Holding
vD
TJ
On-State
For iT
TYP.
Current:'
Gate open,
Maximum
SPECIFIED
Rate-of-Rise
=
=
=
=
=
For vD
di/dt
TC
open, TC
See Fig. 6
of Commutation
Voltage:'
VDROM, ITIRMS) = 80 A, eommutating

42 Alms, gate unenergized, ISee Fig. 14):
75C (Pressfit types) .
.. ....
types) .......
65C (Stud types)

55C (lsolatedstud
Critical Rate-ofRise
For vo
of Off-State
VoROM,
voltage
V//ls
V//ls
10
10
10
50
200
30
150
20
100
20
40
75
40
150
100
150
rise, gate
. . . . . . . . . .. . . . . . ..
,.
........
T8440B,
T8440D, T8450D .
T8440M, T8450M.
DC Gate-Trigger
RL
TC
110C:
T8430B,
=
=
=
dv/dt
Voltage:'
exponential
T8430D,
T8430M,
For vD
T8450B
Current:'.
12 V (de)
Mode
1+
VMT2
positive
VG
positive
111-
negative
. negative
1-
positive
negative
111+
negative
negative
30 n
25C
dv/dt
75
mA
IGT
= 12 V
= 30n
For vD
RL
TC
mA
(de)
Mode
1+
VMT2
positive
VG
positive
111-
negative
negative
1-
positive
111+
negative
-40C
35
80
negative
positive
100
280
150
150
400
400
See Figs. 8 & 9
DC Gate- Trigger Voltage:'.
For vD
12 V (de), RL
= 30
n,
.....
....
TC
25C
GateControlled
(Delay
.... .
VGT
1.35
2.5
See Fig. 10
T Jrn-On Time:
Time + Rise Time)
For vD = VDROM,IGT
iT = 112 A (peak), T C
Thermal
. . .
Resistance,
=
=
300 mA, tr = 0.1 /lS,

25C ISee Figs. 11 & 151
tgt
1.2
2.5
J.fS
0.3
0.4
C/W
Junction-to-Case:
SteadyState
.... ....
Press-fit types.
Stud types.
Isolated-stud
Transient
. . . . .
types
(Press-fit
...............
& Stud types)
..............
. ... . . . . . . . . .
.....
ROJC
See Fig. 12
0.5
CURRENT
WAVEFORM:
SINUSOlOAL
LOAD:
RESISTIVE
OR INDUCTIVE
CONDUCTION
ANGLE
: 3600
125
>~= 100
::lo
'"
75
i'
'" 50
~
~
25
--;:;~+:::::
o
20
FULL-CYCLE
CURRENT WAVEFORM:
SiNUSOIDAL
LOAD:
RESiSTIVE
OR INDUCTIVE
CONDUCTION
ANGLE
: 3600
CASE
TEMPERATURE:
MEASURED
AS
OUTLINES
'"
~
>,
"''''
~~
'"
I-
-"
~u
~
''""
'""FULL-CYCLE
RMS ON-STATE
60
CURRENT ~T(RMSU-A
I-
~
~~200
a~
",,,,
....w
<l Z
__
~ gs
150 .. __
z w
_.
---~
0>
._.~ _.
.__.
~~
.~:; ---
00100
wo.
z --
-_
......
_ -::
~
~
..
::---50 ~
:d~
0.5
1.5
INSTANTANEOUS
ON-STATE
VOLTAGE
(POSITIVE OR NEGATIVE)
2.5
(vr)-V
"-
~,
"'- ."'" ...
20C
100
40
'"
~
ANGLE
20
OVERLOAD
MAY NOT BE REPEATED
UN.TIL JUNCTION
TEMPERATURE
HAS
RETURNED
TO STEADY-STATE
RATED VALUE.
'\j~
'Z
z'"
0",
Z'"
+sm
80

FOLLOWING
SURGE CURRENT
INTERVAL.
I-
,SI
60
CURRENT ~T(RMS~-A
I-
&~
CONDUCTION
40
RMS ON-STATE
...............
LOAD; RESISTIVE
RMS ON-STATE
CURRENT [ITlRMSJ]'
SPECIFI ED CASE TEMPERATURE
80A
AT
MINIMUM GATE RESISTANCE

1 I II
1
I
AVERAGE (DC) GATE POWER
DISSIPATION AT RATED CONDITIONS
2468
468
I
10
DC GATE - TRIGGER CURRENT {IGT}-A
(POSITIVE
OR NEGATIVE)
~ 100
a~
80
<[00
1/'1
WW
...I
"' ....
60
~w
0'"
<[
...
u
ZI
Wo
IV
U ...
40
I
I
II I
II
I--"
0.0
E
~
).-
00'
WZ
[7
0"
20
11
I
I
1 II
I II
0
468
10-3
TIME
y'
I
I
>-<[
-r
'I
W~
1-'
.1
II
AFTER
468
10-2
APPLICATION
OF
RECTANGULAR
10-1
POWER
468
I
PULSE-SECONDS
92LS-2263RI
vO~~Y-_J_-\i7---~--/~
I
I
I COMMUTATING
I dl/dt
I
I

commutating voltage fdv/dtJ.
I
Vo
o_LL
I
I
I
I
I
LL __
I
I
I
I
I
I
-',-i--I
:
ITM I
I"
I I
o-.LJ- __
~'d
I
I---
90%
POINT
-i--L-.,
I
I
'Ol--i
f:0-
Ir--
VGT
.--10%
POINT
-------92CS-13366R2
Fig. 15 - Relationship between off-state voltage, on-state current,

and gate-trigger voltage showing reference points for
0 7480( 19 00)
07450(18 92) OIA
Mounting ot press-tit package types depends upon an inter-
cenler
ference fit between the thyristor

inner diameter of 0.575 in. (14.60 mm) and an outer diam-
the thyristor
case and the heat sink. As
is forced into the heatsink hole. metal from the
ana
Ine
gUloe
heat sink flows into the knurl voids of the thyristor case. The
eter of 0.850
resulting close contact between the heat sink and the thyris
sufficient
preSS-TlI
in. (21.59
pacKage proptmy
IfllU
lilt:
flt::i:H
mm). These dimensions provide
clearance for the leads and assure that no direct
tor caseassures low thermal and electrical resistances.
force will be applied to the glassseal of the thyristor.
A recommended mounting method, shown in Fig. 16. shows

press-fit knurl and heat-sink hole dimensions. If these dimen
sions are maintained. a "worstcase" condition of 0.0085 in.
(0.2159
below
mm) interference fit

the
maximum
will allow pressfit insertion
allowable
of
800
pounds. A slight chamfer in the heatsink hole will
insertion
force
help
Table I - Case-ta-Heat-Sink Thermal Resistance for Different

Mounting Arrangements.
Package
Type of Mounting
Employed
sink = 0.25 in. (6.35 mml
PressFit
Stud
Soldered directly to
(6040 solder which
ing point of 188C
Heating .ime
used.
sufficient
to cause
flow freely).
heat sink.
has a meltshould be
should be
solder
to

arrangement;
direct
soldering
has been successfully
heat should be applied only long enough to allow the solder

to flow freely.
DIMENSIONAL
PRESS-FIT
OUTLINE
FOR T8430 SERIES
Thermal
Resistance- C/W
0
0.4
0.15 to 0.3
0.2 to 0.4
em-
ployed. The press-fit case is tin-plated to facilitate direct

soldering to the heat sink. A 60-40 solder should be used and
INCHES
SYMBOL
MIN,
MAX.
00
.0,
MILLIMETERS
MIN,
0.454
0.760
0.7585
0.751
19.08
1.53
0.375
038';
9.52
0060
OJ)65
0.193
1.52
1. Contour and an..,...lar orientation

optional.
2. Outer
diameter
NOTES
11.53
.T
.T,
MAX.
of knurledsurlace.
19.30
19.13
38.86
9.78
1.65
4.90
of these terminals
is
DIMENSIONAL
OUTLINE
FOR T8440SERIES
STUD
DIMENSIONAL
OUTLINE
ISOLATED-STUD
FOR T8450 SERIES
ISOLATING
MATERIAL
(NOTE 4)
INCHES
MILLIMETERS
SYMBOL
MAX.
MIN.
00'
0.751
0.760
1908
19.30
0.866
0.182
0.872
0.192
21.99
4.62
22.14
4.87
0.375
1.63
0.385
0.740
0'
0',
006<l
OW
'.',-20
MIN
41.40
9.78
0.160
0.065
0.193
18.79
1.52
19.30
NF-2A
',1,-20
1.65
4.90
NF-2A
MAX
0.789
15.01
9.52
NOTES
~I~NCH:'~X
MAX
0.591
MILLIMETERS
SYMBOL
NOTES
MIN
2004
0,
0,151
0760
'908
19,30
0866
0872
21,99
22.14
0182
0.192
0375
0385
952
9.78
M,
0375
0385
952
978
0740
0760
1879
1930
0060
0065
152
1. Contour and angular orientation of these terminals is
4.87
46.99
165
0.193
"
"
NOTES
4,62
1.85
490
0195
0205
'/,20
NF-2A '-20
495
~20
NF-2A
optionaL
2. </JW is pitch diameter of coated threads. Ref: ASA 81_
11960. Recommended torque:
125 inch-pounds.
3. A chamfer or undercut on one or both ends of hexagonal

portion is optional.
NOTES
1. Contour and angular orientation
optional.
of these terminals is
2. W is pitch diameter of coated threads. REF: ASA B1,

11960. Recommended torque:
125 inch-pounds.
3. A chamfer or undercut on one or both ends of hexagonal

4. Isolating material (ceramic) between hex (stud) and
terminal No.3 is beryllium oxide.
WARNING:
No.1 - Gate
No.2 - Main Terminal 1
Case, No.3 - Main Terminal 2
The ceramic
tains
beryllium
part
because
hazardous
oxide.
the
of the isolated
Do not crush,
dust resulting
if inhaled.
Disposal
from
should
stud package
grind,
or abrade
such action
be by burial.
conthis
may be
Silicon Controlled Rectifiers (SCR's)
File No. 654
S2062 Series
4-Ampere Sensitive-Gate
Silicon Controlled Rectifiers
Features:
Microampere gate sensitivity

Minimum gate current specified for the S2OO2 series
60()..V capability
4-A (rms) on-state current ratings
35-A peak surge capability
Glass-passivated chip for stability
Low thermal resistances
Surge capability curve
The S20OO, S2061, and S2062 series. are sensitive-gate

silicon controlled rectifiers designed for switching ac and dc
currents. These SCA's are divided into the three different
series according to gate sensitivity. The types within each

series differ in their voltage ratings; the voltage ratings are
identified by suffix letters in the type designations. (Cont'd
on pg. 2)

NON-REPETITIVE
Values:
PEAK REVERSE VOLTAGE
RGK=1000n,TC=-40tollO"C
NON-REPETITIVE
PEAK OFF-5TATE
RGK=1000n,TC=-40toll0'C
..............
VRSXM}
VOLTAGE
VOSXM
REPETITIVE PEAK REVERSE VOLTAGE

RGK=1000n,TC=-40toll0'C
.............
REPETITIVE PEAK OFF-STATE VOLTAGE
RGK = 1000 n, T C = -40 to 110'C
ON-5TATE CURRENT:
Conduction angle = 180', T C = 85'C
Average ac value
..
. . . . . . . . . . .
'TIAV)
. 'TIRMS)
'T(OC)
RMS value
DC operation
. . . . . . .
. . . . . . . . .
ON-sTATE
2.5
4
2.75
A
A
A
CURRENT:

60 Hz (sinusoidall
.....................
PEAK GATE CURRENT
(t=10/,sec)
'TSM
.....
VOM = VOROM'
OF ON-5TATE
100
A//'s
AVERAGE
0.5
0.1
W
W
TEMPERATURE
Storage
Tstg
TC
-40 to +150
-40 to +110
'c
'c
TT
250
'c
CURRENT:
IGT = 1 mA, tr = 0.5/,s, T C = 110'C

PEAK FORWARD (tor 10
IlS
0.2
....
PEAK GATE REVERSE VOLTAGE

RATE OF CHANGE
35
See Fig. 6
max.l
............
(averaging time = 10 ms max.l ..........
PGM
PG(AV)
RANGE:
. . . . . . . . . . ..
Operating (case)'
TERMINAL
TEMPERATURE
For 10 s max.
(During
soldering):
All
types
in
each series utilize
the
JEDEC
TO-220AB
package. Upon request. each type is available in either of two

variants of the TO-220AB package. For information on these
package variations.
contact
the RCA Sales Office
in your
locale.
These thyristors have microampere gate-current requirements

which permit operation with low-level logic circuits. They
power-switching.
and motor-speed
controls. and for gate-current amplification
can be used for lighting.
for driving larger
I SCA's.
LIMITS
CHARACTERISTIC
SYMBOL
FOR ALL TYPES

UNLESS
UNITS
OTHERWISE
SPECIFIED
PEAK OFF-STATE
Forward, Vo ~ VORXM'
T C = 2SoC
MIN.
TYP.
MAX.
0.1
10
10
100
0.1
10
10
100
vT
1.2S
2.2
IGT
200
SOO
I'A
CURRENT:
RGK = 1000 n
IORXM
T C = 110C.
Reverse, VR - VRRXM'
T C = 2SoC .
TC = lOOoC .
I'A
RGK - 1000 n
IRRXM
INSTANTANEOUS
ON-STATE VOLTAGE:
For iT = 4 A and T C = 2SoC ISee Fig. 161 .
DC GATE TRIGGER CUF;lRENT:
VO=12Vldcl.
RL = 30 n. T C = 2SoC:
52060
Series
52061
Series
52062 Series
100
2000
See Figs. 10.11.12

DC GATE TRIGGER VOLTAGE:
Vo = 12 V Idcl, RL =30n.TC=2SoC
For other case temperatures .
INSTANTANEOUS
HOLDING
VGT
= SO mA, T C
:
LATCHING CURRENT:
RGK = 1000 n, Vo = 12 V. TC = 2SoC:
S2060 Series Ii GT = 200 J.lAI
iH
iL
52061 Series IiGT = SOOJ.lAI

S2062 Series IiGT = 2000 J.lAI
RATE OF RISE OF OFF-STATE
IGT
RGK = 1000 n,
rise, T C :: 110C
Pulse Duration""
di/dt
= -10
0.1 /-ls. T C
TURN-OFF
mA
3
6
10
mA
1.7
3.9
1.8
2.S
12
1.7
2.S
30
100
3.S
60
VII's
1J5,
dv/dt ""5 V IllS,
THERMAL RESISTANCE:
Junction-ta-Case
.
I'S
TIME:
tq
AIl's. IGT = 1 mA at turn on, T C = 1lOoC
Junction-ta-Ambient
tgt
= 25C
iT = 1 A. RGK = 1000 n.
50
TURNON TIME:
COMMUTATEO
Vo = VORXM'
0.8
dv/dt
iT = 1 A. RGK = 1000 n.
= 1 mA. rise time
CIRCUIT
VOLTAGE:
Vo = VORXM'
Vo = VORXM'
O.S
= 2SoC:
52061 Series
52062 Series
GATECONTROLLEO
CURRENT:
52060 Series
Exponential
See Fig. 14
RGK ~ 1000 n, Vo = 12 V, IT IiNITIAL)
CRITICAL
R/iJC
R/iJA
I'S
C/W
, I
VRSXM
-----i
IVDSXM
r-- VRRXM
VDRXM
25 CURRENT WAVEFORM: SINUSOIDAL

LOAD; RESISTIVE OR INDUCTIVE
CASE TEMPERATURE
MEASURED AT POINT INDICATED
ON DIMENSIONAL
OUTLINE
.u

LOAD: RESiSTIVE OR INOUCTIVE
CONDUCTION ANGLE:.180
CASE TEMPERATURE MEASUREO AT POINT
INDICATED ON DIME NSIONAL OUTLINE
~
~
~
w
z
0
75
~
i:j
ii;
~
'"~
~
~
~
~
w
or
0
0Z
W
?i
'"I
50
:'"i'
w
0-
25
~
;,
:>
'"
I
~
"
GATE CONTROL
MAY BE LOST
FOLLOWING
SURGE-CURRENT
INTERVAL
Q.

HAS RETURNED
WITHIN STEADYSTATE RATED VALUE
9
0-
~
~
~
:i''"
~
~
;,
0
0.5
DC ON STATE
1.5
CURRENT
2
[ITIDC~-A
2.5
+-
SINGLE-HALF-SINE-WAVE
PULSE (NON-REPETITIVE)
REAPPLIED BLOCKING VOLTAGE:O
6 IGT: ImA SQUARE PULSE, 10,u.s DURATION
CASE TEMPERATURE (TCl:::2S'"C
1000
ffi
'"!11:
-?~
z
~
~
1\'
SAFE-AREA
OF OPERATION
--.L
10
'"
r-----....
DC OFF-STATE
VOLTAGE IVO):::12V
LOAD RESISTANCE (RL):::30n
CASE TEMPERATURE (TC):::25'"C
0Z
~
......
!
X
'":>
l-
J<i
DURATION
6810
468100
GATE PULSE DURATION-fl-s
:;
10 DC OFF -STATE VOLTAGE {Vo)::: 12 V

8 LOAD RESISTANCE (RL):::30n.
6 CASE TEMPERATURE (TCl::: 25C
-;:.
2:'"
'"'"'"
'::;
"-
0-
0-
'"i3
'"'"
:3
ii'
0-
'"
~
:>
'":>
'" 400
0-
>
I
':::!
'"'"
'"'"
~
'"'"
'"
'"
u
2
0.1
"
GATE-TO-
CATHODE
RESISTANCE
!QOO.
(RGK}-D
10.
I
-;:.
CASE
TEMPERATURE
~(Tc}a25C
2
I
::>
u
I-
1!
'"
~ll
~/
...~
0.1
<g
:il
1!
1/
I-
~
~
,/
I
f-#,
I
~
z 001
05
INSTANTANEOUS
1.5
ON-STATE
2.5
VOLTAGE (vTI-V
92C5-19841
DIMENSIONAL
OUTLINE
(JEDEC TO-220AB)
Lr=-:-~OPTIONAL "
CHAMFER
SEATING
PLANE
L~I
II
A
TEMPERATURE
MEASUREMENT
POINT
b
b,
b2
D
E
El
E2
.,
F
H
l
II
.p
Q
Z
No. 1 - Cathode
Mounting Flange, No.2 - Anode
No.3 - Gate
MilLIMETERS
'NCHES
SYMBOL
MIN.
0.160
0.025
0.012
0.045
0.575
0.395
0.365
0.300
0.180
0.080
0.020
0.235
0.500
0.141
0.040
0.100
MAX.
0.190
0.040
0.020
0.055
0.600
0.410
0.385
0.320
0.220
0.120
0.055
0.265
0.250
0.145
0.060
0.120
MIN.
MAX.
4.07
0.64
0.31
4.82
1.02
0.51
1.397
15.24
10.41
9.77
8.12
5.58
3.04
1.39
1.143
14.61
10.04
9.28
7.62
4.57
2.03
0.51
5.97
12.70
3.582
6.73
6.35
3.683
1.02
1.52
2.54
3.04
Thyristors
ffil(]5LJD
2N3228
2N3525
2N3528
Solid State
Division
All-Diffused
SCR's for Low-Cost Power-Control
Power-Switching
2N3529
2N4101
2N4102
and
Applications
RCA
2N322S*,
2N3525*,
2N4101 *, and 2N352S,
2N3529,
and 2N4102
are all-diffused,
three-junction,
silicon
controlled-rectifiers
(SCR's)
intended
for use in
power-control
and power-switching
applications.
Types
2N322S, 2N3525,
and 2N4101 use the JEDEC
TO-66 package
and have a blocking
voltage
capability
of
up to 600 volts and a forward current rating of 5 amperes
0
(rms value) at a case temperature
of 75 C.
~~
Types
2N352S, 2N3529,
and 2N4102 use the JEDEC
TO-S package
and have a blocking
voltage
capability
of
up to 600 volts and a forward current rating of 2 amperes
0
(rms value) at an ambient temperature
of 25 C.
Formerly Dev. Types
spectively.
TA1222,
TA1225,
and TA2773, re-
Formerly Dev. Types

spectively.
TA2597,
TA2617,
and TA2774, re-
2H3228
2H3S2S
2H4101
JEDEC
Current
.. The silicon con trolled-recti fier is also known as a reverseblocking triode thyristor.
if
.
c~
,-
__
Voltage
2H3S28
2H3S29
2H4102
JEDEC
TO-66
Average
TO-8
Average
Forward
Forward
Amperes
Amperes
1.3
3.2
For 120-Valt
Line
2N3228
2N3528
2N3525
2N3529
2N4101
2N4102
Operation
For 240-Volt
Designed
especially
far high-valume
Line
systems
Operation
Readily
adaptable
heat sinks
Low switching
High di/dt
Shorted
baards
and metal
For High-
losses
Valtage
and dv/dt
emitter
Forward
far printed-circuit
capabi
gate-cathode
and reverse
gate
Power
lities
Supplies
construction
dissipation
ratings
All-diffused
canstruction
-assures
farmity and stability
of characteristics
exceptional
uniex-
Direct-soldered
internal
construction
ceptianal
resistance
to fatigue
-assures
Symmetrical
gate-cathade
canstruction
form current
density,
rapid electrical
efficient
heat dissipation
- provides
conduction,
All-welded
construction
Law leakage
currents,
low
voltage
Low thermal
forward
resistance
and hermetic
both forward
sealing
and reverse
drop at high current
levels
uni.
and
Abso/ute-Maximum
Ratings, for Operation with Sinusoidal AC Supply Voltage
at a Frequency between 50 and 400 Hz, and with Resistive or Inductive Load
CONTROLLEDRECTIFIER
2N3228
] 2N3525
TYPES
j2N4101
2N3528
T 2N3529 I
UNITS
2N4102
Transient Peak Reverse Voltage

(NonRepelitive),
vRM(noorep)' ...................
330
660
700
330
660
700
volts
Peak Reverse Vollage (Repetitive),
100
400
600
100
400
600
valls
600
600
700
600
600
700
volts
Peak Forward Blocking Voltage

(Repelitive), vFBOM(replc ..
vRM(replb ...........
. ....
Forward Current:
For case temperature (T C) of . 75C,
and unit mounted on heat sinkAverage DC value at a conduction
angleot 180', I FAY<! ............
RMS value, IF RMS"
For other conditions, See Fig. 8

For free-air tempera~ure (T FA) of 25C,
and with no heat sink employedAverage DC value al a conduction
angle of 180", IFAY<! ......
RMS value, I FRMS' ...............
For other condlhons,
1.3
1.3
1.0
1.0
See Fig. 9.
Peak Surge Current, iFM(Surgej!:

For one cycle of applied voltage ..................
For more than one cycle of applied voltage..
60
. .........
Sub-Cycle Surge (NonRepetitivel

111g
For a period.of lms 10 8.3ms ..........
~~~d~h.C.h~~~.O.'
.F.o~a.r~~~r.r~n.t,
...............
VFB
IGT
See Fig. 13
60
See Fig. 13
15
15
100
100
ampere2
second
amperes/
microsecood
vBoo(min. value)
100mA, 0.51' s rise time
(See waveshapes of Fig. I)
Gale Power:
Peak, Forward or Reverse, for lOj.Ls duration, PGMj ....
(See Figs. 5 and 6)
Average, PGAyk .........................
Tempelature:
Storage, Tstg ..........................
Operating (Casel, T C
CRITICAL
1---------------
0-
i
-
-f---!
_T~ -~- - -- -- --------_
...:
\---
92CS-I3363RI
0-
'F
0,/01
fi:o
d't
t= RC
63 VFB
1
_ ..~"'-._. _ ..._ .._-
__
n _____
2N3228. 2N3528
AI Te:
Typ.
Max.
Min.
Typ.
...........
100
400
. . . . . . . . . . . ...
0.10
1.5
. . . . .. . . . . . . . . . . . -
0.05
0.75
1.15
.Ioooe .
_n
2N3525. 2N3529
Min.
... _ ..
.........
Typ.
Max.
- -
600
volts
0.10
3.0
0.40
4.0
mA
0.10
I.5
0.10
1.0
mA
1.8
1.15
1.8
1.15
1.8
volts
IS
IS
15
mAldc)
1.1
1.0
1.1
1.0
1.1
1.0
volts(dc)
10
10
10
10
10
10
mA
10
100
10
100
10
100
vollsl
Max.
2N4101. 2N4102
Min.
Forward Breakover Voltage, vBOOm;

Peak Blocking Current, at T C ::
- __
1000e:
.......
Forward, IFBOMn. . . . . . . . . . . . .
VFBOP: 'BOO(min. value)
Reverse, IRBOMQ ..... ............
VRBOP: vRMUep) value
..
Forward Voltage Drop, vFr

At a Forward Current of 30 ampeles and a TC
II).
+250C (See Fig.
=:
DC Gale-Trigger Current, IGTs
AI Te:
.150e (See Fig. 5).
............................
GaleTrigger Vollage, VGTI

AI Te:
.150e1See Fig. 5). . . . . . . . . .... . . . . . . . . .. . . ...
Holding Current, iHOOu
AI Te:
.150e ..
. . . . . . . . ..... . . . . . . . . . . .
Critical Rate of Applied Forward Voltage,

Critical dv/dtv.
.....
VFB
=:
Te:
....
microsecond
.Ioooe (See waveshape of Fig. 1)
TurnOn Time, tonW, (Delay Time + Rise Time)

VFB
=:
.......
vBOO(min. value), exponential rise,
. . . . . . .. . . . . .
0.75
I.5
0.75
I.5
0.75
I.5
microseconds
15
50
15
50
15
50
microseconds
vBOO(min. value), iF '" 4.5amperes,
IGT: 100mA. O.l!,s rise lime, Te:
.150e
(See wave shapes of Fig. 3)

TurnOff Time, toffX, (Reverse Recovery Time + Gate Recovery Time) ...
iF"" 2 ampefes, 50 p. s pulse width, dVFB/dt
20 vip. s,
=:
dr, 'dl:
lOA'!'s.
IGT: 100mA. Te:
.750e
(See waveshapes of Fig. 4)

2N3228. 2N3525. 2N4101 2N3528. 2N3529, 2N4102
Min.
Typ.
Max.
Min.
Typ.
Max.
-40
Thermal Resistance:
Junction-tocase. .............
Junctlontoambient.
.. .......... ........
. . . . . . . . . . . . . ...
dir Idt
ClYI
C/W
VRB
_____ :----.i
~\
\
I
I
-t-----I
I
I
I' 'I'
I
I
k----I
------0
I
t gr
I
-----..j
I
toff~
SHADED
AREA
INDICATES
LOCUS
OF POSSIBLE
TRIGGERING
POINTS
FOR VARIOUS
TEMPERATURES.
...,
PERMITTEO
PULSE WIOTHS
FOR INDICATED
PEAK
FORWARD GATE
POWER
"-
II
"-
II>
1 -
~
0
>
'~
"
~
>
'"
10
Ips
r-
~~N~~r
JUNCTION
0
0
..
",
0
..
,
..'"
:z:
+'5"C
+ 100C
""
MAXIMUM
GATE
RESISTANCE
- /'-
'\.
~~~
~\~'
f/
.....
AVERAGE
GATE
DISSIPATION
LIMIT
0.5
WATT
TJ
-40C
tlWC
MAXIMUM
VOLTAGE AT WHIcH
NO UNIT WILL
TRIGGER
FOR
T J ~ + 100C
I
V~ ..
~
,.-
:.>
~'i>\'i>
ms
STEADY
STATE
,/
1.0
...
'.
10014
~tJEI
NTD~~GAt;.EtD
TEMPERATURE
(T I
40C
T "
+25"C
MAXIMUM
CURRENT
JUNCTION
GATE
TRIGGER
' ,FOR INDICATED
TEMPERATURE
IT J)
I I III
I I
The
used
construction
in
center
of
devices
I';ate.
emitter
both
these
These
and
devices
reverse
Limitinl';
for different
I';ate pulse
These
limits
and peak
in the
power
sients
total
reverse
periphery
employ
shorted-
be
are
adhered
shown
pulses
dissipation,
should
not exceed
rating
(PCA Y) of 0.5 WBtt.
products
in Fil';. 5.
to when
tril';ger
desiW1inl';
pulse
The volt-ampere
limitations
verse,
shown
in
Fig.
both
the average
widths
products
6 should
for reverse
if present.
on
and peak
of volt-ampere
for maximum
gate
gate
junction
larl';e
I';ate voltlil';e
widths
direction
or reverse
average
peak
dissipation.
used to determine
also
values
should
tril';l';er circuits
which removes restrictions
I';ate current.
pulse
I';ate-cathode
provides
construction
forward
the
be
gate tran-
In all
forward
cases,
and
I';ate dissipation
re-
Turn-on times for different gate currents are shown

In Fili.
7. These
required
width
curves
of the
necessary
to maintain
malinitude
of the
the
latching
may be used
liate
the liate
forward
current
value.
at least
equal
to or somewhat
turn-on
time.
Some applications
widths
for proper
pulse
However,
liate
until
has
the
reached
conservative
trililier
pulse
lireater
than
width
be
the device
may require
circuit
the
It is only
current
requires
pulse
the
to determine
pulses.
trililier
anode
desil';n
liate
that
trililier
wider
operation.
RATING
CHART
(FREE-AIR
TEMPERATURE)
FOR TYPES
2N3528, 2N3529, AND 2N4102
o 1---r-l'80CONDUCTION
ANGLE
0.25
AVERAGE
0.5
0.75
FORWARD
1.25
1.5
1.75
CURRENT (IFAV}-AMPERES
92CS-12749RI
CASE TEMPERATURE
(TC)::25
C
SUPPLY FREQUENCY"'60
Hz SINE WAVE
30
[
AVERAGE
2
FORWARD
CURRENT
3
(IFAV)--AMPERES
92C5-12750
NATURAL COOLING.
SINGLE - PHASE OPERATION.
CASE MOUNTED DIRECTLY ON HEAT SINK.
HEAT SINK: 1/16
THICK COPPER WITH
A MAT BLACK SURFACE AND THER
MAL EMISSIVITY
OF 0.9.
SUPPLY FREQUENCY
LOAD = RESISTIVE
:~~~r~~16::AA:D
'"'"
'"'"
:>
"I
50
40
30
a'"
20
l-
t!!
'"
"i!'
.340=-.-1
*
MIN
SEATING
LUE
}.
I\.
,I
I111
4
~r'OI
I""-.
I'}.
_2N3528.1'
2N352~1 '
-~Ni'9211
2N3228.
2N3525
TC "75.C
"'-., I
Tl
r-
TFA" 25C
I I
4
.500
.470
.250
.~
10
VA
rOI--lI
to

2N3528, 2N3529, AND 2N4102
JEDEC No. TO8

2N3228, 2N3525, AND 2N4101
JEDEC No. TO.66
'6
\,""
\ '"
1\
I
"
.....
rIOFLA~~~EM~~~~~~-r:~I~~ttutATED
60"
Q.
= 60 Hz SINE WAVE
~~~~~~~
PLANE
.075
.050
DETAILS OF OUTLINE
IN THIS ZONE QOTIONAL
3 PINS
.030 t.003
DIA.
92CS-9963R3
TERMINAL DIAGRAM FOR TYPES

2N3228, 2N3S2S, AND 2N4101
ANODE
TERMINAL
(CASEl
PIN 1: GATE
PIN 2: CATHODE
CASE:
ANODE
TERMINAL DIAGRAM FOR TYPES

2N3S28, 2N3S29, AND 2N4102
[~J
PIN 1: CATHODE
PIN 2:
GATE
PIN 3: ANODE
(CONNECTED
TO CASE)
oocram
Solid State
Division
4.5- Ampere Silicon

Controlleo Rectifiers
For Capacitive-Discharge Systems
~P~~~)
--]
For
For
For
For
~~~~,ECASE)
Low-Voltage Operation
120-V Line Operation 240-V Line Operation High-Voltage Operation
Features:
CATHODE
IPIN 1)
Shorted-emitter gatecathode construction

Forward and reverse gatedissipation ratings
Low forward voltage drop
at high current levels
200-A surge current

capability
Low switchi ng losses
High di/dt and dv/dt
capabilities
These RCA types are all-diffused silicon controlled rectifiers

(reverse-blocking triode thyristors) designed for high-peakcurrent low-average-current applications. Typical applications
are ignition service, crowbars, and other capacitive-d ischarge
systems.
Non-repetitive
- 52400A (40942)*
52400B (40943) *
52400D (40944) *
- 52400M (40945)*
These SCR's have an rms on-state current rating (IT [RMS])

of 4.5 amperes and have voltage ratings (VDROM) of 100,
200, 400, and 600 volts.
peak reverse voltage
Gate open.
.
Non-repetitive peak forward voltage
Gate open.
RepetitIve peak reverse voltage'"

Gate open.
Repetitive peak off-state voltage'"
Gate open ..
On-state current:
TC
= 75C, conduction angle = 1800
RMS.
Average ..
Peak surge (non-repetitive)
ITIRMS) ----------
4.5 ---------
'T(AV)
3.3
Fig.3 --------
-----------------See
on-state current:

170 ---------
50-Hz, sinusoidal.
---------200
6OHz, sinusoidal.
For more than one full cycle of applied principal voltage
---------
-------See Fig.4 --------
Rate of change of on-state current

Vo "VOROM,IGT = 200 mA, tr
Fusing current (for SCR protection):
0.5"'
TJ = ~40 to 1000C,t = 1.5 to 10 m, .

Gate power disslpation:Peak forward (for 1 J,J.S max ,J
Peak reverse
Average (averaging time = , 0 ms, max,l .
Temperature
Storage,
range:-
Operating {case)
Pin temperature (durIng soldering):
For 10 s max. (pins and case) ,
See footnote on next page.
(SeeF'9121
------------------
---------
40 --------See Fig.8 --------
0.5 --------
Footnotes for preceding page

..These values do not apply if there is a positive gate signal. Gate must be open or negatively biased .
Any product of gate current and gate voltage which results in a gate power less than the maximum is permitted .
Temperature measurement point is shown on the DIMENSIONAL
OUTLINE.
LIMITS
CHARACTERISTIC
For All Types
SYMBOL
Min.
Peak Off-State
UNITS
Typ.
Max.
Current:
(Gate open, T C ~ 1000C)

= VOROM
100M
0.2
Reverse at VR ~ VR ROM
IROM
0.1
2.5
VGT
1.1
Forward
Instantaneous
at Vo
On-State
Voltage:
iT ~ 100 A, TC = 250C,
DC Gate Trigger
Vo
mA
See Fig.5
Voltage:
= 12 V (del,
R L = 30
fl, T C ~ 25C

DC Gate Trigger
See Fig.l0
Current:
Vo = 12 V (de), RL = 30
fl, TC = 250C
IGT
15
mA
IHO
20
mA
tgt
1.6
2.5
ps
tq
20
40
ps

DC Holding
Current:
Gate open,
initial
principal
current
~ 150 mA, T C ~ 250C

GateControlied
(Delay
Vo
Time
Turn-On
= VOROM,
Time:
IGT = 200 mA, tr = 0.1 ps,

T C = 250C
Circuit-Commutated
~ VOROM,
Turn-Off
(See Fig.ll)
Time:
iT ~ 18 A, pulse duration
= 20 V Ips, dildt
Alps, IGT = 200 mA, T C = 750C
= 50 ps, dv/dt
~ -30
9
See Fig.6
+ Rise Time)
iT ~ 30 A (peak),
Vo
8
See Fig.9
See Fig.14
Critical
Rate of Rise of Off-State
Vo
= VOROM,
exponential
gate open, T C = 1000C,

Thermal
Voltage:
voltage
rise,
10
dv/dt
100
40
Vips
See Fig.15
Resistance:
Steady-state
Junction-to-case
ROJC
Junction-to-ambient
ROJA
I~~-----
"T
IHO
----1'
LiDO
"(BOlO
I I
I Iv
I
DSOM
I
VOROM
CIW
~
~
~
~
0
'"
~
:?
Boo.
I"
..? 0
,;-~..:.~f?'
!J.': b.!Y ~~
<.10
COIIIOUCTION
ANGLE
~...,'
~~
.
,,"
0
,,0
~
z
~~~DOR~_S~~:~VEE
CURRENT [IT(RMSJ]~45AI
''""
"
25
200
0
W
AT CASE TEMPERATURE
j-
75-C
ek
;;;
" ..
!
""'-
........
150
0."
W~
"'~
,><
.........
.........
GAT~ CIO~TROlIMAY'
l~S+
INTERVAL
OVERLOAD MAY NOT BE REPEAlED UNTIL JUNCTION
TEMPERATURE HAS RETURNED
'-.....
TO
STEADY
- STATE
RATED VALUE
~Hl
~-,oo
5~
~
~
~
(Te
~
f""
50
.........
--
0
0.5
I
INSTAI\lTANEOUS
15
ON-STATE
Z
Z5
VOLTAGE lv,)-V
9lCS-19959
>
1,0
~
~?;
8
6
OW
:;
...o~~
~5
~>
in",
fg
. UPPER
LIMIT
OF PERMISSIBLE
2 AVERAGE
(DCI
GATE
POWER
DISSIPATION
AT
RATED
CON
01
"
ITiONS.
6 80.1
2
.
6 8 1
6 8'0
POSITIVE DC GATE TRIGGER CURRENT CIGT)-A
9255-4466
0.6
0.4
02
REvERSE GATE CURRENT IIGTR)-A
92CS-13360R3
,
I
o-L
Vo
I
I
o_L:_ ---:-r ---
!:E90~.
I
/---
Olld!
In I
roNT
1_1.- ---
o-L-j_ _
r'd---ttrL.,
~t9t---1
r-~'
vGT
0-
1 _IO'Y.
POINT
---------
Fig.13-Relationship
Fig.12-Rate
of change of on-state current
with time (defining dildO.
between
off-state
volt-
age, on-state current, and gate-trigger

voltage showing reference points for
definition of turn-on tir.1e (tgt).
CRITICAL
d./dt
i.!.:O.63~
dl
I
Fig. 14-Relationship between instantaneous onstate current and voltage showing

reference points for definition
cuitcommutated
turn-off
of cir-
time
(tq).
pRe
Fig. 15-Rate of rise of off-state voltage with time (defining

critical dvldtJ.
DIMENSIONAL
i~
~
/U-U-
2SCREWS,632
NOT/llVA'LA6U
FnOMRC/ll
...,,,"'..'u"',,"'"
E>
~:~1~NSULATOR
ee
e
~
H/llROW/llREPRICES
{~~~~~~K
INCHES
SYMBOL
495334-1
(-3
~.~.YLg~:,~U{~~I~~~USHINGS
s----
SHOULDER
DIA."
~~~~D~6R3i~~~~~'=
0.050
/llV/llIL
In.
11.27 mml MAX.
BLEAT
PUBL'SHED
LOCK
WASHERS
WASHERS
}
~
NOT
FROMRCA
MilLIMETERS
MIN.
MAX.
MIN.
0.270
0.330
6.86
.0
.0,
0.027
0.033
0.686
0.550
0.650
13.97
16.51
0.524
11.28
13.31
0.360
900 NOMINAL
.b
H4IlOW4RPRICES
2METAL
FOR TYPES
~f::~:~:;;,;::","'"
OUTLINE
S2400 SERIES
JEDEC TO-S
0.444
0.136
8.38
0.838
0.146
3.45
3.71
0.115
2.92
0.440
9.14
11.18
4VA'L/llBL
2HEX.NUTS@

hardware policies may differ; check the availability of atl items
NOTES
MAX.
Pin 1 - Cathode
Pin 2 - Gate
Case, Pin 3 - Anode
-,
-
OO(]5LJ[]
Solid State
Division
S2600 S2610 S2620

Series
7-Ampere uLow-Profile"
For Power Switching, Power Control, Power Crowbar, and
Ignition Applications
The
52600,
52610,
and
52620
Forward and reverse gate ratings
High dv/dt
LC'w switching
losses
II
All-diffused
center gate construction
Low leakage currents, both forward
Low thermal
resistance
Low forward voltage drop at high current levels

High pulse-current
capability
for capacitor-discharge
Sub-cycle
series
are
three-junction,
silicon controlled
rectifiers
triode
thyristors)
for capacitor-discharge
high-voltage
generators,
and
surge capability
power-switching
and
control
applications.
52600B
They
systems
engines,
Other
have a three-lead
52600D
(40655)',
low-profile
and 52600M
package
(similar
(40833)'
to the JEDEC
may
(battery
electronic
be
used
circuits
(40658)',
in capacitor-discharge
or magneto
52610D
ignition
types)
for internal
combustion
and
high-voltage
generators.
igniters,
uses are power-control
52610B
(40654)',
ignition
curve
TO-5).
all-diffused,
(reverse-blocking
ignition systems,
and reverse
capability
and power-switching
(40659)',
have integral
heat radiators;
52620B
(40657)',
and
S2620M
(40834)'
and 52610M
circuits.
(40835)'
(40656)',
52620D
have
integral
heat
spreaders.
MAXIMUM RATINGS. Absolute-Maximum Values:
NON-REPETITIVE
up to
250
500
700
250
500
700
200
400
600
400
600
100
85
A
A
100
PEAK REVERSE VOLTAGE"
Gate open.
REPETITIVE
S2600M
S2610M
S2620M
PEAK FORWARD VOLTAGE"
Gate open.
REPETITIVE
S26000
S26100
S26200
Gate open.
NON-REPETITIVE
S26006
S26106
S26206
PEAK OFF-STATE
VOLTAGE"
Gate open.
RMS ON-STATE CURR ENT (Conduction angle
VDROM
= 1800)_

ON-STATE CURRENT:
60 Hz (sinusoidal)
50 Hz (sinusoidal)
200
See Figs. 7-11
ITIRMS)
ITSM
.
100
85

PEAK REPETITIVE
ON-STATE CURRENTi-
100
85
See Fig. 12
(See Fig_ 21):
Duty factor = 0.1 %. T C = 75C

Pulse duration = 51J,s(min.), 20 IJ,S(max.) .
100
100
RATE OF CHANGE OF ON-STATE CURRENT:

VDM
VDROM,
IGT
200 mA, tr
0.5 jJS ISee Fig_ 1)
200
A/jJs
MAXIMUM
RATINGS,
(Cont'd).
S2600B
S2610B
S26208

NONREPETITIVE
SUB-CVCLE
S26000
S26100
S26200
S2600M
S2610M
S2620M
SURGE CURRENT:
TC = 250C. single pulse, IGT = 50 mA,

10 IlS square pulse.
.
GATE POWER DISSIPATION":

PEAK FORWARD
IIor 1 ,,, max,l
PEAK REVERSE
AVERAGE
(averaging time = 10 ms, max.)
TEMPERATURE
Storage
Operating
"."
PGM
, .....
PRGM
PG,CAV)
40
40
---
40
See Fig. 14 ---
0.5
0.5
0.5
RANGE':
.
(case) . ..
LEAD TEMPERATURE
lOuring soldering)":
For 105 max. for case or leads ...
t When rms current exceeds 4 amperes (maximum rating for the anode lead), connection must be made to the case.
-These
values do not apply
if there is a positive gate signal. Gate must be open, terminated,
or have negative
bias.
"Any values of peak gate current or peak gate voltage that yield the maximum gate power are permissible.
'For
information
on the reference point of temperature measurement, see dimensional outlines.
When these devices are soldered directly to the heat sink, a 60/40 solder should be used. Case heating time should be a minimum ...
to allow the solder to flow freely.
Vo
oJ_-- ------ --- -----
sufficient
enes
c-nvn
CHARACTER
ISTrC
1;;0,
S2610 Series
S2600 Series
SYMBOL
Ie
UNITS
S2620 Series
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
0.1
0.5
IROM
0.05
0.5
0.2
1.5
0.1
1.5
vT
1.9
2.6
1.9
2.6
15
15
mA
0.65
1.5
20
mA
PEAK OFF-STATE CURRENT:

(Gate Open, TC = +100oC)
FORWARD,
Vo = VOROM
100M
REVERSE, VR, = VRROM

INSTANTANEOUS
mA
ON-STATE VOLTAGE:
For iT = 30 A and TC = +250C
DC GATE TRIGGER CURRENT:

Vo = 12 V (DC)
RL = 30 n
IGT
TC = +250C .
DC GATE TRIGGER
See Fig. 16
VOLTAGE:
Vo = 12 V (DC)
RL = 30n
VGT
TC = +250C
..
0.65

INSTANTANEOUS
HOLDING
..
.
.

RATE-OF-RISE
CURRENT:
Gate Open and TC = +250C .
CRITICAL
1.5
See Fig. 17
OF OFF-STATE
Vo = VOROM
Exponential rise, TC = +100oC
(See Fig. 3)
..
iHO
dv/dt
20
200
tgt
tq
15
50
20
See Fig. 18
VOLTAGE:
..
20
200
V/J1s
J1s
50
J1S
GATE CONTROLLED TURN-ON TIME:

,iT = 4.5 A
Vo =VOROM
IGT = 200 mA, 0.1 J1S rise time
TC = +250C
(See Fig. 4)
CIRCUIT COMMUTATEO
TURN-OFF
TIME:
VD = VOROM, iT = 2 A
Pulse DuratiOn = 50 J1S
dv/dt = 20V /J1s, di/dt = -30A/J1s
15
30
IGT = 200 mA at turn on, TC = +750C

(See Fig. 5)
THERMAL RESISTANCE:
Junction-to-Case . ..
Junction-to-Ambient
(See dImensional outlines).
ReJC
ReJA
120
ReJHS
(S2610 Series)
Junction-to-Heat
Spreader (See dimensional
outline)
(S2620 Series)
C/W
7
CRITICAL
dv/dt
,/
, I
VRSOM----i
~VRROM
*:0.63-ft" RC
In
di/dt
VS" 'T"--M
-~
I
I
I
50%IRM
I-t--- '.-----j __ v0
__,
~
l;;
~
EOl80
",-u
1-
co .... 60
3
...
40
~
::>
..
~
2
AVERAGE
4
ON-STATE
6
CURRENT
[I TtAVU
10
A
92LM-\\54R2
Fig. 6-Power dissipation vs. on-state current.
1'"
Md'
HEAT SINK
MOUNTING
ARRANGEMENT
18J_C=5C/W)
Jt:
SO~ER
",u
~
x
100
I-
VT
CURRENT
WAVE FORM: SINUSOIDAL
~
LOAD: RESISTIVE
OR INDUCTIVE
CONCUCTION
ANGLE a 180
IL.LLL.L
'":'":>
..''""
'0
'R
I 1
--I r'n
20
HEAT
SINI(
EPOXY
ADHESIVE
POINT
OF
TEMPERATURE
MEASUREMENT;
SEE DIMENSIONAL
OUTLINE,
PG. 7
HEAT
SINK
MOUNTING
ARRANGEMENT
CURRENT
LOAD: RESISTIVE
OR INDUCTIVE
CONDUCTION
ANGLE a 180
'"='">
.-'"
'"
~
~
.-
18;_c:::
SO~~ER
EPOXY
ADHESIVE
~
HEAT
SINK
100
POINT
OF
TEMPERATURE
NOTE:
"'u
u.
ORILlEO
IN THE HEAl
SINK.
'"
;<.-u
oj
50
~
~
CIRCUIT- BOARD
MOONTiNG
ARRANGEMENT
J_A'''"C/
mil/mum==}
L.0625~.MA~
(1.587mm)
100
....
'":>
=>
:>
25
50
25
'":>
'":>
9255- 3883R2
Fig.
~;'
:..J-I 75
"'.;<~
'":>
Ct:
~
MEASUREMENT
FOR
TEMPERATURE
MEASUREMENT,
ATTACH
THERMOCOUPLE
TO THYRISTOR
CASE
THROUGH
A SMALL
HOLE
~l15
~~llrr-----'
CURRENT
WAVE FORM:
SINUSOIDAL
LOAD:
RESISTIVE
OR INDUCTIVE
CONDUCTION
ANGLE
- 180
lJJ
15CI",)
8-Maximum
allowable case temperature
VS.
onstate current for
S2500 series.
CURRENT
WAVE
LOAD: RESISTIVE
CONDUCTION
FORM: SINUSOIDAL
OR INDUCTIVE
ANGLE
180
I,
HEAT SPREADER
=~~~T~t~I<~THERMAL
~~~I~J:~CSEpRJ~ANJJkO~.
NOTE"
92SS-3BB4R2
Fig. 9-Maximum allowable ambient temperature vs. on-state current

for 2600 series.
CURRENT
LOAD: RESISTIVE
OR INDUCTIVE
CONDUCTION
ANGLE
- 180
7.0C/W)
FOR TEMPERATURE
MEASUREMENT,
ATTACH
THERMOCOUPLE
TO
HEAT
SPREADER
THROUGH
A
SMALL HOLE DRILLED

HEAT SINK.
HEA~
SPREADER
THYRISTOR WITH INTEGRAL

HEAT RADIATOR MOUNTED
ON A CIRCUIT BOARD
BJ-A :; 30 C/W
IN THE
.l;(F?M~
_"
(~~
o
II.
~~~~~ROR POINT OF TEMPERATURE

MEASUREMENT
lr~
92SS-3885R2
Fig. to-Maximum allowable heat-speader temperature vs. on-state

current for S2620 series.
SUPPLY FREOUENCY ~ 50/60 Hz (SINE WAVE)

CASE TEMPERATURE
~ 60 C
LOAD: RESISTIVE
REPETITIVE
PEAK REVERSE VOLTAGE (VRRM)~MAXIMLN-RATED
AVERAGE ON-STATE
CURRENT [IT(AV)]-MAXIMUM-RATED
VALUE
__<
100
~I
i=~ ~
80
~E
"'.'z
'\
60
~~
"'u
'""''''
40f----
60 Hz
=>>-
"'0;
"",
""
lt~
I"'\.
r--...
z",
VALUE
GATE CONTROL MAY BE LOST DURING

AND IMMEDIATELY FOLLOWING
HAS
RATED
VALUE.
I'\.
"'\.
92SS-3886R2
Fig. It-Maximum allowable ambient temperature v,s. on-state current

for S2610 series.
20
I---
50 H;'"
-.....;~
O.~
1.0
INSTANTANEOUS
92C5-19037
Fig. t2-Peak surge on-state current vs. surge current duration for all
types.
1.5
2.0
2.5
ON -STATE
VOLTAGE
3.0
(vTI-V
92LS-1l50RI
Fig_ 13-lnstantaneous
types.
on-state current v,s. on-state VOltage for all
MAXIMUM
SHORT CIRCUIT
CURRENT
~MINIMUM
('
"'(,
,"",0
GATERESISTANCE
()
(,.".
(,-\>
A'J;.RAGE
_"
GATE POWER
LIMIT'
0.2 W
.".~
(.s'~5!;.-If.
-10 >
ffi
Jf ..,
~;
~~~ ::.
-202:
(0
"'''''04() ~
1: -If.(/1t~
4-1-
.."
"'oJ
-30
~~
~
t5
>
w
...
-40
..,<l:
:::
-SO ~
>
~m~~~CUlT"
, ~OLTAGE
w
0:
-60

AVERAGE lOCI GATE POWER
OISSIPATION AT RATEO
CON ITIONS. (SEE FIG. 16
17)
e.
0.'
4
80.1
POSITIVE
GATE-TO-CATHODE
8 I
TRIGGER
6
CURRENT
810
(tGT)-A
92SS-3888RI
Fig. 15-Gate
-40
-20
0
20
40
CASE TEMPERATURE ITCI-C
pulse characteristics
for forward triggering mode. ;
60
92SS-3889RI
IGT
(SEE FIG. 20
FOR VALUES)
SINE -WAVE PULSE ( NON-REPETI TlVE)

SINGLE H~~iE~ BLOCKING VOLTAGE DURATION
NO REAP
SQUARE PULSE.IOj'.s
'";i
'"z
Ui
'"
>
~I
(Tel: 25C
;2~E";~~:ERATURE
100
11:
.
cl "
.
ISJOO
-''''
~
j
~~
-,,,,
UNSAFE OPERATION
",'"
3~
"=......
z
60
~~
~I
~G
~~
"
~
~1
"'"
s~~~~7\
-r--
~ J
50,40
<
w
wlCURRENT~
i:'
80
10
@I
100
90
~-
, I
~i
.~~
~u
o~
....
"
DUTY FACTOR
10
-IOURATIc.r-
6.
10m,
Ims
2
4
6
100~s
SURGE
CURRENT PULSE DURATION <SEC>(MEASURED
'O~,
AT"O"CURRENn
92C5-'9039
80.1
.. ..:-
20
I PULSE I
,~
I X I100,'''PULSEDURATION
REPE rmON INTERVAL
("J '"
30
.,
, I
'10
DUTY FACTOR - PER CENT

SS-3894
.. ) vs. duty
k pulse current (repetltfve
21-Derating curv~ f?~ ~e~rcuit.
factor for the Igmtfo
. 20-Sub-eycle surge capability.

Fig.
DIMENSIONAL
OUTLINE
FOR S2610 SERIES
o?~
OUTLIN E FOR S2620 SERIES
'J
~D~~
T~.
JJ
DIMENSIONAL
MOUNTING TAB
(LEAD NO. 2 BEHIND
MOUNTING TAB)
TO-S PACKAGE
WELDED TO
HEAT-RADIATOR
DIMPLED
STANDOFFS
0{
HEAT RADIATOR
(NOTE 1)
~PI
INCHES
SYMBOL
MIN.
I
INCHES
SYMBOL
MIN.
A
D
D1
E
F
F1
L
o P
o
P,
N
Nl
N2
1.205
0.745
0.875
0.040
0.170
0.885
0.295
0.093
0.048
0.998
0.687
0.048
MILLIMETERS
NOTES
MAX.
MIN.
0.630
1.235
0.755
0.905
0.055
0.225
0.305
0.09S
0.062
1.002
0.689
0.052
-l
30.61
18.923
22.22
1.02
4.32
22.48
7.493
2.362
1.21
25.349
17.45
1.219
NOTES:
1. 0.035 C.R.s.,
MAX.
16.00
31.37
19.177
22.99
1.40
5.72
7.747
2.413
1.57
25.450
17.50
-l,.320
.. h. elect,ole55
nickel
IlnlS..
I
. ted-circuit
ded hole size
or pnn
mm) dia.
2.
Recommen
3.
is 0.070 in. (1.78

Measure d at bottom
of heat
.
radiator
3
3
plote
boord
91SS.J900Rl
0.14
I 0.16
0.188
0.40
0.32
0.156
0.02
0.95
0.69
0.71
0.55
0.75
0.072 Rad.
0.094 Dia.
N
N1
N2
oP
L_o P,
MIN.
0.22
0.75
1.0
0.406
A1
D
Dl
D2
D3
E
E1
E2
F
.1
NOTES:
1. Min. length, 3 leads.
2. Two holes.
MilLIMETERS
1. MAX.
.1 MAX.
5.58
19.05
25.4
10.31
3.55
I 4.06
4.77
10.16
8.12
3.96
0.05
24.13
17.52 118~03
13.97
19.05
1.83 Rad.
2.39 Dla.
NOTES
SYMBOL
.-
MilLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
REFERENCE POINT FOR

TEMPERATURE MEASUREMENT.
(TOTAL THERMAL RESISTANCE FROM
JUNCTION TO HEAT SINK. 10 C/W)
NOTES
92SS-3898R2
0.160
0.180
'.06
4.57
.0
.0,
.,
...
0.017
0.021
0.432
0.533
0.355
0.366
9.017
9.296
0.323
0.335
8.204
8.51
Scotch brand electrical tape No. 27 (thermo setting one side):

Minnesota Mining & Mfg. Co., 5t Paul, Minnesota, or equivalent.
0.190
0.210
'.83
5.33
An epoxy such as Hysol Epoxy Patch Kit 6C, Hysol Corporation,
0.100 TRUE POSITION
2.54 TRUE POSITION
'.5
0.15
0.035
0.381
0 .
0.028
0.035
0.711
0 .
0.029
0.045
0.737
1.14
3.5
L
p
0.985
1.015
25.02
0.100
.
,
25.78
2.54
.,.
Olean, N.Y. 14761, or equivalent.

~or
drilled
In
temperature
temperature
AWG
(but
measurement,
No. 26) should

not
reference
through)
the thermocouple
be Inserted
the
heat
In
II
sink
(wire
small, shallow
at
the
I'tO
hole
Indicated
point.
6
0.007
0.179
Fig. 22-Suggested
5.7
1.
This zone is controlled for automatic handling. The v.iation

oMthin the zone shall not exceed 0.012 in. (0.279mml.
in actual diametM
(Three LNdsI
(25.78mmJ.
~ b ~ies
between seating plane and 1.015in.

diameter
mounting
arranflllmtlnt
insulated from heat sink).
2.
3.
Measured from maximum
4.
leads having maximum diameter 0.021 in. (0.533mmJ measured at the lUting plane of the
device shall be within 0.007 in. (0.178mml of their true positions relative to the maximum
width tab.
of the actual device.
5.
The deviCI may be measured by direct methods or by the pp and pging

scribed on pp dr~ing
GS-1 of JEOEC public.ltion 12E. May 1964.
6.
Details of outline in this zone optional.
7.
Tab centerline.
CASE TEMPERATURE
heat-sink
larger than
procedure
MEASUREMENT
The specified tempet"atur.reference

point shOllld be used when making temperature
measurements.
A lowmass temperatura probe Of" thermocouple
having wire no larger
than AWG No. 26 should be attached at the temperature reference point.
de
TERMINAL
CONNECTIONS
S2600 SERIES
Lead 1 - Cathode
Lead 2 - Gate
Case, Lead 3 - Anode
S2610 SERIES
Lead 1 - Cathode
Lead 2 - Gate
Case, Heat Radiator - Anode
Lead 1 - Cathode
Lead 2 - Gate
Case, Heat Spreader - Anode
for
52620
SlNiBS (case
527108,
52710D,
junction
silicon
and 52710M
are all-diffused,
three-
having integral
heat
radiators. They are variants of the 2N3228, 2N3525, and

2N4101, respectively."
The 52710 series is designed to meet the needs of many
power-control and power-switching applications in which
heat sinks are required but where the design of special
cooling systems to achieve the full
current rating of the
thyristor is not warranted.
Thyristor
The
radiator
printed-circuit
design of
these devices has tabs to allow
board mounting
and holes to allow chassis
mounting if desired.
Ratings
and
characteristics
given
for
2N4101
in ReA data bulletin File
devices in the 5271 a series.
No.
the
114
100
2N3228,
are
also
2N3225,
applicable
to
the
THYRISTOR
WITH OUT
II
80
in
:;:u
<
wi
-.Jw 60
<~
~r0<
-.JO::
-.Jw 40
<"-:;:
:;:w
~r25
:;:
<
:;:
Heat Radiator
527108 (40504)
2N3228
527100 (40505)
2N3525
52710M (40506)
2N4101
HEAT
FEET/MINUTE
RADIATOR
It
RaJA'
CD 0::
without
Heat Radiatar
FORCED - AIR COOLED, 400

TO 1000
THYRISTOR
WITH
HEAT
RADIATOR
?rz
w
and
RaJA: 28 C/W
RaJA: 40 C/W
20
AVERAGE ON-STATE
CURRENT
[IT(AvTI-A
Fig. 1 - Maximum allowable ambient temperature

V5.
on-state current.
Thyristor
with
9_5C /W =i=
DIMENSIONAL OUTLINE
JEDEC TO-66 WITH HEAT RADIATOR
-2
MOUNTING
TABS
{NOTE 31
92CS
INCHES
SYMBOL
MIN.
MILLIMETERS
MAX.
MIN.
0.620
0.028
0.034
0.750
0.370
0.820
C.3as
0.920
20.83
23.37
1.297
1.327
32.94
33.70
0.546
0.566
13.87
14.37
0.190
0.210
4.83
0.30
0.55
7.62
0.175
0.210
'.44
6.86
,
",
"
l
N
N,
N,
N3
N,
W
0.760
0.270
0.052
1.098
0..
0.099
0.498
0.048
0.066
0.711
19.05
19.30
9.40
9.78
5.33
13.97
5.33
'.65
1.32
1.102
27.89
27.99
0.452
11.38
".47
0.29
0.113
0.502
0.060
0.25
12.66
NOTES
MAX.
15.75
0.864
,b
0
0,
0,
12.75
'.22
1.52
1 Meelur..tiltbonomof"-l.xl~lor
'100J5lftI0889IC,RS
3.R_......-cl
hole
.. ,onpiated.
llf lot pnnled<OfO;U01 boIfd
O.070on.(l11Sld'l
Pin 1: Gate
Pin 2: Cathode
Radiator, Case: Anode
-13383R4
[JClcrBLJD
Solid State
Division
a-Ampere
For Power Switching, Power Control, and
Ignition Applications
Features:
52800A,
controlled
528008,
and 52800D
rectifiers
designed
currents.
These
off-state
to
on-state
Glass passivated
8-A (RMS) on-state
100-A peak surge capability

Shorted-emitter
gate-cathode
between gate and cathode
Center gate construction

turn-on with substantially
Package design suitable
are medium-power
for switching
ac
reverse-blocking
the
when
current
silicon
and de
thyristors
switch
from
the
both
anode
and
gate
the
chip
voltages
are positive.
Negative anode voltages
make these
devices revert to the blocking state regardless of gate-voltage
polarity.
MAXIMUM RATINGS. Absolute-Maximum
NON-REPETITIVE
High dv/dt
Low on-state
... provides rapid uniform

reduced heating effects
voltage
at high current
for mounting
gate-current
on a printed-circuit
diffused
spreading
Gate Open.
high case temperatures

These
5CRs
and permitting
can be used in lighting
reduced
heat-sink
and motor-speed
S2800A
(40867)"
S2800B
(40868)"
S28000
(40869)"
125
250
500
125
250
500
100
200
400
100
200
400
200
100
200
100
200
100
85
85
See Fig. 7.
85
100
100
100
VOLTAGE"
REPETITIVE PEAK OFF-STATE

Gate Open.
VOLTAGE"
RMSON~TATECURRENT
For T C of +80oC and Conduction Angle of 1800.
IT(RMS)
ITSM
ON-STATE CURRENT:
For one cycle of 400-Hz applied principal voltage.

For one cycle of 60-Hz applied principal voltage
For one cycle of 50-Hz applied principal voltage
For more than one full cycle of applied pnncipal voltage
RATE OF CHANGE OF ON-STATE CURRENT
VD
VDROM,
IGT
80 mA,
I, =
0.5 ~s ISee Fig. 3) .
GATE POWER DISSIPATION":

PEAK FORWARD
(fo, 10 ~s max.)
PEAK REVERSE.
.
AVERAGE
(averaging time
TEMPERATURE
16
.
= 10 ms max.l,
0.5
.
-65 to +150
-65 to +100
250
These values do not apply if there is a positive gate signal. Gate must be open or negatively biased.
4-Any values of peak gate current or peak gate voltage which result in an equal or lower power are permissible.
'For
information on the reference point of temperature measurement, see Dimensional Outline.
Numbers
16
See Fig. 13.
0.5
RANGE':
Storage
Operating (Case) .
. .........
Soldering (10 sec. max.l
in parentheses
(e.g. 40867)
are former
ReA
type
numbers.
for faster
size.
control,
capacitor-discharge
ignition circuits, high-voltage
generators,
automotive
applications,
and power-switching
systems.
resistor
board
PEAK FORWARD VOLTAGE"
REPETITIVE PEAK REVERSE

Gate Open.
levels
The unique
plastic package design provides easy package
mounting
and low thermal resistance,
allowing operation
at
Values:
capability
- Low thermal resistance

construction
... contains an internally
Gate Open.
NON-REPETITIVE
ratings
16
0.5
ELECTRICAL CHARACTERISTICS,
At Maximum Ratings and at Indicated Case Temperature (TC)
Unless Otherwise Specified.

LIMITS
CHARACTERISTIC
S2800A
SYMBOL
MIN.
PEAK OFFSTATE
(Gate Open, TC
FORWARD,
REVERSE
TYP.
S2800B
MAX. MIN.
MIN.
TYP.
UNITS
MAX.
CI
VD = VDROM
(REPETITIVE),
VR = VRROM
For iT = 30 A and TC = +250C
Gate Open and T C
0.1
0.1
01
mA
IROM
0.1
0.1
0.1
mA
vT
1.7
2.0
1.7
2.0
1.7
2.0
IGT
15
15
15
mA
15
20
mA
.. ..

VD = 12 V (DC)
R L = 30 11
TC = +250C
INSTANTANEOUS
IDOM
VOLTAGE:
DC GATE I RIGGER CURRENT:

. VD = 12 V (DC)
RL=30rl
TC = +250C
HOLDING
VGT
CURRENT:
= +250C .
iHO
-I
- I
09
11.5
1-
10 1
101201-1
RATEOFRISE
OF OFFSTATE
(See Fig. 2.)
3001
dv/dt
150
20
-I
10/
TURNON
13001-
13012001-
Vips
See Fig. 14.
.......
TIME:
VD = VDROM, iT = 4.5 A. iT = 2 A
IGT = 80 mA, 0.1 J1S rise time
TC = +250C
(See Fig. 5.1
COMMUTATED
oj
VOLTAGE:
7J
aooe
GATE CONTROLLED
I -I
09 11:,
See Fig. 10.
S.e Fig. 11
VD = VDROM
Exponential rise, T C = +1
See Fig. 9 .
CIRCUIT
S28000
MAX.
CURRENT:
= +100
INSTANTANEOUSONSTATE
CRITICAL
TYP.
TURNOFF
tgt
1.6
2.5
1.6
2.5
16
2.5
ps
tq
10
35
10
35
10
35
ps
ROJC
2.2
2.2
2.2
ROJA
60
60
60
TIME:
VD = VDROM . iT = 2 A
Pulse Duration::; 50 J1S
dv/dt = 200V/ps, di/dt =-10 Alps
IGT = 200 mA at turn on, TC = +750C
(Se. Fig. 4.1
THERMAL
RESISTANCe:
Junction-la-Case
Junction-ta-Ambient
. . . . . . . . . . . . . . . ..
C/W
I,
r~~-----~~---,'
,I
VRSO,..----l
:"-V
RROM
*"0.63+
t"
RC
oJ_-- ------, --- ----/--
Int
I di/dt
VIO"T'-~
difd!
I
I
I
ITM---I
SO$ IRM
r'"
--ff-T-"
I
--~
10
--;J,I'R
I
I
VT
----j __ ,0
d. d'
'}-"
Fig. 4-Relationship between instantaneous on-state current and

voltage, showing reference points
commutated turn-off time (tgJ.
for definition
of circuit-
CURRENT
WAVEFORM;
SINUS01D/L
LOAD: RESISTIVE
OR INDUCTIVE
CONDUCTION,
ANGLE:
180
CASE TEMPERATURE:
MEASURED
AS
OUTLINE
70
50
DC
GATE
100
TRIGGER
CURRENT
150
AVERAGE OR RMS ON-STATE
(lGTl-A
92C5-19058
6
CURRENT
8
[IT(AV)
10
OR
12
IT(RMSl]-A
92SS-3982Rl
8
I
468
10
NUMBER
OF FULL
CYCLES
468
100
IN
SURGE
1000
DURATION
92LS-1351R5
REVERSE
GATE CURRENT
03
( I GR 1 -
02
A
01
AVERAGE GATE
POWER LIMIT
1500
~~
",I
"'=
I<~
,
1250
>
~~
",'"
t-'"
"''''
I<'J
--,0
tooo
750
",>
U'"
t-t1<'"
u~
......0
500
250
0
20
DIMENSIONAL
RMS
ON STATE
6
CURRENT
10
[IT(RMS~-A92SS'4163RI
OUTLINE
(JEDEC TO-220 AB)

INCHES
SYMBOL
r-- 1
LI__
H
\EAIlHG
PLAHE
LQ?
"
F
TEMPERATURE
MEASURING POINT
b
bl
b2
D
E
El
E2
.,
F
No.1 - Cathode
Mounting Flange, NO.2 - Anode
No.3
- Gate
MAX.
MIN.
MAX.
0.160
0.025
0.012
0.045
0.575
0.395
0.365
0.300
0.180
0.080
0.020
0.190
0.040
0.020
0.055
0.600
0.410
0.385
0.320
0.220
0.120
0.055
0.265
4.07
0.64
0.31
1.143
14.61
10.04
9.28
7.62
4.57
2.03
0.51
5.97
12.70
4.B2
(1.135
L
Ll
0.500
0.141
0040
0.100
MI LLIMETERS
MIN.
0.250
0.145
0.060
0.120
3.582
1.02
2.54
1.02
0.51
1397
15.24
10.41
9.77
8.12
5.58
3.04
1.39
6.73
6.35
3.683
1.52
3.04
SCREW.
6-32
~"'OT"'V""l"'8LEFROMRC'"
NR231A
~~~:~~GULAR
METAL
AVA'LABLE AT~UBLIS'HO
HAROWilREPR,CU
OF103B
M'CA
'NSULATOR
HOLE DIA "O.1450.1.1m
~;:~~'::~\ItCE
(CHASSIS)
HEATS'NK
4953347
INSULATING
@]
e---
METAL
lOCK
WASHER
WASHER
HEX
NUT
BUSHING
1.0. ~ 0.156 m.14.00 mml

~~~~~~~1~2~1;~~
MAX.
'""u,"wn" ""'"
NOT
AYAILA9LE fROM RCA
SOlDERlUG~
HEXNUT
shown with your ReA sales representative
or supplier.
All-Diffused Silicon Controlled Rectifiers

for Inverter Applications
53700B, 53700D, and 53700M* are all-diffused threejunction silicon controlled rectifiers intended for use in
inverter applications such as ultrasonics and fluorescent
lighting. They feature fast turn-off, high dv/dt, and high di/dt
characteristics, and may be used at frequencies up to 25 kHz.
Each of these
amperes at a
53700D, and
voltage ratings
devices has an rms on-state current rating of 5

case temperature of +600C. The 53700B,
53700M have forward and reverse off-state
of 200, 400, and 600 volts, respectively.
RMS OnState Current 5 Amperes at TC = + 600 C
Forward and
Type
IT(RMS)
@
Reverse
Voltage
TC
+600 C
S3700B (40553)-
200
S37000 (40554)-
400
S3700M (40555)-
600
ANODE TOCA THODE

VOL TAGECURRENT CHARACTERISTIC
High dv/dt Capability
100 V/IlS minimum

High di/dt Capabi lity 200 A/Ils
Shorted Emitter and Center Gate Design
Removes
restrictions
on forward
and
reverse gate voltage and peak gate

current
Principal voltage is the voltage between lhe main terminals. Principal voltage is called positive, or forward,
when the anode potential is higher than the cathode potential,
and called negative when the anode potential is lower than
the cathode potential.
Principal
and cathode.
current is the current flowing between anode
Absolute-Maximum Ratings, for Operation with Sinusoidal AC Supply

Voltage At Low to Ultrasonic Frequencies, and with Resistive or Inductive
MAXIMUM
RATINGS
Non-Repetitive
Load
VALUES
UNITS
S3700B
S37000
S3700M
330
660
700
200
400
600
700
700
700
3.2
3.2
3.2
80
Peak Reverse Voltage,
VRSOM
Gate Open. . . . . . . _. . . . . . . . . . ...
Repetitive
Peak Reverse Voltage,
VRROM
. . . ~. . . . . . . . . . . . . . .
Gate Open
Repetitive
Peak Off-State Voltage,
VDROM
Gate Open. . . . . . . . . . . . . . . . . . ..
On-State Current:
For case temperature
of +600 C and 60 Hz
Average DC value at a conduction
RMS value, IT(RMS)
..........
............
............
angle of 1800, IT(AV)
Peak Surge (Non-Repetitive)
See Fig.9
On-State
Current, ITSM
For one cycle of applied voltage
.....
80
80
For more than one cycle of applied

vol tage.
See Fig.ll
. . . . . . . . . . . . . . . . . . . .
12t
Sub-Cycle for Fusing,
For a period of 8.3 ms - ..........

Critical
25
25
25
A2s
200
200
200
A/~s
Rate of Rise of On-State Current,
Critical
di/dt
= Vmmo
IGT = 50 mA,
VOX
rated value,
0.1 ~s rise time ......
Gate Power Dissipation*

Peak, Forward or Reverse,
duration,
Average,
for 10 ~s
P GM ..............
PG(AV)
...............
13
13
13
0.5
0.5
0.5
c
c
Temperature:
Storage,
Operating
T stg'
.................
<Case),
TC ............
-40 to +150
-40 to +150
-40 to +150
-40 to +100
-40 to +100
-40 to +100
*Any values of peak gate current or peak gate voltage to give the maximum gate power are permissible.
For information on the reference
point of temperature
measurement,
see Dimensional
Outline.
Characteristics
at Maximum Ratings
(unless otherwise
Case Temperature (T C)
S3700B
Min.
Voltage,
Off-State
UNITS
Typ.
S3700D
S3700M
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
V(BO)O
Gate Open
At T C = +1000 C . . . . . . . . . . . . ..
Peak
ancl at Inclicatecl
LIMITS
CHARACTERISTICS
Breokover
specifiecl),
200
400
600
0.5
0.5
0.5
mA
0.3
1.5
0.3
1.5
0.3
1.5
mA
2.2
2.2
2.2
15
40
15
40
15
40
mA(dc)
1.8
3.5
1.8
3.5
1.8
3.5
V(dc)
20
50
20
50
20
50
mA
100
250
100
250
100
250
V/~s
0.7
0.7
0.7
~s
~s
Current:
Gate Open
At TC = +1000 C
Forward,
VOO
Reverse,
VRO
100M
V(BO)O rated value .......

IRROM
..............
VRROM
Instantaneous
On-State
Voltage,
vT
For an on-state current of 30 A and

TC = +250 C ... - ............
(See Fig.13!
DC Gate Trigger Current,
IGT
At TC = +250 C ............
- ..
(See Fig.S)
DC Gate Trigger Voltage,
VGT
At TC = +250 C ...............
(See Fig.S)
Holding
At TC
Critical
Valtage,
Current,
IH
+250 C
Rate
of Rise
Critical
..............
of Off-State
dv/dt
VOO = V(BO)O (rated value), linear

rise, and TC = +800 C .........
(See waveshapes of Fig.2)
Gate-Controlled
Turn-On
Time,
t t
g
VOX = V(BO)O rated value, ITM

2 A, IGT = 300 mA, 0.1 ~s rise
time, and TC = +250 C .........
(See waveshapes of Fig.3)
Circuit-Commutated
Turn-Off
Time,
<Reverse Recovery Time + Gate

Recovery Time)
VOX = V(BO)O rated value,
ITM = 2 A, 50 ~s min. pulse
width, VRX = 80 V min.,
rise time = 0.1 ~s, dv/dt =
100 V/~s, diR/dt = 10 A/~s,
~T = 100 mA at turn-on,
GT = 0 V at turn-off, and
TC = +800 C ...............
(See waveshapes of FigA)
Vox
oJ_-- ------ --- -----
r--------Vox
j,o%
POINT-I
!-----
di/d'
-~~~-
I
dV/dl~'
tgri
------J
I
I
..
._.
--
OF POSSIBLE TRIGGERING
POINTS
FOR VARIOUS TEMPERATURES.
PERMITTED
PULSE
FOR INDICATED
FOR_ARO
WIDTHS
PEAK
GATE POWER
=
=
10
>
:
w
64 __
MAXIMUM
~~~~M~GMEG:OTREI~~:~~~~O
Tj--IOOC
./
./
.1000 C
1.0
--
6
4
/
2
0.1
"-
"-
"-
....~'"
MAXIMUM
CURRENT
JUNCTION
.1000 C
Tj'"
.25 C
<,,,-<'
1m,
"""
1"-
0.5
ITjl
_woe
I
I
.1000 C
6
6
0.1
~
K)
MAXIMUM
GATE
RESISTANCE
6
I~
GATETOCATHOOE
15
20
w
~
2S
~
..
CURRENT
t----
AVERAGE GATE
DISSIPATION
LIMIT
GATE TRIGGER
FOR INDICATED
TEMPERATURE
./
)of;::
MAXIMUM VOLTAGE
AT WHICK
NO UNIT WILL TRIGGER FOR
Tj'"
,/
I",
~\~"\
"'-
lOOps
" "'-
'"
lOp.s
RESISTANCE
ITj)
~25 C
~v
GATE
--
0
0
\'"
...
- AMPERES
WATT
"'~~
~~~"'..,
Il~
~Il
I
2
3
4
AVERAGE ONSTATE CURRENT [IT(AY)]AMPERES
SUPPLY fREQUENCY 60 Hz SINE WAVE

CASE TEMPERATURE
PRIOR TO SURGE 600 C
LOAD RESISTIVE
REPETITIVE PEAK REVERSE VOLTAGE (VRROM) MAXIMUM RATED VALUE
AVERAGE ON-STATE CURRENT OT(AVl1- MAXIMUM RATED VALUE
_'0
~~
~1
~!
H-,-l-
r-h
I,
'\.
~~
~~
i'
i~
~ t;;zo
I
I
i!!
II-L
I I
II
I'
~a40
I~ii
III
III
I
I
:1;1
~ ~60
w~
PULSE HEIGHT 10 A (PEAK)

PULSE .IDTH AS INDICATED
VORXN.
RATED VALUE
WAVEFORM SINUSOIDAL
THERMAL IMPEDANCE, JUNCTIONTI).
CASE SOC!.
I
I
II
II
0.5
INSTANTANEOUS
. ..
1.5
ON-STATE
--t
2
VOLTAGE
..
2.5
('T)-YOLn
9'2LS-2344
-DC
SCR2
L,
--
L,
0,
".
SIX eO-WATT
LAMPS CONNECTED IN
PARALLEL
"
",
'5
"2
"
02
"5
L2
",
"
D.
"6
SCRf
C1 C2:
C3:
C4 C5:
D1 D2:
D3 D4:
L1 L2:
L3:
R1 R2: 1.2 kQ. 5 W

R3: 200 Q. 10 W
T: Core, 8 pieces of Indiana General No.
CF-60Z Material 05, or equivalent.
Cross Section, 8 cmZ
N1 N6 - 30 Turns of No.1S Magnet Wire
N2 N5 - 13 Turns of No.1S Magnet Wire.
2 Stranda
N3 N4 - 52 Turns of No.1S Magnet Wire.
2 Strands
0.01 >IF. 1200 V <Ballast Capacitors)

0.01 tJF. 600 V
0.02 tJF. 600 V
Fast-Recovery
Diodes. 6 A. 600 V
1N574
32 >IH
131 Turns of No.15 Magnet Wire on
Arnold Engineering Core No.A4-04117.
or equivalent
",
0,
""
1'5
R4 R12 R15 R\7' R1S:

R5 Rll:
R6:
R7:
RS' R9' R13' R\4' R16:
R19:
R20:
R21 R22:
TIt TZ:
Q1: RCA-4043S
Q2' Q3' Q4: RCA-2N3053
c1 C2: 0.003 tJF. 100 V
C3 C4: 0.02 >IF. 100 V
C5: 25 tJF. 25 V. electrolytic
DI, D2, D3: Transitron type TIG, or equivalent
D4: Motorola type 1M20Z1O. or
equivalent
Neon Lamp: GE type NE-S3. or equivalent
R1 R3: 1 kQ. 1/4 watt
R2 RlO:~
kQ. 1/4 watt
Fig. 15- Typical
trigger pulse generator
for 500watt,
8kHz
fJuorescent/ight
control
'"
".
"6
22 kQ. 1/4 watt

10 kQ potentiometer
10 kQ. 1/4 watt
1.5 kQ. 1/4 watt
6S0 Q. 2 watts
5.6 kQ. 1/4 watt
33 kQ. 1/4 watt
10 Q. 1/4 watt
Sprague Pulse Transformer type
42Z109. or equivalent
inverter
circuit.
.500
.470
I:;,~e::.~,
340 (B 64)
('~I;O)
DETAILS
IN THIS
075
OF OUTLINE
ZONE OPTIONAL
.107
093
272
( 236
2 MOUNTING
210
.190
.152
.142
(533)
4.83
Pin 1: Gate
Pin 2: Cathode
Case: Anode
CIA
HOLES
(3.86)
. 3.61
File No. 690
Thyristors
[JU(]5LJD
53704A
537048
537040
53704M
537045
Solid State
Division
53714A
537148
537140
53714M
537145
For Inverter Applications
Features
Fast turn-off time-S J.l.S max,
High di/dt and dv/dt capabilities
Shorted-emitter gate-cathode construction
... contains an internally diffused
resistor between gate and cathode
S3704A,B,D,M,S
H-1340
JEDEC TO-66
~Package
100 V
Types
To-66
To-66 with
Heat Radiator
S3714A,B,D,M,S
With Integral Heat Radiator
H-1470A
Center gate construction .... provides

rapid uniform gate-current spreading for
faster turn-on with substantially reduced
heating effects
400 V
Types
600 V
Types
700V
Types
53704A
200 V
Types
S3704B
537040
S3704M
S37045
S3714A
53714B
S37140
53714M
S3714S
RCA-S3704 and S3714-series types are all-diffused, silicon con- power supplies, induction heaters, cycloconverters, and fluotrolled rectifiers (reverseblocking triode thyristors) designed for recent lighting. These types may be used at frequencies up to
inverter applications such as ultrasonics, choppers, regulated 25 kHz.
MAXIMUM
RATINGS,
Absolute-Maximum Values:
NON-REPETITIVE
PEAK REVERSE
Gate Open ..
NON-REPETITIVE
.
PEAK OFF-STATE
Gate Open
REPETITIVE
PEAK REVERSE
Gate Open
TC
60C. conduction
angle
OF ON-STATE
700
800
150
300
500
700
800
200
400
600
700
VDROM
100
200
400
600
700
'T(RMSI
'TSM
CURRENT
Peak Reverse (for 10 ~s max., See Fig.

Average (averaging time = 10 ms max.l
TEMPERATURE
RANGE:
Storage
Operating (Case)
di/dt
12t
PGM
PRGM
81 ................
PG(AV)
.
.
PIN TEMPERATURE
lOuring soldering):
At distances ~ 1/32 in. (0.8 mml from seating
for 10 s max.
.
if there
measurement
500
100
'T(AVI
of gate current
300
VDSOM
180
VD
VDROM' IGT
50 mA, tr
0.1 !'s (See Fig. 11)
FUSING CURREN"';, (for SCR protection):
T J = -40 to 100 C, t = 1 to 8.3 ms
Peak Forward (for 10 IJSmax" See Fig. 9) ....
Any product
150
VRROM

ON-STATE CURRENT:
60 Hz (sinusoidal)
.
For more than one full cycle of applied principal voltage
For temperature
S3704S
S3714S
VOLTAGE:
These values do not apply
S3704M
S3714M
VRSOM
Average ..
S3704D
S3714D
S3704B
VOLTAGE:
RMS
RATE OF CHANGE
S3714B
VOLTAGE:
.
VOLTAGE:
.
REPETITIVE
PEAK OFF-STATE
Gate Open ..
ON-STATE CURRENT:
S37D4A
S3714A
is a positive
and gate voltage

reference
point,
Tstg
TC
plane
Tp
..
..
..
...
..
..
results
in a gate power
see Dimensional
Outline.
80
See Fig. 5
200
..
....
-40
40
.
is permitted
A
A
..
..
AI!'s
13
13
0.5
W
W
W
to 150
to 100
..
c
c
225
..
biased.
less than the maximum
..
..
....
25
gate signal. Gat~ must be open or negatively

which
5
3.2
See Figs. 2,3,4
LIMITS
SYMBOL
CHARACTERISTIC
UNITS
FOR ALL TYPES

Except as Specified
MIN.
TYP.
MAX.
0.5
0.3
3
1.5
mA
2.2

(Gate open, TC = 100C)
Forward Current (100M) at Vo
Reverse Current (I ROM) at VR
Instantaneous
Holding
Gate open, T C
Critical
lOOM
IROM
On-State Voltage:
iT = 30 A (peak), TC
Instantaneous
= VOROM ........
= VRROM ........
25C
. .. .. .......... ...
....... . . ........ .. . .... .
vT
See Fig. 7
Current:
25 C
........................
Rate of Rise of Off-State
iHO
20
dv/dt
100
250
IGT
15
50
mA
Voltage (See Fig. 12):
Vo = VOROM' exponential voltage rise,

Gate open, T C = 80C . . . . . . . . . . . . . . . . .
... .. ..
V/IJ.S
OC Gate Trigger Current:

Vo = 12 V (de), RL
30 n, TC = 25C
. . ... ... . .
. .. . . .. . ... ............ . .
40
mA
See Fig. 9
OC Gate Trigger Voltage:
= 12 V (de), RL = 30 n, TC = 25C ...........

For other conditions ..........................
Vo
VeT
tgt
0.7
to
1.8
13.5
See Fig. 9
Gate Controlled Turn-On Time:

(Oelay Time + Rise Time)
For VOX = VOROM,
IT = 2 A (peak), T C
Circuit
VOX
dv/dt
VGT
Thermal
IGT = 300 mA, tr = 0.1 IJ.S,

25C (See Fig. 10) ..........
Com mutated Turn-Off
/-IS
Time:
= VOROM, iT = 2 A, pulse duration = 50/-ls,

= 100 V//-Is,-di/dt
= -10 AI/-IS, IGT = 100 mA,
= 0 V (at turn-off), TC = 80C (See Fig. 13) ...
Resistance, Junction-to-Case
.. .. . . .. . . . . .
ROJC
/-IS
C/W
FORCED - AIR COOLED,
THYRISTOR
WITH
THYRISTOR
WITHOUT
400
HEAT
TO 1000
FEET I MINUTE
RADIATOR
HEAT
RADIATOR
?
~
ii5
,,0
".
j ~ 60
'"
,,::>
;<>0"
~~
"o.
"
::>>"'"
;!
x
""
2
CURRENT
CURRENT
WAVEFORM.
[ITIAVil-A
SINUSOIOAL
LOAO
RESISTIVE OR INOUCTIVE
CONOUCTION ANGLE.
(81)0
~
10 _ ..
~
<5
~
2
AVERAGE
SUPPLY FREQUENCY"
CASE TEMPERATURE
LOAO RESISTIVE
3
ON-STATE
CURRENT[IIT(AVIU-A
60 Hz SINE WAVE
PRIOR TO SURGE" 60 C
REPETITIVE
PEAK REVERSE VOLTAGE (VRROMI'
MAXIMUM RATEO VALUE
AVERAGE ON-STATE CURRENT OT(AV)]'
MAXIMUM RATEO VALUE
PULSE HEIGHT.
10 A (PEAK)
PULSE WIOTH AS INOICATEO
VORXM'
RATEO VALUE
WAVEFORM.
SINUSOIOAL
THERMAL IMPEOANCE,
JUNCTION-TOCASE.
5' C/W
I
8
\0
SURGE CURRENT
100
OURATION
- CYCLES
i
"',
~
z
~
~
~
~
>-
15
~
~
w
or
~
~
10
1.5
0.5
INSTANTANEOUS
ON-STATE
FOR VARIOUS
25
VOLTAGE
100 SHAOEO AREA INOICATES

LOCUS
8
OF POSSIBLE TRIGGERING
POINTS
TEMPERATURES.
('T)-V
PERMITTEO
PULSE WIOTHS
FOR INOICATEO
PEAK
FORWARO GATE POWER
11'<-
>
'-?
~
~
"'
~
10
8=
6-
'"
'"
'"~
JUNCTION
TEMPERATURE
"-
:;;;>
,,/
V
.100 C
"- I'.
--
6
4
MAXIMUM
.100
+250
1 ms
"-
FOR INOICATEO
JUNCTION
TEMPERATURE
Tj"
0.5 WATT
IT;I
MAXIMUM VOLTAGE
AT WHICH
Tj. +1000 C
8
0.1
GATE-TO-CATHOOE
1.0
CURRENT
<;"'~
~~"i>
"/' ------ ~I I
!
GATE TRIGGER
CURRENT
_400
e,\c,"\
,,-'l-~
AVERAGE GATE
DISSIPATION
LIMIT
1.0
0.1
lO,u.s
-~
"-
./
,,/ V
l~s
Ti'" 40C
'" ,
10011
+250 C
(T;I
4_.
~~~~~GMEGF~TREI~~:~~~~D
f".-
Ii
MAXIMUM GATE
RESISTANCE
--
>-
>
w
>
'"
~
~
'"
~
~
~
w
~
or
(IGT)-A
./
~~"-
.;
L
oj --- ------ -------,
/---
ditd.
I
ITM--'
r--------'ox
-------- :----iVDX
L~~:OINT:::L-
f-,-l
~VRX
VRXM
I
I
I
I
I
I
1-
-----0
I
I
'n --~---
19,
------l
I
~l'l
I
------I
Fig. 13 - Rt-/ationship between off-state voltage, reverse voltage,

on-state current, and reverse current showing reference
points defining turn-off time (tq).
SUPPLY
SUPPLY
VOLTAGE
VOLTAGE
~II
II~
*
FOR
ADD1TlONAL
ON GATE TRIGGER
REFER
TO JEDEC
INFORMATION
CIRCUITS,
STANDARD
NQ. 7 SECTION 6.204.2.
ET(.
ISOV DC
r
SCR2
LI
N,
C,
---
C2
03
N2
C.
N3
R,
0,
R3
C3
SIX eo-wATT
LAMPS CONNECTED IN
PARALLEL
N.
R2
C5
N5
02
D.
L2
N6
SCR1
Cl, C2:
C3:
C4, C5:
D l' D2:
D3, D4:
Ll, L2:
L3:
0.011JF', 1200 V <Ballast Capacitors)

0.01 IJF', 600 V
0.02 IJF', 600 V
F'ast-Recovery Diodes, 6 A, 600 V
lN574
32IJH
131 Turns of No.15 Magnet Wire on
Arnold Engineering Core No.A4-04117,
or equivalent
R J' R2: 1.2 kQ, 5 watt

R3: 200 Q, 10 watt
T: Core, 8 pieces of Indiana General No.
CF'-602 Material 05, or equivalent.
Cross Section, 8 cm2
Nl' N6 - 30 Turns of No.1S Magnet Wire
N2, N5 - 13 Turns of No. IS Magnet Wire,
2 Strands
N3, N4 - 52 Turns of No.1S Magnet Wire,
2 Strands
f-15O
DC
O2
RS
0,
R7
R.
R.
R'2
D.
0.
R,.
R,.
R"
'
F?II
Ql: RCA-40438
Q2' Q3' Q4: RCA-2N3053
Cl, C2: 0.0031JF', 100 V
C3 C4: 0.02 IJF'. 100 V
C5: 25 IJF'. 25 V. electrolytic
DI,
2, 03: Transitron type TIC, or equivalent
D4: Motorola type.1M20ZIO. or
equi.va\ent
Neon Lamp: CE type NE-83, or equivalent
Rl R3: 1 kQ. 1/4 watt
R2 RIO: ISO kQ. 1/4 watt
R4, R12, R15 R17' R1S:

R5 Rll:
R6:
R7:
ij,S' R9' R13 R14, R16:
R19:
R20:
R21 R22:
TI, T2:
22 kQ, 1/4 watt

10 kQ potentiometer
10 kQ. 1/4 watt
1.5 kQ. 1/4 watt
6S0 Q, 2 watts
5.6 kQ, 1/4 watt
33 kQ. 1/4 watt
10 Q. 1/4 watt
Sprague Pulse Transfo:'mer type
42Z109. or equivalent
DIMENSIONAL
2 SCREWS.
6-32
OUTLINE
FOR TYPES S3714A,
B, C, D, M, and S
JEDEC TO-66 WITH HEAT RADIATOR
~NOT"'V""l"'8LEFRO"'l~'"
e
'.
OF31A
MICA INSULATOR
00
M"",w,," "V,"
o
~
HEATStNK
leHASSISI
O
6
0>
Ei>
495334-7
2 NYlON
INSULATING
BUSHINGS
m. (4_00 mm)
1.0." 0.156
SHOULDER
m.
-::...
0250
U"
CIA. =
mmj
16.40
SHOULDER
THICKNESS
OOSO '".11.27
2METAL
mml MAX.
WASHERS
2 LOCKWASHERS@
2HEX.NUTS@
2S0LDER
LUG~
2HEX.NUTS@
--
TEMPERATURE
-I

hardware policies may differ; check the availability of all items
or supplier.
<-
~51~s,.UREMENT
-2
MOUNTING
TABS
(NOTE 3)
92CS-133B3R4
DIMENSIONAL
JEDEC TO-66
OUTLINE
FOR TYPES S3704A,
B, D, M and S
INCHES
SYMBOL
MIN.
'"
D
Dl
D,
.,
'1
"
N
N,
N,
N3
N.
W
MIN
0.250
0.028
b
D
D,
..,,
"
,
""
0.470
0.190
0.093
0.050
0.360
0.142
0.958
0.570
MAX.
MIN
MAX.
0.340
0.034
0.620
0.500
0.210
0.107
0.075
0.050
6.35
0.711
8.64
0.863
15.75
12.70
5.33
2.72
1.91
1.27
0.152
0.962
0.350
0.145
0.590
11.94
4.83
2.36
1.27
9.14
3.61
24.33
14.48
0.190
0.30
0.175
0.270
0.052
1.
0.448
0.099
0.498
0.048
MIN.
0.711
19.05
9.40
20.83
32.94
13.87
4.83
7.62
'.44
6.86
1.32
0.065
1.102
0.452
0.113
27.89
11.38
0.25
0.502
0.060
112.65
1.22
MAX.
NOTES
15.75
0.864
19.30
9.78
23.37
33.70
14.37
5.33
13.97
5.33
1.65
27.99
11.47
0.29
12.75
1.52
1 Me....red ~l OOllom 01 hNI r.clIIlOl
MilliMETERS
INCHES
SYMBOL
0.028
0.750
0.370
0.820
1.297
0.546
MILLIMETERS
MAX.
0.620
0.034
0.760
0.385
0.920
1.327
0.566
0.210
0.55
0.210
2 0035
NOTES
In 10889) C R S.!In
3 RKOmmended hole "'e

0070 In. II 778l dl~
P.~led
10< p<lnled-C"cull bo;Ird IS
,
,
3.86
24.43
8.89
3.68
14.99
Pin No.1 - Gate
Case/Heat
Pin No.2
- Main Terminal
Radiator
- Main Terminal
OO(]5Lm
Thyristors/Rectifiers
S3705M D2600EF
S3706M D2601DF
D2601EF
Solid State
Division
These RCA devices are silicon controlled rectifiers and silicon

Irectifiers intended for use in horizontal-deflection circuits of
large-screen color-television receivers_A simplified schematic
diagram for
rectifiers
the
utilization
of
these SCR's and silicon
is shown below. For detailed information
on the
operation of this new deflection circuit, seeApplication
Note
AN-3780.
The S3705M (40640)*
02601 EF (40642)*
components.
controlling
They
silicon controlled-rectifier
silicon
provide
the horizontal
and the
rectifier
are the trace circuit
bipolar
switching
action
for
yoke current during the picture
tube beam-trace interval.

The S3706M (40641) * silicon controlled-rectifier
02601 OF (406431*
silicon rectifier
and the
are the commutating
(retrace) circuit components. They control the yoke current

during the retrace interval.
The 02600EF
(40644)*' silicon rectifier is used as a clamp in
the trace circuit to protect the circuit components from

excessively high voltages which may result from possible
arcing in the picture tube or high-voltage rectifier.
Designed
Supply
for off-the-line
voltages:
Outstanding
operation:
108 to 129 Vac
performance
SILICON
CONTROLLED
RECTIFIER AND
SILICON
RECTIFIER
COMPLEMENT
and reliability
B+ = 155 V
02600EF
026010F
02601EF
For Horizontal
Deflection Circuits
of Large-Screen
ColorTV Receivers
High picture-tube
dc overage (max.)
Can fully deflect
to 900, 1-7/16"
tages
(nom.
value)
beam
JEOEC
00-26
current
capability:
to 1.5mA
picturetubes
having deflection
angles
neck diameters,
and 25-kV ultor vol-
Trace
Repetitive
Peak
Off-State
With gate open

Repetitive
Peak
Voltage
With gate open

On-State
Current:
For case temperature of +600C and 60 Hz

Average DC at 1800 conduction angle.
IT(AV)
RMS
'T(RMS)
Peak
SCR
600
.
Reverse
Commulaling
SCR
Voltage
.
Surge (Nan-Rep"titive)
On-State
Current:
For one cycle of 60 Hz voltage.

Critica
I Rate af Rise
of On.State
Current:
For VDX = V(BO)O rated value,

IGT = SOmA, O.I~s rise time
Gate
Power
Dissipationo:
Peak (forward or reverse)

for 10 ~s duration
Temperature
Rangeb:
-40 to +IS0
-40 to +100
Storage
.
Operating (case) ..
a Any ,alues
or peak gate current or peak gate
For information
on the reference
point
voltage
of temperature
to give
the maximum gale
measurement,
power are permissible.
see Dimensional
dV/dl---....,'
:----.l
I
I
I
I
- ----~-------o
tgri
I
I
VRX
Outline.
S3705M
S3706M
Trace SCR
Min.
Typ.
Max.
Breakaver Valtage:
With gate open
At TC : + 100C
At TC : +800C
Peak Farward Off-State Current:
With gate open,
VOO: V(BO)O rated value
At TC : +lOOoC
At TC : +800C ................
Instantaneaus On-State Valtage:
For an on-state current of 30 A,
TC : +250C
DC Gate Trigger Current:
At TC : +250C
V(BO)O
V(BO)O
100M
100M
0.5
1.5
vT
2.2
IGT
DC Gate Trigger Valtage:

At TC : +250C
VGT
Therma I Resi stance:

J unction-to-Case
ROJC
Circuit-Commutated Turn-Off Time:

(Reverse recovery time + gate
recovery time)
Trace SCRAt ITM: 6 A (tr: 25 I'S, di/dt: 2.5 A!l's),
Vo : 0 V (prior to turn on),
VO: 400V (reapplied at 175V!l's),
VR : 0.8 V (min.),
IGT: 100mA,
VGK(bias): -30V (68 [) source),
f: 15.75 kHz,
TC : 70C
.
Commutating SCRAt ITM: 13 A (y, sine wave 71'S base,
initial di/dt : 20 A!l's to 3 A),
Vo : 350 V (prior to turn on),
dV!dt:
400V!l's (to 100 V),
VR: 0.8 V (min.)
IGT: 100mA(tp: 31'S, tr: 0.2I's),
VGK(bias): -2.5V (47 [) source
during turn off),
f: 15.75 kHz,
TC : 70C
Commutating SCR
Min.
Typ.
Max.
0.5
1.5
mA
mA
2.2
15
30
15
30
mA(dc)
1.8
1.8
V(dc)
C!W
S3705M.S3706M,D2600EF,D2601DF,
File No.354
D2601EF
SILICON RECTIFIERS
D2601EF
MAXIMUM RATINGS:
Trace
D2601DF
D2600EF
Commutating
Clamp
Silicon Rectifiers
Non-Repetitive
Peak Reverse Voltagec.
VRM(nonrep)
700
800
700
VRM(rep)
550
450
550
IF
IF(RMS)
IFM(rep)
IFM(surge)
1
1.9
1
1.6
6.5
70
6
10
1
0.2
0.3
20
A
A
A
A
Peak Reverse Voltaged ..
Repetitive
Forward Current: d
DC .........
RMS ........
Peak Repetitive.
Peak Surge e ...
Ambient Temperature
Operating.
Storage .......
Range:
TA
T stg
Lead Temperature:
For 10 seconds maximum.
...........
-40 to +150
-40 to +175
255
~
~
e
e
CHARACTERISTICS:
Max. Instantaneous
Forward Voltage Drop:
.......
At IF = 4 A, T A !o 75C ....
vFM
1.3
1.3
Max. Reverse Current (Static): I

At Te = 100C.
At T A = 25C ......
IRM
IRM
0.25
10
0.25
10
0.25
10
mA
~A
Reverse Recovery Time:

At IF = 20mA, IR = ImA, Te = 25C.
trr
1.1
1.1
1.6
max
~s
Turn-On Time:
At IF = 20 mA, Te = 25C
..........
ton
0.3
0.3
0.3
max
~s
Peak Turn-On Voltage:

At IF = 20 mA, Te = 25C
..........
max
C Pulse width
3 pulses.
10 J..LS, pulse
repetition
fate
:= 15.7 kHz,
For ambient
temperatures
up to 45C and maximum thermal
resistance
from reference
point to ambient
of 4SoC/W, with
devices operating in circuit of Fig.l.
Pulse
width
At max.
peak
=3
ms.
reverse
voltage
and zero
forward
current.
125
ISO
=l=
S3705M, S3706M
JEOEC
340 (864)
.500
.470
(9
lSEATING~
14l-=----
nc " ~ n.
DETAILS
IN THIS
00-26
075
1194
t-~
360
JEOEC
r
[(m)
1
('~I:D)
250~
D2600EF, D2601DF, D2601EF
TO-66
.962 (24.44)
.958
CATHODE
LEAD
(NOTE I)
OF OUTLINE
ZONE
OPTIONAL
24.33
1.4 (35.56)
MIN.
.027-.036
DIA.
(69- 91)
POLARITY
SYMBOL
(NOTE2)
REFERENCE
POINT
FOR CASE TEMPERATURE
MEASUREMENT
~j
(478)
2
MOUNTING
.152
.142
ANODE
LEAD
HOLES
CIA (3.86)
. 3.61
.027-.036
1691-~9Il
DIA,
,.220-.260
(5.59 -6 .. 60l
DIA
2 PINS
g~:
OIA.
(.~i)
GLASS
INSULATION
<>
+
Note 1: Connected
Note 2:
Pin 1: Gate
Pin 2: Cathode
Case:
Anode
1.4(35.56)
MIN.
92CS-14457R3
to metal case.
Arrow indicates direction

of forward
as indicated by de ammeter.
(easy) current
flow
Incorporatmg
ReA Solid State Devices In equipment,
It is
recommended that the designer refer to "Operating Considerations
for
ReA Solid State Devices",
Form No.1 CE402, available
on request
When
from
RCA Solid
State
DIvIsIOn,
Box 3200,
Somerville,
N.J. 08876.
OOCTI3LJ1]
Solid State
Division
5- Ampere Silicon
Controlled Rectifier
For Applications
in Pulse Power Supplies
To Drive GaAs Laser Diodes
Features:
High peak-current
capability
Good current-spreading
attributes
Symmetrical
gate-cathode
construction
density, rapid electrical conduction,
heat dissipation
Controlled
minimum holding current
Hermetic construction
Type
S3701 M- is a silicon
use in circuits
diodes.
A simplified
1. Detailed
RCA
circuit
Note
of a laser pulser
on circuits
AN-4469,
SCR
rectifier
pulses to drive
for RCA GaAs Injection
conventional
on-state
a laser
controlled
generate
information
Application
Supplies
The
which
intended
injection
is shown
of this
type
"Solid-State
for
pulses.
Therefore,
laser
circuit
cation.
is used to control
in Fig.
time,
ReA
type
a functional
test
the S3701M
The S3701 M SCR is designed

and delay-time
in a simulated
for laser pulser
pulser
appli-
turn-off
time,
characteristics
for the good current-spreading

necessary
to provide
high-peak-
current
pulses
to drive the laser diode.
An additional
significant
characteristic
of this device is its well controlled
and
voltage do not correlate with circuit performance

in
pulser operating
with extremely
short, high-current
Formerly
current
is given in
Pulse Power
Lasers."
turn-on
for uniform
and efficient
holding current,
which assures operation
only
sufficiently
high to meet the circuit requirements,
at currents
40768.
CHARGING
MAXIMUM RATINGS,Absolute-Maximum
Values:
Case temperature
(T cl = 250C, unless otherwise specified
RESISTOOR_600V
DC
SUPPLY
~
Gate open
VDROM
RMS ON-STATE
angle = , 80) .
CURRENT
roo,,"
PULSE
CURRENT
IpM
75
= 5000 Hz
Infinite heat sink, f = 10,000 Hz.
I nfinite heat sink, f = 1,000 Hz.
Free-air cooling, f

PEAK IFor 10 ~s pulse)
Operating
V
A
.ITIRMS)
REPETITIVE PEAK ON-STATE

10.2 ~s Pulse Width):
Free-air cooling, f = 500 Hz
TEMPERATURE
Storage.
600
(Conduction
40
40
PGM
A
A
75
A
A
25
(Case)
'* NON -INDUCTIVE

ADJUST
RANGE:
TERMINAL TEMPERATURE lOuring soldering):

For 10 s max. (terminals
and case)
J
PULSE
Tstg
TC
TT
-40 to 125C
-40 to 100C
225
RESISTOR
RESISTANCE
WIDTH
AT
VALUE TO OBTAIN 020j.<s

% CURRENT
POINTS
50
At Maximum Ratings and at Indicated Case Temperature (Tel Unless Otherwise Specified
CHARACTER ISTIC
LIMITS
Max.
Min.
SYMBOL

Gate open, vD = VDROM, TC = 25C.
TC = 75C.
DC Gate-Trigger Current: TC = 25C
IDROM
DC Gate'frigger Voltage: TC = 25C

DC Holding Current:
Gate open, TC = 25C
Tr = 75C
Critical Rate-of-Rise of Off-State Voltage:
For vD = VDROM, exponential voltage rise, gate open, TC = 75C
Source Voltage for Functional Test (See Fig. 2):
Ip = 75A, C = O.022!J.F, Rs = 2n, f = 60Hz, pulse duration = 0.21J.S,TC = 25C
Thermal Resistance:
Junction-to-Case
Junction-to-Ambient.
UNITS
0.65
1.2
mA
IGT
35
mA
VGT
IHO
15
10
mA
dv/dt
200
V/!J.s
Vs
550
ROJC
ROJA
7
40
C/W
0-550 v
VARIABLE
DC
SUPPLY
INCHES
MIN.
MAX
MIN.
MAX.
0.250
0.340
0.034
0.620
0.500
0.210
6.35
0.711
8.64
0.863
15.75
'.,h
0.028
Pin 1 - Gate
Pin 2 - Cathode
Mounting
Flange,
Case - Anode
MILLIMETERS
SYMBOL
D,
0,470
e
e,
0.190
0.093
0.050
F
F,
L
0.107
0.075
0.050
0.360
0.142
0.958
'1
'2
0.145
0.570
4.83
2.36
1.27
12.70
5.33
2.72
1.91
1.27
9.14
0.152
0.962
0.350
"p
q
11.94
NOTES
0.590
3.61
3.86
24,33
24.43
14.48
8.89
3.68
14.99
NOTES:
1. The outline contour is optional within zone defined by
2. Dimension does not include seating flanges.
<p 0 and F,.
537025F
021015
537035F 021035
021035F
[KlCTI3LJ1]
Solid State
Division
Horizontial- Def lection

SeR's and Rectifiers
I
For 1100 Large-Screen Color TV
Ij
.JJ.
R
Features:
"*
Operation
Ability
to handle
high beam current;
Ability
to supply
as much as 7 mJ of stored
flection
from supply
voltages
yoke, which is sufficient
as well as 36.5 mm-neck

021015
021035
02103SF
between
tubes,
150 and 270 V (nominal).
average
1.6 mA de.
energy
for 29 mm-neck
both operated
to the depicture
tubes,
at 25 kV (nominal
value).
Highly reliable
circuit
which can also be used as a low-voltage
power supply.
These
ReA
circuit
such as that shown
The silicon
silicon
bipolar
types
are designed
controlled
rectifier
switch
for use in a horizontal
output
in Fig. 1.
rectifier
S3703SF
(408881*
and the
02103SF
(40890) * are designed to act as a
that controls
horizontal
yoke current during
the beam trace interval. To initiate trace-retrace

switching
and control yoke current during retrace, the silicon controlled
rectifier S3702SF
(40889)* and the silicon rectifier 02103S
(40891) * act as the commutating
switch.
The
silicon
rectifier
02101S
(40892)*
To facilitate
rectifier,
silicon
compared
direct
connection
S3702SF
across
and S3703SF,
rectifiers
021035
to that
and
of a normal
021035F
power-supply
TRANSFORMER
r---i
I
COM MUTATING
SWITCH
1--- --,
I
For a description
of the operation
of SeA deflection
systems
see ReA Application
Note AN-3780,
A New Horizontal
Deflection
System Using S3705M and S3706M Silicon Controlled
Rectifiers";
"An
SeA
Horizontal-Sawtooth-Current
Picture Tubes"; ST-3835, "Switching-Device
be used
each silicon
the anode
HIGH-VOLTAGE
ST3871;
Deflected
System"
may
as a
clamp to protect
the circuit components
from excessively
high transient
voltages which may be generated as a result of
arcing in the picture tube or in a high-voltage
rectifier tube.
and High-Voltage
Generator
for
Magnetically
Requirements for a New Horizontal-Deflection
controlled
connections
are
reversed
rectifier
of
as
diode.
RATINGS,
Absolure-Maximum
CONTROLLEO
RECTIFIERS
MAXIMUM
SILICON
Non-Repetitive
Peak Off-5tate
Values:
COMMUTATING
Voltage:
Gate open
..............................................
Repetitive Peak Off-State Voltage:
Gate open
........................................
Repetitive Peak Reverse Voltage:

Gate open .............................................
On-State Current:
T C = 60De, 50 Hz sine wave, conduction
angle
IT(RMSI
.
Peak (forward or reverse) for 10 /ls duration,

gate bias ~ -35 V .......................................
Temperature
Rangell:
25
against
transients
measurement
ELECTRICAL
SILICON
point
is shown
which
results
Transients
in a gate power
on the DIMENSIONAL
At Maximum
CHARACTERISTICS,
CONTROLLED
50
200
A/JlS
--40 to 150
--40 to BO
and gate voltage
A
A
25
above this value must be provided.
of gate current
max. reverse
Storage
..........................................
Operating
(easel
-remperature
700
3.2
IT(AV)
For one cycle of applied voltage, 50 Hz

Critical Rate of Rise of On-State Current:
For VD ~ VDROM rated value, IGT
50 mA, 0.1 JlS rise time .......
Gate Power Dissipatione:
product
180:
Average DC .......................................
RMS
.........................................
Peak Surge (Non-Repetitive):
Protection
750'
.............................................
T C ~ BOoC
-Any
SCR
S3702SF
generated
by arcing
may persist
c
c
for as long as 10 cycles.
is permitted.
OUTLINE.
Ratings and at Indicated Case Temperature IT CI
RECTIFIERS
LIMITS
SYMBOL
CHARACTERISTIC
S3703SF
TYP.
MAX.
S3702SF
TYP.
MAX.
UNITS
Peak Forward Off-State Current:

Gate open, VDO
TC = 85C
= Rated VDROM
. ..... ....
Instantaneous
0.5
1.5
0.5
1.5
mA
2.2
2.2
IGT
15
40
15
45
.. .................
VGT
1.8
1.8
........ .... . .......... . ....
dv/dt
700 (MIN.~
tq
On-State Voltage:
= 20 A
iT
100M
. . .. . . . . . . . . . . .
TC

TC = 25C
25C
. ... ... .. ... ...... . ..
.......
... .... .... .........
vT
mA
DC Gate Trigger Voltage:

TC
= 25C ..... ... ............
Critical Rate-of Rise of Off-State Voltage:

TC
70C
.....
Circuit-Commutated
Turn-Qff Timet:
TC = 70C, Minimum negative bias

during turn-off time = -20 V (S3703SFI
and -2.5 V (S3702SFI
Rate of Reapplied Voltage (dv/dt) = 175 Vips
Rate of Reapplied Voltage (dv/dtl = 400 Vips
Thermal Resistance:
Junction-to-Case .
V/jJ.s
700 (MIN.)'"
..... ....
..
..
....... .....................
.. ....
.... ..
R8JC
2.4
4,2
jJ.s
jJ.s
C/W
Up to 500 V max. See Fig. 3.
This parameter, the sum of reverse recovery time and gate recovery time, is measured from the zero crossing of current to the start of the
reapplied
voltage.
Knowledge
of the
current,
the
conditions
(high line, zero-beam,
off-frequency,
Turn-off time increases with temperature;
therefore,
'NOrst
reapplied
voltage,
and the case temperature
minimum auxiliary load, etc.) , turn-off

case temperature
must not exceed 70o
e.
is necessary when measuring tq. In the

time must not fall below the given values.
See Figs. 2 & 3.
CLAMP
D2101S
REVERSE VOLTAGE"":
Non-repetitive peak"
Repetitive peak .....................................
FORWARD
RMS
CURRENT:
TEMPERATURE
3--
70
7
1"
LEAD TEMPERATURE
F(ji;O s maximum.
70
30
12
0.5
Tstg
TC
TL
:
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
For ambient temperatures up to 4SoC.

For a maximum of 3 pulses, 10 J.ls in duration, during any 64 J.ls period.
Maximum current rating applies only if the rectifier is properly mounted to maintain junction
.. At distances no closer to rectifier body than points A and B on outline drawing.
ELECTRICAL
temperature
below 150C. See Fig. 4 .
MAXIMUM
LIMITS
CHARACTERISTICS
SILICON RECTIFIERS
CHARACTERISTIC
SYMBOL
D"103S
D2103SF
UNITS
D2101S
Reverse Current:
Static
For VRRM = max. rated value. IF = 0, T C = 25C .........
For VR - 500 V, T C = 100C ......................
10
250
vF
1.4
1.5
trr
0.5
0.7
JRM
J1A
Instantaneous Forward Voltage Drop:

At IF
V
V
RANGE:
Storage .........................................
Operating (Case) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3--
.................................
Peak-surge(non-repetitive)"
Peak (repetitive) ........................................
*.
700
800
4 A. T A = 75C
...............................
ReverseRecovery Time:
'FM = 3.14 A.}\ sinewave, -<li/dt = -10
pulse duration = 0.94 J1S, T C = 25C
A/J1s,
................
/1--r l
I
6A
:~n----
r---25~s----i
~2.4~s
I II
~ r-1q
+t!'
I I
II'
II
II
II
I
J1S
J/J
: :~~P~.j~D
I dv/dt
j..IO~S~t-
"I,I
175V/~s
REAPPLIED
dv/dt
.....
I
I
I,
400V/~s
I IREAPPLIED
: I: ',I't
lacv
MAX.
__
L I,
I
__
500V
MAX.
The SCA's and rectifiers can be operated at full current only

if they have adequate heat sinking. The procedure illustrated
in Fig. 4 should be used when mounting the SCA's. A single
aluminum
plate
made as shown
in Fig. 5 will
provide
adequate heat sinking for trace and commutating rectifiers.

Lip punching of the chassis at one end of the clamp plate,
makes it possible to mount the rectifier using only one screw.
S3702SF and S3703SF fit socket PTS-4 (United International
Dynamics
Corp.,
2029
Taft
St.,
Hollywood,
Fla.),
1.125
_.----('28,58)'----,j
or
equivalent.
.".,,"~ J.
s---
2 SCREWS,
NOT
.VAIL.
~r
632
ILEH.OMRC
0.312
(7.92)
ur
_-.1
~5~~;,------J
DF31A
MICA INSULATOR
SVPPLlEOWITHOEVICl
~cEHAAT~:~r
::...
2 METAL
2 LOCK
WASHERS
WASHERS
2 HEX,
2S0LDER
NUTS
4953347
2 NYLON
IN.5ULATING
BUSHINGS
1.0.0.156 In. {4.00 mml

SHOULDER
CIA.
0.250 In. (6.40 mml
K
SHOULDER
THICKNESS
0.050 Ifl. (1.27 mm) MAX.
@>
LUG~
2HEX.NUTS@
Fig.5-Suggested
rectifiers
In the United Kingdom, Europe, Middle East, and Africa. mountinghardware policies may differ; check the availability of all items
Fig.4-Suggested
sews
hardware and mounting
S3702SF and S3703SF.
arrangement
for
clamp plate and mounting

D2103S and D2103SF.
arrangement
for
DIMENSIONAL
OUTLINE
S3702SF,S3703SF
(JEDEC TO-66)
MilLIMETERS
INCHES
SYMBOL
MIN.
MAX.
MIN.
MAX.
0.340
0.034
O.62Q
0.500
0.210
0.101
0.Q75
0.050
6.35
0.111
8."
0.863
15.75
12.70
5.33
2.72
1.91
1.27
SEATING
0.250
0.028
~AHE
0_
00
00,
0.470
0.190
0.093
0.050
,
",
"
0.360
0.142
0.'"
4p
q
"
'2
0.570
11.94
4.83
2.36
1.27
9.1.
3.61
24.33
0.152
0.962
0.350"
0.145
0.590
TERMINAL
14.48
~~
3."
24.43
8.89
3."
14.99
CONNECTIONS
Pin 1 - Gate
Pin 2 - Cathode
Mounting
Flange, Case - Anode
DIMENSIONAL
OUTLINE (JEDEC DO-1)
D2101S, D2103S, D2103SF
POINT
LEAD NO. I
+b
POLARITY
SYMBOL
INDICATES
DIRECTION
OF FORWARD (EASY) CURRENT FLOW.
THIS POLARITY
IS OPPOSITE
TO ReA
POWER SUPPLY RECTIFIERS.
SYMBOL
b
INCHES
MilLIMETERS
MAX.
MIN.
MAX.
0.027
0.035
0.69
0.89
3.18
0.125
bl
D
0.360
0.400
9.14
10.16
Dl
0.245
0.280
6.22
7.11
D2
0.200
0.075
1.91
Gl
K
0.725
18.42
0.220
1.000
0
H
NOTES
MIN.
5.08
0.260
5.59
6.60
1.625
25.40
41.28
0.025
0.5
0.64
12.7
NOTES:
1. Dimension to allow for pinch or seal deformation
anywhere along tubulation
2. Diameter to be controlled
(optional).
from free end of lead to
within 0.188 inch (4.78 mm) from the point of

attachment
to the body. Within the 0.188 inch
(4.78 mm) dimension,
the diameter
may vary to
allow for lead finishes and irregularities.
Thyristors/ Rectifiers
[Jl(]5LJ[)
Solid State
Division
Power Integrated Circuits for Color and

Monochrome TV Horizontal Deflection
Application
Features:
Operation from supply voltages between 150 and 270 V (nominal)

Ability
to handle high beam current (average 1.6 mA de)
Ability
to supply as much as 7 mJ of stored energy to the deflection
yoke, which is sufficient for 29-mm-neck picture tubes and 35-mm-neck

picture tubes operated at 25 kV (nominal value)
Highly reliable circuit that can also be used as a low-voltage
power suppiy
The 53800 series are. all-diffused
that incorporate
power integrated circuits
a silicon controlled
rectifier
and a silicon
rectifier on a common pellet. 538005F (41017)", 53800MF

(41018)", and 53800E (41019)" are used as bipolar switches
to control horizontal yoke current during the beam trace

interval; 538005 (41020)", 53800M (41021)", 53800EF
(41022)",
and 53800D (41023)"
are used as commutating
switches to initiate trace-retrace switching.
HIGH-VOLTAGE
TRANSFORMER
r-----,
I
TO
PICTURE
TUBE
For a description
of the operation
of SeR deflection
systems, see ReA Application
Note AN-3780,
"A New Horizontal
Deflection
System Using S3705M and S3706M Silicon Controlled
Rectifiers";
ST-3871,
"An
seR Horizontal-Sawtooth-Current
and High-Voltage
Generator
for Magnetically
Deflected Picture Tubes";

Deflection System",
ST-3835,
"Switching-Device
Requirements
for
a New Horizontal-
53800 Series
MAXIMUM
File No, 639
Absolute-Maximum
RATINGS,
...
...
:;
0
...w
III
!:l
III
550'
650
!:l
:;
8
III
800'
700'
750
Values:
Peak Off-5tate
en
en
0
0
en
en
en
750'
650'
600'
500'
500
700
600
550
400
3.2
3.2
3.2
3.2
3.2
3.2
3.2
ITSM
50
50
50
50
50
50
50
di/dt
200
200
200
200
200
200
200
A/~s
PGM
25
25
25
25
25
25
25
Tstg
-40
to 150
TC
-40
to 80
en
Non-Repetitive
0
0
en
!:l
8
!:l
Voltage:
VDSOM
Gate open
Repetitive Peak Off5tate Voltage:
VDROM
Gate open
T C = 80C
Repetitive
Peak Reverse Voltage:

VRROM
Gate open
On-State
Current:
6Qoe, 50 Hz sine wave, conduction angle
TC =
'=
180:
Average DC
ITIAV)
RMS
ITIRMS)

Critical Rate of Rise of onState Current:
For V
= VOROM rated value, IGT = 50 mA. 0.1 1J.Srise time
Gate Power Dissipation:

Peak (forward or reverse) for 10,us duration;
bias = -35
max. reverse gate
V for S3800SF, MF, E; -8 V for S3800S, M, EF, D
Temperature
Range-:
Storage
Operating
(case)
Protection
against
-Temperature
.
transients
measurement
ELECTRICAL
above
point
this value
is shown
must be provided.
Off-State
open,
VDO
SCR,
TC
TC
Critical
TC
0.5
2.2
1.5
mA
VT
2.2
1.6
1.6
IGT
15
40
15
45
mA
VGT
1.8
1.8
Trigger
3 A
Trigger
Voltage:
= 25C
Rate
Current:
of Rise of Off-State
Voltage'
= 70C
8501MIN.I
dv/dt
Turn-Off
850IMIN.)
V/~s
Time t:
= 70C
negative
Minimum
Thermal
bias during
voltage
negative
rate of reapplied
bias during
voltage
turn-off
(dv/dt)
175
turn-off
(dv/dtl
time
= -20
V/JIs
time
= ~2.5 V,
V,
= 400 V/JIs ,
2.4
'q
4.2
~s
Resistance:
Junction-to-Case
parameter,
reapplied
worst
1.5
= 25C
VF
rate of reapplied
This
UNITS
IF
Minimum
for as long as 10 cycles.
IT = 30 A
Circuit.Commutated
TC
TC
Voltage:
= 25C
DC Gate
persist
IDOM
VDROM
0.5
On-State
Rectifier,
DC Gate
may
Current:
Rated
TC =850C
I nstantaneous
by arcing
LIMITS
S38005 F, S3800M F S3800S, S3800M,
S3800E
S3800EF, S38000
TYP.
MAX.
TYP.
MAX.
SYMBOL
CHARACTERISTIC
Gate
generated
OUTLINE.
At Maximum Ratings and at Indicated Case Temperature (T c!
CHARACTERISTICS,
Peak Forward
Transients
on the DIMENSIONAL
the sum of reverse recovery
voltage.
conditions
Turn-off
time
OJC
Knowledge
(high
increases
with
time
of the current,
line, zero-beam,
temperature;
and gate recovery
the reapplied
off-frequency,
therefore,
voltage,
minimum
time,
is measured
from
the zero crossing
and the case temperature
auxiliary
case temperature
load,
must
etc.),
turn-off
not exceed
700C.
is necessary
time
C/W
of current
when
to the start
measuring
must not fall below
tq.
of the
In the
the given values.
[~ ..
:,..
-r
I
600v
2 SCREWS.
6-32
NOT VA'lAaUFROMRCA
if!7=
OFJ1A
MICA INSULATOR
SUPl'LIEDw,lHOEV'CE
~E::,1:~"
2 METAL
WASHERS
495334.7
2 NYLON
INSULATING
BUSHINGS
I.O."0.156on.14.0011'l11'l1
SHOULDER
OIA.
0.250 ,n, 1640mml

SHOULDER
THICKNESS
'"
0.050 In 11.27 mil'll MAX.
2 LOCK WASHERS@
2HEX.NUTS@
~,
...
,,,,,,
fROMRCA
2SOLDEALUG~
2HEX.NUTS@
In the United Kingdom, Europe, Middle East, and Africa, mountinghardware

policies
shown with your
may
ReA
differ;
check the availability
sales representative
or supplier.
of
all
items
.,
,I
!:.~T
j
"
"
SEATING
~A"E
REFERENCE
POINT
TEMPERA
TURE
MEASURE
MENT
INCHES
SYMBOL
A
Ob
00
O,
,
"
'I
MIN
0.250
0.028
0.470
0.190
0.093
0.050
0.360
0.142
0.958
",
0.570
L
Op
'2
MILLIMETERS
MAX.
0.340
0.034
0.620
0.500
0.210
0.107
0.075
0.050
0.152
0.962
0,350
0.145
0.590
TERMINAL
MIN
6.35
0.711
11.94
4.83
2.36
1,27
9.14
3.61
24.33
14.48
3.86
24.43
8.89
3.68
14.99
CONNECTIONS
Pin 1 . Gate
Pin 2 . Cathode
Mounting
MAX
8.64
0.863
15.75
12.70
5.33
2,72
1.91
1.27
F lange, Case - Anode
NOTES
2
1
FOR
CASE
RCA 2N3668*,
2:":3669*,
2;\3670*,
and 2N4103* are
all-diffused,
three-junction,
silicon
(SCR'sA).
They are intended
for use in power-control
and
power-switching
applications
requiring
a blocking
voltage
capability
of up to 600 volts and a forward-current
capability of 12.5 amperes
(rms value) or 8 amperes
(average
value) at a case temperature
of 800C.
pJ
ReA
The 2N3668 is designed

for low-voltage
power supplies,
the 2N3669 for direct
operation
from 120-volt
line
supplies,
the 2N3670 for direct
operation
from 240-volt
line supplies,
and the 2N4103
for high-voltage
power
supplies .
Formerly
Dev. Typcs
TA2775, respectively .
. The
silicon
verse-blocking
TA2621,
controlJed-rectifier
TA2598,
is
also
Direct-soldered
internal
construction
ceptional
resistance
to fatigue
Symmetrical
form
current
efficient
heat
known
as
and
a
re-
triode thyristor.
All-diffused
construction
-assures
formity ond stobility
af characteristics
TA2618,
gate.cathode
density,
dissipation
rapid
exceptional
uni
- assures
ex-
construction
- provides
uni-
electrical
conduction,
and
2N3668
For Low-Voltage
Power
Supplies
2N3669
For 120-Volt
Line
Operation
2N3670
For 240- Volt

Line
Operation
2N4103
For High-Voltage
Power
Suppl ies
Absolute.Maximum
at a Frequency
Ratings,
for Operation
50
between
with
RATINGS
Peak Reverse Voltage (Repetitive),
Resistive
AC
Supply
2N3669
Voltage
or Inductive
CONTROLLEDRECTIFIER
2N3668
Tlansient Peak Reverse Voltage

(Non-Repetitive), vRM(non-,epj3
Sinusoidal
and 400 Hz, and with
Load
TYPES
UNITS
2N3670
2N4103
. . . . . . . . . . ...
150
100
330
100
660
400
700
600
volts
.,. . . . . . . . . . . .
600
600
600
700
volls
8
11.5
8
11.5
8
11.5
8
11.5
amperes
amperes
100
See Fig. 10
100
See Fig. 10
100
See Fig. 10
amperes
.....
vRM(rep)q.
....
volls
Peak forw31d Blockmg Voltage
(Repelibvel, vFBOM(rep)C.
.......
Forward Current:
For case tempelature (T C) of +800 C
Average DC valueata conduction angle of 1800, IFAY<!. ......
RMSvalue, IFRMSe.
For other conditions, see Fig. 8
Peak Surge Current, iFM(surgd:
For one cycle of applied voltage ................
For more than one cycle of applied voltage. .........
.....
......
SubCycle Surge (NonRepelllive), 111&

For a period of lms to 8.3ms . . . . . . . . . . . . . . . . . . . . . . .
Rate of Change of Forward Current, di 'dth.
100
See Fig.
10
ampere2
second
amperes
microsecond
165
165
165
165
...
100
100
100
100
. . . . . . . ..
4U
40
40
40
watts
0.5
0.5
0.5
0.5
watt
-4010 >115
-4010 >100
C
C
....
.....
YFB ~ vBOO(mtn. valuel

IGT ~ 100mA, 0.5 J.' S rise lime
(See waveshapes of Fig.
1)
Gate Power:
Peak, Forward
Of
Reverse, for lO,us duration,
PGMi
(See Figs. 5 and EI

AVeiage, PGAyk. . . . . . . . . . . . . . . . . . . . . .
...
Terr.perature:
Storage, Tstge.
.........
... . . . . . . . . . ... ... .. .. , ..
Opelaling (Case), TC.
1---------
0-
-4010 >115
-4010.100
-4010.115
-4010100
4010.115
-4010.100
CRITICAL
d,/dl
*"0.63
f" RC
VfB
CHARACTERISTICS
CONTROLLED.RECTIFIER
2N3668
2N3669
TYPES
UNITS
2N3670
2N4103
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
100
200
400
600
volts
0.1
0.15
1.5
0.3
0.35
m1.
0.05
0.1
1.15
0.1
1.5
0.3
m1.
1.5
1.8
1.5
1.8
1.5
1.8
1.5
1.8
volts
10
40
10
40
10
40
10
40
1.5
l.5
1.5
1.5
0.5
15
50
0.5
15
50
0.5
15
50
0.5
15
50
m1.
10
100
10
100
10
100
10
100
volts!
Forward Breakover Voltage, "800m
1.tTC'
.IOOOC .....................
100C:
Peak Blocking Cunent, at T C ::

Forwafd, IFBDM" .
VFBOP 'BOO(m". value)

Reverse, (RBOM'.
VRBOP
vRM(lep)
value
Forward Voltage OIOP,VFr

At a Forward Current of 25 amperes and
.150e (See Fig. 11).. . . . . . . . . . . . .
aTe'
DC Gale- Trigger Current, IGTs:
.150e(SeeF,g.5l.
1.tTe'
.......
GaleTngge, Voltage, VG{

At Te' .150e (See Fig. 5l. .
...........
m1.(de)
volts (de)
Holding Current, IHOOu:
At Te'
Critical
.150e.
Rate of Applied Forward Voltage,
Critical dv dlv.
VFS::
Te'
vBoo(mm.value), exponential
Te
microsecond
dOOOe
(See waveshape of Fig. 2)

Turn-On Time, lonw, (Delay Time + RIse Time) .
VFB
IGT'"
rise,
0.75
1.15
0.75
1.15
10
50
10
0.75
1.15
0.75
1.15
microseconds
50
10
50
10
50
microseconds
17
17
17
0e 'W
vBOO(mln. value), IF = 8 amperes,

200mA, 0.1 uS Ilse lIme,
.150e
tSee waveshapes of Fig. 3)

TurnOff TIme, toffl, (Revelse Recovery TIme
+Gate Recovery Time).
IF'"
8amperes, 50" s pulse width,
d'FBdl'
10, "s,
d', dt 30 A .. s, IGT 100m1.,
Te'800e
I See waveshapesof FIg. 4)
Thermal ReSistance, Junction-to-Case.
171
dVrs/dt
~/
I
dir Idt
~\
iF
I
I
\ I
I
I
_:l __
____
vRB
:-----i
I
I
I
I
I
-+-----------0
,
I
I
I
I
tqr ----+1
I'
I
I
I
k----- t off ------.;
1
The
used
construction
in
center
gate.
emitter
both
these
of
devices
These
and
re,erse
These
gate
limits
in
peak
the
u!?cd
sients
total
to
be
or rc\'crse
employ
shorted-
restrictions
voltal(e
are
adhered
The
sholln
limitations
gale
pulses
~ale diss\?ation,
\"crse, should not exceed

rating
peripherv
and
sholln
to
on
peak
products
in Fig.
IIhen
5.
designing
for maximum trigger pulse widths
direction
determine
a\'era~e
,,"idths
dissipation.
re,"erse
I(ate
junction
large
\'alues of \'olt-ampere
should
pOller
also
peak
pulse
pulse trigger circuits

and
which removes
gate current. Limiting

for different
gate-cathode
devices
construction
forward
the
pro, ides
(PG.-\ \") of 0.5 lIatt.
,olt-ampere
in
for
if
products
Fig.
6" should
reverse
gate
present.
both
the average
be
tran-
In all cases,
forward
and
re-
gate dissipation
Turn-on times for different

in Fig.
7. These
required
widlh
curves
of the
necessary
to maintain
magnitude
of the
the
latching
design
requires
gale
the
forward
current
that
gate currents are shown
ma)' be used
trigger
gate
the
trigger
anode
value.
gate
to determine
_pulses.
pulse
current
Ho\\ever,
greater
than
to or somewhat
turn-on
time.
Some applications
the
reached
conservative
pulse
equal
until
has
trigger
at least
the
It is onlv
may
width
be
the device
require
wider
"'z
0
~
0
52
'"I
'"
'"
>=
Z
gate
pulse
widths
for proper
circuit
operation.
I
Z
'"::>...
.--D
o
L,-..J180
CQKlUCTION
ANGLE
~
:::.
.- ....
::::
AVERAGE
FORWARD
7
CURRENT
10
II
12
13
{IFAVl-AMPERES
92CM-I3808
14
SUPPLY FREQUENCY,,60
H7 SINE WAVE
CASE TEMPERATURE"aOo
c
lOAD:RESISTIVE
REPETITIVE
PEAK REVERSE
VOLTAGE ~RM(reP~:MAXIMUM-RATEO
AVERAGE
FORWARD
CURRENT
(IFAV):MAXIMUM-RATEO
CASE TEMPERATURE
VALUE
160
'"~
'"
'" ~
fi'
V>
'"
:>
z'"
",,,,
~ ltl20
"
i"-
"-
z
'" I
co"
'"
'"~
80
"
........
'"
40
l:'
60
=]'1
..
NATURAL COOLING
SINGLE - PHASE OPERATION
CONDUCTION ANGLE. 1800
CONTROlLED -RECTIFIER
USING HEAT-SINK
COMPOUND
HEAT SlNKl 1/16~!.. THICK COPPER WITH A MAT - BLACK
SURFACE AND THERMAL EMISSIVITY
OF 0.9
---'-'
--- tc:"
.
--
'r
..
..
..
~--
"
"-0'
..
II
'1
,.
Y /
V ./
-- . +
..
::.:
"
I
1
...
>-
ll!
'5
u
Q
a:
~
"'"'"
ei
il
"
"~
"
co
~
~
1
...
>-
a:
i3
IE
'"
il
";;
"
"
:>
,
" ,.. :
-q"'-'
..
--
I,E
.-...
FORCEDAIR COOLING'
AIR VELOCITY" 1000 FEET PER MINUTE PARALLEL
PLANE Of HEAT SINK
SINGLE - PHASE OPERATION
~:~~~~ltiD ~~T~;I~~O~S'NGHEAT-SINK
.--
'--
COMPOUND*
HEAT SINK' 1/16" - THICK COPPER WITH A MAT-BLACK

SURFACE AND THERMAL EMISSIVITY OF 0.9
..
....
"
"
..~.. -~. ':::!1

--
.......-t.:
~::::- -,
, -, -._. 'j~
. ..'-!=; -- ::-n
,
.._.
:-;.1
,it
i.=
..
.. -r: ~~J
.-- .._
.
_.-.
~f;
, : , : _ .. . _._. J
3 '-'- =:ff
, ---- us:
..
.. -..
..
..
f
,
::::
: :-:::=
.- J ....
. ...
:'"
.~...
>-
;;
..
(T )=25
...C_--
: :
~~ 40 ..
~'"'":> 20
-.........
, ,
--
_ ... -.- ._ .. ...

80
..
Q.
V>
>-V>
",I
--
2001\.
-100
VALUE
- 2: --... -~FEE=
I~
TO
--
---..
---
:-w
.. : :
.. ..
--..
::
..
: ..
:'2
3~ :-::1"1
w---
2 SCREWS
632
NOT"'V"'ILA~LEFAOMRC'"
t~it
:~~----~
.450
.250
1-
.312 MIN.
:~~'"W,
SEATING
PLANE
L.
135 "AX .
~:~~:~'~NSULAT1NG
2 METAL
WASHERS
, LO::~::HUE::~
2S0LDEA
~~S~l~.~~
1640
(4.00 mml
mm) MAX.,
SHOULDER
0.050 In,
Sl.PI'llEOWlTH
in.
SHQULDERDIA.-O.2SOm,
NOT
AIIA'LA,6lE
THICKNESS
11.21 mm) MAX.
DEVle"
FRO'"
ReA
LUGS~
2HEX.NUTS@
In the United Kingdom. Europe. Middle East, and Afnca, mountinghardware policies may differ; check the availability of all items
NOTE:
URED
THESE
DIMENSIONS
AT POINTS
.050 TO
SHOULD
BE MEAS.055 BELOW
SEATING
PLANE.
WHEN
GAUGE
IS NOT
USED,
MEASUREMENT WILL
BE MADE AT SEATING
PLANE.
f-DJ
o-1NIPINIP
<5
CATHODE
TERMINAL
ANODE
TERMINAL
(CASEl
I
GATE
TERMINAL
PIN
1:
GATE
PIN
2:
CATHODE
CASE:
ANODE
Solid State
Division
5620056210 56220
5eries
20-Ampere Silicon
Controlled Rectifiers
PRESSFIT
S6200
Series
CATHODE
\
....-GATE
For Low-Voltage Operation - 56200A (40749)*, 56210A (40753)*,

56220A (40757)*
For 120-V Line Operation - 56200B (40750)*, 56210B (40754)*,
56220B (40758)*
For 240-V Line Operation - 562000 (40751)*,562100
(40755)*,
562200 (40759)*
For High-Voltage Operation - 56200M (40752)*, 56210M (40756)*,
56220M (40760)*
STUD
S6210
Series
ISOLATEDSTUD
S6220
Series
These RCA types are alldiffused, silicon controlled
Features:
rectifiers
Low switching losses

High di/dt and dv/dt capabilities
Shortedemitter gate-cathode
construction
Forward and reverse gate dissipation
ratings
All-diffused construction-assures
exceptional uniformity and stability
of characteristics
(reverseblocking
triode
thyristors)
designed for power
switching and voltage regulator applications and for heating,
lighting and motor speedcontrol circuits,
These SCRs have an RMS on-state current rating (IT [RMS])
of 20 A and have voltage ratings (VDROM) of 100, 200, 400,
and 600 volts,
MAXIMUM RATINGS, Absolulc-,\Iaximum
(; 1t' Opt'n
600
\'IJSml
150
250
500
700
\'RRml
100
310
400
600
\'IJRO\l
Ino
200
400
tilll)
PEAK FORWARD\,Ol-T,\(;r:
.............
Pr;AK OFF-ST,\TE \"OI.T,\(;I,;
()pt'n ...........
I'I;AK Sl'R(;r; I~O~'REI'ETITI\'EI

O~-STATE ("('RRE~T:
For ont' ('yc-lt, of lIpp!Il'rl
pnncipal
VOltilJW
50-II z. sinusoidal
.
tW-1I /.. sinusoidal
.........................
For mort.' than ont' full (".\It.'lt, of ilppll('d prinCipal \-oltagl' ...
,
0N-STATF. CURRENT:
For l'a~l' ll'mpNutuTl' (TC) = 75 C. conductiun an~l(' of I~)n
A\l'nl~f'
DC \"alul' . . . . ..
......
, .
,.
R\1S
56200D
56210D
56220D
400
56200M
56210M
56220M
\'RSO\I
56200B
56210B
56220B
200
I'r:AK REn:RSE VOI-TAC;,:
RU'ETITI\'E
{:i1I('
56200A
56210A
56220A
100
\'olups:
..............................
RI,:PETITln:
t;att' ()Pt>"
Symmetrical gate-cathode
construction-provides
uniform
current density. rapid electrical
conduction, and efficient heat
dissipation
Low leakage currents, both forward
and reverse
Low forward voltage drop at high
current levels
~O~-RF:PF:TITI\'F: PEAK Rr:\'r:RSE \"()LT,\(;E

Gatt Open ................................
~O"-Rr:PETITI\'E
\""JUl'
,.,
IT""
170
200
See
Fig.
A
A
10
1'f(R\ISI
12.5
20------
dtidt
200
A/P.8
P (I\V)
40
0,5
I'J{(;M
Set' FiR. 5
11'(,\\"1
A
A
RATE-IW-C'!IANC;EOF ON'STATE CURRENT:

\ 0\1 =
v(
B010,IGT
= 200 mA, tr
n.!)
(;ATE POWER DISSIP/\TION:

PEAK f'!)RWARD <ror 10 p.;-. nUlx.l ,
AVERA(;E
(a\'erll~ln~
tlm<' - 10 ms,
PEAK REVER'-;E . , ...
, . , . . . .
p.s
(S('l'
Fi,i{. 2.) .....
....
milx.)
, . ,
PGM
, .
. , , ..
, ...
TEMPERA1TRE IL\NI;F::
Stora~('
()p<'ratlnR
Soldl'nnR
, ,
, .
(Cast') ...
(10 s max. for tenninalsl
,
,
, , . , , ,
, ,
, , ...
, ....
"
'
-05 Lo \50
-65 to 100
C
C
225
11-73
ELECTRICAL
CHARACTERISTICS
and at Indicated
At Maximum Ratings
Case Temperature
(T C) Unless
Otherwise
LIMITS - ALL TYPES
SYMBOL
CHARACTERISTIC
Specified
Typ.
Min.
Max.
UNITS
Inslantaneous Forward Breakover Voltage'

IGate open. T C = 100 oc)
...
56200A, 5621 OA, 56220A .
56200B, 5621 OB, 562208

562000,562100,562200
56200M, 56210M, 56220M
..
.. ..
..
....
..
.....
...
.... ...
.. ..
..
vI Bo)O
100
200
400
600
Peak offState Current

IGate open, T C = 100 C'
Forward, VOO = VOROM .
..
Reverse. VRo = VRROM ...
... .
Instantaneous On'Stale Voltage'

For 'T=IOOA. TC=250C
..........
...
.....
..................
...
100M
0.2
IRROM
vT
1.9
mA
2.4
V
mA
DC Gate Trrgger Current

Vo = 12V IOC). RL =30n. T C = 25C ..
At oilIer case temperatures . ..........
....
..... . ....
....
..... ...
. ...
. ....
..
8
See Fig. II
15
IGT
VGT
I l.l I
See Fig. 12
'Ho
DC Gale Trrgger Voltage'
........ .. . .......
Vo = 12VIOCI. RL =30\;. TC = 25C

At other case temperatures. .......
Instantaneous
Holding
....
. ......
Curren!"
Gate open. T C = 25 C ... .......

At other case temperatures .
.. - . ... ..... ....
...
..... ....
9
I
See Fig. 15
20
100
ISO
75
mA
Crrtical RateofRise of OrtState Voltage:

(VOO = VIBO)O Min. value, Exponential rise, TC 100C, See Fig 5)
56200A, 562000, 56210A,
56200B, 562108, 562208
562100,
56200M, 56210M, 56220M
56220A,
562200 ..
.....
dv dl
10
10
10
...........
Gate Controlled TurnOn Trme:

Vo = VIBO)O Min. value, iT ~ 30A, IGT -200mA, 0.1 "s rise time, TC 250C
See Fig. 9
CirCUit Commulated TurnOff Time'
Vo = VFIBOlO Min. value, iT = 18A, Pulse ouralion
50 "s,
dv/dt = 20 V II'S, di/dt = -30 All'S, T C = 75C
See Fig. 4
Thermdl ReSistance:
Junction-la-Case ... ..... ........ ......................
JunctlOntolsolated Stud . . . . . . . . . ........ .... ..........
V;;.s
tgt
liS
tq
20
40
liS
ROJC
ROJtS
1.2
1.4
0C 'W
~
J----------------,
/..--di/dl
I"~
I I
VRSO"'~
~VRROM
0---
~L~M
I_~
r--'I
~.O.63+
t Rt
'T.
I SO"
IRM
}';j',
VSO"T.-\! ,
--111,I 'ox
I
--j
1
__ I
r-'"
f--t-- '. ---j

I
~'T
\t-
Fig.
~_'_DX
:(',
,
I
'I
4-Relationship
between on-state current, reverse current, onstate VOltage, and off-state voltage showing reference points
for definition of turn~ff time (tg).
;Q~
;Qe~

LOAD RESISTIVE OR INDUCTIVE
l5
CONDUCTION
ANGLE
CONDUCTION
ANGlE
30
~,DC OPERATION
.
g
....
~
90
2S
t~~ r"
(().IDUCTIQN
z
20
~
;::
~
~
..~
.. "
~
~
"~
~
._-
'+'1
90'
is
w
0
-t
w
>
10
'2\)<>'
-'IY- .
""
....
rl-.~: .,
..
-< -
.,
ii::
,'"
-:i-::- wi
85
""
80
.
w
-;n
30'
~--<
~,
~
~
..~
~
~
~
~
~
~
'"~
~
~
~
~
w
... ,:i
. ... ....
~
I' .... . . ~
-.:t.:..; :-r:: -~-~ -:r
/: .. _ ..
....
.. ..
~l:
':1
t
j~~
.:/~ ~.
'~j
t-
"'"
ANGLE '" 1800
75
AVERAGE ONSTATE (URRENT
IT(AV)
-A
'1'-'
7-Maximum
allowable case temperature vs. average forward
current for stud and press-fit.
Q8if
CONDUCTION
ANGLE
..
80
~
'"
S'"
75
..
CASE TEMPERATURE"
LOAO :: RESISTIVE
g
....
REPETlTIVE
AVERAGE
PEAK
60C
REVERSE
ON-STATE
vOL
CURRENT
TAGE
(IrIAV))
[~RRO/l\] "
MAXIMUM
'" MAXIMUM
RATED
RATED
VALUE
VALUE
400
'"'"u~
..
w
"...
300
~
~
w
'"
~
"'"~
~
..
~
100~
100
J'H'
",':: -....::::: ......
-40
CASE
-20
TEMPERATURE
20
40
60
(TC )_C
9255-4465
Mounting of press- fit package types depends

upon an interference fit between the thyristor case and
the heat sink. As the thyri stor is forced into the heatsink hole, metal from the heat sink flows into the knurl
voids of the thyristor case. The resulting close contact
between the heat sink and the thyri stor case assures low
thermal and electrical resistances.
shows press-fit knurl and heat-sink hole dimensions.
If these dimensions are maintained, a "worst-case"
condition of 0.0085 in. (Q.21.~9 mm) interference fit will
allow press-fit insertion below the maximum allowable
insertion force of 800 pounds. A slight chamfer in the
heat-sink hole will help center and guide the press-fit
package properly into the heat sink. The insertion tool
should be a hollow shaft having an inner diameter of
0.380 0.010 in. (9.65 0.254 mm) and an outer diameter of 0.500 in. 02.70 mm). These dimensions
provide
sufficient clearance for the leads and assure that no
direct force is applied to the glass seal of the thyristor.
The press-fit package is not restricted to a single

mounting arrangement; direct soldering and the use of
epoxy adhesives have been successfully employed. The
press-fit case is tin-plated to facilitate direct soldering
to the heat sink. A f)0-40 solder should be used and
heat should be applied only long enough to allow the
sold,'r to now freely.

2 AVERAGE (OC) GATE POWER
DISSIPATION AT RATED
OJ
CON ITIONS.
4
POSITIVE
80.1
GATE-lO-CATHODE
8 I
TRIGGER
CURRENT
810
(lGT)-A
9255-4466
---'--
~~g~~-:b)l
OIA.
900
L8
-~I-60
-40
CASE
-20
TEMPERATURE
20
40
60
ITCI-oC
9255-4467
Fig. 15-DC holding current vs. case temperature.
NOTE: Dimensions in parentheses are in

millimeters
and are derived from the basic
inch dimensions as indicated.
MAX.
Package
Type of Mounting
Thermal
Employed
Resistance-OClW
Press-fitted
into heat sink.
(Minimum
Required
thickness
of heat sink = liB in.
Press-Fit
Stud
In the United Kingdom, Europe, Middle East, and Africa, mountinghardware polIcies may differ; check the availability of all items
shown with your ReA sates representative or supplier.
0_5
SOldered directly to heat sink_

(60-40 solder which has a melting point of 1880 C should be
used.
Heatmg
time should
be sufficient to cause solder
to flow freely).
0.1 to 0.35
Directly
mounted on heat sink
with or without the use of heat
sink compound.
0.6

mica
0.004 to 0.006 in. thick
beinsulating
washer used
tween unit and heat sink.
2.5
1.5
REFERENCE
POINT FOR CA.SE
TEMPERATURE
MEASUREMENT
INCHES
SYMBOL
MIN.
A
,,0
,,0,
,,0,
J
M
501
.465
"T
lOT,
.058
.080
NOTE
MAX.
.380
.510
.505
.475
.750
.155
.068
.090
MilLIMETERS
MIN.
12.73
11.81
965
12.95
12.83
12.07
19.05
3.94
1.73
1.47
of these terminals
optional.
NOTE 2: Outer diameter of knurled surface.
INCHES
SYMBOL
A
,,0,
E
F
J
M
N
2.29
2.03
1: Contouf and angular orientation
NOTES
MAX.
is
"T
"T,
",W
MIN.
,330
544
113
.422
,058
.080
,2225
MAX.
,505
.544
.562
,200
.950
.15S
,453
.068
.090
.2268
MIlliMETERS
MIN.
8,4
13,82
2,87
10.72
1.47
2.03
5.652
MAX,
12,8
13,81
14,28
5.08
24.13
3.94
11.50
1.73
2.29
5,760
NOTES
NOTE 1: Contou; and angular orientation of these terminals

is optional.
NOTE 2: f>itch diameter of \4-28 UNF-2A (coated) threads

(ASA Bl. 1-1960).
NOTE 3: A chamfer or undercut on one or both ends of hexagonal
Terminal No. 1- Gate

Terminal No.2 - Cathode
Case, Tenninal No.3 - Anode
SYMBOL
.673
17.09
.614
IS.34
15.59
</>01
.501
.505
12.72
12.82
.551
.557
13.99
14.14
.175
.185
1.055
4.44
4.69
26.79
Ml
.200
.210
.422
.452
.155
2.03
</>T2
</>W
.138
.148
.2268
3.50
3.75
.2225
5.652
5.760
be handled
with care.
ceramic portion
of these thyristors
contains
BERYL
L1UM OXIDE as a major ingredient. Do not crush, grind, or
portions
of
from such action
the
2
3
.090
The
these
2
2
.068
.080
NOTE 3: Pitch diameter of ',6-28 UNF-2A (coated) threads

(ASA Bl. 1-1960),
resulting
1.73
2.29
.058
</>Tl
beryl I ium oxi de.
abrade
5.33
11.48
</>T
NOTE 2: Contour and angu lar orientation of these terminals

is optional.
The 56220 series should
3.94
5.08
10.72
1.47
SEATING PLANE
"WARNING:
thyristors
may be hazardous
Terminal No. 1- Gate

Terminal No.2 - Cathode
Terminal No.3 - Anode
because
the
if inhaled."
dust
NOTES
MAX.
-l
MIN.
.604
mS-Ull
MAX.
A
</>0
REFERENCE!
POINT FOR CASE
TEMPERATURE
MEASUREMENT
MILLIMETERS
INCHES
MIN.
File No. 578
Thyristors
2N3870-2N3873,S6400N
2N3896-2N3899,S6410N
S6420A,B,D,M ,N
DDJ]3LJ[J
Solid State
Division
Press-Fit, Stud, and Isolated-Stud Packages

For Low-Voltage Operation-2N3870,
2N 3896, S6420A (40680) t
For 120-V Line Operation-2N3871,
2N3897, S64208 (40681)t
For 240-V Line Operation-2N3872,
2N3898, S6420D (40682) t
For High-Voltage Operation-2N3873,
2N3899, S6420M (40683)t,
S6400N (40937)t, S6401N (40938)t,S6420N
(40952)t
Features:
2N3870
2N3871
2N3872
2N3873
S64QON
2N3896
S6420A
2N3891
2N3898
2N3899
S641QN
56420B
ReA types
These
(reverse-blocking
564200
S6420M
S6420N
High di/dt
Low on-stat.

Shorted-emitter
gate-cathode
construction
... contains an internally diffused
voltage
resistor between
silicon controlled
rectifiers
are all-diffused,
triode thyristors)
designed

'NON-REPETITIVE
Gate Open.
and dv/dt
capabilities
at high current
gate construction
spreading
faster turnon
with substantially
heati ng effects
and motor
2N3870
2N3896
S6420A
2N3871
2N3897
S6420B
2N3872
2N3898
S6420D
150
330
660
700
900
150
330
660
700
900
100
200
400
600
800
100
200
400
600
800
Values:
and
voltage
regulator
applications
speedcontrol
circuits.
2N3873
2N3899
S6420M
S6400N
S6410N
S6420N
PEAK REVERSE VOLTAGE.

.
angle
'=
180":
--------35-----22-----See Figs. 3 & 5

cycle
of applied
ON-STATE CURRENT,
principal
voltage
60 Hz (sinusoidal)
350
50 Hz (sinusoidal)
For more than one full
300
cycle of applied
principal
See Fig. 5
voltage
RATE OF CHANGE OF ON-STATE CURRENT

VD: VOROM' IGT = 200 mA,', = 0_5~s (See Fi9_ 13)
FUSING CURRENT (for SeR protection):
TJ =
to 100C, t = 1 to 8.3 ms
-to
GATE POWER DISSIPATION,

Peak Forward (for 10 ~s max., See Fig. 8)
Peak Reverse
.
Average (averagingtime = 10 ms max.l
...........
'TEMPERATURE RANGE",
Storage
Operating (Case) ..............................
40
See Fig. 9
0.5------
.............
TERMINAL TEMPERATURE (During sotdering):

For 10 s max. herminals and casel
--------------
-----
-40 to 125 -----40 to 100 -------
TT
--------
* In accordance with JEDEC registration data filed for the JEDEC (2N-series) types.
These values do not apply if there is a positive gate signal. Gate must be open or negatively biased.
T C 600 for isolated-stud package types.
Any product of gate current and gate voltage which results in a gate power less than the maximum is permitted.
Temperature measurement point is shown on the DIMENSIONAL OUTLINE.
225
for
reduced
control,
RMS
Average
provides
gatecurrent
lighting,
ON-STATE CURRENT,
T C :: 6SoC, conduction
&
...
rapid uniform
for heating,
for power switch
'REPETITIVE PEAK OFFSTATE VOLTAGE.

Gate Open _
For one full
Center
levels
gate and cathode

ing, power
NONREPETITIVE PEAK OFFSTATE VOLTAGE.

Gate Open
'REPETITIVE
Gate Open
ELECTRICAL
At Maximum
CHARACTERISTICS
Ratings Unless Otherwise Specified and at Indicated Case Temperature (T C)
LIMITS
CHARACTERISTIC
SYMBOL
FOR ALL TYPES

MIN.
TYP.
UNITS
MAX.
Peak OffState Current:

(Gate open, T C = 100C)
Forward Current (IDOM) at VD = VDROM
IDOM
Reverse Current (IROM) at VR = VRROM

2N3870, 2N3896, S6420A
.. . . .
2N3871, 2N3897, S6420B
2N3872, 2N3898, S6420D .

2N3873, 2N3899, S6420M,
S6400N, S6410N,S6420N
Instantaneous
..
..
. ....
.....
or
IROM
. ..
0.2
2*
0.25
2.5*
0.3
3*
0.35
4*
1.7
2.1
mA
On-State Voltage:
iT = 69 A (peak), TC = 25C
iT = 100 A (peak), T C = 25C
. .
..
vT
1.85*

VD = 12 V (de). RL = 30 n, TC = -40C
VD = 12 V (de). RL = 30 n, TC = 25C
For other case temperatures .......
..
VGT
1.5
1.1
See Fig. 11
.. ..
3*

VD = 12 V (de), RL = 30 n, TC = 40C
VD = 12 V (de). RL =30n,
TC = 25C
.
......
IGT
iHO
0.5
46
25
See Fig. 10
80*
40
mA
70
mA
Instantaneous Holding Current:

Gate open,
. . . . . .
. . . . ..
TC = 25C ..........
Gate Controlled
30
See Fig. 7
Turn-On Time:

For VD = VDROM' IGT = 200 mA, tr = 0.1 {..Is,
IT = 30 A (peak), TC = 25C (See Fig. 12 & 14.)
Circuit Commutated
Turn-Off
{..Is
tgt
-
1.25
Time:
VD = VDROM' iT = 18 A, pulse duration

= 50 {..Is,dvldt = 20 V l{..Is, -di/dt
= -30 A/{..Is, IGT = 200 mA, TC = 80C
(See Fig. 15.)
..............
{..Is
tq
..
....
20
40
10
100
0.9*
Critical Rate of Rise of Off-State Voltage:

VD= VDROM, exponential voltage rise,
Gate open, T C = 100C (See Fig. 16.)
V/{..Is
dv/dt
Thermal Resistance, Junetion-to-Case:

Steady-State
Press-fit & stud types
Isolated-stud types ..
....
....
. .
. .
ROJC
CIW
, I
.,
"RSO ---J
"",,-VRROM
LOAD: RESISTIVE
AT SPECIFIED
[ITI
.uc
~I
;::1
w II) 300
. >wH
"''>-
Zz
~~200
-'"
w"
"'u
~~
"'1'c
><'"
e'
WZ
.
0
to
AVERAGE OR RMS ON-STATE
15
CURRENT
20
[I:TIAV)
25
OR ITIAMSI]
92CM-200U
Fig.3-Maximum
vs. on-state current for press-fit and
stud types.
35
-A
'00
",'
"-
35 A
GATE CONTROL
MAY BE LOST
FOLLOWING
SURGE CURRENT
INTERVAL.
we
>--
RMS)]:
CASE TEMPERATURE
60 .
OVERLOAD
MAY NOT BE
REPEATED UNTIL JUNCTION
TEMPERATURE
HAS RETURNED
TO STEAOYSTATE
RATED VALUE
,-"'50C r--...'
~
.....
""o...." .
=
TWA
LOAD: RESISTIVE OR INDUCTIVE
:t;..; ,.~
;.
..........
;:M~~~;;;:::~.:~~~~~;=
Iffi ,:' iill:;"- [;;. ""hi ~~::::n~::;::. ':C-,: iL; 1i~

g .....
i!;
..... ::
"~:P.'!.~f
OJ: ...............
100
#':0:::'.....:~:;~:
.....D
.. ' Ol..---.-l"."
....
~
~
CONOU':T1QN
,;:; .... ~.
.u::;-~
90
~=._
10 ::'
__~
....
.. :":r.ir.:: ...
,r.::'
;+
,1
.,
~:
~
'.:;
[P,t:g~
..........
:::
L!:
~\::;::::::
.:::':::
::
~~~
~ :~~~~:~~
".
;,;
""-'
::::,
~=-:
'.:::.:
..
.:~~
.... ::.
~=.":.-:~
~~;::.-..~
:1: ~..
~~:::: \~
5
OR RMS
10
ON-STATE
"
"::'
.
j~::'~""";;;:~:ii:
~~1'i
...
AVERAGE
..
15
CURRENT
..
20
[ITtAVI
2S
,?![
JO
OR ITIRMSl]
)5
-A
91CSIJ)f,IR2
Fig.5 -Maximum allowable case temperature

VS. on-state current for isolated-stud
types.
PERMITTED
FOR
P~LSf
INDICATED
FORWARD
cue
~ID~H5
PEAK
POwER
n6
REVERSE
0-4
02
GATE CURRENT IlGTRI-A
92CS-I3360R3
Fig.10-DC
gate trigger current (forward)
vs.
case tempera ture.
Fig.12-Gate-controlled
trigger curren t.
'ot'
fd
turn-on time vs. gate
.. "
oJ-----
VD:
o_LL
:_L-_
I-rl:
In.
I
I
I
I
I
I
I
I
I
:
I
!
I
......90%
I
POINT
o_LL-I-l--!-- '. -i.--l.-t,
r--- '.t
I
I
--i
f~:VGT
__ 10"- POINT
o-L - ------Fig.14-Relationship
on-state current,
92CS-13366R2
between
and gate trigger
off-state voltage,
voltage
showing
reference points for definition of turn-on time (tgt)
Fig.15-Relationship
berween
instantaneous
on-state current and voltage showing

reference points for definition
of
ci rcuit commutated
turn-off
time
Irq)'
Mounting of press-fit package types depends upon an

interference fit between the thyristor case and the heat sink.
center and guide the pressfit package properly into the heat
inner diameter of 0.380 0.010 in. (9.65 0.254 mm) and

an outer diameter of 0.500 in. (12.70 mm). These dimen

sions provide sufficient clearance for the leads and assure
thyristor
that no direct force will be applied to the glass seal of the
A recommended
mounting
method,
shown in Fig. 17,
shows press-fit knurl and heatsink hole dimensions. If these

dimensions are maintained, a "worst-case" condition of
PACKAGE
TYPE OF MOUNTING
EMPLOYED
Press-fitted
into
heat sink.
IMinimum required thickness
of heat sink = 1/8 in_ (3.17 mm)
Press-Fit

(60-40 solder which has a melt
ing point of 188C should be
Stud
sink compound.
have been successfully employed. The press-fit case is tinplated to facilitate direct soldering to the heat sink. A 60-40
solder should be used and heat should be applied only long
0.5
0.1 to 0.35
cause solder to

with or without the useof heat-

THERMAL
RESISTANCE-oCIW

sufficient to
flow freely).
thyristor.
0.6
In the United Kingdom, Europe. Middle East, and Africa, mountinghardware policies may differ; check the availability of all items
shown with your ReA satesrepresentative or supplier.
DIMENSIONAL
OUTLINE
FOR TYPES
DIMENSIONAL
OUTLINE
FOR TYPES
2N3870,2N3871,2N3872,2N3873,S6400N
2N3896,2N3897,2N3898,2N3899,S6410N
PRESS-FIT
STUD
REFERENCE
POINT FOR CASE
TEMPERATURE
MEASUREMENT
INCHES
INCHES
MilLIMETERS
SYMBOL
A
</>0
NOTES
MIN.
MAX.
0.465
0_380
0.510
0.505
0.475
0.750
0.155
0.058
0.068
1.47
0.501
</>1
</>2
J
M
</>T
</>T1
0.080
MIN.
MAX.
9.65
12.95
12.83
12.73
11.81
12.07
19.05
3.94
1.73
2.03
0.090
2.29
NOTES:
1. Countour and angular orientation of these terminals is optional.
2. Outer diameter of knurled surface.
DIMENSIONAL
OUTLINE
MilLIMETERS
SYMBOL
NOTES
MIN.
MAX.
MIN.
MAX.
8.4
12.8
13.81
14.28
0.330
</>1
E
0.544
0.505
0.544
0.562
0.113
0.200
J
M
N
</>T
</>T1
</>W
0.422
0.950
0.155
0.453
0.058
0.068
0.080
0.090
1/4-28 Ur~F-2A
NOTES:
13.82
2.87
10.72
1.47
5.08
24.13
3.94
11.50
1.73
2.29
2.03
1/4-28 UNF-2A
2.<PWis pitch diameter of coated threads, Ref: ASA 81.1-1960.

Recommended torque: 50 inch-pounds.
FOR TYPES
3. A chamfer or undercut on one or both ends of hexagonal portion

is optional.
S6420A, B, D, M, N
ISOLATED-STUD
TERMINAL
NO.3
opT
INCHES
MilliMETERS
NOTES
SYMBOL
REFERENCE
POINTFOR CASE
TEMPERATURE
MEASUREMENT
SEATING
NOTES:
PLANE
2. W is pitch diameter of coated threads. Ref: ASA 8,.11960.

is optional.
4. Isolating material (ceramic) between hex (stud) and terminal
A
</>0
</>1
E
F
MIN.
MAX.
0.673
0.614
0.604
0.501
0.551
0.175
J
M
Ml
N
</>T
0.200
0.422
</>Tl
</>T2
</>W
0.505
0.557
0.185
1.055
0.155
0.210
0.452
0.058
0.068
0.080
0.090
0.138
0.148
1/4-28 UNF2A
MIN.
15.34
12.72
13.99
4.44
MAX.
17.09
15.59
12.82
14.14
4.69
26.79
3.94
5.08
10.72
1.47
5.33
11.48
2.03
3.50
2.29
3.75
CONNECTIONS
FOR All
NO.1 - Gate
No.2 - Cathode
Case, No.3 - Anode
TYPES
1
1
1.73
1/428 UNF2A
No.3 is beryllium oxide.
TERMINAL
WARNING: The ceramic of the isolatedstud package

contains beryllium oxide. Do not crush, grind, or
abrade this part because the dust resulting from such
action may be hazardous if inhaled. Disposal should
be by burial.
OOm3LJD
Thyristors
2N6812N690
Solid State
Division
RCA-2N681
through
trolled-rectifiers
three-junction,
silicon
in power-control
applications
age
2N690
are
Symmetrical gate-cathode
construction
- provides
uniform current
density,
rapid electrical
conduction, and efficient
heat dissipation
devices
for use
Direct-soldered
internal construction
exceptional
resistance
to fatigue
and power-switching
requiring
capabilities
blocking-volt-
to
600
forward-current
capability
peres
value)
(average
con-
all-diffused,
volts
and
of 16 am-
or 25 amperes
Each unit
dependable
aged at maximum
performance
All-welded
construction
ratings
and hermetic
to assure
sealing
(rms value).
All-diffused
construction
- assures
exceptional
un iformi ty and stabi Iity af characteristiCs
Mul ti-diffusion
process - permits
of individual
junction parameters
precise
control
Shorted
emitter
gate-cathode
construction
Low leakage
currents,
Low forward
voltage
Low thermal
resistance
Exceptionally
high stud-torquecapabil
ity through
use of high-strength
copper-alloy
stud
both forward
and reverse
drop at high current
levels
CONTROLLEDRECTIFIER
TYPES
2N681 2N682 2N683 2N684 2N685 2N686 2N687 2N688 2N689 2N690
Transient Peak Reverse Voltage
(Non-Repetitive), vRM (non-rep}O .
Peak Reverse Voltage
(Repetitive), vRM (rep)b
.
Peak Forward Blocking Voltage
<Repetitive), vFBOM (rep)C
.
Forward Current:
For case temperature (TC> of +650 C,
and a conduction angle of 180, IFAVd.
RMS value, lFRMSe
.
For other case temperatures and
conduction angles
.
Peak Surge Current, iFM (surge)f:
For one cycle of applied voltage
.
For more than one cycle
of applied voltage
Peak Gate Power, PGM9 ...........
Average Forward Gate Power, PGAVh
Peak Forward Gate Current, iGKMi
Peak Gate Voltage:
Forward, vGKMk
Reverse, vKGMk ...
Temperature:
150
225
300
350
400
500
600
720
volts
100
150
200
250
300
400
500
600
volts
..
600
16
25
See Fig.2
of
150
..
See Fig.3
of
5
0.5
..
..
of
10
of
5
-65 to +150
Operating,
..
of
Free Air, TFA
75
50
..
Storage, T stg
Case#, TC
35
25
UNITS
-65 to +125
See FigA
..
....
..
..
..
..
..
..
..
..
..
..
volts
amp
amp
amp
watts
watt
amp
volts
volts
c
c
Electrical and Thermal Characteristics

at Maximum Electrical Ratings
(unless otherwise specified),
and at Indicated Case Temperature, TC'
CONTROLLED-RECTIFIER
TYPES
2N681 2N682 2N683 2N684 2N68S 2N686 2N687 2N688 2N689 2N690
Minimum Forward Breakover Voltage,
vBOOm:
At TC = +1250 C
Maximum Average <DC) Forward
Blocking Current, IFBOAY":
At TC = +1250 C ...............
Maximum Average (DC) Reverse
Blocking Current, IRBOAY P:
At T C = +1250 C
Maximum Average Forward
Yoltage Drop, YFAyq:
At a Forward Current of 25
amperes and a TC = +650 C .
Maximum DC Gate-Trigger Current,IGTr:
400
500
600
6.5
2.5
ma
6.5
2.5
ma
..
-.~_----_~~_---
At TC = +1250 C .
DC Gate-Trigger Voltage, YGTs:
Maximum at TC = -650 to +1250 C
-
-..
Minimum at TC = +1250 C
Holding Current, iHOO t:
Typical at TC = +1250 C
Maximum Thermal Resistance.
Junction-to-Case,6J_Cu
......
-
~_--------_~~
..
..
..
-_...
-
~_------------
..
# Measured at the center of any of the six major faces
DIMENSIONAL
UNITS
on the perimeter
of the hexagonal
volts
volt
ma
volts
volt
ma
. C/watt
flange.
OUTLINE
o-1NlplNlpf-o
JEDEC TO-48
(I)
CATHODE
(LONG
GATE
~.'C15"f","'
ANODE
TERMINAL
(STUD)
Note
1:
Complete
threads
threads
of head.
Dio.
of
maximum, 0.220" minimum.
Note 2:
defined.
Note
3,
to extend
to within
unthreoded
portion
2-1/2
0.249"
Angular
orien'tation
of these terminals
IS
unSquare or radius on end of terminal
is optional.
1/4-28
UNF-2A.
Mox;mum
p;tch
d;a.
of plated
threads
sholl
be basic
pitch
dia.
0.2268 ", minimum
pitch
dia. 0.2225 ".
Ref. (Screw Thread
Standards for
Federol
Serv;ces
1957) Hondbook H28 1957 P l.
Note 4: A chamfer (or undercut)

hexagonal
on one or both
ends of
In the UnIted Kingdom,

Europe, Middle East, and Africa,
mountinghardware
policies
may diHer;
check
the a\lailabi.lity
ot all items
shown with your ReA sales representatl\le
or supplier.
Suggested Mounting Arrangement for Insulating Types

2N681 - 2N690 from Heat Sink.
Goo-
" W'I
CATHODE
l~~~'
CONDUCTION
ANGLE
T-I
I
YF~OM{rep)
5
AVERAGE
FORWARD
10
CURRENT
15
(I F)-AMPERES
Fig.2
SUPPLY FREQUENCY" 60 CPS SINE WAVE

CASE TEMPERATURE (TCl .650 C
LOAD" RESISTIVE
:~~~~~TJV~O=~~~OR~~~~~i?i;:~f
SINGLE-PHASE
~l~Dt"_~~~~A~~~D
VALUE
150
125
I;;~
~~
K>O
........
a~
I
"'~
i1:e-
l!i
I--
75
~~~
OPERATION.
!NG~.~~~~~~
[~'lllllllrN!A~T1U~R!AL~C!00!Li'
~.s'4:
15
~~
;OW
20
'JZCS-II'JZ8R3
~~
'1
--l'S"
:j-
'<:
gg~~~8[~~ND~~~kfl~I~O;
STUD
MOUNTED DIRECTLY ON HEAT SINK.
HEAT SINK: 1/16"
THICK COPPER WITH
A MAT-BLACK
SURFACE AND
THERMAL
EMISSIVITY
OF 0.9
4J
10
:d>
'X"
<l
'"
W
<l
~
~!j
~~
~~
X'"
<l='
~u
25
100
200
300
400
500
600
INSTANTANEOUS APPLIED FORWARD OR
BLOCKING VOLTAGE (YFBO OR vRBOl-VOLTS
92CS-1l91~R2
REVERSE
[]\lcn3LJ1]
Solid State
Division
Silicon Controlled Rectifier

for High-Current Pulse Applications
Features:
Direct Soldered Internal Construction - Assures Exceptional Resistanceto

Fatigue
The S6431M (formerly RCA type 40216) is an all-diffused,
It is especially constructed for rapid spread of forward cur-
three-junction
rent over the full junction area to achieve a high rate of

change of forward current (dildt) capability and low switching dissipation.
silicon
controlled
rectifier
(SCR) designed
especially for use in radar pulse modulators, inverters,

switching regulators, and other applications requiring a large
ratio of peak to averagecurrent.
RATINGS
CONTROLLED.RECTIFIER
TYPE
UNITS
S6431M
Transient
Peak Reverse Voltage (Non-Repetitive),
(non-rep)O
vRM
Peak Reverse Voltage (Repetitive), vRM (rep)b ....

Peak Forward Blocking Voltage (Repetitive), vFBOM
(rep)C ...............
Forward Current:
For case temperature of +650C, RMS value, IFRMSd
Peak Pulse Current (See Fig.7>
Rate of Change of Forward Current, di/dt" .....
Dynamic Dissipation:
For case temperature of +650 C ...................
For othe~ case temperatures
Gate Power:
I
Peak, Forward or Reverse, for 10 I-lS duration, FGM
(See Figs.lO and 111 .............
Average, POAV9
Temperature:
.....
....................
.....................
............................
Storage, T s~
Operating ( ase), TC' .....
CRITICAL
d,/dt
/-
0-
""
T
63%
i---------
*=0.63
t: RC
------j
V~B
OF VFB
720
600
volts
volts
600
volts
35
900
See Fig.7
amperes
amperes
30
See Fig.4
watts
,
40
0.5
watts
watt
-65 to +150
--65 to +125
c
c
1~
Characteristics at Maximum Ratings (unless otherwise

ancl at Inclicatecl Case Temperature (T C)
Forward Breakover Voltage. VBOOh

At T C = + 1250 C
Instantaneous Blocking Current,
At TC
+1250 C .
Forward. iFBo' ....
Reverse, iRBOk
Forward Voltage DroP. vFm ......
DC Gate-Trigger Current. IGT":

At TC
+250 C(See Fig.lOl ..
DC Gate-Trigger Voltage. VGTP:
At TC = +250 C (See Fig.lOl .
Holding Current. iHOOq:
At TC +250 C ....
Critical Rate of Applied Forward Voltage, Critical
dv/dt' ..............
VFB = vBOa (min. value), exponential rise, and

TC
+1250 C
(See wave shape of Fig.])
Turn-On Time, tonS, (Delay Time + Rise Time)
VFB
vBOO (min. value). iF
30 A. IGT
200 mA.
O.llls min. rise time. and TC = +250 C
(See waveshapes of Fig.2l
Turn-Off Time, tofft t (Reverse Recovery Time + Gate
Recovery Time)
iF = 18 A. 50 IlS pulse width. dVFB/dt = 20 VIlls.
di,jdt
30 A/lls. IGT
200 mA. and TC
+800 C
(See wave shapes of Fig.3)
Thermal Resistance, Junction-to-Cas
specifiecl),
Min.
Typ.
Max.
600
volts
10
10
mA
mA
mA(dcl
See Fig.5
25
80
1.1
0.5
20
70
20
50
volts I
microsecond
microsecond
volts(dcl
mA
I
dVF8/dt~1
NOTE:
FORWARD AND REVERSE
LOSSES
INCLUDED.
'40
......
;;::::
'20
...... .....
;-' 100
dir Idt
I
I
~\
\
----:~
I
VAB
'5
....;::
SO
I
I
~ 60
~
I
I
-+-----t
9'
.....
I
w
.....
r--.
40
V>
I
----..j
3
20
I
o
tOff~
4
MAXIMUM
12
16
20
DYNAMIC POWER DISSIPATION-WATTS
24
28
32
(AVERAGE)
92LS-1893
TC : 65C
GATE PULSE:
500 mA
TIMES INDICATED
ARE MEASURED
OF CURRENT
PULSE.
BEGINNING
TIn
II
I~JLI-b~,~,,~ .
1000
'"'"
'"'"-"
~'"4,I~~~~
f1.~'"
",?'
'".I
FROM
"'?~
,,~'v'
"'.
800
...
II
600
'"'"
'"
G
\~~'Jo
1/
0-
'l-~'
.:+-
1.1
'"
~
'~
"
400
V
200
I!
II
0.5~
III'
III
20
FORWARD
Fig. 5-Forward
22
30
VOLTAGE (vF)-VOLTS
voltage-current characteristics as a function of time.
71.51'5
I
2,s
20
l,s
1
1 I
II I
2.5 s
18
:::
I
I
16
~
~
~
"
14
::i
TC:650C
1000
113uS
=
"
~
~
"
~
~
12
I
J I /
I / / / 1/
10
8-
0.51'5
11/
II,
/ I
3.5,s
!Ii
4,s
J /
/
~
'"
'"x
~
I 77 J /
II I I 7 ITJ -J
II
900
I / /
5,s
/io,s
700
600
500
400
300
200
#~Ous
100
'I V.I '#
'/, f0
0.1
/..1.
'U
NOTE:
800
TIMES INDICATED
FROM BEGINNING
PULSE.
ARE MEASUREO
OF CURRENT
92LM-lItO
Fig. 6-lnstantaneous forward dissipation-forward

istics as a function of time.
current character-
Ipeilk
~ 4000
JE.lI,J-
"-
t:3 3000
~
~ 2000
z
;::
~
1000
7\
\
'\
'.V
fALL 2
~300
B~SE
"-
::l
"' .....
NOTE: FOR 30 WATTHVERAGE FORWARO OISSIPATION

AT Tc .6S"C
(REVERSE fBArT'
OISSIPATION NOT INCLUOEO
I'--
"
RISE
~
~
Il
tALLt"
;::
II
--Ll- ...
FALLI-
~ 1000
........
NOTE:
r-
FOR 30 WATTS AVERAGE
FOR-
WARO OISSIPATION AT TC ' 6S' C

(REVERSE OISSIPATION NOT INCLUOEO)
AVERAGE
GATE
~IS,SIP.U~~
UMIT
I I
I I
.25C
III
MAXIMUM VOLTAGE AT WHICH

TJ:+ 125 0 C
II
4
11
II
MAXIMUM GATE TRIGGER

CURRENT FOR INDICATED
JUNCTION
,TTEMr~~~~URE,
ITJI
TJ'-65'CI
I111I
1 "I
0.1
1I11111111
2
8 _,1.0
'\1
BAS,E,WIDTH.
16" BASE'MOTH "

_RISE2 s
~
~
;::
10k
.116;,
liS
\'
~
w
2000
t'-,...-
,s BlASE llDTJ
SEl
"
1'\ 1\
8'
BASE WIDTH
'\11
400C
......
vcv----
File No. 247

REVERSE
MAXIMUM ..
S6431 M
,""THR'Ao
DF6B
MICA
INSULATOR
AV"'LABUATPVOL'SHED
HMmWAREPR1CS
40
GATE
:RESISTANCE;
.,
0.6
REVERSE
GATE
0,4
CURRENT -
_. -
- .~~: I
0.2
AMPERES
92C5-13360
Fig. 11-Reverse gate characteristics.
In the United Kingdom, Europe, Middle East, and Africa, mountinghardware

policies
shown with your
DIMENSIONAL
may
ReA
differ;
check
the availability
or supplier.
OUTLINE
JEDEC TO-48
MILLIMETERS
INCHES
NOTES
SYMBOL
MIN.
MAX
O.3Xl
0.5014
05<)5
0544
0.562
0200
00,
0.113
0.950
0215
0422
0058
0.138
Y.-28
J
M
N
. -1,
RUER(NCE
POINT FOR CASE
TE",r-(R/lfURE
MEllSUR(~(NT
_..J""
SEATING PLANE
oT
T,
OW
MAX.
MIN.
1.100
.A-
12.8
13.81
13 82
14.28
287
5.08
27.94
24.13
".
0225
0153
0068
1072
, 47
351
Y.-28
0148
U!\lF2A
5.71
11.50
1.13
3_15
UNF-2A
NOTES
1
Contou,
.nd
Pilchd,emel.,ol
A chamle.
isop,io"el.
No.1 - Gate
No.2 - Cathode
Stud, No.3 - Anode
'''II"r.,
0"e,,18110"
of ,hes.e le,m,"el,
': 28 UNF 21\,(co.tedl
0. u"d".cul
0"
0".
'h,uds(ASA
81. 1-1960f.
O. bo,h e"ds 01 he_agonel
pon,on
of
all
items
Thyristors
OOC05LJD
Division
are
2N1845A
2N1846A
2N1847A
2N1842A
2N1843A
2N1844A
Solid State
2N1848A
2N1849A
2N1850A
RCA-2N1842A-2N1850A
con t ro 11 ed-rec t i fi ers
all-diffused,
three-junction
silicon
devices
for
use
in power-control
and
power-
switching
applications
requiring
blockingvoltage
capabilities
to 500 volts
and
forward-current
capability
of 10 amperes
(average
value) or 16 amperes
(rms value).
All-Diffused
FEATURES-
Power-Switching
Types for
Power-Control
and
Applications
all-diffused construction-assures
exceptional
uniformity and stabil ity of characteristics
1J
multi-diffusion process-permits
precise. control
of individual junction parameters
JEDEC TO-48
direct-soldered
internal construction-assures
exceptional resistance to fatigue
.-hermetic
seals
shorted emitter gate-cathode
construction
low leakage currents, both forward and reverse
each unit aged at maximum

dependable performance
ratings
welded construction
symmetrical
uniform
gate-cathode
current
density,
to assure
construction-provides
rapid
electrical
con-
duction, and efficient heat dissipation

designed to meet stringent military
mental and mechanical specifications
exceptionally
environ-
low forward voltage drop at high current levels

low thermal resistance
except ionall y high stud-torque capabi Iity through
use of high-strength copper-alloy stud
rugged terminals
CATHODE
" $" I.
l'l., -:,
:':-\IRM(non-r~1
~F~M(repl
"\/RM(r.p)
Fig.l
- Typical -1 Characteristic
Contra lled-Rect ifier.
of Silicon
RATINGS
SYMBOLS
TRANSIENT PEAK
REVERSE \GLTN:;E
(NON- REPETI TI VE)
PEAK REVERSE \QLTAGE
( REPETITIVE)
REF. 2NISq2A
100
250
vRM (rep)
cycle
500
600
volts
300
400
500
volts
volts
of
125
applied
vol tage
PEAK GATE POWER
PGM
AVERN:;E GATE POWER
PGAV
6
7
PEAK FORWARD
GATE aJRRElIIT
i(J{M
PEAK FORWARD
GATE \QLTAGE:
Forward
vK(},1
Reverse
Ta1PERA1URE:
Tstg
TC
TFA
Storage
( Case)#
(Free- ai r)
See Fig. 3
5
0.5
watt
anp
10
5
-65 to +125
-65 to +125
See Fig. 4
MJl
watts
MJl
.
.
.
.
See Fig. 2
ed vol tage
Operating
400
For more than one eyel e
Operating
2NIS50A
10
iFM(surge)
UNITS
2NISq9A
600
and con
angles
PEAK SURGE QJRRENT:
of
350
200
50
1FAV
one
300
150
75
AVERN:;E FORWARDaJRRENT
For a case
temperaturdF
of +800 C and a conducti on angl e 0 f 1800
For other case tem-
appli
225
35
25
For
150
1
2
vFIDM
( rep)
peratures
duction
2NISqqA
vAM
(non-rep)
PEAK FORWARD IL()(](ING

\QLTAGE (REPETITIVE)
CONTROLLED-RECTIFIER TYPE
2NISq5A 2NISq6A 2NISq7A 2NISqSA
2NISq3A
volts
volts
OC
OC
Electrical
and Then'Ii],1 Characteristics
at Maximum Electrical
Ratings
(unless
othe1'Wise specified),
and at Indicated
Case Temperature,
'I'C
CHARACTERISTICS
SYMBOLS
Minimum Forward
TC
REF.
CONTROLLED-RECT I F I ER TYPE
2NISQ2A 2NJSQ3A 2NISQQA 2NISQ5A 2NISQ6A 2N ISQ7A 2NJSQSA 2NJSQ9A 2NJS50A
vllXl
10
+125
'f;fiiimum .~erage
~;:~ward Blocking
IFBOAV
11
+125
Maximum Average
Reverse Blocking
IRBOAV
12
+125
VFAV
13
+80
1.2
IGT
14
+125
45
VGr
15
Breakover
Vol tage
rrent
UN ITS
50
100
150
200
250
300
400
500
22.5
19
12.5
6.5
5.5
ma
22.5
19
12.5
6.5
5.5
ma
25
volts
Current
Maximum Average
Forward
Vol tage
Drop
Maximum OC Gate
Trigger Current
OC Gate-Trigger
Voltage:
Minimum
Holding
Current
(Typi cal)
Maximum Thermal
Resistance,
Junction-
* Numerical
..
Measured
to-Case
iHOO
16
+125
8JC
17
to
Table
References
at
the
center
are
of
any
of
.
of
the
...
3.5
3.7
0.25
0.3
{-40
-65
,
{+125
+100 ,
Maximum
six
Symbols,
major
faces
and
on
Definitions
the
perimeter
ma
Terms,
volts
on
of
page
the
4.
hexagonal
flange.
volts
volts
volt
volt
ma
Clwatt
o 1.-----r--..I'80
SUPPLY FREQUENCY 1I: 60 CPS SINE WAvE

CAS[ TEMPERATURE (TC) =80 C
LOAO-RESISTIVE
~~~~V~C:::R~E~~~~~~;:~~~v~~~J:::~~~~~ttlEO
VALUE
150
CONDUCTION
ANGLE
125
'"
~~
100
a~
~,l
""
- --
.............
75
:1
....
50
:t~
25
0
OSlO
AVERAGE
FORWARD
CURRENT
(IFAV
15
)-AMPERES
20
92CS-11905R3
Fig. 2 - Rat ing Chart for Types

through 2N1850A.
2N1842A
Fig. 3 - Surge Current Rating Chart

for Types 2N1842A through 2N1850A.
~ -=~_::--::;
NATURAL
COOLING.
SINGLE-PHASE
OPERATION.
CONDUCTION ANGLE= 1800
-: ,,:;-.:;CONTROLLED-RECTIFIER
STUD'It: ::::-i
MOUNTED DIRECTLY ON HEAT SINK.
~. - .- .-~
.:
;:0::-::;:-:
-=::::: -:-:::::'" .;:::-:

9 :~~ -:::----"
~_ ~
:-:~._
HE:TMi~~~~~I~;-;~~~~C~O~~EOR
WITH
THERMAL
EMISSIVITY
OF 0.9
_::~.,-r:r';.:....
o
0.5
I
1.5
2
2.5
3
INSTANTANEOUS FORWARD VOLTAGE DROP (vr!-VOlTS
92CS-1l912R1
Fig.4 - Operat ion Guidance Chart

Fig.5 - Maximum Forward Characteristics

100
200
300
400
500
INSTANTANEOUS APPLIED FORWARD OR
REI/ERSE BLOCKING VOLTAGE (vFeo OR vRsol-VOLTS
-75
o
o
-~
-25
25
75
100
125
CASE TEMPERATURE (TC)-OC
92CS-II908RI
Fig. 6 - Typical Forward andReverse

Leakage Characteristics
for Types 2N1842A through '2N1850A.
Fig. 7 - Gate Trigger-Current

Characteristic
for Types 2N1842A through '2N1850A.
1~
n~
.544
MAX.
~
~
L-:'
1~gr.L
O.
.:~~oIAT--
E
NOTE 2
1--:-.
~-.L~
140
l075
t~~~
1
.060
CIA
875
MA I U 'GATE
q GE REO
T TRIG Eft A
UNITS RED
~T1NG
453
PLANE
A22
Fig.8
- Gate Trigger- Vol tage Charaeterist

ies
L,."'""'",
e-OF"
MICA
INSULATOR
AVAllA8I.EATPU8ll$l-lD
HAROWAREPAICES
~"'''.".
(CHASSIS)
e
DF3H
'NSULATlNGSUS"'NG
f.
0.0.-0.315
:~~~~~;~:U~'~:E~'
--.fO'\
DF68
HARDWARE
",v~,I:"~LlfN:TU~:L~~~D
~~
HAROWARE
LOCK
WASHER
NA38B
HEXNUT
(1.53mm) MAX.
PRICES
~:~CTOR
I'flICES
NRll.A
in. IB.OO mm) MAX.
""
V 'L . l
ATPUaLl$HED
HAROWA,"'E PRICES
~}
~
~
\OJ
In the United Kingdom, Europe. Middle East, and Africa. mountinghardware policies may differ; check the availability of all items
with your ReA sales representative
or supplier.
shown
Sugges tedMount ing Arrangement
'lN1842A- '2N1850A from Heat Sink.
for Insulat
ing Types
HoTE I:
COMPLETE
THREADS TO EXTEND TO WITHIN
2 1/2
THREADS
OF HEAD. 01 A. OF UN THREADED
PORTION
O.2ij9"
MAXIMUM.
0.220" MINIMUM.
HoTE 2:
ANGULAR
ORIENTA,ION
OF THESE TERMINALS
IS
UNDEFINED.
SQUARE OR RADIUS ON END OF TERMINAL
IS
OPTIONAL.
HoTE 3:
1/ij-28
UNF-2A. MAXIMUM
PITCH DIA. OF PLATED
THREADS
SHALL 8E BASIC PITCH DIA. 0.226B".
MINIMUM
PITCH DIA. 0.2225".
REF. (SCREW THREAD
STANDARDS
FOR FEDERAL
SERViCES
1957) HANDBOOK
H28 1957 Pl.
HoTE~:
A CHAMFER
(OR UNDERCUT)
ON ONE OR BOTH
ENDS OF HEXAGONAL
PORTION
IS OPTIONAL.
Thyristors
2N3650 2N3651
2N3652 2N3653
S7430M
[Il(]5LJD
Solid State
Division
RCA2N3650
to
alldiffused
triode
2N3653,
silicon
thyristors)
tions
such
highcurrent
inclusive,
controlled
intended
high dv/dt,
and high di/dt

up to 25 kHz.
The 2N3650
switching
applica
switching
regulators,
and
They feature fast turn-off,
characteristics
to 2N3653
voltage ratings
Type S7430M
are
(reverse-blocking
for high-speed
as power inverters,
pulse applications.
frequencies
and the S7430M*
rectifiers
have forward
and may be used at
and reverse
Fast
turnaff
time -15
and dv/dt
High peak.current
Shorted.emitter
Forward
AII.diffused
uniformity
Fast Turn-Off Types

for Inverter and
Pulse Applications
max.
I.IS
Symmetrical
capability
construction
gate dissipation
construction
and stability
- assures
uniform
gate.cathode
current
and efficient
ratings
exceptional
Hermetic
of characteristics
PEAK REVERSE
, ..
VOLTAGE
, .
NON-REPETITIVE
PEAK FORWARD VOLTAGE
Gate Open .
,
,.,
'REPETITIVE
Gate Open
PEAK REVERSE
...
'REPETITIVE
Gate Open
PEAK OFF-STATE
VOLTAGE
, , .....
. ,
density,
heat
construction
rapid
electrical
- provides
conduction,
dissipation
construction
Low thermal
2N3650
'NON-REPETITIVE
Gate Open ,
GATE
capabilities
gate.cathode
and reverse
CATHODE
off-state
of 100, 200, 300, and 400 volts, respectively.

has a forward
and reverse off-state
voltage
rating of 600 volts.
High di/dt
35AMPERE SILICON
CONTROLLED
RECTI FI ERS
resistance
2N3651
2N3652
2N3653
S7430M
VRSOM
150
300
400
500
700
VDSOM
150
300
400
500
700
VRROM
100
200
300
400
600
VDROM
100
200
300
400
600
VOLTAGE
, ..
'PEAK SURGE (NON-REPETITIVE)

ON-STATE CURRENT:
For one cycle of applied principal voltage (60 Hz, sinusoidal)
ON-STATE CURRENT:
For case temperature (Te) = 250C
Average DC value, conduction angle of 1800
RMS value ....
'RATE-OF-CHANGE
VDM ~ v(BQ)O' IGT ~ 200 mA. t,- ~ 0.1 fJ-S (See Fig. 2)
'GATE POWER DISSIPATION
PEAK FORWARD (for 10 fJ-S max.) ......
AVERAGE (averaging time ~ 10 ms, max.) ..
ITSM
IT(AV)
IT(RMS)
di/dt
PGM
PG(AV)
'TEMPERATURE
RANGE
Storage ..............................
Operating (Case). ..
Soldering (10 s max. for case) ................
.-
..
..-
..
...
.-
.-
180
25
35
400
40
1
-65 to 150
-65 to 120
225
~
~
.~
.
~
~
A
A
A/fJ-s
W
W
C
C
C
~
C/l
(')
:J;:)
",'
'In accordance
with JEDEC registration
data format (J&-14, RDFU-applies to the JEDEC (2N-Seriesl types only.
11-73
ELECTRICAL
Unless
CHARACTERISTICS,
Otherwise
At Maximum
Ratings
and at Indicated
Case
Temperature
(TC)
Specified
LIMITS
CHARACTERISTIC
Type
2N3650
SYMBOL
Type
2N3651
Type
2N3652
Type
2N3653
Type
S7430M
UNITS
MIN. TYP MAX. MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.
INSTANTANEOUS FORWARD BREAKOVER
VOLTAGE:
Gate Open, T C = 120 oC
V(BOlO
100
200
300
400
600
PEAK OFF-STATE CURRENT:

(Gate ()pen, T C = 120 C)
FORWARD, VOO = VOROM
100M
5.5
IRROM
5.5
2.05
2.05
2.05
2.05
2.05
80
180
80
180
80
180
150
500'
150 500'
150
on
REVERSE, VRO
= VRROM
INSTANTANEOUS ONSTATE VOLTAGE:

For iT" 25 A, T C = 25 c
DC GATE TRIGGER CURRENT:
Vo = 6 V (DC), RL = 411, TC
Vo
vT
= 25 c
= -65 OC
IGT
= 25 0c
= VOROM, RL = 20011, TC = 120 c
= 6 V (DC), RL = 211, T C = -65 c
VGT
= 6 V (DC),
RL = 211, T C

Vo = 6 V (DC), RL = 411 , TC
Vo
Vo
INSTANTANEOUS HOLDING CURRENT:

Gate Open
At TC =25 0c
At TC =-65 c
80
180
80
180
150
500'
150
500'
1.5
1.5
1.5
1.5
1.5
0.25'
0.25
0.25'
0.25'
0.25
4.5'
4.5'
4.5'
4.5'
4.5
75
150
150
350
75
150
150
350
75
150
150
350
75
150
150
350
75
150
150
350
lOA
dv/dl
200
200
200
200
200
V/"s
lq
11
15
II
15
11
15
11
15
II
15
"s
lq
12
15'
12
15'
12
15'
12
15'
12
15
"s
eJ-C
1.7
1.7
1.7
1.7
CIW
iHO
CRITICAL RATE-OF-RISE OF OFF-STATE

VOLTAGE:
Voo = VOROM
Exponential rise, TC
(See Fig_ 4.)
= 120 0c,
CIRCUIT C<J,lMUTATEO TU RN-OF F

TIME (Rectangular Pulse):
VOX = VOR<J,l , iT = 10 A (pulse
duratioo = 50 "s), IGT = 200 lOA
at turn-OIl, -<li/dt = 5 AI"s,
dv/dt = 200 V/"s, VRX = 15 min.,
VGK = 0 V (at turn-otf),
TC = 120 OC (See Fig_ 4 & 5)
CIRCUIT COMMUTATEO TURN-OFF
TIME (Half-Sinusoidal Waveform):
VOX = VOROM, iT = 100 A (pulse
duratioo = 1.5 "s), IGT = 200 lOA
dv/dt = 200 V/"s, VRX = 30 V min.,
VGK = 0 V (at turn-off),
TC = 115 c (See Fig. 6 & 7)
THERMAL RESISTANCE:
Jlllctioo-to-Case
1.7
.~
I"
------l
~---r'
r
, I
VRSOM----l
~VRROM
/
dvd'""'I
VDX
-------- :----i-
~VRX
VRXM
I
I
-1-I
'TX.
L __
fRXM
-----r-
~"0631
t"
,------0
Iff
'"
, __
1 ,
9
1
I-------
RC
----t
------l
Fig. 4-Relationship between off-state voltage, reverse voltage, on-state current, and reverse current, showing
reference points defining turn-off time (tgJ, rectangular pulse.
SUPPLY
VOLTAGE
$UPPl Y
VOLTAGE
~II
II~
*FQR ADDITIONAL INFORMATION
ON GATE TRIGGER CIRCUITS, Ere.
REFER
No.7
TO
JEOEC
SECTION
STANDARD
6.204.2.
VOLTAGE
ANODE CATHODE
I
I
I
I
VRX.
~II
~'q---.l
I
Fig. 6-Relationship
between off-state voltage, reverse volt
age, on-state current, and reverse current showing
referencepoinrs for specification oftum-off time (tq),
half sine wave pulse.
COOLING CONSIDERATIONS
The overall thermal resistance, case to air, needed to
operate .these devices at a given current and a specific
ambient air temperature is shown in Fig. 8. For example:
dissipation of 20 watts and an ambient air temperature of
43 c (110 OF), the required thermal resistance, case to
air, is 2 C/W. This required case-ta-air thermal resistance included both case-ta-heat sink and heat sink-toair thermal resistances.
Typical values of case-ta-heat sink thermal resistances
for different mounting arrangements are shown in Table l.
Thermal resistance characteristics of commercial heat
sinks are contained in various manufacturers' data sheets.
CURRENT WAYEFORM
'T:=ru
--J2:--J
35 . (RM5)
LIMIT
~
100
PEAK ONSTATE CURRENT (lTM)-A
1~
CURRENT WAVEFORM
CURRENT WAvEFORM
-A-A
0-'
ITM
-tt-J
RATE(F-RISE
toO
(IF
REAPPLIED
200
OFf-SlAlE
VOLlAGE
)0()
(d.I.t)-Y/lI
""."',
0-1
-tt-J
OFF-STATE VOLTAGE (VDX)" 600 V

RATEOfRISE
OF OFF-STATE
VOLTAGE
(d./dt) 200 V/~ .
PEAK REVERSE VOLTAGE (VRXM)" 200 V
HALFSINUSOIDAL
CURRENT
WAVE FORM
CASE TEMPERATURE (Tel"
l1S 0(
-,,-1"\.
L...J \
1110
L...J
IN5TAHTANEOUS OFF-STATE VOLTAGE ("OX).

600 V
RATE-OF-RISE OF OFF-STATE VOLTAGE (d"/dt).
200 VIt,.
PEAK REVERSE VOLTAGE (VAXM> 200 V
HALF.SINUSOIDAL CURRENT WAVE FORM
CASE TEMPERATURE (TC>. 1150(
REAPPLIED OFF-STATE VOLTAGE (VOX>. 600 V

RECTANGULAR CURRENT PULSE
RATE-OF-DESCENT OF ON-STATE CU RRENT
(-di/dt)
10 Alus
CASE TEMPERATURE
..,
g)
2
.., "j'jEjTEj"jPiERj'iTiURiEi(iTcjlj"j'i"'IOCiiiiimilllII
;lIC'
S
~~
RECTANGULAR
PULSE (FORWARD CURRENT) WIDTH.
r~
~~~.
~
:+-,\~~~"i'~$~:ij:ijt
...
a
~
ffi
~
SO ,
c...~~f{f
10
,,"t;t:~'\~
f(,~'4:-
I'II~III
,~
(T >.
120 ore
'OOOC
";i"oc
2N3650, 2N3651,2N3652,2N3653,S7430M
~
_
Directly mounted on heat sink (HeatSink Compound: Dow Corning 340
silicone
heat-sink compound, or
equivalent.)
1/' 28THR'Ao
oF68
AROWIilA(I'R'C(S
~~~~
..~~~~~~~:.EO
2N3650- 53
40735
(~~:~~~7K
0----
-fO\
~;i:
INSULATOR
.o.VAlllleu.o.1PU8L1SHO
,o,RDWAR(
~~~O~~SHER
NA388"
and heat sink).

Without
INSULATING
BUSHING
~no~g6~;~'7,t,~t~m)
~H~CK~'~~
compound
2.80C/W
1.80C/W
compound
MAX
Heat-Sink
~::~~:~~
:;,:~~LIS"E()
...
"'V"'L"IIU
Compound:
340 silicone
equivalent.)
heat-sink
Dow Corn ing

compound,
Of
"'PU8~IS"ED
-Normal
ROW"REPA'CES
value.
compound,
Actual
mounting
value
surface,
will
vary slightly
insulator
depending
thickness,
on use of heat sink
mounting
torque,
and etc.
HEXNUT "l::J)
NOTE 1: Dimensions in parentheses

rived from the basic inch dimensions
NOTE 2: The recommended
DIMENSIONAL
JEDEC
.0; ,\
II
TERM INAL NO.2
00,
F
J
M
N
or
.T,
.w
is 26 to 36 in. -lb.
and are deapplied
to a
torque
OUTLINE
TO-48
.' --
LJ _f.-__
SYMBOL
torque
are in millimeters
as indicated.
\4-28 UNF-2B hex nut assembled on thread. The applied

during installation
should not exceed 50 in. -lb.
II.
heat-sink
With heat-sink
CONNECTOR
-"
Mounted on heat sink with a 0.004 to

0.006-in. (0.10 to O.l5-mm) thick
mica insulating
washer (between unit
OF3H
~~NR68A
PRtCES
0.90C/W
TEMPERATURE
MEASUREMENT
A
-=(:I:
PLANE
NG
92CS-15208R2
INCHES
MIN.
MAX.
0.330
0.505
0.5
0.562
0.200
1.100
0.225
0.453
0.5
0.113
0.'"
0.215
0.422
0.058
0.'"
0.138
0.148
1/428 UNF2A
MILLIMETERS
MIN.
MAX.
12.8
13.81
13.82
14.28
2.87
5.08
24.13
27.94
5.46
5.71
10.72
11.50
1.47
1.73
3.51
3.75
1/428 UNF2A
8.'
NOTES
,
1
NOTES:
1. Contour and angular orientation of th&se t8l'"minall is optional.
is optional.
3. 4lW is pitch diameter of coated threads.
REF: ScrewThread Standards for Federal Services, Handbook H28.
P.rt I Recommended Torque: 25 inchpounds.
TERMINAL CONNECTIONS
Terminal 1 (Small Lug) - Gate
Terminal 2 (Large Lug) - Cathode
Terminal 3 (Stud) - Anode
ffilCffiLJD
Solid State
Division
2N3654
2N3655
2N3656
2N3657
S7432M
2N3658
Fast turn-off
High di/dt
'I
time - 10 J.lS max.

and dv/dt
Low thermal
RATINGS,
VRSOM
PEAK OFF-STATE
may
be used
at frequencies
up to
75
150
300
400
500
700
300
400
500
700
300
400
600
300
400
600
VOLTAGE:'
.
_
PEAK OFF-STATE
VOLTAGE:'
.
angle
R~_
VOSOM
75
VRROM
150
50
VOROM
50
100
100
200
200
180
Average
.
'PEAK SURGE (NON REPETITIVE) ON-STATE CURRENT:
60 Hz (sinusoidal)
35
25
180
di/dt
400
A/!,s
12t
165
A2s
'PGM
40
1
W
W
ITIRMS)
IT(AV)
ITSM
OF CHANGE OF ON-STATE CURRENT:
o=
V
VOROM.IGT
200 mA. t,
0.1!,'
FUSING CURRENoT lfo, SCR protection):
TJ
'GATE
types
PEAK REVERSE VOLTAGE:'
ON-STAT~ CURRENT:
T C = 40 C, conduction
'RATE
These
25 kHz.
Absolute-Maximum Values:
Gate Open
'REPETITIVE
Gate Open
applications.
reduced
PEAK REVERSE VOLTAGE:'
NON-REPETITIVE
Gate Open
'REPETITIVE
faster turn-on with substantially

heating effects
resistance
These RCA types are all-diffused,

silicon controlled
rectifiers
designed for high-frequency
power-switching
applications
such
as inverters,
switching
regulators,
and high-current
pulse
'NON-REPETITIVE
Gate Open
Center gate construction

... provides
rapid uniform gate-current
spreading for
Anode
MAXIMUM
capabilities
Shorted-emitter
gate-cathode
construction
... contains an internally diffused resistor
between gate and cathode
ISee Fig. 151
-65 to 120 C. t
1 to 8.3 m,
POWER DISSIPATION:'
Peak Forward (for 10 IJs max., See Fig. 7)

Average (averaging time = 10 ms max.l
'TEMPERATURE
RANGE:
Storage
Operating
TERMINAL
"
.
(Case)
TEMPERATURE
lOuring soldering):
For 10 s max. (terminals and casel

STUD TORQUE:
Recommended
Maximum (00
PG(AVI
Tstg
TC
-65
to 150
-65 to 120
c
c
TT
225
35
in-Ib
50
in-lb
1"S
NOT EXCEEO)
In accordance with JEDEC registration data format (JS-14, RDF-1) filed for the JEDEC (2N series) types.
These values do not apply if there is a positive gate signal. Gate must be open or negatively biased .
Any product of gate current and gate voltage which results in a gate power less than the maximum is permitted .
. For temperature measurement reference point, see Dimensional Outline.
LIMITS
FOR ALL
SYMBOL
CHARACTERISTIC
MAX.
5.5
vT
2.05
75
150
iHO
150
350*
dv/dt
200
80
180
IGT
150
500*
1.5
VGT
0.25*
4.5*
10
iJ.s
10
iJ.S
Current:
(Gate open, T C = 120CI

Forward
Current
IIDOM)
Reverse Current
IDOM
or
at VD = VDROM
(I ROM I at V R = V R ROM
IROM
.....
2N3654,2N3655,2N3656,s7432M
.......................
. . . . . . . . . . . . . . . . ..
2N3657
2N3658
Instantaneous
.....
iT = 25 A (peak), T C = 25C
Holding
..
T C = _65C
.... ....
Rate of Rise of Off State
.. ... . ......
DC Gate Trigger
TC=
25C
TC=
_65C
..... .. .... .....

...
..
Voltage:
..... . ... .
... .. .....
VD= VDROM'
RL = 200n,
TC= 120C
VD=6
V Idel, RL = 2n, TC= _65C
Commutated
(Rectangular
V/!1s
.....
.......
VD = 6 V (de), RL = 4 n, TG = 25C
Circuit
mA
Current:
6 V (de), RL =4n.
6V (de), RL = 2n.
VD=
.............
Voltage:
V D = V DROM, exponential
voltage rise,
Gate open, TC = 120C Isee Fig. 16)
DC Gate Trigger
Current:
Gate open, T C = 25C
VD=
mA
On-State Voltage:
Instantaneous
Critical
UNITS
TYP.
MIN.
Peak OffState
TYPES
Except as Specified
Turn-Off
...
mA
Time:
Pulse)
VDX = VDROM'
iT = 10 A, pulse duration = 50 !1S,
dv/dt = 200 V/iJ.s, - di/dt = -5 A/iJ.s, IGT = 200 mA,
VRX
= 15 V min.,
VGK = 0 V lat turnoff),
TC = 120C
tq
Isee Figs. 19 & 20).

Circuit Commutated
(Sinusoidal
VDX
Turn-Off
Time:
Pulse)
= VDROM'
iT = 100 A, pulse duration
= 1.5 !,S, dv/dt
200 V/iJ.s, VRX = 30 V min., VGK = 0 V lat turn-off)

TC = 115C
Thermal
Resistance
Steady-State.
=
tq
Re-JC
Isee Figs. 17 & 18)

Junction-to-Case:
1.7
C/W
CURRENT WAVEFORM
ITM_I\_"
L..J
,
0-'
-I.d- I
L"...j
'.,
r--I I
I I
VRSOll~
""-VRROll
'I"
b,_
LiDO
IVOSOM
VOROM
SO
PEAK ON-STATE
100
CURRENT
150
(llM) -...
Fig. 2 - Power dissipation vs. peak on-state current.
200
92SS.4318~1
CURRENT
ITM
WAvEFOR
CURRENT
..
~;---l
-'2--1
'1 '2.,
0.05
~J
o.'s.
~<
35 .. (RM5)
1I1tl1T
m
PEAK
msml
Fig. 3 - Maximum allowable case-temperature

on-state current.
CURRENT
vs. peak
W"'VEFORM
'T:TLJ
~.;---l
35 .. (RittS)
LIMIT
fft
WAVEFORM
'T:TLJ
_-fLJ'\
...1" I-
100
ON-STATE
CURRENT
1~
(IT/II)-'''
REAPPLIED
Off STATE VOLTAGE (Vox)"
RATE.Of.RISE
Of REAPPLIED
OFf-STATE
VOLTAGE (d. dt)= 200V/~s
CURRENT PULSEWIDTH (RECTANGULAR)"
RATE.OfDESCENT
Of ON STATE-CURRENT
(di (II)" 10 A ~ s
600 V
-l;O;F~F'~\T!A~TE!!VOlL1TA1G;E~(V1D!)j
--;so;V;~;:llllllll
15
50 ~ s
,,, SO to.
~ CIJRRE'"
~Eto.~O"'-')'to.'
ONSTATE
OffSTATE
VOLTAGE (VOX)" 600 V
RATEOf-RISE
Of OFF-STATE
VOLTAGE
(dy/dl)"
200 v,~ s
PEAK REVERSE VOLTAGE (VRXM)" 200 V
HALf SINUSOIDAL CURRENT WAVE fORM
CASE TEMPERATURE
(TC) " 115 oC
CURRENT
CASE TEMPERATURE
""
:::'
(IT)"
(TC)"
~\'~;'.~;i]"~ff=ff=~
S
20 A (RECTANGULAR
PULSE)
1200C
:-:-:::- .:C':
i':'~
ii-::
o
lOO
RATE.Of.RISE
92S54348
Fig. 13 - Typical variation of turn-off time with peak on-state

current (half-sine-wave pulse).
Fig. 14 -
Of REAPPLIED
200
OFFSTATE
VOLTAGE
JOO
(d.
dt)-V
~s
9255-4347
Typical variation of turn-off time with rate-of-rise

of reapplied off-state voltage (rectangular pulse),
CRITICAL
dv/d'
.2Y.=O.63
dl
t= RC
SII
Fig. 17 - Relationship between off-state voltage, reverse voltage,

onstate current, and reverse current showing reference
points for specification of turn-off time (tq), half-sinewave pulse.
VDX
-------- :----i-
~VRX
I
I
I
I
I
-
-----0
I
I
'n -------'9'
------1
I
'q
SUPPLY
VOLTAGE
vRXM
----I
Fig. 19 - Relationship between off-state voltage, reverse VOltage,

on-state current, and reverse current showing reference
points defining turn-off time (tq), rectangular pulse.
~~~jll
II~
" ,"m"
~OF~
MICA
INSULATOR
~AVAILA8LEATPV8LISHEO
~
HAROWAREPR'CES
CD
"'AT"NK
(CHASSIS)
DF3H
INSULATING
BUSHING
0---- ~~c~~'~~i
~nO~g6~i~7:.~t~~)
MAX.
0
-@)
ifT
~i~:
INSULATOR
/l,VA'LA8LEATPU8LlSHEO
H/l,ROWAREPR,CES
NRll0A
LOCK
AVA'LABLE/l,TPU8L'SHEO
:/l,::~REI'RICES
CONNECTOR
AV/l,'L/l,BLEATPUBLISHEO
H/l,ROWAREPR,CES
~}
WASHER
NA38B
HEXNUT
In the United
Kingdom,
Europe, Middle
East, and Africa,
mountinghardware
policies
may differ;
check
the availability
of all items
or supplier.
DIMENSIONAL
OUTLINE
JEDEC TO-48
MOUNTING
TYPE
THERMAL
RESISTANCE*
(Case-to-Heat
Sink)
ARRANGEMENT
INCHES
Directly mounted on heat sink (Heat-
NOTES
0.9C/W
.0,,
equivalent.)
0.006-in. 10.10 to 0.15-mml thick

mica insulating washer (between unit
and heat sink).
2N3658
S7432M
MAX.
0.505
2.8C/W
With heat-sink compound
1.8C/W
12.8
0.544
13.81
0.544
0.562
13.82
14.28
0.113
0.200
2.87
5.08
0.950
1.100
24.13
27.94
0.215
5.71
0.422
I 02~
5.46
10.72
11.50
0.058
0.068
1.47
0.138
0.148
3.51
.w
1/428
0.453
UNF2A
1/428
1.73
3.75
UNF2A
1.
4JW.is,pitch
Part
diameter
ScrewThread
I
Recommended
of coated
threads.
Standards
for
Torque:
Federal
value.
compound.
and etc.
NOTE
2:
Actual
will
vary slightly
depending
on use of heat sink
mounting surface, insulator thickness, mounting torque,
The recommended
UNF-2B
during
torque
is 35 in.-Ib.
hex: nut assembled

installation
should
on thread.
not exceed
applied
to a
The applied
50 in.lb.
Ya-28
torque
Services,
35 inchpounds.
340 silicone heat-sink compound, or

equivalent.)
*Normal
NOTES:
REF:
Dow Corning
8.4
.T
.T,
Without heat-sink compound
Heat-Sink Campaunt:
MIN.
0.330
,_~~'-
Mounted on heat sink with a 0.004 to
2N3654-
MILLIMETERS
SYMBOL
Sink Campaunt:
Dow Corning 340
silicone heat-sink compound, or
No.1 - Gate
No.2 - Cathode
Case. No.3 - Anode
Handbook
H28,
Rectifiers
RCA-IN440B, IN441B, IN442B, IN443B,lN444B,

and IN445B are heTlretically sealed silicon rectifiers of
the diffused-junction
type, designed for use in power
supplies of magnetic amplifiers, radio receivers, dc
':Jlocking circuits, power supplies, and other military
md industrial applications.
These devices have dc forward-current ratings
to 0.75 ampere at an ambient temperature of 250C,
and peak reverse voltage ratings of 100, 200, 300, 400,
500 and 600 volts, respectively.
The IN440B through IN445B feature (1) sturdy
and compact mount structure, (2) axial leads for flexibility of circuit connections, (3) welded hermetic sealsevery unit is pressure-tested
to assure protection
against moisture and contamination, (4) superior junction formation made possible by a diffusion process
with very precise controls .. In addition, these devices
are designed to meet the following stringent environmental, mechanical
and life requirements
of prime
importance in military applications:
(a) special temperature-cycling tests to assure stable performance over
the entire operating temperature range, (b) special
coating to provide protection against the effects of severe environmental conditions,
RECTIFIER
Absolute-Maximum
Ratings,
for a Supply

.
RMS SUPPLY VOLTAGE
For resistive or inductive loads .....
DC REVERSE (BLOCKING) VOLTAGE.
FORWARD CURRENT:a
Frequency
DIFFUSED JUNCTION
SILICON RECTIFIERS
For Power-Supply Applications
In Industrial and Military
Electronic Equipment
stringent
environmental
insure
dependable
military
applications
hermetically
wide
s'laled
and
JEDEC
operating.temperature
lN440Bl
lN441B
1N442B
mechanical
performance
00-1
in
tests
industrial
package
range:
-65 to +1650C
lN444B}
lN445B
-65 to +150 C
lN443B
SERVICE
of 60 Hz:
IN440B
IN441B
IN442B
IN443B
IN444B
IN445B
UNITS
100
200
300
400
500
600
70
100
140
200
210
300
280
400
350
500
420
600
V
V
750
500
250
3.5
15
750
500
250
3.5
15
750
500
250
3.5
15
750
500
250
3.5
15
650
425
0
3.5
15
650
400
0
3.5
15
mA
mA
mA
A
A
165
165
165
165
-65 to +175
150
150
c
c
DC:
at TA = 50C.
at TA = 100C
at TA = 150C
Peak, Repetitive . _
Surge, One-Cycle
TEMPERATURE RANGE (Ambient):
Operating.
Storage.
.
.
to
and
lNMOB
CHARACTERISTICS
lN441B
lN444B
lN445B
1.5
1.5
1.5
1.5
1.75
}J1\
200
200
200
200
}J1\
1.5
1.5
1.5
Maximum Reverse Current (DC)

at maximum peak reverse voltage
0.3
0.75
Maximum Reverse Current

(averaged over I complete cycle
of supply voltage):
at maximum rated PRV, T A = 1500C
100
100
lN443B
'"
w
<r
~ 750
<l
~
<
-'
~ 62!
UNITS
"
lr
>z
w500
~
&'
'"~
8
z
~
z
~
lr
0375
lr
1ilr
e 250
10
'2
g
~
lN442B
Maximum Forward Voltage Drop (DC)

at full load current. ... ..... .
125
"x
~
Fig.2 - Typical Forwara Voltage ana Current Characteristic
for RCA-1N440B through lN445B.
The maximum
ratings
in the tabulated
data
are
established
in accordance
with the following
definition
of the Absolute-Maximum
Rating System
for
rating
electron
devices.
Absolute-Maximum
of
operating
able
ratings
and environmental
to any electron
as defined
by its
be exceeded under
device
published
the worst
are
limiting
conditions
values
applic-
of a specified
type
data. and should

not
probable
conditions.
The device manufacturer

chooses these values
to provide acceptable serviceability
of the device,
taking no responsibility
for equipment
variations,
environment
variations, and the effects of changes
in operating
conditions
due to'vdriations
in
device characteristics.
The equipment
manufacturer
should design so
that initially
and throughout
life no absolutemaximum value for the intended service is exceeded
with any device under the worst probable operating
conditions
with respect to supply-voltage
variation, equipment
component
variation,
equipment
control adjustment,
load variation,
signal variation, environmental
conditions,
and variations
in device characteristics.
The flexible
leads of these rectifiers
are
usually soldered to the circuit elements.
It is
desirable
in all soldering
operations
to provide
Some slack or an expansion
elbow in the leads to
prevent excessive
tension
on the leads.
It is
important
during the soldering
operation
to avoid
excessive heat in order to prevent possible
damage
to the rectifiers.
To absorb some of the heat,
grip the flexible
lead of the rectifier
between
the case and the soldering
point
with a paIr
of pliers.
When dip soldering
is employed in the assembly
of printed circuitry
using these rectifiers,
the
temperature
of the solder
should
not exceed
2~5 C for a maximum immersion
period of 10 seconds.
Furthermore,
the leads should not be dip
soldered beyond points A and B indicated
on the
Dimensional
Outline Drawing.
Because
the metal
cases
of these
rectifiers may operate
at voltages
which are dangerous, care
should
be taken
in the design
of
equipmen~
to prevent
the operator
from coming
in contact
with the rectifier.
It is recommended that these rectifiers
be mounted
on the
underside
of the chassis.
100
TEMPERATURE (OC)
AMBIENT
-DO NOT EXCEED
MAXIMUM
VOLTAGE
PEAK REVERSE
RATING.
= ISO
~,
~
:>
'"
a:
u
j
10
'"5
~
a:
---
_1- C- ~ ~
- -
Fig.3
- Typical
for RCA-
.,.
0
0,
.0,
G,
K
L
a
H
1.
MIN.
MAX.
0.69
0."
3.18
10.16
9.14
6.22
D,menston
to allow
5.59
25.40
lor
tubolauon
oneh 14.78 mm)
lead finishes
TERMIHAL
deformat.on
for
(optIOnal!.
from
free end of lead to
from
the pomt of
attachment to the body. Within the 0.188 Inch

{4.78 mm} dlrTlenslon.the diameter may vary to
for
ANODE
6.60
41.28
0.64
plOch or ~al
along
to be controlled
allow
Characteristic
IN445B.
12.7
Diameter
0.188
through
5.08
1.91
18.42
anywhere
within
Reverse
IN440B
7.11
MAX.
0.035
0.125
0.360 0.400
0.245 0.280
0.200
0.075
0.725
0.220 0.260
1.000 1.625
0.025
0.5
0.027
Dynamic
and irregularities.
lH440B,
lH441B,
lH442B,
DIAGRAM
Types
lH443B,
lH444B,
lH445B
DDJ]3LJD
Solid State
1N536 1N538 1N540

1N5371N5391N5471N1095
Division
Flanged-Case, Axial-Lead Types

Features:
Wide operating-temperature
range: -65 to +6SOC.
Stringent environmental and mechanical tests to insure

dependable performance in industrial and military
applications.
Peak reverse voltages from SO to 600 V.
Max. dc forward current = 2S0 mA at T A = 1S00C.
Hermetically sealed JEDEC 00-1 package.
RCA-1NS36, lNS37, lNS38, lNS39, lN540, lN547, and
lNl095 are hermetically sealed silicon rectifiers of the
diffused-junction type_ They are specifically designed for
use in power supplies of industrial and military equipment
capable of operating at dc forward currents up to 7S0
milliamperes and temperatures ranging from -6So to +16SoC.
These silicon rectifiers have peak reverse voltage ratings from
SO to 600 volts, and a maximum reverse current of S
RECTI FIER SERVICE, ABSOLUTE-MAXIMUM
RATINGS,
microamperes at rated peak reverse voltage and ambient

temperature of 2SoC.
These silicon rectifiers are designed to meet such stringent
environmental, mechanical, and life requirements of prime
importance in military applications as: (1) sturdy and
compact mount structure, (2) axial leads for flexibility of
circuit connections, (3) welded hermetic seals, and (4) special
temperature cycling tests to assure stable performance over
the entire operating temperature range.
for a Supply Frequency of 60 Hz:
lN536
lN537
lN538
lN539
lN540
lNl095
lN547
50
100
200
300
400
500
600
RMS SUPPLY VOLTAGE

For resistive or
inductive loads .................
35
70
140
210
280
350
420
OC REVERSE - (BLOCKING)
VOLTAGE ...................
50
100
200
300
400
500
400
750
750
750
750
750
750
750
mA
15
15
15
15
15
15
15
100
100
100
100
100
100
100
.......
FORWARO CURRENT':
DC. for resistive or inductive loads:
T A = 500C ...................
SURGE. one cVcle
OPERATING
FREQUENCy
TEMPERATURE
Operating
. . . . . . .. . . . . . . . . .
........
RANGE (Ambient!:
......................
Storage ........................
-For maximum
A
kHz
de forward current values at ambient temperatures
-65 to +165
-65 to +175
other than those specified, see Rating Chart, Fig. 1.
c
c
1N536
1N537
1N538
1N539
1N540
1N547
1N1095
1.1
1.1
1.1
1.1
1.1
1.2
1.2
IlA
0.4
0.4
0.3
0.3
0.3
0.35
0.3
mA
Maximum Forward Voltage Drop

(DC) at a load current of
500 mA .........................
Maximum
Reverse Current (DC)
at maximum
Maximum
peak reverse voltage . .......
Reverse Current
(Averaged over 1 complete

cycle of supply voltage):
at maximum rated PRV,
T A = 150oC .........
. . . . .. . . . . . .
.. DO NOT EXCEED PEAK REVERSE

VOLTAGE RATING.
..~~ ,
UNCTION TEMPERATURE
("C)I'~OI
100
'"
w
w
5
"i
'~
" ,
~ I
I
2~
INCHES
MilLIMETERS
NOTES
SYMBOL
ob
bl
,,0
,,01
MIN.
MAX.
MIN.
MAX.
0.027
0.69
0.360
0.245
0.035
0.125
0.400
0.280
0.200
0.075
0.220
1.000
0.725
0.260
1.625
0.025
0.89
3.18
10.16
7.11
5.08
1.91
18.42
002
F
Gl
K
1
Q
1.
2.
9.14
6.22
5.59
25.40
to allow
for pinch
anywhere
along tuhulation
Diameter
to be controlled
within
0.188
attachment
6.60
41.28
0.64
12.7
0.5
Dimension
2
1
inch (4.78
or seal deformation
(optional).
from
free end of lead to
mm) from the point of
to the body.
Within
the 0.188
(4.78
mm) dimension,
the diameter
allow
for lead finishes
and irregularities.
inch
may vary to
----------------------------------
File No. 89
Rectifiers
DDJ]3LJD
1N1763A
1N1764A
Solid State
Division
RCA-1N1763A
and lN1764A are hermetically
sealed silicon rectifiers of the diffused-junction type, designed for use in power supplies of
color and black-and-white
television receivers,
radio recei vers, phonographs,
high-fidelity
amplifier systems, and other electronic equipment
for commercial and industrial applications.
RCA-1N1763A
and lN1764A supersede and are
unilaterally interchangeable with RCA-1N1763 and
lN1764, respectively.
The new rectifiers Incorporate all of the superior performance
and
reliability features which have gained industry
acceptance
for thei r RCA prototypes,
and, in
addition, offer substantially higher dc-outputcurrent capabilities,
lower reverse (leakage)
currents, lower forward voltage drop, and a wider
operating-temperature
range.
Both devices have dc forward-current ratings
of 1 ampere - resistive or inductive load, and
0.75 ampere - capacitive 'load at free-air temperatures up to 750C (natural convection cooling).
They can provide dc output currents of up to 2
amperes to capaci tive loads when attached to simple
heat sinks.
RCA-1N1763A has a peak-reverse-voltage rating
of 400 volts, and is intended for applications in
which the rectifier operates directly from an ac
power line supplying
up to 140 volts rms for
capacitive
loads, or up to 280 volts rms for
resistive or inductive loads.
RCA-1N1764A has a peak-reverse-voltage rating
of 500 volts, and is intended for applications in
which the rectifier
operates
from an ac line
through a step-up transformer supplying up to 175
volts rms for capacitive loads, orup to 350 volts
rms for resistive or inductive loads.
RCA-1N1763A
and lN1764A have an operatingtemperature range of -65C to +1350C. They utilize
the JEDEC 00-1 flanged-case, axial-lead package
which provides flexibility
of installation
in
both hand-wired
and printed-circuit
equipment
designs.
These new rectifiers, like their RCA
prototypes, are conservatively
rated and incorporate the following design features: (1) welded,
hermetically sealed case for protection against
moisture and contamination, (2) superior junction
characteristics made possible by a precisely controlled diffusion
process;
(3) extensive
and
rigorous quality-control procedures.
DIFFUSED-JUNCTION
SILICON RECTIFIERS
Flanged-Case Axial-Lead Types
In Commercial and Industrial
capabil ity:
high dc-output-current
a) with natural convection
I ampere - res ist ive or
inductive load
3/'4 ampere - capac it ive
load
b) with simple heat sinks:
2 amperes 1 to 1050e
capacitive load f
Tc
up to 2 amperes capacitive load
to 750e
TFA
low dc reverse (leakage) currents:

5 ~a max. at 250e; 100 ~a max. at 750e
low forward voltage drop:
1.2 volts max. at a dc forward
of I ampere
wide operating-temperature
-650e to +1350e
unilaterally
interchangeable
IHI763 and IH176'4
current
range:
with Types
PEAK REVERSE
Type
Type
IHI763A
IHI76~A
VOLTAGE.
500
400
RMS SUPPLY VOLTAGE:

For operation
with resistive
inductive
loads .....
For operation
with capacitive
or
loads
At free-Air
Temperatu.res
FORWARD
Up to
Above
75C
75C
volts
volts
At free-A ir
Temperatures
Up to
Above
75C
75C
CURRENT:
For operation
with
inductive
loads:
resistive
or
See fig.1
AVERAGE
(DC). .
0.75
See fig.1
0.75
PEAK RECURRENT.
35
TEMPERATURE
RANGE
Operating
Storage
max.
max.
See fig.1
35
max.
amp
max.
amp
max.
amp
max.
amp
See fig.1
(FREE-AIR):
-65
-65
to
to
+135
+150
-65
-65
to
to
+135
+150
c
c
Fig.2 - Repetitive Surge Current Rating Chart for

RCA-1N1763A and 1N1764A
File No. 89
1N1763A.1N1764A
Maximum
DC Reverse
At a Peak
At a Peak
Current;
Reverse
Voltage
Reverse
Voltage
of 400
of 500
I-'a
I-'a
volts
volts
C h a ract e r is tic s, at a Ji'ree-A ir !Femperature

Maximum
DC
At a Peak
At a Peak
Typical
Reverse
Voltage
Reverse
Voltage
Performance
of
7jOe:
Current:
Reverse
of 400
of 500
Characteristics,
O. I
volts
at
a Free-Air
Temperature
of
2jOe:
Type
INI763A
Rectifier
Service:
Half-Wave
RMS Su pp Iy Voltage.
(C) .
Fi Iter-Input
Capacitor
Surge-Limiting
Resistance#..
DC Ou tpu t Voltage
at In pu t
(Approx.):
to Filter
of 375 ma.
At half-load current
of 750 ma.
At full-load current
(Approx.) :
Voltage
Regulation
to full-load current.
Half-load current
Half-Wave
Voltage-Doubler
R~IS Supply Voltage.
Fi Iter-Input
Surge-Limiting
Capacitor
Resistance
Full-Wave
Voltage-Doubler
mls Supply Voltage.
In pu t
Surge-Limiting
(C).
#
The
value
transformer
shown.
(C).
Capacitor
Resistancefl..
series
117
100
5.6
117
200
5.6
117
350
5.6
150
100
6.8
ISO
200
6.8
ISO
350
6.8
140
125
145
130
150
140
180
155
185
160
190
170
volts
15
15
10
25
25
20
volts
117
100
5.6
117
200
5.6
117
3SO
5.6
ISO
100
6.8
ISO
200
6.8
150
350
6.8
volts
255
225
265
240
275
255
325
285
340
305
350
325
volts
30
25
20
40
35
25
volts
117
100
5.6
117
200
5.6
117
350
5.6
150
100
6.8
ISO
200
6.8
ISO
350
6.8
volts
275
250
280
260
290
275
350
320
355
330
365
345
volts
25
20
15
30
25
20
volts
volts
I-'f
ohms
volts
I-'F
ohms
volts
Service:
DC Output Voltage at In pu t
(Approx.):
to Filter
At half-load current
of 375 ma.
At full-load current
of 750 ma.
Voltage Regulation
(Approx.):
Half-load current
#
Type
INI764A
Service:
DC Output Voltage
at In pu t
to Filter
(Approx.) :
At half -load current
of 375 ma.
At fu II-load current
of 750 ma.
Voltage
Regulation
(Approx.):
Half-load current
Filter
ma
ma
0.1
volts
resistance
or
other
resistance
in
the
rectifier
supply
circuit
may be
deducted
I-'F
ohms
volts
from
the
1'Ji;l\ln
~
~~
I _I\IR 1<."" -
~
:;~INI7641\
~ ,
a:
'" ,
~ .
W
W
e~
2~
(TFA)=25C
a:
~~
~~
~~
<
20
a:
30
10
~176t
INI764A
I I
I;;
7-
15
0.5
I
1.5
2
INSTANTANE.OUS fORWARD
2.5
VOLTS ("'F)
92CS-9730R3
Fig.3
- Typical
istics
Dynamic Reverse Current CharacterforRCA-1N1763A

and 1N1764A.
Fig.4
- Typical
acteristics
Forward Voltage and Current Charfor RCA-1N1763A and 1N1764A.
o
a:
a:W
00
"-"
>- ..
12.5Z
l:!>
a:>-
"
u"
o Wo.
~q
7.5
~U)
o.w
",5
,,0.
5 "''''
><"
"'"
2.5
o
-75
-so
-25
0
25
CASE TEMPERATURE
50
(TC)-OC
75
100
125
ISO
Fig.5 -Forward-Current
Capabilities
ofRCA-1N1763A
and 1N1764A for Operation
with Heat Sink at
Case Temperatures from -65C to +1350C.
o
~5
-~
-25
FREE-AIR
a) 3" x 3" Heat Sink.

Figs.6a
and 6b -Forward-Current
Capabilities
25
TEMPERATURE
100
125
150
(TFA)-OC
b) 2-1/2" x 2-1/2" Heat Sink.

of RCA-1N1763A and 1N1764A for
Operation
with Heat Sinks.
'~
"
o
'"
......
~!:1.5
"",
"'",
:.,.
~~
::>"
'"
"'"
)(
0.5
-75
Figs .6c,
-50
-25
FREE-AIR
0
25
50
75
TEMPERATURE (TFA}-OC
6d, and 6e - Forward-Current
tOO
125
ISO
-75
-50
-25
FREE-AIR
0
25
50
75
TEMPERATURE (TFA)-OC
100
e) 1" x 1" Heat Sink.

Capabi 1 i ties of RCA-1N1763A and 1N1764A for Operat ion wi thHeat
TINNERMAN
SPEED CLlP'*
OR
EQUII/ALENT
SILICONE
Registered
Trade
Mark,
Tinnennan
125
HEAT SINK
GREASE
Products,
Inc.,
SILICONE
Cleveland
I,
GREASE
Ohio.
Fif!o 7 - SUf!f!ested Methods for Attachinf!

IN1764A to Heat Sink
RCA-IN1763A
150
Sinks.
IFREE-AIR
TEMPERATURE (TFA)=25
ISUPPLY FREQUENCY (CPS)=60
-.
S.b
TYPE
INJ7bJA
IN~C
117
~gLTS
~AGE
C
~:._
--
_._::J~'
-r- S~LTfUT
1iiE';'.::E:':-:F.::'?:;:,::n;::::;:-::,
-: ..
=:-~
_._.
fEE'E:iiF-=--'-f:3'-=-~ _ .. ,,0: --: ... _ .. __-::: ...~ .::-' :~.. :::

-
~:: -
:;--~
:.1.1...::-
~; :::g :
0
N
~=
..
,- ==:::::: .._.u
~,;:: .-
: ._:~
'-._~"
_ ....
_.:
-- .-::::
:::: ::::
-:::. w
:::,:'
~=~~=.. ... __...."
~r.:-:':;:::F::
[:.:...
.__
:= .._..
0:"
,-'_:
-= ::
~..;;
:: .::::--- f
' --- ....- ~
~ "
:::
::::
.....
'J .__
..
--~
g~~:
.
-:::~-:~g
..
...
~: ~
i::'t;:::::.- _
.._---.:=,.
" .. ::
==::: _...
::::::.::
'"
"
.. ::: _. :::.~::.=
N~
::.:
~t~
..
j:'
:::i'=r.::
~"":
...~--
.. -_. :::-:-~~
~- ." .-,..S' _.... __;:=F~i;:E~=E:-.::~~
Fig.8
.,-- :::-:..
= ._ :__
~ ..
_:...
. _I. :
EJ.:?: ._.... ::
~:
-::-:
- Typical Operation Characteristics

forRG41N1763A in Half-Wave Rectifier
Service.
.....
~:
IEEF~ ....... ...

f;EE- :r:::_
~: f',J .. ....
. ::"..
Fig.9
:if. ::~::
- Typical Operat ion Characteristics

for RG41N1764A in Half-Wave Rectifier
Service.
2
DC OUTPUT
VOLTS
DC OU T PUT VOLTS
Fig.l0 - Typical Operation

Characteristics
ofRCAlN1763A in Half-Wave Voltage-Doubler
Service.
INCHES
Fig.ll
- Typical Operation
Characteristics
lN1764A in Full-Wave Voltage-Doubler
MilLIMETERS
SYMBOL
NOTES
MIN.
,b
b,
,0
,0,
,02
F
G,
K
L
a
H
1.
MAX.
0.027 0.035
0.125
0.360 0.400
MIN.
MAX.
0.69
0.89
3.18
10.16
7.11
5.08
1.91
0.245
9.14
6.22
0.280
- 0.200
0.075
0.725
0.220 0.260
1.000 1.625
- 0.025
05
5.59
25.40
18.42
6.60
41.28
0.64
12.7
Dimension to allow for pinch or seal deformation

anywhere along tubulation (optional).
Diameter to be controlled from free end of lead to
attachment to the body. Within the 0.188 inch
(4.78 mm) dimemion. the diameter may vary to
ofRCAService.
Rectifiers
[Kl(]5LJ[J
1N2859A
1N2860A
1N2861A
Solid State
Division
1N2862A
1N2863A
1N2864A
RCA-1N28S8A,
lN2859A,
lN2860A,
lN2861A,
lN2862A, lN2863A, and lN2864A are hermetically
sealed silicon rectifiers of the diffused-junction
type, designed for use in a variety of applications in industrial
and commercial
electronic
equipment.
DIFFUSED-JUNCTION
SILICON RECTIFIERS
RCA-1N2858A through lN2864A supersede and are

unilaterally
interchangeable
with RCA-1N2858
through lN2864, respectively.
The new rectifiers
incorporate all of the superior performance and
reliability features which have gained industry
acceptance for their RCA prototypes, and, in addition, offer substantially higher dc output-current capabilities,
lower reverse
(leakage)
currents, and a wider operating-temperature
range.
Flanged-Case
Axial-Lead Types For
General-Purpose Applications
In Industrial And Commercial
All seven of these new rectifier types have

maximum dc-forward-current
ratings of 1 ampere
for resistive or inductive 10ads and 0.75 ampere
for capacitive loads at free-air temperatures up
to 750C (natural convection cooling).
They are
also capable of providing dc output currents of
up to 2 amperes with capacitive loads when attached to simple heat sinks.
RCA-1N2858A
through lN2864A differ only in
peak-reverse-voltage
ratings (see Maximum Ratings
chart). They are rated for operation at free-air
temperatures
from _650 to +135C, and utilize
the JEDEC 00-1 flange-type, axial-lead rectifier
package which provides flexibi lity of installation
in both hand-wired and printed-circuit equipment
designs.
These new rectifiers, like their RCA prototypes, are conservatively
rated, and incorporate
the following design features and special tests
which contribute to their outstanding performance
and reliability:
(1) junctions of extremely high
uniformity produced by a special, precisely controlled diffusion process, (2) rugged internal
mount structure, (3) hermetically sealed cases,
(4) prolonged treatment at high temperatures to
stabilize characteristics,
(5) pressure tests of
seals for protection
against moisture and contamination,
(6) tests for forward and reverse
characteristics at 250C, and (7) high-temperature
dynamic tests under full-load conditions.
Features:
high dc-output-current
capabil ity:
1 ampere - res ist ive or } to 7Soe
inductive load
with natural
3N ampere - capac i t i ve convect ion
load
cooling
to losoe
up ~0.2 amperes -capawith simple
[ heat sinks
cltlve load
low dynamic reverse current:
0.1 ma max. at sooe
0.3 ma max. at 7Soe
low dc forward voltage drop:
1.2 volts max. at 2Soe with
dc forward current
wide operating-temperature
-6So to +13Soe
hermetically
sealed
JEOEe
unilaterally
interchangeable
IN28S8 through IN286~
I ampere
range:
00-1
package
with Types
specially processed and tested for high

reI iabi I ity and stabi I ity of characteristics
1N2858A-1
File No. 91
N2864A
RECTIFIER
Absol ute-Maximum
Rati ngs,
SERVICE
a SuppLy Frequency of 60 cps:
for
IN2858A
I N2859A
IN2860A
50
100
200
35
17
70
35
50
100
I N2861 A IN2862A
IN2863A
I N286'1A
300
400
500
600
max.
140
210
280
140
420
210
vol ts
105
350
175
max.
70
max.
volts
200
300
400
500
600
max.
volts
volts
R'>lS SUPPLY VOLTAGE:

For
resistive
or
For capacitive
loads.
inductive
loads.
OC REVERSE (BLOCKING) VOLTAGE

FORWARDQJRRENT:
For
resistive
r
or
inductive
loads:
up to 75C.
t
AVERAGE(OC) At TFA
TFA above 75C.
For
capaci
{At TFA up to 75C.

AVERAGE(OC) At TFA above 75C.
"turn-anll
2 milliseconds
transient
SURGE, repetitive,
For
cycle
more
than
at
of
TFA
supply
one
35
35
35
40
40
40
of
at
IF
Maximum
35
35
40
See fig.2
0(
Operating
Maximum
max.
amp
max.
amp
35
max.
amp
max.
amp
0.75
See fig.1
0(
TEMPERATURERA.NGE(FREE-AIR)
Character
0.75
35
25C:
suppl y vol tage.
Storage
I 0.75
of
voltage
eye Ie
0.75
See Fip.1
See fig.1
duration:
At TFA up to 75C.
At TFA above 75C.
For one
0.75
fAt
SURGE, for
0.75
0.75
TFA up to 75C.
(At TFA above 75C.
PEAK
amp
See fig.1
ti ve loads:
RECURRENT
max.
40
40
40
-65 to + 135
0(
-65 to + 150
i s tics:
forward
1 Ampere,
Dynamic
(Averaged
Voltage
over
Drop
TFA
Reverse
I N2859A
I N2860A
I N2861 A IN2862A
1.2
1.2
1.2
1.2
IN2863A
IN286'1A
25C.
1.2
1.2
1.2
0.1
0.3
vol ts
Current
1 Complete
of Supply Voltage):
Rated PRV:
IN2858A
(IX:)
at
Cycle
Maximum
TFA = 50C
TFA = 75C
0.1
0.1
0.1
0.1
0.1
0.1
0.3
0.3
0.3
0.3
0.3
0.3
ma
ma
40
-"'"'
35\
'"ffi
30
'"
25
'"
Q.
'"'"
'"
20\
cr
iil
15
~
x
10
'"
"""
I'
........
r-.
92C513081
Fig.2
- Repetitive
Surge Current Rating
RCA-lN2858A through lN2864A.
DC FORWARD AMPERES = I
. 00 NOT EXCEED MAXIt.4UM PEAKREVERSE ~OLTA~[ R~T1NGI.
,'----
LL
'"w
'"
~
u
~
w
:5'"
~
'"
for
100
Chart
FREE-AIR TEMPERATURE (Oel
75
I---- 'N28b41'
p--
10
j59A
IN28bOJ' IN2BbiA
IN2Bb2A IN28b3A IN2864A
'fFREE AIR TEMPERATUREfoe =25
0.1
I
Q2CS-I0417RI
Fig.3
- Typical DynamicReverse
RCA-1N2858A through
Characteristics
lN2864A.
for
o
-75
o.~
I
l.~
2
2.5
INSTANTANEOUS FORWARD VOLTS I"'F)
92CS-973OR3
Fig.4 - Typical Forward Voltage and Current Characteristic

for RCA-1N2858A through lN2864A.
-50
-25
0
25
CASE TEMPERATURE
50
75
(TC)-OC
100
125
150
Fig.5 - Forward-Current
Capab il i ties of RCA-n~858A
through lN2864A forOperation
with Heat Sink
at Case Temperatures
from -650C to +1350C.
..-'
12.5~~
"-0
ZW
10
w>
IE"
co'-'
'-'"
7.5 ~~
~~
"
wu>
Q.W
",:5
=>Q.
"''''
"'"
25)(4
o
-75
o
-75
-50
-25
FREE-AIR
a
25
50
75
-50
-25
FREE-AIR
100
125
a
25
50
75
100
150
LOAD: CAPACITIVE, RESISTIVE, OR INDUCTIVE

SUPPLY FREQUENCY (CPS)=60
HEAT SINK: ALUMINUM 1/16" THICK, 1-1/2" X 1-1/2"
o
a:
~
o
......
~t!
1.5
"'u>
a:w
wa:
~~
",,,,
=>'"
~
0,5
'"
'"
o
-75
-50
-25
FREE-AIR
a
25
50
75
TEMPERATURE (TFA)-'-C
100
125
150
Figs.6a, 6b, 6c, 6d, and 6e -Forward-Current Capabilities of RG4-1~2858A

for Operation with Heat Sinks.
through iN2864A
T1NNERMAN
SPEED CLlP*
OR
EQUIVALENT
/
Fig. 7 - Suggested Methods for Attaching
RCA-1N2858A
through lN2864A to Heat Sink.
DIMENSIONAL OUTLINE (JEDEC-DO-J)

FOR RCA-IN2858A through JN28~A
,..,
INCHES
MILLIMETERS
SYMBOL
NOTES
MIN.
0.027
9.14
10.16
0.280
6.22
7.11
0.360
0.245
0.725
0.220
0.260
5.59
25.40
0.075
'.000
1.625
0.025
0.5
Dimension
for
pinch
along
Diameter
to be controlled
within
0.188
tubulation
inch
1.91
6.60
41.28
0.64
12.7
anywhere
anachment
5.08
18.42
to allow
MAX.
0.200
1.
0.400
0.125
2.
3.18
0.69
G,
K
MIN.
0.035
,0
,0,
,0,
0.89
MAX.
(4.78
mm)
dimension,
allow
for lead finishes
free end of lead to
mmllrom
to the body.
(4.78
or seal deformation
(optional).
from
Within
the point
the 0.188
the diameter
may
and irrt9U1aritiM.
01
inch
vary to
ffilrnLJD
Rectifiers
1N5211
1N5212
Solid State
Division
RCA-IN5211,
IN5212, IN5213, IN5214, IN5215,
IN5216, IN5217, and IN5218* are hermetically sealed
silicon rectifiers of the diffused-junction type utilizing
small cylindrical metal cases and axial leads.
Types
IN5215, IN5216, IN5217, and IN5218 are insulated
versions of types IN5211, IN5212, IN5213, and IN5214,
respectively.
These rectifiers feature dc forward current ratings of up to 1 A, a surge-current rating of 50A,
low forward voltage drop, low leakage currents, and an
range of -650C to + 175C.
e cylindrical
design
with
axial
leads
far simple
(0.405"
hermetically
sealed
metal
max.
0.240"
max.
etypes
lNS21S
length;
through
dielectric-strength
Maximum
Ratings,
lNS218
plastic
have
sleeve
Absolute-Maximum
For Industrial and

ConsumerProduct
Applications
handling
e high
maximum
DC at 7SoC
PEAK REVERSE
VOLTAGE
VOLTAGE
...
......
ratings
IN5215
through
IN5214
IN5218
up to 1 ampere
case
transparent,
high-
over
case
metal
Values:
INS211
INS21S
INS212
INS216
200
400
140
280
or inductive
load
INS213
INS217
INS214
INS218
1NS211
INS21S
INS212
INS216
INS213
lNS217
INS214
INS218
600
800
200
400
600
800
max.
420
560
70
140
210
280
max.
0.75
0.75
6
0.75
6
0.75
6
0.6
5
max.
max.
A
A
50
50
50
50
max.
FORWARD CURRENT:
For ambient temperatures up to
75C. For ambient temperatures
above 75C, see Rating Chart.
DC ...............
PEAK RECURRENT
...
SURGE - For "turn-ann- time
of 2 milliseconds
........
AMBIENT-TEMPERATURE
Operating ............
Storage ..................
forward-current
IN5211
through
dia.)
For res istive
RMS SUPPLY
1N5216
1N5217
1N5218
SILICON
RECTIFIERS
and installatian
ecampact,
1N5213
1N5214
1N5215
For capacitor-input
{ilter
RANGE:
c
c
435 to +175
435 to +175
LEAD TEMPERATURE:
For 10 seconds maximum
255
Characteri stic s:
Maximum Instantaneous
Forward
Voltage Drop at dc forwarg current
of 1 ampere and TA.s;. 75 C .
Maximum Reverse Current:
Dynamic, at TA = 750C** .....
Static, at TA = 25OC***
..... .
max.
INS211
INS21S
INS212
INS216
INS213
INS217
INS214
INS218
1.2
1.2
1.2
1.2
max.
0.2
0.005
0.2
0.005
0.2
0.005
0.2
0.005
max.
max .
mA
mA
104~
I WIOO.
C>
108
6
00:
0:"
;< "''''
~ ~ 80
"-i:'
~
"u~~
0:
~
~
'""
~
"-'"
00:
40
108
6
(J
'"
,,;-"'1-
","",
:,v
;)'
'">-
"'0:
w" 20
'V
zz
ww
uo:
Q.
'
0:
60
~~
t- t-
102
e
6
I~
4
I
I
0.1
Fig.2
- Typical
Forward
lN5211
DO NOT
EXCEED
MAXIMUM
PEAK-REVERSE-VOLTAGE
RATING.
SOLID-LINE
CURVES: DYNAMIC CHARACTERISTICS
MEASURED
AT AMBIENT
TEMPERATURE::
75 C AND AT
MAXIMUM
DC FORWARD-CURRENT
RATING
DASHED-LINE
MEASURED
CURVES: STATIC CHARACTERISTICS

TEMPERATURE
:E 25
AT AMBIENT
100
8
6
-z,"
\~
\~
~\~~2\6
...-"'-
~1l'l5~ri=="P
~
IN5214
IN5218
...-...-1-10
8
6
'"::i
~
0:
If:::
81-
I-
~ ;-.,,<z:J>"
l'l~~-z,,---
.,'(ll~~Il;~
\l:!.~.l\~,=
1l'l~2
\l'l~.l\4
'N~218
~'\.~~~
0.1
Fig.3
- Typical
Reverse
lN5211
Characteristics
through
lN5218.
for Types
Characteristics
through
lN5218
for Types
.
DIMENSIONAL
for Types
1N5211,
OUTLINE
lN5212,
DIMENSIONAL
lN5213,
lN5214
for Types
lN5215,
OUTLINE
lN5216,
lN5217,
1.4"
MIN.
1.4"
MIN.
i
-t
POLARITY
SYMBOL
(NOTE 2)
-+
METAL CASE
WITH
INSULATING
SLEEVE
(NOTE 3)
1.4"
r-MA"x40~"A
~240'
MAX.OIA.
GLASS
_
INSULATION
GLASS
INSULATION
MIN.
ANODE
LEAD
.033- .039" DIA .
.033-.039"OIA.
'
POLARITY
SYMBOL
(NOTE 2)
1.4"
MIN.
ANODE
LEAD
lN5218
- G -
NOTE
1: CONNECTED
NOTE
2:
92CS-
TO METAL
ARROW
INDICATES
(EASY)
CURRENT
DC AMMETER.
14457
CASE.
DIRECTION
FLOW
AS
Insulating
OF
FORWARD
INDICATED
BY
TERMINAL
for Types
O32C5-
Sleeve Dielectric
NOTE
1:
CONNECTED
NOTE
2:
ARROW
INDICATES
(EASY)
CURRENT
DC AMMETER.
NOTE
3:
INSULATING
YOND ENDS
DIAGRAM
1N5211 through
CATHODE,CASE
lN521B
Strength:
TO METAL
SLEEVE
OF CASE.
14456
2000 Volts
Minimum
CASE.
DIRECTION
FLOW
AS
MAY
OF
FORWARD
INDICATED
BY
EXTEND
1/16"
BE-
1.5-A,50-1000-V
Silicon Rectifiers
Plastic-Packaged, General-Purpose
Types for Low-Power Applications
High surge-current capability
Low junction-to-Iead
0
- -65 to + 170
thermal impedances
operating temperature
RCA-l N5391--1 N5399, inclusive, are diffused-junction type

silicon rectifiers in an axial-lead plastic package. These devices differ only in their voltage ratings.
Their small size and plastic package of high insulation resis

tance make these rectifiers especially suitable for those applications in which high packaging densities are employed.
Oi
REPETITIVE
NON-REPETITIVE
WORKING
PEAK'"
PEAK'"
DC BLOCKING
(At TA
= '50C)
RMS
FORWARD
'"
:g
...
1!l
'"
III
III
III
III
III
III
'"
III
III
PEAK-
range
'"
~
- - - - III
VRRM
VRSM
VRWM
50
100
200
300
400
500
600
800
,000
100
200
300
400
525
650
800
1000
1200
50
100
200
300
400
500
&Xl
800
1000
VR
50
100
200
300
400
500
600
800
1000
VR(RMS)
35
70
140
210
280
350
420
560
700
CURRENT:
Single-phase, half-wave operation with SO-Hz sinusoidal voltage

and resistive load, and 1/2-inch leads; for other lead lengths,
see Fig. 1. T A = 70C
PEAK SURGE ..
For one-half cycle of applied voltage,
45
50 Hz (10 ms)
"60 Hz (8.3 ms)
400Hz
(1.25msl.
50
,00
= 70C
See Fig. 4.
Storage
Operating
"LEAD
.
.
TEMPERATURE
Measured
..............
. -65
to +175
-65
to +170
(During Soldering):
1/8 inch from case for 10 s max.
For single-phase, half-wave sinusoidal pulse of 100-1-5 duration with a repetition rate of 60 pulses per second .
.. for one single-phase, half-wave, GO-Hz sinusoidal pulse with this peak value .
.. Maximum input~voltage rating that can be continuously
applied (with the maximum current rating) over the normal operating
temperature range I. For single-phase, half-wave operation with a GO-Hz sinusoidal supply and a resistive load.
In accordance with JEDEC
registration
format
JS-1 RDF-3.
LIMITS
CHARACTERISTIC
SYMBOL
Min.
All Types
Typ.
UNITS
Max.
Reverse Current:
*Static
For VR = rated value & TJ = 25C

For VR= rated value & TJ = 1500e
IR
0.001
0.100
0.01*
0.3*
mA
*Oynamic
Full'cycle average, for VRWM = rated

value, 10 = 1.5A, T A = 70C
IR(AV)
0.080
0.3*
mA
*Instantaneous
Forward-Voltage
Drop:
At iF = 1.5A, TA = 70oe, see Fig. 3.
vF
1.1
1.4*
trr
1.5
JJS
JLa
JLk
-
CN/
100
100
148
148
J-HS(t)
10
Reverse-Recovery
Time:
At 'FM=30A,pulseduration
=3.1IJ.S, TA = 250e
(See Fig. 7; for other conditions,
see Fig. 8.)
*Thermallmpedance:
Steady-State
J unction-to-anode-Iead
J u nct io n-to-cathode-I
Anode-Lead
Cathode.Lead
ead
..
Free convection
cooling
CN//in
Transient
Heat-sink mounting with o-to-1 Y-," leads, and

with a pulse duration of 0.6 s.
For other pulse durations, see Fig. 6.
CN/
1--1
I-FF~lO~A~D!' R~E~SI~ST0'V,!E'"-:::=:-R=Ftmp:r===m==q:j
CIRCUI,.'SINGlE-PHASE
--j I
1 r:-:c(
1.5
VRWM - MAX.
RATING
=Ff
"
!j
E
'"
~
u
("
1.0
:5
it
INFINITE
HEAT
SINK
*.~".
Y ~
'So
~~
Fig. 1 - Averageforward-eurrent
derating curves for types
1N5391--1N5399 for several lead lengths.
fi'
""
/+?...
'~"
0.5
92C5-17311
Fig. 2 - Variation
of peak forward-power
dissipation with
peak forward current.
Fig. 3 - Peak forward-voltage drop vs. peak forward current

for types 1N5391-1N5399.
6810
SURGE-CURRENT
100
DURATION
HALF
CYCLES
92C5-17306
Fig. 4 - Peak-surge (non-repetitive)
forward current vs. surge-
current duration for types 1N5391-1
-oj
100
r-.,
I,I~~
"~"~rrr11.1/2"
...,
:> ~
~~
0<-
:>x
0:;1;
BOARD
'"'"
~~
.... "
z,
~~
1 -?-\~'f
314"
,,~
~ ~ to
,~
'._" ~
II
~
~ 1
~~
INFINITE
HEAT SINK
~-1
PC
N5399.
""Zz
0<0
~B
,,"'
1/4"
f--
i1!r-
--j1
~=
INFINITE
HEAT SINK
~
0.1
I II
III
92C5-17310
Fig. 5 - Variation of steady-state thermal resistance with lead

length (for different mounting methods) for types 1N5391-1N5399_
Fig. 6 - Variation of transient thermal impedance with pulse

duration for several lead lengths for types 1N5391--1N5399.
,"IL
T'"oC'
1------~IO"lo
~-3.I~S-----lt-T
.U
-~
20~
'":>....
~trr~
><r
+1~
RECT. UNDER TEST
-L~
~R~REC)~
"'-..,
fr.-tee
""
'"
>
10
8
~
~
OSCILLOSCOPE
DISPLAY ON
TEKTRONIX TYPE 541-A (WITH
TYPE "s" PLUG-IN
UNIT 1
<r
..!:.:.o
~(
"'"
"-
I
0.1
RATIO
0.2
OF REVERSE
0.4
CURRENT
0.6 0.8
TO FORWARD
2
CURRENT
8 10
[IRMIREC)/IFM]
92C5-17307
Fig. 7 - Oscilloscope display & test circuit
Fig. 8 . Variation of reverse-recovery time with ratio of re-
for measurement
of reverse-recovery time.
verse-to-forward current for types IN5391--1N5399.
""G
.
1,
MilLIMETERS
INCHES
SYMBOL
MIN.
MAX .
MIN.
MAX.
0.027
0.035
0.686
0.889
0.104
0.140
2.64
3.56
0.230
0.300
5.84
7.62
1.000
25.40
0.050
1.27
OOC05L}O
Solid State
Division
1-A, 50-to-1000-Y
Silicon Rectifiers
Plastic-Packaged, General-Purpose
Types for Low-Power Applications
seriest
ReA D1201
small
size and plastic
MAXIMUM
REVERSE
RATINGS,
package.
package
type silicon
of high insulation
Absolute-Maximum
PEAK'
VRSM
VRWM
DC BLOCKING
VR
RMS
VR(RMS)
PEAK'"
impedances
temperature
tance
make
cations
range
these
in which
rectifiers
especially
high packing
' 01201A
(44002)'
012018
(44003"
lOa
200
100
150
50
50
lOa
lOa
35
70
--
'012010
144004"
600
800
1000
300
525
800
1000
1200
200
400
600
800
1000
200
400
600
800
1000
140
280
420
560
700
All Types
Single-phase, half-wave operation with 60-Hz sinusoidal

voltage and resistive load; with '" leads.
TA
10
=
75C
For other lead lengths
See Fig.
(NON-REPETITIVE):
IFSM
For one-half cvcle of applied voltage.
50 Hz (10 ms)
28
60 Hz (8.3 ms)
30
60
400 Hz (1.25 ms)

For other durations
With l-inch
Storage
See Fig. 3
RANGE:
leads & infinite-heat-sink
mounting
(both leads):
& Operating.
LEAD TEMPERATURE
(During
Soldering):
Measured 3/8 in. (9.52 mml from case for 10 s max. Number
in parentheses
, For single-phase.
half-wave
is a former
sinusoidal
a repetition
rate of 60 pulses per second.
For
single-phase,
one
peak value.
appli-
01201P
(44007)'
400
CURRENT:
TEMPERATURE
for those
are desirable.
01201N
(44006"
01201M
(44005)'
AVERAGE-RECTIFIED:
PEAK-SURGE
suited
densities
resis-
50
WORKING
thermal
Values:
I 01201F
(44001)'
NON-REPETITIVE
PEAK
FORWARD
-65 to +1750C operating
These devices differ
VOLTAGE:
REPETITIVE
Low junction-to-Iead
devices are diffused-junction
rectifiers in an axial-lead plastic

only in their voltage ratings.
Their
half-wave,
ReA
type
pulse of 10Q-/Js duration
50-Hz
number.
.Maximum
and
maximum
input
voltage
current
sinusoidal
pulse with
this
supply
and a resistive
that
rating)
range. For single-phase,
can be continuously
over
half-wave
the
load .
Measured on anode or cathode
normal
operation
lead.
applied
(with
the
with
a 60-Hz
sinusoidal
LIMITS
SYMBOL
CHARACTERISTIC
All Types
UNITS
Min.
Typ.
Max.
0.01
0.05
mA
0.03
mA
vF
0.95
1.1
trr
1.5
See Fig. 7
IlS
Reverse Current:
Static
For V R = rated value & TJ = 25C ...............................
- ..............
For V R = rated value & TJ = 100C ..............
IR
Dynamic
Full-cycle average, for VRWM = rated value,
10
'R(AV)
= 1 A, TA = 750C .......
Instantaneous Forward-Voltage Drop:

At iF = 1 A, TJ = 25C, see Fig. 2 ................................
Reverse-Recovery Time:
At IFSM = 30 A, pulse duration = 3.1 IlS, T A = 25C, see Fig. 6 .........
For other conditions ..........................................
hermal Impedance (Junction-to-Heat Sink):
Steady-State
()J-HS(t)
Heat-sink mounting with 1-inch leads. For other mounting methods

and other lead lengths, see Fig. 4 . . ...................
- ..........
50
7.5
C/W
55
Transient
()J-HS(t)
Heat-sink mounting with 0 to 1" leads, and with a pulse duration of

0.3 s. For other pulse durations, see Fig. 5 .. ......................
~?:J'UI~~~:~~~~~
PEAK-R~VERSE
(VRW",I-
I~
..J
1.0
0.8
'"
'"
~
'"
'"~ 0.2
~
..
..
0.6
..0.4
PHASE
WORKING
"'AX. RATING
VOLTAGE
-1
~
~
t'--1 r-
C/W
,..!!.~b~
....
INFINITE
HEAT SINK
>
2:
-~
Q.
'"
'""
'~
~
'"~
'"
~
0
"
AMBIENT
TEMPERATURE
(TAl'" 2SoC (MAXIMUM)
2SC
,"Oc
........
(TYPICAL)
(TYPICAL,\
""'.
~
I
1/,
CURRENT
WAVEFORM
O~FSM
U-ICYCLE
r-
\%
~~~
INFINITE
HEAT (l:INK
~'TE
HEAT
'~g
--IFSM
I _
:30~
IRM(REC)
~ r--31~'--l t-T
I
trr...-
10%
AMBIENT
TEMPERATURE
SINK
~~O
0 ~
25<>C
---.L1FSM
40
~
...:> 20~
:~.l
l---
'-....
....
rr
""'-
>-
...>'"
(TA):
60
lr-1
r- ~~
'------"
1
10
OSCILLOSCOPE
DISPLAY ON
TEKTRONIX TYPE 541 A (WITH
TYPE "S"
PLUG-IN
UNIT)
6
~A/.
~
~
~(
""'"
2
0.1
RATIO
0.2
0.4
0.6 0.8 I
OF REVERSE-lO-FORWARD
CURRENT
8 10
[IRM(RECI/1FSM]
92CS-I1249Rl
INCHES
MILLIMETERS
SYMBOL
NOTES
MIN.
MAX.
MIN.
MAX.
0.030
0.034
0.762
0.863
<pD
0.133
0.137
3.378
3.479
0.280
0.285
7.112
7.239
1.000
25.40
0.050
1.27
<pB
L1
NOTES
1. Package
contour
Slugs, if any,
the minimum
2.
optional
within
shall be included
limit of o
Lead diameter
not controlled
build-up. and minor irregularities
cylinder
within
of
diameter,
this cylinder
in this zone to
other than slugs.
<PO,
and
length,
G.
but shall not be subject to
allow
for
flash,
lead-finish
These silicon rectifiers

are intended
for use in
generator-type
power supplies for mobile equipment;
in
dc-to-dc converters, power supplies for de motors, transmitters,
rf generators,
welding equipment,
and electroplating
systems;
in dc-blocking
service, magnetic
amplifiers,
and in a wide variety of other applications
in industrial equipment.
HALF.WAVE RECTIFIER
SERVICE
Absolute-Maximum
Ratings for Supply Frequency of 60 cps,
Single-Phase
Operat ion, and wi th
Resistive
or Inductive
Load
PEAK REVERSE
VOLTS.
TRANS I EJVf REVERSE VOLTS.
NCX'I-REPETI TIVE (5 -msec
Available
in reverse-polarity
INI3~IRB, JNI3~2RB, INI3~~RB,
IN J3~7RB, IN 13~8RB
max. duration
and case
temperature
range
of
0 to 2000
C.
100
200
350
450
600
700
800
R\lS SUPPLY VOLTS
35
70
140
212
284
355
424
DC RLOCKING
VOLTS.
temperature
..
At ot.her
case
tempera tures
PEAK SURGE
AMPERES: a
One-half
cycle,
wave.
and Storage.
Max. Forward
b
Vol tage
Drop
..
Reverse
Currentb(Ma.
Dynami
Static
e ... . . )
a Superimposed
on device
operating
within
the maximum voltage,
current,
and temperature
ratings
and may be repeated
after
sufficient
time has elapsed
for the device
to return
b La the presurge
thermal-equi
librium
conditions.
/\vC'rage
value
for one complete
cycle
at case
temperature
of
IS00 C and at maximum rated
vol tage and average
forward
current.
C
l'C value,
pf'raturc
at
(oC)
Diffused-junction
process -- exceptional
formity and stability of characteristics
uni-
seals
Welded
construction
Low thermal
resistance
Low leakage
Low forward
voltage
JEDEC
drop
TYPE OF OPERATION: CASE TEMPERATURE:

A-DIRECT CURRENT
B -SINGLE PHASE
C - THREE PHASE
D -SIX PHASE
Character ist i cs:

(Volts).
and
RATING CHART
CASE- TEMPERATURE
RANGE: Operating
Max.
mechanical
current
DO-~ outl ine
High output current:

up to 15 amperes -- 6 rectifiers
in 3-phase,
full-wave bridae circuit
up to 12 amperes - ~ rectifiers
in singlephase full-wave bridge circuit
PEAK RECURREJVf
A\IPERES.
sine
Designed
to meet stringent
envi ronmental speci fications
Hermetic
AVERAGE FORWARD
AMPERES:
At 1500 Cease
versions:
INI3~5RB, INJ3~6RB,
maximum
= 25.
peak
reverse
voltage,
and
case
tem-
4-.."'""'~
DFOC
MICA
INSULATOR
=:~:~::;I~=llSHEO
C0
HEATSINK
{CHASSIS'!
DF3D
~~~.L;>~.;~~Tn~7:'~~Gm~~:~~G
c=====
{l.40mmIMAX
THICKNESS~O.055in.
.
V IL ... elEATPvILlSHEO
HAROWAREPRICE5
NA59B
H . ROW
~i~
INSULATOR
CONNECTOR~
.. TPUBLISHEO
..... 'l,. ..8U
....
IL .8LE
..REPRICES
...TI'V8lISHEO
H .. ROW ...REPRICES
@
~
S:::~OCK
NRI09A
:~~~:.O
WASHER
HEX.
NUT
shown with your ReA sates representative or supplier.
DIMENSIONAL OUTLINE
JEDEC 00.4
="~.l
r "i
424
.437"
.424"
NoSfl3.-/'
Polarity
symbol
1N13~18,
for
types
Polari
ty
symbol
for
types
1N13~28,
1N13~~8.
1N13~lR8.
1N13~2R8,
1N13~~R8.
1N13~58.
1N13~68.
and 1N13~88
1N13~78.
1N13~5R8.
1N13~6R8.
and 1N13~8R8
1N13~7R8.
Note
I:
Normal
inch-pounds
assembled
during
pounds.
installation
appl
on
stud
installation
ied
to
torque
a
10/32
should
not
thread.
The
is
UNF-28
appl
exceed
15
to
hex
ied
20
nut
torque
25
inch-
Note
max.,
Mote
undef
Note~:
2:
Diameter
0.163"
min.
3:
j
Angular
of
unthreaded
orientation
port
of
ion:
this
0.189"
terminal
ned.
Thedevice
may be operated
inany
position.
is
Rectifiers
ffil(]5LJD
1N1200A
1N1202A
1N1203A
Solid State
Division
1N1204A
1N1205A
1N1206A
Used in generator-type
power supplies
for
mobile
equipment;
in dc-to-dc
converters,
battery
chargers,
and machine-tool
controls;
in power
missile
supplies
equipment,
for
aircraft,
marine,
and
for
de motors,
trans-
mitters,
rf generators,
welding
equipment,
and
electroplating
systems;
in dc-blocking
service,
and in a wide variety
of other
applications
in military
and industrial
equipment.
HALF-WAVE RECTIFIER
SERVICE
Absolute-Maximum
Ratings for SuPPly frequency
60 cps, Single-Phase Operation, and with
Resistive or Inductive Load
of
PEAK REVERSE
VOLTS ...
TRANSIENT REVERSE VOLTS,
NON -REPETl TlVE (5-msec
max. duration
and case
tem-
~fr 0 ttUof"Z0030n E>

RMS SUPPLY VOLTS
IX: llLOCKING
VOLTS ....
AVERAGE FORWARD
AMPERES:
At 1500 Cease
temperature
.
At other
case
temperatures.
100
35
200
70
350
140
450
212
600
284
700
355
800
424
50
100
200
300
400
500
600
12
12
12
12
12
12
12
See Fig.
PEAK I1ECUI\I1E~T
AMPEI1ES .
50
PE~p~~~~E.
One-hal f cycle.
Sine
wave
240
..
For one or more

than one cycle.
50 I
I 240 I
avai lable in reverse-polarity
versions:
INI199-RA,
INI200-RA,
INI202-RA,
INI20'l-RA, IN 1-205-RA, INI206-RA
INI203-RA,
designed to meet stringent mil itary mechanical

and environmental
specifications
diffused-junction
process -- exceptional
formity and stability of characteristics
hermetic
_ welded
seals
construction
- low thermal
resistance
_ low leakage
low forward
voltage
_ JEDEC
drop
uni-
current
DO-'l outl ine
50
50
2401 2401 2401 240
- high output current:

up to 30 amperes -- 6 rectifiers in 3-phase,
full-wave bridge circuit
240
up to 2'l amperes -- 'l rectifiers in singlephase full-wave bridge circuit
501
501
50
See Fig.4
CASE-TEMPERATURE
RANGE: Operating
and
Storage
-65 to +2000 C
S uperlmpose
.
d on deVlce
maximum
voltage,
current,
Max.
Forward
'"
Voltage
Drop
and
may
elapsed
be
for
operatIng..
WIt h'In t h e
and temperature
ratings
repeated
after
suffIcient
the device
to return
to the
thermal-equilibrium
time
has
presurge
conditions.
(Vol tsl . . .
Max.
Reverse
Current
(\1a.):
Dynamic
.....
Average
Resistance,
Junction-toCase.
value
perature
of
and average
Static ...
Max. Thermal
.
for one complete

cycle at case tem1500 C and at maximum
rated
voltage
forward
current.
.. - ...
<1'
~,
!r>
NATURAL COOLING.
SINGLE-PHASE OPERATION.
RECTIFIER TYPE IS STUD-MOUNTED DIRECTLY
ON HEAT SINK.
HEAT SINK: 1/16"-THICK COPPER WITH A MAT
BLACK SURFACE AND THERMAL EMISSIVITY
OF 0.9.
'to
~\
50
INCOMING-AIR
100
150
TEMPERATURE-C
10
':.
200
92CM-1I067RI
~. ~'t:!~
~~'t~,
~~
Fig.3
- Operation
Guidance
Chart
for
Types and corresponding
reversepolarity
versions.
all
SUPPLY FREQUENCY-60 CPS SINE WAVE

CASE TEMPERATURE-ISO C
RESISTIVE OR INDUCTIVE LOAD.
RMS SUPPLY VOLTAGE MAXIMUM-RATED VALUE
AVERAGE FORWARD CURRENT-MAXIMUM-RATED VALl.
2SO
"'-
......
"~
""-
200
"'-
or"
~~
"'-
ISO
"'-
~~
"'-
~~ 100
2
xQ.
.,:>
~<t
50
Fig.2
- Operation
Guidance
Chart
for
Types and corresponding
reversepolarity
versions.
all
'-..
~
2
Fig.4
- Peak-Surge-Current
Rat ing Chart
all
Types
and corresponding
reversepolarity
versions.
for
~~.~T;~~7:~~8f::
FOR DC ~;E~_~~~~l.gS;E:.M;~~.T~~~Y~
rmn~ ... :
. ~I.;;,
.::: j : : : J: .:..
...........1:.
Ill!.
~
L4~~
.;; ..'K
1.3
~
:E
::f; :~.l ";".

1.2 ...
~
~
;:,
ii:t:1
:!
'"
w
~ 1.5
BO
> :; :::: ;~
111ill;~i : .,':
o
i
'I:'T
::.: :&:: ...

.:1: :!~:1~
, ,.,: :
..
...
."
.. I:l ..
~
~
" 2
~
.:: .
....
j::::::
t~~ ..
\.1'---
'"w~ 2.5
:.1:.'.
.'."
....
K. :::::
~~i;E+
. : "'~'
~
~
~ O.5.~
'ii!
100
120
Fig,5
- Current-Multiplying-Factor
Polyphase
andDC operation
for
corresponding
reverse-polarity
all
Chart for
Types
and
versions.
Fig.7 - Typical
Reverse
C1aracterist
ics
all Types and corres?cndir.g
reversepolarity
versions.
for
~''''"'''"
DFGC
~
MICAfNSULATOR
:::~:~::;,:~:lISHEO
Q
e;::-------- :::~:~:~~~:Lt~ED
HEATSINK
{CHASSIS}
OFJO
~~6.L~~_;;~~n~~:'~~Gm~~:~~G
t:=====
-0.055'n.
fO'--- ~~~
NR59B
INSULATOR
CONNECTOR~
AT PVIlISHEO
HA,flOW"AE,.".,CES
AVAIlA8lE
Fig,6 - Typical
Forward
Characteristics
all Types and corresponding
reversepolarity
versions.
THICKNESS
V".L ..UATPV8LISHEO
HAflOWAFlE
PRICES
for
@ ~:~~~CKWASHER}
SVPPllEO
NA38C
HEX.NUT
:~:~CE.
Fig.8
Because these rectifiers may operate at voltages which are dangerous, care should be taken in
the design of equipment to prevent the operator
from coming in contact with the rectifier.
The recommended installation torque is 15 to
20 inch-pounds applied to a 10/32 UNF'-2B hex nut
assembled on stud thread.
The applied torque during installation
not exceed 25 inch-pounds.
- Sugges
ted
Moun t ing
Arrangemen
t,
per rectifier cell for polyphase operation and

dc operation.
The procedure
for the use of
Fig.5 is as follows:
Step. I: . From Fig.5 determine
the currentmultipl Ylng factor for the app licable conduction
angle.
(For dc operation use current multiplYing factor of 0.8.)
should
Use of Rat i ng Charts and Ope rat i on Gu i dance Chart.

Fig.5 is used in conjunction with Fig.2 and
Fig. 3 to determine maximum average forward amperes
Step 2: Divide the required load current in

amperes by the number of rectifier
circuit
branches - as shown in the following Table to determine average forward amperes per rectifier cell.
Type of Operation
Single-Phase, FullWave:
Center-Tapped
Bridge
Three -Phase:
Wye
lliuble Wye
Bridge
Six-Phase Star
Ho. of Circuit
DIMENSIONAL OUTLINE
JEDEC 00-4
Branches
r~~~'~
2
2
-"~e... ..t"
. .. .......
SEE
/'
INOTE :3 ----
3
6
3
6
..
.424'1
If
~
Step 3:
Multiply
average forward
amperes
established in Step 2 by the current-multiplying
factor established
in Step 1 to determine
adjusted average forward amperes per rectifier
cell, for use with Fig.2 or Fig. 3.
Step~:
Using the product obtained in Step 3.
determine from Fig.2 or Fig.3 either (a) the
maximum allowable incoming-air temperature or
ambient temperature for a given heat-sink size,
or (b) the minimum heat-sink size for a given
incoming-air temperature or ambient temperature.
.t. Polarity
Example
lNl199-A.
lN1202-A.
lN1204-A.
lN1206-A.
Cond it ions:
(a) Three-phase, half-wave (wye) operation, cooduction angle = 1200
Polari ty symbol for types

lNl199-RA.
lN1200-RA.
lN1202-RA.
lN1203-RA.
lN1204-RA.
lN1205-RA.
and IN1206-RA.
(b) Desired output current = 30 amperes

(c) Forced-air cooling; incoming-air
ture = 900 C
tempera-
Problem:
Determine mlnlmum heat-sink Slze.
Procedure:
Step 1: From Fig. 5, the current mul tipl ying
factor for a conduction
angle of 1200 is
1.18.
Step 2: For three-phase half-wave operation
the number of rectifier circuit branches is
three. The average forward current through
each rectifier cell is, therefore,
30/3,
or 10 amperes.
Step 3: Multiplying average forward amperes
(10) obtained
in Step 2 by the currentmultiplying factor (1.18) obtained in Step 1
yields 11.8 adjusted forward amperes.
Step 4:
From Fig.3, for forced-air cooling.
the minimum heat-sink size for the conditions
shown is 2-1/2" x 2-1/2".
symbol for types

lN1200-A.
lN1203-A.
IN1205-A.
and
Hote I: Normal installation torque is 15 to 20

inch-pounds appl ied to a 10/32 UNF-2B hex nut
assembled on stud thread.
The appl ied torque
duri
ng
nstallat
jn,..,
:-=:t')c
ld
not
exceed
25
i nch-
pounds.
Hate 2:
max.,
Diameter of unthreaded
0.16)"
port ion:
0.189"
min.
Hote 3: Angular orientation of this terminal is

undefined.
Hote~:
Thedevice maybeoperated inany position.
Rectifiers
OO(]5LJ[]
1N249C
1N25OC
1N1195A
Solid State
Division
1N1196A
1N1197A
1N1198A
Appl icat ions:

In power supplies for mobile equipment,
dc-to-dc
converters,
battery
chargers,
dynamic
braking
system~,
aircraft
and
missile power supplies, high-power
transmitter
and rf-generator
power supplies,
machine-tool
controls,
dc-motor
power
supplies,
and in other
heavy-duty
industrial and military equipment.
HALF-WAVE
RECTIFIER
SERVICE
Maximum Ratings:
Absolute-Maximum Values for SUPPly frequency of
60cps, Single-Phase Operation, and with
Resistive
At
Load
available in reverse-polarity
IN2~8-RC, IN2~9-RC, IN250-RC,
IN 1196-RA, INI197-RA, INII98-RA
versions:
INI195-RA,
designed to meet stringent military mechanical and environmental specifications
PEAK INVERSE
VOLTS ..
RMS SUPPLY
VOLTS . .
DC BLOCKING
VOLTS ..
FORWARD
AMPERES:
Average
or Inductive
55
110
220
:!OO
400
500
600
39
77
154
212
284
355
424
50
100
200
300
400
500
600
20
20
20
20
20
20
20
90 I
90
DC:
1500 C
case
tern
perature.
At other
temperatures
See
PEAK RECURRENT
AMPERES .
PEAK SURGE
AMPERES:.
90 1 90 I
Chart
Rating
90 I
90 1 901
diffused-junction
process -- exceptional unlformity of characteristics
welded construction
hermetic seaIs
low thermal res istance low leakage current
low forward va ltage drop J EoEC 00-5 outl ine
high output current: UP to
8~ amperes -- 6 rectifiers in 3-phase,
full-wave bridge circuit
60 amperes -- ~ rectifiers in slngrephase full-wave bridge circuit
(One-half
cycle,
sine
wave)
(For
more
than
one
cycle).
350
1350
1 350
1 350 1 350 1 350 I 350
See Rating
Chart
IV
CASE TEMPERATURE:
t i ng
and Storage
Ope ra
-65 to +1750
at 1500 C Case
Characteristics
Max.
Forwa
Vol tage
(Volts)
Temperature
I'd
Drop.
0.6
10.6
10.6
10.6
I 0.6
I 0.6
1 0.6
Max.
Reve rse
Currente
(Ma.)
...
3.813.613.413.212.512.211.5
Superimposed
on device
operating
within
the
maximum
specified
voltage,
current,
and temperature
ratings
and
may
be repeated
after
sufficient
time
has
elapsed
for
the
device
to
return
to
conditions
At ma~imum
ward
amperes
plete
cycle.
the
presurge
thermal
equilibrium
peak
inverse
20,
and
voltage,
averaged
average
over
one
forcom-
Fif 1 - Rattnf
Chart
1N249-C.
IN250-C.
INl197-A,
INl198-A.
reverse-polarity
1 for
Types
IN248-C,
INl195-A.
INl196-A.
and correspondinf
versions.
EM,ss'V'1Tilllllll
OF 0.9,
INCOMNG-AIR
TEMPERATURE: MEASUREO AT A POINT
IN SPACE
!4. AWAY
FROM
T..-E CASE AND
ttLACt\
5URFAC~
ANO
THt.RMAL
!4" BElDW THE HEAT SINK.
2.
::la:
..'"
~ 20
.~
c
a:
a:
.'15" "
.
'"
i?',
15
'"
.'""
'"
:>
'"i
'0
10
'"
92CM-I0741
Fi~. 2 - Hatin! Chart II for Types iN248-C.

1N249-C. IN250-C. INl195-A. INl196-A.
INl197-A. INl198-A. and correspondin~
reverse-polarity
versions.
92CM-I074!t
Fi~. 3 - Hatin~ Chart III for Types IN248-C.

1N249-C. IN250-C. INl195-A. INl196-A.
reverse-polarity
versions.
SUPP\..Y fREQUENCY;:::60 CPS SINE WAVE

CASE. TEMPERATURE =1.~C
RESlSTIV[ OR INDUCTIVE LOAD
RMS SUPPLY VOLTAGE =h4AXIMUM RATED VALUE
DC OUTPUT CURRENT=MA,)(IUUU
RATED VALUE
400
~d \ '\..
300
~3
~~2oo
~:J
",15
~~
",
100
"-
.......
9ZCS-I090Q
Fi~.4 -Hatin! Chart IV for Types IN248-C.

1N249-C. IN250-C. INl195-A. INl196-A.
reverse-polarity versions.
Fi!.5 - Chart V for Types IN248-C. 1N249-C.

IN250-C. INl195-A. IN1196-A. IN1197-A
INl198-A. and correspondin! reversepolarity versions.
Fif!.6
- TYPical
Forward
Charactenstics
for
Types
IN248-C,
1N249-C.
1N250-C.
INl195-A.
INl196-A,
INl197-A,
1Nl198-A,
and
correspondinf!
reverse-polarity
verSions.
Because these recti fiers may operate at vol tages which are dangerous, care should be taken in
the design of equipment to prevent the operator
from coming in contact wi th the recti fier.
The recommended installation torque is 26 to
36 inch-pounds applied to a 1/4-28 lNF-2A hex nut
assembled on thread.
The appl ied torque during installation should
not exceed 75 inch-pounds.
Use of Rating Charts
O1art V is used in conj unction wi th Rating
O1arts II and III to determine maximum average
forward amp~res per recti fier uni t for polyphase
operation and dc operation.
The procedure for
the use of O1art V is as follows:
Step I: From Chart V determine
the currentmultiplying factor for the applicable conduction
angle.
(For dc operation use current multiplying factor of 0.8.)
Step 2: [nvide the required load current in
amperes by the number of rectifier
circuit
branches -- as shown in the following Table -to determine average forward amperes per rectifier element.
Type of Operation
No. of Circuit Branches
Si~gle-Phase, Fullwave:
Center-Tapped
2
Sri e
2
ree-
ase:
Wye
Double Wye
Bri e
lX-
ase
3
6
6
tar
Step 3: Multiply average forward amperes established in Step 2 by the current multiplying
factor establ ished in Step 1 to determine ad-
Fif!.7
- TYPical
Reverse
Charactenstics
for
Types
IN248-C,
1N249-C,
IN250-C.
INl195-A,
INl196-A,
INl197-A,
INl198-A.
and
correspondinf!
reverse-polarity
versions.
justed average forward amperes per rectifier

element, for use with Rating O1art II or Rating
O1art III.
Step ~: Using the product obtained in Step 3,
determine from Rating Chart II or Rating O1art
III either (a) the maximum allowable incomingair temperature or ambient temperature
for a
given heat-sink size, or (b) the minimum heatsink size for a given incoming-air temperature
or ambient temperature.
Cond itions:
(a) Three-phase,
half-wave operation; conduction angle = 1200
(b) Desired output cur~ent = 45 amperes
(c) Forced-air cooling; incoming-air temperature = 900 C
Problem:
Determine
minimum heat-sink
Size.
Procedure:
Step 1: From O1art V, the current multiplying
factor for a conduction angle of 1200 is 1.18.
Step 2: For three-phase half-wave operation
the number of rectifier circuit branches is
three. The average forward current through
each rectifier element is, therefore, 45/3,
or 15 amperes.
Step 3: Multiplying average forward amperes
05) obtained in Step 2 by the current multipI ying factor (1.18) obtained in Step 1 yields
17.7 adjusted average forward amperes.
Step 4: From Rating Chart III, for forcedair cooling, the minimum heat-sink size for
the conditions shown in Step 3 is 3" x 3".
DIMENSIONAL
OUTLINE
J EOEC
00-5
.140' MIN.
.I7S" MAX.
CIA.
HOLE
Pol ar i ty
lN2~B-C.
symbol
lN2~9-C.
lN1195-A.
lN1196-A.
and lN119B-A.
for
types
lN250-C.
lNl197-A.
Polarity
symbol
lN2~B-RC.
lN2~9-RC.
lNl195-RA.
lN1196-RA.
and lNl19B-RA.
NOTE 2:
ANGULAR ORIENTATION
OF THIS
NOTE 3:
DEVICE
IN
CAN BE USED
for
types
lN250-RC.
1~1197-RA.
TERMINAL
ANY POSITION.
UNDEFINED.
[Jla3LJO
Solid State
Division
1N1183A 1N1184A
1N1186A-1N1190A
40-Ampere Silicon Rectifiers
Stud-Mounted
Types for I ndustrial and Military
Power Supplies
Features:
_
Welded construction
_ Low forward voltage drop

- Low leakage current
_ High output current:
- JEDEC DO-5 Outline
up to 160 amperes - 6 rectifiers in 3-phase, full-wave bridge circuit
up to 120 amperes - 4 rectifiers in single-phase, full-wave bridge circuit
Available in reverse-polarity versions:
1N1183RA, 1N1184RA, 1N1186RA, 1N1187RA, 1N1188RA, 1N1189RA,
1N1190RA
-
Extra-high-strength zirconium-alloy
torque of up to 50 inch-pounds
Designed to meet stringent military mechanical and environmental

specifications.
RCA-1N1183A, lNl184A,
lN1186A, lNl187A.
lNl188A.
1Nl189A,
and 1Nl190A are 40ampere, diffused-junction
silicon rectifiers suitable for use in generatortype power
supplies for mobile electrical and electronic equipment, in
dc-to-dc converters and battery chargers, and in power
supplies for aircraft, marine, and missile equipment. trans
mitters, and rf generators. They are also extremely useful in
power supplies for de motors, in welding and electroplating
equipment. in dc-blocking applications, in magnetic amplifiers, and in a wide variety of other applications in
heavy-duty industrial and military equipment.
lNl183A
PEAK REVERSE VOLTS ..............
RMS SUPPLY VOLTS .....................
DC BLOCKING
VOLTS
50
35
50
....................
AVERAGE FORWARD AMPERES:

At 1 SOOC case temperature ...............
At other case temperatures ................
PEAK SURGE AMPERES:'
One-half cycle, sine wave
.................
.................
Operating and storage ....................

Characteristics:
Max. Forward Voltage Drop (Volts)b ...........
Max. Reverse Current (mAl:
PEAK RECURRENT AMPERES ............

CASE TEMPERATURE
RANGE:
~nami~
StaticC
........................
...............................
Max. Thermal Resistance,

Junctionto-Case ........................
Diffusedjunction process - exceptional uniformity

stability of characteristics
Hermetic seals
and
These rectifiers are conservatively rated to permit continuous

operation at maximum ratings in applications requiring high
reliability under severe operating conditions. In addition,
they utilize a special zirconium-alloy mounting stud which
can withstand installation torques of up to 50 inch-pounds a feature of significant value in applications involving
mechanical shock and vibration.
lNll84A
100
70
100
lN1186A
200
140
200
For more than one cycle
mounting stud - withstands installation
lN1187A
lNl188A
300
400
284
400
212
300
lNl189A
lNll90A
500
600
355
500
424
600
~
~
~
40
See Fig. 1
800
See Fig. 5
195
-65 to +2000C
0.65
2.5
a Superimposed on device operating within the maximum specified

voltage, current, and temperature ratings and may be repeated after
sufficient time has elapsed for the device to return to the presurge
thermal--equilibrium conditions.
2.5
2.5
2.5
0.015
2.2
1.8
~
~
IC/W
b Average value for one complete cycle, at maximum peak reverse

voltage, maximum
average forward amperes = 40, and case
temperature (OCI = '50.
C DC value, at maximum
(OCI = 25.
peak reverse voltage
and case temperature
FORCED-AIR COOLING:AR VELOCITY"~I SINGLE-PHASE OPERATION.

1000 FEET PER MINUTE PARALLEL RECTIFIER TYPE IS STUDTO PLANE OF HEAT SlM<.
MOUNTED OfiECTLY ON HEAT SN<.
4
HEAT SlNK:1/16--THICK COPPER
WITH A MAT BLACK SURFACE
AM> THERMAL EMISSIVITY OF 0.9.
tNCOttlNG-AIR TEMPERATURE;
JlEASURED AT A POINT IN SPACE
1/4- AWAY FROM THE CASE ANO
114- BELOW THE HEAT SIM(.
CASE
TEMPERATURE:150o
SUPPLY
F"REOUENCY:60
CPS SINE WAVE
RESISTIVE
OR INDUCTIVE
LOAD.
RMS SUPPLY
VOLTAGE:MAXIMUM-RATED
VALUE
AvERAGE
FQRWARD
CURRENT~MAXIMUM-RATED
VALUE
800
\
~~
600
~~
..
~"
""
~"~
,u
~'"
~~
400
~~
2'"
~i
:I:<J: 200
----...
--
---
~i~~INSULATOR
:::~::;':I~~:LISHEO
GJ
--0
{~~~~~~~K
DF3H
TEFLON'
0----
~!~~~~;~;~:?:.,o
..~...~""
0.0.0.315
THICKNESS
INSULATING
BUSHING
on. (B.OOmmt
= 0.062 in. (1.53 mml
MAX.
A.A'CA"'''M''~'O
"
~~:~CTOR~-
AVAILA8LEArf'U81.ISHEO
HAROWAREPRICES
tOO
~
a
80
~.
NR110A
LOCK
NA388
HEX.
WASHER
~LIEU
:::CE
NUT
'"
!
e
92CS-1I340
Fig.6-
Typical forward characteristics for

ponding reverse-polarity versions.
all
types and corres*
INCHES
SYMBOL
A
MIN.
MILLIMETERS
MAX
MIN
0.450
MAX,
11.43
NOTES
0.375
9.52
.0
.0,
0.030
0.080
0.77
2.03
0.667
0.669
0.688
17.00
"
0.115
0.200
2.93
5.08
0.750
1.000
19.05
25.40
.M
0.220
0.249
5.59
6.32
0.422
0.453
10.72
11.50
2.28
0.794
20.16
16.94
N,
0.156
3.97
.w,
0.140
0.175
3.56
.T
"
0.090
1/4-28
UNF
114.'1'
2A
17.47
4.44
UN'
'A
0.002
0.050
0.006
0.152
NOTES:
1: Ch"mfer Ofundercut on one or both 1100 of hex.n,,! bMe il

optionlil.
2: Angullll"o""en~tion.nd contour of Tetminal No.1 Iloption.1.
3: oW il p'lch diilt1leterof coated threads. REF: ScrewThrell!d
St"nd"rds lor Feder,,1Services, HlOdbook H 28 Part I.
Recommended torqu.: 30 inch-poundl.
OOcn5LJD
Rectifiers
lN3255
lN3193 lN3195 lN3253 lN3256
lN3194 lN3196 lN3254 lN3563
Solid State
Division
Diffused Junction
Silicon Rectifiers
For Industrial and Consumer-Product
Applications
Features:
Cylindrical design with axial leads for simple handling and installation
Compact, hermetically sealed metal case (0.405" max. length;
0.240" max. dia.)
Insulated types 1N3253, 1N3254, 1N3255, 1N3256, and 1N3563

have transparent, high-dielectric-strength plastic sleeve over metal
case
RCA-1N3193, lN3194, lN3195, lN3196, lN3253, lN3254,

1N3255, 1N3256, and 1N3563 are hermetically sealed silicon
rectifiers of the diffused-junction type utilizing small cylindrical metal cases and axial leads. Types 1N3253, 1N3254,
1N3255, and 1N3256 are insu lated versions of types 1N3193,
lN3194, and lN3196, respectively. Type lN3563 is an
insulated rectifier which does not have an uninsulated
equivalent.
High maximum forward-current

amperes at 75 c
ratings - up to 750 milli-
Peak-reverse-voltage ratings - 200 to 1000 volts
Maximum free-air operating temperature - 100
Designed to meet stringent temperature-cycling and

humidity requirements of critical industrial and consumer-product applications
RECTIFIER SERVICE (For a supply-line frequency of 60 cps)

MAXIMUM
Values:
For resistive or inductive load

1N3193
1N3253
RMSSUPPLY VOLTAGE
FORWARD CURRENT:
For free-air temperatures
1N3194
1N3195
1N3196
1N3254
1N3255
1N3256
400
600
420
200
140
280
For capacitor;nput filter

1N3563
1N3193
1N3253
1N3194
800
1000
200
560
700
70
400
140
400
500
500
6
35
1N3195
1N3255
1N3256
600
800
1000
volts
210
280
350
volts
500
6
400
300
4
ma
amp
35
35
35
35
amp
1N3254
1N3196
1N3563
up to
75C. For free-air temperatures
above 75C, see Rating Chart.

DC
PEAK RECURRENT
SURGE - For "turn-on" time
of 2 milliseconds
FREE-AiR-TEMPERATURE
Operating. . . . . . . ..
Storage
LEAD TEMPERATURE:
.
RANGE:
.
For 10 seconds maximum

Characteristics,
.
.
.
.
-65 to +100
-65 to +175
C
C
255
At a Free-Air Temperature of 2SOC:

1N3195
1N3255
Maximum
1N3196
1N3256
1N3563
Instantaneous Forward
Voltage Drop at dc forward current

of 0.5 ampere
Maximum Reverse Current:
Dynamic, at TFA
Static, at TFA
= 750C"
250C**
.
.
1.2
1.2
1.2
0.2
0.005
0.2
0.005
0.2
0.005
volts
ma
ma
DO NOT EXCEED MAXIMUM PEAK-REVERSE-VOLTAGE RATING.

SOLID-LINE
OJRVES: DYNAMIC CHARACTERISTICS
MEASURED AT FREE-AIR TEMPERATURE.75C AND AT
MAXIMUM DC FORWARD-CURREHT RATING
DASHED LINE CURVES: STATIC CHARACTERISTICS
MEASURED AT FREE-AIR TEMPERATURE"
25- C
'00
c9,q'.>
\t\:!>'l.t;)"!>
~II,'.>Z~4 ~",~~
II-
IN'3196
IN'3256
IN~63
'0
92CS-I0919RJ
FigA-
-,~~~.,"'}-
~~
::-
\~~~-
I"~;-~
56
and 1N3254
:,
Jj
TYPE
IN3194~I,N3254
r,
\tl3\96
+~
1,,!t>6'.>
c.
TYPE
IN3194,IN3254
OUTPUT
VOLTAGE ~
_ .
.!
~
j.:
. .'
--F-cf-~
...... .<C.25()~FD
. :100
0.1
:1
-.:j
DC
rI
~;1~~
'ii~~"~
I"
1N3194
Typical operation characteristics of types

in fullwave voltagedoubler
service.
'"~
160
>
I-
:>
a.
t;
140
0
u
0
120
9ZCS -I0915RI
Fig.8-
Typical operation characteristics of

1N3256 in half-wave rectifier service.
types
1N3196
and
CATHODE
LEAD
1.4 (35.6)
MIN.
(NOTE I)
1.4 (35.6)
MIN.
i
METAL CASE
WITH
INSULATING
SLEEVE
(NOTE 3)
'
10.24016.,01
MAX.
GLASS
iNSULATION
0135 (3.43)
0.139( 353) DJA
(2 LEADS)
0.021 (0.686)
0035 (0.889) DtA
NOTE 1: CONNECTED
TO METAL
NOTE 2: ARROW INDICATED

CURRENT
NOTE 1: CONNECTED
FLOW AS INDICATED
OF FORWARD
(2 LEADS)
0021 (0.686)
0035(0.889)
CASE.
DIRECTION
(EASY)
BY DC AMMETER.
NOTE
TO METAL
CASE.
DIRECTION
FLOW AS INDICATED
3: INSULATOR
SLEEVE
MAY
Material:
Plastic
0.002"
Dielectric Strength: 4500 volts/mil at 2SoC

3150 volts/mil at 150C
Moisture Absorption:
0.3%
Surface resistivity is not
affected by moisture.
Degree of Transparency:
Optically clear
OF FORWARD
(EASY)
BY DC AMMETER.
EXTEND
ENDS OF CASE.
Wall Thickness:
DIA
92CS-11229R3
NOTE 2: ARROW INDICATES

CURRENT
DIA.
1/16"
BEYOND
DDJ]3LJD
Thyristors/ Rectifiers
537025F
537035F
Solid State
Division
021015
021035
021035F
Horizontial- Deflection
SeR's and Rectifiers
1
*
For 1100 Large-Screen Color TV

Features:
Operation from supply voltages between 150 and 270 V (nominal).
Ability to handle high beam current; average 1.6 mA de.
Ability to supply as much as 7 mJ of stored energy to the deflection yoke, which is sufficient for 29 mm-neck picture tubes,
as well as 36.5 mm-neck tubes, both operated at 25 kV (nominal
value!.
021015
021035
021035F
Highly reliable circuit which can also be used as a low-voltage

power supply.
These ReA types are designed for use in a horizontal output

circuit such as that shown in Fig. 1.
The silicon rectifier D2101S (40892)* may be used as a

clamp to protect the circuit components from excessively
high transient voltages which may be generated as a result of
arcing in the picture tube or in a high-voltage rectifier tube.
The silicon controlled rectifier S3703SF (40888) * and the

silicon rectifier D2103SF (40890)* are designed to act as a
bipolar switch that controls horizontal yoke current during
the beam trace interval. To initiate trace-retrace switching
and control yoke current during retrace. the silicon controlled
rectifier S3702SF (40889) * and the silicon rectifier D21 03S
(40891) * act as the commutating switch.
To facilitate direct connection across each silicon controlled

rectifier, S3702SF and S3703SF, the anode connections of
silicon rectifiers D2103S and D2103SF are reversed as
compared to that of a normal power-supply rectifier diode.
HIGH-VOLTAGE
TRANSFORMER
,....~---,
I
COMMUTATING
SWITCH
r----,
I
J,
TRACE
CA
;-S~~~H
S3703SF
--..
I
Ly
I
I
I
I
For a description
of the operation
of SeA deflection
systems see ReA Application
Note AN-3780.
"A New Horizontal
Deflection
System Using S3705M and S3706M Silicon
Controlled
Rectifiers";
ST3871;
"An
SeR
Horizontal-SawtoothCurrent
and
High-Voltage
Generator
for
Magnetically
Deflected Picture Tubes"; ST-3835, "Switching-Device Requirements for a New HorizontalOeflection

System".
RATINGS,
Absolute-Maximum
CONTROLLED
RECTIFIERS
MAXIMUM
SILICON
Values:
TRACE SCR
S3703SF
NonRepetitive
Peak Off-State Voltage:
Gate open
Repetitive Peak Off-State Voltage:
VOSOM
Gate open .............................................
Gate open
.
angle
gate bias
Temperature
*Protection
J1s duration,
-remperature
transients
measurement
ELECTRICAL
SILICON
above this value must be provided.
3.2
3.2
5
A
A
50
50
200
200
25
25
PGM
which
Transients
results in a gate power
is shown on the DIMENSIONAL
A
A/J.iS
Tstg
-40
to 150
DC
-40
to BO
generated
by arcing may persist for as long as 10 cycles.
is permitted.
OUTLINE.
At Maximum Ratings and at Indicated Case Temperature (T C)
CHARACTERISTICS,
CONTROLLEO
ITSM
and gate voltage

point
25
di/dt
of gate current
max. reverse
-35 V
Range-;
against
product
700
25
ITlRMS)
Storage
............................................
Operating (easel
-Any
750
ITIAV)
for 10
750'
180:
RMS
. ...................
For one cycle of applied voltage. 50 Hz ...................
Critical Rate of Rise of On-State Current:
For V
VOROM rated value, IGT
50 mA, 0.1 J.iS rise time ...
Gate Power Dissipatione;
Peak (forward or reversel
BOO
VRROM
Average DC
o =
SCR
S37U2SF
VOROM
T C BOoC ....................................
Repetitive Peak Reverse Voltage:
On-State Current:
T C :: 60cC. 50 Hz sine wave, conduction
COMMUTATING
RECTIFIERS
CHARACTERISTIC
SYMBOL
LIMITS
S3703SF
S3702SF
MAX.
TYP.
MAX.
TYP.
UNITS

Gate open, VOO '" Rated VOROM
TC "'S50C
.
. .
.....
Instantaneous
. . . . . . . . . . . ...
IDOM
0.5
1.5
0.5
1.5
mA
2.2
2.2
'GT
15
40
15
45
mA
................
VGT
1.8
1.8
........ .... . ....
dv/dt
On-State Voltage:
iT'" 20 A
TC '" 25C
OC Gate Trigger Current:

TC::: 25C . . . . . . . . .
...... ..............
. . . . . . . . .... .... .... ....

TC::: 25C ..... ............
vT
Critical Rate-of Rise of Off-State Voltage:

TC
70C
..- .......
Circuit-Commutated
.. . .......
.&
700 IMIN.lA
VII'S
Turn-Qff Time t:
TC '" 70C, Minimum negative bias

dunng turn-off time = -20 V (S3703SF)
and -2.5 V IS3702SF)
Rate of Reapplied Voltage (dv/dt) = 175 VIlls.
Rate of Reapplied Voltage (dv/dtl '" 400 V/lls ..
Thermal Resistance:
Junction-to-Case
700lMIN.lA
.. .... .....
........
...................................
tq
2.4
ROJC
4.2
!Js
!Js
CIW
Up to 500 V max. See Fig. 3.

This parameter,
the sum of reverse recovery time and gate recovery time, is measured from the zero crossing of current to the stan of the
reapplied voltage. Knowledge
of the current,
the reapplied voltage, and the case temperature
is necessary when measuring tq. In the
\/YOrst conditions
(high line, zero-beam,
off-frequency,
minimum auxiliary load, etc.). turn-off time must not fall below the given values.
o
Turn-off time increases with temperature;
therefore,
case temperature
must not exceed 70
See Figs. 2 & 3.
e.
'i:~~..l'I/I'I;??
021015
REVERSE VOLTAGE"":
Nonrepetitive peak .................................
Repetitive peak ......................................
700
800
FORWARD CURRENT:
RMS ............................................
Peak-surge (nonrepetitive)
..............................
Peak (repetitive)
TEMPERATURE
3--
30
0.5
12
.....................................
Operating ICase) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
LEAD TEMPERATURE
A
A
A
T5tg
TC
c
c
TL
For 10s maximum
..............................
For ambient temperatures

up to 45C .
For a maximum of 3 pulses, 10}J.s in duration,
Maximum current rating applies only if the rectifier is properly mounted to maintain junction temperature below 150C. See Fig. 4 .
At distances
no closer to rectifier
ELECTRICAL
body than
during any 64
points
/.Is period .
A and B on outline
drawing.
CHARACTERISTICS
SILICON RECTIFIERS
MAXIMUM
CHARACTERISTIC
Reverse
SYMBOL
LIMITS
UNITS
021015
D2103S
D2103SF
Current:
Static
For VRRM
For V R
At 'F
= 500
Instantaneous
max. rated value,

V, T C
Forward
4 A, T A
ReverseRecovery
IFM
RANGE:
Storage ............................................
**
p'
70
Voltage
75C
pulse duration
= 25C
... .......
.....................
0, T C
.....
10
250
vF
1.4
1.5
trr
0.5
0.7
IJs
'RM
IJA
Drop:
.......... . . . . . . .. . . . . . . .......
Time:
3.14 A, % sinewave,
IF
100C
= 0.94
~--r
-10
25C
..
-di/dt
ps, T C
r---25/J-s-----l
~2.4/J-s
II
~ r--"
"I,I
t75V//J-s
REAPPLIED
dv/dt
. .. .. . . .
6A
:~
I
A/p.s,
. .. . . . . . ...
+H'
~IO/J-$-;tq
t:
j
1
II'
II
II
I I
I
to--
IBOv __
MAX.
I'dv/dt,
L
I
1/
:~P'::'&~D
dv/dt
400V//J-s
I REAPPLIED
- -
~~O/
The SCR's and rectifiers can be operated at full current only

if they have adequate heat sinking. The procedure illustrated
in Fig. 4 should be used when mounting the SCA's. A single
aluminum plate made as shown in Fig. 5 will provide
adequate heat sinking for trace and commutating
rectifiers.
Lip punching of the chassis at one end of the clamp plate,

makes it possible to mount the rectifier using only one screw.
1.125
------(2a.581----1
S3702SF and S3703SF fit socket PTS-4 (United International

Dynamics Corp.,
equivalent.
2029
Taft
St.,
Hollywood,
2 SCAEWS.
Fla.!,
or
632
~HOT"'V""L"'8L.EFIlOt.oAC'"
o",~l]~r,
0.312
(7.92)
f!7=
0
-~
'
g5~~~~
DF31A
MICA INSULATOR
SUf'PLtEOw,THOEV'CE
~cEHA:s~:~r
-::...
U"
2 METAL
2 LOCK
WASHERS
WASHERS
2 NYLON
INSULATING
BUSHINGS
I.D.-O.156,n.(4.00mm)
SHOULDER
OIA .
0.250
In,
(6.40 mml
SHOULDER
THICKNESS"
0.050 ,n. 0.27 mm) MAX.
2HEX.NUTS@
2S0LDER
495334-7
LUGS~
2HEX.NUTS@
~,
...."'"
FROMACA
Fig.5-Suggested clamp plate and mounting arrangement for

rectifiers 02103S and 02103SF.
In the United Kingdom, Europe, Middle East, and Africa. mountinghardware policies may differ; check the availability
of all items
With your ReA sales representative
or supplier.
shown
FigA-Suggested
sews
hardware and mounting arrangement for
S3702SF and S3703SF.
DIMENSIONAL
OUTLINE
(JEDEC TO-66)
S3702SF,S3703SF
INCHES
SYMBOL
MIN.
.'
0.250
0.028
.0
.0,,
0.470
0.190
0.093
0.050
",
"
0.360
0.142
0.958
'p
"
'2
0.570
MILLIMETERS
MAX.
MIN.
MAX.
0.340
0.034
0.620
0.500
0.210
0.107
0.075
0.050
6.35
0.711
8.64
0.863
15.75
12.70
5.33
2.72
1.91
1.27
0.152
0.962
0.350
0.145
0.590
TERMINAL
Mounting
DIMENSIONAL
OUTLINE
11.94
4.83
2.36
1.27
9.14
3.61
24.33
14.48
NOTES
3.88
24.43
8.89
3.68
14.99
CONNECTIONS
Pin 1 - Gate
Pin 2 - Cathode
Flange, Case - Anode
(JEDEC 00-1)
D2101S, D2103S, D2103SF
SYMBOL
MILLIMETERS
NOTES
MAX.
MIN.
MAX.
0.027
0.035
0.69
0.89
bl
D
3.18
0.360
0.125
0.400
9.14
10.16
Dl
0.245
0.280
6.22
7.11
POLARITY
SYMBOL INDICATES DIRECTION
OF FORWARD (EASY) CURRENT FLOW.
THIS POLARITY 1$ OPPOSITE TO ReA
POWER SUPPLY RECTIFIERS.
INCHES
MIN.
D2
F
0.200
0.075
1.91
Gl
K
0.725
18.42
0.220
0.260
5.59
6.60
1.000
1.625
25.40
41.28
5.08
0.025
0.5
0.64
12.7
NOTES:
1. Dimension to allow for pinch or seal deformation
anywhere
along tubulation
2. Diameter to be controlled
(optional).
from free end of lead to

attachment
to the body. Within the 0.188 inch
(4.78 mm) dimension,
the diameter
may vary to
OOm5LJD
S3705M D2600EF
S3706M D2601DF
D2601EF
Solid State
Division
These RCA devices are silicon controlled rectifiers and silicon

rectifiers intended for use in horizontal-deflection circuits of
large-screen color television receivers. A simplified schematic
diagram for the utilization
of these SCA's and silicon
rectifiers is shown below. For detailed information on the
operation of this new deflection circuit, seeApplication
Note
AN-3780.
The S3705M (40640)*
02601EF
(40642)*
components.
controlling
They
silicon controlled-rectifier
silicon
provide
the horizontal
and the
rectifier
are the trace circuit
bipolar
switching
action
for
yoke current during the picture
tube beam-trace interval.

The S3706M (40641) * silicon controlled-rectifier
and the
026010F
(40643)* silicon rectifier are the commutating
(retrace) circuit components. They control the yoke current
during the retrace interval.
The 02600EF
(40644)* silicon rectifier is used as a clamp in
the trace circuit
to protect the circuit
components from
excessively high voltages which may result from

arcing in the picture tube or high-voltage rectifier.
possible
SILICON
CONTROLLED
RECTIFIER AND ~
SILICON
RECTIFIER
COMPLEMENT
Supply
for off-the-line
voltages:
Outstanding
B+ = 155 V
operotion:
performance
picture-tube
dc average
tages
and reliability
COMMU-
S3706M
TATING
(RETRACE) D260lDF
SWITCH
D2600EF
D2601DF
D2601EF
(nom.
beam
JEOEC
00-26
current
capability:
to 1.5mA
(max.)
Can fully deflect

to 90, 1-7/16"
108 to 129 V ac
For Horizontal
Deflection Circuits
of Large-Screen
ColorTV Receivers
High
Designed
G--
value)
pi cture tubes having deflection

angles
neck diameters,
and 25-kV ultor vol-
Repetitive
Peak
With gate
Repetitive
Reverse
Voltage
open
temperature
of +600C and 60 Hz
Average OC at 1800 conduction

RMS ....................
angle.
IT(AV)
'T(RMS)
Surge (Non Repetitive)
On State
Current:
For one cycle

Critica
SCR
600
Current:
For case
Peak
SCR
Voltage
.
Peak
With gate
On-State
Off-State
open
of 60 Hz voltage.
I Rate of Rise
of OnState
Current:
For VOX = V(BO)O rated value.

IGT= SOmA, O.llJsrisetime
.......
Gate Power Dissipationa;
Peak (forward or reverse)
for 10 IJS duration
Temperature
Rangeb:
Storage
Operating
a Any values
-40 to + ISO
.
(case)
..
-40 to +100
of peak gate current or peak gate voltage
For information
on the reference
point
to give
of temperature
the maximum gate power are permissible.
measurement,
see Dimensional
/
dV/dt~'
I
I
I
VRX
_____ ,:----.l
I
I
I
I
I
I
I
I
~'Q
I
tori
I
I
Outline.
S3705M
Breakover Voltoge:
With gate open
At TC = + 100C ...............
At TC = +800C ................
V(BO)O
V(BO)O

With gate open.
VOO = V(BO)O rated value
At TC = +1000C
At TC = +800C
.
.
Instantaneous On-State Voltage:

For an on-state current of 30 A.
TC = +250C
DC Cate Trigger Current:
At TC = +250C
DC Cate Trigger Voltage:

At TC = +250C
Thermal Resistance:
Junction-to-Case
....
Circuit-Commutated Turn-Off Time:
(Reverse recovery time + gate
recovery time)
Trace SCRAt ITM = 6 A (tr = 25 ~s. di/dt = 2.5 A/~s).
Vo = 0 V (prior to turn on).
Vo = 400 V (reapplied at 175 V/~s).
VR = 0.8 V (min.).
IGT= 100mA.
VGK(bias) = -30 V (68 D source).
f = 15.75 kHz.
TC = 70C
.
Commutating SCRAt ITM = 13 A (Yo sine wave 7 ~s base.
initial di/dt = 20 A/~s to 3 A).
Vo = 350 V (prior to turn on).
dV/dt = 400 V/~s (to 100 V).
VR = 0.8 V (min.)
IGT= 100mA(tp= 3~s. tr= 0.2~s).
VGK(bias) = -2.5V (47 D source
during turn ofO.
f = 15.75 kHz.
TC = 70C .................
Commutating
Min.
Typ.
SCR
Max.
400
V
V
550
0.5
1.5
mA
mA
2.2
15
30
15
30
mA(dc)
1.8
1.8
V(dc)
C/W
100M
100M
0.5
1.5
vT
2.2
ICT
VCT
ROJC
UNIT
S3706M
Trace SCR
Typ.
Min.
Max.
S3705M, S3706M,
D2600EF,
D2601DF,
File 1'10.354
D2601EF
SILICON RECTIFIERS
D2601EF
Trace
MAXIMUM RATINGS:
D2601DF
Commutating
D2600EF
Clamp
Silicon Rectifiers
Non-Repetitive
Repetitive
Peak Reverse Voltagec ....
VRM(nonrep)
700
800
700
VRM(rep)
550
450
550
IF
IF(RMS)
IFM(rep)
IFM(surge)
1
1.9
6.5
70
1
1.6
6
10
1
0.2
0.3
20
A
A
A
A
e
e
Peak Reverse Valtaged ..
Forward Current: d
DC .........
RMS . .. .. .. .
Peak Repetitive.
Peak Surgee ...
Ambient Temperature
Operating ..
Storage .......
Range:
-40 to +150
-40 to +175
255
vFM
1.3
1.3
IRM
IRM
0.25
10
0.25
10
0.25
10
mA

At IF = 20mA, IR = ImA, Te = 25C.
trr
1.1
1.1
1.6
max
I'S
Turn-On Time:
At IF = 20 mA, Te = 25C
..........
ton
0.3
0.3
0.3
max
I'S
Peak Turn-On Voltage:

At IF = 20 mA, Te = 25C
..........
max
TA
Tstg
.......
Lead Temperature:
For 10 seconds maximum.
...........
CHARACTERISTICS:
Max. Instantaneous
At IF = 4 A, T A

.......
....
!o 75C
Max. Reverse Current (Static):!

At Te = 100C ..
At T A = 25C. . . . . . .
C Pulse width
3 pulses.
10 J.LS, pulse
repetition
rate
I'A
15.7 kHz,
a_.w
0:
For ambient temperatures

up to 45C and maximgm
thermal
resistance
from reference
point to ambient of 4S C/W with
devices operating in circuit of Fig.I.
J
Pulse
width
At max.
peak
= 3 ms.
reverse
voltage
and zero
forward
current.
'OO
0"
0:0:
~~
60
~9
~Q..
:,j:@
.......
40
...
0:
~ 2O!
Q.
0
-~
-~
0
AMBIENT
TEMPERATURE (TA)-
100
C
125
I~
02600EF,
S3705M, S37061\1
340 (864)
"'~
.500
.470
('~I;O)
"..
075
'"' ",~
l
02601 OF, 02601EF

JEOEC 00-26
JEOEC TO-66
pm)
I",,'"'
DETAILS
IN THIS
CATHODE
LEAD
1.4 (35.56)
MIN.
(NOTE Il
OF OUTLINE
ZONE OPTIONAL
.027-.036
(.69-.91)
i
,,d
OIA.
.344 -:410
(8.74 -10.41)
.107
REFERENCE
POINT
FOR CASE TEMPERATURE
MEASUREMENT
.093
(2072)
2.36
REFERENCE
POINT
~~~~:~EEr~~~~~E~
(478)
"--
210
2 MOUNTING
.152
.142
.190
(5 33)
ANODE
LEAD
HOLES
OIA (3.86)
. 3.61
.027-.036
1.4(35.56)
MIN.
CIA.
<'69j_~09i1
4.83
GLASS
INSULATION
~0220-0260
(5.5i,~A~601
<>
92C5-14457R3
Note 1: Connected to metal case.

Note 2:
Arrow indicates direction

of forward
as indicated by de ammeter.
02600EF,
026010F,
CATHODE.CASE
Pin 1: Gate
Pin 2: Cathode
Case: Anode
(easy) current
02601EF
flow
oornLJD
Solid State
Division
02601A
02601B
02601F
02601M
026010
02601N
1-A, 50-to-800-V
Fast-Recovery Silicon Rectifiers
/
I
General-Purpose
J~
Types for Medium-Current
Applications
Features:
IIIc,
Fast reverse-recovery
time (trr) 0.5 J.ls max. (I FM = 20 A peak
see test circuit Fig. 13)
0.2 J.lSmax. (I F = 1 A, I RM
see test circuit Fig. 14)
,oov
50 V
Low forward-voltage
2 A max.,
200 V
400 V
drop
Low-thermal-resistance
package
600 V
800 V
02601M
D2601N
hermetic
Package
00-26
0260' F 0260' A
RCAD2601series
types
rectifiers
in an axial-lead
their voltage
hermetic
are
silicon
package.
diffused-junctionThey
differ
only
0260'8
026010
ITA7892I
ITA7893J
Types
in
ratings.
D2601A,
high-speed
wheeling"
ITA78941 ITA78951
B, D, F, M, and
inverters,
choppers,
diode circuits,
N are intended
high-frequency
and other highfrequency
for use in
rectifiers,
"free-
applications.
These devices feature fast recovery times (0.5 J.ls max. from
20 A peak) without the "snap" type of turn-off which could
result
in the generation
of transients.
02601F
REVERSE VOLTAGE:
REPETITIVE PEAK ...............
NON-REPETITIVE
PEAK _
FORWARD CURRENT:Conduction angle = 180, halfsine-wave
RMS . . . . . . . . . . . . .
Average
REAK-SURGE (NON-REPETITIVE)
CURRENT:
At junction temperature IT Jl = 150C
For one-half cycle of applied voltage,
60 Hz (8.3 ms)
For other durations
PEAK (REPETITIVE)
CURRENT
TEMPERATURE
RANGE:
Storage.
Operating (Junction)
LEAD TEMPERATURE
(Durin9 Solderin9):
At a distance of 1/8 in. (3.17 mm) from
case for 10 s max.
VRRM
VRSM
50
'00
10
....
IFRM
......
Tstg
..
IF(RMS)
TJ
TL
..
..
02601A
026018
026010
'00
200
200
400
600
300
500
700
1.5
35
See Fig. 2
6
-40 to '65
40 to 150
225
At lead temperature of 100C (measured at point of anode lead 1/32 in: 10.031 mm) from the case).
02601M
02601N
800
1000
V
V
A
A
c
c
LIMITS
SYMBOL
CHARACTERISTIC
UNITS
ALL TYPES
MIN.
MAX.
Reverse Current:
Static
For VRRM
max. rated value, IF
0, TJ = 25C .......
TJ
15
250
See Fig. 9
vF
1.9
trr
0.5
jls
0.2
ReJC
Dynamic .......................................
Instantaneous Forward Voltage Drop:
At iF = 4 A, TJ = 25C (See Fig. 3)
. . . . . . . . . . ........

For circuit shown in Fig. 13, at IFM = 20 A,
-di F/dt = -20 A/jls, plus duration = 2.8 jlS,
TC = 25C ....................................
For circuit shown in Fig. 14, at IF = 1 A,
IRM = 2 max., TC = 25C . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance (Junctionto-Case)- .................
JUNCTION
;;;
z
o
:
ffi
(TJ ) "150C
...I\.J\.-
!::'"iso
i..,+,-I
0-",
~~
'"'"
TEMPERATUHE
C/W
39
60
~I
2.5
jlA
IRM
100C ......
8.3ms
O::t- 40
'z
z"'
00:
za:: 30
-::>
ll.. 1.5
",0
o
0:
;
0:
~~
,?,.
"0:
~e
"'~O.5
~
~
20
10
""-
.........
...........
..........
---
-.......
t--
0
20
40
60
ALLOWABLE
80
LEAD
laD
120
TEMPERATURE(T
140
L} -
160
--
180
c
92CS-17518RI
Fig. 1 - Average forward-power
..
2.5
JUNCTION
TEMPERATURE
dissipation vs. lead temperature.
FOR UNIT WITH TYPICAL FORWARD

VOLTAGE
DROP
SWITCHING LOSSES NEGLECTED
(TJ 1=25C
0:
"''"
~
CURRENT
2
/'
./
>
0>
~I
0Z
,-- --
to
"
-t,,~j.
MAXIMU~
~-~.5
"-~
::>
'"
:il
WAVEFORM
o~IFM
0.5
TYPICAL
--r
- --- 92C5-1752'
Fig. 4 - Average forward power dissipation as a function of peak

current and duty factor for units with typical forward
voltage drop.
0.-
CURRENT
WAVEFORM
IFM
I-
1i'.
'"'"o
;:;'"
,::'
,.
or
w
.. .
<i!
"
6or
tt~~
O'
O'
1?
O~
0"
fA
o~
~
~
O~
1.5
A (RMS)
LIMIT

current and duty factor for units with maximum forward
voltage drop.
FOR UNIT WITH MAXIMUM FORWARD

VOLTAGE
DROP
-;
I

current and duty factor for units with typical forward
voltage drop.
10.55 I
CURRENT
WAVEFORM
nn-
REFERENCE POINT FOR

MEASUREMENT
OF LEAD
TEMPERATURE:
1/8" FROM CASE
PULSE REPETITION
RATE = 60
PULSES Is
1FM
t~
O~t~~
>
or
w
0.40 ~
!
ffi 0.35
tr 0.30

current and duty factor for units with maximum forward
voltage drop.
1'00
I-
u
w
or
~
z
or
or
W
4.5
10
=>
U
I-
z
~ 4.0
or
3.5
1;
~ 3.0
l:l
or
or
PEAK FORWARD CURRE N T {! FM 1 = 10 A

RECTANGULAR-PULSE
DURATION (lpl=30f/.s
2.5
>0<
~I
r-
>~
o u
u w
w or
or "or
w
@'
JUNCTION
TEMPERATURE
n,,~~
ffi~1
~
"
~
~O.
0'
/"
0.1
RATE
I
OF DESCENT
I
10
100
OF FORWARD CURRENT {-dlF/dtl-A/,us

92CS-17527
Fig. 10 - Peak reverse-recovery current vs. rate of descent of

forward current.
100
RECTANGULAR-PULSE
JUNCTION
DURATION
TEMPERATURE
(TJl
Upl::
10
~'\~~
>=
u
~
<;'~
u
"'
"'<r _<r
,..~~
v
'"
"
~Q~
<r
ffi~'
~
~
~
:.
",,~"
~Q/,
~
I
<r~
:;..-
~<:-"'~
c;'~
:I..
~/
~O.I
~+
q~
II~\'\.~'"
~ '""'
"
(;l '3
~
>
l'
>-
(T J )=150
"'lE
~~I
~I
DURATION (tp)::: 30 J.LS
TEMPERATURE
~
~
PULSE
RECTANGULAR
JUNCTION
...
"'
10
30,us
:: 150C
IA
V
0.1 A
iiO
.....
'/
0.1
OJ
10
0.01
0.1
100
10
100
RATE OF DESCENT OF FORWARD CURRENT(-di.F/df)
RATE OF DESCENT Of FORWARD CURRENT (-dlF/dt}-A/,us
A/fLS
92C5-17529
92CS-17528
RCA
IN3194
OR
RCA
012018
I
t
RECTIFIER
UNDER TEST
AMPLITUDE
0-130 v
AC
SOINI)
R",
ReA
D26Q1N
50-n OUTPUT
TO OSCILLOSCOPE
I WITH RISE
TIME ~ 0.01 /-,5)
O.I(Nll
TRIGGER
SIGNAL
TO
OSCILLOSCOPE
NOTES:
ALL
RESISTANCE
RM : MONITORING
** UNITS
VALUES
ARE
IN OHMS.
RESISTOR
INTERCONNECTED
WITH
50-0
TERMINATING
RESISTOR
TERMINALS
OF OSCILLOSCOPE.
RG - SBU CABLE
AT INPUT
WITH
"* .
50-n
OUTPUT
TO OSClllOSCOPE"(WITH RISE
TIME:s 0.01 ~S)
30 V DC
(CONSTANT
SUPPLY)
CONSTANT
VOLTAGE SUPPLY
(ADJUST
FOR I A DC
THROUGH RECTIFIER
UNDER TEST-APPROX.
VOLTAGE
UNITS INTERCONNECTED
WITH RG-58U
CABLE
50-n
TERMINATING
RESISTOR AT INPUT
TERMINALS
OF OSCILLOSCOPE
RI
SELECTED TO GIVE MAXIMUM

lRM
NO GREATER THAN 2 A
(APPROXIMATELY
R2
DIMENSIONAL
JEDEC 00-26
OUTLINE
POLARITY
SYMBOL
INSULATION
LEAD No I
LEAD No 2
~'\
I
~
') I .~.
l,Jc,JJ .~,:.:J
INCHES
SYMBOL
0.
,D
G
L
MILLIMETERS
NOTES
MIN.
MAX.
MIN.
0.021
0.220
0.344
1,400
0.039
0.260
0.410
0.69
5.59
8.14
35.56
0.99
6.60
10,41
0.080
2.03
L,
MAX
,
1
NOTES:
1.
Package
and
<:ontour
lenglh
cyhnder
G.
optIonal
Slugs.
bul shall
Wllhln
If any.
shall
not be subject
cyhndet
of diameler
be meluded
within
to the mm,mum
0
Ihls
hmll
oD.
2.
Lead diameter
flash,
than
lead"nosh
slugs.
not controlled
build
m Ih"
up. and mlllor
:lone to allow
Irregularitlft
lor
olher
01
1.4 nl
I n,IOW
NON-INDUCTIVE
OR TEN
10 n, I W, 1"10 CARBON COMPOSITION
CONNECTED IN PARALLEL
RESISTORS
WITH
30 V 1
OOCDSLJD
Solid State
Division
1-A, 50-to-800-V
General-Purpose Types for
Medium-Current Applications
Features:
ANODE
JEDEC 00-15
ReA
02201
Fast turn-off:
Low overshoot current
Low forward voltage drop
Series devices are diffused-junction
0.5 JlS max. from 3.14-A peak
silicon
turn-off which could result in the generation of transients.
rectifiers in an axial-lead package. These devices, which differ
The 02201 series are intended for use in high-speed inverters,
only in their voltage ratings, feature fast recovery times {O.S
choppers. high-frequency rectifiers, "free-wheeling"

circuits, and other high-frequency applications.
JlS
max. from
3.14 A peak) without
the "snap"
type of
diode
REVERSE VOLTAGE:
REPETITIVE
PEAK
NON-REPETITIVE
.
PEAK
FORWARD CURRENT:*
RMS
AVERAGE:
PEAK SURGE (NON-REPETITIVE):

At junction temperature IT Jl
= 150C
For one-half cycle of applied voltage, 60 Hz (8.3 ms)

For other durations.
PEAK (REPETITIVE).
(JUNCTION)
LEAD TEMPERATURE
STORAGETEMPERATURE
OPERATING
50
See Fig. 3
RANGE
TEMPERATURE
-40
150
c
c
255
to
+ 165
(During Soldering):
Measured 1/8 in. (3.17 mml from case for 10 s max,
CHARACTERISTIC
SYMBOL
All Types
UNITS
Min.
Max.
Reverse Current:
Static:
For VRRM = max. rated value. IF = O.
IRM
TJ = 25C
15
/1A
TJ = 100C
250
/1A
1.9
0.5
/1S
1.5
/1S
20
C/W
Instantaneous
Forward
At iF = 4 A.
Reverse
Recovery
For circuit
Voltage
See Fig. 4.
in Fig. 1 :
At IFM = 3.14 A. -diF/dt

pulse duration
vF
Time:
shown
In Tektronix
Drop:
TJ = 25C
g.4 /1S.
10 A//1s.
TC = 25C
trr
type "S" plug-in unit:
At IF = 20 mA. I R = 1.0 mA
TC = 25C
(DC values)
Thermal
Resistance
(Junction-to-Lead)*
ROJL
See Fig. 14
1/2A
25 V
ISOLATION
TRANSFORMER
117E==J11'~cV
117 V
AC
RM
50lNII
O.ltNI)
50-0
OUTPUT
TO OSCILLOSCOPE
(WITH
RISE
TIME ~ 0.01 /-LS)
**
TRIGGER
SIGNAL
TO
OSCILLOSCOPE
NOTES
ALL
RESiSTANCE
*-
ADJUST
** UNITS
VALUES
FOR CURRENT
ARE
IN OHMS
WAVEFORM
INTERCONNECTED
WITH
50-n
TERMINATING RESISTOR
TERMINALS
OF OSCILLOSCOPE.
SHOWN
RG -58U
CABLE
AT INPUT
AT LEFT
WITH
REFERENCE
POINT
FOR MEASUREMENT
OF LEAD TEMPERATURE
.. 60
;;;
JUNCTION
TEMPERATURE
J\..f\..
(TJ I :150C
Y-rJ
>1
I-i~ HEAT
~ I--i~
~INK
83 ms
!:"i 50
1-",
.....
w,,~;:
r-....
..........
40
'z
zw
........
00:
~~
30
.... ~
we>
~~
20
"''0
><0:
~~
'00
'r--8
o
20
..
2.5
SURGE - CURRENT
40
60
ALLOWABLE
JUNCTION
80
LEAD
100
120
140
TEMPERATURE{T
Ll-
TEMPERATURE
(TJ)"
160
C
25C
./
./
~
~
21658
DROP
SWITCHING
LOSSES
NEGLECTED
CURRENT
WAVEFORM
z
o
~
'"'"
0: "0>
92C5-
VOLTAGE
o
0:
~I
3: -1.5
IZ
8100
- -CYCLES
rJfrlF~0~R~U~N~';T~W~IT~H~T~YP~'C~A~L~F~0~R~W~A~RD1~!ill~~il
0
>
0>
S
z
DURATION
0..
'"
~
"-::>
'"
180
0
0:
0
w
10
MAXIMU~
,-
0.5
_I
....-
I
1
I
---r-
TYPICAL
--
....-
I
I
'0
I

VOL TAGE
DROP
SW' TCHING LOSSES NEGLECTED
~
;;:
~z
CURRENT
~
15 2
.;:'"
0:
.:::'
~
~
'-'
4!
0:
;
0:
0
oJlJL
iii
t:
11
WAVEFORM
tl~~
'"
O '"
O
"
~
,,">
IFM
,,:I-
,,~
1.5-A{RMSILlMIT
350

VOLTAGE
DROP
REFERENCE
POINT FOR MEA SUREMENT
OF LEAD TEMPERATURE:
lIS" FROM
CASE, PULSE REPETITION
RATE:60
PULSES/s
'" 325
Onn-1FM
CURRENT
WAVEFORM
~300
-tt~~
w
~ 275
"'.~~.
>-
'" 250
w
'g"
-diF
Idt:IO
A/~s
10"'1. rRM
225
tR~C)
tj'
>
~ 200
o
I*--
175
50
75
100
125
LEAD TEMPERATURE
100
rRM
(RECl9.4 ~s -
trr
150
tTLl-OC
PEAK FORWARD CURRENTIIFM):IOA

RECTANGULAR-PULSE
DURATION (tp):3OfLs
>-
~
~
10
>-
ffil
>"'"U
o
U
I--
JUNCTION
TEMPERATURE
17JI<150'C
'" :i
w'"
W
'"
ffi~1
~
'""
~
/~_50'
~~. I
I
I
I/'
0.1
0.1
I
RATE
10
OF DESCENT
100
OF FORWARD CURRENT {-diF/dti-A/JLs

92CS-17527
100
RECTANGULAR-PULSE
JUNCTION
DURATION
TEMPERATURE
tTJ)
I<
(tpl
I<
10
30 JLs
150C
JUNCTION
>-
~
~
~ .,~
~\>I
.'
10
>-""
ffil
>~
o u
""
<,,~~
f<,~
",,~'I' ./
w
w",
'" :i
w'"
U
"
"'~
::0
t.
>
-'~~~
:L
",;,'1'
,.,,~"
+- ~~
f7;/
"'~
~O.I
I.
II.~
~ (I.~
.
~ I
./
30 fLS
(T J )-150C
DURATION (t pl-
TEMPERATURE
~O'l'
f<,\>+q~./
ffi~1
~
'""
~
RECTANGULAR-PULSE
IA
I--
-I
1
0.1
'" ~~'"
w
0.01
0.1
0.1
I
RATE OF DESCENT
10
OF FORWARD CURRENT
100
OJ
(-dlF/dtl-A/fLs
92CS-17528
I
RATE Of DESCENT Of
10
FORWARD CURRENT(-dLf/dt)
100
-
A/JLs
92CS-17529
DIMENSIONAL OUTLINE
JEDEC 00-15
INCHES
MilLIMETERS
SYMBOL
NOTES
MIN.
OB
0.030
MAX.
MIN.
0.034
0.762
0.863
00
0.133
0.137
3.378
3.4 79
0.280
0.285
7.112
7.239
1.000
25.40
L1
0.050
1.27
1. Package contour
optIonal
wIthin
cylmder
of d,ameter
Slugs. If any, shall be Included WIthin this cylinder

the minimum limIt of O
2.
MAX.
Lead diameter not controlled

build-up. and minor Irregularttles
,n thIs lone to
other than slugs.
<PO
and length
G.
but shall not be subject to
allow
for
flash,
leadflnlsh
6-A, 50-to-600-V,
Cathode
*-~~A
,
I
Cathode
Anode
Features:
Available
versions:
Low reverse-recovery
current
D2406A-R,
in reverse-polarity
D2406B-R,
D2406C-R,
Low forward-voltage
drop
D2406D-R,
D2406F-R,
D2406M-R
time (t,,)
0.351.1s max. (lFRM
0.2 I.Is max. (I F
ReA
D2406
series
and D2406-R
series
are
junction
silicon rectifiers
in a stud-type
hermetic
These devices differ only in their voltage
diffusedpackage.
ratings.
characteristics
transients.
devices
circuits,
VRRM
VRSM
Non-repetitive peak
FORWARD CURRENT (Conduction angle
half sine wave):
RMS ITC)
that
reduce
are intended
and other
02406F
(438791*
02406FR
(43879R)*
02406A
(43880)*
02406A-R
(43880R)*
50
100
200
Fig.1)
2 A max., see test circuit
the generation
rectifiers,
high-frequency
02406B
(43881)*
02406B-R
(43881 R)*
Fig.2)
of R F I and
for use in high-speed
high-frequency
100
hermetic
inverters,
"freewheeling"
diode
applications.
02406C
024060
02406M
(43PS21*
14388:l)*
(43884)*
02406C-R 024060-R 02406M-R
(43882RI* 143883R)* (43884R)*
200
300
300
400
500
400
600
800
V
V
= 180,
1000C)-
IFIRMS)
Average (T C = 100C IAt junction temperature IT Jl = 150C:

For one-half cycle of applied voltage, 60
For other durations
Peak (repetitive)
.
STORAGE-TEMPERATURE
RANGE
OPERATING IJUNCTION) TEMPERATURE
STUD TORQUE:
Recommended
9
6
10
Peak-surge (non-repetitive):
Maximum 100 NOT EXCEED) .
covery
choppers,
REVERSE VOLTAGE:
Repetitive peak
19 A peak, see test circuit
1 A, I RM
voltage
These
package
A
A
IFSM
Hz
(8.3 ms)
125 .
See Fig.3
IFRM
-40
25
to 165
150
15
25
DC
DC
in-Ib
in-Ib
LIMITS
UNITS
ALL TYPES
SYMBOL
CHARACTERISTIC
MIN.
MAX.
15
IlA
mA
1.4
0.35
IlS
0.2
Reverse Current:
Sratic
For VRRM
"" max.
Instantaneous
rated
Forward
value,
Voltage
= 0,
IF
TC
2SoC
TC
lOOoC
IRM
Drop:
At iF 6 A, T J = 25C
vF

For circuit shown in Fig. 1, at
I FM = 19 A, -di F/dt
pulsed
duration
25 Allls,
= 2.25 IlS, T C
25C
trr

IFM = 1 A, IRM = 2 A max.,
TC
25C.
Thermal Resistance (Junction-ta-Case)
ROJC
fT
1'25 v
~H1t
[l
RCA
IN3194
OR
RCA
012018
AMPLlTur)[
0-130
AC
C/W
RECTIFIER
UNDER TEST
0471'-F
J
*If*
ADJUST
UNITS
FOR CURRENT
TRIGGER
SIGNAL
TO
OSCIllOSCOPE
WAVEFORM
INTERCONNECTEO
WITH
soon TERMINATING RESISTOR
TERMINALS
OF OSCILLOSCOPE
ShOWN
RG -5BU CABLE
AT INPUT
AT
l l
WITH
50-n
OUTPUT
TO OSCILLOSCOPE*
(WITH RISE
TIME~ 0.01 ,.S)
30 V DC
(CONSTANT
SUPPLY)
CONSTANT
VOLTAGE SUPPLY
(ADJUST
fOR I A DC
THROUGH RECTIFIER
UNDER TEST-APPROX.
VOLTAGE
WITH RG-58U
CABLE
50-n
TERMINATING
RESISTOR AT INPUT
TERMINALS
OF OSCILLOSCOPE
RI:
(APPROXIMATELY
JUNCTION
TEMPERATURE
(TJ) =r~)OC
J\J\..
;;; ..
~ I 125
>--::IE
>-.,
yt
"''''
~!::!100
"'>oz
z",
0'"
z'"
75
-::>
"'U
~~
.,~50
"'"
~~
25
8.3ms
..
1000
:;
->z
'"
~
""-
'"~
......
(?
.,
............
::>
r-- r-
..
z
>z
"
1.4
fi)
JUNCTION
TEMPERATURE
9ZCS-ZZZ3Z
RESISTORS
(TJ)=25C
6
4
100.
6
/'
TYPICAL/
II
'I
2
I
0.1
MAXIMUM
'/
10
I,
II
II
INSTANTANEOUS
Fig.3 - Peak surge (non*repetitille) forward

current 115.
surge-.eurrent duration.
WITH

IRM
NO GREATER THAN 2 A
R2: I a,IOW
NON-INDUCTIVE
OR TEN
10 n, I W,I".
CARBON COMPOSITION
150
30 v)
2
3
FORWARD VOLTAGE DROP (vF)-V
9ZCS-ZZZ33
~
....!...
~

VOLTAGE DROP
CURRENT

VOLTAGE
DROP
WAVEFORM
O~IFM
~It~-!
..!!o..
z
Q
I-
~
~ 10
a:
9-A (RMS)
LIMIT
9-A
CRMS)
11011
20
30
40
50
9~
20
60
PEAK FORWARD CURRENT (IFM)
Fig.5 - Average forward power dissipation

as a function of peak current and
duty factor for units with typical
forward voltage drop.
FOR UNIT
WITH
TYPICAL
VOLTAGE DROP
SWITCHING lOSSES
FORWARD
CURRENT
NEGLECTED
WAVEFORM
rIL.Jr-,L
IFt~
~I
15
DROP
LOSSES
WAVEFORM
r"1 ri J L....J L
12
0"
o' "?it'
o:..ry
10
0':-
9-A (RMS)
LIMIT
0"
::-.~o
\ .
\l"'~
~~c"'\o~
~C~O
Q\)"'\ . "
Q\)-0
30
40
50
FORWARD CURRENT
(IFM)
60
-
20
A
92CS-22236
PEAK
Fig. 7 - A versge forward power dissipation

a:
CURRENT
NEGLECTED
,:\.09':J
..
..
....'"
II ~
~",\l''t
20
60/1)
'"
~
PEAK
60
(IFM)
- 6
~
~
50

VOLTAGE
SWITCHING
>
..!!o..
z
o
IZ
10
40
CURRENT

duty factor for units with maximum
I-
I,
30
PEAK FORWARD
92C5-22234
FOR UNIT WITH TYPICAL

FORWARD
VOLTAGE
DROP
SWITCHING
LOSSES NEGLECTED
30
40
FORWARD
50
CURRENT
60
(IFM)-A
Fig.8 - Average forward pO'Ner dissipation

forward voliage drop.
..
CURRENT
~~~;~~I~G
o~IFM
a:
::>
~
~
D~SES
NEGLECTED
WAVEFORM
~It~-!
..'"
I-
I-
"u
"'u
c.
"'.
~1'30
~t!!
c~
g
~ 1130
~.?
<D_
~
c
...J
'"::>
xc'"
'"
'"
'"xc
'"
::>
92CS22238
Fig.9 - Maximum allowable case temperature

'32CS22239
Fig.
to -
Maximum allowable case temperature

as a function of peak current and duty
factor for units with maximum forward
voltage drop.
IFM
..~
~nc
I-
"'0
~I
w-- 130
-',?
~'"j
'"
'"x
'"
=>
92CS-22240
92C5-
Fig. 11 - MaxImum allowable case temperature

duty factor for units with typ;cal
4-,-,"",.,
G
F;g.12 - Maximum allowable case temperature

OFOC
MICA
:::~:~::;,~:llS>1EO
INSULATOR
HEAT
INCHES
SINK
SYMBOL
MIN
{CHASSIS}
DF3D
TEFLON"
0.0."'
t:::===
INSULATING
0.275
BUSHING
,no 16.99mm)
THICKNESS-0.055
MAX.
'I'.
(I.40mmIMAX
.-.Y""l.-.BlEATPU8L'S"EO
>1"'ROWAREPR'CES
f"O\--- ~~~
NR59B
INSULATOR
CONNECTOR
~o
'-'V.'lAIU
A' I'UIllS EO
"'YA'lABlE.-.TI'UIl'S>1EO
HARDWAREPfI'CU
H"RD'IO"ARE
PfI'CU
NA38C
HEX.NUT
In the United
Kingdom,
hardware
policies
may
shown
with
your
ReA
~:~~~CK
WASHER}
::;:l'tO
0.020
MAX.
6.35
0.065
0.51
0.505
0.265
0.424
6.74
10.76
0.423
0.438
10.75
11.12
F,
0.075
0.175
1.91
4.44
15.24
20.32
0.600
0.800
,M
0.163
0.189
0.422
0453
10.72
N,
0.078
oT
0060
0095
1.53
- I
"
0.006
4.80
11.50
1.98
1032
0002
1.65
12.82
41'
1D-32UNF-2A
NOTES
10.28
2.41
UNF'2A
0.050
0.152
1: Chamfer or unde,eul on one Or both "des 01 huaganal base "

optional
2: Angular orientation and contour of Terminal NO.1 is optional.
3: (>Wis pitch diameter of coatl:!dIhreads. REF: $(:rew Thread
Standards lor Federal SerYlces.Handbook H 28 Part 1
RKommended torque: 15 onchpounds.
Europe, Middle
East, and Africa,
mountingdiffer;
check
the availability
of all items
or supplier.
Forward
When
NOTES'
OEv,n
0.250
MIN.
0.405
,
,0
,0,
OW
MILLIMETERS
MAX.
Incorporatmg
recommended
that
RCA
Solid
from
RCA Solid
State
ReA
Solid
the deSigner
DeVices",
State
Form
DIVISion,
State
refer
No.1
Reverse
Polarity
(D2406-R Series)
No.1 (Lug) - Anode

No.2 (Stud) - Cathode
No.1 (Lug) - Cathode

NO.2 (Stud) - Anode
DeVices
In
to "Operating
Box 3200,
Polarity
(D2406 Series)
CE-402,
equipment,
It
Considerations
available
Somerville.
on
IS
for
request
N.J. 08876.
22241
[ID(]5LJ[J
Solid State
1N3879-1N3883
1N3879R-1N3883R
Division
6-A, 50-to-400-V,
General-Purpose Types for High-Current Applications
Features:
Available in reversepolarity versions:
1N3879R, 1N3880R, 1N3881 R,
1N3882R, 1N3883R
Fast reverse-recovery time (trr) Forward-polarity
11N38791N3883)
200 ns max. (I F = 1 A, I RM = 2 A max., see test circuit Fig. 2)
Reverse-polarity
11N3879Rl N3883R)
For data on other RCA fast recovery rectifiers, refer to the following
data bulletins:
JEDEC DO-4
- Low reverse-recovery current

Low forwardvoltage drop
Low-thermal.resistance hermetic
package
RCA
6.A File No. 663 (02406 Series)

12A File No. 664 (02412 Series)
H1167
20A File No. 665 (02520 Series)

40-A File No. 580 (02540 Series)
RCA types 1N3879 diffusedjunction
1N3883 and 1N3879R - 1N3883R are
silicon
rectifiers
in a stud-type
hermetic
package. These devices differ only in their voltage ratings.
REVERSE VOLTAGE:
*Repetitive peak
Non-repetitIve
half
choppers, highfrequency rectifiers, "freewheel ing"

circuits, and other high-frequency applications
50
75
peak
*DC{Blockingl
FORWARD CURRENT
All types feature fast reverserecovery time of 200 ns max.

These devices are intended for use in high-speed inverters,
50
"0'.
(Conduction
100
200
100
300
400
500
400
V
V
V
angle"" 180 .
= 100oC)&
o
(TC - 100 Cl4
RMS (TC
Average
Peak-surge
At
9
6
(non-repetitive):
Junction
Peak
(T Jl
temperature
=<
150 C75
35
25
-65 to 175
(repetitive)
'STORAGE-TEMPERATURE
RANGE
'OPERATING IJUNCTION) TEMPERATURE
STUD TORQUE:
-65 to 150
*Recommended
15
25
Maximum (DO NOT EXCEED) .

accordance
temperature
wIth
JEDEC
A
A
For one cycle of applied voltage. 60 Hz

For ten cycles of applied voltage, 60 Hz
*In
300
400
sine wave):
Case
200
300
200
diode
regIstration
IS measured
at center
data.
of any
flat
surface
on the hexagonal
head of the mounting
stud.
A
A
A
c
c
in-Ib
in-Ib
LIMITS
SYMBOL
CHARACTERISTIC
All
UNITS
TYPES
MIN.
MAX.
15
/lA
mA
mA
vF
1.5
1.4
trr
200
ReJC
2.5
Reverse Current:
Static
For VRRM = max. rated value, IF = 0, TC = 25C
TC=100C
................
...........
IRM
-
...
Dynamic
For single phase full cycle avera911, 10 = 6 A, TC=100C
Instantaneous
Forward
Voltage
..........
IR(AV)
. .. ... . . .
VF(PK)
Drop:
... . ... . .
At iF = 6 A, VRRM = rated value, TJ = 100C
At iF = 6 A, TJ = 25C ....................................
Reverse
Recovery
For circuit
Time:
shown
in Fig. 2, at
IFM = 1 A, IRM = 2 A max., TC=

Thermal
Resistance
(Junction-to-Case)
25C
.....................
..........................
50-a
ns
C/W
OUTPUT
TO
OSCillOSCOPE"
{WITH RISE
TIME:50.0IjOSl
CONSTANT
VOLTAGE
SUPPLY
I ADJUST
FOR I A DC
THROUGH
RECTIFIER
UNDER TEST
-APPROX
I~RI
SELECTED
rOGlvE
lRM
NO GREATER
(APPROXIMATELY
IF
'"
R2
nl
RESISTORS
IN PARALLEL
IRM-
Fig. 2 - Test circuit
VI
MA)(IMUM
THAN 2 A
14
I D lOW NON-INDUCTIVE
OR TEN
10 n, I W 1"1. CARB0f'l
COMPOSITION
CONNECTED
I.
'0
WITH RG-58U
CABLE
50-a
TERMINATING
RESISTOR
AT INPUT
TERMINALS
OF OSCillOSCOPE
(pulsed de) for measurement of
reverse-recovery time.
WITH
DIMENSIONAL
JEDEC 004
SYMBOL
OUTLINE
INCHES
MIN.
MAX.
0.405
0.250
0.065
0.505
0.424
0.020
~
~
NR109.
STAALOCK
NA38C
HEX.
}
WASHER
00
00,
0.265
0.423
"
0.075
0.600
0.438
0.175
0.800
SUI'I'LIE.'
OEV'CE
NUT
MILLIMETERS
MIN.
10.28
6.35
0.51
'.66
12.82
6.74
10.75
1.!Jl
15.24
OM
0.163
0.189
0.422
0.453
0.078
10.12
N,
0.095
'.53
.T
0.060
,
"
10-32
.w
UNF2A
MAX.
4.15
NOTES
10.76
11.12
'.44
20.32
'.80
11.50
'.98
2.41
- -r
0.002
0.050
0.006
0.152
'''3'["'.''
NOTE:
1: oW is pitch diameter of coated th,..;!s. REF: Screw Threed

Standards for Federal SeniC8$. Handbook H 28 P.rt l.
Forward Polarity
(lN3879 - 1 N3883)
Reverse Polarity
(l N3879RI - 1N3883R)
No. 1 (Lug)
No.1
No.2
No.2
Anode
(Stud) - Cathode
(Lug) (Stud) -
Cathode
Anode
OOCTI5LJD
Solid State
Division
fO~,AI
02412 Series
02412-R Series
12-A, 50-to-600-V,
Cathode
Anode
Low reverse-recovery current
02412A-R,
024120-R,
low forward-voltage
low-thermal-resistance
02412B-R,
02412F-R,
0.35
0.2
RCA 02412
series and D2412-R
IlS
IlS
02412C-R,
!J2412M-R
time (trr) -
max. (lFRM
max.
(I F
1 A, I RM
covery
hermetic
ratings.
voltage transients.
These devices are
package.
These
circuits,
REVERSE VOLTAGE:
Repetitive peak
VRRM
VRSM
that
reduce
intended
high-frequency
and
Fig.1)
characteristics
choppers,
Non-repetitive peak
FORWARD CURRENT
package
series are diffusedjunction
silicon
rectifiers
in a studtype
devices differ only in their voltage
drop
hermetic
other
for
Fig.2)
the generation
use
rectifiers,
high-frequency
of R F I and
in high-speed
inverters,
"free-wheeling"
02412F
02412A
02412B
(43889'*
(43890)*
(43891)*
02412F-R 02412AR 02412B-R
(43889R)* (43890R)* (43891R'*
02412C
(43892'*
02412C-R
(43892R)*
024120
(43893)*
024120-R
(43893R)*
02412M
(43894)*
02412M-R
(43894R)*
100
300
400
400
600
800
50
100
200
200
300
diode
applications.
600
V
V
(Conduction angle = 1800,
half sine wave):

RMS (TC
100C)
Average (T C 1000C)Peak-surge (non-repetitive):
IF(RMS)
18
10
12
A
A
250
IFSM
At j'.mction temperature (T J) = 150C:

For one-half cycle of applied voltage, 60 Hz 18.3 msl
For other durations
Peak (repetitive)
.
IFRM
STORAGE~EMPERATURERANGE
OPERATING (JUNCTION) TEMPERATURE
STUD TORQUE:
See Fig.3
50
-40
Recommended
Maximum (DO NOT EXCEED) .
Number
Case temperature
in parentheses is a former
is measured
ReA
type
to 165
150
15
in-Ib
25
inlb
number .
at center of any flat surface on the hexagonal
A
c
c
stud.
LIMITS
ALL TYPES
SYMBOL
CHARACTERISTIC
UNITS
MAX.
MIN.
Reverse Current:
Static
For VRRM
"" max. rated value, IF
= 0, TC = 2SoC
TC:
Instantaneous
AliF:
Reverse
IRM
100C
100
~A
mA
1.4
0.35
~s
12 A. TJ:250C.
Recovery
vF
Time:

I FM : 38 A. -di F/dl : 25 A/~s.
pulse duration
= 4.5 J.ls,-T C :: 25C
Irr

IFM:
Thermal
1 A.IRM:2
Amax .. TC:250C.
Resistance (Junction-to-Case)
ReJC
0.2
1.5
C/W
[l!
1t
2.25 ftH
IN3194
ReA
OR
0'20'
B
AMPLITUDE
0-130 V
RECTIFIER
UNDER TEST
1.33 ~F
AC
5O(NI)
R",
500 OUTPUT
TO OSCILLOSCOPE
(WITH RISE
TIME ~ 0.01 fJ-S)
O.I(NII
TRIGGER
SIGNAL
TO
OSCILLOSCOPE
NOTES:
ALL
RESISTANCE
RM : MONITORING
***
ADJUST
VALUES
ARE IN OHMS.
RESISTOR
FOR CURRENT
WAVEFORM
SHOWN
WITH RG -58U
CABLE
50-a
TERMINATING
RESISTOR AT INPUT
TERMINALS
OF OSCILLOSCOPE.
AT lEFT
WITH
**
IA
50-n
OUTPUT
TO OSCILLOSCOPE'"
(WITH RiSE
TIME:::: 0,01 ,...S)
SLOW
BLOW
30 V DC
(CONSTANT
SUPPLY
1
CONSTANT
VOLTAGE
SUPPLY
(ADJUST
FOR I A DC
THROUGH RECTIFIER
UNDER TEST-APPRQX
VOLTAGE
WITH RG-5BU
CABLE
50-fi
TERMINATING
RESISTOR AT INPUT
TERMINALS
OF OSCILLOSCOPE
RI;
(APPROXIMATELY
JUNCTION
TEMPERATURElTJ);1500C
J\....f'L
'""
~l
>='"
~S200
i:!,>-
ZZ
0'"
~~
/50
14 Ol
i:'
~ ,
~
Ii!~
=><r
~;
--
........
100
,,<r
"'0
a."-
I--- I----
50
JUNCTION
TEMPERATURE
>'
~ 1008
6
;:: 4
lOa
'"
=>
r-+-
WITH
~
z
>"~
~
RESISTORS
(TJ);
25C
8.3ms
",=>
cxIOOO:
I
YT
250
v)
SELECTED
TO GIVE MAXIMUM
lRM
NO GREATER
THAN 2 A
R2: I n,IQW
NON-INDUCTIVE
OR TEN
10 n, I W,I%
CARBON
COMPOSITION
CONNECTED
IN PARALLEL
300
30
IV
1/
I
INSTANTANEOUS
2
FORWARD
.3
VOLTAGE DROP
4
(vFI-
92CS-22261
CURRENT

VOLTAGE DROP
WAVEFORM
o f\........J\.. I

VOLTAGE
DROP
FM
~I,~-!
CURRENT
92CS -22268
Fig.6 - Average forward polNer dissipation

0.rr.n-1FM
CURRENT
'I
FM
~I,~-!
92CS -22269
Fig.5 - Average forward pOlNer dissipation

VOLTAGE
DROP
SWITCHING
LOSSES NEGLECTED
WAVEFORM
o f\........J\..I
WAVEFORM

VOLTAGE
DROP
I-
0.rr.n-1FM
CURRENT
'2
WAVEFORM
~,~~
92CS-22271
92CS-22270
Fig.8 - Average forward polNer dissipation

Fig.? - Average forward power dissipation

~ 150
145
~150
140
~
!oil
~
:>
135
'"'"
i:'
'"~
~
130
060
~J~~~~i
Fg:O~ARD
SWITCHING
LOSSES
NEGLECTED
CURRENT
~
~
30
PEAK FORWARD
110
:>
~t2-1
10
120
~
;;!.
WAVEFORM
f\........J\.. I F M
~ 'II- I
115
130
'"'"
<.>
125
~ 120 0
..
FOR UNIT WITH
40
CURRENT
ro
(I FM) -
100
A
92CS-22272

92CS-22273
Fig. 10 - Maximum allowable case temperature

voltage drop.
'5
!<140
~
:>
~
..
130
120
"'~
<Xl
~
o
..
110
10
..x
:>
:>

forward voltage drop_

t-".,""",
DIMENSIONAL
JEDEC 00-4
OUTLINE
DF6C
MICAINSULATOA
:::~:~::;,~~:L1SHEO
C0:
HEATSINK
(CHASSISJ
<:=====
OF30
~~~.L~~,;~~~n~~:;~
NmG.
m~~:~~G
THICKNESS-O.OSSin
(1.40mmIMAx
AYAILAOL{ATPU8LISHEO
HAROWAREPHICES
INCHES
NR59B
~i~
SYMBOL
MIN.
INSULATOR
CONNECTOR~
AVAILA8LEAT PU8LISHEO
-AVAlLAeLEATI'U8L1SHEO
HAADwAREPRICES
H"ROW"REOOA'CES
0.250
0.020
0.065
0.51
0505
12.82
00,
0.265
0.424
6.74
10.76
0.423
0.438
10.75
F,
0.075
0.175
1.91
4.44
0.600
0.800
15.24
2.1.32
oM
N
0163
0.189
4.15
0.422
0.453
10.72
0.078
0.095
'.53
vo
~:~~~CK
NA38C
HEX.NUT
WASHER}
5UI'!'LIE."
OEYICE
N,
0.405
0060
oT
MILLIMETERS
;.1IN.
MAX
MAX.
635
1.65
11.12
'80
1150
1.98
2.41
oW
'0 32 INF.2A
'032 iNF.2A
0.002
0.050
"
0.006
0.152
1: Chamfer
or unden;:ut
on one or both
NOTES
1028
sIdes of hellagonal
base IS
ophonal.
2:
3:
Angular
or,en~t1on
and contour
01 Terminal
No.1
IS optional.
~::;~:~O~'~=:lo~:~
~;~~~E~~~:;lTread
Recommended
torque:
15 Inchpounds.
Forward Polarity
ID2412 Series)
No.1 (Lug) - Anode
Reverse Polarity,
(D2412-R Seriesl
No.2 (Stud) - Anode
OO(]3LJI]
Solid State
Division
1N3889-1N3893
1N3889R-1N3893R
12-A" 50-to-400-V,
General-Purpose Types for High-CoJrrent Applications
Features:
1N3889R, 1N3890R, 1N3891R,
1N3892R, 1N3893R
Low re,,~rserecovery current

low forward-voltage drop
low-thermal-resistance
Fast reverse-recovery time (trr) package
200 ns max. (I F = 1 A, I RM = 2 A max., see test circuit Fig. 2)
For data on other RCA fast recovery rectifiers, refer to the following
data bulletins:
hermetic
RCA

ReA types 1N3889 -
1N3893 and 1N3889R - 1N3893R are
diffusedjunction
silicon rectifiers in a studtype hermetic
package. These devices differ only in their voltage ratings.
MAXIMUM RATINGS.
Absolure-Maximum
(Blocking)
. . . ..
FORWARD CURRENT
half sine wave):
RMS IT C
(Conduction angle
choppers, high-frequency rectifiers, "free-wheel ing" diode

circuits, and other high-frequency applications
Values:
REVERSE VOLTAGE:
Repetitive
peak
Non-repetitive peak
OC
All types feature fast reverse-recovery time of 200 ns max.

These devices are intended for use in high-speed inverters
50
75
50
0.
='
100
200
300
200
200
100
Average
(TC
At junction
temperature
18
100C)
12
IT J}
150
70
50
RANGE
TEMPERATURE
Recommended
MaXimum
(DO NOT EXCEED)
*In accordance with JEDEC registration data.

Case temperature
IS
400
500
400
V
V
V
A
A
150C:

For ten cycles of applied voltage. 60 Hz
Peak (repetitive)
'OPERATING
IJUNCTIONI
STUD TORQUE:
300
180 .
= 100oCI"
300
400
measured at center of any flat surface on the hexagonal head of the mounting stud.
-65
-65
to 175
to 150
15
25
A
A
A
c
c
in-Ib
in-Ib
LIMITS
SYMBOL
CHARACTERISTIC
ALL TYPES
MIN.
UNITS
MAX.
Reverse Current:
Static
For V R RM
0, T C
TC
=
=
.... .. .
25C
.........
25
IlA
mA
mA
1.5
1.4
trr
200
ReJC
1.5
IRM
...............
100C
Dynamic
For single phase full cycle average, 10
Instantaneous
At iF
At iF
= 12
= 12
Forward
12 A, T C
100C
..........
IR(AV)
Voltage Drop:
A, VRRM
A, TJ
25C
rated value, TJ
..........
100C
....
.......
.........
. . .. ...
. .... .
.. .
VF(PK)
.. .. .
vF
V
V

For circuit
IFM
Thermal
shown in Fig. 2, at
1 A, IRM
2 A max., TC
Resistance (Junction-to-Case)
25C
.. .
.,
.. . . ......
..
........................
!lO-n
ns
C/W
OUTPUT
TO
OSCillOSCOPE .
tWITH RISE
T1MESOQljoS)
CONSTANT
VOLTAGE
SUPPLY
(ADJUST
fOR I A DC
THROUGH
RECTIFIER
UNDER TEST
-APPRQX 30 V)
'~RI
WITH RG-58U
CABLE
50-n
TERMINATING
RESISTOR AT INPUT
TERMINALS
OF OSCillOSCOPE
SELECTED
rOGlvE
lRM
NO GREATER
(APPROlCIMATElY
Ir
IF
R2
I n,IOW
10
n,
MAXIMUM
THAN
2 A
14
nl
NON-INDUCTIVE
I 'N,''I'.
CONNECTEO
CARBON
IN
OR
TEN
COMPOSITION
RESISTORS
PARALLEL
92c ZZI1'JR'
I,
IRM-
OSCILLOSCOPE
OISPLAY
OF REVERSE-RECOVERY
TIME
WITH
DIMENSIONAL
JEDEC 00-4
OUTLINE
t--,,"'""'"
OFOC
~MICAINSUlATOR
:::~:~:;;,~~:L1SHfO
HE.TSINK
"=====~.
(CHASSISl
~~~.L?~.;;~~n~~:'~
~:m~~s:~~G
OFJD
THICKNESS
"O.05Sm.
(1.40mm)
MAX
",V'l"8U",TPUBllSHEO
H ROW ..REPAIl;es
INCHES
SYMBOL
NR59B
CONNECTOR
~
~
..VA'LA8LEATPU8LISHEO
~
~
INSULATOR
..8LE ..TPU8LISHEO
MIN.
HAROWAREPRlces
HAAOWAREPRICES
~~;~
1I . ,L
0.020
.0
.0,
NR'og.
STAALOCK
NA38C
HEX.NUT
WASHER
0.265
0.423
}
SUPPLIED
DEI/ICE.
In the United Kingdom,

Europe, MIddle East, and Africa, mountinghardware policies may differ; check the availability of all items
or supplier.
F,
J
.M
0.075
0.600
0.163
0.422
.T
0.060
N
N,
.w
MAX.
0.405
0.250
0.065
0.505
0.424
0.438
0.175
0.800
0.189
0.453
0.078
0.095
11>32iNF.,.
2
2,
0.002
0.006
MILLIMETERS
MIN.
0.51
6.74
10.75
1.91
15.24
4.15
10.72
MAX.
NOTES
10.28
6.35
1.65
12.82
10.76
11.12
4.4,
20.32
4.80
11.50
1.98
'.53 2.41
'032 iNF-,.
0.050
0.152
NOTE:
1: oW's pitch diameter of COlitedthr s. AE F: Screw Thr*

St.d.rds for Federal Services, H.ndbook H 28 Pac'tI.
Recommended tOf"que: 15 inch-pound$.
Forward
Polarity
(1 N3889 -
1 N3893)
Reverse Polarity
(1 N3889R - 1 N3893R)
No.1 (Lug) - Anode
No.2 (Stud) - Anode
u~~~u ~enes
D2520-R Series
20-A, 50-to-600-V,
G,n",'~Pu,po" Typ" to' High~Cun'ntAppli"tion,

Features:

D2520A-R,
D2520B-R,
D2520C-R,
D2520D-R,
D2520F-R,
D2520M-R
time (trr) -
0.35 /1S max. (I FRM

0.2/1s max. (I RM

Low forward-voltage
drop
hermetic
package
1 A, I RM
Fig.1)
RCA D2520 series and D2520R

silicon
rectifiers
in a stud-type
series are diffused-junction

hermetic
package.
These
covery characteristics
voltage transients.
devices differ only in their voltage
ratings.
These devices are intended

inverters,
choppers,
high-frequency
rectifiers,
"free-wheel ing" diode
circuits,
D2520F
D2520A
(43899)*
(43900'*
D2520FR D2520AR
(43899RI* (43900R'*
REVERSE VOL TAGE,

Repetitive
peak
Non-repetitive
VRRM
VRSM
peak
FORWARD CURRENT
half sine wave):
and other
(Conduction
angle
50
100
100
200
that
reduce
highfrequency
D2520B
(349011*
D2520BR
(43901 R)*
applications.
D2520C
(43902'*
D2520CR
(43902R'*
200
300
100
400
of R F I and
D2520D
D2520M
(43903'*
(43904)*
D2520DR D2520M-R
(43903RI* (43904R'*
400
600
600
800
V
V
= 180,
RMS ITC " 100 c)e
IFIRMS)
30
Average IT C " 1000CIe
10
20
Peak-surge
IFSM
(non-repetitive):
At junction temperature
(T Jl = 150C:
For one-half cycle of applied voltage, 60 Hz (8.3 ms)
For other durations
Peak (repetitive)
STORAGETEMPERATURE
RANGE
OPERATING IJUNCTION) TEMPERATURE
STUD TORQUE,
Recommended
Maximum 100 NOT EXCEED)
the generation
Fig.2)
IFRM
A
A
300
See Fig.3
100
-40 to 165
A
c
150
30
50
in-lb
in-Ib
LIMITS
ALL TYPES
SYMBOL
CHARACTERISTIC
UNITS
MIN.
MAX.
0.05
~A
mA
1.4
0.35
~s
0.2
Reverse Current:
Static
For VRRM
==
= 0, TC
TC
Instantaneous
At iF
==
25C
IRM
= lOOoC
= 20 A, T J = 25C.
vF

IFM
= 63 A, -diF/dt = 25 A/~s,
= 7.5 ~s, TC = 25C
pulse duration
t"

I FM
Thermal
= 1 A, I RM = 2 A max., T C = 25C.
Resistance (Junction-ta-Case)
ROJC
RCA
IN3194
OR
RCA
012018
RECTIFIER
UNDER TEST
AMPLITUDE
0-130 V
AC
501NI}
RM
O.IINll
50-a OUTPUT
TO OSCILLOSCOPE
(WITH
RISE
TIME :S 0.01 fLS)
TRIGGER
SIGNAL
TO
OSCILLOSCOPE
NOTES:
ALL
RESISTANCE
RM : MONITORING
'* ** UNITS
ADJUST
VALUES
ARE
IN OHMS.
RESISTOR
FOR CURRENT
C/W
WAVEFORM
INTERCONNECTED
WITH
50-0
TERMINATING
RESISTOR
TERMINALS
OF OSCilLOSCOPE.
SHOWN
RG - 58U CABLE
AT INPUT
AT LEFT
WITH
'*
50-a OUTPUT
TO OSCILLOSCOPE**
(WITH RiSE
TIME:SO.OI ~S)
30 V DC
(CONSTANT
SUPPLY)
CONSTANT
VOLTAGE SUPPLY
(ADJUST
FOR I A DC
THROUGH RECTIFIER
UNDER TEST -APPROX.
VOLTAGE
WITH RG-58U
CABLE
50-a
TERMINATING
RESISTOR AT INPUT
TERM I NALS OF OSCILLOSCOPE
RI

IRM
NO GREATER THAN Z A
R2
In,
10 W NON-I NDUCTIVE OR TEN
10 n, I W, 1% CARBON COMPOSITION
(APPROXIMATELY
30 V)
WITH
1.4 n)
RESISTORS
IR
OSCILLOSCOPE
350
;;;
..
JUNCTION
DISPLAY
OF REVERSE-RECOVERY
TEMPERATURE
(TJ):
.J\..f\..
300
~1250
~~
1:; .
Cf;: 200
ZZ
ow
z'"
~~
150
"I
:u.
8.3ms
"- ......
1000 JUNCTION
6
I-
100
i:'i
100
wo
"'""-
10
Ii'
~
"
":;;;;,:
I
IZ
50
6
4
0
2
/
'/
'""
'"=>
10--.. MAXIMUM
TyPiCAL
--
{TJ )=25C
~~
~:t
TEMPERATURE
'"'"
13
"'u
..
150C
TIME
0.1
III
I
INSTANTANEOUS
2
3
4
FORWARD VOLTAGE DROP {vF)-V
92C5-22181
FigA - Forward current

voltage drop.
vs. forward
~
I
!30
..

VOLTAGE DROP
URRENT
~z
~I
WAVEFORM
-t'.~-l
~
~ 25
~
in
jjl
u> 20
i5 20
a:
30-A(RMS)
LIMIT
o~t:J
<;
a:
15
o~
40
60
PEAK FORWARD
80
100
CURRENT
120
(I FM) -
140
160
15
40
180
PEAK
60
FORWARD

VOLTAGE
DROP
80
100
120
140
160
180
CURRENT
(IFM)
92CS-22182

forward voltage drop_
FOR UNIT WITH TYPICAL FORWAR

VOLTAGE
DROP
i 60
cE
~~~T~~~
~ 60
a:
i
'" .
~ 3
z
50
~
jjl
A
92CS-22183-

WAVEFORM
O~IFM
~30
-t't~j
25
CURRENT
O~IFM
W~~~pMAXIMUM
SWITCHING
LOSSES
FORWARD
NEGLECTED
50
onnCURRENT
WAVEFORM
IFM
~.~~
in
40
o
a:
..
30-A IRMS)
LIMIT
20
40
PEAK
60
80
tOO
120
140
160
180
FORWARD CURRENT (IFM)-A

92C5-22184
92CS-221~5
Fig. 7 - Average forward PO'rNefdissipation

fOR UNIT WITH TYPICAL
FORWARD
VOLTAGE
DROP
SWITCHING
LOSSES NEGLECTED
DUn_
F"~C7i

lr(
~
~

VOLTAGE
DROP
150 SWITCHING LOSSES NEGLECTED
i:!
0" (
"/12)"'0.0,5
140
~
;
130
;'l
w
Oil
120
125
gilD
CURRENT
oJ
WAVEFORM
'"
'"x
'"
:>
120~
115
-1 " I- I
~t-1
w
PEAK
60
FORWARD
00
100
120
CURRENT (IFM) - A
100
9ZCS-22187
92CS- 22186

Fig.
to -
Maximum allowable case temperature

voltage drop.
Orrn-1FM
!;'
CURRENT
~
....
'"'"
;3
'"-'m
'"'"
<.>
'"cr:
'"<r
--h
"
~
~
j
'2
0.05
I
-I
f--
<{
CURRENT
WAVEFORM
~,~~
<{
,.
<{
tlO
110
<{
:>
=>
:>
X
:>
orrn-1FM
!;'
WAVEFORM
~
'"
~
~
~
....
:>
=>
:>
X
100
<{
100
<{
90
90
20
40
PEAK
60
80
100
FORWARD CURRENT
120
140
160
180
(In.1)-A
92CS-22189
92CS-22188
Fig.1T - Maximum allowable case temperature


DIMENSIONAL
JEDEC 00-5
SYMBOL
INCHES
MIN.
MAX.
MilLIMETERS
MIN.
MAX.
0.375
0.030
0.080
0.77
0.794
0.667
16.94
0.669
0.688
17.00
17.47
F,
0.115
0.200
0.750
1.000
"D
oD,
In the United Kingdom, Europe, Middle East, and Africa, mountinghardware policies may differ;
check the availability
of all Items
or supplier.
OUTLINE
0.450
9.52
2.93
5.08
19.05
0.220
0.249
5.59
6.32
0.422
0.453
10.72
11.50
N,
0.090
2.28
0.156
3.97
oT
0.140
0.175
3.56
"
1/4-28
UNF 2A
0.002
0.006
4.44
1/4-28
25.40
2.03
20.16
OM
OW
NOTES
'1.43
UNF 2A
0.050
0.152
NOTES:
1: Chamfer or undercut on one or both Sides of hexagonal base is
optional
2: Angular orientation
and contour of Terminal No.1 is optional.
3: oW ISpitch diameter 01 coated threads. REF: ScrewThread

Standards for Federal Services. Handbook H 28 Part I
Recommended torque: 30 inchpounds.
Forward Polarity
(02520 Series)
No.1 (Lug) - Anode
Reverse Polarity
(02520-R Series)
No.2 (Stud) - Anode
OOa5LJD
Solid State
Division
1N3899-1N3903
1N3899R-1N3903R
20-A. 50-to-400-V,
General-Purpose Types for High-Current Applications
Features:
Available in reverse-polarity
versions:
1 N3899R, 1 N3900R, 1 N3901 R,
1N3902R,1N3903R
Reverse-polarity
11N3899R-1 N3903R)
For data on other

data bulletins:
JEoEC 00-5
ReA
types
1 N3899-1
N3903
and
1N3899R-l
N3903R
1 A, I RM

rectifiers,
Series)
12-A File No. 664 (02412
Series)
20-A File No. 665 (02520

40A File No. 580 (02540
Series)
Series)
are
Fig. 2)
refer to the following
6-A File No. 663 (02406
diffused-junction
silicon
rectifiers
in a stud-type
hermetic
package_ These devices differ only in their voltage ratings.
RCA fast recovery
current
Low forward-voltage
drop
Lowthermalresistance
hermetic
package
time (trr) -
200 ns max. (I RM
Forward-polarity
I1N38991 N39031
RCA
All types feature

fast reverse-recovery
time of 200 ns max.
inverters,
choppers.
high-frequency
rectifiers,
"free-wheeling"
diode
circuits, and other high-frequency
applications
Values:
REVERSE VOLTAGE:
*Repetitive peak '." ....................
Non-repetitive peak
*OClBlockingl
FORWARD CURRENT (Conduction
half sine wave):
RMS IT C = 100 C)o
.~ Average (T C = 100 CI
50
75
.
100
200
100
50
200
300
200
300
400
300
400
500
400
V
V
V
angle'" 180,
-30
0
At junction
temperature
IT Jl = 150 C:
For ten cycles of applied voltage, 60 Hz
Peak (repetitive)
.........
RANGE
'OPERATING
IJUNCTION) TEMPERATURE
STUD TORQUE:
20
A
A
225
120
100
-65 to 175
-65 to 150
A
A
A
c
c
*Recommended
30
Maximum 100 NOT EXCEED) .
50
*In accordance
Case
temperature
with JEDEC
registration
is measured
at center
data.
of any flat surface
on the hexagonal
stud.
in-Ib
in-Ib
MIN.
MAX.
Reverse Current:
Static
For VRRM
max ..rated value, IF
0, TC
TC
=
=
25C
100C
............. .. .
. . . .. . . . . . ... ..
50
IlA
mA
IR(AV)
10
mA
VFIPK)
IRM
Dynamic
For single phase full cycle average, 10 = 20 A, T C
Instantaneous
At iF
At iF
=
=
Forward
100C
..........
Voltage Drop:
20 A, VRRM ,. rated value, TJ

20 A, T J
25 C
........
100C
..................
.. ........................
25C
1.5
1.4
vF
trr
200
ns
1.5

For circuit
IFM
Thermal
shown in Fig. 2, at
1 A, I RM
2 A max., TC
Resistance IJunction-toCase)
..................
.........
- ..............
.. .
.. .
ROJC
~O-Q
OUTPUT
C/W
TO
OSCILLOSCOPE
(WIlH
RiSE
TIME:!: 0.01 ,.SJ
CONSTANT
VOLTAGE
SUPPLY
(ADJUST
fOR I A DC
THROUGH
RECTIFIER
UNDER TEST
-APPROX.
30 V J
'~Rl
WITH RG-58U
CABLE
50-a
TERMINATING
RESISTOR
AT INPUT
TERMINALS
Of OSCILLOSCOPE
SELECTED
TO GIVE MAXIMUM
:rRM NO GREATER
THAN 2 A
{APPROXIMATELY
IF
o
tft
R2
I n,lOW
10 n,
CONNECTED
I.
I.M--
14 QJ
NOH-INDUCTIVE
I W, 1"Ko CARBON
IN
PARALLEL
OR
TEN
COMPOSITION
RESISTORS
WITH
DIMENSIONAL
JEDEC 00-5
OUTLINE
,"",""'""
@)- ~~~:
INSULATOR
,,""'A'lA'LEATPU8lISHfD
H ROWA,AEPRICES
GJ
----0
(~~:~~~~K
0----
DF6B
MICA
INSULATOR
.v t .
aLEAT
PU8L1SHED
OF3H
TEFLON'
INSULATING
BUSHING
$H~C~~':~ ~nO~g6~oi;;711.53
mm) MAX
a.VAll"llEA,rpU8LISHED
INCHES
SYMBOL
HA,AOW"REPRICES
HAROWA,REPl'UCES
MAX,
MIN.
0.450
0.375
0.080
0.794
0.667
0.688
0.200
0.030
00
00,
~~~~CTOA~
"V,",'l
@.--
eUATPU8lISH[O
~~~~O~ASHER
SUPPLIED
"
J
~--NA38B
~-
DEvICE
oM
HEX,NUT
N
N,
S
oT
In the United Kingdom, Europe, .tv1lddle East, and Africa,

hardware
policies
shown with your
may
ReA
differ;
check
the availability
or supplier.
of
OW
Z
Z,
mountingall
items
MILLIMETERS
MIN.
0.669
0.115
0.750
0.220
0.422
17.00
2.93
19.05
5.59
10.72
'.000
0.249
0.453
0.090
0.156
0.140
0.115
3.91
3.56
NOTES
11.43
0.77
1I...iUNF2A
0.002
0.006
MAX.
9.52
2.03
20.16
16.94
17.47
5.08
25.40
6.32
11.50
2.28
4.44
1/4TUNF 2A
0.050
0.152
NOTE
1
W IS pilCh diameter of coed threads. REF: SCre..

Thread
Standards tor Federal Services, Hal'ldbook H 28 Part I
Reeommended torque: 30 inchpounds.
TERMINAL
CONNECTIONS
Forward Polarity
(1 N3899-1N3903)
Reverse Polarity
(lN3899R -lN3903R)
No.1 (Lug) - Anode

NO.1 (Lug) - Cathode

NO.2 (Stud - Anode
[]1(]5LJD
Solid State
Division
1N3909-1 N3913
1N3909R-1N3913R
30-A, 50-to-400-V,
General-Purpose
Types for High-C'Jrrent
Applications
Features.-
Forward-polarity
11N3909-1 N39131
1N3909 -
types
package.
1N3912R,1N3913R
package
For data on other
JEOEC 00-5
ReA
Low forward-voltage
1N3913 and 1N3909R -1N3913R

rectifiers
in a stud-type
These devices differ only in their voltage
1 A, I RM
RCA fast recovery
data bulletins:
silicon
time (trr) -
200 ns max_ (I RM
Reverse-polarity
I1N3909R-1N3913R)
diffused-junction
Available in reverse-polarity
versions:
1N3909R,
1N3910R,
1N3911R,

rectifiers,
6-A File No. 663 (02406
Series)
Series)
Series)
ratings.
RCA
Series)
12-A File No. 664 (02412
are
hermetic
Fig. 2)
refer to the following
20-A File No. 665 (02520

40-A File No. 580 (02540
hermetic
current
drop
All types feature

fast reverse-recovery
time of 200 ns max.
for use in highspeed
inverters,
choppers,
high-frequency
rectifiers,
"free-wheeling"
diode
circuits, and other high-frequency
applications
REVERSE VOI_TAGE,
*Repetitive
peak ","
Non-repetitive peak
*DC
(Blocking)
...
FORWARD CURRENT
half sine wave):
RMS IT C
*
*
50
75
(Conduction
angle
=.
50
100
200
100
200
300
200
V
V
V
= 100 CI'
'OPERATING
(JUNCTION)
STUD TORQUE,
45
30
A
A
300
160
A
A
A
125
-65 to 175
-65 to 150
RANGE
TEMPERATURE
30
50
*In accordance with JEOEC
temperature
400
500
400
180,
Average IT C = , aOoC)'"
Peak-surge lnon-repetitive>:
At junction temperature IT}:- 150C:
For ten cycles of applied voltage. 60 Hz
Peak (repetitive)
Case
300
400
300
registration
is measured
at center
data.
of any flat surface
on the hexagonal
stud.
c
c
in-Ib
in-Ib
LIMITS
SYMBOL
CHARACTERISTIC
UNITS
ALL TYPES
MIN.
MAX.
80
/lA
10
mA
IRIAV)
15
mA
VF(PK)
Reverse Current:
Static
For V R RM ~ max. rated value, I F ~ 0, T C
TC
=
=
................
25C
IRM
... . ...........
100C
Dynamic
For single phase full cycle average, 10
Instantaneous
At iF
At iF
=
=
Forward
..........
30 A, T C
...............
100C
Voltage Drop:
30 A, VRRM
30 A, T J
rated value, TJ
100C
25 C ...............
. .. . .....
vF
1.5
1.4
...
- . ..
trr
200
ns
ReJC
.. .
_.0

IFM
Thermal
1 A, IRM
2 A max., TC
Resistance IJunction-to-Case)
25C
.....
.................
. . - . .. .
.........
.....
50 -
C/W
OUTPUT
TO
OSCillOSCOPE"
(WITH RiSE
TlME'5001,.SI
CONSTANT
VOLTAGE
SUPPLY
{ADJUST
FOR I A DC
THROUGH
RECTIFIER
UNDER TEST
-APPRQX 30 v J
'~RI
WITH FlG-SSU CABLE
50-a
TERMINATING RESISTOR AT INPut
TERMINALS
OF OSCillOSCOPE
SELECTED
rOGIVE
IRM
NO GREATER
(APPROXIMATELY
IF
'..
R2
MAXIMUM
THAN
2 A
14
nl
I n,IOW
NON-INDucnve:
OR TEN
10
I W,I%
CARBON COMPOSITION
n,
CONNECTED
RESISTORS
IN PARALLEL
92(101-22179111
IRM-
IR
OSCILLOSCOPE
DISPLAY
OF REVERSE-RECOVERY
TIME
WITH
----------------------File
1-
No.
7?~
<j>W
"
INCHES
MIN
MAX
MIN
MAX.
0.50
0375
11.43
0.030
ooeo
071
0194
0667
2.03
2016
066.
0.115
0750
0688
11.00
0200
, 000
293
1905
0249
559
1072
vD
,.D,
,
"
,M
N
0220
0422
N,
S
..-,1
mounting
hardware.
0453
'694
17.47
508
25.40
6.32
1150
0090
i56
0140
397
0175
3.56
'.44
2.28
OOSO
2,
0.152
1/4'j
0006
NOTES
9.52
1I4'2iUNF 2A
0002
"W
Fig. 3 - Suggested
MILLIMETERS
SYMBOL
UN' 2A
NOTE
1
oW,~
pitch
d,ameter
of coated
threads
Siandard$
for Federal ServICes, Handbook
Recommended
torque: 30 ,nchpounds
Forward
Polarity
(lN3909
-lN3913)
NO.1 (Lug) - Anode

REF:
H 28
Screw-Thread
Pa'l
Reverse Polarity
(1 N3909R -
1N3913R)
NO.1 (Lug) - Cathode

No.2 (Stud) - Anode
DDJ]sLlD
Solid State
Division
02540 Series
02540-R Series
40-A, 50- to- 600 V,
Fast- Recovery
Silicon Rectifiers
,
I
Cathode
Forward-polarity
Reverse-polarity
(02540 Series)
(0254D-RSeries)

D2540A-R, D2540B-R, D2540D-R,
D2540F-R,
JEDEC 005
D2540MR

Low forward-voltage drop
Low-thermal-resistance hermetic package
time -
0.35 I./smax. from 125 A peak

RCA D2540 series and D2540-R seriest inclusive, are
diffused-junction-type
silicon rectifiers in a stud-type hermetic
package. These devices differ
only
in their
voltage
ratings.
All
These devices are intended for use in high-speed inverters,

choppers,
high-frequency
rectifiers,
"free-wheeling"
diode
circuits, and other high-frequency applications.
types feature fast reverse-recovery time (0.35 I./S max.
from 125 A peak) with "soft"
recovery characteristics that
D2540F
(40956)*
D2540F-R
(40956R)*
Repetitive peak
Non-repetitive peak.
VRSM
50
100
IF(RMS)
10
VRRM
D2540A
(40957)*
D2540A-R
(40957R)*
D2540B
(40958)*
D2540B-R
(40958R)*
100
200
300
200
FORWARD CURRENT (Conduction angle = 180~

half sine wave):
RMS (TC = 1000CI-
............
Average (T C = 1OOOC)-
D2540D
(R0959)*
D2540D-R
(40959R)*
D2540M
(40960)*
D2540MR
(40960R)*
400
600
600
800
..
60
40
..
700
195
..
..
A
A
At junction temperature (TJ) = 1500C
For one-half cycle of applied voltage, 60 Hz
(8.3 ms)
Peak (repetitivel
TEMPERATURE RANGE:
Storage and Operating (Junction)
IFSM
IFRM
40 to 150
A
A
C
LIMITS
SYMBOL
CHARACTERISTIC
ALL TYPES
MIN.
MAX.
UNITS
Reverse Current:
Static
For VRRM
0, TC
TC
Instantaneous
At iF
Forward
100 A, TJ
ReverseRecovery
For circuit
At I FRM
TC
Thermal
25C,
100
i.J.A
IRM
2.5
mA
vF
1.8
trr
--
0.35
ROJC
0.9
25C
100C
Drop:
See Figure 2.
Time:
shown
Voltage
=
=
in Figure 1:
125 A, dildt
25 A/i.J.s, pulse duration
15 i.J.S
25C
Resistance
(JunctiontoCasel
i.J.S
C/W
1:3~:4n
2.25 p.H"*
OR
RC A
012018
AMPLITUDE
RECTIFIER
UNDER TEST
133}<F
O-130V
AC
5O(NIl
RM
ReA
D260lN
OIlNll
50-n OUTPUT
TO OSCILLOSCOPE
(WITH RiSE
TIME :s: 0.01 fLS)
TRIGGER
SIGNAL
TO
OSCILLOSCOPE
NOTES
**
ALL
RESISTANCE
VALUES
RM
MONITORING
RESISTOR
ARE IN OHMS
WITH
50-n
TERMINATING
RESISTOR
TERMINALS
OF OSCillOSCOPE.
RG -58U
CABLE
AT INPUT
WITH
**
I
..
.....
I'
CA5IE
n_RT.-
TJ"
v J.....-r
MAXIMUM
TYPICAL/
100
f.
II
a
Ii!
~
~
il
1/
10
!
i
CURRENT
WAVEFORM
OJ\.JC.FRM
jt~f-L
OJ
INSTANnNEOUS
100
200
300
PEAK FORWARD CURRENT (IFRM )-A
400
FORWAROVOLTAGE DROP hF)-V

921:5-19186
Fig.3-Average forward-power dissipation for

maximum forward-voltage-drop unit.
FOR MAXIMUM
FORWARD-VOLTAGE-DROP
SWITCHING
lOSSES
NEGLECTED
CU
UNIT
NW
..IU"" -{ F'"
o
"
CURRENT
lJ
'2
WAVEFORM
OJ\.JC.FRM
Id- I
PEAK
tOO
FORWARD
2DO
CURRENT
(I FRM)
X)()
- A
400
FOR TYPICAL FORWARD-VOLTAGE-DROP

UNIT SWITCHIHG LOSSES NEGLECTED
CURRENT
WAVEFORM
0J1...J -IF.'"
~t\';j..
<t.~'i'
o
0,.
200
PEAk
FORWARD CURRENT
tOO
300
t I FRWI
PEAK
FORWARD
200
CURRENT
OJ\.JC.FRM
t~L
300
(IFRM)-It
400
CURRENT
WAVEFORM
0JU""
IFRM
t,~.I-L
300
400
IIF) -A
92CS-t9t93RI
92CS-19192RI
Fig.8-Maximum
for tvpical forward-voltage-drop unit.
~
~
-'
'";
allowable
case temperature
for maximum forwardvoltagedrop
unit.
70
..
00
~
~
20
Fig.9-Maximum
::J
o .~
."J
.~".
CURRENT
WAvmlIIII
.~
oJ'1I
-IF'"
~1r.1-
K>O
200
300
4CX)
PEAf( FORWARDCURRENT (IF,..)-A
"forward Polarity
(02540 Series)
Reverse Polarity
(02540-R Seri'os)
No.1 (Lugl - Anode


No,2 (Stud I - Anode
MILLIMETERS
INCHES
YMBOl
MIN.
A
b
.0
E
F
F,
J
I
.M
1 Completl t"'reads to extend to wil"'in 2-112 t"'reads 01 sealing

pl;tne.
2. Afl9.llar ()(ientltion olt"'e tll'"minal is undelined.
3. 1/4-28 UNF-2A. Maximum pitc'" diameler of plaled t"'readss"'al!
be basic pilC'" diametll'" 1.2268 inc..5.14 mm) ref. (screw t"'read
mndards for Fecletal Services 1951) H;tndbook H28 1951 PI
4. Minimumftat
.'
N
0.667
0.115
0.060
MIN.
MAX
0450
0.315
0.080
0.667
0.687
0200
16.94
2.92
1.52
1.000
0.156
0.220
0.422
0.140
3."
5.59
10.12
0.249
0.453
0.175
1/4-28 UNF 2A
MAX.
n.4
9.53
2.03
16.94
17.45
5j08
NOTES
2
25.40
6.32
11.51
4.45
3."
1/4-28 UNF 2A
4
1
1,3
Diacs
oornLJD
Solid State
Division
D3202Y
D3202U
Plastic-Packaged Two-Terminal Trigger Devices for

Applications in Military, Industrial, and Commercial Equipment
For critical triggering applications requiring narrow breakover

voltage range (29-35V)-D3202Y
Typical breakover voltage: V(BO)
Low breakover current (at breakover voltage): I(BO) = 251lA max.
High peak pulse current capability
Breakover voltage symmetry:

\+V(BO) I-I-V(BO)
RCA
D3202Y
diffused,
(45411)'
and D3202U
threelayer, two-terminal
(45412)'
are all-
devices in an axial-lead
plastic package designed specifically for triggering thyristors.

Both units exhibit
teristics.
These
diacs
circuits for
are
bidirectional
intended
for
lamp-dimming,
negative-resistance charac
use in thyristor
universal-motor
phase-control
speed control,
and heat controls. Their small size and plastic package of

high insulation resistance make these diacs especially suitable
for
applications
employed.
in
which
high
packing
densities
are
32 V
I= 3 V max.
MAXIMUM
RA TI NGS, Absolute-Maximum
DEVICE DISSIPATION:
At case temperature up to 400C
At case temperatures above 40o'C
TEMPERATURE
Values:
Derate 0.016
RANGE:
Storage
Operating (Junction)
LEAD TEMPERATURE
At distance.2: 1/16
-40 to +150
-40 to +100
(During Soldering)
in. (1.59 mml from case
for 10 s max.
.1 W
WloC
0.02
0.04
TRIGGERING
0.06
CAPACITANCE
o.oe
0.1
ICT)-~F
.rC:S-20101
LIMITS
CHARACTE
TEST CONDITIONS
SYMBOL
R ISTI C
D3202Y
MIN.
Breakover Voltage
(Forward or Reverse)
MIN.
MAX.
29
35
25
40
190
190
mA
V(BO)
Breakover Voltage
I +V(Bo)I-I-V(BOI!
Symmetry
UNITS
D3202U
MAX.
Peak Output Current

(See Figs. 2, 3, & 5.l
ipk
VSUPPL Y = 30 VRMS,
CT=O.I/lF,
RL = 20 Do
Peak Breakover Current
I(BO)
At breakaver voltage
25
25
/lA
!'>V
VSUPPL Y = 30 VRMS,
CT = 0.1 /IF
RL = 20 Do
60
60
C/W
Dynamic
Breakback
Voltage
Thermal
Impedance
IOJA
Junction-to-ambient
OUTPUT
~
~
z
~
I.
I.'
''"""
~
"~
"~
..
WIDTH
1.2
~O~.
(Tel
~40C
I.
SAFE
OPERATING
SINUSOIDAL
AREA
.~~~.
~
~
'"..
PULSE
CASE TEMPERATURE
0 .
SQUAR1E
0.'
WAVE
0 .
0.2
-.
WAvE
"
DIMENSIONAL
OUTLINE
D3202Y & D3202U
FOR TYPES
JEDEC DO-15
INCHES
MilLIMETERS
SYMBOL
MIN
"
.0
G
0.027
0.104
0.230
1.000
I,
MAX
0035
0140
0.300
0050
MIN
0.686
2.64
5.84
25.40
MAX
0.889
3.56
7.62
1_27
Application Notes
Solid State Devices
OOClliLm
Solid State
Division
Operating Considerations
1CE-402
Operating Considerations for

RCA Solid State Devices
Solid state devices are being designed into an increasing

variety of electronic equipment because of their high
standards of reliability and performance. However, it is
essential that equipment designers be mindful of good
engineering practices in the use of these devices to achieve
the desired performance.
This Note summarizes important operating recommendations and precautions which should be followed in the
interest of maintaining the high standards of performance of
solid state devices.
The ratings included in RCA Solid State Devices data
bulletins are based on the Absolute Maximum Rating
System, which is defined by the following Industry Standard
(JEDEC) statement:
Absolute-Maximum Ratings are limiting values of operating and environmental conditions applicable to any electron
device of a specified type as defined by its published data,
and should not be exceeded under the worst probable
conditions.
The device manufacturer chooses these values to prOVide
acceptable serviceability of the device, taking no responsibility for equipment variations, environmental variations, and
the effects of changes in operating conditions due to
variations in device characteristics.
The equipment manufacturer should design so that
initially and throughout life no absolute-maximum value for
the intended service is exceeded with any device under the
worst probable operating conditions with respect to supplyvoltage variation, equipment component variation, equipment control adjustment, load variation, signal variation,
environmental conditions, and variations in device characteristics.
It is recommended that equipment manufacturers consult
RCA whenever device applications involve unusual electrical,
mechanical or environmental operating conditions.
GENERAL
CONSIDERATIONS
The design flexibility provided by these devices makes

possible their use in a broad range of applications and under
many different operating conditions. When incorporating

these devices in equipment, therefore, designers should
anticipate the rare possibility of device failure and make
certain that no safety hazard would result from such an
occurrence.
The small size of most solid state products provides
obvious advantages to the designers of electronic equipment.
However, it should be recognized that these compact devices
usually provide only relatively small insulation area between
adjacent leads and the metal envelope. When these devices
are used in moist or contaminated atmospheres, therefore,
supplemental protection must be provided to prevent the
development of electrical conductive paths across the
relatively small insulating surfaces. For specific information
on voltage creepage, the user should consult references such
as the J EDEC Standard No. 7 "Suggested Standard on
Thyristors," and JEDEC Standard RS282 "Standards for
Silicon Rectifier Diodes and Stacks".
The metal shells of some solid state devices operate at the
collector voltage and for some rectifiers and thyristors at the
anode voltage. Therefore, consideration should be given to
the possibility of shock hazard if the shells are to operate at
voltages appreciably above or below ground potential. In
general, in any application in which devices are operated at
voltages which may be dangerous to personnel, suitable
precautionary measures should be taken to prevent direct
contact with these devices.
Devices should not be connected into or disconnected
from circuits with the power on because high transient
voltages may cause permanent damage to the devices.
In common with many electronic components, solid-state

devices should be operated and tested in circuits which have
reasonable values of current limiting resistance, or other
forms of effective current overload protection. Failure to
observe these precautions can cause excessive internal heating
of the device resulting in destruction and/or possible
shattering of the enclosure.
TRANSISTORS WITH FLEXIBLE LEADS

Flexible leads are usually soldered to the circuit
elements. It is desirable in all soldering operations to provide
some slack or an expansion elbow in each lead, to prevent
excessive tension on the leads. It is important during the
soldering operation to avoid excessive heat in order to
prevent possible damage to the devices. Some of the heat can
be absorbed if the flexible lead of the device is grasped
between the case and the soldering point with a pair of pliers.
TRANSISTORS WITH MOUNTING FLANGES
The mounting flanges of JEDEC- type packages such as
the TO-3 or TO-66 often serve as the collector or anode
terminal. In such cases, it is essential that the mounting
flange be securely fastened to the heat sink, which may be
the equipment chassis. Under no circumstances, however,
should the mounting flange be soldered directly to the heat
sink or chassis because the heat of the soldering operation
could permanently damage the device.
Such devices can be installed in commercially available
sockets. Electrical connections may also be made by
soldering directly to the terminal pins. Such connections may
be soldered to the pins close to the pin seals provided care is
taken to conduct excessive heat away from the seals;
otherwise the heat of the soldering operation could crack the
pin seals and damage the device.
During operation, the mounting-flange temperature is
higher than the ambient temperature by an amount which
depends on the heat sink used. The heat sink must have
sufficient thermal capacity to assure that the heat dissipated
in the heat sin k itself does not raise the device moun tingflange temperature above the rated value. The heat sink or
chassis may be connected to either the positive or negative
supply.
[n many applications the chassis is connected to the
voltage-supply terminal. If the recommended mounting
hardware shown in the data bulletin for the specific
solid-state device is not available, it is necessary to use either
an anodized aluminum insulator having high thermal conductivity or a mica insulator between the mounting-flange
and the chassis. [f an insulating aluminum washer is required,
it should be drilled or punched to provide the two mounting
holes for the terminal pins. The burrs should then be
removed from the washer and the washer anodized. To insure
that the anodized insulating layer is not destroyed during
mounting, it is necessary to remove the burrs from the holes
in the chassis.
It is also important that an insulating bushing, such as
glass-filled nylon, be used between each mounting bolt and
the chassis to prevent a short circuit. However, the insulating
bushing should not exhibit shrinkage or softening under the
operating temperatures encountered. Otherwise the thermal
resistance at the interface between transistor and heat sink
may increase as a result of decreasing pressure.
PLASTIC POWER TRANSISTORS AND THYRISTORS
RCA power transistors and thyristors (SCR's and triacs)
in molded-silicone-plastic packages are available in a wide
range of power-dissipation ratings and a variety of package

configurations. The following paragraphs provide guidelines
for handling and mounting of these plastic-package devices,
recommend forming of leads to meet specific mounting
requirements, and describe various mounting arrangements,
thermal considerations, and cleaning methods. This information is intended to augment the data on electrical characteristics, safe operating area, and performance capabilities in the
technical bulletin for each type of plastic-package transistor
or thyristor.
Lead-Forming Techniqup.s
The leads of the RCA VERSAWATT in-line plastic
packages can be formed to a custom shape, provided they are
not indiscriminately twisted or bent. Although these leads
can be formed, they are not flexible in the general sense, nor
are they sufficiently rigid for unrestrained wire wrapping
Before an attempt is made to form the leads of an in-line
package to meet the requirements of a specific application,
the desired lead configuration should be determined, and a
lead-bending fixture should be designed and constructed. The
use of a properly designed fixture for this operation
eliminates the need for repeated lead bending. When the use
of a special bending fixture is not practical, a pair of
long-nosed pliers may be used. The pliers should hold the
lead firmly between the bending point and the case, but
should not touch the case.
When the leads of an in-line plastic package are to be
formed, whether by use of long-nosed pliers or a special
bending fixture, the folloWing precautions must be observed
to avoid internal damage to the device:
I.
2.
3.
4.
5.
Restrain the lead between the bending point and the

plastic case to prevent relative movement between the
lead and the case.
When the bend is made in the plane of the lead
(spreading), bend only the narrow part of the lead.
When the bend is made in the plane perpendicular to that
of the leads, make the bend at least 1/8 inch from the
plastic case.
Do not use a lead-bend radius of less than 1/16 inch.
Avoid repeated bending of leads.
The leads of the TO-220AB VERSAWATT in-line

package are not designed to withstand excessive axial pull.
Force in this direction greater than 4 pounds may result in
permanent damage to the device. If the mounting arrangement tends to impose axial stress on the leads, some method
of strain relief should be devised.
Wire wrapping of the leads is permissible, provided that
the lead is restrained between the plastic case and the point
of the wrapping. Soldering to the leads is also allowed. The
maximum soldering temperature, however, must not exceed
2750C and must be applied for not more than 5 seconds at a
distance not less than 1/8 inch from the plastic case. When
wires are used for connections, care should be exercised to
assure that movement of the wire does not cause movement
of the lead at the lead-to-plastic junctions.
The leads of RCA molded-plastic high-power packages

are not designed to be reshaped. However, simple bending of
the leads is pe,mitted to change them from a standard
vertical to a standard horizontal configuration, or conversely.
Bending of the leads in this manner is restricted to three
90-degree bends; repeated bendings should be avoided.
Mounting
Recommended mounting arrangements and suggested

hardware for the VERSA WAIT transistors are given in the
data bulletins for specific devices and in RCA Application
Note AN-4124. When the transistor is fastened to a heat sink,
a rectangular washer (RCA Part No. NR231 A) is recommended to minimize distortion of the mounting flange.
Excessive distortion of the flange could cause damage to the
transistor. The washer is particularly important when the size
of the mounting hole exceeds 0.140 inch (6-32 clearance).
Larger holes are needed to accommodate insulating bushings;
however, the holes should not be larger than necessary to
provide hardware clearance and, in any case, should not
exceed a diameter of 0.250 inch.
Flange distortion is also possible if excessive torque is
used during moun ting. A maximum torque of 8 inch-pounds
is specified. Care should be exercised to assure that the tool
used to drive the mounting screw never comes in contact
with the plastic body during the driving operation. Such
contact can result in damage to the plastic body and internal
device connections. An excellent method of avoiding this
problem is to use a spacer or combination spacer-isolating
bushing which raises the screw head or nu t above the top
surface of the plastic body. The material used for such a
spacer or spacer-isolating bushing should, of course, be
carefully selected to avoid "cold flow" and consequent
reduction in mounting force. Suggested materials for these
bushings are diallphtalate, fiberglass-filled nylon, or fiberglass-filled polycarbonate. Unfilled nylon should be avoided.
Modification of the flange can also result in flange
distortion and should not be attempted. The transistor
should not be soldered to the heat sink by use of lead-tin
solder because the heat required with this type of solder will
cause the junction temperature of the transistor to become
excessively high.
The. TO220AA plastic transistor can be mounted in
commercially
available TO-66 sockets, such as UID
Electronics Corp. Socket No. PTS4 or equivalent. For
testing purposes, the TO-220AB in-line package can be
mounted in a Jetron Socket No. DC74-104 or equivalent.
Regardless of the mounting
method,
the following
precautions should be taken:
1. Use appropriate hardware.
2. Always fasten the transistor to the heat sink before the
leads are soldered to fixed terminals.
3. Never allow the mounting tool to come in contact with
the plastic case.
4. Never exceed a torque of 8 inch-pounds.
5. Avoid oversize mounting holes.
6. Provide strain relief if there is any probability that axial
stress will be applied to the leads.
7. Use insulating bushings to prevent hot-creep problems.

Such bushings should be made of diallphthalate, fiberglass-filled nylon, or fiberglass-filled polycarbonate.
The maximum allowable power dissipation in a solid
state device is limited by the junction temperature. An
important factor in assuring that the junction temperature
remains below the specified maximum value is the ability of
the associ~ted thermal circuit to conduct heat away from the
device.
When a solid state device is operated in free air, without a
heat sink, the steady-state thermal circuit is defined by the
junction-to-free-air thermal resistance given in the published
data for the device. Thermal considerations require that a
free flow of air around the device is always present and that
the power dissipation be maintained below the level which
would cause the junction temperature to rise above the
maximum rating. However, when the device is mounted on a
heat sink, care must be taken to assure that all portions of
the thermal circuit are considered.
To assure efficient heat transfer from case to heat sink
when mounting RCA molded-plastic solid state power
devices, the following special precautions
should be
observed:
I. Mounting torque should be between 4 and 8 inchpounds.
2. The mounting holes should be kept as small as possible.
3. Holes should be drilled or punched clean with no burrs or
ridges, and chamfered to a maximum radius of 0.010
inch.
4. The mounting surface should be flat within 0.002
inch/inch.
5. Thermal grease (Dow Corning 340 or equivalent) should
always be used on both sides of the insulating washer if
one is employed.
6. Thin insulating washers should be used. (Thickness of
factory-supplied mica washers range from 2 to 4 mils).
7. A lock washer or torque washer, made of material having
sufficient creep strength, should be used to prevent
degradation of heat sink efficiency during life.
A wide variety of solvents is available for degreasing and
flux removal. The usual practice is to submerge components
in a solvent bath for a specified time. However, from a
reliability stand point it is extremely important that the
solvent, together with other chemicals in the solder-cleaning
system (such as flux and solder covers), do not adversely
affect the life of the component. This consideration applies
to all non-hermetic and molded-plastic components.
It is, of course, impractical to evaluate the effect on
long-term transistor life of all cleaning solvents, which are
marketed with numerous additives under a variety of brand
names. These solvents can, however, be classified with
respect to their component parts, as either acceptable or
unacceptable. Chlorinated solvents tend to dissolve the outer
package and, therefore, make operation in a humid atmosphere unreliable. Gasoline and other hydrocarbons cause the
inner encapsulant to swell and damage the transistor. Alcohol

and unchlorinated freons are acceptable solvents. Examples
of such solvents are:
I. Freon TE
2. Freon TE-35
3. Freon TP-35 (Freon PC)
4. Alcohol (isopropanol, methanol, and special denatured
alcohols, such as SDA I, SDA30, SDAJ4, and SDA44)
Care must also be used in the selection of fluxes for lead
soldering. Rosin or activated rosin fluxes are recommended,
while organic or acid fluxes are not. Examples of acceptable
fluxes are:
I. Alpha Reliaros No. 320-33
2. Alpha Reliaros No. 346
3. Alpha Reliaros No. 711
4. Alpha Reliafoam No. 807
5. Alpha Reliafoam No. 809
6. Alpha Reliafoam No. 811-13
7. Alpha Reliafoam No. 815-35
8. Kester No. 44
If the completed assembly is to be encapsulated, the
effect on the molded-plastic transistor must be studied from
both a chemical and a physical standpoint.
RECTIFIERS
AND THYRISTORS
A surge-limiting impedance should always be used in

series with silicon rectifiers and thyristors. The impedance
value must be sufficient to limit the surge current to the
value specified under the maximum ratings. This impedance
may be proVided by the power transformer winding, or by an
external resistor or choke.
A very efficient method for mounting thyristors utiliZing
packages such as the JEDEC TO-5 and "modified TO-5" is to
provide intimate contact between the heat sink and at least
one half of the base of the device opposite the leads. These
packages can be mounted to the heat sink mechanically with
glue or an epoxy adhesive, or by soldering. Soldering to the
heat sink is preferable because it is the most efficient
method.
The use of a "self-jigging" arrangement and a solder
preform is recommended. Such an arrangement is illustrated
in RCA Publication
MHI-300B, "Mounting Hardware
Supplied with RCA Semiconductor Devices". If each unit is
soldered individually, the heat source should be held on the
heat sink and the solder on the unit. Heat should be applied
only long enough to permit solder to flow freely. For more
detailed thyristor mounting considerations, refer to Application Note AN3822, "Thermal Considerations in Mounting
of RCA Thyristors".
MOS FIELD-EFFECT
TRANSISTORS
Insulated-Gate Metal Oxide-Semiconductor Field-Effect

Transistors
(MOS FETs), like bipolar high-frequency
transistors, are susceptible to gate insulation damage by the
electrostatic discharge of energy through the devices.
Electrostatic discharges can occur in an MOS FET if a type
with an unprotected gate is picked up and the static charge,
built in the handler's body capacitanu' is discharged through
*Trade Mark: Emerson and Cumming, Inc.
the device. With proper handling and applications

procedures, however, MOS transistors are currently being
extensively used in production by numerous equipment
manufacturers in military, industrial, and consumer applications, with virtually no problems of damage due to
electrostatic discharge.
In some MOS FETs, diodes are electrically connected
between each insulated gate and the transistor's source.
These diodes offer protection against static discharge and
in-circuit transients without the need for external shorting
mechanisms. MOS FETs which do not include gateprotection diodes can be handled safely if the follOWingbasic
precau tions are taken:
I. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs attached to the device by the vendor, or by the
insertion into conductive material such as "ECCOSORB*
LD26" or equivalent.
(NOTE: Polystyrene insulating "SNOW" is not sufficiently conductive and should not be used.)
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means, for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
INTEGRATED
CIRCUITS
In any method of mounting integrated circuits which

involves bending or forming of the device leads, it is
extremely important that the lead be supported and clamped
between the bend and the package seal, and that bending be
done with care to avoid damage to lead plating. In no case
should the radius of the bend be less than the diameter of the
lead, or in the case of rectangular leads, such as those used in
RCA 14-lead and 16-lead flat-packages, less than the lead
thickness. It is also extremely important that the ends of the
bent leads be straight to assure proper insertion through the
holes in the printed-drcuit board_
COS/MOS (Complementary-Symmetry
MOS)
Integrated Circuits
1. Handling
All COS/MOS gate inputs have a resistor/diode gate

protection network. All transmission gate inputs and all
outputs have diode protection prOVided by inherent p-n
junction diodes. These diode networks at input and output
interfaces fully protect COS/MOS devices from gate-oxide
failure (70 to 100 volt limit) for static discharge or signal
voltage up to I to 2 kilovolts under most transient or
low-current conditions.
Although protection
against electrostatic
effects is
provided by built-in circuitry, the following handling
precautions should be taken:
I. Soldering-iron tips and test equipment should be
grounded.
2. Devices should not be inserted in non-conductive
containers such as conventional plastic snow or trays.
Unused
Inputs
All unused input leads must be connected to either VSS

or VDD, whichever is appropriate for the logic circuit
involved. A floating input on a high-current type, such as the
CD4009A, CD40IOA, not only can result in faulty logic
operation, but can cause the maximum power dissipation of
200 milliwatts to be exceeded and may result in damage to
the device. Inputs to these types, which are mounted on
printed-circuit
boards that may temporarily
become
unterminated, should have a pull-up resistor to VSS or VDD.
A useful range of values for such resistors is from 0.2 to I
megohm.
Input Signals
Signals shall not be applied to the inputs while the device
power supply is off unless the input current is limited to a
steady state value of less than 10 milliamperes.
Output Short Circuits
Shorting of outputs to VSS or VDD can damage many of

the higher-out put-current CaS/MaS
types, such as the
CD4007A, CD4009A, and CD4010A. In general, these types
can all be safely shorted for supplies up to 5 volts, but will be
damaged (depending on type) at higher power-supply
voltages. For cases in which a short-circuit load, such as the
base of a p-n-p or an n-p-n bipolar transistor, is directly
driven, the device output characteristics given in the
published data should be consulted to determine the
requirements for a safe operation below 200 milliwatts.
For detailed CaS/MaS IC Handling Considerations, refer
to Application Note ICAN-6000 "Handling Considerations
for MaS Integrated Circuits".
Solid state chips, unlike packaged devices, are nonhermetic devices, normally fragile and small in physical size,
and therefore, require special handling considerations as
follows:
I. Chips must be stored under proper conditions to insure
that they are not subjected to a moist and/or contaminated atmosphere that could alter their electrical,
physical, or mechanical characteristics. After the shipping
container is opened, the chip must be stored under the
following conditions:
A. Storage temperature, 400C max.
B. Relative humidity, 50% max.
C. Clean, dust-free environment.
2. The user must exercise proper care when handling chips
to prevent even the slightest physical damage to the chip.
3. During mounting and lead bonding of chips the user must
use proper assembly techniques to obtain proper electrical, thermal, and mechanical performance.
4. After the chip has been mounted and bonded, any
necessary procedure must be followed by the user to
insure that these non-hermetic chips are not subjected to
moist or contaminated atmosphere which might cause
the development of electrical conductive paths across the
relatively small insulating surfaces. In additior., proper
consideration must be given to the protection of these
devices from other harmful environments which could
conceivably adversely affect their proper performance.
[Kl(]5LJD
Thyristors
Application Note
Solid State
Division
AN-3418
Design Considerations for the

RCA-S6431M Silicon Controlled Rectifier
In High-Current Pulse Applications
by
D. E. Burke and G. W. Albrecht
Silicon controlled rectifiers (SCR's) are often used
in pulse circuits in which the ratio of peak to average
current is large.
Typical applications
include radar
pulse modulators, inverters, and switching regulators.
The limiting parameter in such applications
often is
the time required for forward current to spread over
the whole area of the junction.
Losses in the SCR
are high, and are concentrated in a small region until
the entire junction area is in conduction.
This concentration produces undesirable high temperatures.
The RCA-S6431M
SCR is
achieve rapid utilization of the
rating curves and calculations
allow the designer to make full
ing capability of this device.
specially
designed to
full junction area The
presented in this Note
use of the high switch-
The negative voltage reverse-biases

the SCR.
form of turn-off is indicated in Fig.2(bl.
This
When the energy-storage

network is recharged
from the dc supply, the SCR returns to the forwardblocking condition and is ready foc the next cycle.
The recharge interval (t3 - t4) may be delayed by use
of a charging SCR, as shown in Figs.l and 2 (t2 - t3).
This technique reduces the turn-off time requirements
for the SCR.
The rate of rec harge infl uences the
dv/ dt requirements for the SCR.
Figs.l and 2 illustrate only one of a great variety
of pulse circuits, each of which would have particular
requirements
for the SCR.
A common requirement
would be to pass focward currents
with particular
emphasis on shape and magnitude.
TurnOn Time Definitions
A typical SCR pulse modulator circuit is shown

in Fig.I.
Basic waveforms for the circuit are shown
in Fig.2. The capacitors of the energy-storage network
are charged by the dc supply.
The SCR is triggered
by pulses from the gate-trigger generator No.1, and the
energy-storage
network discharges
through an inductance and the load (transformer).
Fig.2 shows that the
discharge of the storage network (t 1- t2) is oscillatory;
the half-sine-wave
shape is characteristic
of a single
LC-section energy-storage network.
For turn-off, the load is "mismatched"
to the
discharge-circuit
impedance so that a negative voltage
is developed on the capacitor at the end of the pulse.
In the idealized waveforms of Fig.2, the SCR is

presented as a perfect switch.
Actually, it exhibits
a finite resistance
prior to turn-on, a delay after the
introduction
of the trigger pulse,
and appreciable
resistance
after turn-on.
The common definition of turn-on time adequately
covers the delay and rise-time intervals of the turn-on
process,
but does not consider the rate of current
spread over the junction area and its attendant dissipation.
Because the dissipation
after turn-on is an
important consideration
in pulse circuits, turn-on definitions in themselves
provide no indication
of the
switching capability of the SCR.
Ie
'+---V
I
I
VSCR
Capability
Because several different physical effects occur

in the SCR during the complete turn-on interval, it is
convenient to divide the total turn-on time into three
discrete
intervals:
delay time tl, fall time tz, and
equalizing time t3' These intervals are shown in Fig.3.
The sol id lines represent device turn-on to low steadystate
forward current,
in which case equalization
effects are not pronounced. The dashed lines represent
SCR turn-on to high currents, in which case t3 becomes
a noticeable interval.
The first interval (tl or delay time) results from
the initiation of forward conduction between the p-type
base and the n-type emitter (i.e., injection of holes
through the gate-cathode junction and injection of electrons through the cathode-gate junction>. This interval
depends to a Iarge extent upon the level of gate current used to turn on the SCR. The use of a trigger
pul se greater than the min imum gate-current requirement
of the SCR minimizes delay time and reduces the range
of the delay times encountered
between individual
SeR's, the variability of delay with temperature, and
the variability of cycle-to-cycle
delay or jitter.* There
are no significant
power losses
in the SCR during
delay.
The del ay interval is primarily of interest
because of its effect on system perfonnance.
--1-
--
As an example, the rise-time portion of turn-on

is defined as the time interval between the 10-per-cent
and 90-per-cent points on the current wave shape when
the SCR is triggered on in a circuit that has rated
forward voltage and sufficient resistance
to limit the
current to rated values.
For a 600-volt device, the end
of the turn-on interval occurs when the forward voltage
drop across the SCR is 60 volts. This value contrasts
with the steady-state
forward voltage of only 1 or Z
volts under such conditions.
An interval many times
greater than the turn-on time may be -required before
the forward voltage drop reduces to the steady-state
level.
Switching
0 -
-h~
+
GATE
SIGNAL
No.1
I
I
I
S~~':.~
b
i
NO_2+~
0
{~ARGING
seRI
I
J
Fig.2. Idealized wavefarms

far pu/se.discharge
circuit.
The second interval (tz or fall time) depends on
the initiation of forward conduction between the p-type
emitter and the n-type emitter (i.e., anode-to-cathode
current).
When this phenomenon is isolated from current ef'gcts,
as described
later, the duration of the
voltage fall time measured from the 9O-per-cent to the
10-per-cent point is less than 0.3 microsecond. Voltage
fall time is illustrated
in Fig.4 for a range of initial
voltages.
The flow of forward current during the voltage fall
time results in power loss in this interval. The magniI
I
I
GATE
SIGNAL
+~
I
I
I
No.1
I
I
I
r --i---""'-=
I I," ~
HIGH
CURRENT
LOW CURRENT
r-r-----I
I
I
I
I
I
l..
I
-_L
--,-""t'""t--r--I -j'2t-
The technical bulletin for the S6431 Mcontains infonnation on

maximum trigger-pulse magnitudes for various pulse widths
for this device. This Note discusses gating characteristics
of ReA SCR t 5 in more detail.
I
I
I
-l
'I
I- t-t3~
~t1IGH
CURRENT
~d.u
"Ull~
V1 vU1Luge HI r.oe ~tt,
high peak dissipation
me aeVlce experIences
during the short turn-on interval.
....
800
z
w
~ 600
400
ft
200
"'",,-FigA
- I/Iustratian
(low
of voltage
forward
faff time
current).
The third discrete interval during turn-on, equalization time (t3 of Fig.3), represents the time required for
the current to spread over the junction area. The forward current resulting from the initial voltage fall is
concentrated in a small area of the junction and spreads
gradually over the entire area. The rate of increase
in the active j unction area depends on the geometry
and the junction parameters, and is infll!enced by the
levels of driving voltage and current. In general, the
time required for full utilization of junction area represents a considerably longer interval than tl (delay)
or tz (fam.
Fig.S
- Forward
voltage
tage
at various
times
as a function
after
of forward
the initiation
vol-
of turn-on.
temperature
and upon the differential temperature
stresses
in the device.
Fig.9 shows the allowable
maximum current for the 864 13M at any time after the
initiation of the current pulse.
This curve, together
with those in Figs.7 and 8, gives an indication of the
feasibility of using the 86431 M in a high-current pulse
application.
Fig.IO illustrates the calculation of device dissipation and pulse repetition rate for a particular pulse
For given conditions of current rise time, current

level, and gate drive, t3 could be defined as the time
required for forward voltage to decrease to a given
multiple of the final steady-state value under a constant-current pulse.
Such a definition would be more
indicative of switching capability than the conventional
definition of turn-on time as the time required for forward ON-state voltage to decrease to a percentage
of the initial blocking voltage. At best, however, either
type of definition has only limited usefulness to the
user.
Characteristics
and Ratings
Because the major factor In the rating of SCR's

for pulse applications
is the initial forward-voltage
drop, the RCAS6431Mis rated specifically
for this
characteristic.
Figs.5 and 6 show two families of
rating curves which make it possible to calculate the
power loss per pulse and the average power loss for a
particular current-pulse shape, magnitude, and repetition
rate desired.
Figs.7 and 8 show maximum allowable
repetition rates and pulse amplitudes for several pulse
shapes, and are useful as a quick estimating guide
for the pulse-current switching capability of the 86431 M
SCR.
Limits must also be imposed upon the instantaneous
temperature rise of the junction over the average case
Fig.6
- Instantaneous
forward dissipation
as a function
of current at various times after the initiation
of turn-on.
integral approach is then used to obtain the wattseconds-per-pulse

measurements shown in the table.
For a repetition rate of 1000 pulses per second, the
average
forward dissipation
is 24.37 watts for the
current pulse specified.
This value is within the
rating of 30 watts for the S643 I M at a case temperature
Fig.? - Peak current as a function of maximum repetition

rate for sine-wave pulse shapes.
~~
o
4000
~
~
~
TJME-~S
"'3000
w
'"
'"
~2000
1
~
lr
Zl
~
il'
Fig.8. Peak current as a function of maximum repetition

rate for square-wave pulse shapes.
TIME
INTERVAL
(~SI
DISSIPATION
FOR
INTERVAL
mW-S
0-0.5
0.5-1
1-2
2 3
3 4
4-5
EXAMPLE'
TOTAL
DISSIPATION
FOR ONE
PULSE
mW-S
AVERAGE
DISSIPATION
AT 1000 CIS
REP. RATE
(Wi
MAXIMUM
REP. RATE
FOR 30W
DISSIPATION
(CIS)
24.37
24.37
1225
1.87
4.12
8.25
6.18
3.25
0.70
AVERAGE FORWARD WATTSECOND
DISSIPATION
DURING 3}'-S TO 4~S
INTERVAL:
(4-3) 11:10-6
J.
3.25 II:103 W =3.25mW-S
of 65C. At higher case temperatures the total dissipation must be decreased, as shown in Fig. II.
Fig.9 - Maximum permissible current as a function

of time after the initiation of turn-on.
shape.
In the example shown, the pulse has a peak
magnitude of 500 amperes and a base width of 5 microseconds. The curves shown in Fig.IO are constructed
from the curves of Figs.5 and 6 by means of a series
of readings at different time intervals (delay and fall
regions are neglected),
A step-by-step approximate
Because the interval of highest dissipation occurs

at the beginning of the current pulse, reduction in the
magnitude of current during this time increases the
over-all switching capability of the SCR. The current
may be reduced by use of a saturable reactor in the
pulse-<iischarge circuit which has sufficient unsaturated
volt-second capacity to present a high impedance for
one to two microseconds.
The current is then small,
and dissipation is limited, until the junction area in
conduction increases to incl ude an appreciable percentage of the total cathode. By the time the reactor
saturates and high pulse current results, the cathode
area in conduction is adequate to handle the high current with low dissipation.
The rate of current spread over the cathode area
depends upon several factors, one of which is the
level of current. Therefore, the use of a delay reactor
to keep forward current low also delays the spread
of current to some extent and subtracts from its beneficial effects.
The maximum benefit can be achieved
by reduction of the inductance of the reactor prior to
saturation, or by addition of another impedance in
parallel with the reactor, to effect a compromise between the initial current level and dissipation and
the rate of current-density equalization.
The curves
in thi s Note do not represent the use of a delayreactor.
In addition to the power loss in the SCR caused by
forward current, the total dissipation in the device
includes forward and reverse blocking losses and
probably reverse recovery losses during the turn-off
process.
The reverse recovery losses depend upon
several factors, such as forward-current amplitude, rate
of decrease of forward current, reverse-current flow,
rate of rise of reverse voltage, and reverse-voltage
amplitude. Because reverse losses are circuit-dependent, they can best be evaluated in a working circuit.
r---....
.,
FORWARD AND REVERSE

LOSSES INCLUDED
-........
-.............
.............
100
-.............
r---....
"'~ eo
g..
-.............
r---..
~ 60
...
Fig. 7 7 Maximum average total power c/issipation

as a function
of case temperature.
Application of RCA Silicon Controlled Rectifiers

to the Control of Universal Motors
by
J.V. Yonushka
Silicon controlled rectifiers

have been widely
accepted in power-control applications
in industrial
systems where high-performance requirements justify
the economics of the application.
Historically, in the
commercial high-volume market, economic considerations have precluded the use of the SCR. However,
with the development of a family of SCR's by RCA designed specifically
for mass-production economy and
rated for 120- and 240-volt line operation, the use of
these devices in controls for many types of small electric motors has been made economically feasible.
The
controls can be designed to provide good performance,
maximum efficiency, and high reliability in compact
packaging arrangements.
The control circuits discussed in the following text
are typical of the many possible circuits applicable to
electric motor control. A general description including
the typical characteristics of universal motors is given.
Speed control by use of phase-angle variations is discussed; schematic diagrams are given, and the advantages and limitations of each circuit are contrasted.
A
chart of availableSCR's
is shown at the end of the Note.
Universal Mators
Many fractional horsepower motors are series-wound

"universal" motors, so named because of their ability
to operate directly from either ac or dc power sources.
Fig.l is a schematic of this type of motor operated
from an ac supply. Because most domestic applications
today require 60-hertz power. universal motors are
usually designed to have optimum performance characteristics

at this frequency.
Most universal motors
run faster at a given dc voltage than at the same 60hertz ac voltage.
The field winding of a universal motor, whether
distributed or lumped (salient pole), is in series with
the armature and external circuit, as shown in Fig.1.
Fig.! . Schematic diagram far a series-waund

universal
motor.
The current through the field winding produces a magnetic field which cuts across the armature conductors.
The action of this field in opposition to the field set up
by the armature current subjects the individual conductors to a lateral thrust which results in armature
rotation.
AC operation of a universal motor is possible
cause of the nature of its electrical connections.
the ac source voltage reverses every half-eycle,
beAs
the
magnetic field produced by the field winding reverses

its direction simultaneously.
Because the armature
windings are in series with the field windings through
the brushes and commutating segments, the current
through the armature winding also reverses.
Because
both the magnetic field and armature current are reversed, the direction of the lateral thrust on the armature
windings remains constant.
As the armature rotates through the magnetic field,
a voltage opposite to the impressed voltage is induced
in the individual conductors.
Counter emf produced in
the armature conductors is therefore proportional to
motor speed.
In half-wave operation, during the nonconducting half-cycle of an SCR, the rotating armature
still produces a counter emf because of the residual
magnetism of the field poles.
In some of the applications described, the counter emf of an operating motor
is used as a means of providing speed regulation to
compensate for changing shaft loads.
The current through an operating motor armature
depends upon the difference between the impressed
voltage (emf) and the counter emf. The current that
flows through a universal motor when it is initially
energized is large because there is no rotation to generate a counter emf in the armature windings. The starting
current is limited only by the impedance of the armature
and field windings.
The ratio of peak starting current
to peak running current can be as high as 10: 1.
The speed of a series motor automatically adjusts
itself so that the difference between the impressed voltage and the counter emf is sufficient to permit enough
current to flow to develop the torque required by the
load.
At very light loads, or at no load, the current
through a universal motor is small. To maintain a small
current through the motor, the counter emf must be high
enough so that only a small difference exists between
the impressed voltage and the counter emf. The small
current through the motor also results in a weak magnetic-field flux because it is the current through the
field winding that produces the fl ux. The weakened
magnetic-field flux tends to make the motor speed increase even further to prod uce the high counter emf
requi red to maintain a small motor current.
It would
appear, then, that universal motors should tend to "run
away" at no load. This run-away do~s not occur, however, because motors of this type usually offer enough
friction and windage loss to limit the maximum attainable no-load speed to a safe val ue.
When a mechan ical load is attached to a universal
motor, the current through the motor must increase to
provide the increased torque required by the load. An
increase in the current through the motor requires an
increase in the difference between the impressed vol tage and the counter emf. This increased difference can
only be brought about by a reduction in counter emf
derived from a decrease in speed.
For an uncompen-
sated universal motor, the full-load speed is approximately 60 per cent or less of the no-load speed.
The torque developed by a universal motor is a
direct result of the magnitude of magnetic-field flux and
armature ClU'rent. For fixed mechanical loads, the starting torque of a universal motor is high because the
armature current at starting time is high; at "stall" conditions,
because of the large armature current, the
t0rque is again high. The stall torque of a series motor
can be as high as 10 times the continuous rated torque.
Because torque and armature current influence the
speed of a universal motor, it is possible under certain
operating conditions to vary the impressed voltage and
influence operating characteristics
of the motor. For
increased mechanical loads, an increase in the impressed voltage produces a larger armature current and tends
to keep the speed constant.
High starting torque, adjustable
speed characteristics,
and small size are
distinct advantages of a universal motor over a comparably rated single-phase
induction motor. Typical
performance characteristic
curves for a universal motor
are shown in Fig.2.
Fig.2.
Typical
performance
universal
Use
of Silicon
Controlled
curves
for a
motor.
Rectifiers
for Motor
Control
One of the simplest and most efficient means of

varying the impressed voltage to a load on an ac power
system is by control of the conduction angle of an SCR
placed in series with the load. Typical curves showing
the variation of motor speed with SCR conduction angle
for both half-wave and full-wave impressed motor voltages are illustrated in Fig.3. If desired, a switch may
be installed in the half-wave circuits so that the SCR
and its related control circuit can be bypassed for fullpower operation.
HolfWove
Control
There are many good circuits available for halfwave control of universal motors; their attributes and
limitations are described in detail below. The circuits
are divided into two classes; regulating and non-regulating. Regulation in this instance implies load sensing
and compensation of the system to prevent changes in
of the neon lamp improves noise rejection and prevents

erratic firing of the SCR because of brush noises on
the voltage supply lines.
Table I shows components
for the circuit of FigA.
Fig.3 Typical
performance curves for a universal

with phose-angle control.
motor
motor speed. The type of regulation provided by each

circuit is stated and compared to other circuits.
The half-wave proportional control circuit shown
in FigA is a non-regulating circuit whose function depends upon an RC delay network for gate phase-lag
control.
This circuit is better than simple resistance
firing circuits because the phase-shifting characteristics
of the RC network permit the firing of the SCR beyond
the peak of the impressed voltage, resulting in small
conduction angles and very slow speed.
The control circuit shown in FigA uses the breakdown voltage of a neon lamp as a threshold setting for
firing the SCR. The neon lamp is specifically designed
for handling the high-eurrent pulses required to trigger
SCR's.
When the voltage across capacitor C reaches
the breakdown voltage of the neon lamp, the lamp fires,
and C discharges through the lamp to its maintaining
voltage.
At this point, the lamp again reverts to its
high-impedance state.
The discharge of the capacitor
from breakdown to maintaining voltage of the neon lamp
provides a current pulse of sufficient magnitude to fire
the SCR. Once the SCR has fired, the voltage across
the phase-shift network reduces to the forward voltage
drop of the SCR for the remainder of the half-cycle. The
range of conduction angles of this circuit is approximately 30 to 150 degrees. The high breakdown voltage
TABLE
AC
SUPPLY
I COMPONENTS
AC
CURRENT
*NE83, 5AH, A057B, or equiv.
Fig.4 Haffwave
motor control with no regulation.
The circuit shown in Fig.5 reduces spread in gate

turn-on characteristics.
This circuit depends upon the
fast switching characteristics
of transistors
such as
those used in the two-transistor
regenerative trigger
network shown.
The phase-shift characteristics
are
still retained to provide conduction angles less than
90 degrees through the RC network of R1, R2, and C1.
Resistor Ra provides turn-on current to the base of Q1
when the voltage across C 1 becomes large enough during
the positive half-cycle.
The base current in Q 1 turns
on this transistor.
Transistor Ql then supplies base
FOR CIRCUIT
SHOWN IN FICA.
F1
CR1
R2
SCR1
D12018
D12018
D12018
D1201D
D1201 D
D1201D
100 K, 1/2 W
RCA2N3528'
120 V
I A
3 AG, 1.5 A, Quick Act
120 V
3A
3 AS, 3 A
120 V
7A
3 AS, 7 A
240 V
IA
240 V
3A
3 AS, 3 A
240 V
7A
3 AS, 7 A
366
100 K, 1/2 W
RCA-2N3228
100 K, 1/2 W
RCA2N3669
150 K, 1/2 W
RCA2N3529
150 K, 1/2 W
RCA2N3525
150 K, 1/2 W
RCA2N3670
C,
'I"
- 25v
current to Q2. When Q2 turns on, it supplies more base

current to Ql. This regenerative
action leads to the
rapid saturation of transistors Q 1 and Q2. Capacitor C 1
discharges
through the saturated transistors
into the
gate of the SCR. When the SCR fires, the remaining
portion of the positive half-cycle of ac power is applied
to the motor. Speed control is accomplished by adjustment of potentiometer
R 1. With component values as
shown on the schematic diagram in Fig.5, the threshold
voltage for firing the circuit is approximately 8 volts;
the maximum conduction
angle is approximately
170
degrees.
Table II shows components for the circuit
with various RCA SCR's.
Fig.6 shows a fundamental circuit of direct-coupled
SCR control with voltage feedback.
This circuit is
highly effective for speed control of universal motors.
The circuit makes use of the counter emf kemD induced
AC
SUPPLY
TABLE II - COMPONENTS
AC
F1
CURRENT
FOR CIRCUIT
SHOWN IN FIG.5.
CR1
R1
SCR1
120 V
lA
012018
75 K, 1/2 W
120 V
3A
3 AB, 3 A
012018
75 K, 1/2 W
RCA-2N3228
120 V
7A
3 AB, 7 A
012018
012010
75 K, 1/2 W
RCA2N3669
150 K, 1/2 W
RCA-2N3529
150 K, 1/2 W
RCA-2N3525
150 K, 1/2 W
RCA-2N3670
240 V
I A
240 V
3A
3 AB, 3 A
240 V
7A
3 AB, 7 A
012010
012010
RCA-2N3528
cycles when there is no voltage

(hence the term skip cycling").
in the rotating armature because of the residual magnetism in the motor on the half-cycle when the SCR is
blocking.
Fig.7 shows a variation of the circuit in Fig.5.

The basic difference between the two circuits is that
the circuit in Fig.7 provides feedback for changing
load conditions to minimize changes in motor speed.
The feedback is provided by R7' which is in series with
the motor. A voltage proportional to the peak current
through the motor is developed across the resistor.
This voltage is stored on capacitor Cz through diode
CRz, and is of a polarity that causes the bias on the
resistance network ofR3 and R4 to change in accordance
with the load on the motor. With an increasing motor'
load, the speed tends to decrease.
This decrease in
motor speed causes more current to flow through the
motor armature and field windings.
When the current
flowing through R7 increases,
the voltage stored on
capacitor Cz increases in the positive direction.
This
increase in capacitor voltage causes the transistors
to
conduct earlier in the cycle, to fire the SCR, and to
provide a greater portion of the power cycle to the
motor. With a decreasing
load, the motor current decreases
and the voltage stored by capacitor Cz decreases.
The transistors
and SCR then conduct later
in the cycle.
The resultant reduction in the average
power supplied to the motor causes a reduced torque to
the smaller load. Because motor current is a function of
the motor itself, resistor R7 has to be matched with the
motor rating to provide optimum feedback for load compensation.
Resistor R7 may range from 0.1 ohm for
At no load and at the low-speed control setting,

"skip-cycl ing' operation occurs, and motor speeds are
erratic.
Because no counter emf is induced in the armature when the motor is standing still, the SCR fires
at low bias settings.
The motor is then accelerated to
a point at which counter emf induced in the rotating
armature excceds the gatc-firing bias of the SCR and
prevents the SCR from firing. The SCR is not able to
fire again until the speed of the motor is rcduced (because of friction and windage losses) to a value for
which the induced voltage in the rotating armature is
less than the gate bias.
At this time the SCR fires
again: The motor deceleration occurs over a number of
TABLE
III COMPONENTS
AC
CURREIiT
FOR
CIRCUIT
CRj, CR2
5.6 K,
5.6 K,
1A
120 V
3A
3 AS, 3 A
120 V
7A
3 AS, 7 A
240 V
IA
3 AG, 1.5 A, Quick Acl
012018
012018
012018
012010
3 AS, 3 A
012010
240 V
3A
7A
3 AS, 7 A
SHOWN
Fj
120 V
240 V
to the motor,
When a load is applied to the motor, the motor

speed decreases and thus reduces the counter emf induced in the rotating armature. With a reduced counter
emf, the SCR fires earlier in the cycle and provides
increased motor torque to the load. Fig.6 also shows
variations of conduction angle with changes in counter
emf. The counter emf appears as a constant voltage
at the motor terminals when the SCR is blocking.
Because the counter emf is essentially
a characteristic
of the motor, different potentiometer
settings are required for comparable operating conditions for different
motors. Circuit values for use with various RCA SCR's
are shown in Table III.
The counter emf is a function of speed and, therefore, can be used as an indication' of speer: changes as
mechanical
load varies.
The gate-firing circuit is a
resistance
network consisting
of R1 and Rz.
During
the positive half-cycle of the source voltage, a fraction
of the voltage is developed at the center-tap of the
potentiometer
and is compared with the counter emf
developed in the rotating armature of the motor. When
the bias developed at the gate of the SCR from the
potentiometer
exceeds the counter emf of the motor,
the SCR fires.
AC power is then applied to the motor
for the remaining portion of the positive half-cycle.
Speed control is accompl ished by adjustment of potentiometer R l' If the SCR is fired early in the cycle, the
motor operates at high speed because essentially
the
full rated line voltage is applied to the motor. If the
SCR is fired later in the cycle, the average value of
voltage applied to the motor is reduced, and a corresponding reduction in motor speed occurs. On the negative half-cycle,
the SCR blocks voltage to the motor.
The voltage applied to the gate of the SCR is a sine
wave because it is derived from the sine-wave line voltage. The minimum conduction angle occurs at the peak
of the sine wave and is restricted to 90 degrees.
Increasing conduction angles occur when the gate bias
to the SCR is increased to allow firing at voltage values
which are less than the peak value.
AC
SUPPLY
applied
012010
IN FIG.6.
Rj
R2
SCR1
2W
I K, 2 W
RCA-2N3528
2W
I K, 2 W
RCA2N3228
2.7 K,
4W
500,2
RCA-2N3669
10 K,
5W
I K, 2 W
RCA2N3529
10 K,
5W
I K, 2 W
RCA-2N3525
500, 2 W
RCA-2N3670
5.6 K, 7.5 W
MOTOR
~VOLTAGE
C1
VOLTAGE
'/
', ...,'
GATE CURRENT
LIGHT LOAD
Fig.7 - Half.wave
GATE CURRENT
HEAVY
LOAD
motor control using two-transistor
larger-size
universal motors to 1.0 ohm for smaller
types. Circuit values for use with various RCA SCR's
are shown in Table IV.
Full-Wave
regenerative
triggering
with regulation.
vices is avoided. There is a hysteresis effect associated with this circuit because C1 charges to alternate
positive and negative values.
As Rz decreases from
Control
This section discusses

the application of SCR's
to full-wave motor control. Two SCR's are usually required to provide full-wave control.
A very simple SCR full-wave proportional control
circuit is shown in Fig.S.
Again, ac phase shifting
and neon triggering are used to provide gate phaseangle control; a small pulse transformer is utilized for
isolation.
The circuit provides a symmetrical output
for both Iralves of the ac input voltage because the same
electrical components are used in the phasing network
for both SCR gates. Because the SCR gate circuits are
completely isolated from each other, the cross-talk
problem usually associated
with gate firing circuits
using transformer coupling and bi-directional trigger deTABLE
AC
SUPPLY
IV - COMPONENTS
AC
CURRENT
~~~!ALJE~
MOTOR
VOLTAGE
,'-&':>,.. V
I
<,,V
CAPACITOR/"'\.
VOLTAGE~
/-~
<
'
/"'\.
*NE-83. 5AH. A057B. or equiv.

Tl - Better Coil and Transformer
Co. Type 99A16. or equiv.
Fig.8 - Full-wave
FOR
CIRCUIT
SHOWN
motor control with no regulation.

IN FIG.7.
Fl
CRl
R]
SCRl
012018
012018
75 K, 1/2 W
RCA-2N3528
75 K, 1/2 W
RCA-2N3228
75 K, 1/2 W
RCA-2N3669
150 K, 1/2 W
RCA-2N3529
150 K, 1/2 W
RCA-2N3525
150 K, 1/2 W
RCA-2N3670
120 V
IA
120 V
3A
3 AS, 3 A
120 V
7A
3 AS, 7 A
240 V
lA
240 V
3A
3 AS, 3 A
240 V
7A
3 AS, 7 A
369
012018
D12010
D12010
012010
its maximum value, C 1 charges to a higher voltage on

each half cycle.
When the positive half-eycle voltage
on C 1 reaches the breakdown potential of the neon lamp,
the lamp fires, allowing C 1 to discharge to the maintaining voltage of the lamp through CR 1 and the lamp
into the gate of SCR2. When SCR2 fires, the voltage
across the control circuit drops to the forward voltage
val ue of the SCR, allowing C 1 to discharge.
On the
next half-cycle, C 1 charges from a lower positive potential and allows the neon lamp to fire earlier in the
cycle. If the potentiometer resistance R2 is increased,
the SCR's fire at a reduced conduction angle and the
hysteresis
effect is produced.
On the negative halfcycle, when the charge on C 1 has reached the breakdown potential of the neon lamp, the capacitor discharges
through CR 2, the lamp, and the primary of transformer
T 1 to the maintaining voltage of the neon lamp. The
current pulse formed by the discharge of C 1 is coupled
by T 1 into the gate of SCR1. For 60-hertz operation,
the transformer characteristics
are not critical because
the magnitude and shape of the current firing pulse are
determined primarily by the charge on the capacitor and
the characteristics
of the neon lamp. Circuit values for
use with various RCA SCR's are shown in Table V.
Conduction angles obtained with this circuit vary from
30 to 150 degrees; at the maximum conduction angle,
the voltage impressed upon the load (universal motor)
is approximately 95 per cent of the input rms voltage.
tive potential at the anode.

When the SCR fires, the
remaining portion of the half-eycle is applied to the
load. On the alternate half-cycle, the other SCR turns
on.
With the component values shown in Fig.9, the
threshold voltage required to fire the transistor circuit
is approximately
8 volts.
Variations
in conduction
angle are accomplished by changing the setting of R 2'
In this circuit, the conduction angles may be varied
from 5 to 170 degrees; this larger range is more desirable when higher power is to be controlled.
An SCR full-wave circuit designed for applications
requiring feedback for compensation of load changes is
shown in Fig.ro.
Operation is similar to that of the
circuits discussed
previously except that this circuit
has full-wave
conduction
with proportional
control.
Again, as In the circuit of Fig.7, R7 must be matched
with the motor rating to provide optimum feedback for
load compensation.
Resistor R7 may range from 0.1
ohm for larger-size
universal
motors to 1.0 ohm for
smaller types. Table VII gives a component list for use
of this circuit with various SCR's.
Ratings
Fig.9 shows a full-wave control circuit that has increased conduction-angle

capability.
Table VI shows
the component chart for use of the circuit with various
SCR's. The threshold point of the transistor circuit can
be changed by varying the value of R3. The phase-shift
network composed of R l' R2, and C 1 permits the variation of conduction angles from minimum to maximum. An
ac potential impressed upon th is phase-shifting
network
eliminates skip-cycling at low conduction angles.
The
bridge network of CR1, CR2, CR3, and CR4 rectifies
the ac voltage developed across C 1 and provides the
switching transistors with dc voltage. When the switching trans istors are on and saturated, capacitor C 1 discharges through them into the primary of T l' Because
both SCR's receive the same gate polarity pulse, the
pulse formed by C1 and T1 fires that SCR with a posi-
AC
SUPPLY
AC
CURRENT
120V
1.5 A
120V
5A
120V
lOA
240 V
1.5 A
and Limitations
Package
size and environment limit the voltage
and current capabilities
and, consequently,
the powerdissipation
abilities of an SCR. Maximum temperature
ratings usually depend on the use of a heat sink of a
particular size at a prescribed ambient or case temperature.
The main cause of heat within an SCR operating at
60 hertz is the forward current and voltage drop during
conduction.
Under steady-state
conditions,
the heat
generated within the device must be balanced by the
flow of heat to the heat sink and the ambient air. If
more heat is generated within the SCR than can be
dissipated
by the case and the heat sink, the junction
temperature increases and forward blocking capabilities
are lost.
Under these conditions the SCR may break
down thermally in the reverse direction, causing damage
to the SCR pellet.
An increase in heat-sink size to
maintain the balance between heat generated and heat
dissipated assures reliable performance of the SCR.
F]
R]
R2
C1
SCR1, SCR2
3 AG,2 A, QuickAct
I K, II2 W
50 K, II2 W
0.22 JLF, 100V
RCA2N3528
3 AS, 5 A
I K, II2 W
50 K, II2 W
0.22 JLF, 100V
RCA2N3228
3 AS, 10 A
I K, II2 W
3 AG, 2 A, QuickAct
25 K,
2W
0.47 JLF, 100V
RCA2N3669
I K,
IW
50 K,
2W
0.22 JLF, 100V
RCA2N3529
240 V
5A
3 AS, 5 A
1 K,
1W
50 K,
2W
0.22 JLF, 100V
RCA2N3525
240 V
10 A
3 AS, 10 A
1 K,
IW
25 K,
4W
0.47 JLF, 100V
RCA2N3670
370
R,
"
R,
5.6K
II2W
R2
CR,
CR,
TYPE
D120lA
TYPE
DI20lA
R5
'50
1/2W
C,
I,.F
IOOV
Fig.9.
Full-wave
CR2
CR4
TYPE
DI20lA
TYPE
DI20lA
motor control with no regulation

in w' ich the conduction
can be varied from 5 to 180 degrees.
The current ratings for the circuits

using the
2N3528 and 2N3529 SCR's are based upon measurements made with these devices mounted by their electrical leads with the package in free air. The current
ratings for the circuits using the other SCR types are
based upon measurements made with the SCR's mounted
on an aluminum heat sink having an equivalent dimension of 3 by 3 by 1/16 inches.
TABLE
VI COMPONENTS
The SCR can be mounted on a single-plo.te heat

sink or on a metal chassis.
In chassis
mounting the
package housing and heat sink can be insulated from
the chassis by a mica washer, as shown in Fig.1l.
The
use of silicone grease or other similar material between
the SCR housing and the heat sink provides a better
thermal contact and more efficient heat dissipation.
If
heat dissipation
is critical, a finned heat sink should
FOR CIRCUIT
SHOWN IN FIG.9.
AC
SUPPLY
AC
CURRENT
120 V
1.5 A
3 AG, 2 A, Quick Act
75 K, V2 W
RCA-2N3528
120 V
5A
3 AS, 5 A
75 K, V2 W
RCA-ZN3228
3 AS, 10 A
120 V
lOA
240 V
1.5 A
240 V
240 V
ongle
F]
RZ
SCRI, SCRZ
75 K, V2 W
RCA2N3669
3 AG, 2 A, Quick Act
150 K, V2 W
RCA2N3529
5A
3 AS, 5 A
150 K, V2 W
RCA2N3525
10 A
3 AS, 10 A
150 K, 1/2 W
RCA-2N3670
CR2
TYPE
Ol20lA
MOTOR
~VOLT.GE
Cl
VOLTAGE
TABLE
AC
SUPPLY
/
"
.. /
VII . COMPONENTS
AC
CURRENT
FOR CIRCUIT
SHOWN IN FIG.lO.
CRl,CR2,
CR3, CR,j
R]
120 V
] A
RCA-l N 2860
50 K, 1/2 W
RCA-2N3528
120 V
3A
3 AS, 3 A
RCA-l N l202A
50 K. 1/2 W
RCA2N3228
120 V
7A
3 AS, 7 A
RCA-lNl202A
50 K. 1/2 W
RCA-2N3669
240 V
1A
RCA-l N 2862
100 K, 1/2 W
RCA-2N3529
240 V
3A
3 AS, 3 A
RCA-lNl204A
100K.1/2W
RCA2N3525
240 V
7A
3 AS, 7 A
RCA-l N 1204A
100 K, 1/2 W
RCA2N3670
be used. Heat-sink size may be reduced in any application if moving air can be provided at the SCR mounting
site.
If a universal motor is operated at low speed under
a heavy mechanical load, it may stall and cause heavy
current flow through the SCR. For this reason, lowspeed heavy-load conditions should be allowed to exist
for only a few seconds to prevent possible circuit
damage. In any case, fuse ratings should be carefully
observed and 1imited to the types and val ues indicated
in the tables accompanying the circuits in this Note.
Nameplate data for some universal motors are given

in developed horsepower to the load. This mechanical
designation can be converted into its electrical current
equivalent through the following procedure.
Internal motor losses are taken into cons ideration
by assigning a figure of merit. This figure. 0.5. represents motor operation at 50-per-eent efficiency. and indicates that the power input to the motor is twice the
power delivered to the load. With this figure of merit
and the input voltage Vac' the rms input current to the
motor can be calculated as follows:
mechanical horsepower x 746
Practical
heat sinks, packaging, available fuse
characteristics. and motor overload and stall performance
have been considered and He reflected in the current
ratings shown for the circuits in this Note; these current values should not be exceeded.
0.5 Vac
For an input voltage of 120 volts. the rms input current
becomes:
For an input voltage of 240 volts. the rms input current

becomes:
universal motors that have calculated rms current exceeding the values given in the tables.
The circuits
will accommodate universal motors with ratings up to
3/4 horsepower at 120 volts input and up to 1-112 horsepower at 240 volts input.
[Kl(]3LJD
Thyristors
Application Note
Solid State
Division
AN-3551
Circuit Factor Charts

for RCA Thyristor Applications
(SCR's and Triacs)
by
B. J. Roman
In the design
triacs).
values
Although
conventional
difficult
angle
the
calculations
the current
conduction
angle
and
specific
flowing
are readily
because
the
(SCR's
the
values
rectifiers,
of both
thyristors
to determine
and rms current
these
for thyristors
functions
using
necessary
of peak, average,
the device.
for
of circuits
it is often
through
ratios
are
ratios
and
more
become
the
firing
functions
given
of the
full-wave
wave
circuits
that
SCR and triac
use
show several
of conduction
of the basic
wave,
charts
of these
ac,
using
and firing
circuits.
charts
full-wave
current
angles
Examples
in the design
dc,
RCA thyristors.
Current
as
curves
of per-cent
ripple
in load
current
and
voltage.
90 degrees,
of Figs.
number
of ways
to calculate
they
can be used
Ipkis
smaller
desired
conduction
period.
during
It is also
possible
the necessary
a specified
ticular
to a load
period
Another
values.
For
the peak
or rms
average current
a given
part
of the
to work backwards
current
use
10,
in a
of conduction
peak-to-average
application.
than
be used
current
to determine
current in a thyristor when a specified

to be delivered
angles
to 10; for conduction
1, 2, and 3 can
example,
and determine
and voltage
For conduction
Ipk is equal
than
curves
tain
waveforms for the various circuits are also included, as

well
smaller
The
for
half-
conduction.
angles
are
of half-
and three-phase
of forward
than 90degrees,
is
Note presents
as
some
its period
greater
determined
of the device.
This
J. M. Neilson
and
to main-
ratio
is the
in a par-
calculation
of
rms current at various conduction angles when it is necessary
to determine
the
power
delivered
to a load,
or
power losses in transformers, motors, leads, or bus bars.

Although
equally
the curves
useful
represent
for calculation
device
currents,
of load current
they
are
and voltage
ratios.
Current.
Ratio Curves
Figs.
single-phase
a single-phase
tive
load,
resistive
For use of these curves, it is first
1, 2, and 3 show current-ratio

curves
half-wave
SCR circuit with resistive
SCR or triac
and a three-phase
load, respectively.
full-wave
half-wave
These
circuit
for a
load,
with
resis-
SCR circuit
curves
relate
with
average
current Iavg' rms current Irms' and peak current Ipk to a

reference current 10, This reference current 10 is a constant of the circuit equal to the peak source voltage Vpk
divided
by the load resistance

RL; it represents
the
maximum value that the current can obtain and corresponds
to the peak
Ipk is the
current
of the sine
which
appears
wave.
The peak
current
at the thyristor
during
necessary to
identify the unknown or desired

parameter.
The values
of the parameters
fixed by the circuit specifications
are
then
obtain
determined,
the
and
unknown
the
quantity
appropriate
fixed
parameters.
Examples
given
to illustrate
their
versatility.
In the single-phase
half-wave
an SCR is used to control
curve
as a function
is
used
of the use of the curves
circuit
to
of two of the
shown
power from a sinusoidal
are
in Fig. 4,
ac source
of J 20 volts rms (170 volts peak) into a 2.8-ohm load. This

application requires a load current which can be varied from
2 to 25 amperes.
It is necessary to determine the range of
conduction angles required to obtain this range of load current.
1= 10
DEFINITIONS:
(OO~8c~t800)
sin8c
IOVg=t;Io~CId8
7 - SCR
current
ratios
conduction
The
follows:
The
reference
for single-phase,
with resistive
current
ratio of rms current
10 is first
Irms
half-wave
load.
calculated,
as
to I0 is then calculated
Fig.
3 - SCR current
circuit
for the maximum and minimum load-current requirements,
ratios
for three-phase
with resistive
half-wave
load.
as follows:
The conduction angles corresponding to the ratios
then be determined by use of curve 3 in Fig. 1:
ec
ec
Full-Wave
Fig. 2 - SCR or triac

wave
current
conduction
ratios
for single-phase,
with resistive
load.
full-
AC Triac
can
max = 1060
min = 150
Circuit
Fig. 5 shows a circuit in which a triac is used to control

the power to a 20-ohm resistive load. It is desired to find
the range of conduction angles the gate circuit must be
capable of supplying to provide continuous variation in
load power between 5 and 97 percent of the full power which
the load could dra;-v.
conduction
current
~$~'VV'v
20
resistance
The
angle
required
at a constant
varies
to maintain
value
between
reference
are calculated
of load resistance,
64
R
power P is given by
V
the
V2__
750 amperes
.
mln
1202
2
RL
Therefore,
for maximum
as follows:
0.12
L
p=~
load
the load
OHMS
: V peak
Full
average
while
0.12 and 1.80 ohms.
currents
and minimum values
the
of 30 amperes
20
5- and
97-per-cent
power
points
are as
follows:
Ps : 36 watts
P 97 : 698 watts
DEVICE
VOLTAGE
The
rms current
to each
P s/RL
The reference
V 36/20
is given
current
: 1.3 amperes
10 is determined
120 xV2
20
The current
point
__
by
\ ....
IS
corresponding
ratios
_ ...
DEVICE
\
/CURRENT
/_/_-_t\
"'}
\,-"",,/
/h..'
rms
as follows:
8.5 amperes
for the 5- and 97-per-cent
power levels
then become
at 5%, I,ms/Io
: 1.3/8.5
at 97%, I,ms/Io
Because
the
: 5.9/8.5
circuit
cuit,
the calculated
Fig.
2 to determine
(amperes)
shown
(amperes)
in Fig.
current
ratios
the required
: 0.153
: 0.695
5 is a full-wave
are used
cir-
in curve
conduction
3 of
angles:
Thus, the load power is continuously

variable
from 5 to
97 per cent of full load if the gate circuit is constructed
so that
and
the
conduction
150 degrees.
which can be obtained

of gate circuit.
Full-Wave
triac
angle
This
with
DC SCR or Triac
can be varied
variation
is
a simple
within
between
35
the
range
trigger-diode
type
!8lftCA
j
IN249C
Circuit
',_y/-f\,]/-~
Fig. 6 shows several

different
SCR circuits and a
circuit which can be used to supply a constant
dc
output
to a variable
64 volts
rms.
load
It is desired
resistance
with
to determine
an ac input
the variation
of
in
Fig.
6 - Typical
phase,
full-wave
current
and voltage
thyristor
circuits
waveforms
with
for single-
resistive
load.
Vi__
50 amperes
64
1.80
The ratios of lavg to 10 for an average load current of 30

amperes are then calculated as follows:
DEVICE
VOLTAGE
WAVEFORM
FOR BF:45
The conduction angles corresponding to these two ratios

can then be obtained from curve 5 in Fig. 2:
Fig. 8 - Typical current and voltage waveforms for threephase, hoff-wave SCR circuit with resistive load.
I,ms
0.49 for I3
300
DEVICE
VOL rAGE
85V
PEAK FORWARD,
147 V PEAK
REvERSE
These ratios, together with the reference current, are

then used to determine the range of rms current in the
SCR's, as follows:
Fig. 7 shows a three-phase, half-wave circuit that uses

three SCR's. In this application, the firing angle can be
varied continuously from 30 to 145 degrees. It is desired
to determine the resulting variation in the attainable load
power. Current and voltage waveforms for SCR's in threephase, half-wave circuits are shown in Fig. 8.
Again, the reference current 10 is calculated

as follows:
VLpeak
RL
85 __
3
I,ms max
(0.49) (28)
I=s min
(0.06) (28)
13.7 amperes
1.7 amperes
In this type of circuit, the rms load current is equal

to the rms SCR current multiplied by the square root of
three. The load power P, therefore, is given by
first,
The range of load power can then be determined
follows:
as
28 amperes
Current ratios at the extremes of the firing range are

determined from Fig. 3. For the specified firing angles,
the current ratios are given by
In other words, the load power can be varied continuously

from 27 to 1700 watts.
Per-Cent
Ripple in Lood
The choice of a rectifier circuit for a particular

application often depends on the amount of rectifier
"ripple" (undesired fluctuation in the dc output caused
o \'
o
30
cr
20 0
~
~
0.
ir
Ir
\."- ~
"\
by an ac component) that can be tolerated in the application.

Fig. 9 shows per-cent ripple in load current
and voltage for single-phase half-wave, single-phase
full-wave, and three-phase half-wave thyristor circuits.
SINGLE-PHASE,
HALF -WAVE
--;--1-
tJr/INGLE-PHASE,
FULL-WAVE
THREE - PHASE. HALF -WAVE
f--
f--
I-
CD
'-{ 1/ .........
"< ........
r---... .........~
.........
.........
'00
B0
0
YRMS RIPPLE
.jI/RMS2 -VAVG2
-t. RIPPLE"
0
I
ISO
Fig.
(VRMS
RIPPLE)
VAIIG
1.100 0/.
I
I
"
""
I
165
I
150
\.
75
.5
60
105 120 135
90
CONDUCTION ANGLE (Bel-DEGREES
I
I
I
I
I
I
I
75
135 '20
105 90
60
45
FIRING ANGLE (8fl-DEGREES
ISO
150
165
30
15
9 - Output ripple in thyristor

circuits as a function
of conduction
and firing angles.
OOm3LJD
Thyristors
Application Note
Solid State
Division
AN-3659
Application
of RCA Silicon Rectifiers
To Capacitive Loads
When rectifiers are used in capacitive-load

circuits,
the rectifier current waveforms may deviate considerahly from their true sinusoidal shape.
This deviation
is most evident for the peak-to-average
current ratio,
which is somewhat higher than that for a resistive load.
Because of the variation in current wavesh<lpes, calculations of ratings for capacitive-load
circuits are generally more complicated and time-consuming than those
for resistive-load
rectifier circuits.
This Note describes
a simplified rating system
which allows designers to calculate the characteristics
of capacitive-load
rectifier circuits quickly and accurately.
The effect of the addition of a series limiting
resistance
to such circuits and the importance of the
ratio of the limiting resistance
to capacitive reactance
are described, and curves of rectifier current ratios are
presented as functions of the effective ratio. Typical
design examples are given, and output-ripple considerations are discussed.
Table I defines the symbols used
in the equations and calculations.
Design of Capacitor-Input
Circuits
In the design of a rectifier circuit, the output voltage and current, the input voltage, and the ripple and
regulation requirements are usually specified. The transformer and the type of rectifier to be used are selected
by the designer, and the load resistance
is determined
on the basis of the output voltage and current requirements. The ripple requirements are satisfied by use of
a capacitor to shunt the load RL, as shown in Fig. 1.
The waveforms for this circuit indicate that the voltage
across the capacitor F." coincides with the supply voltage E when the rectifier is conducting in the forward
direction.
A high initial diode surge CUlTent IS occurs
because
the capacitor acts as a short circuit when
power is first applied. The diode turns off at the peak
sinsusoidal
input voltage (E
Eo
peak input voltage
Eavg
average output vol tage

input frequency
u;
Eo sin u;t)
(Hz)
angular frequency
per second)
of input (u; = 2
time counted from beginning

RS
limiting resistance
RL
load resistance
1Tf
radians
of cycle
load capacitance
10
absolute
Ipk
actual peak current through rectifier
Irms
root-mean-squafe
Iavg
average current through rectifier
charge factor; 1 for half-wave circuit, Y2 for

doubler circuit, 2 for full-wave circuit
peak current through rectifier
current through rectifier
of the curve (pointO), and remains off until EC is again

equal to E (point A). The turn on point ton is determined by the time constant RL C, and affects the average,
peak, and rms currents through the device.
As stated above, the low
silicon rectifiers may result in
rent when the capacitive load
though the generator or source
forward voltage drop of

a very high surge of curis first energized.
Alimpedance may be high
Fig.!
- Circuit
the
load,
showing
use of capacitor
and resulting
Fig.2
to shunt
- Circuit
enough to protect the rectifier, in some cases additional resistance

must be added to the generator-rectifiercapacitor loop, as shown in Fig.2, to keep the surge
within device ratings.
The waveforms in Fig.2 show
that the capacitor voltage EC is no longer coincident
with the steady state supply voltage E during any part
of the cycle. The sum of the additional limiting resistance plus the source resistance
is referred to as the
total limiting resistance
RS' The ratio of RS to capacitive reactance 11 wC is an important consideration
in capacitor-input
rectifier circuits; ideally, RS should
be much smaller than 11 ",C. The magnitude of RS required in a particular circuit is calculated as described
below.
showing
tance,
waveforms.
...
...
0:
~IOO
""
~
z
::>
<>
'"
10
...
0:
::>
<Il
,.
<Il
0:
"
<14,
~~
r---
~
<1~-<>
J'\1q/
r-...
""
-1-.1."
...
0:
0:
"
z-........
<Il
SURGE RATING FOR/"

CRI
of Limiting
Resistance
The value of resistance required to protecl the rectifier is calculated from the surge rating chart for lhe
particular device used. Fig. 3 shows surge rating charts
for diffused junction slack rectifiers CR I and CR2.
Each point on the curves defines a surge rating by indicaling the maximum time for which the device can
safely carry a specific value of rms current.
With a capacitive load, maximum surge current occurs if the circuit is switched on when the input voltage
is near its peak value.
When the time constant RSC of
the surge loop is much smaller than the period of the
1<
q
"'"
SURGE RATING FOR

CR2
"-....1\.
"'"
-:c
~ ::::--....
'"
8
6
"- " ~
Calculation
resis-
waveforms.
'<
8 "
6
4
af limiting
addition
and resulting
"'"
"
Fig.3
.....
- Surge-rating
chart used for calculation
limiting resistance.
of
input voltage, the peak current is equal to the peak input voltage Eo divided by the limiting resistance
Rs'
and the resulting surge Is approximates an exponentially
decaying current with the time constant RSC,as follows:
IS
(Eo/RS)
exp (-1IRSC)
(1)
AN-3659
proxlmated
---------------------------------by the following equations:

Irms t = 0.0266
This value is then plotted on Fig.3 and intersects
the CR2 rating curve at 5.4 x 10-4 second. Therefore,
the equation for the time constant is given by
RSC 2. 5.4 x 10-4
The values for Eo and C specified by the circui t

design are used in Eq. (3) to obtain an equation which
relates the nns surge current lrms to surge duration t.
This equation may then be plotted on the surge rating
chart.
Because RsC is equal to t, any given value of
Rs defines a specific time t, and hence a specific point
on the plot of Eq.(3l. However, RS must be large enough
to make this point fall below the rating curve.
> 5Ax 10-4

S10-5
100
The following examples illustrate

described
for calculating
the limiting
quired in a particular circuit.
OHMS
the procedure
resistance
re-
IOfo'F
EpEAK
50000
OHMS
100
IOflF
OHMS
No.1:
Fig. 4 shows a half-wave rectifier circuit that has a 6o-Hz frequency and a peak input voltage
Eo of 4950 volts. The values of Eo and C are substituted in Eq.(3) to obtain the value of Irmst, as follows:
RL
Example
Fig.5.
Voltage-doubler
Eo
= 0.7 (4950)
= 0.0086
~mst
Irms t
Calculation
x 10-4
R 2. 2.7 x 10 -4 - 108 ohms

S
2.5 x 10-6
Because the value given for RS is 150 ohms, the circuit
has adequate surge-current protection for the rectifiers.
Fig.4
- Half-wove
Eo
rectifier
3820
V, f
rectifier
3820
V, f
circuit
(E
60 Hz).
(2.5 x 10 -6)
This value is then plotted on the surge-rating chart

of Fig. 3 and is found to intersect the CR J rating
curve at 2.7 x 10-4 second.
The minimum limiting resistance which affords adequate surge protection is then
calculated as follows:
RSC 22.7
circuit
(E
60 Hz).
3500
V rms,
of Rectifier
Current
The design of rectifier circuits using capacitive

loads often requires the determination of rectifier current waveforms in terms of average, nns, and peak currents. These waveforms are needed for calculations
of
circuit parameters, selection of components, and matching of circuit parameters with rectifier ratings.
Actual
calculation
of rectifier current is a rather lengthy process. A much more direct process is to use the currentrelationship charts shown in Figs. 6 and 7. Thesecurves
can be readily used to find peak or nns current if the
average current is known, or vice versa.
The ratios of peak-ta-average
current and rms-toaverage current are shown in Fig. 6 as functions of the
circuit constants nu;CRL and RS/nRL.
The quantity
wCRL is the ratio of resistive-to-capacitive
reactance
in the load, and the quantity RS/RL is the ratio of limiting resistance to load resistance.
The factor n is referred to as the "charge factor" and is simply a multiplier which allows the chart to be used for various
circuit configurations.
It is equal to unity for half-wave
circuits, \6 for doubler circuits, and 2 for full-wave circuits.
(These values actually represent the relative
quantity of charge delivered to the capacitor on each
cyclel.
10
nwCRL
10
10
10
lJi1fIt
J]
10'
8
6
4
..
8
100
%Rs/nRL=O.02
l""o-
30
100
are given in Figs. 8,9, and 10, respectively.

Output
ripple is shown in Fig. 11 for all three circuits.
Although these curves were originally calculated for vacuum-tube rectifiers, they are equlllly applicable to silicon rectifier circuits.
80
....
70
;:;
60
U
w
14
2
I
2
6 8
.8
,6
'i'
"-~
6 8
"
fi''"
Fig.6
50
- Relation
currents
of peak, average,
in capacitor-input
ond rms rectifier

circuits.
40
w
w
In many silicon rectifier circuits, RS may be completely neglected when compared with the magnitude of
RL. In such circuits, the calculation of rectifier current is even more simplified by the use of Fig. 7, which
gives current ratios under the limitation that RS/RL approaches zero. Even if this condition is not fully satisfied, the use of Fig. 7 merely indicates a higher peak
and higher rms current than will actually flow in the circuit; as a result, the rectifiers will operate more conservatively
than calculated.
This simplified solution
can be used whenever a rough approximation or a quick
check is needed on whether a rectifier will fit the application. When more exact information is needed, Fig.6
should be used.
"
30
20
10
0
01
Fig.8
- Relation
to direct
of applied
output
voltage
acitor.input
alternating
in half-wave
peak
voltage
cap-
circuits.
200
180
....
S
'"
z
"
U
160
1il
=>
0
'"
"'"
~
140
>
120
f'"i'
0
,
w
I 10-1
4 6 8I
EFFECTIVE
Fig.7
RATIO
4 6
~o
OF RESISTIVE
68102
TO CAPACITIVE
68103
IMPEDANCE(n
100
"'
68104
"
CRl
80
- Forward-current
ratios for rectifiers
in capacitor-input
circuits
in which the limiting
resistance
is much less than 71 (,;c.
Average output voltage Eavg is another important

quantity because it can be used to find average output
current. The relations between input and output vol tages
for half-wave, voltage-doubler,
and full-wave circuits
Fig.9
- Relation
to direct
of applied
output
voltage
voltage
doubler
alternating
peak
in capacitor-input
circuits.
voltage
0.05
0.5 01
I
2
10
The values given above are then plotted in Fig. 8 to

determine average output voltage and average output
current, as follows:
12,5
15
Eavl
6
8
% RS/RL~
20
Eo
98%
W.98)
Eavg
=
=
Iavg
Iavg
(4950)
Eavl
4850 volts
RL
4850/200,000
24.2 milliamperes
This val ue of Iavg is then substituted in the ratio of

Irmllavg obtained from Fig. 6, and the exact value of
rms current in the rectifier is determined, as follows:
Irml
Fig. 10 - Relation of applied alternating peak voltage

to direct output voltage in full-wave capacitor-input
circuits.
PARAMETER
A":'5s,'RL
,
::iO-iO
----30
Iavg
4.4
Irms
(4.4) (24.2)
Simplified solution using Fig. 7: Average output current is approximately equal to peak input voltage divided
by load resistance, as given by
Iavg
E/RL
Iavg
4950/200,000
~-'IO
.-01
10_
--10
-~IO
__ 3D
~
~
= 24.7
milliamperes
This value of Iavg is then substituted in the ratio of

Irms/lavg obtained from Fig. 7 and the approximate rms
current is determined,. as follows:
, ---0.1
o
w
= 107 milliamperes
Irms/lavg
= 5.7
Irms = (5.7) (24.7)
= 141 milliamperes
Example No.4:
For the doubler circuit of Fig. 5, the
resistive-to-capacitive
reactance is determinedasfollows:
&0'
~
wCRL
1
u; CRL
~
o
n u; CRL
Exact solution:
follows:
=
=
(2 n) (60) (10-5) (50,000)

189
'" 94
The ratio of Rs to RL is determined as
~_
% R
L
100 x 100%
50,000
This percentage is then used in conjunction with Fig. 9,

and Eavg and Iavg are determined as follows:
The following examples illustrate the use ofFigs.8
through 11 in rectifier-current calculations.
Both exact
and approximate solutions are given for each example.
Example No.3:
For the half-wave circuit of Fig. 4,
the resistive-to-capacitive
reactance is found to be:
Eav/Eo
Iavg
Iavg
w CRL
= (2 n )(60) (2.5 x 10-6)
w CRL
186%
Eavg
(1.86) (3820)
= Eav/RL
= 7100/50,000
7100 volts
142 milliamperes
(200,000)
189
Exact solution using Fig. 6:

The ratio <:i Rs to R
L
must first be calculated as follows:
The values given above are then plotted in Fig. 6, and

the rms current is calculated as follows:
Irmllavg
Irms
3.7
= (3.7)
(142)
= 525
milliamperes
Simplified solution:
by
The average output current is given
lavg
= 2E/RL
Iavg
= (2 x 3820)/50,000
This value is then plotted

is determined as follows:
Irm/Iavg
Irms
= 153 milliamperes
in Fig. 7, and the rms cur-
= 4.8
= (4.8)
= 734
(153)
milliamperes
As previously noted, the simplified solution in both examples predicted a higher rms current than the actual
value: about 32 per cent higher in Example No. 3 and
40 per cent higher in Example No.4.
The amount of
error involved depends on both UJ CRL and Rs/RL.
In most technical data for rectifiers,

the currentversus-temperature
ratings are gi ven in terms of average
current for a resistive load with GO-Hz sinusoidal input
vol tage.
However, when the ratio of peak-to -average
current becomes higher (as with capacitive
loads),
j unction heating effects become more and more dependent on rms current rather than average current. Therefore, the capacitive-load
ratings should be obtained
from a curve of rms current as a function of temperature. The average current-rating curves for a sinusoidal
source and resistive load may be converted to rms-rating curves simply by multiplying the current axis by
1.57 because this value

current for such service
u;CRL in Figs. G and 7).
is shown in Fig. 12 for
rectifiers.
is the ratio of rms-ta-average

(as shown by Irm/Iavg
at low
An example of this conversion
the rating curves of seven stack
The following examples

rms current ratings.
illustrate
Example No.5:
For the half-wave circuit of Fig. 4, it
was found in Example No.3 that the actual rms current
in the rectifier is 107 milliamperes.
The rms ratingcurve
in Fig. 12 shows that the CR7 may carry up to 107 mil
liamperes at ambient temperatures up to 1150C.
Example No.6: For the doubler circuit of Fig.5, the actual rms current was determined to be 525 milliamperes.
The !'Ins rating curve for the CR6 in Fig. 12 shows
that the circuit may be operated up to 880 C ambient
temperature.
Example No.7:
If the higher values of TInS current
given by the simplified solution are used instead of the
actual currents, the rms rating curves of Fig. 12 also
give more conservative
ratings because they predict a
lower value for the maximum permissible ambient temperature.
For example, for the half-wave circuit the exact rms current was found to be 107 milliamperes,
and
the approximate value was 141 milliamperes.
These
current values correspond to a maximum ambient temperature rating of 1150C by the exact solution and 1100C
by the approximate solution.
CR'
11000
z
I-
1600 ~
CR2
1400~
OJ
CR'
~ 800
::>
CR4
~ 600
'"~ 400
CR6
CR5
OJ
1200
1000
800
CR7
600 ~
x"
":~:> 200
400
200 "
"
0
-80
-60
-40
-20
AMBIENT
Fig. 72 - Current
silicon
20
40
60
80
100
140
TEMPERATURE-oC
as a function
rectifier
the use of the
of temperature
stacks.
far
by
J. V. YONUSHKA
In the control of ac power by means of semiconductor

devices. emphasis has been placed upon limiting the complexity of the circuits involved, the cost of the system, and
the over-all package size. With the development
of the
bidirectional
triode thyristor,
commonly
known as the
triac, all of these goals can be achieved. A triac can perform the functions of two SeR's for full-wave operation
and can easily be triggered in either direction to simplify
gate circuits. Because they are rated for 120-volt and 240volt line operation,
triacs are readily adaptable
for the
control of power to any equipment being operated directly
from ac power lines. When used for ac power control,
triacs add new functions to many designs. improve performance. and provide maximum efficiency and high reliability. This Note describes triac operating
characteristics
and provides guidance
in the use of triacs for specific
applications.
Principal
Voltage-Current
Characteristic
then reverts again to the high-impedance

or OFF state.
If the voltage across the main terminals of the triac is
reversed, the same switching action occurs as shown by
the curve in quadrant
III. Thus, the triac is capable of
switching from the OFF state to the ON state for either
polarity of voltage applied to the main terminals.
Diagram
Fig. I shows the principal voltage-current

characteristic
of a triac. This curve shows the current through the triac
as a function of the voltage applied between main terminals
Nos. I and 2. In quadrant I, the voltage on main terminal
No. 2 is positive with respect to main terminal No. I; in
quadrant III. the voltage on main terminal No.2
is negative with respect to main terminal No. I. When a positive
voltage is applied to main terminal No.2, as shown by the
curve iJl quadrant I, a point is reached, called the breakover voltage V BO, at which the device switches from a
high-impedance
state to a low-impedance
state. The current can then be increased through the triac with only a
small increase in voltage across the device. The triac remains in the ON state until the current through the main
terminals drops below a value, called the holding current,
which cannot maintain the breakover condition. The triac
QUADRANT
MAIN TERMINAL
NEGATIVE
ONSTAT[/
Gate Characteristics
When a trigger current is applied to the gate terminal
of a triac, the breakover voltage is reduced. After the triac
is triggered, the current flow through the main terminals is
independent of the gate signal and the triac remains in the
ON state until the principal current is reduced below the
holding-current level. The triac has the unique capability of

being triggered by either a positive or a negative gate signal
regardless of the voltage polarity across the main terminals
of the device. Fig. 2 illustrates the triggering mechanism
and current flow within a triac. The gate trigger polarity is
always referenced to main terminal No. I. The potential
difference between the two terminals is such that gate
current flows in the direction indicated by the dotted
arrow. The polarity symbol at main terminal No.2 is also
referenced to main terminal No. I. The semiconductor
materials between the various junctions within the pellet
are labeled p and n to indicate the type of majoritycarrier concentrations
within the material.
Because the principal current influences the gate trigger

current, the magnitude of the current required to trigger
the triac differs for each mode. The operating modes in
which the principal current is in the same direction as the
gate current require less gate trigger current, while modes
in which the principal current is in opposition to the gate
current require more gate trigger current.
Like many other semiconductor parameters, the magnitude of the gate trigger current and voltage varies with the
junction temperature. As the thermal excitation of carriers
within the semiconductor increases, the increase in leakage
current makes it easier for the device to be triggered by a
gate signal. Therefore, the gate becomes more sensitive in all
operating
modes
as the junction
temperature
increases.
Conversely, if the triac is to be operated at low temperatures, sufficient gate trigger current must be provided to
assure triggering of all devices at the lowest operating
temperature expected in any particular application. Variations of gate trigger requirements are given in the data
sheets for individual triacs.
For the various operating modes, the polarity of the

voltage on main terminal No.2 with respect to main terminal No. I is given by the quadrant in which the triac
operates, (either I or Ill) and the polarity of the gate signal
used to trigger the device is given by the propcr symbol
next to the operating quadrant. For the I (+) operating
mode, therefore, main terminal No.2 and the gate are both
positive with respect to main terminal No. I. Initial gate
current flows into the gate terminal, through the p-type
layer, across the junction into the n-type layer, and ".Jut
main terminal No. I, as shown by the dotted arrow. As
gate current flows, current multiplication occurs and the
regenerative action within the pellet switches the triac to its
ON state. Because of the polarities indicated between the
main terminals, the principal current flows through the
pnpn structure as shown by the solid arrow. Similarly, for
the other three operating modes, the initial gate current
flow is shown by the dotted arrow, and principal current
flow through the main terminals is shown by the solid
arrow.
Because the light output of an incandescent lamp depends upon the voltage impressed upon the lamp filament,
changes in the lamp voltage vary the brightness of the
lamp. When ac source voltages are used, a triac can be
used in series with an incandescent lamp to vary the voltage to the lamp by changing its conduction angle; Le.,
the portion of each half cycle of ac line voltage in which
the triac conducts to provide voltage to the lamp filament.
The triac, therefore, is very attractive as a SWitching element in light-dimming applications.
To switch incandescent-lamp loads reliably, a triac must
be able to withstand the inrush current of the lamp load.
The inrush current is a result of the difference between
the cold and hot resistance of the tungsten filament. The
cold resistance of the tungsten filament is much lower than
the hot resistance. The resulting inrush current is approximately 12 times the normal operating current of the lamp.
The simplest circuit that can be used for light-dimming
applications is shown in Fig. 3 and uses a trigger diode
in series with the gate of a triac to minimize the variations
in gate trigger characteristics. Changes in the resistance in
series with the capacitor change the conduction angle of
the triac.
The capacitor in the circuit of Fig. 3 is charged
through the control potentiometer and the series resistance,
The series resistance is used to protect the potentiometer
potentiometer is at its minimum resistance setting. This
resistor may be eliminated if the potentiometer can withstand the peak charging current until the triac turns
on. The trigger diode conducts when the voltage on the
capacitor reaches the diode breakover voltage. The capacitor then discharges through the trigger diode to produce a
current pusle of sufficient amplitude and width to trigger
the triac. Because the triac can be triggered with either
are equal to 82 in magnitude. When the circuit resistance is

by a change in the potentiometer
selling the triac
increased
is still triggered,
but at a smaller
ally, the resistance

120VAC
OR
240VAC
60 Hz
so great
that the voltage
the breakover
conduction
angle. Eventu-
in series with the capacitance
voltage
on the capacitor
of the trigger
becomes
does not reach
diode. The circuit
turns off and does not turn on until the circuit

is again
reduced
The hysteresis
greater
J 20VAC,
60Hz
240VAC, 60Hz
R,
200k!1,
Y2W
250kll,lW
R,
3.3kfl.
If2W
4.7kn,
C,
O.lpF,200V
O.lpF,lOOV
C,
If2W
to allow
the trigger
diode
effect makes
the voltage
load appear
than would
is initially
turned
The hysteresis
tor through
T2800B
V2
D3202U
D3202U
diode.
does not lose as much charge

produces
a smaller
is reduced.
the capacitor
while triggering
the triac, and
effect.
through
to compensate
trigger current
As a result
the trigger
of the gate trigger
The size of the trigger
be increased
of the capaci-
Consequently,
hysteresis
discharge
how-
current
capacitor
pulse
may have to
for the reduction
of the gate
120 VAC
OR
rv 240VAC
60 Hz
120VAC,
240VAC,
60Hz
60Hz
3.3kQ,
V'lW
4.7kf!. lf2W
200H},
V'lW
O.1,uF,200V
250kll,lW
O.lpF,400V
T2800B
T2800D
D3202U
D3202U
Fig. 5 - Single-time-constant light-dimmer circuit with

series gate resistor.
The double-time-constant
lhe performance
cuit. This circuit
of
circuit
in Fig. 6 improves
the single-time-constant
uses an additional
control
RC network
conduction
angles.
The additional
mizes the hysteresis
for the ac supply
circuit
of Fig. 6. Because
the input capacitor

the trigger capacitor
the brea1<over voltage
and causes
at small
also mini-
effect. Fig. 7 shows the voltage
forms
ducts
RC network
and the trigger

of the voltage
capacitor
drop
or
cir-
to extend
the phase angle so that the triac can be triggered
Fig. 4 - Waveforms showing interaction of control

network and trigger diode.
of the
diode,
pulse.
suddenly. The charge on the capacitor is smaller than when

the trigger diode did not conduct. As a result of the different voltage conditions
on the capacitor,
the breakover
diode is reached earlier in the next
is labeled point B on the capacitorconduction angle 8" corresponding
to
8,. All succeeding conduction angles
by use of a resistor
slows down the discharge
ever, the peak magnitude
voltage of the trigger

half-cycle. This point
voltage waveform. The
point B is greater than
much
when the circuit
on.
the trigger
slower capacitor
polarity of gate signal. the same operation occurs on the

opposite half-cycle of the applied voltage. The triac, therefore, is triggered and conducts on each half-cycle of the
input supply voltage.
The interaction of the RC network and the trigger diode
results in a hysteresis effect when the triac is initially triggered at small conduction
angles. The hysteresis effect is
characterized
by a difference in the control potentiometer
selling when the triac is first triggered and when the circuit
turns off. Fig. 4 shows the interaction
betwecn the RC
network and the trigger diode to produce the hysteresis
effect. The capacitor
voltage and the ac line voltage are
shown as solid lines. As the resistance in the circuit is
decreased from its maximum value, the capacitor voltage
reaches a value which fires tlle trigger diode. This point is
designated
A on the capacitor-voltage
wave-shape.
When
the trigger diode fires, the capacitor discharges and triggers
the triac at an initial conduction angle 8,. During the forming of the gate trigger pulse, the capacitor voltage drops
to be fired.
in series with the trigger diode and gate, as shown in Fig. 5.

The series resistor
V,
be expected
effect can be reduced
O.lpF,400V
O.lpF,lOOV
T2800D
normally
then
resistance
waveof the
across
R3,
C" charges to a higher voltage than

C:,. When the voltage on C3 reaches
of the trigger
the capacitor
diode,
to discharge
the diode conand produce
the gate current pulse to trigger the triac. After the trigger
diode turns off, the charge on C3 is partially restored by
120 VAC
OR
240 VAC
60Hz
20VAC, 60Hz
240VAC,60Hz
15kU,2W
120VAC, 60Hz
240VAC, 60Hz
2.2kU, Y,W
l00kU, Y,W
O.1I'F,200V
T28008
D3202U
3.3kU. Y,W
200kU,lW
O.1I'F.400V
T2800D
D3202U
and reduces
its resistance,
30kU.3W
the voltage on the capacitor
no longer reach the breakover

and the circuit
For
turns off.
applications
requiring
operation
pinges on the surface of the photocell,

is recommended.
In this
circuit,
low
allows the triac to be triggered
removed
from the photocell
renders
prevents
the circuit
the
when
resistance
from
im-
of
the
on. When light is
the increased
triac
light
the circuit of Fig. 9
photocell
photocell
can
voltage of the trigger diode,
resistance
being
of the
triggered
and
inoperative.
Fig. 7 - Voltage waveforms of doubletime-constant

control circuit.
the charge from the input capacitor C2. The partial restoration of charge on C3 results in better circuit performance
with a minimum of hysteresis.
For applications requiring a light-activated

circuit, such
as outdoor lights or indoor night lights, the circuit shown in
Fig. 8 can be employed. Although this circuit functions
in the same manner as the light-dimming
circuit, the
photocell controls its operation. When the light impinges
on the surface of the photocell, the resistance of the photocell becomes
capacitor
trigger
light
low and prevents
from increasing
diode.
source
The
the voltage
to the breakover
circuit
is removed,
is then
the
on the trigger
voltage
inoperative.
photocell
of the
When
becomes
the
a high
Radio
Frequency
Interference
The fast switching
action
of triacs when
into resistive loads causes the current
resistance. The voltage on the trigger capacitor then in

creases to the breakover voltage of the trigger diode and
of time. This fast switching
action produces
causes the diode to fire. The trigger
which is largely composed
of higher-harmonic
capacitor
discharge
triac conduct
to be triggered
through
and operates
the trigger
the circuit.
on each half-cycle
the load as long as the resistance

When light again impinges
pulse formed
diode
by the
makes
the
The triac continues
and supplies
of the photocell
on the surface
power to
is high.
of the photocell
taneous value determined
that have an amplitude

In phase-control
current
they turn
on
to rise to the instan-
by the load in a very short period
varying
applications,
step is produced
inversely
a current
step
frequencies
as the frequency.
such as light dimming,
on each half-cycle
this
of the input
voltage. Because the switching occurs many times a second.

a noise pulse is generated
into frequency-sensitive
devices
such as AM radios and causes annoying interference.

The
amplitude
of the higher frequencies
in the current step is
of such low levels that they do not interfere with television
or FM radio.
There are two basic types of radio-frequency
interference
(RFI) associated
with the switching
action of triacs. One
form, radiated
RFI, consists of the high-frequency
energy
radiated through the air from the equipment.
In most cases,
this radiated RFI is insignificant
unless the radio is located
very close to the source of the radiation.
Of more significance
is conducted
RFI which is carried
through
the power lines and affects equipment
attached
to the same power lines. Because the composition
of the
current waveshape
consists of higher frequencies,
a simple
choke placed in series with the load slows down the current rise time and reduces
the amplitude
of the higher
harmonics.
To be effective, however, such a choke must be
quite large. A more effective filter, and one that has been
found
adequate
for most light-dimming
applications
is
shown in Fig. 10. The LC filter provides adequate
attenuation of the high-frequency
harmonics
and reduces the
noise interference
to a low level.
120 VAC
OR
240 VAC
60 HZ
'20VAC, 60Hz
240VAC, 60Hz
lHl.V,W
2k!1. Y2W
T2700B
T2700D
'\.;
Fig. 12 - AC Triac Switch Control From DC Input:

at 120 VAC, Y = T2700B; at 240 VAC, Y =
120 VAC
OR
240 VAC
60 Hz
Fig. 10 - RFI-suppression networks: at 120 VAC, C = 0.1 IlF,

200 V; at 240 VAC, C = O.1 IlF,400 V.
Triacs can be used very effectively

to apply power to
motors and perform such functions as speed control. reversing, full power switching,
or any other desired operating
condition
that can be obtained
by a switching action. Because most motors are I joe-operated,
the triac can be
used as a direct replacement
for electro-mechanical
switches.
In proper control circuits, triacs can change the operating
characteristics
of motors to obtain many different
speed
and torq ue curves.
A very simple triac static switch for control of ac motors
is shown in Fig. II. The low-current
switch controlling
the gate trigger current
can be any type of transducer,
such as a pressure
switch, a thermal
switch, a photocell,
or a magnetic reed relay. This simple type of circuit allows
the motor to be switched
directly
from the transducer
switch without
any intermediate
power switch or relay.
For dc control, the circuit of Fig. 12 can be used. By
use of the dc triggering
modes, the triac can be directly
triggered from transistor
circuits by either a pulse or continuous signal.
T2700D.
Fig. 13 shows a single-time-constant

circuit which can
be used as a satisfactory
proportional
speed control
for
some applications
and with certain
types of induction
motors, such as shaded pole or permanent
split-capacitor
motors, when the load is fixed. This type of circuit is best
suited to applications
which require speed control
in the
medium to full-power
range. It is specifically
useful in applications
such as fans or blower-motor
controls,
where
a small change in motor speed produces a large change in
J 20VAC, 60Hz
O.22pF,200V
T2700B
240VAC, 60Hz
O.22pF,400V
T2700D
air velocity. Caution must be exercised if this type of circuit is used with induction
motors because the motor may
stall suddenly if the speed of the motor is reduced below
the drop-out
speed for the specitic operating
condition
determined
by the conduction
angle of the triac. Because
the single-time-constant
circuit cannot provide speed control of an induction
motor load from maximum
power to
full off, but only down to some fraction of the full-power
speed, the effects of hysteresis
described
previously
are
not present. Speed ratios as high as 3: 1 can be obtained
from the single-time-constant
circuit
used with certain
types of induction
motors.
Because motors are basically
inductive
loads and because the triac turns off when the current reduces to zero,
the phase difference
between the applied voltage and the
device current causes the triac to tUTn off when the source
voltage is at a value other than zero. When the triac turns
off, the instantaneous
value of input voltage is applied
directly to the main terminals of the triac. This commutating voltage may have a rate of rise which can retrigger the
triac. The commutating
dv/dt can be limited to the capability of the triac by use of an RC network
across the
device, as shown in Fig. 13. The current
and voltage
waveshapes
for the circuit are shown in Fig. 14 to illustrate the principle of commutating
dv/dt.
electronic
switch used with some type of sensor to reverse the direction
of the motor. A resistance
is added in
series with the capacitor
to limit capacitor
discharge
current to a safe value whenever
both triacs are conducting
simultaneously.
Simultaneous
conduction
can easily occur
because
the triggered
triac remains
in conduction
after
the gate is disconnected
until the current reduces to zero.
In the meantime, the nonconducting-triac
gate circuit can
be energized
so that both triacs are ON and large loop
currents
are set up in the triacs by the discharge
of the
capacitor.
COMMUT ATING
dv/dt
Fig. 14 - Waveshapes of commutating

characteristics.
dv/dt
In many industrial applications, it is necessary to reverse

the direction of a motor, either manually
or by means of
an auxiliary
circuit.
Fig. 15 shows a circuit which uses
two triacs to provide this type of reversing motor control.
The reversing switch can be either a manual switch or an
REVERSING
I
I
I
120VfJC.,
OR
240VN::.
'\...., 60 Hz
I
.-J
T2800B
T2800B
I
I
I
I
-,
I MOTOR
J 20VAC,
I
I
1
I
I
60Hz
240VAC, 60Hz
T2800D
T2800D
The triac motor-reversing

circuit can be extended
to
electronic
garage-door
systems which use the principle
of
motor reversing
for garage-door
direction
control.
The
system contains a transmitter, a receiver, and an operator
to provide remote control for door opening and closing.
The block diagram in Fig. 16 shows the functions required
for a complete
solid-state
system. When the garage door
is closed, the gate drive to the DOWN triac is disabled by
the lower-limit
closure and the gate drive to the UP triac
is inactive
because
of the state of the flip-flop.
If the
transmitter
is momentarily
keyed, the receiver
activates
the time-delay
monostable
multivibrator
so that it then
changes the flip-flop state and provides
continuous
gate
drive to the UP triac. The door then continues
to travel
in the UP direction
until the upper-limit
switch closure
disables gate drive to the UP triac. A second keying of the
transmitter
provides the DOWN triac with gate drive and
causes the door to travel in the DOWN direction
until the
gate drive is disabled by the lower limit closure. The time
in which the monostable
multivibrator
is active should
override normal transmitter
keying for the purpose of eliminating erroneous
tiring. A feature of this system is that,
during travel, transmitter
keying provides motor reversing
independent
of the upper- or lower-limit
closures.
Additional features, such as obstacle obstructions,
manual control, or time delay for overhead
garage
lights can be
achieved very economically.
r20VAC
OR
240VAC
60 Hz
Fig. 16 - Block diagram for remote-control
solid-state
garage-door systems.
In applications
in which
the
hysteresis
effect
can
tolerated or which require speed control primarily

medium to full-power
such
as that
shown
range. a single-time-constant circuit

in Fig.
13 for
induction
motors
also be used for universal motors. However.

desirable
power
to extend
the range
of speed
ON to very low conduction
constant
circuit
sary to trigger
a minimum
shown
angles.
and also provides

When
full-
the delay neces-
the triac at very low conduction
potentiometer.
from
The double-timc-
in Fig. 17 provides
of hysteresis.
can
it is usually
control
angles
with
practically
full
power to the load at the minimum-resistance

the control
he
in the
There are three general categories

of solid-state
control
circuits
for electric
heating
elements:
on-off
control,
phase control,
and porportional
control
using integralcycle synchronous
switching,
Phase-control
circuits,
such
as those used for light dimming
are very effective
and
efficient for electric heat control except for the problem
of RFI. In higher-power
applications,
the RFI is of such
magnitude
that suppression
circuits to minimize the interference become quite bulky and expensive,
An on-off circuit for the control of resistance-heating
elements
is shown in Fig. 18. The circuit also provides
synchronous
switching close to the beginning
of the zerovoltage crossing of the input voltage to minimize RFI. The
thermistor
controls the operation
of the two-transistor
regenerative switch, which, in turn, controls the operation
of the triac. When the temperature
being controlled
is low,
the resistance of the thermistor
is high and the regenerative
switch is OFF. The triac is then triggered directly from the
line on positive half-cycles of the input voltage. When the
triac triggers and applies voltage to the load, the capacitor
is charged
to the peak value of the input voltage,
The
capacitor
discharges
through
the triac gate to trigger the
triac on the opposite half-cycle, The diode-resistor-capacitor
"slaving" network triggers the triac on negative half-cycles
of the ac input voltage after it is triggered on the positive
half-cycle
to provide
integral cycles of ac power to the
load.
When
the temperature
desired value as determined
tor regenerative
positive
away
switch
input-voltage
from
the triac
long as the resistance
being controlled
by the thermistor,
conducts
cycle
gate.
at the beginning
to shunt
The
reaches
the
the transis-
triac
of the thermistor
the
does
trigger
of the
current
not conduct
as
is low enough
to
make the transistor regenerative switch turn on before the

triac can be triggered.
position of
this type of control
cir-
cuit is used, an infinite range of motor speeds can be obtained
from
very low to full-power
speeds.
120 VAC
OR
240VAC
60 Hz
120VAC
l00kfl,
THERMISTOR
30000
AT
OPERATING
TEMP
60Hz
y,w
240VAC,
60Hz
200kn,lw
c,
O.lpF,200V
O.lpF,400V
C,
O.22pF,200V
O.22pF,400V
T2700B
T2700D
120VAC.60Hz
2.2kn,Sw
O,SpF,200V
T4700B
240VAC
60Hz
3.9kn,Sw
O.SpF,400V
T4700D
Proportional
Integral-Cycle
Control
On-off controls have only two levels of power input to

the load. The heating
coils are either energized
to full
power or are at zero power. Because of thermal time constants, on-off controls produce a cyclic action which alternates between
thermal
overshoots
and undershoots
with
puv:' !"~solution.
This disadvantage
is overcome and RFI is minimized
by
use of the concept of integral-cycle
proportional
control
with synchronous
switching.
In this system. a time base is
selected and the on-time of the triac is varied within the
time base. The ratio of the on-to-off
time of the triac
within this time interval depends upon the power required
10 the heating elements
to maintain the desired temperature.
Fig. 19 shows the on-off ratio of the triac. Within
the
time period. the on-time varies hy an integral number of
cycles from full ON to a single cycle of input voltage.
Fig. 20. As the sawlOoth

voltage
increases,
a level is
reached which turns on power to the heating elements. As
the temperature
at the sensor changes, the de level shifts
accordingly
and changes the length of time that the power
is applied to the heating elements
within the established
time.
When the demand for heat is high, the de control signal is high and little power is supplied continuously
to the
heating elements. When the demand for heat is completely
satisfied, the de control
signal is low and nO power is
supplied to the heating elements.
Usually a system using
this principle
operates
continuously
somewhere
between
full ON and full OFF to satisfy the demand for heat.
TRIAC
OFF
~~-i-:;-' ;-/u
r----
TRIAC
I----
TIME
ON ~
BASE
HIGH
HEAT
~~~~~
~
TIME
14-
BASE
--
----l
.~
One method of achieving integral cycle proportional

control is 10 use a fixed-frequency
sawtooth
generator
signal
which is summed with a de control signal. The sawtooth
generator
establishes the period or time base of the system.
The de control signal is obtained
from the output of the
temperature-sensing
network. The principle is illustrated
in
A proportional
integral-cycle
heat control
system
is
shown
in Fig. 21. The ramp voltage
is generated
by
charging of capacilOr C through resislOr R for approximately
2 seconds for the values shown. The length of the ramp
is determined
by the voltage magnitude
required
to trigger the regenerative
switch consisting of Q, and Q2' The
temperature
sensor consisting of Q:: and Q., together with
the controlling
thermistor
Th. establishes
a voltage level
at the base of Q:: which depends upon the resistance value
of the thermistor.
Q:: and Q. form a bistable multivibralOr.
The state of the multivibrator
depends
upon the base
bias of Q::. When Q:: is conducting,
Q. is cut off. The
pulse generator
is energized and generates pulses 10 trigger
the triac. The output of the pulse g~nerator
is synchronized to the line voltage or. the negative
half-cycle
by
02 and R:: and on the positive half-cycle by D, and R::.
The pulses are. therefore.
generated
at the zero-voltage
crossings and trigger the triaes into conduction at only
these points.
120 VAC
1200~AC 24~~
AC
24QVAC
IOflF
115K
60kll, Y,W
5.6kll,2W
33kll,y,w
57kll, Y,W
2N5441
NOTE: ALL RESISTORS '12 W,! 10 '"4

UNLESS OTHERWISE SPECIE
THERMISTOR APPROX. 3000 n
AT OPERATING TEMP.
120kll. y,w
3.3kll,2W
or
2N5444
2N5442
or
2N5445
Light Dimmers Using Triacs
Introduction
A simple,
a diac,
inexpensive
triac
light-dimmer
and RC charge-control
is a two-terminal
ac switch
which
circuit
The diac
is changed
from the
non-conducting
state to the conducting
propriate
voltage
of either polarity.
three-terminal
ac switch
conducting
tive
state
or negative
voltage
This
Note
triac
in light-dimming
circuit
is
addition,
cuit
describes
cuits
are
values
240-volt,
volved
be
and
are
its
operation
showing
Hz operation.
trouble-shooting
the circuits
chart
described.
added
120-volt,
the
light-control
In
to improve
cir-
complete
cir-
Three
tables
for
a posi-
to trigger
The basic
discussed.
with
in building
when
to the gate terminal.
components
used
50/60
is applied
circuits.
introduced
shown,
to
from the non-
state
the use of the diac
the various
performance
state by an apThe triac is a
which is changed
to the conducting
contains
network.
the
60-Hz
and
details
are also discussed
inand a
is included.
Ci rcuit Description
The triac
terminal
or bidirectional
solid-state
or main terminals
control. electrode
shows
tween
plied
either
the
when bias
state
voltage-current
the device
The
device
is applied,
by a pulse
thyristor
to as T 1 and T 2' and the

to as the gate.
Fig. 1
characteristic
observed
For either
is bistable:
(off state)
normally
polarity
the triac
beof ap-
exhibits
or a low impedance
assumes
but can be triggered
of current,
is a three-
between gate and T l'

on state until current
external circuitry.
The device then remains

is reduced close to zero
in the
by the
The two power electrodes
are referred
is referred
a high impedance
(on state).
triode
switch.
the power electrodes.

voltage,
ON 5TATE/
component
operation
Mechanical
MAIN TERMINAL
NEGATIVE
of either
the off state

into the on
polarity,
applied
The diac or symmetrical

trigger diode is a two-terminal bidirectional
switch with a voltage-eurrent
characteristic
as shown
high-impedance,
til
the
applied
in Fig.
2.
The
low-leakage-current
voltage
VSO' of the order
reaches
of 35 volts.
device
exhibits
characteristic
the
breakover
Above
this
a
un-
voltage
voltage
the
device exhibits
a negative resistance,
so that voltage
decreases
as current
increases.
In light-dimmer
circuits
a diac
is used
in conjunction
with a capacitor
to
generate
current
pulses
duction.
The
voltage
creases
until
voltage
breaks
capacitor
which trigger
the triac
on the
and
it reaches
back
VBa,
diac
into con-
capacitor
at which point
and a pulse
of current
in-
the
flows
diac
as the
discharges.
control
must be turned
back to a much lower setting
fore the light goes completely

Besides
cause
poor control,
tinguished
levels,
beyond
Fig.
cuit
3 shows
the basic
with the triac
During
the
connected
the beginning
off-state.
load.
Because
drives
and
of each
capacitor.
When
breakover
voltage
charges
this
the triac
through
through
point,
to the
for the
either
polarity.
duced,
the
across
the
capacitor
VBa
of the
voltage
gate,
turning
of that
is repeated
capacitor
triac
the
large
cycle
dis-
first
At
from the triac

This
cycle
resistance
of
is re-
more rapidly
and VBa is
the power apof light.
If the
ac
smaller
the
half cycle.
reached
earlier
in the cycle,
increasing
plied to the load and hence the intensity
Hysteresis
reaches
half
turned
turned
on.
as a result
as that caused
etc.,
the light
is again
is caused
by an abrupt
turned
decrease
pacitor
voltage when triggering
begins.
the charging
cycle of the capacitor-diac
capacitor
for every
potentiometer
charges
poten-
the
on the triac.
is transferred
remainder
If the
the
such
oil burner,
may go out and stay out until the control

up to the starting
point.
ap-
and charges
diac,
it initially
on one half cycle
appliance,
At low
is normally
drop in line voltage
a heavy
be-
may be ex-
is in
voltage
with the
voltage
the potentiometer
the triac
of events
the triac
line
is in parallel
the
the line voltage
load
sequence
cir-
with the load.
half cycle
the entire
control
and none appears across the
capacitor,
current
light
in a series
As a result,
pears across the triac,

tiometer
triac-diac
light
drop in line voltage.
at which
is missed
of a momentary
by starting
the
the potentiometer
the selling
When triggering
is undesirable
levels,
by a momentary
illumination
back
hysteresis
at low illumination
be-
out.
sine
wave
ac sine
of the
point
represents
wave
the
represents
capacitor.
Gate
of intersection
line
the
voltage;
normal
triggering
of the
in ca-
Fig. 4 shows
circuit.
The
occurs
two waves.
the
charging
at the
At this
point, however, there is an abrupt decrease in the capacitor voltage (dashed line).
As a result, the capacitor begins to charge during the next half cycle at a lower voltage and reaches
the trigger voltage in the opposite direction
earlier
in the cycle (2nd (Actual)
Gate
Trigger
Point).
some voltage
Hysteresis
is reduced
on the capacitor
during
by maintaining
gate triggering.
potentiometer resistance is increased, triggering occurs

later,
load
power
is reduced,
and the
light
intensity
is
decreased.
Although
the
basic
with
the component
tional
components
and sections
duce hysteresis
the light-control
quency
light-control
arrangement
circuit
shown
operates
in Fig.
are usually
3, addi-
added
effects,
extend the effective
potentiometer,
and suppress
to re-
range of
radio-fre-
interference.
Fig.4
- Charging
Hysteresis
As applied
fers
which
trol
range
to light controls,
to a difference
at \'!h ich the
light
before
initially
light
potentiometer
turns-on
and the
With high hysteresis,
to be turned
the
the term hysteresis
in the control
it is extinguished.
may have
cycle
of the capacitor-diac
in the circuit
turns
across
after
re-
setting
setting
at
the con-
35 per cent
on at all,
network
of Fig.3.
of its
which
the
Some
connected
Although
mount
does
improvement
is
realized
in series with the diac,

this positive
resistance
of negative
resistance
not drop as much,
it also
when
a resistor
as shown in Fig.
reduces
the net
so the
capacitor
decreases
is
5.
a-
voltage
the magnitude
t20VAC
OR
240VAC
60 Hz
Fig.S - Light-control circuit incorporating

series with the diac.
of the gate current
pacitor
pulse,and
may be required.
when a second
in
forming
6,
capacitor
in
a larger-valueca-
More significant
is obtained
Fig.
therefore,
a resistor
improvement
'is added
as shown
a "double-time-constant"
circuit.
Fig.8 - Double-time-constant
tiometer is connected
After the control
tial
turn-on
control
range,
point
action
leaving
of three
This
turn-on
connected
or minus
across
difference
of ini-
across
can be used to compensate
with a toler-
A trimmer
the potentiometer,
as shown
for component
inter-
capacitor,
may have values
20 per cent.
because
by the
(potentiometer,
the
to con-
occurs
is determined
components
each of which
of plus
the point
at 40 per cent
only 60 per cent effective
intensity.
of initial
and diac)
ance
is assembled,
may be located
trol the light

the
circuit
circuit in which the potendirectly to the diac.
resistor
in Fig.
variations
9,
and
move the initial turn-on point back to the end of the

control range.
The trimmer can be a variable
resistor
which
is set
assembled,
determined
The
added
to a higher
capacitor
voltage
age on C 1 after
Fig.
7.
C2 reduces
by charging
than C l' and maintaining
triggering.
As gate triggering
the gate current
hysteresis
pulse.
C2 R time constant,
The effect
occurs
However,
C2 restores
C1 discharges
in
to form
of the longer
some of the charge
moved from C 1 by the gate current
required
by individually
substitution
value
resistor
after
of the
testing
the
circuit
is
required
value
as
the assemblies
box in place
with
of the trimmer.
some volt-
is illustrated
because
a resistor
to the
or a fixed
re-
pulse.
The
sistor
as
double-lime-constant
provides
well
as
consistently
good range
sistance
potentiometer,
sistance
of the
trimmer,
circuit
with
good hysteresis
control.
possibly
spreads
The
use
about
out the
trimmer
of a high-retwice
the
" (THEORETICAL)
2n'
GATE TRIGGER
POINT
Fig.7 Charging cycle of the diac network in the circuit

of Fig.6.
Fig.
8 shows
another
the maximum
the difference
double-time
constant
circuit
is added and the potentiometer

directly to the diac.
Although
attainable
conduction
angle is increased,
in power is less than one per cent.
Range Control
Maximum range of light control
lamp
turned
begins
slightly
to light
as
soon
is obtained
as the
from the zero-intensity
when the
potentiometer
is
end of the range.
Fig.9
- Light-control
circuits
incorporating
resistor
across
the potentiometer.
re-
low-intensity
range for finer control.
in which a fixed resistor

is moved over to connect
re-
correction
a trimmer
::'LdLt
LV
LlIt
J.UW-.lIl1l-'tUdllL.t
::'LdLt
seconds,
the current
must rise
whatever
the load will permit
rapid rise in current

ence (RFI) extending
hertz.
Although
television
.L VI
,,{. 1Il1L.IV-
within
this
zero to
period.
This
produces radio frequency

interferup into the range of several mega-
the resulting
and FM radio
short-wave
Wll1lUI
from essentially
noise
does
frequencies,
and AM-radio bands.
not affect
it does
The
level
the
affect
the
of RFI pro-
duced by the triac is well below that produced by most

AC-DC brush-type
electric motors, but because the light
dimmer may be on for long periods
RFI
suppression
network
ably
effective
suppression
of time,
is usually
some type of
added.
network
is
A reason-
obtained,
nues
until
what
more than one half cycle.
the bulb
of the triac
has surge
and may last

Damage
by selection
in excess
for some-
or degradation
of a triac
of the flashover
which
can occur.
A device
cycle
peak current
of 100 amperes
capable
that
currents
of handling
a one-
or more is adequate
for most installations

using up to ISO-watt bulbs.
When
the triac has inadequate
surge capability
for a particular
application,
special
high-speed
fuses
or circuit
break-
ers, external resistors, or other current limiting devices

such as chokes
may be used.
as
LIGHT
CONTROL
CIRCUIT
60 Hz
opens,
can be avoided
capability
Light-Dimmer
120 VAC
2.3~AC J'
fuse
Fig.
12 shows
plete
Circuits
11 shows
a single-time-constant
a double-time-constant
circuits
suitable
circuit;
circuit.
for operation
Fig.
Both are com-
at 120 or 240 volts
ac, 50 or 60 Hz. The chart with each circuit specifies

the values of components
which change with the line
shown in Fig. 10, by connection
of an inductor in series
with the light-control
circuit to limit the rate of current
rise.
The capacitor is connected across the entire net-
work to bypass
not connected
high-frequency
signals
to any external
circuits
so that
voltage.
in each
The resistor
in series with the potentiometer
circuit is used to protect the potentiometer
by
limiting
the
current
low-resistance
when
the
potentiometer
is
at the
end of its range.
they are
through
the pow-
er lines.
Overload
is
Considerations
An important
the transient
lower
first
consideration
load which
resistance
turned
inrush
in the choice of a triac

results
from the initially
of the cold filament
on.
The transient
current
which
can
when the lamp is
load results
destroy
in a surge
the
triac.
or
The
It is important
cuits
dissipates
to remember
that
a triac
in these
cir-
power at the rate of about one watt per
am{lere. Therefore, some means of removing heat must

be provided
to keep
ing-temperature
range.
the device
within
On a small
its
safe
light-eontrol
operatcircuit
10 to 1 and
such as one built into a lamp socket, the lead-in wire

serves
as an effective
heat sink.
Attachment
of the
triac case directly to one of the lead-in wires provides
can be as high as 15 to 1 for high-wattage

lamps.
The
triac chosen
for a particular
lamp, therefore,
should
sufficient
heat dissipation
for operating currents
up to
2 amperes (rms).
On wall-mounted
controls
operating
worst
peak
case
occurs
of the line voltage.
rent to steady-state
have
when the light
a subcycle
Flashover
than
about
sufficient
peak current
on at the
of initial
is usually
capability
of this
peak cur-
to allow
without
re-
degradation
up to 6 amperes,
box serves
the combination
as an effective
of face plate
heat sink.
and wall-
For higher-power
controls,
however, the ordinary face plate and wallbox
do not provide sufficient
heat-sinking
area.
In this
is another
with incandescent
er stress
The ratio
current
surge
peated passage
of the device.
is sw itched
loads,
inrush.
transient
Flashover
an even great-
case, additional
area may be obtained by use of a finned face plate that has a cover plate which stands out
to the arc de-
from the wall so air can circulate
condition
and may impose

refers
associated
veloped between the broken ends of the filament when

the light bulb burns out. Ionization
within the bulb al-
On wall-mounted
controls,
freely
it is also
over the fins.

important
that
lows the arc to flow directly between the internal leadin wires, and current is then limited only by line imped-
the triac be electrically

isolated
from the face .plate,
but at the same time be in good thermal contact with it.
ance.
Because
of the
flashover,
incandescent
Although
large currents
associated
light bulbs have fuses
into the stem to open circuit

the line circuit
breaker.
at the bulb without
On low-wattage
bulbs,
with
built
opening
the arc
sulators
the thermal
is relatively
conductivity
of most electrical
low when compared
low-thermal-resistance,
electrically
triac to face plate can be obtained
with metals,
isolated
bond
if the thickness
ina
of
of
120 VAC
'"\, 2480AC
60 Hz
R2
3300 ohms, y, W
Cl
0.05 f.LF, 100V
0.1 f.LF, 100V
C2
0.05 f.LF, 100V
0.10 f.LF, 100V (60 Hz)

0.12 f.LF, 100V (50 Hz)
100 f.LH
200 f.LH
Yl
D3202U
D3202U
Y2
T2800B
0.1 megohm,
R2
2200 ohms, Y,W
0.2 megohm, lW (60 Hz)

0.25 megohm, lW (50 Hz)
C1C2
0.1 f.LF, 200V
0.1 f.LF,400V
100 f.LH
200 f.LH
Yl
D3202U
D3202U
Y2
T2800B
T2800D
'"\-
y,w
R,
120 VAC
OR
240 V AC
60 Hz
C,
C2
the insulator is minimized, and the area for heat transfer through the insulator is maximized. Suitable insulating materials are fiber-glass tape, ceramic sheet, mica,
and polyimide film. Fig. 13 shows two examples of isolated mounting for triacs: in Fig. 13(a) , a TO-5 packELECTRICAL
TAPE
THERMOSETTING
ONE SIDE
(SCOTCH
BRAND ELECTRICAL
TAPE No 27)
age; in Fig. 13(b), the new plastic package. Electrical

insulating tape is first placed over the inside of the
face plate. The triac is then mounted to the insulated
face plate by use of epoxy-resin cement.
ELECTRICAL
TAPE
THERMOSETTING
ONE SIDE
(SCOTCHBRAND ELECTRICAL
TAPE No. 27)
Trouble
Shooting
Some malfunctions
causes,
as follows:
Light
remains
intensity
which
on full
varied
in light-dimming
Triac
and will not
dim.
Light
can occur
intensity
but fails
can be
Discontinuity
in brightness at about half
intensity.
Flickerir,g
exists
at
Light
out over most of

range;
on full intensity
resistance
with their
in both directions
caused
surge.
Wiring
Anode-cathode
or anode-gate
Triac
Breakover
voltage
reduced
possible
by flashover
shorted.
in one or both
directions.
Diac
Low breakover
Triggering
Capacitor
Capacitance
Potentiometer
Maximum resistance too low.
Triac
IGT too high in one mode.
Diac
Breakover
Triac
Low commutating dv/ dt capability.

stops when the inductor is shorted.
low intensity.
the control
Shorted
are listed
or high current
to reach
zero.
circuits
voltage.
too low.
not symmetrical.
Triac
IGT too high.
Diac
Voltage
breakback
too low.
Wiring
Diac not included
or shorted
Flickering
turns
near low
end of potent i-
out.
ometer.
Same effect
as preceding,
but accompanied
Triac
by arc-
Internal
ing in potentiometer.
to turn on
are rejected
(very unlikely
because
by 100 per cent electrical
test).
Capacitor
Shorted (this condition

but not the triac).
Wiring
Open anode contact (this condition destroys both the

potentiometer
and the triac).
Cathode to gate short
(this
Light fails
at all.
short gate to cathode
such devices
condition
destroys
destroys
the potentiometer,
only the potentiometer).
Triac
Open gate contact (very unlikely due to the 100 per

cent electrical
test by manufacturer).
Diac
Open
Potentiometer
Open
Wiring
Open circuit
cathode.
at potentiometer,
diac,
triac
gate,
or
[lli(]5LJD
Solid State
Division
Thyristors
Application Note
AN-3780
A New Horizontal-Deflection System Using

RCA S3705M and S3706M Silicon Controlled Rectifiers
This Note describes a highly reliable horizontal-deflection system designed for use in the RCA CTC-40
solid-state color television receiver. This system illustrates a new approach in horizontal-circuit
design that
represents a complete departure from the approaches
currently used in commercial television receivers. The
switching action required to generate the scan current
in the horizontal yoke windings and the high-voltage
pulse used to derive the dc operating voltages for the
picture tube is controlled by two silicon controlled rectifiers (SCR's) that are used in conjunction with associated fast-recovery diodes to form bipolar switches.
The RCA-S370SM SCR used to control the trace current and the RCA-S3706M SCR that provides the commutating
action to initiate trace-retrace
switching
exhibit the high voltage- and current-handling
capabilities, together with the the excellent switching characteristics, required for reliable operation in deflectionsystem applications. The switching diodes, RCA-D2601EF
(trace) and D260 I DF (commutating), provide fast recovery times, high reverse-voltage blocking capabilities,
and low turn-on voltage drops. These features and the
fact that, with the exception of one non-critical triggering pulse, all control voltages, timing, and control polarities are supplied by passive elements within the
system (rather than by external drive sources) contribute substantially to the excellent reliability of the
SCR deflection system.
Fig. 1 shows the circuit configuration of the over-all

horizontal-deflection
system. The system operates di-
rectly from a conventional, unregulated dc power supply of + 155 volts, provides full-screen deflection at
angles up to 90 degrees at full beam current (1.5 milliamperes average in the CTC-40 receiver). The current
and voltage waveforms required for horizontal deflection and for generation of the high voltage are derived
essentially from LC resonant circuit>. As a result, fast
and abrupt switching transients, which would impose
strains on the solid-state devices, are avoided.
A regulator stage is included in the SCR horizontaldeflection circuit to maintain the scan and the high
voltage within acceptable limits with variations in the
ac line voltage or picture-tube
beam current. The
system also contains circuits that provide full protection
against the effects of arcs in the picture tube or the highvoltage rectifier and linearity and pincushion correction
circuits. Each individual part of the deflection system is
designed to specifications that are compatible with
achievement of the following system performance:
25-inch, 90-degree color type; neck diameter =

1 YJ. 6 inches
(i.e_, similar
to RCA- Type
25XP22)
U1tor Voltage, Beam Current, and Regulation
26.5 kilovolts at zero beam current or 24.5
kilovolts at 1.5 milliamperes (average) of beam
current for ac line voltages of i20 to 130 volts
rms
HIGH-VOLTAGE
REGULATOR
TYPE 2N4064
F.=-----------d
SATURABLE
REACTOR
LSR
IOOOpF
J;SCRT
ReA
S3705M
Total flyback pulse width = 14 microseconds

at extremes of yoke voltage
24.5 kilovolts at 1 milliampere of beam current

for ac line voltages of 108 to 130 volts rms
22.5 kilovolts at 1.5 milliamperes of beam current for an ac line voltage of 105 volts rms
Trigger Input
10-volt, 5-microsecond pulse (obtained
from horizontal oscillator)
Input Current
420 milliamperes
at zero beam current
670 milJiamperes
current
at 1.5 milliamperes
Pincushion Correction
of beam
DC Input Voltage (Nominal)
OF THE SWITCHING
provided
SCR's AND
DIODES
of beam current
Scan Regulation*
%-inch change for variation
from 105 to 130 volts rms
Top and bottom pincushion correction

for a minimum radius of 150 inches
REQUIREMENTS
155 volts at zero beam current

148 volts at 1.5 milliamperes
directly
in ac line voltage
% ~inch change for beam-current

variation of
0.3 to 1.5 milliamperes at a line voltage of 120
volts rms
Linearity*
Deviation in picture width is equal to or less
than 5 per cent, left to right
Retrace Time
Flyback pulse width = 12.5 microseconds
zero crossing of yoke voltage
at
The SCR horizontal-deflection

circuit requires fast
reverse recovery for both the switching SCR's and the
diodes and fast turn-on for the SCR's. The S3705M and
S3706M SCR's and the 0260 I EF and D260 I DF diodes are
well suited to provide this type of performance.
(Detailed specifications for the SCR's and diodes are given
in the published data on the devices). The exceptional
capabilities of these devices are illustrated by the performance that they provide in the horizontal-deflection
system. Fig. 2 shows the significant current and voltage
waveforms that the SCR's and diodes are subjected to
during operation of the deflection circuit.
The S3706M SCR used in the commutating switch is
required to pass a pulse of current that has a peak
amplitude of 13 amperes and an initial rate of rise of
20 amperes per microsecond. At the operating frequency of the horizontal-deflection
circuit, achievement
of this performance requires low turn-on dissipation in
An SCR is turned off by a reversal of its anode-tocathode voltage; before the forward voltage can be reapplied, a short time is required to allow the device to
->I
I
I
i'-4.5,.,
toff
COMMUTATING(DIODE
I
I
SWITCH VOLTAGE
AND seRl
I
COMMUTATING-$WITCH
seR CURRENT
COMMUTATING-
__
'
SWITC~
I
I
OIOOE CURRENT
obc-=-~~-----~~---I
I
CQMMUTATING-$W1TCH
U\
:
vI,.,
17S
SLOPE
seR
GATE
SIGNAL
i
TRACE -SWITCH
VOLTAG~
(DIODE AND SeR)
'UILS pt:r mlcrosecona.

NegatIve gate bias is used with
both SCR's to reduce turn-off time. The gate sensitivity of the commutating-switch
SCR is high enough so
that this device can be triggered directly from the
horizontal oscillator.
The exceptional switching performance provided by
the S370SM and S3706M seR's is made possible by use of
all-diffused pellet structures that employ a centrally
located gate having a large gate-cathode periphery to
ensure low initial forward voltage drops and, therefore,
low switching losses. The lifetime of minority charge carriers is substantially reduced to provide the fast turnoff-time capability. The "shorted-emitter"
construction
technique, in which a low-resistance path is provided
around the gate-to-cathode
junction, is used to obtain
the high dv /dt capability required for the SCR's to
withstand the high rates of reapplied forward voltage
encountered in the horizontal-deflection
system.
The D260 I EF and D260 I DF diodes used in the trace and
commutating
switches, respectively, are designed to
provide fast reverse recovery (by means of minoritycarrier lifetime control), to reduce rf interference in the
circuit, and to decrease diode recovery losses. The slope
and magnitude of the reverse-recovery
current in the
diodes have been optimized to ensure minimum reverserecovery dissipation and to prevent rf interference because of overly abrupt recovery. The fast recovery characteristics have been achieved while maintaining a low
turn-on voltage drop and a high reverse-voltage blocking capability.
I
0--
I
I
I
I
The essential components in the SCR horizontaldeflection system required to develop the scan current
in the yoke windings are shown in Fig. 3. Essentially
0-1- -HIGH-VOLTAGE
TRANSFORMER
r----,
[:
II[ :
Fig. 2 - Voltage and current wavelorms applied to the SCR's

and diodes used to control the switching actions in the
SCR horizontal-deflection
system.
regain its forward-blocking

capability. Under worstcase conditions, the available turn-off time for the
commutating switch requires the use of an SCR that
can be completely turned off in 4.5 microseconds. The
SCR must then be able to block a reapplied forward
voltage of 100 volts applied at a rate of 400 volts per
microsecond. The turn-off requirement for the traceswitch SCR, under worst-case circuit conditions, is 2.5
E:
[:
__ J
Fig. 3 -
Basic circuit lor generation of the deflection ..current

waveform ill the horiz.ontal yoke winding.
the trace-switch diode DT and the trace-switch controlled rectifier SCRT provide the switching action
which controls the current in the horizontal yoke windings Ly during the picture-tube
beam-trace interval.
The commutating-switch
diode Dc and the commutating-switch controlled rectifier SCRc initiate retrace and
control the yoke current during the retrace interval.
Inductor Ln and capacitors, Cn, CA, and Cy provide the
necessary energy storage and timing cycles. Inductor
Lec supplies a charge path for capacitor Cn from the dc
supply voltage (B +) so that the system can be recharged from the receiver power supply. The secondary
of inductor Lee, provides the gate trigger voltage for
the trace-switch SCR. Capacitor Cn establishes the
optimum retrace time by virtue of its resonant action
with inductor Ln.
The complete horizontal-deflection
cycle may best be
described as a sequence of discrete intervals, each terminated by a change in the conduction state of a
switching device. In the following discussion, the action
of the auxiliary capacitor CA and the flyback highvoltage transformer are initially neglected to simplify
the explanation.
Fig. 4 shows the circuit elements involved and the

voltage and current relationships during the first half of
the trace deflection-current

interval, the period from
To to T 2' At time To, the magnetic field has been established about the horizontal yoke windings Ly by the
circuit action during the retrace period of the preceding
cycle (explained in the subsequent discussion of retrace
intervals).
This magnetic field generates a decaying
yoke current iy that decreases to zero when the energy
in the yoke winding is depleted (at time T2). This
current charges capacitor C,. to a positive voltage V cy
through the trace-switch diode DT
During the first half of the trace interval (just prior
to time T 2) the trace controlled rectifier SCRT is
made ready to conduct by application of an appropriate
gate voltage pulse VOATE' SCRT does not conduct, however, until a forward bias is also applied between its
anode and cathode. This voltage is applied during the
second half of the trace interval.
At time T2, current is no longer maintained by

the yoke inductance,
and capacitor
C,. begins to
discharge into this inductance. The direction of the
current in the circuit is then reversed, and the traceswitch diode DT becomes reverse-biased.
The traceswitch controlled rectifier SCRT, however, is then forward-biased by the voltage V Cy across the capacitor,
and the capacitor discharges into the yoke inductance
through SCRT, as indicated in Fig. 5. The capacitor Cy
o--~------
Fig. 4 - Effective configuration of the deflection circuit during

the first half of the trace interval, time To to T2. and
operating voltage and current waveforms for the
complete frace-retrace cycle.
Fig. 5 - Effective configuration of the deflection circuit during

the second half of the trace interval. time T2 to T 5.
and the complete scan-current waveform.
is sufficiently large so that the voltage V Cy remains

essentially constant during the entire trace and retrace
cycle. This constant voltage results in a linear rise in

current through the yoke inductance Ly over the entire
scan interval from Toto T 5'
The circuit action to initiate retrace starts before the

trace interval is completed. Fig. 6 shows the circuit
elements and the voltage and current waveforms required for this action. At time T 3, prior to the end of
cess current in the commutating pulse is tben bypassed

around the yoke winding by the shunting action of
diode DT. During the time from T 4 to T 5, the traceswitch controlled rectifier SCRT is reverse-biased by the
amount of the voltage drop across diode DT The traceswitch controlled rectifier, therefore, is turned off during this interval and is allowed to recover its ability to
block the forward voltage that is subsequently applied.
At time T5, the commutating

pulse is no longer
greater than the yoke current, as shown in Fig. 7;
trace-switch diode DT then ceases to conduct. The yoke
inductance maintains the yoke current but, with SCRT
in the OFF state, this current now flows in the commutating loop formed by LR, CR, and SCR:,. Time T 5 is
the beginning of retrace.
As the current in the yoke windings decreases to
zero, the energy supplied by this current charges capacitor CR with an opposite-polarity
voltage in a
resonant oscillation. At time T6, the yoke current is
zero, and capacitor CR is charged to its maximum negative voltage value. This action completes the first half
of retrace.
~
0-
-I~-I
VGATE
o~---
Fig. 6;- Effective configuration of the deflection circuit and

significant vol/age and current waveforms for initiation
of retrace, time T3 to Tj.
the trace period, the commutating-switch

controlled
rectifier SCRc is turned on by application of a pulse
from the horizontal oscillator to its gate. Capacitor CR
is then allowed to discharge through SCR:, and inductor LR. The current in this loop, referred to as the
commutating circuit, builds up in the form of a halfsine-wave pulse. At time T4, when the magnitude of
this current pulse exceeds the yoke current, the traceswitch diode DT again becomes forward-biased. The ex-
I
Y
0-
I
~-
Fig. 7 - Effective configuration of the deflection circuit and

operating voltage and current waveforms during the
first half of retrace, time T 5 to T 6.
At time T G, the energy in the yoke inductance is

depleted, and the stored energy on the retrace capacitor Cn is then returned to the yoke inductance. This
action reverses the direction of current flow in the yoke.
During the reversal of yoke current, the commutatingswitch diode Dc provides the return path for the loop
current, as indicated in Fig. 8. The com mutating-
Fig.
9-
Effective
configuration
oj/he
the slt'itchover from retrace
deflection
10
circuit
accomplished in a relatively short period, Toto

shown in Fig. 8.
Fig.
8 - Effective configuration
of the deflection
circuit and
operating voltage and curren! waveforms during the
second half of retrace, time Tn to To
switch controlled rectifier SCRe is reverse-biased by the

amount of the voltage drop across diode Dc. The
commutating-switch
controlled rectifier, therefore, turns
off and recovers its voltage-blocking capability. As the
yoke current builds up in the negative direction, the
voltage on the retrace capacitor Cn is decreased. At
time To, the voltage across capacitor Cn no longer
provides a driving voltage for the yoke current to flow
in the loop formed by Ln, Cn, and Ly The yoke current finds an easier path up through trace-switch diode
DT, as shown in Fig. 9. This action represents the
beginning of the trace period for the yoke current
(i.e., the start of a new cycle of operation),
time To.
Once the negative yoke current is decoupled from
the commutating loop by the trace-switch diode, the
current in the commutating circuit decays to zero. The
stored energy in the inductor Ln charges capacitor Cn
to an initial value of positive voltage. Because the resonant frequency of Ln and Cn is high, this transfer is
during
trace, time To.
T 1, as
The actions required to restore energy to the commutating circuit and to reset the trace SCR are also
very important considerations in the operation of the
basic deflection circuit. Both actions involve the inductor Lee.
During the retrace period, inductor Lee is connected
between the dc supply voltage (B +) and ground by
the conduction of either the commutating-switch
SCR
or diode (SCRe or Dc),
as indicated in Fig. 10.
When the diode and the SCR cease to conduct, however, the path from Lee to ground is opened. The
energy stored in inductor Lee during the retrace interval
then charges capacitor Cn through the B + supply, as
shown in Fig. 1 I. This charging process continues
through the trace period until retrace is again initiated.
The resultant charge on capacitor Cn is used to resupply energy to the yoke circuit during the retrace
interval.
The voltage developed across inductor Lee during
the charging of capacitor Cn is used to forward-bias the
gate electrode of the trace SCR properly so that this
Fig. 10 - Circuit elements and current path used to supply

energy to the charging choke Lee during period from the
start of retrace switching action to the end of the first
half of the retrace interval, time T:~ to T1.
device is made ready to conduct. This voltage is inductively coupled from 4Jc and applied to the gate of
SCRr through to a wave-shaping network formed by
inductor 4, capacitor CG, and resistor RG The resulting voltage signal applied to the gate of SCRT has the
desired shape and amplitude so that SCRT conducts
when a forward bias is applied from anode to cathode,
approximately midway through the trace interval.
Fig.
11 resetting
Effective
configuration
(application
of forward
of the deflection
bias
/0)
circuit
the trace
for
SCR
and recharging rhe retrace capacitor CR, during time

interval from T 1 10 T;~.
Fig. 12 - Circuit configuration showing the addition of
auxiliary capacitor CA and current and voltage
waveforms showing the eOect of this capacitor.
In the preceding discussions of the operation of the

deflection circuit, the effect of capacitor CA was neglected. Inclusion of this capacitor affects some of the
circuit waveforms, as shown in Fig. 12, aids in the
turn-off of the trace SCR, reduces the retrace time,
and provides additional energy-storage
capability for
the circuit.
During most of the trace interval ( from To to T.),
including the interval (T 3 to T 4) during which the
commutating pulse occurs, the trace switch is closed,
and capacitor CA is in parallel with the retrace capacitor CR. From the start of retrace at time T 4 to the
beginning of the next trace interval at time To, the trace
switch is open. For this condition, capacitor CA is in
series with the yoke L, and the retrace capacitor CR so
that the capacitance in the retrace circuit is effectively
decreased. As a result, the resonant frequency of the
retrace is increased, and the retrace time is reduced.
The auxiliary capacitor CA is also in parallel with the
retrace inductor LR. The waveshapes in the deflection
circuit are also affected by the resultant higher-frequency resonant discharge around this loop. The voltage and current waveforms shown in Fig. 12 illustrate
the effects of the capacitor CA'
The SCR horizontal-deflection

system in the RCA
CTC-40 receiver generates the high voltage for the
picture tube in essentially the same manner as has been
used for many years in other commercial television receivers, i.e., by transformation of the horizontal-deflection retrace (f1yback) pulse to a high voltage with a
voltage step-up transformer and subsequent rectification
of this stepped-up voltage. The RCA-3CZ3 electron
tube is used as the high-voltage rectifier in the RCA
CTC-40 television receiver.
Fig. 13 shows a schematic of the over-all highvoltage circuit, and Fig. 14 shows a simplified schematic of this circuit together with the significant voltage
and current waveforms. The high-voltage transformer
is connected across the yoke and retrace capacitor. The
inductance and capacitance of this transformer are such
that it presents a load tuned to about the third harmonic of the retrace resonant frequency. The presence
of this load adds harmonic components to the waveforms previously described.
FOCUS AND
SCREEN
SUPPLY
HORIZ.
UTILITY
ICy
:~LCLAMP
lIN.~~
ADJ.
The high voltage is regulated by controlling the

amount of energy made available to the horizontal-
f\...
'(Ly+CyJ
o--~--~-
Fig. 14 - Simplified schematic and significant voltage and

current waveforms for the high-voltage circuit.
output trace circuit. As stated previously, the trace

circuit is supplied by energy which is stored primarily
on the com mutating capacitor CR' This capacitor is
charged during the trace interval through inductance
Lee.
Control of the high-voltage energy on the commutating capacitor is made possible by the design of inductor Lee so that it approaches resonance with capacitor Cn; the degree of this resonance can be varied
by the high-voltage regulator circuit.
Fig. 15 illustrates the effect of this resonant action
on the charge on the commutating capacitor. The waveshape that results from the resonant action determines
the amount of charge that will be on the capacitor when
its energy is released into the trace circuit.
The resonance of the inductor Ler and the commutating capacitor Cn is varied by use of a saturable
reactor Lsn to control the inductance across L('r. The
saturable-reactor
load winding is placed in parallel with
Lee. Changes in the current through the reactor control
windings varies the total inductance of the input circuit.
The current in the reactor load winding is controlled
by the pulse regulator circuit.
The control current for the reactor control winding is
determined by the conduction of the high-voltage regulator transistor Q". The collector current of this transistor is in turn controlled by the voltage across the
yoke-return capacitor C. This voltage, which is directly
proportional
to high voltage and which tracks any
changes in the high voltage, is sampled by the highvoltage adjustment control and compared to a reference voltage determined by a Zener diode. The resulting difference voltage, which is indicative of changes in
the high voltage, controls the conduction of the regulator transistor.
As the high-voltage load (beam current) decreases,
the high voltage tends to increase. The voltage across
the yoke-return capacitor then tends to increase. This
action results in an instantaneously higher current pulse
through the base-emitter junction of the regulator transistor. The reactor control current, therefore, tends to
increase proportionally, so that the total inductance of
the input circuit is decreased. The resulting change in
resonance of Lee, L,n, and Cn reduces the charge on
CR and the energy made available to the trace circuit.
In this way, the high voltage is stabilized. The reverse
action, of course, occurs if the high voltage tends to
decrease.
Diode DIm acts as an energy-recovery diode which
improves the efficiency of the control circuit. The regulator transistor actually conducts only for a very short
time, and the majority of the control current is supplied
by diode conduction. This high-voltage regulating system also maintains the high voltage within acceptable
limits for variations in the ac line voltage over the
range from 105 to 130 volts.
r--I
-J:iL'51
=1=1
L __
-J
Ly
HV.II
TRANS.
-~
AT HIGH L~NE VOLTAGE:;\.
AND LOW BEA'' Cl*tR~....
---
.CR
--
AT LOW LINE VOlTAGE

AND HIGH BEAM CURRENT
Fig. 15 -
These components dampen the high ringing current that

may occur as a result of high-voltage arcing. This current is mainly dissipated in the resistor Ro; The principal purpose of the shunting diode is to allow the
normal initial flyback current to flow unimpeded so that
the high voltage is not decreased by the dampening
action of the resistor.
The other protection circuit consists of a diode
(DcL), a capacitor (CCL) connected between the diode
cathode and ground, and a resistor ReL from the diode
cathode to the B + supply v.oltage. The anode of the
diode is connected to the ungrounded end of the primary of the high-voltage transformer. The diode conducts during the peak of the retrace voltage pulse that
appears across the primary of the high-voltage transformer and charges the capacitor to this voltage. The
resistor provides a high-resistance
discharge path for
the capacitor and allows the voltage across the capacitor to be reduced just enough to keep the diode reverse-biased during the retrace interval. When a sharp
voltage pulse is produced because of high-voltage arcing, the diode conducts so that the trace switch is
clamped to the voltage across the capacitor. The arc
pulse voltage, therefore, is not allowed to exceed the
breakdown voltage of the trace-switch components.
High-voltage regulator and operating

and current waveforms.
voltage
Two circuits are included in the SCR deflection

system to protect the trace-switch SCR and diode from
high voltages and currents that may result because of
arcing from the high-voltage rectifier or the picture
tube. These circuits are shown in Fig. 16.
One circuit includes the parallel combination of a
diode (Do) and a 4.7-ohm resistor (Ro) connected in
series with the primary of the high-voltage transformer.
TRANS.
H'V~
II
H.V.
Two means are provided in the SCR horizontaldeflection system to correct for nonlinearities
in the
horizontal scanning current that may result because of
voltage drops across the inherent resistance in the trace
circuit. Voltage drops across the resistance of the traceswitch SCR and diode are held to a minimum by
operation of the trace diode at a more negative voltage
than the trace SCR. This condition is achieved by connection of the trace diode one turn higher (more
negative) on the high-voltage transformer
than the
SCR.
Fig. 17 illustrates another technique used to correct
for nonlinearity in the scanning current. This technique
uses a damped series resonant circuit (LLIN' CLIN, and

RLI,,) , connected between a winding on the highvoltage transformer
and the ungrounded side of the
yoke-return capacitor C" to produce a damped sine
wave of current that effectively adds to and subtracts
from the charge on the yoke-return capacitor Cy The
resulting alteration in yoke current corrects for any
trace-current nonlinearities.
ADVANTAGES
DEFLECTION
OF THE SCR HORIZONTALSYSTEM
It is apparent from the preceding discussions that

the SCR horizontal-deflection system offers a number of
distinct advantages over the conventional types of systems currently used in commercial television receivers.
The following list outlines some of the more significant
circuit features of the SCR deflection system and points
out the advantage derived from each of them:
voltage and current waveforms, and timing cycles are determined by passive components
in response to the action of two SCR-diode
switches. The stability of the system, therefore, is
determined primarily by the passive components.
When the passive components are properly adjusted, the system exhibits highly predictable performance characteristics and exceptional operational dependability.
2.
The only input drive signal required for the SCR

deflection system is a low-power pulse which has
no stringent accuracy specification in relation to
either amplitude or time duration. The deflection
system, therefore, can be driven directly from a
pulse developed by the horizontal oscillator.
3. This deflection system is unique in that, although

it operates from a conventional B + supply of
+ 155 volts, the flyback pulse is less than 500
volts. This level of voltage stress is substantially
less than that in conventional line-operated systems, and this factor contributes to improved
reliability of the switching devices.
4.
Regulation in the SCR deflection systelil is accomplished by control of the energy stored by a
reactive element. This technique avoids the use
of resistive-load regulating elements required by
many other types of systems and, therefore,
makes possible higher over-all system efficiency
and reduces input-power requirements.
5.
All switching occurs at the zero current level

through the reverse recovery of high-voltage p-n
junctions in the deflection diodes. The diode junctions are not limited in volt-ampere switching
capabilities for either normal or abnormal conditions in the circuit.
I. Critical
oornLJD
Thyristors
Application Note
Solid State
Division
AN-3822
Thermal Considerations
in Mounting
of
RCA Thyristors
Consideration
of thermal
problems
involved
in the
mounting of thyristors
is synonymous
of the best heat sink for a particular
with consideration
application.
Most
practical
compact
heat
sinks
used
in modern,
equipment
are the result of experiments

with heat transfer through
convection,
radiation,
and conduction in a given application.
Although
provide
exact
plication,
there
are no set design
heat-sink
there
specifications
surface
large
area
of the
as possible
heat
transfer.
sink
should
The area of the surface
environment
in which the thyristor
heat-sink
surface
near unity
ation.
A value
if the heat-sink
heat-sink
often
these
should
systems,
become
power-control
thyristors.
ristors
packages
be soldered
are
size
restrictive
These
because
shown
followed
and cost
in
compact,
power-switching
restrictions
the JEDEC
in Figs.l
directly
and the
an emissivity
by radi-
approaching
unity can be obtained
surface is painted flat black.
the
and
be as
is to be placed.
have
of such
using
in RCA thy-
and 2 are tin-plated

sink.
systems
mass-produced
applications
TO-5 and "modified
to a heat
material
gradients
in conventional
are overcome
MODIFIED
is dictated
requirements
for optimum heat transfer
rules
2-L EAD
possible
3. The thermal conductivity

of the heat-sink
should be such that excessive
thermal
'are not established
across the heat sink.
Although
3-L E AD
for the job.
the greatest
case-temperature
value
ap-
reduce
MODIFIED
by thyristor
2. The
that
design
heat
to provide
rules
that
for a given
are a number of simple
the time required to evolve the best

These simple rules are as follows:
1. The
formulas
The use
TO-5"
and can
of mass-
produced
prepunched
soldering
techniques
eliminates
associated
with
sinks
use
parts,
heat
of a variety
direct
of simple,
soldering,
by making
efficient,
possible
readily
heat-sink
configurations
that can be easily
into the mechanical
design of equipment.
Power Dissipotion
ond Heot-Sink
The curves
in Fig.3
shown
the power-dissipation
letins describing
of Fig.3
curves
the various
are conservative
Fig.4
represent
Areo
4, it is assumed
for use with
shown in the technical

RCA thyristors.
bul-
The curves
and can be used
the power-dissipation
thyristor.
the
fabricated
incorporated
are designed
thyristors
having thermal-resistance
tion-to-case,
of 50 C/W or less.
a typical
and batch-
many of the difficulties
directly
for
ratings (Br), juncThe curves shown in

characteristics
of
As an example of the use ofFigs.3and

that
an appropriate
heat
sink
must
be
366
3~'" O,A
-l
335
315 OIA
I
035 .
OIS
.~ns
1.-
6~"
OIA
...- CASE TEMPERATURE

QE'ER[NC[
lONE
/"" GAT(
4S
42
0
,.,
0~5
028
OuTSIDE
CORNER
'"
:*'
'~
RADII
045
029
007
MAX.
034
02.
~~:ll
).
r~~~
MINo]
.045
.029
MAX.
MIN
01'
.335
MAX.
.315
01'
.100
MIN.
.260 MAX.
240"".
L
..
ISEATING
.009 TO
.125
OETL~~i:SI~~~T-
PLANE
1.5
~N.
ZONE OPTIONAL
2 LEADS
-_.019
MAX
.016
MIN.
01'
Fig.2
- Details
and reference
of thyristor
point
packages
showing
for case-temperature
dimensions
measurement.
found for a thyristor

that is to conduct a current of 2
amperes.
operate at an air temperature
of 370C, and be
The curves of Fig.3

having
junction-te-case
soldered
more than SO C/IV.
to the heat
the
sink
maximum
at the base
From
Fig.4,
power
ristor
is found to be 3 watts.
Fig.3
imum allowable
thermal resistance
this level of power dissipation
is
square,
dull,
aluminum
1/ 4 inches
1/ 16-inch-thick
heat
sink
of the package.
dissipation
shows
that the max-
of the heat sink at

150 C/IV, and that a
copper
or 1/8-inch-thick
with an area of at least
is required.
in the thy-
1-3/4
by 1-
can also be used with thyristors

thermal-resistance
ratings
of
However,
the difference
between
the
higher thermal-resistance
value of the thyristor
and the
value of SO C/IV upon which the curves are based must
be subtracted
from the thermal-resistance
values
in Fig.3.
For example,
if it is assumed
tions
the
those
are
same
as
stated
shown
that the condi-
previously
except
that the thermal resistance,

junction-to-case,
of the device is 130 C/W, the difference
in thermal-resistance
is 80 C/W.
values
by-3-3/8-inch
The
closest
to 80 C/W in Fig.3
tance
heat
sink
value
of thermal
is 70 C/W; therefore,
resis-
a 3-3/8-
is required.
Commercial
heat sinks are available
for the thyristor packages
described;
however, because
the thyristor
package is usually attached
to the heat sink at the cap.
'0
the
resistance
additional
package
thermal
resistance
from the base
to the cap must be considered.
~
1t
~
is
this
can be as high as gO C/W, it can be neglected
if it is only a small percentage
of the
Although
of the over-all
allowable
thermal
resistance.
It should
tor thermal-resistance
measurements
or
be noted that most thyris-
ratings
taken
at the
on temperature
of the
package.
case-temperature
~
::
"s:
temperature
"'c
tems with thermal-resistance

values less than 500 C/W.
For systems
with thermal-resistance
values greater than
500C/W, smaller wire (such as AWG No. 36) is preferred.
outlines
erature
C'
a
w
between
package
AMBIENT
AIR TEMPERATURE
58
104
AIR
AMBIENT
(TFAI-
140
TEMPERATURE
sink
heat
the heat
base.
used
when
temp-
with wire leads
be :employed
for sys-
on Heat Sinks
For most efficient

exist
be
A low-mass
equipped
AWG No. 26 should
Thyristors
on the dimen-
should
are made.
or thermocouple
than
Mounting
in Fig.2
measurements
probe
no larger
shown
point specified
The
'g
2
sional
reference
are based
base
sinks,
sink
intimate
contact
should
and at least
one-half
of the
The package
mechanically,
with
can be mounted
glue
or epoxy
on the heat
adhesive,
or by
(TFA)-
soldering.
176
of
grease
If mechanical
should
be used
sink to eliminate
CURRENT WAVEFORM:
SINUSOIDAL
LOAD:
RESISTIVE
OR INDUCTIVE
CONDUCTION
ANGLE:
1800
mounting
between
surface
is employed,
the device
voids, prevent
up due to oxidation,
and help
interface.
glue
or epoxy
a significant
amount
Although
good
bonding,
exist
at the interface.
tance,
such
an adhesive
as Hysol*
field* Delta
be used.
Bond
Soldering
able
material
Epoxy
No.
heat
Material
may
interface
resis-
resistance,
No. 6C or Wakeequivalent,
to the heat
it is most efficient.
the
provides
of resistance
this
152, or their
build-
across
adhesive
with low thermal
Patch
of the thyristor
because
and the heat
insulation
conduct
To minimize
silicone
sink
should
is prefer-
Not only is the bond
permanent,
but interface
resistance
is easily kept below
10 C/W under normal soldering
conditions.
Oven or hotplate batch-soldering
techniques
are recommended
because
of their
low cost.
The
use
of a self-jigging
ar-
rangement of the thyristor and the heat sink and a 60-40

solder preform is recommended.
If each unit is soldered
individually
with a flame
heat
should
solder
source
on the
unit.
be
or electric
held
Heat
soldering
on the
should
heat
sink
be applied
iron,
the
and
the
only
long
enough to permit solder to flow freely.

Because
RCA
thyristors
are tin-plated.
maximum solder
wetting
is
easily obtainable
without thyristor overheating.
4
AVERAGE
6
FORWARD
AMPERES
10
CURRENT
(IFAV)-
12
* Products
of Hysol
Wakefield
respectively.
Corporation,
Enginli'ering,
Inc.,
Olean,
Wakefield,
New York and

Massachusetts,
The
special
high-conductivity
leads
on the
two-lead
TO-5 package
permit operation
of the thyristor
rent levels
that would ':>e considered
excessive
ordinary
TO-5
into almost
package.
The
special
any configuration
leads
at the glass
should
brittle
edge
which
curvature
be avoided.
at this
point,
produces
in a bend
an
The leads
but the
require-
to take
repeated
repeated
bending
are not espe-
glass
excessively
made
can be bent
to fit any mounting
ment; however,
they are not intended
bending and unbending.
In particular,
cially
at curfor an
has
small
at the glass.
a sharp
radius
Repeated
of
bend-
ing with a small radius of curvature

at a fixed point
cause fatigue and breakage
in almost any material.
this
reason,
right-angle
0.U20
inch
from the
sharp
bends
bends
should
glass.
and maintain
This
be made
practice
sufficient
between lead connections

and header.
A safe
bp assured
if the lead is gripped with pliers
the
glass
seal
the fingers,
and then
as shown
bent
the
in Fig.5.
requisite
at least
will
electrical
will
For
avoid
the chassis
In such
sink,
to be efficiently
sis or housing.
er) which
the
Figs.6
terial
such
fiberglass
and in the correct place the first

no need for repeated
bending.
time,
so that
shape
there
is
a larger
than
area
area
could
in contact
to transfer
as heat
can be varied
applications.
changed,
values
designs that can be used

in Fig.6.
The case-to-air
for each
with
of the easily
approximate
in the illustrations
used,
shown.
for the
added
to the
dimen-
area
or diameter
can be in-
as long as the heat-transfer
exact
thermal
type of insulation
fastened
to the
than
polyimide
used,
heat
construction
less
yields
t!lat
provides
than that
insulation.
plating
as copper,
for aluminum
SCR's
type
heat
the thyristor
or epoxy.
resistance
with
epoxy.
a thermal
about
Alumina
resistance
obtained
with thermoThe heat spreader
thermal
or aluminum.
is commercially
heat
spreader
S2620D,
con-
Solder-
available.
to this heat spreader

S2620B,
any
solder
with suitable
brass,
of copper
soldered
with
a thermal
obtained
be made of any material
of
area, type of metal
and whether
spreader
insulation
such
resistance
on the heat-transfer
is shown
are available
and S2620M.
are soldered
an additional
thyristor
shown
or equipment
thysink;
resistance
of
thermal-resistance
being
to obtain
tion-to-air
thermal resistance
the designs
shown, electrical
to the heat
thermal
sinks
The
to the thermal-resistance
The junction-to-case
values
with ReA
thermal-
fabricated
dimensions.
must be added
particular
from the chassis
spreader
Configurations
Typical heat-sink
thyristors
are shown
value
as heat spread-
Heat
The
from RCA as type numbers
is
when used
depends
A self-jigging
to 20e/W
the
spreader
in Fig.7.
epoxy
al-
through
sirable.
able
10e/W
to chassis
sinks.
For example,
or shape
ductivity,
if
The
with the electrical

insulation
is suffiof 0.2 square inch or more is usually de-
can
ristors
alone.
insulation
over a wide range to suit particular
about 1 to 20 e/w less

setting
fiberglass-tape
value
case
has
out over
area in contact
cient.
An area
or
"long
itself
the heat
electrical
from bracket
resistance
10 e/w
resistance
film or tape,
bracket
thyristor
in
of ma
with relatively
low thermal resistance.
Typsinks, such as those shown in Fig.6, provide a
Soldered
is given,
the
from,
are shown
polyimide
with the
by
method,
spread-
insulated
and spreads
ers than when used
is
Heat.Sink
generat-
to the chas-
may consist
The metal
much lower thermal
used,
Typical
heat
spreaders
ceramic,
sink.
insulat-
can be achieved
insulation
or epoxy.
resistance,
larger
of heat
as alumina
tape,
insulation
ical heat
to the same
transfer
Electrical
a low thermal
creased,
are bent
permit
transferred
to, but electrically
Examples
and 7.
ture
all leads
heat
is attached
chassis.
sions
that
but must still
This
as the heat
use of the heat-spreader

mounting method. In this
the thyristor
is attached
to a metal bracket (heat
ber of devices
are to be bent into a particular
configuration, it may be advantageous
to use a lead-bending
fixto assure
housing
must be electrically
ed by the device
bend can
close to
with
the thyristor
ed from the heat
lows heat
of a num-
or equipment
cases,
isolation
amount
When the leads
use
used
should
the over-all
of each configuration.
insulation
of the heat
housing
be
Bibliography
juncIn
sink
may be required.
J. Neilson
Rectifiers,"
Frank
Chart,"
D.
and N. Smith,
"Thermal
RCA Publication
Gross,
Electronics
Impedance
of Silicon
No. ST-2055A.
"Semiconductor
World, January,
Heat-Sink
Design
1965.
A. D. Marquis,
"How 'Hot' Are You On Thermal
ings?,"
Electronic Design, November 8, 1967.
Rat-
e,
~
~
~
~II
~-:J
~
II
1\
II"
11
II
1116'
~./'~
II
,,.'". -fJ~I
(CASE-TO-A1R'
1-112"
~~
1-'/2'~
~:J
1_1/2"~1-'/2"
e,
r==
(CASE-TO-AIR)30C/W
A~"'--"'~~
L_.,i~"~:--~~
11
1/4"
::::::-..::::::-..:::::::::-
l02"~
5/8"
~f-1/2,,-r
8,
-::::::::..,.
--1--1/2~
(CASE - TO- AIR)
39.5~
~
b">
~~l.-J-
C:~~..---::;;:; 3/4"J
5/8"~
8,
(CASE-TO-AIR)
4~
~~
NOTES:
1. Products
of Minnesota
MInmg & Mfg. Co.,
2. Solder preforma are available

aa Part No.KSFD-375005.
St. Paul,
Minnesota.
from RCA aa Part No.NRI84A
and from the Keater
3. This heat spreader is available

from ReA as Part No.NR 1668
Denvil.le, N.J. 07834 as Part No.14-110.
Solder Co., Newark,
and from the General
Stamping
Co.,
t'I.J. 07105
Inc.
OO(]3LJi]
Thyristors
Application Note
AN-3886
Solid State
Division
AC Voltage Regulators
Using Thyristors
This Note describes a basic ac-voltage regulating

technique using thyristors that prevents ac rms or de
voltage from fluctuating more than 3 per cent in spite
of wide variations in input line voltage.
Load voltage
can also be held within 3 per cent of a desired value
des pite variations in load impedance through the use of
a voltage-feedback
technique.
The voltage regulator
described can be used in photocopying machines, light
dimmers, de power supplies, and motor controllers (to
maintain fixed speed under fixed load conditions).
Circuit Opera:ion
The schematic diagram of the ac regulator is shown

in Fig.l.
For simplicity, only a half-wave SCR configuration is shown; however, the explanation of circuit
operation is easily extended to include a full-wave regulator that uses a triac.
The trigger device Ql used in Fig.l, a diac such
as the RCA-D3202U, is an all-diffused three-layer trigger
diode. This diac exhibits a high-impedance, low-Ieakagecurrent characteristic
until the applied voltage reaches
ELINE.
the breakover voltage VBO, approximately 35 volts.

Above this voltage, the device exhibits a negative res istance so that voltage decreases as current increases.
Capacitor C1 in Fig.l is charged from a constantvoltage source established
by zener diode Zl'
The
capacitor is charged, therefore, at an exponential rate
regardless of line-voltage fluctuations.
A trigger pulse
is delivered to the 2N3228 SCR, Q2, when the voltage
across capacitor Cl is equal to the trigger voltage of
diac Ql plus the instantaneous voltage drop developed
across R4 during the positive half-eycle of line voltage.
When Ql is turned on, Q2 is turned on for the remainder
of the positive cycle of source voltage. Control of the
conduction angle of the SCR regulates rms voltage to
the load.
Regulation is achieved by the following means:
When line voltage increases,
the voltage across ~
increases, but the charging rate of Cl remains the saTile;
as a res ult, the voltage across Cl must attain a larger
value than required without line-voltage increase before
diac Ql can be triggered.
The net effect is that the
pulse that triggers Q2 is delayed and the rms voltage
to the load is reduced.
In a similar manner, as line
voltage is reduced, Q2 turns on earlier in the cycle and
increases the effective voltage across the load.
Fig.2 shows the voltage waveforms exhibited by the
ac regulator at both high and low line voltage.
The
charging voltage for capacitor Cl, El' is equal to the
zener voltage and remains constant up to the instant
that the SCR is turned on. The capacitor voltage, VCl.
increases exponentially because the charging voltage
El is constant. The voltage across resistor R4 conforms
HEATER
e I
567
IME-MILLISECONDS
I.--
I
I
CONDUCTION TIME
(LOW LINE VOLTAGE)
waveforms
The circuit in Fig.3 is an open-loop regulator that

a high degree of safety; i.e., an open- or shortcircuited component does not result in an excessive
i (~~:~~:O~i~~Eiifeatures
ONE HALF-CYCLE
OF AC LINE
Fig.2 - Yoltage
in Fig. 7.
----I
REGULATION
Fig.3 shows a basic regulating technique for applications in which it is desired to maintain constant voltage across a load such as a receiving-tube heater, the
filament of an incandescent lamp, or possibly a space
heater.
It should be noted that this configuration is
actually a half-wave regulator. However, the circuit of
Fig.3 differs from the circuit of Fig.l, in which one
half-eycle is blocked from the load and the other halfcycle is phase-controlled
to provide regulation.
In
Fig.3, essentially full voltage is applied to the load
for one half-cycle by means of D4; the other half-eycle
is phase-eontrolled
by the SCR to provide regulation.
exhibited
I
I
by the ac regulator
to the sinusoidal variations of the 6o-Hz line voltage.

At any given phase angle, the voltage across R4 increases
if line voltage increases and decreases if line voltage
decreases.
The diac and SCR both trigger when the capacitor
voltage, VC1' equals the breakdown voltage of the diac
plu~ the instantaneous value of voltage developed across
~ during the positive half-eycle of line voltage. This
capacitor voltage is represented by points A and B for
the low and high line-voltage conditions, respectively.
The instantaneous
voltages across ~ just before the
SCR is triggered are represen.ed by points C and D for
the low and high line-voltage conditions, respectively.
The voltage difference between points A and C and
between points Band D is equal to the breakdown voltage of the diac.
Fig.2 illustrates
that the conduction time of the
SCR is decreased as line voltage increases,
and is
increased when the line voltage decreases.
By proper
selection of the values of the voltage-divider-ratio resistors R3 and R4, it is possible to prevent the load
',oltage from varying more than 3 per cent with a 3O-percent (approximate) change in line voltage.
It should be mentioned that during measurements
of load voltage careful consideration must be given to
the measuring instruments. Most of the circuits described
in this Note produce a non-sinusoidal voltage across the
load; the rms value of this voltage can be measured
only with a true rms meter, slh as a thermocouple
meter.
It is possible, however, that in certain applications the low input impedance of the thermocouple
meter might load down the circuit being measured.
In
such cases, a high-input-impedance rms meter may be
required.
"- 12av
60Hz
C,
47p.F"
200 V
IN THE CLOSErLOQP REGULATOR R6 IS REPLACED BY A

PHOTOCELL
ReA 502520
AND A POTENTIOMETER
IN SERIES WITH A G'VOLT INCANDESCENT LAMP IS
CONNECTED IN PARALLEL WITH THE HEATER TERMINALS
NOTE: ALL RESISTOR VALUES ARE IN OHMS
Fig.3 - A circuit using a regulator to maintain voltage

constant
across
load:
load voltage.
Phase-eontrolled
voltage regulation is
provided by a silicon unilateral switch Ql * and a control
circuit, as follows: Capacitor C2 is charged from a voltage source that is maintained constant by zene:' diode
Zl; diodes Dl' D2' and D3 compensate for the change
in zener voitage with temperature.
The voltage across
C2 increases until the sum of the breakover vo1tage of
Ql and the instantaneous voltage across R5 is exceeded.
At this point, a positive pulse is coupled into the gate
of Q2 by means of the pulse transformer Tl'
The SCR
Q2 then switches on for the remainder of the positive
cycle of line voltage.
Control of the conduction angle
of the SCR varies rms voltage to the heater.
A silicon unilateral switch is a silicon, planar. monolithic

integrated circuit that has thyristor electrical characteristics
closely approximating those of an ideal four-layer diode. The
device shown switches at approximately 8 volts.
As line voltage increases, the voltage across R5

also increases;
because C2 charges along the same
exponential curve, however, the voltage across C2 must
attain a larger value before Q2 is turned on. The net
effect is a delay in the trigger pulse and reduced rms
voltage across the heater. In a similar manner, as line
voltage is reduced, the SCR turns on earlier in the cycle
and increases the effective voltage across the heater.
By proper adjustment of potentiometer Flu in conjunction
with potentiometer R4, it is possible to obtain excellent
heater-voltage compensation over a range of line voltages. Fig.4 shows the waveforms associated with the
heater-regulator circuit.
6]B
CURVE A:OPEN-LOOP
REGULATION
CURVE e: CLOSED-LOOP REGULATION
READINGS TAKEN AT 25"C
%T<-
+3/..
6
t-3
~~
I'
~
( .
20"4
10 % OF APPROXIMATELY
120
II)
5.6
Fig.5 - Heater voltage as a function of line voltage of

the open- and closed-loop regulators.
circuit as an ac voltage regulator with closed-loop
feedback control.
The closed-loop regulator produces
less error, is more resistant to the drift effects of components, and is easier to adj ust than the open-loop
regulator.
The lamp used in the closed-loop regulator is rated
at 6 volts, but the series resistor limits the voltage to
approximately 2 volts so that extremely long lamp life
can be expected. An additional advantage at low voltage
is that the light intensity varies linearly with the voltage
across the lamp so that a small increase in voltage
increases brightness markedly; near rated voltage the
intensity does not vary linearly and the variation in
brightness is not very apparent.
A loss in sensitivity
would result if the lamp were operated at its rated
voltage.
The open-loop regulator can regulate 6 volts to
within 3 per cent within a temperature range from
10 to 400C with an input-voltage swing of 10 per cent.
The closed-loop regulator can regulate 6 volts to within
2 per cent within a temperature range from 0 to 600C
with an input-voltage swing of 10 per cent.
Fig.4 - Voltage waveforms

Fig.3.
exhibited
by the circuit of
Curve A in Fig.5 shows heater voltage as a function

of line voltage for the open-loop regulator circuit shown
in Fig.3. Curve B in Fig.5 shows a similar curve for a
closed-loop regulator using a lamp-photocell module.
The lamp, in series with a limiting resistor, is connected
across the heater terminals, and the photocell replaces
R6. The lamp unit senses the phase-controlled
true
rms heater voltage.
Changes in lamp brightness produced by heater-voltage variations change the photocell
resistance in reverse proportion to the lamp voltage. The
remainder of the circuit functions as previously described
except that regulation is obtained not only through the
monitoring of the instantaneous magnitude of line voltage,
but also through the sensing of the true rms voltage
across the heater.
This characteristic
identifies the
Light-dimmer circuits are becomingly increasingly

popular for home use.
Fig.6 shows a typical lightdimmer configuration.
This circuit provides the advantages of low hysteresis and continuous control up to
the maximum conduction angle.
At low illumination
levels, however, the variable resistor Rp is adjusted to

a high resistance setting.
If a momentary drop in line
voltage occurs at this condition, the high breakover
voltage of the diac in conjunction with the high resistance coold result in a circuit misfire; i.e., the light
could be extinguished and remain so until the circuit
is reset by readjustment of the control to a high illumination setting.
A natural successor to the circuit of Fig.6 might
consist of a configuration which not only provides the
light-dimming function but also extends the life of the
lamp being controlled.
One of the major causes of reduced lamp life can be directly attributed to line-voltage
fluctuations and in particular to periods of over-voltage.
ominal line voltage is approximately 120 volts 10
per cent; it is the + 10-per-eent variation that causes
lamps to reach end-of-life prematurely.
is subjected to voltages of 120 volts plus 3 per cent and

minus 10 per cent. The - lQ-per-eent line dip has little
effect on lamp-life reduction.
The circuit also regulates lamp voltage for various
settings of potentiometer Rp. Fig.8 shows line voltage
as a function of lamp voltage for two settings of Rp for
the circuits of Figs.6 and 7. These curves illustrate the
increased regulation achieved by the improved circuit.
FULL
BRIGHTNESS
/?'
.....
,./>
...-
3"
_'--
----.
- 30Y.--_
90
A technique for limiting or clamping the lamp voltage, without sacrificing any of the desirable features of
the dimmer of Fig.6, is shown in Fig.7; LF and CF
suppress rf interference.
Fig.7 employs the basic regulating circuit described earlier; however, in the configuration shown, the switching voltage of Ql, a silicon
bilateral switch,* is reduced by steering diodes 01 and
02 in conjunction with resistor R. This arrangement not
IK
Il2w
01
CF
OI ...
F
200V
SILICON
BILATERAL
L __
SWITCH
ZI
120V
60Hz
r -
02
ReA
*, T28008
M12
!50K
~POT
r-
12v :
400mWI
22 :
12\1
,r-
--,
L_
01
02
TYPE TYPE
IN3193 IN3193
400mWI
-J
*OASHED LINES INDICATE MAJOR

ADDITIONAL COMPONENTS REQUIRED
TO ACHIEVE VOLTAGE CLAMP
NOTE ALL RESISTOR
VALUES ARE IN OHMS
only makes it possible to achieve larger conduction

ang les, but also prevents the circuit from misfiring at
low illumination levels when it is subjected to dips in
line voltage. The light-dimmer circuit in Fig.7 is capable of clamping the high-line-voltage condition to within
+3 per cent of its nominal value; as a result, the lamp
A silicon bilateral s\\'itch is a silicon, planar, monolithic

integrated circuit that switches at approximately 8 volts in
both diI''ctions.
w
c
"
~ 60
~
~
~ <0t-
':L
"
I
I
IOIAC
FAILED
:TO
TRIGGER:
,
I
I
I
Fig.8 - Lamp voltoge as a function of line voltage for

two values of Rp in the circuits of Figs.6 and 7.
The dimmer configuration of Fig.7 can also be used
as a 12Q-volt full-wave heater regulator.
In this application the light is replaced by a heater load. If the load
can be operated at a nominal 100 volts with an input
voltage of 120 volts. more symmetrical regulation can be
realized; i.e., 3 per cent regulation can be achieved
with a line variation of 10 per cent. In the full-wave
heater-regulator application, diodes 01' 02' and resistor
R in Fig.7 can be eliminated because a wide conduction
angle is not required.
Such a control might also be used in colorimetry, an
application in which it is necessary to match the color
(and temperature) of a lamp with a standard; in this application line-voltage fluctuations can create a measurement error. Other areas of application, such as photography, heater control, and hot-plate and solder-pot control, can also make effective use of the dimmer circuit
with over-voltage clamp.
VOL TAGEREGULATED
DC SUPPLY
A simple but stable dc power supply us ing thyristors is shown in Fig.9. The power-supply section consists of the well known full-wave bridge with RC filter.
z,
,z
c.
V
4QQmW
C,
05
TYPE
IN3193
0.1 ~F
20Cv
22 ~F
200v
06
TYPE
IN3193
-Cz
022,.,.F
200 V
A line-voltage tl'ansformer is employed to step-down the

supply voltage of 120 volts rms to approximately 12.5
volts rms. If a dc output voltage greater than 10 volts
is desired, a transformer with a lower primary-to-secondary turns ratio should be employed.
The heart of the regulator shown in Fig.9 is the
phase-controlled
triac on the primary side of the line
transformer.
Because the load presented to the triac is
somewhat inductive, an RC network is liSed to assure
(X"opercommutation; LF and CF sup(X"ess rf interference.
The circuit automatically compensates for wide variations in line voltage. Fig.10 shows a curve of line voltage as a function of load voltage, Edc' for a constant
load of 10 ohms. Fig.ll shows the voltage waveforms
associated with the circuit of Fig.9.
If increased line, temperature, and load conpensation is desired in the regulated dc supply of Fig.9, a
closed-loop type of control can be obtained by use of a
photocell in place of RF and connection of a lamp across
the output terminals of the supply in such a way that the
light from the lamp can impinge on the photocell surface.
c
o
..J
~.6
70
Fig.IO - Load voltage as a function of line voltage for the

circuit of Fig.9; load resistance is constant at 10 ohms.
Fig.11 Voltage
Fig.9.
waveforms
exhibited
by the circuit
of
Other thyristors than those shown in this Note can

also be used for voltage regulation. The selection of an
SCR or triac for a particular regulating circuit depends
Triac
r::
0
~ ''';:a
_
o
O.35A
QuickSelection
6A
SCR Quick-Selection
Chart
lOA
15A
30A
40A
T2300B
T2700B
2N5567
2N5571
T6401B
2N5441
> ~ T2302B
T2710B
2N5569
2N5573
T6411B
2N5444
60 T2310B
N
r:: T23000
0
- 0';: T23020
0
o ~
T23100
..
60
... T23120
N
r::
..J
2N3528
5A
2N3228
Chart
12.5A
15A
25A
2N3669
2N1846A
1N685
52710B
35A
2N3871
2N3897
53700B
T2312B
> ~
2A
T4700B
~ ..J"
on the voltage and current requirements of the application. The quick-selection charts shown below indicate
the capabilities of RCA thyristors for this type of usage.
T27000
2N5568
2N5572
T64010
2N5442
T27100
2N5570
2N5574
T6411D
2N5445
T47000
2N3529
2N3525
527100
537000
2N3670
2N1849A
2N688
2N3872
2N3898
ffil(]5LJD
Solid State
Application Note
AN-4124
Division
Handling and Mounting of

ReA Molded Plastic
Transistors and Thyristors
RCA power transistors and thyristors (SCR's and triacs) in
molded -silicone-plastic packages are available in a wide range
of power-dissipation ratings and a variety of package configurations. This Note provides detailed guidelines for
handling and .mounting of these plastic-package devices, and
shows different types of packages and suggested mounting
hardware to accommodate various mounting arrangements.
Recommendations are made for handling of the packages
during the forming of le"ds to meet specific mounting
requirements. Various mounting arrangements, thermal considerations, and cleaning methods are described. This information is intended to augment the data on electrical
characteristics,
safe operating
area, and performance
capabilities in the technical bulletin for each type of
plastic-package transistor or thyristor. (Data on mechanical
and environmental
capabilities of RCA plastic-package
transistors are also available in a periodically updated
Reliability Report, RCA Publication No. HBT-600.)
of thyristors supplied in TO-220AA packages, however,

differs from that of thyristors supplied in conventional
T0-66 packages so that some hardware changes are required
to effect a replacement. The TO-220AA Versawatt package is
also supplied with an integral heat sink. Fig. 4 shows the
dimensional outline for this heat sink. The use of the integral
heat sink reduces the junction-to-air thermal resistance of the
package from 700C per watt to 350C per watt.
The RCA molded-plastic high-power packages are also
supplied in several configurations for flexibility of application. The JEDEC Type TO-219AB, shown in Fig. 5, is the
basic high-power plastic package. Fig. 6 shows a JEDEC Type
TO-219AA version of the high-power plastic package.
L~
IEAT,HGPLAHE
, ,
TYPES OF PACKAGES
Ix
-L
"
,+
Two basic types of molded-plastic packages are used for RCA

solid-state power devices. These types include the RCA
Versawatt packages for medium-power applications and the
RCA high-power plastic packages, both of which are
specifically designed for ease of use in many applications.
Each basic type offers several different package options, and
the user can select the configuration best suited to his
particular application.
Figs. I through 3 show the options currently available for
devices in RCA Versa watt packages. The JEDEC Type
TO-220AB in-line-lead version, shown in Fig. I, represents
the basic style. This configuration features leads that can be
formed to meet a variety of specific mounting requirements.
Fig. 2 shows a package configuration that allows a Versawatt
package to be mounted on a printed-circuit board with a
O.lOO-inch grid and a minimum lead spacing of 0.200 inch.
Fig. 3 shows a JEDEC Type TO-220AA version of the
Versawatt package. The dimensions of this type of transistor
package are such that it can replace the JEDEC T0-66
transistor package in a commercial socket or printed-circuit
board without retooling. The pin-connection
arrangement
H:] '/""0'
.L~
~P
Ll,
~*
=r-i
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!)
I
<ISo ~
INCHES
INCHES
SYMBOL
SYMBOL
,
A
'I
'2
0
d
E
E,
E2
b2
POSITION OF LEADS TO BE
MEASURED AT THIS PLANE
MIN.
MAX.
.140
.020
.012
.190
,
"F
.045
.038
.045
.070
.560
.080
.625
.115
.330
.365
.300
.420
.385
.320
MIN.
MAX.
.190
.090
.045
.230
.SlID
.210
.110
.055
LI
~p
0
Z
.139
.040
.100
Fig. 1 - Dimensional outline of the JEDEC

in-line-lead Versawatt transistor package.
.270
.562
.250
.147
.060
.120
TO-220AB
~,~
~.
SECTION
"
A-A
:9g:t::;;~8
0962
0958
44B
452
0378
0387
MEASURED
fAT
BOTTOM
g~~
01;8
27
0502
SYMBOL
A
B
b
bl
b2
L
,
'1
0
E
E,
E2
INCHES
MAX
.190
.850
.045
.070
.015
.030
.020
.038
. 30
.270
.180
.220
.130
.170
.560
.625
.410
.330
.365
.385
.320
300
MIN.
SYMBOL
.140
'1
'2
'3
F
H
K
l,
+p
0
S
Z
INCHES
MAX
.210
.110
.243
.200
.070
.270
.085
.090
.139
.147
.040
.060
.685
.655
.120
100
f-gmj
MIN.
.190
.090
.203
.190
.045
.230
.080
.070
g.~~~
~O.75
ALL
!002
DIMENSIONS
fOR
DIMENSION
2ND
ARE
IN
PLACE;
INCHES
!O.005
UNLESS
fOR
OTHERWISE
3RO
PLACE
SHOWN.
AND
TOlERANCE.S
~112
fOR
ARE:
ANGULAR
Fig. 4 - Integral heat sink used with

Versawatt package shown in Fig. 3.
the
TO-220AA
Fig. 2 . Dimensional outline of Versawatt transistor package

designed for mounting on printed-circuit boards.
I'-=:]
~
SECTIONX~
SYMBOL
SYMBOL
A
b
b
b2
0
d
E
E,
E2
INCHES
MIN.
MAX.
. 140
.190
.020
.038
.012
.045
.045
.070
.560
.625
.080
.115
.330
.420
.365
.385
.300
.320
.190
.210
SYMBOL
F
H
l
A
B
C
0
INCHES
MIN.
MAX.
.045
.230
.360
.055
.270
.422
.050
.147
.610
<t>p
.139
0
0,
S
Z
.040
.580
.100
.060
.610
.lZ0
Fig. 3 . JEDEC TO220AA Versawatt transistor package

designed for direct replacement of the JEDEC T0-66
package.
01
d
E
F
II
p
LI
1_
BASE
INCHES
MAX.
. 160
.200
.045
.060
.025
.045
.890.
.910
.480
.515
.100
.120
.480
.520
.055
.070
.415
.560
.128
.150
.740
.760
.sZO
.500
MIN.
Fig. 5 - JEDEC TO-219AB high-power molded-plastic transistor package.
T
SEATING
PLANE
~Ll
+ -
_:=1
5YMBOL
INCHE5
MIN.
MAX.
01
.160
.045
.025
.890
.480
.480
.200
.060
.045
.910
.515
.520
B
C
0
---
ALL DIMENSIONS
-INCHES-
SYMBOL
--;F
L
p
IN INCHES
Fig. 7 . TO219AA plastic transistor package designed for

mounting on printed-eircuit boards.
MIN.
.460
.055
.370
.128
.740
.500
MAX
.505
.070
.450
.150
.760
.520
Fig. 6 - JEDEC TO219AA plastic package designed for use

as a direct replacement for the hermetically
TO3 transistor package.
sealed JEDEC
use of a properly designed fixture for this operation

eliminates the need for repeated lead bending. When the use
of a special bending fixture is not practical, a pair of
longnosed pliers may be used. The pliers should hold the
lead firmly between the bending point and the case, but
should not touch the case. Fig. 8 illustrates the use of
long-nosed pliers for lead bending. Fig. 8(a) shows techniques
that should be avoided; Fig. 8(b) shows the correct method.
The RCA highpower plastic package is also available with an

attached headercase lead, as shown in Fig. 7. This three-lead
package is designed for mounting on a printedcircuit board.
'9
LEAD IS NOT RESTRAINED
BETWEEN
BENDING POINT AND PLASTIC
CASE.
LEADFORMING
TECHililQUES
RCA Versawatt plastic packages are both rugged and versatile

within the confines of commonly accepted standards for
such devices. Although these versatile packages lend themselves to numerous arrangements, provision of a wide variety
of lead configurations to conform to the specific require
men"ts of many different mounting arrangements is highly
impractical. However, the leads of the Versawatt in-line
package can be formed to a custom shape, provided that they
are not indiscriminately twisted or bent. Although these
leads can be formed, they are not flexible in the general
sense, nor are they sufficiently rigid for unrestrained wire
wrapping.
Before an attempt is made to form the leads of an in-line
package to meet the requirements of a specific application,
the desired lead configuration should be determined, and a
lead-bending fixture should be designed and constructed. The
Fig. 8 - Use of long-nosed pliers for

incorrect method; (b) correct method.
lead bending:
(a)
When the leads of an in-line plastic package are to be formed,

whether by use of longnosed pliers or a special bending
fixture, the following precautions must be observed to avoid
internal damage to the device:
I.
Restrain the lead between the bending point and

the plastic case to prevent relative movement
between the lead and the case.
2.
When the bend is made in the plane of the lead

(spreading), bend only the narrow part of the lead.
When the bend is made in the plane perpendicular
to that of the leads, make the bend at least 1/8
inch from the plastic case.
Do not use a lead-bend radius of less than 1/16
inch.
Avoid repeated bending of leads.
3.
4.
5.
The leads of the TO-220AB Versawatt in-line package are not

designed to withstand. excessive axial pull. Force in this
direction greater than 4 pounds may result in permanent
damage to the device. If the mounting arrangement tends to
impose axial stress on the leads, some method of strain relief
should be devised. Fig. 2 illustrates an acceptable leadforming method that proVides this relief.
Wire wrapping of the leads is permissible, provided that the
lead is restrained between the plastic case and the point of
the wrapping. Soldering to the leads is also allowed; the
maximum soldering temperature, h<Jwever, must not exceed
2750C and must be applied for not more than 5 seconds at a
distance greater than 1/8 inch from the plastic case. When
wires are used for connections, care should be exercised to
assure that movement of the wire does not cause movement
of the lead at the lead-to-plastic junctions.
The leads of the RCA molded-plastic high-power packages

are not designed to be reshaped. Simple bending of the leads,
however, is permitted to change them from a standard
vertical to a standard horizontal configuration, or conversely.
Bending of the leads in this manner is restricted to three
90-degree bends; repeated bendings, therefore, shauld be
avoided.
~SC.EW
O
SUPPLIED
NOT
9 .
DF137A
INTEGRAL
INSUlATING
WITH DEVICE
WASHER
DF103C
MICA
INSULATOR
(HOLE
FOR
4-40
SCREW)
cr"",",
METAL
lOCK
WASHE.
@)
WASHER
HEX.
'OLOE.
HEX.
SCREW
NUT
LUG
}
NOT
SUPPLIED
WITH
DEVICE
NUT
(b)
632
~N()T"'\lA;lA8L(f_OlC"
NR231A
HR231.\
RECTANGULAR
WASHER
METAL
REC"':ANCUlAR
::~:,~:::;,~:,,,",,
~I
MICA
METAL
WASHER
AVAILABLE
AT
PUBLISHED
HARDWARE
PRICES
::;'~':.~;:.,,","o~.
INSULATOR
/HOLEDIA.-O.1450.141m
6 (3~:~~~,';:2(vICE
0
<3
6
HEAT SINK
'CHASSIS'
4953347
&
INSULATING
I. D . 0.156
e)
S--
METAL
WASHER
LOCK
WASHER
HEX
SOLDER
NUT
LUG
HEXNUT
~~~~i~~~6~4gl:~~
SHOULDER
MAX.
THICKNESS"
~~~~~~~I~:~E::~
MAX
S
@
BUSHING
,n. (4.00 mm)
~OT
A,VAILA8LE
fROM
ReA
fe)
....:2..
@
In the UnIted Kingdom, Europe, M,ddle East, and Africa, mountinghardware policies may differ; check the availability of all items
with your ReA sales representative
or supplier.
shown
Fig. 9 - Mounting arrangements for Versawatt transistors: (a)

and (b) methods of mounting in-line-lead types; (c) chassis
mounting; (d) mounting on printed-eircuit boards.
Fig. 9 shows recommended mounting arrangements and

suggested hardware for the Versawatt transistors. The rectangular washer (NR23IA) shown in Fig. 9(a) is designed to
minimize distortion of the mounting flange when the
transistor is fastened to a heat sink. Excessive distortion of
the flange could cause damage to the transistor. The washer is
particularly important when the size of the mounting hole
exceeds 0.140 inch (6-32 clearance).l.arger holes are needed
to accommodate insulating bushings; however, the holes
should not be larger than necessary to provide hardware
clearance and, in any case, should not exceed a diameter of
0.250 inch. Flange distortion is also. possible if excessive
torque is used during mounting. A maximum torque of 8
inch-pounds is specified. Care should be exercised to assure
that the tool used to drive the mounting screw never comes
in contact with the plastic body during the driving operation.
Such contact can result in damage to the plastic body and
internal device connections. An excellent method of avoiding
this problem is to use a spacer or combination spacerisolating bushing which raises the screw head or nut above
the top surface of the plastic body, as shown in Fig. 10. The
material used for such a spacer or spacer-isolating bushing
should, of course, be carefully selected to avoid "cold flow"
and consequent reduction in mounting force. Suggested
materials for these bushings are diallphthalate, fiberglassfilled nylon, or fiberglass-filled polycarbonate. Unfilled nylon
should be avoided.
Fig. II shows the recommended hardware and mounting

arrangements for RCA high-power molded-plastic transistors.
These types can be mounted directly in a socket similar to
that shown in Fig. II (b). The precautions listed for the
Versawatt packages should also be followed in the mounting
of the high-power molded-plastic packages.
y"." ....
~
SHOULDER
BUSHING
Modification of the flange can also result in flange distortion

and should not be attempted. The transistor should not be
soldered to the heat sink by use of lead-tin solder because the
heat required with this type of solder will cause the junction
temperature of the transistor to become excessive.
The TO-220AA plastic transistor can be mounted in
commercially available T0-66 sockets, such as UID Electronics Corp. Socket No. PTS4 or equivalent. For testing
purposes, the TO-220AB in-line package can be mounted in a
Jetron Socket No. CD74-104 or equivalent. Regardless of the
mounting method, the following precautions should be
taken:
I.
Use appropriate hardware.
2.
Always fasten the transistor to the heat sink before

the leads are soldered to fixed terminals.
3.
Never allow the mounting tool to come in contact

with the plastic case.
4.
Never exceed a torque of 8 inch-pounds.
5.
Avoid oversize mounting holes.
6.
Provide strain relief if there is any probability that

axial stress will be applied to the leads.
7.
Use insulating bushings to prevent hot-creep

problems. Such bushings should be made of
diallphthalate, fiberglass-filled nylon, or fiberglassfilled polycarbonate.
Fig. 10 - Mounting arrangements in which an isolating

bushing is used to raise the head of the mounting screw
above the plastic body of the Versawatt transistor.
The maximum allowable power dissipation in a solid-state

device is limited by its junction temperature. An important
factor to assure that the junction temperature remains below
the specified maximum value is the ability of the associated
thermal circuit to conduct heat away from the device.
When a solid-state device is operated in free air, without a
heat sink, the steady-state thermal circuit is defined by the
junction-to-free-air thermal resistance given in the published
data on the device. Thermal considerations require that
there be a free flow of air around the d'evice and that the
power dissipation be maintained below that which would
cause the junction temperature to rise above the maximum
rating. When the device is mounted on a heat sink, however,
care must be taken to assure that all portions of the thermal
circuit are considered.
2 METAL
2 LOCK
WASHERS
WASHERS
2 HEX.
1 SOLDER
NUTS
LUG
2HEX.NUTS
bSocket
No. LS T ~ 1702-1 (Industrial
Hardware
Corp.,
109 Prince
St., N.Y.,
N.Y.
or
~
@
2 METAL
2 LOCK
WASHERS
WASHERS
2 HEX.
, SOLDER
NUTS
LUG
2 HEX. NUTS@
Fig. 11 - Mounting arrangements for high-power plastic-package

transistors: (a) chassis mounting;
circuit-board mounting.
(b) socket mounting;
(c) printed-
equivalent)
Fig. 12 shows the thermal circuit for a heat-sink-mounted

transistor. This figure shows that the junction-to-ambient
thermal circuit includes three series thermal-resistance components, i.e., junction-to-case, IJJ-C; case-to-heat-sink,lJc_s;
and heat-sink-to-ambient,1J S-A. The junction-to-case thermal
resistance of the various transistor types is given in the
individual technical bulletins on specific types. The heatsink-to-ambient thermal resistance can be determined from
the technical data provided by the heat-sink manufacturer, or
from published heat-sink nomographs. The case-to-heat-sink
thermal resistance depends on several factors, which include
the condition of .the heat-sink surface, the type of material
and thickness of the insulator, the type of thermal compound, the mounting torque, and the diameter of the
mounting hole in the heat-sink_
TJ
junction
TC
TS
case temperature
temperature
Operation of the transistor with heat-sink temperatures of

1000C or greater results in some shrinkage of the insulating
bushing normally used to mount power transistors. The
degradation of con tact thermal resistance (refer to Figs. 13
and 14) is usually less than 25 per cent if a good thermal
compound is used. (A more detailed discussion of thermal
resistance, including nomographs, can be found in the RCA
Solid State Power Circuits, Technical Series SP-52.)
During the mounting of RCA molded-plastic solid-state
power devices, the following special precautions should be
taken to assure efficient heat transfer from case to heat sink:
I.
Mounting torque
inch-pounds.
2.
The mounting holes should be kept as small as

possible.
3.
Holes should be drilled or punched clean with no

burrs or ridges, and chamfered to a maximum
radius of 0.010 inch.
4.
The mounting surface should be flat within 0.002

inch/inch.
5.
Thermal grease (Dow Corning 340 or equivalent)

should always be used (on both sides of the
insulating washer if one is employed).
6.
Thin insulating washers should be used (thickness

of factory-supplied mica washers ranges from 2 to 4
mils).
7.
A lock washer or torque washer should be used,

together with materials that have sufficient creep
strength to prevent degradation of heat-sink
efficiency during life.
temperature
= heat-sink
TA= ambient temperature

()J/C = junction-ta-case
thermal
resistance
0e/s = case-to-heat-sink
thermal resistance
(JS/A= heat~sink-to-ambient thermal resistance
Fig. 12 - Thermal equivalent circuit for a transistor mounted

on a heat sink_
Fig. 13 shows a set of curves of typical case-to-heat-sink

thermal resistance of the Versawatt transistor as a function
of mounting torque for several mounting arrangements.
Curves A through D show typical case-to-heat-sink thermal
resistance for the mounting arrangements shown in Figs. 9(a)
through 9(d). Curves E and F are representative of a
Versa watt transistor mounted over a heat-sink mounting hole
that has a diameter of 0.140 inch (No.6 screw clearance).
Curve E shows the wide variation in thermal resistance with
torque when the transistor is mounted dry. Curve F shows
the effect on con tact thermal resistance of a thin layer of
Dow Corning No. 340 silicone grease applied between
transistor and heat sink. For torques within the recomrr:ende'd range of 4 to 8 inch-pounds, contact thermal
resistance is reduced to between 18 and 25 per cent of the
dry values.
The curves shown in Fig. 14 represent typical case-to-heatsink thermal resistance of the high-power molded-plastic
transistor package as a function of mounting torque. The
thermal resistances shown by curves A and C are representative of the mounting arrangements shown in Fig_ II (a)
through 11 (c). Curves B and D are typical for mounting
without mica over heat-sink mounting holes that have a
diameter of 0.113 inch (No.4 screw clearance). The effect of
a thin layer of silicone grease on contact thermal resistance is
illustrated by a comparison of curves Band D.
should be between
4 and 8
A wide variety of solvents is available for degreasing and flux

removal. The usual practice is to submerge components in a
solvent bath for a specified time. From a reliability standpoint, however, it is extremely important that the solvent,
together with other chemicals in the solder-deaning system
(such as flux and solder covers), not adversely affect the life
of the component. This consideration applies to all nonhermetic and molded-plastic components.
It is, of course, impractical to evaluate the effect on
long-term transistor life of all cleaning solvents, which are
marketed under a variety of brand names with numerous
additives. These solvents can, however, be classified with
respect to their component parts, as either acceptable or
unacceptable_ Chlorinated solvents tend to dissolv-:lthe outer
package and, therefore, make operation in a humid atmosphere unreliable. Gasoline and other hydrocarbons cause the
inner encapsulant to swell and damage the transistor. Alcohol
and unchlorinated freons are acceptable solvents_ Examples
of such solvents are:
Alpha Reliaros No. 320-33

Alpha Reliaros No. 346
Alpha Reliaros No. 711
Alpha Reliafoam No. 807
Alpha Reliafoam No. 809
Alcohol (isopropanol, methanol, and special
denatured alcohols, such as SDAI,
SDA30,
SDA34, and SDA44)
Alpha Reliafoam No. 811-13

Alpha Reliafoam No. 815-35
Care must also be used in the selection of fluxes in the

soldering of leads. Rosin or activated rosin fluxes are
recommended, while organic or acid fluxes are not. Examples of acceptable fluxes are:
If the completed assembly is to be encapsulated, the effect

on the molded-plastic transistor must be studied from both a
chemical and a physical standpoint.
--- r-
,I-
o
2
MOUNTING TORQUE-iN-LBS
CURVE
MOUNTING
ARPoANGEMENT
HEAT SINK
HOLE
FIGURE
DIA.UN.)
MICA
THICKNESS
IMILS)
THERMAL
COMPOUND
9(.)
.250
Dow Corning No.340
91b;
.113
Dow Corning No.340
91.)
.250
91b)
.113
2
2
Dow Corning No.340
E
F
.140
None
.140
None
Dow Corning No.340
None
Dow Corn in9 No.340
Fig. 13 - Typical caseto-heat-sink thermal resistance as a

function of mounting torque for an RCA Versawatt transistor.
CURVE
A
B
C
0
MOUNTING
ARRANGEMENT
FIGURE
MICA
THICKNESS
IMILSI
11(01 thru 11 (0)
111.1 thru 11 Ie),
Fig. 14 - Typical case-to-heat thermal resistance as a function

d mounting torque for an RCA high-power plastic-package
transistor.
4
None
2
None
THERMAL
COMPOUND
Dow Corning No.340
None
Dow Corning No.340
Dow Corning No.340
OOm3LJD
Thyristors
Solid State
Division
Application Note
AN-4242
A Review of Thyristor
Characteristics and Applications
Thyristors,
both
SCR's
and triacs,
are now widely
accepted
in power
applications
in power-control
applications.
With the emphasis
in such
applications
placed on low cost, small package size, and
cont rol
became
devices
generated
circuit
is referred
simplicity,
reliability
This
thyristors
exceeding
ote
these
requirements
that of electromechanical
describes
and typical
satisfy
the
applications
operation.
with
counterparts.
ratings.
characteristics.
parallel
provide
to those
the
need
new
bidirectional
A triac
SCR's (p-n-p-n)
oriented
symmetrical
bidirectional
can
for complete
family
of
current
properties
be considered
in opposite
characteristics.
ac
thyristor
as two
directions
to
of these devices.
arc semiconductor
istics similar
The
to provide
to as triacs.
Two-Transistor
Thyristors
increased,
apparent.
devices
of thyratron
that
lubes;
have
more
characterspecifically,
they
arc semiconductor
switches
whose
bistable
state
depends
on the regenerative
feedback
associated
with a
pn-p-n structure.
Basically, this group includes any bistable
semiconductor
device that has three or more junctions
(i.e .
Analogy
The bistable action of thyristors can be explained by analysis

of the structure
of an SCR. This analysis can be related to
either
operating
quadrant
of a triac because
essentially
two parallel SCR's oriented in opposite
a triac is
directions.
A two-transistor
analogy of an SCR is illustrated
in Fig. I.
Fig. I (a) shows the schematic
symbol for an SCR, and Fig.
l(b) shows the p-n-p-n structure
the symbol represents.
In
four or more semiconductor

layers) and can be switched
from a high-impedance
(OFF) state to a conducting
(ON)
state, and from the conducting
(ON) state to the highimpedance
(OFF) state, within at least one quadrant
of the
principal-voltage
characteristics.
the two-transistor
model for the SCR shown in Fig. l(c), the
interconnections
of the two transistors
are such that regenerative action can occur when a proper gate signal is applied
to the base of the lower n-p-n transistor.
There are several types

in number
of electrode
transistor
In the diagram
istics associated
vol tage-current
thyristors,
(SCR's),
with the third

characteristics_
commonly
and
of thyristors,
which differ primarily
terminals
and operating
character-
called
bidirectional
quadrant
(negative)
Reverse-blocking
silicon
triode
thyristors,
triacs,
are the most
rectifiers
have satisfied
popular
types.
the requirements
switching
with
applications
electromechanical
controlled
much
or tube counterparts.
of the
triode
rectifiers
referred
to as
Silicon
controlled
of many power-
greater
reliability
than
As the use of SCR's
through
(n-p-n)
a limiting
transistor
de supply
model
of Fig. 2, the emitter
is returned
to the positive
resistor
R2, and the emitter

to the negative
to provide
a complete
(which
potential;
Because
the
of the lower
terminal
path.
of the
When
the initial principal-current
zero. If a positive pulse is then

n-p-n transistor,
the transistor
low
electrical
(p-n-p)
of a dc supply
is returned
is in the OFF state,
collector
of the upper
terminal
applied to the base of the

turns on and forces the
is also the base of the p-n-p transistor)

as
p-n-p
result,
transistor
the
flow is
current
is then
(la)
begins
in the
to
active
to a
flow.
state,
collector current (IC] = Ib2) flows into the base of the n-p-n
transistor and sets up the conditions for regeneration. If the
external gate drive is removed, the model remains in the ON
state as a result of the division of currents associated with the
two transistors, provided that sufficient principal current (Ia)
is available.
'0
~OO,
GATE
i'i:~:
CATHODE
(01
~~
GATE
..
'bl"
"I
'"
pip
GATE
"
I'
Fig. 3 illustrates the effects on latching and holding current

for resistive termination at the base of the n-p-n transistor. The collector curren t through the p-n-p transistor must
be increased to supply both the base current for the n-p-n
transistor and the shunt current through the terminating
resistor. Because the principal-current flow must be increased
to supply this increased collector current, latching and
holding current requirements also increase. The usc of the
two-transistor model provides a more concise mcaning to the
mechanics of thyristors. In thyristor fabrication, it is
generally good practice to use a low-beta p-n-p unit and to
include internal resistance termination for the base of the
n-p-n unit. Termination of the n-p-n unit provides immunity
from "false" (non-gated) turn-on. and the use of the low-beta
p-n-p units permits a wider base region to be used to support
the high voltage encountered in thyristor applications.
n
~o
CATHODE
(bl
CATHODE
Fig_ 1 - Two-transistor
(<I
analogy of an SCR: (a) schematic
symbol of SCR; (b) p-n-p-n structure represented by schematic symbol; (c) two-transistor model of SCR.
Theoretically, the model shown in Fig. 2 remains in the ON

state until the principal current flow is reduced to zero.
Actually, turn-off occurs at some value of current greater
than zero. This effect can be explained by observation of the
division of currents as the value of the limiting resistor is
gradually increased. As the principal current is gradually
reduced to the zero current level, the division of currents
within the model can no longer sustain the required
regeneration and the model reverts to the blocking state.
The two-transistor model illustrates three features of thyristors: (I) a gate trigger current is required to initiate
regeneration, (2) a minimum principal current (referred to as
"latching current") must be available to sustain regeneration,
and (3) reduction of principal-current flow results in turn-off
at some level of current flow (referred to as "holding
current") slightly greater than zero.
Fig.2 - Two-transistor model connected to show a complete

electrical path.
Fig.3 - Two-transistor model of SCR with resistive termination of the n-p-n transistor base.
Voltage and Temperature Ratings

The effects of temperature and voltage are important in
thyristors because these deviccs posscss regenerative action
and are required to support high voltage in the OFF state. In
the two-transistor model shown in Fig. 2, an increase in
temperature causes a leakage current which, if allowed to
migrate to the base of the n-p-n transistors, forces the
transistor into the active region. Regenerative action then
calls for additional leakage current, and causes the model to
switch into the ON state and establish a principal-current
flow. For reliable operation at high temperature, the base of
the n-p-n transistor should be terminated with a low value of
resistance to prevent turn-on as a result of. high-temperature
operation.
Because gate termination is required on all thyristors, ReA
devices contain a diffused internal gate-cathode resistor (the
so-called "shorted-emitter"
design) and do not require
external gate termination. Therefore, it is not necessary to
specify an OFF-state rating under the conditions of external
gate-resistance termination. The use of this internal shunt
resistance improves the OFF -state blocking capability,
provides increased immunity against false turn-on, and
slightly increases gate-current requirements.
OFF-state voltage ratings of thyristors are specified for both

steady-state and transient operation for both forward
(positive) and reverse (negative) '-'locking conditions at the
maximum junction temperature. For SCR's, voltages are
considered to be forward (positive) when the anode is at a
positive potential with reference to the cathode. Negative
voltages are referred to as reverse-blocking voltages. For
(riacs, voltages are considered to be positive when main
terminal 2 is at a positive potential with reference to main
terminal I; this condition is referred to as first-quadrant (I)
operation. Third-quadrant (III) operation occurs when main
terminal 2 is at a negative potential with reference to main
terminal I. Fig. 4 shows the principal voltage-current
characteristics for both SCR's and triacs. .
voltage. When the SCR is in the ON state, the forward

current is limited primarily by the impedance of the ext~rnal
circuit. Increases in forward (principal) current are accompanied by only a slight change in ON-state voltage.
If the triac is considered as two parallel SCR's oriented in
opposite directions to provide symmetrical curreilt flow, the
behavior of a triac under positive or reverse voltage operation
is essentially the same as that of an SCR in the forwardblocking mode.
Gate Characteristics
The breakover voltage of a thyristor can be varied, or
controlled, by injection of a signal at the gate terminal. Fig. 5
REVERSE
BREAKOVER
VOL lAGE
Ig4
THYRISTOR
ICj3
BREAKQvER
192
AS FUNCTION
191"
OF GATE CURRENT
ON STATE
V
!/CURRENT
HOLDING
shows curves of breakover as a function of gate current for

fi~st-quadrant operation of an SCR. A similar set of curves
can be drawn for both the first and the third quadrant to
represent triac operation.
-----
~::;-2-CURRENT
ON STATe
OUADRANT.m
IU.lN TERMINAL
2 NEGATIVE
Fig.4 - Principal voltage-current characteristics of sews

triacs.
and
Operation of an SCR under reverse-blocking voltage is similar

to that of a reverse-bi3sed silicon rectifier or other semiconductor diodes. In this operating mode, the SCR exhibits a
very high internal impedance, and a small reverse current
flows through the p-n-p-n structure until the reverse breakdown voltage is reached, at which time the reverse current
increases rapidly. For forward (positive) operation, the SCR
is electrically bistable and exhil:its either high impedance
(forward-blocking or OFF state) or low impedance (forwardconducting or ON state). In the forward-blocking state, a
small leakage current, considered to be of approximately the
same value as that for reverse leakage, flows through the
p-n-p-n structure. As the forward voltage is increased, a
"breakdown" point is reached at which the forward current
increases rapidly and the voltage across the SCR decreases
abruptly to a very low voltage, referred to as the forward ON
When the gate current 19 is zero, the applied voltage must

reach the breakover voltage of the SCR or triac before
switching occurs. As the value of gate current is increased,
however, the ability of a thyristor to support applied voltage
is reduced and there is a certain value of gate current at
which the behavior of the thyristor closely resembles that of
a rectifier. Because thyristor turn-on, as a result of exceeding
the breakover voltage, can p,oduce instantaneous power
dissipation during the switching transition, an irreversible
condition may exist unless the magnitude and rate of rise of
principal current is restricted to tolerable levels. For normal
operation, therefore, thyristors are operated at applied
voltages lower than the breakover voltage, and are made to
switch to the ON state by gate signals of sufficient amplitude
to assure complete turn-on independent of the applied
voltage. Once the thyristor is triggered to the ON state, the
principal-current flow is independent lJf gate voltage or gate
current, and the device remains in the ON state until the
principal-current flow is reduced to a value below the holding
current required to sustain regeneration.
The gate voltage and current reqUired to switch a thyristor
from its high-impedance (OFF) state to its low-impedance
(ON) state at maximum rated forward anode current can be
determined from the circuit shown in Fig. 6. Resistor R2 is

selected so that the anode current specified in the manufacturer's ratings flows when the device latches into its
low-impedance or ON state. The value of RI is gradually
decreased until the device under test is switched from its
OFF state to its low-impedance or ON state. The values of
gate current and gate voltage immediately prior to switching
are the values required to trigger the thyristor. For an SCR,
there is only one mode of gate firing capable of switching the
device into the ON state, i.e., a positive gate signal for a
positive anode voltage. If the gate polarity is reversed
(negative voltage), the reverse current flow is limited by the
value of R2 and the gate-cathode internal shunt. The value of
power dissipated for the reverse gate polarity is restricted to
the maximum power-dissipation limit imposed by the ma:lufacturer.
Fig.6 - Circuit used to measure thyristor gate voltage and

current switching threshold.
Because of its complex structure, a triac can be triggered by
either a positive or a negative gate signal regardless of the
voltage polarity across the main terminals of the device. Fig.
7 illustrates the triggering mechanism and current flow
within a triac. The gate trigger polarity is always referenced
to main terminal I. The potential difference between the two

terminals is such that gate current flows in the direction
indicated by the dotted arrow. The polarity symbol at main
terminal 2 is also referenced to main terminal I. The
semiconductor materials between the various junctions within the pellet are labeled "p" and "n" to indicate the type of
majority-carrier concentrations within the material.
For the various operating modes, the polarity of the volrage
on main terminal 2 with respect to main terminal I is given
by the quadrant in which the triac operates (either I or III),
and :he polarity of the gate signal used to trigger the device is
given by the proper symbol next to the operating quadrant.
For the 1(+) operating mode, main terminal 2 and the gate
are both positive with respect to main terminal I. Initial gate
CUi"fent flows into the gate terminal, through the p-type
layer, across the junction into the n-type layer, and out main
terminal I, as shown by the dotted arrow. As gate current
flows, current multiplication occurs and the regenerative
action within the pellet switches the triac to its ON state.
Because of the polarities indicated between the main
terminals, the principal current flows through the p-n-p-n
structure as shown by the solid arrow. Similarly, for the
other three operating modes, the initial gate-current flow is
shown by the dotted arrow, and principal-current flow
through the main terminals is shown by t;le solid arrow.
Because the direction of principal current influences the gate
trigger current, the magnitude of the current reqUired to
trigger the triac differs for each mode. The operating modes
in which the principal current is in the same direction as the
gate current require less gate trigger current; modes in which
the principal current is in opposition to the gate current
require more gate trigger current.
Because triacs are bidirectional, they can provide full-cycle
(360-degree) control of ac power from either a positive or a
negative gate-drive signal. This feature is an advantage when
it is necessary to control ac power from low-level logic
systems such as integrated-circuit logic. With gate-power
requirements for turn-on in the milliwatt region, triacs are
capable of controlling power levels up to 10 kilowatts. Thus,
the power gain associated with these thyristors far exceeds
that of transistor counterparts in the semiconductor switching field.
m{+)
Fig.7 - Current flow in a triac.
Like many other semiconductor-device parameters, the magnitude of gate trigger current and voltage varies with the
junction temperature. As thermal excitation of carriers
within the semiconductor material increases, the increase in
leakage current makes it easier for the device to be triggered
by a gate signal. Therefore, the gate becomes more sensitive
in all operating modes as the junction temperature increases.
Conversely, if a triac or SCR is to be operated at low
temperatures, sufficient gate trigger current must be provided
to assure triggering of all devices at the lowest operating
temperature expected in any particular application. Variations of gate-trigger requirements are given in the published
data for individual thyristors.
The gate current specified in published data for thyristors is

the dc gate trigger current required to switch an SCR or triac
into its low-impedance state. For practical purposes, this dc
value can be considered equivalent to a pulse current that has
a minimum pulse width of 50 microseconds. For gate-current
pulse widths smaller than 50 microseconds, the pulse-current
curves associated with a particular device should be used to
assure turn-on.
r:~90'POINT
1
1
VFB
1
I
o_l_L
i_L __
I
1
I
1
I
When pulse triggering of a thyristor is required, it is always
advantageous to provide a gate-current pulse that has a
magnitude exceeding the dc value required to trigger the
device. The use of large trigger currents reduces variations in
turn-on time, increases di/dt capability, minimizes the effect
of temperature variation on triggering characteristics, and
makes possible very short switching times. When a thyristor
is initially triggered illto conduction, the current is confined
to a small area which is usually the more sensitive part of the
cathode. If the anode current magnitude is great, the
localized instantaneous power dissipation may result in
irreversible damage unless the rate of rise of principal current
is restricted to tolerable levels to allow time for current
spreading over a larger area. When a much larger gate signal is
applied, a greater part of the cathode is turned on initially; as
a result, turn-on time is reduced, and the thyristor can
support a much larger peak anode inrush current.
Switching
Characteristics
Ratings of thyristors are based upon the amount of heat

generated within the device pellet and the ability of the
device package to transfer the internal heat to the external
case. For highperformance applications in which switching
of high peak current values but narrow pulse widths is
desired, the internal energy dissipated during the turn-on
process must be determined to assure that power dissipation
is within ratings.
When thyristors (either triacs or SCR's) are triggered by a
gate signal, the turn-on time consists of two stages, a delay
time td and a rise time tr, as shown in Fig. 8. The total
turn-on time tgt is defined as the time interval between the
initiation of the gate signal and the time for the principal
anode c~rrent flow through the thyristor to reach 90 per
cent of its maximum value for a resistive load. The delay
time td is defined as the time interval between the
SO-per-cent point of the leading edge of the gate trigger
voltage and the 10-per-cent point of the principal current for
a resistive load. The rise time tr is the time interval required
for the principal current to rise from 10 to 90 per cent of its
maximum value. The total turn-on time ton is the sum of
both delay and rise time (td + tr).
Although the thyristor is affected to some extent by the
peak off-state voltage and the peak on-state current level, the
turn-on time is influenced primarily by the magnitude of the
gate-trigger pulse current, as shown in Fig. 9. Faster turn-on
time for larger gate drive is a result of a decrease in delay
PRINCIPAL
CURRENT
I
I
--1-1
1
0_.l.J
'-
90% POINT
1-+---~
'd
--i--l- '.
I---- '"
I
I
--1
"~~time associated with the thyristor because of the increased

current density at the gate-cathode periphery. Of major
importance in the turn-on time interval is the relationship
between thyristor voltage and principal current flow through
the thyristor. During the turn-on interval, the dynamic
voltage drop is high and the current density can produce
localized hot spots in the pellet area. Therefore, it is
important that power dissipation during turn-on be restricted
to levels within device specifications.
25
50
75
DC GATE-TRIGGER
100
CURRENT
125
(IGT)-
150
175
mA
Fig.9 - Thyristor turn-on time as a function of gate trigger

current.
Turn-off time of a thyristor can be associated only with

SCR's. In triacs, a reverse voltage cannot be used to provide
circuit-commutated turn-off voltage because a reverse voltage
applied to one half of the triac structure would be a
forward-bias voltage to the other half. For turn-off times in

an SCR, the recovery period consists of two stages, a reverse
recovery time and a gate recovery time, as shown in Fig. 10.
I
of a full-wave rectifier bridge, however, there is no reverse

voltage available for turn-off, and complete turn-off can be
accomplished only if the bridge output is reduced to zero
volts or the principal current is reduced to a value lower than
the device holding current.
d"'FBdt~'
Because turn-off times are not associated with triacs due to

the physical structure of the device, a new term is introduced
called "critical rate of rise of commutation voltage", or the
ability of a triac to commutate a fixed value of current under
specified conditions. The rating can be explained by consideration of two SCR's in an inverse parallel mode, as shown
in Fig. II. SCR-I is assumed to be in the conducting state
---t-
- -
---
I
I
'1jI'
----I
I
'ofl
---j
I
When the forward current of an SCR is reduced to zero at

the end of a conduction period, application of reverse voltage
between the anode and cathode terminals causes reverse
current to flow in the SCR until the time that the reverse
current passes its peak value to a steady-state level called the
reverse recovery time trr. A second recovery period, called
the gate recovery time, tgr, must then elapse for the
forward-blocking junction to establish a depletion region so
that forward-blocking voltage can be reapplied and successfully blocked by the SCR. The gate recovery time of an SCR
is usually much longer than the reverse recovery time. The
total time from the instant reverse recovery current begins to
flow to the start of the forward- blocking voltage is referred
to as circuit-eommutated turn-off time tq.
Fig. 11 - Circuit used to demonstrate critical rate of rise of

commutation voltage.
with forward current established. As the principal cur.ent

flow crosses the zero reference point, a small reverse current
flows in SCR-I until the time that the SCR reverts to the
OFF state. The principal current is then diverted to SCR-2,
provided that sufficient gate current is available to that
device.
The structure of a triac shown in Fig. 12 indicates that the
main blocking junctions are common to both halves of the
Turn-off time depends upon a number of circuit parameters,

including on-state current prior to turn-off, rate of change of
current during the forward-to-reverse transition, reverseblocking voltage, rate of change of reapplied forward voltage,
gate trigger level, the gate bias, and junction temperature.
Junction temperature and on-state current have a more
significant effect on turn-off than any of the other factors.
With turn-off time specified on the manufacturer's data sheet
and dependent upon the conditions as outlined above,
turn-off time specification is only meaningful if all of the
above critical parameters are available in the actual application.
For applications in which an SCR is used to control 60-Hz ac
power, the entire negative half of the sine wave is a turn-off
condition and more than adequate for complete turn-off. For
applications in which the SCR is used to control the output
device. When the first half of the triac structure (SCR-I) is in

the conducting state, a quantity of charge accumulates in the
n-type region as a result of the principal current flow. As the
principal current crosses the zero reference point, a small
reverse current is established as a result of the charge

remaining in the IHype region. Because the n-type region is
common to both halves of the devices, this reverse recovery
current becomes a forward current to the second half of the
triac. The current resulting from stored charge may cause the
second half of the triac to go into the conducting state in the
absence of a gate signal. Once current conduction has been
established by application of a gate signal, therefore, com-
capability to support a fast rate of rise of applied voltage.

The result is a loss of power control to the load, and the
device remains in the conducting state in absence of a gate
signal. Therefore, it is imperative that some means be
provided to restrict the rate of rise of reapplied voltage to a
value which will permit triac turn-off under the conditions of
inductive load.
plete loss in power control can occur as a result of

interaction within the n-type base region of the triac unless
sufficient time elapses to assure turn-off. It is imperative that
triac manufacturers provide sufficient information regarding
commutating
capabiiity under maximum current and
case-temperature conditions so that triac control of ac power
for resistive loading in a 60-Hz power source can be assured.
An accepted method for keeping the com mutating dv/dt

within tolerable levels during triac turn-off is to use an RC
snubber network in parallel with the main terminals of the
triac. Because the rate of rise of applied voltage at the triac
terminal is a function of the load impedance and the RC
snubber network, the circuit can be evaluated under worstcase conditions of operating case temperature, maximum
principal current, and any value of conjunction angle. The
values of resistance and capacitance in the snubber are then
adjusted so that the rate of rise of commutating dv/dt stress
is within the specified minimum limit under any of the
conditions mentioned above. The value of snubber resistance
should be high enough to limit the snubber capacitance
discharge currents during turn-on and dampen the LC
oscillation during commutation (turn-off). Any combination
of snubber resistance and capacitance that provides the
requirements outlined above is considered satisfactory.
Commutation of triacs is more severe with inductive loads

than with resistive load~ because of the phase lag between
voltage and current associated with inductive loads. Fig. 13
shows the waveforms for an inductive load with lagging
Some of the factors affecting commutating dv/dt capability

of triacs are temperature, current magnitude, rate of change
of curren t during commutation, and frequency of the applied
principal current. With frequency directly related to commutating di/dt, early triac use was restricted to 60-Hz applications. Continued technological advances in triac device structure has resulted in faster "turn-off' capability and made
possible a new family of triacs having 400-Hz commutating
capability that is now being offered to circuit designers who
must work with 400-Hz source voltages.
current power factor. At the time the current reaches zero

crossover (point A), the half of the triac in conduction kgins
to commutate when the principal current falls below the
holding current required to sustain regeneration. Because the
high-voltage junction is common to both halves of the triac,
the stored charge can be neutralized c.nly by recombination.
At the instant the conducting half of the triac turns off, an
applied voltage opposite to the current polari:y is applied
across the triac terminals (point B)_ Because this voltage is a
forward bias to the second half of the triac, the sudden
reapplied voltage in conjunction with the remaining stored
charge in the high-voltage junction reduces the over-all device
Another important parameter for thyristors is the "critical

rate of rise of off-state voltage". A source voltage can be
suddenly applied to an SCR or a triac which is in the OFF
state through either closure of an ac line switch or transient
voltages as a result of an ac line disturbance. If the fast rate
of rise of the transient voltage exceeds the device rating, the
thyristor may switch from the OFF state to the conducting
state in the absenc of a gate signal. If the thyristor is
controlling alternatit
voltage, "false" turn-on (non-gated)
resulting from a tran mt imposed voltage is limited to no
more than half the applied voltage because turn-off occurs
during the zero current crossing. However, if the source
voltage suddenly applied to the OFF thyristor is a dc voltage,
the device may switch to the ON state and turn-off could
then be achieved only by circuit interruptions. The switching
from the OFF state is caused by the internal capacitance of
the thyristor. A steep-rising voltage dv/dt impressed across
the terminals of a thy! istor causes a capacitance-charging
current to flow through the device. This charging current
(i;Cdv/dt) is a function of the rate of rise of applied off-state
voltage. Il' the rate of rise of voltage exceeds a critical value,
the capacitance-charging current exceeds the gate trigger

current and causes device turn-on. Operation at elevated
junction temperatures reduces the thyristor ability to support a steep rising voltage dv!dt because less gate current is
required for turn-on. The effect of temperature on the
critical rate of rise of off-state voltage is shown in Fig. 14.
Vo ~ vORO .
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frequently encountered in thyristor applications. When an

RC snubber is added at the thyristor terminals, the rate of
rise of voltage at the terminals is a function of the load
impedance and the RC values used in the network. In some
applications, "false" (non-gated) turn-on for even a portion
of the applied voltage cannot be tolerated, and circuit
response to voltage transients must be determined. An
effective means of generating fast-rising transients and
observing the circuit response to such transients is shown in
Fig. J 5. This circuit makes use of the "splash" effects of a
mercury-wetted relay to transfer a capacitor charge to the
input terminals of a control circuit. This approach permits
generation of a transient of known magnitude whose rate of
rise of voltage can easily be displayed on an oscilloscope. For
a given load condition, the values in the RC snubber network
can be adjusted so that the transient voltage at the device
terminals is suppressed to a tolerable level. This approach
affords the circuit designer with meaningful information as
to how a control circuit will respond in a heavy transient
environment. The circuit is capable of generating transient
"'
32V
Fig. 14 - Critical rate of rise of off-state voltage as a function

of case temperature.
Voltage transients which occur in electrical systems as a result

of disturbance on the ac line caused by various sources such
as energizing transformers, load switching, solenoid closure,
contacto!"s, and the like may generate voltages which are
above the ratings of thyristors and result in spike voltages
exceeding the critical rate of rise of off-state voltage
capability. Thyristors, in general, switch from the OFF state
to the ON state whenever the breakover voltage of the
device is exceeded, and energy is then transferred to the
load. Good practice in the use of thyristors exposed to a
heavy transient environment is to provide some form of
transient suppression.
For applications in which low-energy, long-duration transients may be encountered, it is advisable to use thyristors
that have voltage ratings greater than the highest voltage
transient expected in the system to proVide protection
against destructive transients. The use of voltage clipping
cells is also effective. In either case, analysis of the circuit
application will reveal the extent to which suppression
should be employed. In an SCR application in which there is
a possibility of exceeding the reverse-blocking voltage rating,
it is advisable to add a clip cell or to use an SCR with a
higher reverse-blocking voltage rating to minimize power
dissipation in the reverse mode. Because triacs generally
switch to a low conducting state, if the di!dt buildup of the
principal current flow after turn-on is within device ratings it
is safe to assume that reliable operation will be achieved
under the specified conditions.
The use of an RC snubber is most effective in reducing the
effects of the high-energy short-duration transients more
b~
MERCURY
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OUTPUT
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10k
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voltages in excess of 10 kilovolts per microsecond, which

exceeds industrial generated transients. The response of a
100-millihenry solenoid control circuit exposed to a fastrising transient is shown in Fig. 16.
Use of Diacs For Control
Triggering
Basically, thryristors are current-dependent devices, and the

magnitude of gate current IGT and voltage VGT required to
trigger a thyristor into the on-state varies. The point at which
thyristor triggering occurs depends not only on the required
gate current and voltage, but also on the trigger source
impedance and voltage. Fig. 17 shows a family of curves
representing the gate-circuit load line between the opencircuit source voltage and the short-circuit current for
different time intervals. In a circuit which applies timedependent variable voltage Vac to a load and the gate trigger
current required to trigger the thyristor is derived from the
same source Vac, devices that have a gate current Igl are
HORIZONTAL"
0 IJLs/em.
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200 V/cm
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Fig. 17 - Thyristor
.'MI
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gate-circuit
RC SNUBBER R-'20.fl,
CoO 21'F
time
exJtibits a high-impedance blocking state up to a breakover

voltage V(BO), above which the device enters a negativeresistance region. The characteristic curve in Fig. 18 shows
rIBO,'
----
dV/dt
10 kV/fls
INPUT
load line for different
intervals.
PULSE
Fig. 16 - Waveforms showing response of a 100-millihenry

solenoid control circuit to a fast-rising transient.
triggered earlier in the ac cycle than devices that have a

higher gate trigger current Fig. 3. Although the circuit is
capable of providing variable power to the load, it is heavily
dependent on the gate current distribution, and results in
uncontrolled conduction angles for a given value of gate
series resistance. Furthermore, the circuit does not provide
the recommended gate-current overdrive for switching of the
fast-rising high-amplitude load currents present in resistive
loading. A more efficient circuit for control of variable
power to a load that eliminates the need for tight gatecurrent distribution uses a solid-state trigger device, called a
diac, which is voltage dependent.
The diac, often referred to as a bidirectional trigger diode, is
a two-terminal, three-layer, transistor-like structure that
---
---
--
IIBO'"
the negative characteristics associated with diacs when they

are exposed to voltages in excess of the breakover voltage
V(BO). Because of their bidirectional properties and breakover voltage level, diacs are useful in triac control circuits in
which variable power is to be supplied to a load. Because of
their negative characteristic slope, diacs can also be used with
capacitors to provide the fast-rising high-magnitude trigger
current pulses recommended in thyristor applications which
require efficient gate turn-on for the purpose of switching
high-level load currents.
In normal applications, diacs are used in conjunction with
RC phase networks to trigger triacs, as shown in Fig:19. The
RC phase network provides an initial phase-angle displacement</!so that conduction angles in excess of 90 degrees can
be realized. As the voltage on the capacitor begins to build
up in a sinusoidal manner, the breakover voltage V(BO) of
the diac is reached, the triac is turned on, and a portion of
the ac input voltage ;s provided to the load, as represented by
the angle a. As previously mentioned, the diac offers a
negative-resistance region and is capable of providing current
pulses whose magnitude and pulse width are a function of
the capacitor C and the combined impedance of the diac and
the gate and main terminal ot' the triac. When the voltage on
the capacitor C reaches the breakover voltage V(BO) , the
capacitor does not discharge completely, but is restricted to
some finite level as a result of the diac negative-impedance
characteristic at high values of pulse current. Fig. 20 shows
the peak pulse current of a diac as a function of the
capacitances of the phasing capacitor C.
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circuit are not critical because the SCR has a half-cycle of

applied negative voltage in which to recover. The SCR
provides a reliable, highly efficient, long-life control for
half-wave control circuits.
Fig. 22 shows a full-wave bridge that feeds a resistive load
and uses an SCR as the control element for load current.
Power control is accomplished by SCR turn-on at various
conduction angles with respect to the applied voltage. The
criteria for turn-off in this circuit is important because the
SCR must recover its forward-blocking state during the time
that the forward current stops flowing. Although this time
interval may appear to be very small, close analysis of the
voltage wave during the transition time in which the
full-wave bridge reverses direction reveals that substantial
time exists for turn-off.
0.2
Fig.20 - Peak pulse current of a diac as a function of phasing

capacitance.
In the control of ac power by means of semiconductor

devices, emphasis has been placed on circuit simplicity, low
cost, and small over-all package size. Thyristors meet these
goals, and are also capable of providing either fixed or
adjustable power to the load. Fixed power is achieved by use
of the thyristor as an ON-OFF switch, and adjustable power
through the use of an RC phase network which provides
variable phase-gating operation. The following section discusses both SCR and triac circuit operations, and analysis of
SCR and triac behavior for various circuit conditions.
Many
fractional-horsepower
motors are series-wound
"universal" motors capable of operation from either an ac or
a dc source. In the early stages of thyristor control, SCR's
found wide acceptance in the control of universal motors,
particularly in the portable power tools market. SCR's are
capable of providing speed control over half of an ac sine
wave, and, if full power is required, a simple shorting switch
across the SCR provides the necessary function; such a
switch is shown in Fig. 21. Turn-off parameters for this
Fig. 23 shows one-half of the bridge during the time that the
forward current is approaching zero current. Two diodes are
in series with the SCR; it is generally accepted that a diode
Fig.23 - Half of bridge circuit of Fig. 22 when forward

current approaches zero for a resistive load.
voltage of approximately 0.6 volt is required to maintain

each diode in conduction. If it is further assumed that a
voltage of approximately 0.6 volt is required across the SCR
to maintain conduction, the sum of the voltage drops over
the circuit requires 1.8 volts; below this value, the SCR drops
out of conduction. As the bridge reverses current direction,
the same analysis holds true, i.e., forward conduction current
is not resumed until the sum of the voltage drops exceeds 1.8
volts.
The waveform during the interval that the voltage wave goes
from 1.8 vofts to zero can be analyzed by reference to Fig.
24. A half-cycle (180 degrees) of conduction requires 8.3
milliseconds, one degree being equal to approximately 46
microseconds. Because a sine wave is linear for very small
angles, a graph can be constructed to show the time interval
during which the voltage is less than 1.8 volts for various
magnitudes of applied voltage. Analysis of the voltage wave
for an angle of one degree shows that an input voltage of 120
volts rms results in a voltage equal to 2.9 volts, which decays
to zero in 46 microseconds.
Because the SCR is
non-conducting below a circuit threshold of 1.8 volts, a time
of 28.5 microseconds then elapses while the voltage decays
from 1.8 volts to zero. An equal time is required for the
bridge to build up to the threshold voltage of 1.8 volts.
Therefore, a total exposure time of 57 microseconds elapses
in which the SCR is allowed to regain its forward-blocking
state.
times for SCR's are industry-standardized to include peak

forward current, rate of rise of reverse current, peak forward
blocking voltage applied, and rate of rise of applied blocking
voltage. The presence of the applied reverse current helps to
shorten turn-off times because the reverse current sweeps out
the charge in the blocking junction. For SCR operation from
a full-wave bridge in which there is no appreciable reverse
voltage available, turn-off is accomplished through recombination, and the effects of circuit loading on SCR operation
must be clearly evaluated.
FuJi-wave ac switching can also be performed by use of two
SCR's in an inverse parallel mode, often referred to as a
"back-to-back" SCR pair, as shown in Fig. 25. This circuit
can be used as a simple static switch or as a variable phase
control circuit. It does not make use of a full-wave diode
bridge, but simply uses the SCR's in an alternating mode.
The circuit has the disadvantage of separate trigger logic, but
possesses an inherent advantage in higher-frequency applications because advantage can be taken of the periods of the
alternating voltage in which either device may recover to its
blocking state. During the half-cycle of the applied voltage
that SCR-I is conducting, SCR-2 is reverse-biased and can
recover its blocking state. Because of the applied reverse
voltage and associated time of the half-cycle voltage, turn-off
times are not critical.
As shown in Fig. 24, increasing the magnitude of the applied

voltage source to 240 volts rms cuts in half the time interval
which the SCR is allowed for turn-off. Further increases in
input voltage magnitude result in shorter turn-off periods.
LlJ
2.9V
l.av
Fig.25 - Full-wave ac switching

back" SCR pair.
circuits
using a "back-to-
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Fig.24 - Waveform 0': circuit in Fig. 22 as voltage wave goes

from 1.8 volts to zero.
This analysis gives a clear, well-defined picture of the turn-off

time available for a resistive load. However, for reactive
loads, such as fractional-horsepower motors, the turn-off
conditions, including turn-off time and dv/dt stress, are more
difficult to define because they are affected by a number of
variables, including the back EMF of the motor, the ratio of
inductance to resistance, the motor loading, and the phase
angle of motor current to source voltage. Normally, turn-off
This two-SCR circuit is often favored over a triac circuit,

even though separate trigger sources are required, because it
is supposed to have better commutating capability. Fig. 26
shows the waveforms of com mutating dv/dt for the SCR
circuit. If the load is inductive with lagging current power
factor, the conducting SCR commutates at the time the
principal current reaches zero crossover (point A) and reverts
to the blocking state; a reapplied voltage of opposite polarity
equal to the source voltage then appears across the nonconducting SCR. Because this voltage is a forward-bias
voltage to the non-conducting SCR, device turn-on can occur
if the rate of rise of applied forward voltage exceeds the
device rating for critical rate of rise of off-state voltage. For
inductive loading in an inverse-parallel-mode SCR application, power control to the load can be lost if the rate of rise
of applied voltage is exceeded.
Fig. 27 shows the basic triac-diac light-dimmer control circuit

with the triac connected in series with the load. During the
beginning of each half-cycle, the triac is in the off-state and
the entire line voltage is across the triac; therefore, no
voltage appears across the load. (Actually, there is some
voltage across the load as a result of triac leakage currents,
which are a function of applied voltage and junction temperature. However, these leakage currents are relatively small, at
most in the milliampere range, and the resulting load voltages
are generally ignored.)
'--,,
The RC charge-control circuit is in parallel with the control

triac, and the applied voltage serves to charge the timing
capacitor C through the variable resistor R. When the voltage
across C reaches the breakover voltage V(RO) of the diac, the
capacitor discharges through the diac and the gate-to-mainterminal-I impedance of the triac and turns on the control
triac. At this point, the line voltage is transferred to the load
for the remainder of the applied half-cycle voltage. As the
load current reverses direction (zero crossing), the triac turns
off and reverts to the blocking state. This sequence of events
is repeated for every following half-cycle of applied voltage.
Fig.26 - Waveforms of commutating
dv/dt for SCR circuit of
Fig. 25.
Although it may appear that the rate of rise is extremely fast,

closer circuit evaluation reveals that the dv/dt stress is
restricted to some finite value which is a function of the load
reactance L and the device capacitance C. Therefore, it is
important that the rate of rise of applied voltage during
commutation not exceed the device specification for critical
rate of rise of off-state voltage under worst-case condition or
unreliable operation may result. It is generally good practice
in inverse-parallel operation to use an RC snubber network
across the SCR pair to limit the late of rise to some finite
value below the minimum requirements, not only to limit the
voltage rise during commutation, but also to suppress
transient voltage that may occur as a result of ac line
disturbances.
As previously mentioned, the use of semiconductor devices
for ac power control has emphasized circuit simplicity, low
cost, and small over-all package size. The development of the
bidirectional triode thyristor, referred to as a triac, achieved
all of these goals. Triacs can perform the same functions as
two SCR's for full-wave operation, and also simplify gate
logic requirements for triggering.
A simple, inexpensive triac circuit that can provide variable
power to a load over a full cycle' of applied voltage is the
light-dimmer circuit. This circuit contains a diac, a triac, and
an RC phase-control network. The basic lightdimmer circuit
is described below because it provides a good example of
triac behavior as related to load reqUirements and of the
operation of a diac in an RC phase-control circuit.
If the value of resistance R is decreased, the capacitor charges

to the breakover voltage V(RO) of the diac earlier in the ac
cycle; the power supplied to the load is then increased and
the lamp intensity is effectively increased. If the value of
resistance R is increased, triac triggering occurs later in the ac
cycle and applied voltage to the load is reduced; the result is
uecreased lamp intensity. Therefore, changes in the resistance
value R effectively apply variable power to a load (which is a
lamp load in the circuit of Fig. 27, but could also be a motor
load or heating element).
Although the load is arbitrarily placed in series with main
terminal 2, the circuit performs equally as well if the load is
shifted to main terminal I. (Actually, any commercial lamp
dimmer available has two wires brought out for external
connection, and the chance that the load will be connected
to main terminal I is 50 per cent.) The only requirements for
reliable operation are that the RC phase network be in
parallel with the triac and that capacitor-discharge loop
currents be directed from the diac to the triac gate and main
terminal I. Although the basic light-control circuit operates
with the component arrangement shown in Fig. 27, additional components are often added to reduce hysteresis
effects, extend the effective range of power control, and
suppress radio-frequency interference.
Hysteresis in triac phase.control circuits is referred to as the
ratio of applied load voltage when the triac initially turns on
(as control potentiometer is slowly reduced from some high
value) to the value of load voltage prior to "extinguishing"
(as the control potentiometer is slowly increased to some
higher value). If the circuit has high hysteresis, the control
potentiometer travel may be as high as 25 per cent before
triac turn-on occurs, after which the control potentiometer
may be turned back 15 per cent before the triac "extinguishes". Hysteresis is an undesirable feature if the circuit
application requires low-level lamp illumination because a
momemtary drop in line voltage may result in the triac
"extinguishing" or missing one half-cycle of applied voltage
when the capacitor voltage is barely equal to the breakover
voltage V(BO) of the diac. If this condition exists, the
control potentiometer must be reduced to "start up" the
triac again.
Hysteresis is a result of the capacitor discharging through the
diac and not recovering the original voltage prior to
triggering. Fig. 28 shows the waveforms of the charging
'
2na
to reduce the effective diac negative resistance and minimize

the change in capacitor voltage. However, this change reduces
the gate current pulse and, if not carefully controlled, may
result in di/dt failures because the triac switches highmagnitude current under minimum gate drive.
A more effective method of reducing hysteresis is to use a
second RC time constant, or a "double-time-constant"
circuit such as that shown in Fig. 29. As C2 supplies the
charging voltage for the diac breakover voltage V(BO), the

abrupt change is capacitor voltage during diac turn-on is
partially restored by capacitor CJ , as shown in Fig. 30. The
restoring of the charge on C2 maintains the original triggering
point very closely and results in extended range of the
control setting. This triac circuit can be turned on for very
low levels of applied voltage and is not prone to "extinguishing" for line-voltage drops.
[THEORET1CAL)
GATE TRIGGER
POINT
Fig.28 - Charging cycle of capacitor-diac network in Fig. 27

(high hysteresis).
" (THEORE
2,.TICAL)
GATE TRIGGER
POINT
capacitor C as related to the applied line voltage_ The initial

displacement angle is a result of the phase angle due to the
value of the RC components used. As the value of the
control potentiometer
is slowly reduced, the value of
charging voltage reaches the breakover voltage V(BO) of the
diac, and the triac allows that portion of the ac wave
remaining to appear at the load, as represented by the shaded
area at the first trigger point. At this point, there is an abrupt
change in capacitor voltage (A V):Therefore, as the capacitor
charge reverses direction, the second trigger point is reached
much earlier in the next half-cycle, and that portion of the ac
wave remaining appears across the load, as represented by the
shaded area at the second trigger point. The second trigger
point and subsequent trigger points represent the steadystate
level at which triggering occurs. Some reduction in hysteresis
can be realized by inserting a resistor in series with the diac
Fig.30 - Charging cycle of capacitor-diac network in Fig. 29

(reduced hysteresis).
Because triac switching from the high-impedance to the

low-impedance state can occur in less than one microsecond,
the current applied to the load increases from essentially zero
to a magnitude limited by the load impedance within the
triac switching time. This rapid rise of load current produces
radio-frequency interference (RF!) extending into the range
of several megahertz. Although this rapid rise does not affect
television and FM radio frequencies, it does affect the
short-wave and AM radio bands. The level of RFl generated
is well below that caused by small ac/dc brush-type motors,
but some means of RFI suppression is generally required if
the triac phasecontrol

period
of time
cannot
be tolerated.
circuit
is to be used for any extended
in an environment
in which
load
RFI generation
by
turning
zero-voltage
current,
the
control
circuits
circuit
trol of thyristor
the
current
capacitor is used in parallel

highfrequency
signals.
rate
of
rise,
with the entire
and
network
a filter
to bypass
RCACA3059
This
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Note
in reducing
RFI
noise for rms load currents up to 6 amperes to such an extent

that the effects on shortwave
and AM signals are either
minimized
or
amperes
of
rms,
dual
considered
additional
chokes
Depending
on
suppression
mayor
triac control
in
tolerable.
suppression
the
the
For
ac
circuit
lines
values
above
can be achieved
to
the
performance
may not be effective
has reviewed
triac
by use
network.
required,
and other
such
means of
of power
package
controls
is through
integralcycle
ing.
This
through
method
of
controlled
highcurrent
use of a proportional
synchronous
approach
providing
varies
bursts
switching
the
control
heating
circuit
or zerovoltage
average
of full cycles
phase
The
integrated
generator
for con
transition.
one of which
is a fail-safe
pulses
in the event
from
power
10
using
switch
the
of ac voltage
load
to the
thyristors
that
the
the viewpoints
of
assembly
the saturation
circuit
application.
being
felt
in
than
normal
lamp
dimming,
ignition,
comfort
display
radar,
controls,
applications
boards,
sonar,
commulating
support
advantages
RCA
capability
answer
to
thyristor.
offered
most
new doors
deflection
and igniters
and emergency
systems,
for fuelfired
standby
which
generating
doors
preViously
in solidstate
powercontrol
home
design.
furnaces.
lamp
or replacement,
characterized
the
is
as
electric
motors,
in thyristor
fully
opens
for
such
applications,
protection
acceptance
triacs
tube
from
environments
TV
relay
or
far
applications
for multiplehorsepower
widespread
applications
are
of thyristor
automotive
inverters,
of
electromechanical
everyday
marine
engineers
low cost, and
improvements
impact
residential
Industrial
simplicity,
level, but are opening
The
appliances,
heating,
gives design
circuit
Technological
now finding
may be required.
alternate
with
are minimized.
the zerovoltage
thyristors
in achieving
freedom
introduction
An
the
zero
or shorted.
greater
reaching
in Fig. 31 are effective
associated
is a monolithic
features,
output
TIle availability
small
shown
switch
during
is opened
counterparts.
The values
steps
of
on near
temperature
and voltage conditions,
gate trigger character
istics, and effects of SCR's and triacs on circuit performance.
CONTROL
100
beginning
turns
as a triggercurrent
inhibits
sensor
the
RFI generated
turnon
has many
which
at
the triac
Conclusions
This
e!GHT
primarily
circuit
external
the
zerovoltage
used
circuit
triac
current
and
circuit
restrict
the
Because
sudden
A reasonably
effective suppression
technique
is shown in Fig.
31. An inductor
is connected
in series with the triac control
to
on
crossing.
systems
controls.
for 400Hz
to many
were
devoid
It appears
applications
are
The
may
aircraft
of the
that
the
be
the
OOa3LJ1]
Thyristors
Application Note
Solid State
Division
AN-4537
Thyristor Control of Incandescent

Traffic-Signal Lamps
This Note discusses the use of thyristors in the control of

traffic signals. The thyristor most applicable to this
application is the triac, which can carry the electrical power
required for incandescent traffic-light bulbs, yet can be gated
by the low-power signals from electronic control timers or
monitoring computers. In addition, the triac is able to handle
the large transient currents that result from cold ftIament
turn-on (inrush) and ftIament rupture (flashover). Triac
operation, stresses on triacs in operation with incandescent
lamps, and a number of triac circuits for control of
incandescent lamps in traffic signal applications are discussed
below.
t;
0HSTATE
TRIAC OPERATION
A triac, shown schematically in Fig. I(a), is a bidirectional triode thyristor. In the absence of a gate signal, the
triac blocks both portions of an ac sine wave, but a
steady-state or pulsed gate signal will switch it on as in Fig.
I(b). The gate signal can be either positive or negative with
respect to main terminal no. I (MTl), while MT2 can also be
either positive or negative referenced to MTl; the four possible modes of switching are depicted in Table I. For example,
when a triac is triggered by connecting a resistor between
MT2 and the gate, as shown in Fig. 2, the triac operates in
the 1+ and III- modes in energizing the ac load. Other
thyristor characteristics will be introduced below as needed,
while an extensive review of thyristors is available in RCA
Application Note AN-4242, "A Review of Thyristor Characteristics and Applications".
SURGE CURRENT THROUGH
INCANDESCENT-BULB
TRIACS IN
OPERATION
The traffic-control circuit designer must be aware of two

characteristics of incandescent bulbs: end-of-life fIlament
rupture and cold-filament inrush surge. Both these transient
conditions impose a high surge stress on the controlling triac,
which without proper circuit design can be destructive.
Flashover
Flashover is a short-duration, extremely high-current
surge through the triac that is initiated when a lamp filament
HOLDING
CURRENT
------,._-
-H::::;-CURRENT
ON STATE
QUADRANTm
MAIN TERMINAL 2 NEGATIVE
Fig. 1-
(a) Schematic svmbol. and (b) principal

current characteristic for a triac.
MODE
MT2
1+
1-
111+
voltage-
111-
ruptures. The rupture is most likely to occur as a result of a

termination in bulb life; however it can be caused by a
mechanical shock. The mechanism of flashover is initiated by
be depended upon to protect the triac. Fusing of triac

circuits is described in more detail in the following discussion
of inrush current.
Inrush
the gap formed when rupturing occurs. The instantaneous

value of line voltage across the break sets up an electric field
that ionizes the gases in close proximity to the gap. The
ionized gases, usually argon and nitrogen, provide an
electrical conduction path across the gap, and the resulting
current heats and ionizes more gases until an arc is formed
across the filament lead-in wires. The arc is maintained as
long as the regenerative heating and ionization continue.
Finally, because of either increasing arc length or decreasing
ac line voltage, or both, the electric field becomes too weak
to sustain the a,'c, and the arc is extinguished.
Fig. 3 shows a flashover current pulse. Its magnitude and
duration depend on many factors. The actual peak magnitude of the source voltage, the voltage phase at the instant of
filament rupture, and the impedance of the lead wires and
other circuitry (including RFI filters) all affect the duration
and magnitude of the surge. Typical values can be given for
the stress of flashover at a load center point. For bulbs of less
than 75 watts the duration of the surge can be typically less
than 2 milliseconds. For bulbs of 100 to 150 watts the duration of the surge can be typically less than 4 milliseconds. The
magnitude of surge can vary considerably, with typical peak
values ranging from 80 to 200 am peres when the flashover
occurs near the maximum voltage point. If the flashover
occurs at a zero-voltage crossing, the current surge may be
reduced as a result of the dependence of the magnitude on the
voltage phase at rupture.
Because of the short duration of the flashover current, it
is usually difficult to provide circuit fuse protection against
flashover. Most incandescent bulbs are provided with a fuse
built into one of the lead-in wires. This built-in fuse is not
100-per-cent effective against flashover and therefore cannot
In tungsten-filament lamps, the cold filament resistance is

approximately 1/18 to 1/12 of the hot mament resistance.
The actual currents in a circuit under inrush and steady-state
conditions do not vary in these ratios, however, because of
the inductance and external limiting resistance of the
circuitry, including the lead-in wires to the bulb. Furthermore, it is obvious that the highest inrush current will occur
at the peak of the voltage sine wave in a lamp load circuit. If
switching occurs at any other phase of the voltage sine wave,
the peak current through the bulb is less than "worst case".
Typically, the maximum inrush peak current can be ten times
as great as the steady-state peak current, while the peak inrush
current with zero-voltage switching can be approximately five
times as great as the steady-state peak current, as shown in
Fig. 4. Thus zero-voltage switching of a lamp effects a soft
turn-on that reduces the initial peak of inrush current by half
and greatly increases bulb life. This increase of bulb life by
zero-voltage switching has been verified by test results; an
increase in life of approximately ten times, with a 90 per cent
confidence level, has been reported. Thus maintenance costs
are reduced and system reliability increased.
Fig. 4 shows how the current in a lamp circuit decreases
to the steady-state value. The rate of decrease depends upon
the thermal time constant of the tunsten filament. A
~:,"'
2T03TlMES
Ipk STEADY
STATE
.....100 ms
/
L
2 TO :3 TIMES
Ipk STEADY STATE
.....100 ms
Fig. 4-
(a) Inrush current at peak voltage point,

(b) inrush current at zero-voltage point.
and
AN,4-537.
.__ ...
.. __.
... _.._._...
~_._
a bulb is exposed to its most severe normal operating stress

during inrush, the weakest spot of the fIlament often
ruptures and causes a flashover at turn-on. Most often,
switching and flashover occur at some point other than the
peak voltage; therefore the resulting peak current is usually
within the handling capability of the triac.
Fuses in incandescent-lamp circuits must not blow under
the stress of inrush current, yet must blow under flashover
current. For lowpower bulbs the flashover current is
substantially greater than the peak inrush current, and fuse
protection is simple. For example, a 100-watt bulb might
have a typical flashover current of 100 to 200 amperes and a
typical inrush current of 10 amperes. For large-wattage
bulbs, however, fusing is difficult. For a 1000-watt bulb, the
peak flashover current might still be between 100 and 200
amperes, while the peak inrush current is approximately 120
amperes. Fuses set to blow at 150 amperes peak flashover
current of short duration may also blow under the
long-duration, slightly-lower-amplitude stress of inrush. As a
result, a fusing solution to the problem of triac protection
would be marginally reliable. One solution is to use a
40-ampere triac (available in the RCA-2N5443 series), which
has a single-cycle surge capability of 300 amperes, to control
this 10-ampere load. Here again system reliability would be
improved and maintenance costs reduced.
CIRCUITS
With the closelyrelated transient stresses imposed on a
triac by an incandescent-Iightbulb circuit having been noted,
a number of circuits that help to reduce these stresses on the
triac and increase lifetime of the bulb are discussed below.
Zero-Voltage Switching with an IC
An RCA-CA3059 integrated circuit (IC) can be used with
a triac to accomplish zero-voltage switching of a load. A
functional block diagram of this IC is shown in Fig. 5. The
CA3059 is a monolithic, multistage, integrated circuit that
incorporates
a diode limiter, a threshold detector, a
differential amplifier, a Darlington output driver, and other
features. A more extensive description of this IC is given in
RCA Application Note ICAN-6l82, "Features and Applications of RCA Integrated-Circuit ZeroVoltage Switches." The
CA3059-and-triac circuit for zero-voltage switching is shown
in Fig. 6. When QI is off, the IC does not generate pulses to
the gate of the triac. When QI is biased on, the IC generates
gating pulses of approximately 40 milliamperes for 100
microseconds that straddle the zero-voltage crossing points.
These pulses trigger the triac on in the 1+ and III+ modes at
the zero-voltage crossing for the resistive-tungsten-mament
bulb and effect the desired result of decreasing inrush
current.
Fig. 5-
Functional block diagram of the RCA-CA3059

integrated-circuit zero voltage switch.
The circuit shown in Fig. 6 has one disadvantage for

traffic controls, in which the bulb load is usually grounded
and the power circuit ground and the logic ground are
common. This arrangement presents a severe problem of
int~rfacing between logic and power circuitry. If the load in
Fig. 6 were grounded, terminal No.4 of the CA3059 would
be at line voltage above ground and the substrate (terminal
No.7) at ground potential when the bulb was energized. As a
result, the IC would be destroyed. Similar problems are
encountered whenever the logic circuitry is directly coupled
with the triac power circuit and the load is grounded.
However, this problem is eliminated in the discretecomponent circuits described below.
Discrete-Component Zero-Voltage Switching
A discrete-eomponent circuit that accomplishes zerovoltage switching of a grounded tungsten mament load is
120 VAC
60Hz
j
Circuit that uses the CA3059 and a triac to switch
a lamp at zero voltage.
shown in Fig. 7. With Q lon, T1 is on and source voltage is

shunted away from the load. With QI biased off, T1 is off
and T2 is gated on through RI and RJ. When T2 conducts, it
connects R4 from gate to MT2 of T3, and thus triggers T3 on
in the 1+ and III- modes. Because T2 is a sensitive-gate device,
it turns on close to the zero-voltage point; therefore, the load
is also zero-voltage switched after the initial turnon. For a
typical T2300B device, triggering in the 1+ and Ill modes
results in firing at about 7 volts peak on the line. After T3 is
turned on, the triggering circuitry is shorted; therefore, no
triggering power is dissipated while the lamp is on.
Filament Pre-Heating
Another approach to reducing the inrush current is
shown in Fig. 8, where a fllament pre-heater function is
included in the switching arrangement. In this circuit, when
QI is off the logic interfacing triac T1 is off. R3, which can
be a fixed resistor of approximately 98 kilohms, is set so that
T2 is fired for only a small portion of the voltage cycle. This
Fig. 7-
Discrete-component
circuit
used
grounded load at zero voltage.
to
switch
C2
0.068
firing is accomplished by the standard double-time-constant

lamp-dimmer gate circuitry of T2. The low-conduction-ohase
firing of the bulb keeps the tungsten fllament warm but not
hot enough to radiate any readily visible light. When QI is
turned on, T1 is gated on and R3 is shorted, and the lamp
load turns on.
The associated waveforms are shown in Fig. 9. For a
200-watt bulb in the circuit of Fig. 8, the first peak of
current through the bulb was 7.5 amperes when the warm up
circuit was used and 25 amperes with cold-fllament inrush.
These circuits of Figs. 7 and 8 show that triacs can be
used to switch power lamp loads and also interface with
low-level logic systems. They also show how some of the
stresses involved with the switching of incandescent lamps
can be reduced. Other switching circuitry for use in traffic
controls is discussed below.
OTHER APPLICABLE
ON.QFF SWITCHING
CIRCUITS
Two other circuits that can be used in the traffic control

area are shown in Figs. 10 and 12. These circuits have the
advantages of a common ground between logic and power
circuitry, grounded bulbs, and isolation between the dc logic
and the power circuitry afforded by use of the interfacing
logic triacs.
In the positive-logic switching circuit of Fig. 10, logic
triac T I is used to interface between the low level logic and
the load triac T2. With T1 gated on, C I is charged through
RI to the breakover voltage of the diac, at which point T2
and the load are triggered on. The various circuit waveforms
are shown in Fig. II. As Fig. II(d) shows, there is
continuous gate power driving T2 wheneve: T I is on and
thus the light is on hard.
A variation of this circuit with opposite (negative) logic is
shown in Fig. 12. In this circuit, when T1 is triggered on, T2
and the lamp are off. When T1 is off, CI can charge through
RI and R2 to diac breakover, which discharges CI into the
gate of T2 and energizes the load. The waveforms of this
circuit are shown in Fig. 13. Little gate power is dissipated in
this circuit because T2 shorts across its gate circuitry when it
is on.
jJ.F
+5V
Fig. 8-
t\
-11--.e"'9
7,
2N5755
A circuit
ment.
including
a filament
pre-heat arrange-
Fig. 9-
Waveforms for circuit in Fig. 8: (a) voltage on bulb

when 01 is off; (b) voltage on bulb when 01 is on.
L
120
AC
f
Igt=25
mA
VT,
Ig, O~---~
T'ME
(0)
'n
'" 'I
TIME
(01
C\ 1\
,I
" 1
VT201C\'20V ~
V
VLol~_C\'20v
-32V-M
VCO~_32V_c=J
i
~~IC\VLJ
C\
",I
;J
TIME
TIME
(0)
(e)
(d)
(b)
CJ
C
r
,,1
1'\
~
TI~~
TIME
(.)
(.)
Fig. 13- Waveforms for negative-logic switching.
Both of these circuits are shown with continuous gate

drive into triac TI. Logic power could be conserved by use of
pulse drive, with no change of power stage operation;
however, the logic circuitry would be more complex.
THYRISTOR
FLASHER
Thyristors can also be used to advantage in flasher-type

traffic-control systems. In these applications, two lights are
usually flashed on and off as a warning display. Fig. 14 shows
a thyristor circuit that accomplishes this flashing function.
As shown, a silicon-controlled-rectifier (SCR) multivibrator
functions as the timer and flasher-triggering driver. The drive
to the control triac is de and is alternated between Tl and T2

according to the timing set in the multivibrator. A waveform
for the component values shown is displayed in Fig. 15. The
timing can be modified by selecting different values for any
of the following components: RI, R2, R3, R4, CI, C2. The
important features of this circuit are the simple, rugged de
power supply used and the use of SCR's as both timing and
memory devices to trigger the triacs. Alternative approaches
to the traffic control flasher are given in ICAN-6l82, "Features
and Applications of RCA Integrated-Circuit Zero-Voltage
Switches_"
100
lo}
~
8b
Bb:::::8czO.30
SEC.
120VAC
j ~"
RELAY
R~
CIRCUIT
AC - DC ISOLATION
In the circuits shown thus far, either a triac or an IC is

used to interface between the dc logic and the ac power
circuitry. A number of other methods can be used to isolate
these stages in a traffic controller. The circuit of Fig. 16
illustrates the use of a reed-type relay. When the relay is
activated, the triac is gated in its 1+ and III- modes and little
power is dissipated in the gate circuit. Fig. 17 shows the use
of a light source and photocell combination. Because the
photocell is part of a single-time-constant circuit, it must
have enough dark resistance to keep the voltage across C I
below 32 volts so that the diac does not switch and discharge
the capacitor into the gate of the triac at all times. A pulse
transformer can also be used for isolation, as shown in Fig. 18.
A 5-kHz signal into the gate turns the triac on at initiation of
the pulsing and keeps it on until the oscillator is stopped.
Fig. 16- (a) Circuit,

control.
_~_\:~_.LL-
TIME
and (b) waveforms of reed-relay gate
RFI SUPPRESSION
Radio-frequency interference (RFI) that can result from

the fast triac SWitching of high power loads must be
considered in traffic control circuits. When an ac load is
switched on, as shown in Fig. 19, RFI is generated in the
initial wavefront. This steep wavefront contains many
harmonics that can be sustained by the circuit Q.
One method of reducing RFI is zero-voltage switching

with resistive loads; thus, the circuits above that utilize the
RCA-CA3059 IC inherently include RFI suppression. Circuits that do not use zero-voltage switching require external
filters for RFI suppression. A typical filter used in
conjunction with ac loads is portrayed in Fig. 20. The effect
~O~~_~
__
"TIME
r:c"
120 V AC
I
120VAC
LOGIC
CIRCUIT
RFI
FILTER
r-----j
I
I
I
IOO/l-H
I
I
I
OI~F
I
I
I
I
--I
Thyristors
Application Note
ffilCTI3LJD
Solid State
Division
AN-4745
Analysis and Design of Snubber

Networks for dv/dt Suppression
in Thyristor Circuits
When a triac is used to control an inductive load, voltages

with high rates of change (dv/dt) can be generated that can
cause a non-gated turn-on of the triac. This false turn-on can
occur if the dv/dt exceeds the critical rate of rise of commutation voltage of the triac, or if voltage ringing occurs that
exceeds the blocking capability of the triac (VOROM)' The
false triggering caused by these mechanisms resul ts in a loss
of control of power to the load; to assure reliable operation,
therefore, it is necessary to provide means to suppress this
dv/dt stress as it is commonly called. The simplest method of
dv/dt suppression is the use of a series RC network across the
main terminals of the triac. The design of this network,
commonly called a snubber network, must take into account
the peak voltage that can be allowed in the circuit, and the
maximum dv/dt stress that the device can withstand. This
Note analyzes the RC network design and presents graphs
that allow a designer to select a snubber to fulfill his
requirements.
Commutating dv/dt And False Turn-On
Fig. I shows a control triac in a typical connection with
an ac power source and a load. The triac is a regenerative
device; once it has been turned on, it continues to conduct
until the principal current drops below a value that just
supports the regeneration. This current level is called the
holding current of the device. If the gate signal is removed
before the principal current decreases below the holding
current, the device turns off and regains its blocking
capability.
Fig. 2 shows the triac principal voltage and current

waveforms when the load is resistive. If the gate signal is
removed at time to' the device continues to conduct until the
current attempts to reverse polarity. The device then
undergoes a reverse recovery period, and thereafter must
support a main terminal voltage of the reverse polarity that is
equal to the source voltage. The rate of reapplication of this
off-state voltage for a resistive load and a l20-volt 60-Hz
source is typically 0.064 volt per microsecond if the stray
inductance due to wiring is minimal. This rate of reapplication generally does not cause turn-on of the device.
TRIAC
PRINCIPAL
CURRENT
TRIAC
PRINCIPAL
VOLTAGE
Fig. 2-
Principal voltage and current for a triac in operation

with a resistive load.
Fig. 1-
Series connection
of a triac, an inductive
an ac power source.
load, and
In a circuit with an inductive load the voltage leads the

current by some phase angle <P as shown in Fig. 3. After the
triac turns off it must block the reapplied instantaneous line
voltage of the reverse polarity. Because the triac goes from
the conducting state to the blocking state in a very short
time, this voltage is reapplied very rapidly. The turn-off of
the triac causes a rapid decay of current through the
inductance, and thus produces an Ldi/dt voltage. This rapidly
capability (VOROM) of the device. Malfunction of the device

is then caused by the inability of the triac to block the
voltage even though it can withstand the dv/dt stress. An
example of voltage ringing is shown in Fig. 7(a). Fig. 7(b)
shows the same voltage on an expanded time scale.
SOURCE
VOLTAGE/
TRIAC
PRINCIPAL
CURRENT
,-
TRIAC
PRINCIPAL
TRIAC
PRINCIPAL
VOLTAGE
CURRENT
Fig. 3- Principal voltage and current for a triac in operation

with an inductive load.
rising off-state voltage stress is impressed across the main
terminals of the device and can cause it to turn on. Fig. 4
illustrates this false turn-on.
A triac analog that uses two silicon controlled rectifiers
(SCR's) provides a simple understanding of how this dv/dt
causes the device to turn on. The inverse parallel SCR analog
of the triac is ,~own in Fig. 5(a), and a twotransistor analog
of the SCR is shown in Fig. 5(b). At the end of the half cycle
of on-state current conduction, some charge remains in the
bases of the equivalent transistors that comprise the conducting SCR. Upon application of the opposite-quadrant off-state
voltage, this charge flows as a recovery current. Part of this
current flows through the equivalent transistor emitter of the
adjacent SCR. In addition, some charge may already exist in
the bases of the blocking SCR because of lateral transport of
carriers from the previously conducting side. Finally, a
capacitive displacement current flows to the reverse-biased
middle junction of the blocking SCR; this displacement
current, lOIS, can be described by the following equation:
Fig. 4- Principal voltage and current curves showing triac

malfunction that results from commutating dv/dt
produced bV inductive load.
CATHODE
dV
IDIS = CM
dt
dCM
ctt
+ V
where CM is the capacitance of the reversebiased junction

and V is the voltage across that junction.
If the total of the three currents is sufficient to cause the
sum of the transistor gains to become unity, the device
switches on. The use of the shorted-emitter construction by
RCA shunts some of the current away and thus permits a
higher dv/dt stress to be placed across the device, but does
not eliminate the current completely. The first two current
flows are functions of device design and construction, but
the displacement current flow can be controlled by use of an
RC snubber network that limits the rate of reapplication of
off-state voltage.
The snubber network, illustrated in Fig. 6, consists of a
resistance RS and a capacitance Cs placed in series across the
main terminals of the device. For some snubber component
values and some types of load, excessive ringing can occur in
the circuit; this voltage ringing can exceed the blocking
Fig. 5- (al TwoSCR representation of a triac; (bl two

transistor model of an SCR, with junction capacitance shown.
Fig.6-
Triac circuit using a snubber network of RS and Cs

connected across the triac.
Condition
112: (RL
+ RS)2
-IVMI
qc(t)
(WI + + 0)
= ~cos
+ cext
[(I
= 4L!C
+ ext) qd + idt]
250
Condition
1l13: (RL
> 4L!C
+ RS)2
-IVMI
qc(t)
--1 1-
20/",
(o)
= ~cos
cext
T[
+ + 0)
(wt
(exqd
+ idt) sinh Ii'l
+ Ii 'qd
cosh Ii 't
...L
50V
dv
V2 - VI
dt~
= tan']
(w L!RL)
0= -tan -I [(WL-....!-C
)!(RL
+ RS)]
w S
RL + RS
Ii, _~(RL
---
+ RS~2
2L
Fig. 7-
(a)
Ringing,
principal
caused by
voltage of
inductive
triac;
load,
in
(b) principal
the
voltage
_1 __ f.RL
shown on an expanded scale.
LCS
Basic Circuit Analysis
The suppression
network
dv!dt
8 shows
an equivalent
triac has been

switch,
driven
by
be designed
circuit
can
state,
is a standard
source.
be obtained
The
When
following
by the
network
differential
voltage
IVMI
qd=
cos(+O)+qc(O)
wlZI
drops
IVMI
+ qcc(t) = VM sin (wt + )
dt
i(t)
w S
i(O)
(RL + RS) i(t) + L diet)
.
I
(RL + RS) + J(wL --C)
the
the circuit:
in which
+ RS\
2L
the triac is
represented
the
Fig.
in which
RLC series
by summing
to limit the
overshoot.
used for analysis,
or nonconducting
the
voltage
by an ideal switch.
an ac voltage
equation
around
circuit
replaced
in the blocking
open
must
stress and to have an acceptable
I
LCs
-1Zi
sin ( + 0)
(2)
is the instantaneous
current
after
~[exqdli+id]
the switch
+qd2
opens, qc(t) is the instantaneous

charge on the capacitor, VM
is the peak line voltage, and is the phase angle by which
the voltage
leads the current
After
differentiation
comes
a standard
constant
and
prior
second-order
coefficients.
to opening
rearrangement,
With
differential
the imposition
the
of the switch.
equation
equation
as follows:
Condition
II: (RL
+ RS)2
liqd
)
.
( exqd + Id
The
voltage
across
the device
the voltages
across
the snubber
the following
fundamental
< 4L!C
=~cos
(wt
+ IQtI .ext sin (~t
+ 1))
is determined
capadtor
relations:
t)
vCS
-IVMI
qc(t)
= tan -I
with
of the boundary
conditions
that i(O)=O and qc(O)=O, the equation
for the
charge on the capacitor
can be stated for the three circuit
conditions
1)
be-
_ qcCt)
-C"S
+ + 0)
vRS (t)
= RS
dqcCt)
-d-t-
by calculating
and resistor
from
The sum of these two voltages then represents the instantan

eous voltage across the triac. The following equations give
the instantaneous voltage for the three circuit conditions:
Condition I: (RL + RS)2 <4L/C
-IVMI [ I
v(t)=-IZ-I-[wCS
cos(wt+1>+O)
-RS sin (wI + 1>+

[C~
where V I and t I are the voltage and time of the 10-per-cent

point and V2 and t2 are the voltage and time of the
63-per-cent point. This program therefore allows evaluation
of various load and snubber combinations in a matter of
minutes.
0)]
+ IQtIE-<Xt
sin ({3t+ 1) + IjI)J
sin ({3t+ 1) + ~
(18)
where IjJis defined by the following expression:

1jJ= tan-I
~)
Condition II: (RL + RS)2 = 4L/C

-IVMI
vet) = -IZ-I-
~~s
cos(wt + 1>+0) - RS sin(wt + + 0)]
+_1_ [(I + <Xt)qd + idt]
c<Xt
Cs
+ RS [(I - <Xt)id - <x2tqd]

Condition III: (RL + RS)2
-IVMI [ I
vet) = -I-Z-IwCs
E-<Xt
(20)
> 4L/C
cos (wt + + 0)
-RS sin (wt + 1>+0)
E-<Xt
+-,(3 Cs
A computer is used to calculate the voltage across the

snubber because hand calculation is time-consuming. The
magnitude and time of occurrence of the peak voltage are
found by numerical analysis, and then the values and times
of the voltages at 10 per cent and 63 per cent of peak are
calculated. These values are used to compute the dv/dt stress
as defined by the following equation:
_ V2-Vl
dv
/dt
In general, it is most desirable from a cost standpoint to

use a device with the lowest possible VDROM capability. For
applications involving the control of a load operating on a
120-volt ac line a device with a VDROM of 200 volts would
be desirable; a 400-volt device should be used for operation
on a 220-volt line. The use of the lower-voltage device in any
application is contingent on the ability of the circuit to limit
any possible voltage ringing below the VDROM rating of the
device. The snubber can be designed to limit this voltage
ringing during the post-commutation period to within this
rating. Figs. 9 and 10 show the values of Cs and RS that
limit peak voltage across the triac to specific values. Fig. 9
allows the selection of snubber components that will limit
the peak voltage of 200 volts for a zero-power-factor load at
the desired dv/dt for an rms line voltage of 120 volts. Fig. 10
shows the components that limit the voltage to 400 volts
when the rms line voltage is 220 volts.
-t2=ti
Snubber Design Procedure

For use of the graphs, three things must be known: (I)
the rms line voltage, (2) the rms load current, and (3) the
allowable dv/dt. The following procedure is used to obtain
the required snubber components:
(I) Draw a vertical line on the proper voltage graph at the
load current.
(2) At the intersection of the vertical line and the dashed line
that represents the allowable dv/dt, draw a horizontal
line to the right vertical axis. Read the value of RS from
the right vertical axis.
(3) At the intersection of the vertical line and the solid line
that represents the allowable dv/dt, draw a horizontal
line to the left vertical axis. Read the value of Cs from
the left vertical axis.
As an illustration of the above procedure. Fig. 9 is used
to find snubber component values that limit the dv/dt stress
to 5 volts per microsecond for a 40-ampere rms current in a
l20-volt rms line. From Fig. 9, these values are Rs = 340
ohm and Cs = 0.18 microfarad.
As previously stated, these graphs were developed to
limit the peak voltage for a zero-power-factor load. For the
non-ideal load the graphs are used in the same fashion; a
reduction in the peak voltage following commutation and a

slight reduction in the dv/dt stress are the only effccts
introduced by the non-ideal load. The reduction in the peak
voltage excursion is caused by the decrease in instantaneous
voltage at the time of commutation. As the power factor
increases, the phase angle between the voltage and current
decreases toward 00. This decrease in the phase angle shifts
the time of commutation
in the half-cycle toward the
zero-voltage crossing and thus reduces the instantaneous
voltage. The reduction in the dv/dt stress is the result of both
the reduction in the voltage at commutation
and the
increasing resistive impedance of the load.
'"'"
~
t.o
"
1
u
'"
case, a triac with higher dv/dt capability or higher VDROM

rating should be used. A higher dv/dt capability allows
selection of new snubber components to meet the size and/or
cost requirements of the circuit. A higher VDROM rating
permits a higher peak voltage excursion that in general will
allow selection of a smaller snubber capacitor and smaller
resistor.
The circuit analysis described in this Note assumes the
effects of the triac to be a minimum. Thus some error is
introduced by neglect of the reverse recovery process and the
displacement current. The additional current flow tends to
increase the instantaneous dv/dt during the first few
microseconds following commutation. The over-all effect is
to increase sliglllly the average dv/dt stress across the device.
This effect is most noticeable when the snubber capacitance
is less than 0.001 microfarad. Selection of a snubber for a
lower dv/dt stress limit will generally eliminate this problem.
Because the design of a snubber is contingent on the
load, it is almost impossible to simulatc and test every
possible combination under actual operating conditions. It is
advisable to measure the pcak amplitude and rate of rise of
voltage across the triac after a snubber has been selected.
or
I
RMS LOAD CURRENT
Fig. 9-
10
(I )-AMPERES
'"
~
0.10
;t
;:;
Design curves for snubber that limits peak voltage

to 200 volts for 120-volt ac line and zero power
factor.
A numerical example shows how a load that is not purely

inductive reduces the peak voltage after commutation. The
snubber components for 8 volts per microsecond at an rms
current of 22.7 amperes are found from Fig. 9 to be 960
ohms and 0.04 microfarad. If the load is purely inductive,
the peak voltage is limited to 200 volts. If the load has the
same current rating but a power factor of 0.7, this snubber
nctwork limits the peak voltage after commutation to 140
volts. Tlie peak voltage is reduced because the instantaneous
line voltage at the time of commutation is only 121 volts.
n,C dv/dt stress is also slightly lower than the 8-volts-permicrosecond value. n,is example demonstrates that the
dcsign graphs of Figs. 9 and 10 can be used for loads having
any power factor.
Because the selection of snubber components is dependcnt on circuit and device characteristics, values obtained
may be impractical from a cost or sizc standpoint. In such a
468
468
I
RMS LOAD CURRENT
10
(I.) -
10D
AMPERES
Fig. 10- Design curves for snubber that limits peak voltage
to 400 volts for 220-volt ac line and zero power
factor.
References
I. Myril B. Reed, AJternati"g Current Circuit Theory (New
York: Harper & Brothers, 1948), pg. 276.
2. Ibid, pg. 284.
3. Ibid, pg. 284.
Thyristors
ffilCI8LJD
Solid State
Division
Application Note
AN-6054
Triac Power Controls for
Three- Phase Systems
The
power
has
growing
demand
in heating
controls
resulted
control
in the
of
approach
switching
for
solid-state
and other
increasing
three-phase
sWitching
industrial
use of triac
power.
This
Note
circuits
explains
to the ctesign of triac control circuits

of three-phase
power.
The basic
of
ac
2.
Only
applications
in the
3.
for use in the

design
rules
4.
of
for
isolation
of the dc logic circuitry
in power
three-phase
systems are pointed
out. Recom
mended
circuits
configurations
intended
for
balanced
three-phase
ments for
(Unbalanced
are then shown for power-control

use with both inductive
and resistive
loads,
each type of
threephase
design requirements,
and
the specific
design
loading
condition
systems,
which
are not covered
require-
are discussed.
have different
in this Note.)
from the three-phase
conditions
circuits:
I.
are also imposed
The
load
load;
the
switch is used as
* The following
in the design of the triac control
should
with
either
delta
be
connected
the
triacs
in
placed
three-wire
external
or wye arrangements
to the
may be used.
Four-wire
loads in wye configurations
can be handled
as
independent
systems.
three
configurations
each phase
rather
be handled
as three
addition
to
and CA3079.
than
a triac
is connected
in the incoming
independent
the CA3059,
in this Note
single-phase
in which
integrated-circuit
zero-voltage
trjgg:erjn~ in the power-control
CA3059
in this Note,
the
lines can also
single-phase
RCA-CA3058
Delta
within
systems.
and -CA3079
s\\'llchc'i may al50 be used for tfiac

circuits. All information given on the
is, in general,
equally
applicable
to the CA3058
power
be
for the
electrically
system.
For operation
with
resistive
loads,
the zero-voltage-
Integrated-Circuit Zero-Voltage Switch

The
RCA-CA3059
is intended
thyristors
integrated-circuit
primarily
and
as a trigger
is particularly
temperature-control
zero-voltage
circuit
suited
applications.
for
Fig.
switch
for the control

use
I shows
in
of
thyristor
a functional
block diagram of the CA3059 integrated-circuit

zero-voltage
switch. This multistage
circuit employs
a diode limiter, a
detector,
driver
current
a differential
to proVide
capability
transistors
developed
other
of these
CA3059
controller
the
should
integrated
circuit.
for
regubtion
the
inhibits
gate circuit
the
pulse
the
in the
integrated-circuit
Or shorted.
The
an on-off
type of
ctepending upon the
required.
schematic
Any triac
such as
to the gate
circuit
opened
as either
controller,
The dc
trigger
directly
fail-safe
sensor
may be employed
or a proportional
2 shows
The
to the thyristor
inadvertently
degree of temperature
Fig.
A built-in
pulses
action.
by an internal
has sufficient
elements.
circuits.
can be applied
external
be
circuit
integrated
by this circuit
that
switch
and a Darlington
these stages is supplied

power
supply
that
of an SCR or a triac.
even!
amplifier,
the basic switching
to drive external
and
application
configuration
*'n
described
zero-voltage
power
triacs.
is available
must
triac gating signals are required.
supply voltage for

zener-diode-regulated
circuits
signal
signal
Three separate
threshold
In the powercontro!
This
switching technique
should be used to minimize any
radio-frequency
interference
(RFI)
that
may be
generated.
output
RCA-CA3059
integrated-circuit
the trigger
circuit
for the
command
circuits.
isolated
a basic
employed
in this approach
are outlined. an integrated-circuit
zero-voltage
switch specifically
intended
for use in triac
triggering
is briefly
described,
and the necessity
for and
methods
controls
one logic
control
diagram
that is driven
for
the
directly
CA3059
from
the
output
terminal
of this circuit should be characterized
for
operation
in the 1(+) Or 111(+) triggering modes, i.e., with
positive gate current (current
flows into the gate for both
polarities
of
directly from
277 volts.
the
applied
ac voltagc).
a 50-, 60-, or 400-Hz
The
clfcuil
ac line voltage
opcrJtes
of 12(: to
AC Input Voltage
(50/60
or 400 Hz)
2.
'0
20
25
I
0.
I
0,
RESISTANCE
VALUES
RCA CAJ059
1~EC.RATi.o. ....~C~T
ARE
IN OHMS
_
F
block diagram of the CA3059 integrated-circuit
ALL
0.5
120
I---~-
L __
271
zero-voltage switch_
for RS
!!
208/230
Fig_ I-Functional
DISSipation Ratmg
VAC
Input SerIes
ReSIStor (RS)
AI1~p~iFE
transistor
0 I), which
generates
an oujput
pulse during
each
passage of the line voltage through zero. The limiter output is

also applied
to the rectifying
diodes D7 and D 13 and the
external capacitor
CEXT that comprise the de power supply.
The power
supply
provides
approximately
6 volts (at
terminal
2)
as the
de supply
CA3059.
The
on/off
through 05) is basically
gating
circuit
direct
triac
the inputs
Fig.
The gating
zero volts,
the
external
I",
and
shows
supplied
to
the
of
(i.e.,
trigger
at low
current
thyristors
tions. (The RCA
is enabled
to terminal
of the fail-safe
and
the
when
be a
must be
pulses
to the
The CA3059 can supply sufficient

to trigger most RC A thyristors
at
However.
under
ambient-temperature
requirements),
worst-case
extremes
selection
of
the
and
higher-
may be necessary
for particular
applicatechnical
bulletin
File No. 406 lists triacs
In the
photo-optic
used
only
when
thermistor
tiometer.
fail-safe
circuit
the ratio
functions
provide
the
signal
from
of the sensor
is the sensor,
Rp is less than
impedance
to the impedance
4 to I.
at
of the
if a
poten-
isolators
circuit
Resistive
balanced
/
-+-7
\.
\.
the
three
phases cannot
2.
A single
three-wire
3.
Two phases
the system.
circuit
value for
720-volt 60Hz line voltage).
operation
from
The
light-emitting
coupled
is the
in a
input
is the output section. The

isolation typically of 1500
such as pulse transformers,
can also be used with some
phase
load,
relationships
such
be switched
of
as may be used in
all
on simultaneously
at
These
type
of
must be turned on for initial starting of

These two phases form a single-phase
which
is out
phases.
conditions
of
phase
with
The single-phase
phase by 30 degrees
degrees.
and lags the other
indicate
that
both
circuit
in order
of
its
leads one
phase
by 30
to maintain
system
in which no appreciable
RFI is generated
by the
switching actIOn from initial starting through the steady-state
operating
*Thc
is a typical
logic
phase of a wye configuration

system cannot be turned on.
component
condition,
the system
switching,
shows
with
to
and
de logic
must
three-phase
random
circuitry
circuit
that
the
starting.
turn on the
the command
circuit
on, by
and then must
operation.
a simplified
through
first be turned
as a single-phase
heater
control
switching
in
also possible
the CA3059 and the ac line voltage (pulse duration
de
load.
zero voltage.
condition,
between the output pulses of
the
the
in this type of application:

are 120 degrees apart; consequently,
when heat is not required.
shown
of
and
of an infrared
basic
resistive
ditions are inherent

1. The phases
command
required,
Fig. 3- Timing relationship
logic
in all
heater applications,
in which the application
of load power is
controlled
by zero-voltage
switching.
The following
con-
three-phase
synchronous
-----V--+--~"J<--~
de
line
in this Note,
isolators)
are
isolation
ac circuits
consist
illustrates
three-phase
zero-voltage
/'.,
the
Loads
Fig.
Fig.
/'.,
of
a common
modifications.
revert to synchronous
LI NE
VOLTAGE
the
volts. Other isolation techniques,

magnetoresistors,
or reed relays,
however,
250C.
electrical
section, and the photo transistor

two components
provide a voltage
of this integrated
File No. 490, RCA
properly,
to
circuits
described
(i.e., photo-coupled
to
the sensor should then be accidentally

opened or shorted,
power is removed from the load (i.e., the triac is turned off).
internal
three-phase
techniques
command
application
note ICAN-6182,
and the ReA Linear Integrated
Qrcuits Manual, IC-42.)
As shown in Fig. I, when terminal
13 is connected
to
terminal 14, the fail-safe circuit of the CA3059 is operable. If
The
referenced
this type of isolation
point
phases.
designed
for use with the integratedcircuit
zero-voltage
switch as the triggering circuit. Detailed information
on the
operating
characteristics
and capabilities
circuit are given in RCA technical bulletin
be
however,
common
diode aimed at a silicon photo

transistor,
common
package.
The light-emitting
diode
must
the
cannot
the
all
output
respect
circuitry
systems,
because
photo-coupled
I must
of
with
power
is essential,
for
must be
circuit
width
a thyristor
of 250C.
temperatures
maximum
circuit
position
gate
conditions
of
08 and 09)
the sensing-amplifier
the output
the
stages
Le., the line voltage
voltage
incoming
ac line voltage.
gate voltage and current
ambient
(transistors
are at a high voltage,
"high",
logical"
'-high".
a driver
triggering.
other
sensing
amplifier
(transistors
02
a differential
comparator.
The triac
contains
approximately
be
to the
for polyphase
configuration
employs
steady-state
In this system,
the logic
system
is given when
to turn off the system
Time proportioning
of
zero-voltage
operating
heat is
is given
heat control
is
the use of logic commands.

the low-level
electrical
dictates the state of the load. For temperature

circuitry
includes
a temperature
sensor for
provide"
controls,
feedback.
signal
that
the de logic
The ReA
integrated-circuit
zero-voltage 'iwitch. when operated in the de mode
with "orne additional
circuitry,
can replace the de logic circuitry for
temperature
controls.
TO
3 PHASE
RESISTIVE
lOAD
(DELTA OR WYEI
Fig. 6- Three-phasepower control that employs zero-voltage synchronous switching both

for steady-state operation and for starting.
as start-up is accomplished,
the three photo-coupled
isolators
OCI3,
OCI4,
and OCI5
take control,
and three-phase
synchronization
begins_ When the "logic command"
is turned
off, all control is ended. and the triacs automatically
turn off
when the sine-wave current dccreases to zero. Once the first
phase turns off. the other two will turn off simultaneously,
90 later, as a slflgi~pllasc
lineto-Iine circuit, as is apparent
from Fig. 4.
Inductive
Loads
For inductive
required
because
instantaneously;
usually
the
therefore,
zerovoltage
inductive
turnon
current
the amount
is not generally
cannot
is
of the lagging nature
provide
a continuous
dc output
instead
of pulses at points'of
This mode of operation

of terminal 12 to terminal
in Fig. 7. The output
of the CA3059
approximately
connected
5 milliamperes
series resistor.
is recommended
to
terminal
of the
at zero
may be
applications.
The most
in the dc mode, i.e_, to
zero-voltage
crossing.
plished by connection
750-ohm
T230lD
increase
of RFI generated
Also, because
interfaced
to a triac for inductive-load
direct approach
is to use the CA3059
to
loads,
negligible.
inductive
current,
the triacs cannot be pulse-fired
voltage. There are several ways in which the CA3059
should
in the
is accom7, as shown
also be limited
dc mode
by
the
Use of a triac such as the RCA

for this application.
Terminal 3 is
2 to
limit
the
steady-state
power
RANDOM
START-UP
POINT
V2
30"--1
Fig. 4- Voltage phase relationship for a three-phase resistive load when the application of load power is
controlled by zero-voltage switching: (a) voltage
waveforms, (b) load-circuit orientation of voltages.
(The dashed lines indicate the normal relationship
of the phases under steady-state conditions. The
deviation at start-up and turn-off should be noted.)
The three photo-coupled inputs to the three CA3059

circuits change state simultaneously in response to a "logic
command". The CA3059 circuits then provide a positive
pulse, approximately 100 microseconds in duration, only at a
zero-voltage crossing relative to their particular phase. A
balanced three-phase sensing circuit is set up with the three
CA3059 circuits each connected to a particular phase on
their common side (terminal 7) and referenced at their high
side (terminalS), through the current-limiting resistors R4,
R5, and R6, to an established artificial neutral point. This
artificial neutral point is electrically equivalent to the
inaccessible neutral point of the wye type of three-wire load
and, therefore, is used to establish the desired phase
relationships. The same artificial neutral point is also used to
establish the proper phase relationships for a delta type of
three-wire load. Because only one triac is pulsed on at a time,
the diodes (0 I, 02, and 03) are necessary to trigger the
opposite-polarity triac, and, in this way, to assure initial
latching-on of the system. The three resistors (R I, R2, and
R3) are used for current limiting of the gate drive when the
opposite-polarity triac is triggered "on" by the line voltage.
In critical applications that require suppression of all
generated RFI, the circuit shown in Fig. 6 may be used. In
addition to synchronous steady-state operating conditions.
this circuit also incorporates a zero-voltage starting circuit.
The start-up condition is zero-voltage synchronized to a
single-phase, 2-wire, line-to-line circuit, comprised of phases
A and B. The logic command engages the single-phase
"start-up" CA3059 and three-phase photo-coupled isolators
OCI3, OCI4, OCI5 through the photo-coupled isolators OCII
and OCl2. The single-phase CA3059, which is synchronized
to phases A and B, starts the system at zero voltage. As soon
3 - PHASE
RESISTIVE
LOAD
(DELTA OR WYE)
Fig. 5-Simplified
diagram of a three-phase heater control that employs zero-voltage synchronous
switching in the steady-state operating conditions.
dissipation
inductive
within
the CA3059.
For most
load applications,
the current-handling
of the T230 I D triac (2.5 amperes)
is not sufficient.
three-phase
capability
Therefore,
the T2301D
is used as a trigger triac to turn on any other
currently
available power triac that may be used. The trigger
triac is used only to provide trigger p.).llses to the gate of the
power triac (one pulse per half cycle); the power dissipation
in this device, therefore,
will be minimal.
Simplified
circuits
using
relays will also work quite
application.
The RC networks
pulse transformers
and reed
satisfactorily
in this type of
across the three power triacs
are used for suppression

of the commutating
dv/dt when the
circuit operates into inductive loads. (A detailed explanation
of commutating
dv/dt is provided in the basic discussion
of
thyristors
in the ReA Solid-State Power Circuits Designer's
Handbook. SP52.)
AppliCatiOn
NOte
AN-6096
Solid-State Approaches to
Cooking-Range Control
As a result of decreasing semiconductor costs, advanced

system-cost analysis by appliance manufactu'ers, and increased
consumer consciousness, various solid-state range-control designs can be applied to today's market. This Note presents
various solid-state design approaches available to the rangecontrol designer.
Design and Function Considerations
The primary areas of range control design to be considered
are the various heating elements: the oven, broiler, and top
burners. The most popular method of control of these units is
by switching relays or "infinite-switch"-type
heat-sensitive
switches. Such controls generate radio-frequency interference,
RFI, and can have limited life with respect to switching cycles
because of contact failures. In addition, the nest of wiring
usually needed to interconnect the incoming power line and the
various independent loads results in substantial labor costs and
possible substantial in-line reworking of ranges to accommodate
design changes or failures. Calibration of these controls is
generally cumbersome and time consuming because multiple
settings are usually involved. However, from the standpoint of
parts cost, the control is acceptable.
Semiconductor costs have been decreasing, and are approaching electromechanical-component
costs; however, to
justify the use of solid-state controls, cost factors other than
actual parts costs must be considered. The reliability and the
ease of handling of solid-state controls add to their dependable
operation and desirability. Dependability can be measured in
fewer in-line design corrections and possibly fewer calibrations,
and, in turn, lower manufacturing costs. Lower manufacturing
costs coupled with the ease of handling of printed circuit
boards, which eliminate the nest of wiring, represent a further
over-all system-cost reduction.
Other advantages of solid-state-control designs are manifest
in their ability to accept design change or add-on designs to
satisfy a customer's desire for improved products. For example,
the self-cleaning feature is easily incorporated in the various
oven controls; this feature is discussed in detail below.
Before any particular design approaches are discussed, a
review of some of the characteristics of the devices used is rec-
ommended. Because of the unusually high ambient temperatures that can be encountered in various areas of the range,
caution must be used in locating the semiconductors, particularly the power devices. Areas on the range that allow for the
mounting of these devices and/or their heat sinks should' be
determined by the appliance manufacturer according to temperature profiles of his enclosure.
Top-Burner Controls
As an introductory method of control, a retrofit approach to
the top-burner design where "infinite" control is used is
examined. A single-time-constant phase-control circuit is used
on each burner as the infinite control. Fig. I shows the schematic diagram of the circuit; Fig. 2 shows the various wave-
:~~-----+---~.-----~.,----~.,~~ ..
AC
TYPICAL VALUES:
Llf;IOO~H
R1=2.2K
elf :0.1 I'F
CI =0.1 ~F
PI :250 K
Fig. 1- Schematic diagram of retrofit-type
top-burner control.
forms for the circuit. Because each heater-control circuit is

identical, an examination of one, Bj, is suflicient for an understanding of all of the circuits. Potentiometer PI, resistor R j ,
and capacitor C 1 form a 60-Hz voltage divider in which high
values of resistance for PI limit the peak voltage swing on Cj.
The diac, which is a three-layer, p-n-p device, exhibits a high
impedance until a peak voltage of approximately 32 volts is
applied across it. At this time it displays a negative resistance.
cluded in the oven to provide a closed-loop system for accurate

control of the oven temperature. The RCA CA30591 ,2 is used
to accomplish the zero-voltage logic switching; the functional
block diagram for the CA3059 is shown in Fig. 4. *
D
~32
V PK
LJ,...
'(J'"
"
L:L
Fig.
2- Waveforms for the circuit of Fig. 1.
Therefore, if the potentiometer is set to allow capacitor C I to

charge up to 32 volts peak, the capacitor discharges through
the diac into the gate of the triac and turns the triac on to its
low-impedance state. This action is repeated every half cycle.
Llf and C!fare included to suppress the RFI generated by the
switching wavefront of the triac.
This type of circuit is a retrofit design, but it has several disadvantages. These disadvantages include cost, the need for RFI
fJ.1tering(a substantial part of the total cost), and the need for
considerable hand wiring, as the bulky discrete components do
not warrant printed-circuit-board mounting. However, infiniteswitch-type control of the burners is accomplished, and the
feasibility of solid-state device use in the control design is
demonstrated.
Oven/Broiler
Controls
Fig. I shows that the triac can be used to switch the burner
elements without arcing or contact bounce, but the resulting
"clean" waveform, Fig. 2, still has a high-frequency content in
the AM broadcast band. To suppress this nuisance, a costly
RFI filter must be incorporated in the design. The triac can
still be utilized, however, by using another circuit approach,
zero-voltage switching, ZYS, that can switch the heavy resistive loads with minimized RFI generation.
Zero-voltage switching is demonstrated in the oven control
circuit shown in Fig. 3. In this circuit, a sensor element is inBROILER
L'~:>-----"'~~-0L.JL...J4
!OOFF
I
I
I
I
p,L
OVEN
Fig. 4- Functional
block diagram of CA3059
;ntegrated-.e;rcuit
zero-voltage switch.
The limiter stage of the CA3059 clips the incoming ac line

voltage to approximately 8 volts. This signal is then applied to
the zero-voltage-crossing detector, which generates an output
pulse during each passage of the line voltage through zero. The
limiter output is also applied to a rectifying diode and an external capacitor that comprise the dc power supply. The power
supply provides approximately 6 volts, as the YCC supply, to
the other stages of the CA3059. The on/off sensing amplifier is
basically a differential comparator. The triac gating circuit contains a driver for direct triac triggering. The gating circuit is
enabled when all the inputs are at a high voltage; i.e., the line
voltage must be approximately zero volts, the sensing-amplifier
output must be high, the external voltage to terminal I must be
a logical I, and the output of the fail-safe circuit must be high.
Fig. 5 shows the circuit diagram of the CA3059. The zerovoltage threshold detector consists of diodes D3, D4' D5, and
D6, and transistor Q I' The differential amplifier consists of
transistor-pairs Q2-Q4 and Q3-Q5' Transistors QI, Q6' Q7'
Q8' and Q9 comprise the triac gating circuit and driver stage.
Diode D 12, zener-diode D 15, and transistor Q I 0 constitute the
fail-safe circuit. The power supply consists of diodes D7 and
D 13 and an external resistor and capacitor connect~d to terminals 5 and 2, respectively, and to ground through pin 7. If
transistor pair Q2-Q4 and transistor QI are turned off, an
output appears at terminal 4. Transistor QI is in the off state if
the incoming line voltage is less than approximately the sum of
the voltage drops across three silicon diodes (2.1 volts) for
either the positive or negative excursion of the line voltage.
Transistor pair Q2-Q4 is off if the voltage across the sensor,
connected from terminals 13 to 7, exceeds the reference voltage
from 9 to 7. If either of these conditions is not satisfied, pulses
are not supplied to terminal 4. Fail-safe operation requires that
terminal 13 be connected to terminal 14. The addition of
Og
:K
"
R8
15
R6
15K
ALL RESISTANCE
VALUES
Rg
25
ARE IN OHMS
Fig. 5- Schematic diagram of CA3059
hysteresis and the elimination of half-cycling can be achieved

by a resistive voltage divider connected from terminals 13 to 8
and from 8 to 7.
As shown in Fig. 3, the temperature of the oven can be adjusted by means of PI, which acts, along with the sensor, as a
voltage divider at terminal 13. The voltage at terminal 13 is
compared to the fixed bias at terminal 9 which is set by internal resistors R4 and RS' When the oven is cold and the resistance of the sensor is high, Q2 and Q4 are off, a pulse of
zero-voltage switch.
gate current is applied to the triac, and heat is applied to the

oven. Conversely, as the desired temperature is reached, the
bias at terminal 13 turns the triac off. The closed-loop feature
then cycles the oven element on and off to maintain the desired
temperature to approximately 20C of the set value. Also, as
has been noted, external resistors between terminals 13 and 8,
and 7 and 8, can be used to vary this temperature and provide
hysteresis. In Fig. 6, a circuit that provides approximately
I O-per-cent hysteresis is demonstrated.
NTC
RI
R2
5 K
12 K
12 K
12 K
68 K
12 ~
lOOK
200K
18 K
In addition to allowing the selection of a hysteresis value,

the flexibility of the control circuit permits incorporation of
other features. A PTC sensor is readily used by interchanging
terminals 9 and 13 of Fig. 3 and substituting the PTC for the
NTC sensor. Note that in both cases the sensor element is
directly returned to the system ground or common, as is often
desired. Terminals 9, 10, and II, Fig. 3, can be connected by
external resistors to provide for a variety of biasing, e.g., to
match a lower-resistance sensor for which the switching point
voltage has been reduced to maintain the same sensor current.
To accommodate the self-cleaning feature, external switching, which enables both broiler and oven units to be paralleled,
can easily be incorporated in the design. Of course, the potentiometer must be capable of a setting such that the sensor,
which must be characterized for the high, self-clean temperature, can monitor and establish control of the high-temperature,
self-clean mode. The ease with which this self-clean mode can
be added makes the over-all solid-state system cost-competitive
with electromechanical systems of comparable capability. In
addition, the system incorporates solid-state reliability while
being neater, more easily calibrated, and containing less-costly
system wiring.
state, the load is energized. When the temperature of the PTC

sensor increases to the desired temperature, the sensor enters
the high resistance state, the voltage on terminal 2 becomes
greater than that on terminal 3, and the triac switches the load
off. Further cycling depends on the voltage across the sensor.
Hence, very low values of sensor and potentiometer resistance
can be used in conjunction with the CA3059 power supply
without causing adverse loading effects and impairing system
performance.
Low-Resistance Sensor
The circuit of Fig. 3 performs well with sensor values in the
5- to I O-kilohm range, and is used widely in home comfort controls. Although PTC sensors rated at 5 kilohms are available,
the existing sensors in ovens are usually of a much lower value.
The circuit depicted in Fig. 7 is offered to accommodate these
Proportional Zero-Voltage Switching
Zero-voltage switching control can be extended to applications in which it is desirable to have constant contrel of the
temperature and a minimization of system hysteresis. A closedloop top-burner control in which the temperature of the
cooking utensil is sensed and maintained at a particular value
is a good example of such an application; the circuit for this
control is shown in Fig. 9. In the circuit, a unijunction oscillator is outboarded from the basic control by means of the
internal power supply of the RCA CA3079. The output of this
ramp generator is applied to terminal 9 of the CA3079 and
establishes a varied reference to the differential amplifier.
----t=<-------<
0--<.....
(
92CS- 20842
Fig. 7- Schematic diagram of circuit for use with low-
resistance sensor.
nov
inexpensive metal-wound sensors. A schematic diagram of the

RCA CA3080, the operational transconductance amplifier used
in Fig. 7, is shown in Fig. 83 With an amplifier bias current,
IABC, of 100 microamperes, a forward transconductance of 2
millimhos is achieved in this configuration. The CA3080
switches when the voltage at terminal 2 exceeds the voltage at
terminal 3. This action allows the sink current, Is, to flow from
terminal 13 of the CA3059 (the input impedance to terminal
13 of the CA3059 is approximately 50 kilohms); gate pulses
are no longer applied to the triac because Q2 of the CA3059 is
on. Hence, if the PTC sensor is cold, i.e., in the low resistance
60Hz
AN-6096
hot sensor. For precise temperature regulation, the time base of

the ramp should be shorter than the thermal time constant of
the system but longer than the period of the 60-Hzline. Fig. 10,
which contains various waveforms for the system of Fig. 9,
indicates that a typical variance of O.SoC might be expected
at the sensor contact to the utensil. Overshoot of the set temperature is minimized with this approach, and scorching of
any type is minimized.
Central-Processor
Since the phase-control top-burner arrangement of Fig. I
requires excessive handling in construction and does not lend
itself to printed-circuit-board construction, it is recommended
that a more compact, less expensive, total printed-circuit-board
approach to the range control be investigated. Further, in order
to cut system costs, it is recommended that similar circuit
functions be multiplexed or shared as much as possible in one
area in the circuit. A design that meets these requirements is
shown in the block diagram of Fig. I J and the schematic
diagram of Fig. 12. The top burners Ll, L2, L3, and L4
VLOAD
120V
GO-Hz
Now that the feasibility of a solid-state control for the

range has been established, the various approaches can be
joined and a system constructed. The phase-control circuit
could be used for three lOp burners, the proportional control
II
2ig
I
I
I
vI
I
I
RI
~o"~
Jn
39
2 W
L_
---,
I
I
I
I
I
I
I
__ J
(Fig. 12) are all controlled by the single logic bank of COS/MOS
circuitry composed of the RCA CD4013A and the RCA
SET 1 6
DI 5
ClOCKl
RESET I 4
SET 2 8
D2 9
CLOCK2
II
RESET 2 10
vss
92C5-20838
VDD
16
DATA A
IA
CLOCK A
2A
4
STAGE
RESET A
3A
10
4A
DATA B
15
RES~T B
13
12
CLOCKa
4
14
IB
2B
STAGE
3B
4B
B
Vss
92CS-
20837
CD4015A; the logic diagrams of these devices are shown in

Figs. 13 and 14.
The RCA CD4013A consists of two identical independent

data-type flip-flops. Each flip-flop has independent data, set,
reset, and clock inputs and Q and Q outputs. These devices can
be used for shift-register applications and, by connecting the Q
output to the data input, for counter and toggle applications.
The logic level present at the D input is transferred to the Q
output during the positive-going transition of the clock pulse.
Setting or resetting is independent of the clock and is accomplished by a high level on the set or reset line, respectively.
The CD4015A consists of two identical independent fourstage serial-input/parallel-output
registers. Each register has
~~E
~LTAGE
CLOCK
POSITION
b
independent clock and reset inputs as well as a single serial

data input. Q outputs are available from each of the four
stages on both registers. All register stages are D-type masterslave flip-flops. The logic level present at the data input is
transferred into the first register stage and shifted over one
stage at each positive-going clock transition. Resetting of all
stages is accomplished by a high level on the reset line. Register
expansion to eight stages using one CD4015A package, or to
more than eight stages using additional CD40 l5A's, is possible.
With the CD4015A connected as an eight-stage register and
the CD4013A used as the reset, the waveforms of Fig. 15
A A A A A A flJ\ A A A f\1j A A A
~VV Vl) If VIfIJlJVl[\[VVV V\[V

A A A A A A A A " A A A A A A A fI
c
WVDAM
A A AAf\P \[VA
V \[VVIJV
result when clocking pulses are applied from the clock stage, a
simple RC diac oscillator (60 Hz). The outputs of the
COS/MOS register are fed to the eight-position rotary-selector
switch for selection of the duty cycle to be applied to the load.
The output of the rotary switch is connected to the drive
triacs through the Darlington-connected
triac gate drivers.
These drivers are made up of pairs of transistors from the RCA
CA3082, a seven-transistor, high-current (100 milliamperes),
silicon, n-p-n array. The bases of the input transistors of the
Darlington drivers are all connected to the collector of Q I,
the zero-vol tage sensing transistor, so that triac gate-drive
pulses are applied only when the ac line voltage is approximately
2.1-volts peak. That is, base drive shunted from the Darlington
drivers by Q I causes zero-voltage switching of the triacs and
restricts the average power drain of the dc supply by pulsing
the triac gates. This circuit arrangement results in minimized
RFI. Fig. 16 demonstrates the power waveforms for the circuit
of Fig. 12. Fig. 17 demonstrates the effect of the zero-voltage

sensing transistor, Q I, and the relationship between the various
CaS/MaS outputs and the base drive and subsequent gate
drive of the Darlington drivers. By using an additional selector
switch, triac, and related gate circuitry (made up of spare transistors in the CA3082) a controllable convenience outlet can be
provided. This outlet can be used for an electric fry-pan,
POSITION
h
POSITION
_r===J
_n~n~n~n
_
COS/MOS
OUTPUT
coffee maker, waffle iron, toaster, etc., and can be controllable

in the same manner as the top-burner elements.
An oven control is incorporated in the design by using an
RCA CA3086, an array of five n-p-n transistors with one pair
differentially-connected
as a Schmitt trigger in closed-loop
configuration. Again, the common de supply of the system is
used in addition to the zero-voltage sensing transistor, Q I. An
additional Darlington pair available in the CA3082 is used for
triac gating. As shown in Fig. 12, an NTC sensor, TH I , forms a
voltage divider with the potentiometer, Pl. the temperatureselector switch. The input transistor of the Schmitt trigger is a
Darlington pair to provide sensitivity. Resistor R8 is chosen to
allow for the desired amount of circuit hysteresis. When the
sensor is cold and has a large resistance, the Darlington input
is turned on and causes output transistor Q I to turn off. The
VCC fed to the zero-voltage sensing transistor and respective
gate drive switches the oven on. As the desired oven temperature is reached, the sensor resistance decreases and the voltage
it controls drops below the SWitching threshold of the Schmitt

trigger; this drop in voltage removes the gate drive to the oven.
A PTC sensor could easily be used by inverting the sensor and
potentiometer. Of course, with proper external switching of
the oven elements and the incorporation of a fixed resistor to
bias the Schmitt trigger to the high temperature of the selfcleaning mode, self-cleaning action can be accommodated by
this system. Care must be taken, particularly with the location
of the power triac for the oven, to afford the best possible
ambient temperature conditions and heat sinking.
Conclusions
With the circuitry of Fig. 12, control of the temperature of
the top burners is provided without the need for calibration of
a sensor element, and the design is well suited for printedcircuit-board-module use. Extension of the circuit concept
could lead to a future hybrid design incorporating custom chips.
The nest of wiring which is now present in ranges is minimized
by the use of the printed-circuit board. Zero-voltage switching
of the power elements results in minimized RFI, while the
single calibration between PI and TH I or an auxiliary calibration potentiometer is the only calibration necessary in the
oven control. These concepts should lead to easier manufacture
with limited in-line failures, because the printed-circuit-board
modules could be tested before assembly into the range, and
lower manufacturing costs because of the decreased amount of
wiring. The history of solid-state dependability should also be
reflected in the low amount of field failures.
References
I. "Application of RCA-CA3058 and RCA-CA3059 ZeroVoltage Switches in Thyristor Circuits", by George J.
Granieri, RCA Application Note ICAN-6158.
2. "Applications and Extended Operating Characteristics for
the RCA-CA3059 IC Zero-Voltage Switch", by H. M.
Kleinman and A. Sheng, RCA Application Note ICAN-6268.
3. "Applications of the CA3080 and CA3080A High-Performance Operational Transcondu~tance Amplifiers", by H. A.
Wittlinger, RCA Application Note ICAN-6668.
4. "Linear Integrated Circuits-Building Blocks for Control
Applications", by George J. Granieri, RCA Reprint ST-6053.
Power Switching Using

Solid-State Relay
Solid-state relays make use of a semiconductor device for control

of ac or de power. Since, in most ac applications, the semiconductor
element chosen for power control is the triac. this Note describes the
triac as a power-switching element. Advantages and disadvantages of
the active element over the electro-mechanical relay are discussed in
general terms.
Basic parameters. such as surge in-rush capability.
transient-voltage ratings, suppression network, turn-off consideration
and the different modes of triac gating are also discussed. AC power
control is covered by various circuit designs for ON/OFF control.
zero-voltage switching, and line-voltage isolation.
Power switching using electromechanical relays (EMR) is probably as old as the electrical industry is. The EMR is a controlled device having either an ON state or an OFF state capable of handling
large amounts of power for a relatively low input power; it has widespread use in power and logic circuits. The relay comes in many
forms (general purpose, telephone type, TO-S. reed. mercury wetted.
etc.) and has various contact configurations.
During the past few
years, the EMR has been challenged by a new breed of relay which
has no moving parts, is capable of handling large amounts of power
for relatively low input power, and that comes in many package and
circuit configurations.
This new breed has been dubbed the "SolidState Relay" or SSR, and uses transistors for dc power-control or
triacs for ac power control. The SSR is particularly useful in areas
in which increased reliability is required, and in which shock or
mechanical fatigue impose severe limitations on the electromechanical relay. The major limitations to SSR use are economic factors. line
isolation, immunity from line transients, and the need for multiplepole arrangements.
Thyristors (silicon controlled rectifiers and triacs) are semiconductor switches whose bistable state depends upon the regenerative feedback associated with a p-n-p-n structure. The SCR is a unidirectional device used primarily for dc and ac functions. whereas the
triac is a bidirectional device used primarily for control of ac power.
5 TART ING MATERIAL:

HIGH- RESISTIVITY
n-TYPE
SILICON
GROW SILICON DIOXIDE

FILM. DI:FINE AND
D'FFllSE
p+ REGIONS,
GROW SILICON DIOXIDE

FILM. DEFINE AND
DIFFUSl
n+ REGIONS.
DEFINE AND ETCH

GATE MOATS AND.
GRIDS.
APPLY AND FIRE HARD

GLASS PASSIVATING
LAYER.
The fabrication of a standard, glass-passivated triac requires the

seven basic steps illustrated in Fig. I and delineated below.
I. The process
wafer;
2.
begins with an n-type,
high-resistivity,
silicon
p layers are diffused deeply into both sides;
3. Silicon-dioxide diffusion masks are grown, and p+ regions are

defined and diffused into the wafer;
4. A second oxide diffusion mask is grown, and n+ regions are
defined and diffused into the wafer:
5. A silicon-dioxide etch mask is grown and defined.
gate moats are etched into the wafer;
Grids and
OPEN CONTACT AREAS

AND METALLIZE.
NICKEL LEAD-TIN
SOLDER. LASER-SCRIBt
AN(l BREAK INTO
PELLETS.
6. A hard glass-passivated layer is applied in the grids and gate

moat;
7. Contact areas are opened on the wafer and nickel-Ieact-tin
solder metallization is applied.
The wafer is then laser-scribed
and separated into pellets. Fig. 2 contains an isometric view of a
completed triac and dimensions of three devices now available or in
the design stage.
The effects of voltage and temperature are important in thyristors

because of the regenerative action of these devices, and because they
Another important parameter associated with a triac is its di/dt

rating, a parameter most significant during turn-on. With the initiation of a gate signal, the active area closest to the gate region is,
essentially, turned on, and, for a few microseconds, the instantaneous power dissipation is a function of the rate of rise of the onstate current. This power dissipation may cause localized heating and
result in silicon-lattice destruction and triac degradation. The di/dt
ratings are a function of triac geometry and pellet size, and ratings of
100 Alps are easily achieved. In most circuit applications, stray or
actual-load inductance is present, and for the condition of di/dt =
Epk/L, it is easily seen that a few microhenries of inductance are all
that are required to limit circuit di/dt to within the maximum rating.
When di/dt ratings are exceeded, it is usually because of the RC
snubber network in parallel with the triac. In such networks, stray
inductance is essentially zero, and the magnitude of discharge current
is limited by the snubber resistance. The di/dt in the snubber is not
affected by the inductance added to quell the di/dt caused by the
stray or actual-load inductance: only careful selection of RC-snubbernetwork components will eliminate this second source of di/dt and
minimize triac failures.
It is well known that triacs are susceptible to non-gated turn-on

and possible damage as a result of transient voltages. Transients are
generally caused in a triac by the switching of inductive loads on adjacent lines or in proximity to the device. If the transient voltage
gcnerated exceeds the critical rate*of-rise of the off-state voltage
(dv/dt) then a displacement current (i = Cdv/dt) is generated which
causes non-gated turn-on. Non-gatcd turn-on is not destructive if the
energy transfer is within the maximum rating of the device; however,
if the transient voltage does not exceed the off-state dv/dt rating, but
does exceed the maximum voltage rating, then triac breakover
occurs. Whether triac degradation occurs is dependent on whether
the energy transfer is within the bulk silicon or the edge avalance.
Although the transient-voltage problem may seem critical, there
are precautions that can be taken to minimize it. The use of RC
snubbers in parallel with the triac can reduce the rate of imposed
transients.
This arrangement is most effective for fast rising, shortduration line disturbances.
For critical applications. the use of a
voltage-clipping device in addition to an RC snubber effectively
suppresses both the rate of rise and magnitude of line-generated
transients.
are often required to support high voltages under high temperature

conditions. The imposed voltages create a field at the junction interface, and the increased temperature releases additional surface ions.
Should the field concentrate the additional surface charge and allow
it to migrate into the gate region. non-gated turn-on may occur. Most
manufacturers realize that the gate region must be terminated for
high voltage/temperature
operation, and a shunt resistance is built
into the triac pellet during fabrication. This shunt reduces the immunity of the triac to non-gated turn-on. Additional reliability can
be gained by operating the triac under less severe voltage/temperature
conditions.
Another type of transient particularly prevalent in the area of

inductive loads. and often overlooked, is the circuit-induced transient.
Consider an inductive load in series with a triac and RC snubber network which also includes a switch for line-voltage interruption. With
thc triac in the off state. a leakage current nows which is a function
of the characteristics of the load, the RC snubber network, and triac
leakage. If the switch is momentarily opened when the triac is off,
thcn a voltage transient (E = Ldi/dt) is generated which can exceed
the voltage rating of the triac, cause non-gated turn-on and abrupt
cnergy transfer: and may result in damage to the triac. Again, the
proper selection of RC-network components and voltage-clipping device will suppress the circuit-induced transient to a level compatible
with the voltage rating of the triac.
One of the features that has made thyristors the work-horses of the
power semiconductor industry is their ability to absorb in-rush currents many times in excess of their steady-state ratings. This unique
feature results from the regenerative action of the thyristor, an action
which maintains the internal beta at a level such that. under in-rush
conditions, the charge density is equally distributed over the entire
triac pellet. The equal charge distribution assures the presentation of
a low impedance to the in-rush current. Each manufacturer clearly
rates device surge capability from single cycle to multiple cycles.
Since this rating cannot be exceeded repeatedly. care should be
exercised in the actual application to provide a sufficient safety
margin between the published ratings and the actual circuit in-rush
currents.
The term "turn-off time" is not associated with triacs since triacs
arc bidirectional, and reverse voltage is nothing more than a forward
voltage to one-half of the triac chip. A new term, "critical-rate-ofrise-of-coml1lutation-voltage",
is used with triacs. The term describes
the ability of the triac to turn off as the current passes through zero,
or com mutates. One must remember that the triac is a current-dependent device: current is injected into the gate to turn the device
on, and current must be removed or allowed to pass through zero for
turn-off regardless of what the source-voltage poLarity is. Commutating dv/dt is less critical with resistive loads and most important
with inductive loads. Consider an inductive load in which the load
current lags the source voltage by a phase angle O. As pointed out,
triac commutation occurs at zero current, whereas the source voltage

has some magnitude E. As the load current crosses the zero point,
a small reverse current is established as a result of the charge in the
n-type region. This charge, plus a displacement current (i = C'dv/dt)
resulting from the reapplied source voltage, can cause the triac to turn
on in the absence of a proper gate signal. A minimum commutating
dv/dt at rated current and at a specific operating case temperature
should be defined in all triac applications; the circuit designer can use
these specifications to choose an RC snubber network that will limit
the reapplied dv/dt to within ratings. Loss of triac control as a result
of commutating dv/dt does not degrade the characteristics of the
triac. Proper RC snubber network selections for worst-case conditions of load power factor, current, and voltage are easily made by
use of the charts shown in Fig.3.
power control. A comparison of SSR's with electromechanical

is given below.
relays
Life: An EMR physically makes and breaks load current, and the
relay contacts deteriorate with life.
SSR's: They have no moving parts, and may be designed to make
and break at zero current. Regardless of the design, the triac always breaks at zero current.
Contact Bounce: Inherent with an EMR - zero for SSR's.
RFI: Inherent with EMR's - dependent on SSR design.
AFI: ("audio-frequency"
interference). Terrible with EMR's, particularly when many relays are clacking about. Not noticeable
with SSR's.
Environment:
High humidity, corrosion, and explosive atmospheres usually dictates a sealed relay. SSR's may easily be polled.
Shock: The SSR is far supelior.
Input Logic: EMR's can be operated from low-level logic. SSR's
are design dependent, but offer complete versatility.
A simple triac control circuit, an ON/OFF circuit,

is shown in
Fig.4. With switch S I open, the triac is off and essentially zero current is applied to the load. Actually, there will be leakage-current
flow to the load; the amount of current is dependent on the applied
voltage and triac case temperature.
However, because the current is
very small (less than one milliampere) compared to'the load current,
it can be neglected in this and the following circuits. (In specific
applications in which leakage current may affect control it would
have to be considered.)
VALUES ON CURVES
ARE IN V/~s
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Before the advantages of SSR's are discussed, the types available

should be reviewed.
Two types of SSR are available: all solid-state and hybrids. The
solid-state class employs solid-state devices for both logic and triac
gating,
Hybrids generaHy use a reed relay for triac gating for ac
power control and so combine the electromechanical
with solid
state. In either class, the triac is used as the solid-state element for ac
To apply power to the load in Fig.4. switch S I is closed to provide

gate drive to the triac. Bias-resistor R I is of the order of 68 to 100
ohms and provides the initial gate drive during every half cycle of
applied voltage. The power consumption of R I is very low 0/4 to
1/2 watt), because, when the triac is in the ON state, R I is in parallel
with the ON-state voltage of approximately 1.5 volts. This method
of triac triggering, calleq anode firing, is an effective way of triggering
because it uses the source voltage as a .source of gate-current drive.
Maximum gate current is available for triac turn-on at peak line voltage until the device goes to the low-impedance state. In this state
the current in R I is reduced by the forward voltage drop. In effect,
bias resistor R 1 is utilized only during the initial turn-on of the triac,
or for approximately two microseconds.
In a typical application,
switch S I would be replaced by a relay, and power control would be
transferred by means of low-level-current relay contacts.
For control applications which require that variable power be delivered to a load, an inexpensive RC phase-control circuit is best.
Fig.S shows the basic triac-diac control circuit with the triac connected in series with the load. During the beginning of each half cycle
may be used with an ON/OFF-type control or as a proportional control depending on the degree of regulation required. A simple, inexpensive, ON/OFF temperature controller is shown in Fig.7; a review
of the functional block diagram of the zero-voltage-switch, Fig.6, will
help in understanding the circuit. For every zero-voltage crossing,
a zero crossing pulse is generated and directed to the triac gating circuit. If there is a demand for heat, the differential amplifier is in the
open state, the triac gating circuit is open, and the triac is turned on
at every zero-voltage crossing. When the demand for heat is satisfied, the differential amplifier is in the closed state; this inhibits the
triac gating circuit and removes any further gate drive to the triac.
Therefore, the key to the operation of this circuit is in the state of
the differential amplifier. One side of the differential amplifier is
biased to a reference voltage VR, and the other side is biased to a
voltage Vs which is dependent on a variable potentiometer setting
and sensing resistor. As a result, whenever the bias voltage VS ex
ceeds the reference voltage VR, the gating circuit is open and the
triac is turned on for each zero-voltage crossing.
The characteristics of an ON/OFF controller are well known; i.e., there are significant thermal overshoots and undershoots which result in a dif ..
the triac is in the OFF state; as a result. the entire line voltage is impressed across it. Because the triac is in parallel with the potentiometer and capacitor, the voltage across the triac drives the current
through the potentiometer
and charges the capacitor.
When the
capacitor voltage reaches the breakover voltage of the diac, VSO,
the capacitor discharges through the triac gate and turns it on. The
line voltage is then transferred from the triac to the load for the remainder df that half cycle. This sequence is repeated for every half
cycle of either polarity.
If the potentiometer resistance is reduced,
the capacitor charges more rapidly. the VBO of tile diac is reached
earlier in the cycle, and the power applied to the load is increased.
If the potentiometer
resistance is increased, triggering occurs later
and load power is reduced. The main disadvantage of this circuit is
that it produces RFI.
Although the basic light-control circuit opcrall'S with the component arrangement shown in Fig.5. additional components and
sections are usually added to reducl' hysteresis effects. extend the
effective range of power control. and suppress radio-frequency
interference.
A zero-voltage-switch. Fig.6. synchronized for line-pulse generation, in combination with a triac. is particularly wdl suited for temperature-control
applications.
The zero-voltage-switch/triac
circuit
ferentiJI temperature above and below the reference temperature.

The magnitude of the differential temperature is dependent on the
mass of the heater and the time constant of the sensing element.
For precise temperature control, the technique of proportional
control with synchronous switching is introduced. The proportional
control differs from the ON/OFF control in that it allows a specified
percentage of power (duty cycle) to be supplied to the load with a
finite off time that. in turn, allows the heating element to "catch up"
as a result of thermal lag. In effect. this scheme provides "anticipator control."
Again, the key to circuit operation is in the state of
the differential amplifier.
The design engineer often must provide dcto-ac isolation. Complete isolation can be achieved by reed relays, pulse transformers, 'and
light-activated devices.
Selection of anyone
of these three approaches depends on the dc logic design and component economics.
Fig.8 (a) shows a reed relay and transistor drive circuit which is effective in triac gating, although it does have moving parts. Fig.8 (b)
uses a pulse transformer for isolation, and requires a form of clock
pulse that can be transferred to the triac gate. In some applications,
clock pulses may already be available; therefore the pulse-transformer
approach is economical.
This approach requires more components
than that of Fig.8 (a), but it has no moving parts. The last approach,
and, at present,
activated device,
triac gating. The
transistor which,
tional integrated
switch application.
probably the most expensive one, uses a lightsuch as the GaAs infrared (lR) emitter, to initiate
light-activated device is coupled to a photosensitive
when turned on, provides inhibit logic for addicircuits or, as in Fig. 8 (c), for a zero-voltage-
This paper has illuminated some of those areas most misunderstood or considered as problem areas in the application of triacs. The
designer who thoroughly understands the characteristics and limit-
REED
SWITCH
+~\(
"
II
ations, but most of all the advantages, of triacs, will have at his disposal a device that he can use to design power controllers that operate
satisfactorily not only in normal applications, but also in severe
physical and electrical environments.
The triac has already proven
to be a true power-semiconductor
device, and is widely used in both
commercial and industrial applications; restrictions on triac use in
military applications, particularly in 400-Hz power systems, are
gradually being lifted. It is inevitable, then, that the triac will evolve
as the basic building block for ac power control in power-controller
systems.
OOC05LlD
Linear Integrated Circuits
Solid State
Division
Features and Applications of

RCA Integrated-Circuit Zero-Voltage Switches
(CA3058, CA3059, and CA3079)
RCA-CA3058, CA3059 and CA3079 zero-voltage switches

are monolithic integrated circuits designed primarily for use as
trigger circuits for thyristors in many highly diverse ac
power-control
and power-switching
applications.
These
integrated-circuit switches operate from an ac input voltage of
24, 120,208 to 230, or 277 volts at 50,60, or 400 Hz.
The CA3059 and CA3079 are supplied in a 14terminal
dual-in-line plastic package. The CA3058 is supplied in a
14-terminal dual-in-line ceramic package. The electrical and
physical characteristics of each type are detailed in RCA Data
Bulletin File No. 490.
RCA zero-voltage switches (ZVS) are particularly well
suited for use as thyristor trigger circuits. These switches
trigger the thyristors
at zero-voltage points in the
supply-voltage cycle. Consequently, transient load-current
surges and radio-frequency interference (RFI) are substantially
reduced. In addition, use of the zero-voltage switches also
reduces the rate of change of on-state current (di/dt) in the
thyristor being triggered, an important consideration in the
operation of thyristors. These switches can be adapted for use
in a variety of control functions by use of an internal
differential comparator to detect the difference between two
externally developed voltages. In addition, the availability of
numerous terminal connections to internal circuit points
greatly increases circuit flexibility and further expands the
types of ac power-control applications to which these
integrated circuits may be adapted. The excellent versatility of
the zero-voltage switches is demonstrated by the fact that
these circuits have been used to prOVide transient-free
temperature
control in self-cleaning ovens, to control
gun.muzzle temperature in low-temperature environments, to
prOVide sequential switching of heating elements in warm-air
furnaces, to switch traffic signal lights at street intersections,
and to effect other widely different ac powercontrol
functions.
RCA zero-voltage switches are multistage circuits that

employ a diode limiter, a zero-crossing (threshold) detector, an
on-off sensing amplifier (differential comparator), and a

Darlington output driver (thyristor gating circuit) to provide
the basic switching action. The dc operating voltages for these
stages is provided by an internal power supply that has
sufficient current capability to drive external circuit elements,
such as transistors and other integrated circuits. An important
feature of the zero-voltage switches is that the output trigger
pulses can be applied directly to the gate of a triac or a silicon
controlled rectifier (SCR). The CA3058 and CA3059 also
feature an interlock (protection) circuit that inhibits the
application of these pulses to the thyristor in the event that
the external sensor should be inadvertently opened or shorted.
An external inhibit connection (terminal No. I) is also
available so that an external signal can be used to inhibit the
output drive. This feature is not included in the CA3079;
otherwise, the three integratedcircuit zero-voltage switches are
electrically identical.
Over-all Circuit
Operation
Fig. I shows the functional interrelation of the zero-voltage

switch, the external sensor, th~ thyristor being triggered, and
the load elements in an on-off type of ac power-control
system. As shown, each of the zero-voltage switches
incorporates four functional blocks as follows:
(I) Limiter-Power Supply - Permits operation
directly
from an ac line.
(2) Differential On/Off Sensing Amplifier - Tests the
condition of external sensors or command signals. Hysteresis
or proportional-control capability may easily be implemented
in this section.
(3) Zero-Crossing Detector - Synchronizes
the output
pulses of the circuit at the time when the ac cycle is at a
zero-voltage point and thereby eliminates radio-frequency
inteference (RFI) when used with resistive loads.
(4) Triac Gating Circuit - Provides high-current pulses to
the gate of the power-controlling thyristor.
In addition, the CA3058 and CA3059 prOVide the following
important aUXiliary functions (shown in Fig. I):
(I) A built-in protection circuit that may be actuated to
remove drive from the triac if the sensor opens or shorts.
overriding the action of the zero-crossing detector. 1hIS

override is accomplished by connecting terminal 12 to
terminal 7. Gate current to the thyristor is continuous when
terminal 13 is positive with respect to terminal 9.
Fig. 2 shows the detailed circuit diagram for the
integrated-circuit zero-voltage switches. (The diagrams shown
in Figs. I and 2 are representative of all three RCA
zero-voltage switches, i.e., the CA3058, CA3059, and CA3079;
the shaded areas indicate the circuitry that is not included in
the CA3079.)
AC Input Voltag:'
(50/60 or 400 Hzl
Dissipation Rating
for RS
Input Series
Resistor (RS)
V AC
krl
24
120
208/230
277
0.5
2
4
5
10
20
25
Ie"
r----'R;"""-
'K
I
I
07
I
I
FOR DC MODE
OR400-Hz
OPERATION
---------
PI3
0,
0,
I
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I,
I
L __
ALL
NOTE:
RESISTANCE
VALUES
CIRCUITRY,WITHIN
Ale:
INTERNAL
RESTRICTION
ReA (A3059
I~EGRAT!D~C~T
ARE
SHADED
IN OHMS
f AII~p~~fE
AREAS,NOT
INCLUDED
CONNECTION -- 00 NOT USE

APPLIES
The limiter stage of the zero-voltage switch clips the

incoming ac line voltage to approximately 8 volts. This signal
is then applied to the zero-voltage-cro-ssing detector, which
generates an output pulse each time the line voltage passes
through zero. The limiter output is also applied to a rectifying
diode and an external capacitor, CF, that comprise the dc
power supply. The power supply prOVides approximately
6 volts as the VCC supply to the other stages of the
zero-voltage switch. The on-off sensing amplifier is basically a
differential comparator. The thyristor gating circuit contains a
driver for direct triac triggering. The gating circuit is enabled
when all the inputs are at a "high" voltage, i.e., the line voltage
must be approximately zero volts, the sensing-amplifier output
must be "high," the external voltage to terminal J must be a
logical "0", and, for the CA3058 and CA3059, the output of
the fail-safe circuit must be "high." Under these conditions,
the thyristor (triac or SCR) is triggered when the line voltage is
essentially zero volts.
ONLY
TO CA3079J
IN
{TERMINAL
CA3079
--
Thyristor Triggering Circuits

The diodes 0 I and 02 in Fig. 2 form a symmetrical clamp
that limits the voltages on the chip to 8 volts; the diodes 07
and 013 form a half-wave rectifier that develops a positive
voltage on the external storage capacitor, CF.
shown in Fig. I, therefore, the output is a narrow pulse which

is approximately centered about the zero-voltage time in the
cycle, as shown in Fig. 3. In some applications, however,
The output pulses used to trigger the power-switching

thyristor are actually developed by the zero-crossing detector
and the thyristor gating circuit. The zero-crossing detector
consists of diodes 03 through 06, transistor Q I, and the
associated resistors shown in Fig. 2. Transistors QI and Q6
through Q9 and the associated resistors comprise the thyristor
gating circuit and output driver. These circuits generate the
output pulses when the ac input is at a zero-voltage point so
that RFI is virtually eliminated when the zero-voltage switch
and thyristor are used with resistive loads.
The operation of the zero-crossing detector and thyristor
gating circuit can be explained more easily if the on state (i.e.,
the operating state in which current is being delivered to the
thyristor gate through terminal 4) is considered as the
operating condition of the gating circuit. Other circuit
elements in the zero-voltage switch inhibit the gating circuit
unless certain conditions are met, as explained later.
In the on state of the thyristor gating circuit, transistors Qs
and Q9 are conducting, transistor Q7 is off, and transistor Q6
is on. Any action that turns on transistor Q7 removes the drive
from transistor Qs and thereby turns off the thyristor.
Transistor Q7 may be turned on directly by application of a
minimum
of 1.2 volts at 10 microamperes
to the
external-inhibit input, terminal I. (If a voltage of more than
1.5 volts is available, an external resistance must be added in
series with terminal I to limit the current to I milliampere.)
Diode 010 isolates the base of transistor Q7 from other signals
when an external-inhibit signal is applied so that this signal is
the highest priority command for normal operation. (Although
grounding of terminal6
creates a higher-priority inhibit
function, this level is not compatible with normal OTL or TTL
logic levels.) Transistor Q7 may also be activated by turning
off transistor Q6 to allow current flow from the power supply
through resistor R7 and diode 010 into the base of Q7
Transistor Q6 is normally maintained in conduction by current
that flows into its base through resistor R2 and diodes Os and
09 when transistor Q I is off.
Transistor Q I is a portion of the zero-crossing detector.
When the voltage at terminal 5 is greater than +3 volts, current
can flow through resistor R I, diode 06, the base-to-emitter
junction of transistor QI, and diode 04 to terminal 7 to turn
on QI. This action inhibits the delivery of a gate-drive output
signal at terminal 4. For negative voltages at terminal 5 that
have magnitudes greater than 3 volts, the current flows
through diode Os, the emitter-to-base junction of transistor
QI, diode 03, and resistor R1, and again turns on transistor
QI. Transistor QI is off only when the voltage at terminal 5 is
less than the threshold voltage of approximately 2 volts.
When the integrated-circuit zero-voltage switch is connected as
The latching cunent is the minimum current required to sustain
conduction immediately after the thyristor is switched from the off
to the on state and the gate signal is removed.
particularly those that use either slightly inductive or

low-power loads, the thyristor load current does not reach the
latching-current value* by the end of this pulse. An external
capacitor Cx connected between terminal 5 and 7, as shown in
Fig. 4, can be used to delay the pulse to accommodate such
loads. The amount of pulse stretching and delay is shown in
Figs. 5(a) and 5(b).
Continuous gate current can be obtained if terminal 12 is

connected to terminal 7 to disable the zero-crossing detector.
In this mode, transistor Q 1 is always off. This mode of
operation is useful when comparator operation is desired or
when inductive loads must be switched. (If the capacitance in
the load circuit is low, most RFI is eliminated.) Care must be
taken to avoid overloading of the internal power supply in this
mode. A sensitive-gate thyristor should be used, anda resistor
should be placed between terminal 4 and the gate of the
thyristor to limit the current, as pointed out later under
Special Application Considerations.
Fig. 6 indicates the timing relationship between the line
voltage and the zero-voltage- switch output pulses. At 60 Hz,
the pulse is typically lOa microseconds wide; at 400 Hz, the
pulse width is typically 12 microseconds. In the basic circuit
shown, when the de logic signal is "high", the output is
disabled; when it is "low", the gate pulses are enabled.
120 V RMS, 60-Hz
OPERATION
..
300
I
z
o
Ip
S200
/
'"
-'
"
0W
100
(POSI"'~E d'l/d,l
/"
....-
I'N(NEG~""'E
d~/d'~
-- -
~
f'
001
0.02
0.03
004
EXTERNAL
005
CAPACITANCE
006
007
008
009
-IF
In the circuit shown in Fig. I, the voltage at terminal 9 is

derived from the supply by connection of terminals 10 and II
to form a precision voltage divider. This divider forms one side
of a transducer bridge, and the potentiometer Rp and the
negative-tern perature-coefficient (NTC) sensor form the other
side. At low temperatures, the high resistance of the sensor
causes terminal 13 to be positive with respect to terminal 9 so
that the thyristor fires on every half-cycle, and power is
applied to the load. As the temperature increases, the sensor
resistance decreases until a balance is reached, and V 13
approaches V 9. At this point, the transistor pair Q2 -Q4 turns
on and inhibits any further pulses. The controlled temperature
is adjusted by variation of the value of the potentiometer Rp.
For cooling service, either the positions of Rp and the sensor
may be reversed or terminals 9 and 13 may be interchanged.
(a)
LINEA-T-f\
V': \
IIOLTAGf~:
I
I
Fig. ,5 - Curves showing effect of external capacitance on (a) the total

output-pulse duration, and (b) the time from zero crossing to
the end of the pulse.
On-Off Sensing Amplifier

The discussion thus far has considered only cases in which
pulses are present all the time or not at all. The differential
sense amplifier consisting of transistors Q2, Q3, Q4, and Qs
(shown in Fig. 2) makes the zero-voltage switch a flexible
power-control circuit. The transistor pairs Q2-Q4 and Q3-QS
form a high-beta composite p-n-p transistors in which the
emitters of transistors Q4 and Qs act as the collectors of the
composite devices. These two composite transistors are
connected as a differential amplifier with resistor R3 acting as
a constant-current source. The relative current flow in the two
"collectors" is a function of the difference in voltage between
the bases of transistors Q2 and Q3. Therefore, when
terminal 13 is more positive than terminal 9, little or no
current flows in the "collector" of the transistor pair Q2-Q4.
When terminal 13 is negative with respect to terminal 9, most
of the current flows through that path, and none in terminal 8.
When current flows in the transistor pair Q2-Q4, the path is
from the supply through R3, through the transistor pair
Q2 -Q4, through the base-emitter junction of transistor QI , and
finally through the diode D4 to terminal 7. Therefore, when
VI3 is equal to or more negative than V9, transistor QI is on,
and the output is inhibited.
I
I
I
I
:.'
"
'
,
,
rn
The low bias current of the sensing amplifier permits

operation with sensor impedances of up to 0.1 megohm at
balance without introduction of substantial error (i.e., greater
than 5 per cent). The error may be reduced if the internal
bridge elements, resistors ~ and RS, are not used, but are
replaced with resistances which equal the sensor impedance.
The minimum value of sensor impedance is restricted by the
currellt drain on the internal power supply. Operation of the
zero-voltage switch with low-impedance sensors is discussed
later under Special Application Considerations. The voltage
applied to terminal 13 must be greater than 1.8 volts at all
times to assure proper operation.
Protection Circuit
A special feature of the CA3058 and CA3059 zero-voltage
switches is the inclusion of an interlock type of circuit. This
circuit removes power from the load by interrupting the
thyristor gate drive if the sensor either shorts or opens.
However, use of this circuit places certain constraints upon the
user. Specifically, effective protection-circuit
operation is
dependent upon the following conditions:
(I) The circuit configuration of Fig. I is used, with an
internal supply, no external load on the supply, and
terminal 14 connected to terminal 13.
(2) The value of potentiometer Rp and of the sensor
resistance must be between 2000 ohms and 0.1 megohm.
(3) The ratio of sensor resistance and Rp must be greater
than 0.33 and less than 3.0 for all normal conditions. (If either
of these ratios is not met with an unmodified sensor, a series
resistor or a shunt resistor must be added to avoid undesired
activation of the circuit.)
The protective feature may be applied to other systems
when operation of the circuit is understood. The protection
circuit consists of diodes D 12 and D 15 and transistor Q 1o
Diode D12 activates the protection circuit if the sensor shown
in Fig. I shorts or its resistance drops too low in value, as
follows: Transistor Q6 is on during an output pulse so that the
junction
of diodes Ds and D 12 is 3 diode drops
(approximately 2 volts) above terminal 7. As long as V14 is
more positive or only 0.15 volt negative with respect to that
point, diode D12 does not conduct, and the circuit operates
normally. If the voltage at terminal 14 drops to I volt, the
anode of diode DS can have a potential of only 1.6 to
1.7 volts, and current does not flow through diodes DS and D9
and transistor Q6' The thyristor then turns off.
The actual threshold is approximately 1.2 volts at room
temperature, but decreases 4 millivolts per degree C at higher
temperatures. As the sensor resistance increases, the voltage at
terminal 14 rises toward the supply voltage. At a voltage of
approXimately 6 volts, the zener diode D 15 breaks down and
turns on transistor Q 10, which then turns off transistor Q6
and the thyristor. If the supply voltage is not at least 0.2 volt
more positive than the breakdown voltage of diode D 15,
activation of the protection circuit is not possible. For this
reason, loading the internal supply may cause this circuit to
malfunction, as may selection of the wrong external supply
voltage. Fig. 7 shows a gUide for the proper operation of the
protection circuit when an external supply is used with a
typical integrated-circuit zero-voltage switch.
SPECIAL APPLICATION CONSIDERATIONS
As pointed out previously, the RCA integrated-circuit
zero-voltage switches (CA3058, CA3059, and CA3079) are
exceptionally versatile units that can be adapted for use in a
wide-variety of power-control applications. Full advantage of
this versatility can be realized, however, only if the user has a
basic understanding of several fundamental considerations that
apply to certain types of applications of the zero-voltage
switches.
Operating-Power Options
Power to the zero-voltage switch may be derived directly
from the ac line, as shown in Fig. I, or from an external dc
power supply connected between terminals 2 and 7, as shown
in Fig. 8. When the zero-voltage switch is operated directly
from the ac line, a dropping resistor RS of 5,000 to
10,000 ohms must be connected in series with terminal 5 to
limit the current in the switch circuit. The optimum value for
this resistor is a function of the average current drawn from
the internal dc power supply, either by external circuit
elements or by the thyristor trigger circuits, as shown in Fig. 9.
The chart shown in Fig. I indicates the value and dissipation
rating of the resistor RS for ac line voltages of 24, 120,208 to
230, and 277 volts.
>
around the differential amplifier. Fig. II illustrates this

technique.
The tabular data in the figure lists the
recommended values of resistors R I and Rz for different
sensor impedances at the control point.
5.5
~
~
~
g
5
4.5
Half-Cycling
Effect
The method by which the zero-voltage switch senses the

zero crossing of the ac power results in a half-cycling
phenomenon at the control point. Fig. 10 illustrates this
phenomenon. The zero-voltage switch senses the zero-voltage
crossing every half-cycle, and an output, for example pulse
No.4, is produced to indicate the zero crossing. During the
remaining 8.3 milliseconds, however, the differential amplifier
in the zero-voltage switch may change state and inhibit any
further output pulses. The uncertainity
region of the
differential amplifier, therefore, prevents pulse No.5 from
triggering the triac during the negative excursion of the ac line
voltage.
--la.3m,!..
I
I
2
THERMISTOR
NTC
51(
"
R.
12K
12K
If a significant amount (greater than IO%) of controlled

hysteresis is required, then the circuit shown in Fig. 12 may be
employed. In this configuration, external transistor QI can be
used to prOVidean auxiliary limed-delay function.
~ {~I-ms,-J
120 \lAC
601'11
T[Mf
T""'o'
s"
.rc
T..,C"",,,STOR:f/
When a sensor with low sensitivity is used in the circuit, the

zero-voltage switch is very likely to operate in the linear mode.
In this mode, the output trigger current may be sufficient to
trigger the triac on the positive-going cycle, but insufficient to
trigger the device on the negative-going cycle of the triac
supply voltage. This effect introduces
a half-cycling
phenomenon, i.e., the triac is turned on during the positive
half-cycle and turned off during the negative half-cycle.
For applications that require complete elimination of

half-cycling without the addition of hysteresis, the circuit
shown in Fig. 13 may be employed. This circuit uses a
SENSITIVITY:
CIRCUIT
IS A CHANGE OF~ In
IN A 5Kn
SENSOR
CHANGES
CA3099E integrated-circuit programmable comparator with a

zero-volta~e switch. A block dia~ram of CA3099E is shown in
STATE WHEN THERE
Fig. 14. Because the CA3099E contains an integral flip-flop,

its output will be in either a "0" or "I" state. Consequently
the zero-voltage switch cannot operate in the linear mode, and
spurious half-cycling operation is prevented. When the
signal-input voltage at terminal 14 of the CA3099E is equal to
or less than the "low" reference voltage (LR), current flows
from the power supply through resistor R 1, and a logic "0" is
applied to terminal 13 of the zero-voltage switch. This
condition turns off the triac. The triac remains off until the
signal-input voltage rises to or exceeds the "high" reference
voltage (HR), thereby effecting a change in the state of the
flip-flop so that a logic "I" is applied to terminal 13 of the
zero-voltage switch, and triggers the triac on.
"Proportional
Control" Systems
The on-off nature of the control shown in Fig. I causes

some overshoot that leads to a definite steady-state error. The
addition of hysteresis adds further to this error factor.
However, the connections shown in Fig. 15(a) can be used to
add proportional control to the system. In this circuit, the
sense amplifier is connected as a free-running multivibrator. At
balance, the voltage at terminal 13 is much less than the
voltage at terminal 9. The output will be inhibited at all times
until the voltage at terminal 13 rises to the design differential
voltage between terminals 13 and 9; then proportional control
resumes. The voltage at terminal 13 is as shown in Fig. 15(b).
When this voltage is more positive than the threshold, power is
POSITIVE
SUPPLY VOLTAGE
FOR BIAS
SYSTEM (Vb I
INTERNAL
5~us~~~
i ....
(ISlAS)
OUTPUT
CURRENT
CONTROL
7
3
I
I
L __
C~A~
SINK"
OUTPUT
-----J I
__
5
UNREGULATED
INPUT
6
REGULATED
OUTPUT
V-
As in the case of the hysteresis circuitry described earlier,

some special applications may require more sophisticated
systems to achieve either very precise regions of control or
very long periods.
Zero-voltage switching control can be extended to
applications in which it is desirable to have constant control of
the temperature and a minimization of system hysteresis. A
closed-loop top-burner control in which the temperature of
the cooking utensil is sensed and maintained at a particular
value is a good example of such an application; the circuit for
this control is shown in Fig. 17. In this circuit, a unijunction
Fig. 15 - Use of the CA3058 or CA3059 in a typical heating control

with proportional
control:
fa) schematic diagram, and
fb) waveform of voltage at terminal 13.
applied to the load so that the duty cycle is approximately 50

per cent. With a 0.1 megohm sensor and values of Rp =
0.1 megohm, R2 = 10,000 ohms, and CEXT = 10 microfarads,
a period greater than 3 seconds is achieved. This period should
be much shorter than the thermal time constant of the system.
A change in the value of any of these elemen ts changes the
period, as shown in Fig. 16. As the resistance of the sensor
changes, the voltage on terminal 13 moves relative to V9. A
cooling sensor moves V 13 in a positive direction. The triac is
on for a larger portion of the pulse cycle and increases the
average power to the load.
oscillator is outboarded from the basic control by means of

the internal power supply of the zero-voltage switch. The
output of this ramp generator is applied to terminal 9 of the
zero-voltage switch and establishes a varied reference to the
differential amplifier. Therefore, gate pulses are applied to the
triac whenever the voltage at terminal 13 is greater than the
voltage at terminal 9. A varying duty cycle is established in
which the load is predominantly on with a cold sensor and
predominantly off with a hot sensor. For precise temperature
regulation, the time base of the ramp should be shorter than
the thermal time constant of the system but longer than the
period of the 60-Hz line. Fig. 18, which contains various
waveforms for the system of Fig. 17, indicates that a typical
variance of O.SoC might be expected at the sensor contact to
the utensil. Overshoot of the set temperature is minimized
with this approach, and scorching of any type is minimized.
VLOAD
I~OV
GO-Hz
';.":."-
Effect of Thyristor Load Characteristics

The zero-voltage switch is designed primarily to gate a
thyristor that switches a resistive load. Because the output
pulse supplied by the switch is of short duration, the latching
current of the triac becomes a significant factor in determining
whether other types of loads can be switched. (The
latching-current value determines whether the triac will remain
in conduction after the gate pulse is removed.) Provisions are
included in the zero-voltage switch to accommodate inductive
loads and low-power loads. For example, for loads that are less
than approximately 4 amperes rms or that are slightly
inductive, it is possible to retard the output pulse with respect
to the zero-voltage crossing by insertion of the capacitor Cx
from terminal 5 to terminal 7. The insertion of capacitor Cx
permits switching of triac loads that have a slight inductive
component and that are greater than approximately 200 watts
(for operation from an ac line voltage of 120 volts rms).
However, for loads less than 200 watts (for example,
70 watts), it is recommended that the user employ the
T2300B* sensitive-gate triac with the zero-voltage switch
because of the low latching-current requirement of this triac.
For loads that have a low power factor, such as a solenoid
valve, the user may operate the zero-voltage switch in the dc
mode. In this mode, terminal 12 is connected to terminal 7,
and the zero-crossing detector is inhibited. Whether a "high"
or "low" voltage is produced at terminal 4 is then dependent
only upon the state of the differential comparator within the
integrated-circuit zero-voltage switch, and not upon the zero
crossing of the incoming line voltage. Of course, in this mode
of operation, the zero-voltage switch no longer operates as a
zero-voltage switch. However, for many applications that
involve the switching of low-current inductive loads, the
amount of RFI generated can frequently be tolerated.
For switching of high-current inductive loads, which must
be turned on at zero line current, the triggering technique
employed
in the dual-output
over-under temperature
controller and the transient-free switch controller described
subsequently in this Note is recommended.
Switching of Inductive Loads
For proper driving of a thyristor in full-cycle operation,
gate drive must be applied soon after the voltage across the
device reverses. When resistive loads are used, this reversal
occurs as the line voltage reverses. With loads of other power
factors, however, it occurs as the current through the load
becomes zero and reverses.
There are several methods for sWitching an inductive load at
the proper time. If the power factor of the load is high (i.e., if
the load is only slightly inductive), the pulse may be delayed
by addition of a suitable capacitor between terminals 5 and 7,
as described previously. For highly inductive loads, however,
this method is not suitable, and different techniques must be
used.
If gate current is continuous, the triac automatically
commutates because drive is always present .vhen the voltage
reverses. This mode is established by connection of terminals 7
and 12. The zero-crossing detector is then disabled so that
current is supplied to the triac gate whenever called for by the
sensing amplifier. Although the RFI-eliminating function of

the zero-voltage switch is inhibited when the zero-crossing
detector is disabled, there is no problem if the load is highly
inductive because the current in the load cannot change
abruptly.
Circuits that use a sensitive-gate triac to shift the firing
point of the power triac by approximately 90 degrees have
been designed. If the primary load is inductive, this phase shift
corresponds to firing at zero current in the load. However,
changes in the power factor of the load or tolerances of
components will cause errors in this firing time.
The circuit
shown
in Fig. 19 uses a CA3086
integrated-circuit transistor array to detect the absence of load
current by sensing the voltage across the triac. The internal
zero-crossing detector is disabled by connection of terminal 12
to terminal 7, and control of the output is made through the
external inhibit input, terminal I. The circuit permits an
output only when the voltage at point A exceeds two VBE
drops, or 1.3 volts. When A is positive, transistors Q3 and Q4
conduct and reduce the voltage at terminal I below the inhibit
state. When A is negative, transistors Q t and Q2 conduct.
When the voltage at point A is less than 1.3 volts, neither of
the transistor pairs conducts; terminal I is then pulled positive
by the current in resistor R3, and the output in inhibited.
The circuit shown in Fig. 19 forms a pulse of gate current

and can supply high peak drive to power traics with low
average current drain on the internal supply. The gate pulse
will always last just long enough to latch the thyristor so that
disabled and initial turn-on occurs at random.

The gate pulse forms because the voltage at point A when
the thyristor is on is less than l.3 volts: therefore, the output
of the zero-voltage switch is inhibited, as described above. The
resistor divider R) and Rz should be selected to assure this
condition. When the triac is on, the voltage at point A is
approximately one-third of the instantaneous on-state voltage
(vr) of the thyristor. For most RCA thyristors, vr (max) is
less than 2 volts, and the divider shown is a conservative one.
When the load current passes through zero, the triac
commutates and turns off. Because the circuit is still being
driven by the line voltage, the current in the load attempts to
reverse, and voltage increases rapidly across the "turned-off'
triac. When this voltage exceeds 4 volts, one portion of the
CA3086 conducts and removes the inhibit signal to permit
application of gate drive. Turning the triac on causes the
Provision of Negative Gate Current

Triacs trigger with optimum sensitivity when the polarity of
the gate voltage and the voltage at the main terminal 2 are
similar (1+ and n- modes). Sensitivity is degraded when the
polarities are opposite (1- and JII+ modes). Although RCA
triacs are designed and specified to have the same sensitivity in
both rand
111+ modes, some other types have very poor
sensitivity in the JII+ condition. Because the zero-voltage
switch supplies positive gate pulses, it may not directly drive
some higher-current triacs of these other types.
The circuit shown in Fig.20(a) uses the negative-going
voltage at terminal 3 of the zero-voltage switch to supply a
negative gate pulse through a capacitor. The curve in
Fig. 20(b) shows the approximate peak gate current as a
function of gate voltage VG. Pulse width is approximately
80 microseconds.
Operation with Low-I mpedance Sensors
Although the zero-voltage switch can operate satisfactorily
with a wide range of sensors, sensitivity is reduced when
sensors with impedances greater than 20,000 ohms are used.
Typical sensitivity is one per cent for a SOOO-ohmsensor and
increases to three per cent for a O.l-megohm sensor.
Low-impedance sensors present a different problem. The
sensor bridge is connected across the internal power supply
and causes a current drain. A SOOO-ohm sensor with its
associated
SOOO-ohm series resistor draws less than
I milliampere. On the other hand, a 300-ohm sensor draws a
current of 8 to 10 milliampers from the power supply.
Fig. 21 shows the 600-ohm load line of a 300-ohm sensor
on a redrawn power-supply regulation curve for the
zero-voltage switch. When a I O,OOO-ohmseries resistor is used,
the voltage across the circuit is less than 3 volts and both
sensitivity and output current are significantly reduced. When
a SOOO-ohmseries resistor is used, the supply voltage is nearly
S volts, and operation is approximately normal. For more
consistent operation, however, a 4000-ohm series resistor is
recommended.
Fig. 20 - Use of rhe CA3058 or CA3059 to provide negative gate

pulses: (a) schematic diagram; (b) peak gate current (at
terminal 3) as a function of gate voltage.
Fig. 21 - Powersupply
regulation of the CA3058 or CA3059 with a
300-ohm sensor (600-ohm load) for two values of series
resistor.
Although positive-temperature-coefficient
(PTC) sensors
rated at 5 kilohms are available, the existing sensors in ovens
are usually of a much lower value. The circuit shown in Fig. 22
is offered to accommodate these inexpensive metal-wound
Further cycling depends on the voltage across the sensor.

Hence, very low values of sensor and potentiometer resistance
can be used in conjunction with the zero-voltage switch power
supply without causing adverse loading effects and impairing
system performance.
Interfacing Techniques
Fig. 24 shows a system diagram that illustrates the role of
the zero-voltage switch and thyristor as an interface between
the logic circuitry and the load. There are several basic
lOADS
AND
MECHANISMS
MOTORS
--+-
SOLENOIDS
IJlII
HEATERS
LAMPS
SENSORS
sensors. A schematic
diagram of the RCA CA3080
integrated-circuit operational transconductance amplifier used
in Fig. 22, is shown in Fig. 23. With an amplifier bias current,
IABe, of 100 microamperes, a forward transconductance of
2 milliohms is achieved in this configuration. The CA3080
switches when the voltage at terminal 2 exceeds the voltage at
terminal 3. This action allows the sink current, Is, to flow
from terminal 13 of the zero-voltage switch (the input
impedance to terminal 13 of the zero-voltage switch is
approximately 50 kilohms); gate pulses are no longer applied
to the triac because Q2 of the zero-voltage switch is on. Hence,
if the PTC sensor is cold, i.e., in the low resistance state, the
load is energized. When the temperature of the PTC sensor
increases to the desired temperature, the sensor enters the high
resistance state, the voltage on terminal 2 becomes greater
than that on terminal 3, and the triac switches the load off.
II
o---@-PHOTO-CELLS
---PTCI NTC
, THERMISTORS
LIMIT
SWITCHES
interfacing techniques. Fig.25(a) shows the direct input

technique. When the logic output transistor is switched from
the on state (saturated) to the off state, the load will be
turned on at the next zero-voltage crossing by means of the
interfacing zero-voltage switch and the triac. When the logic
output
transistor is switched back to the on state,
zero-crossing pulses from the zero-voltage switch to the triac
gate will immediately cease. Therefore, the load will be turned

off when the triac commutates off as the sine-wave load
current goes through zero. In this manner, both the turn-on
and turn-off conditions for the load are controlled.
off to on. The light sensor is connected to the differential

amplifier input of the zero-voltage switch, which senses the
change of impedance at a threshold level and switches the load
on as in Fig. 25(a).
When electrical isolation between the logic circuit and the

load is necessary, the isolated-input technique shown in
Fig. 25(b) is used. In the technique shown, optical coupling is
used to achieve the necessary isolation. The logic output
transistor switches the light-source portion of the isolator. The
light-sensor portion changes from a high impedance to a low
impedance when the logic output transistor is switched from
Sensor Isolation
In many applications, electrical isolation of the sensor from
the ac input line is desirable. Two common isolation
techniq1!es are shown in Fig. 26.
Transformer Isolation - In Fig. 26(a), a pulse transformer
is used to provide electrical isolation of the sensor from
incoming ac power lines. The pulse transformer T 1 isolates the
T,
PULSE
TRANSFORMER
"
25.2
VAC
11
T2
KNIGHT
54E -1421
(OR EQUIV)
SPRAGUE
t1Z12
(OR EOUIV.1
sensor from terminal No. I of the triac Y 1, and transformer

T2 isolates the CA3058 or CA3059 from the power lines.
Capacitor C 1 shifts the phase of the output pulse at terminal
No.4 in order to retard the gate pulse delivered to triac Y I to
compensate
for the small phase-shift introduced
by
transformer T 1.
Photocoupler Isolation - In Fig. 26(b), a photocoupler
provides electrical isolation of the sensor logic from the
incoming ac power lines. When a logic "I" is applied at the
input of the photocoupler, the triac controlling the load will
be turned on whenever the line voltage passes through zero.
When a logic "0" is applied to the photocoupler, the triac will
turn off and remain off until a logic" I " appears at the input
of the photocoupler.
TEMPERATURE
technique, less power is supplied to the load (reduced duty

cycle) as the error signal is reduced (sensed temperature
approaches the set temperature).
CONTROLLERS
Fig. 27
shows
a
triac
used
in
an
on-off
temperature-controller configuration. The triac is turned on at
zero voltage whenever the voltage Vs exceeds the reference
Before such a system is implemented, a time base is chosen
so that the on-time of the triac is varied within this time base.
The ratio of the on-to-off time of the triac within this time
interval depends on the thermal time constant of the system
and the selected temperature setting. Fig. 29 illustrates the
principle of proportional control. For this operation, power is
supplied to the load until the ramp voltage reaches a value
greater than the dc control signal supplied to the opposite side
of the differential amplifier. The triac then remains off for the
remainder of the time-base period. As a result, power is
"proportioned"
to the load in a direct relation to the heat
demanded by the system.
LEVEL ~
voltage Yr' The transfer characteristic of this system, shown in

Fig. 28(a), indicates significant thermal overshoots and
undershoots, a well-known characteristic of such a system. The
differential or hysteresis of this system, however, can be
further increased, if desired, by the addition of positive
feedback.
For
precise
temperature-control
applications,
the
proportional-control technique with synchronous switching is
employed. The transfer curve for this type of controller is
shown in Fig. 28(b). In this case, the duty cycle of the power
supplied to the load is varied with the demand for heat
reqUired and the thermal time constant (inertia) of the system.
For example, when the temperature setting is increased in an
on-off type of controller, full power (100 per cent duty cycle)
is supplied to the system. This effect results in significant
temperature excursions because there is no anticipatory circuit
to reduce the power gradually before the actual set
temperature is achieved. However, in a proportional control
50%
POWER
75%
POWER
OUTPUT
OUTPUT
LEVEL
LEVEL
~<i
g*
CDZ
For this application, a simple ramp generator can be

realized with a minimum number of active and passive
components. A ramp having good linearity is not required for
proportional operation because of the nonlinearity of the
thermal system and the closed-loop type of control. In the
circuit shown in Fig. 30, the ramp voltage is generated when
the capacitor C 1 charges through resistors RO and R 1. The
time base of the ramp is determined by resistors R2 and R),
capacitor C2, and the breakover voltage of the 03202U* diac.
10JLF
50 VDC
C, COMMON
PIN CONNECTIONS
REFER
ReA CA3058 OR CA3059
TO
solved by use of the sensitive-gate RCA-40526 triac. The high

sensitivity of this device (3 milliamperes maximum) and low
latching current (approximately
9 milliamperes)
permit
synchronous operation of the temperature-controller circuit.
In Fig. 32(a), it is apparent that, though the gate pulse Vg of
triac Y 1 has elapsed, triac Y2 is switched on by the current
through RL I. The low latching current of the RCA-40526
triac results in dissipation of only 2 watts in RL I, as opposed
to 10 to 20 watts when devices that have high latching
currents are used.
When the voltage across C2 reaches approximately 32 volts,

the diac switches and turns on the 2N697S transistor and
IN914 diodes. The capacitor C1 then discharges through the
collector-to-emitter junction of the transistor. This discharge
time is the retrace or flyback time of the ramp. The circuit
shown can generate ramp times ranging from 0.3 to
2.0 seconds through
adjustment
of R2. For precise
temperature regulation, the time base of the ramp should be
shorter than the thermal time constant of the system, but long
with respect to the period of the 60-Hz line voltage. Fig. 31
shows a triac connected for the proportional mode.
Fig. 32(a) shows a dual-output temperature controller that

drives two triacs. When the voltage Vs developed across the
temperature-sensing network exceeds the reference voltage
VRI, motor No. I turns on. When the voltage across the
network drops below the reference voltage VR2, motor No.2
turns on. Because the motors are inductive, the currents 1M1
Electric-Heat Application
For electric-heating
applications,
the RCA-2N5444
40-ampere triac and the zero-voltage switch constitute an
optimum pair. Such a combination proVides synchronous
switching and effectively replaces the heavy-duty contactors
which easily degrade as a result of pitting and wearout from
the switching transients. The salient features of the 2N5444
40-ampere triac are as follows:
(I) 300-ampere single-surge capability (for operation at

60-Hz),
(2) a typical gate sensitivity of 20 milliamperes in the [(+)
and m(+) modes,
(3) low on-state voltage of 1.5 volts maximum at
40 amperes, and
(4) available VOROM equal to 600 volts.
Fig.33
shows
the
circuit
diagram
of
a
synchronous-switching heat-staging controller that is used for
electric heating systems. Loads as heavy as 5 kilowatts are
switched sequentially at zero voltage to eliminate RFI and
prevent a dip in line voltage that would occur if the full
25 kilowatts were to be switched simultaneously.
Transistor Ql and Q4 are used as a constant-current source
to charge capacitor C in a linear manner. Transistor Q2 acts as a
buffer stage. When the thermostat is closed, a ramp voltage is
prOVided at output Eo. At approximately 3-second intervals,
each 5-kilowatt heating element is switched onto the power
system by its respective triac. When there is no further demand
for heat, the thermostat opens, and capacitor C discharges
through R, and R2 to cause each triac to turn off in the
reverse heating sequence. It should be noted that some
half-cycling occurs before the heating element is switched fully
on. This condition can be attributed to the inherent
dissymmetry of the triac and is further aggravated by the
slow-rising ramp voltage applied to one of the inputs. The
timing diagram in Fig.34 shows the turn-on and turn-off
sequence of the heating system being controlled.
Oven/Broiler Control
Zero-voltage switching is demonstrated in the oven control
circuit shown in Fig.35. In this circuit, a sensor element is
included in the oven to provide a closed-loop system for
accurate control of the oven temperature.
Seemingly, the basic method shown in Fig. 33 could be

modified to provide proportional control in which the number
of heating elements switched into the system, under any given
As shown in Fig. 35, the temperature of the oven can be

adjusted by means of potentiometer R I, which acts, together
with the sensor, as a voltage divider at terminal 13. The voltage
F,
RL,
RL2
thermal load, would be a function of the BTU's required by

the system or the temperature differential between an indoor
and outdoor sensor within the total system environment. That
is, the closing of the thermostat would not switch in all the
heating elements within a short time interval, which inevitably
results in undesired temperature excursions, but would switch
in only the number of heating elements reqUired to satisfy the
actual heat load.
RL3
RL.
RL5
MT2
120VAC
60Hz
MT,
1/16 A
F2
THERMOSTAT
TRANSISTORS
Q I .02 AND 04
ARE PART OF ReA -CA3096E
INTEGRATED-CIRCUIT N-P-N/P-N-P
TRANSISTOR
ARRAV
OR MANUAL I
SWITCH I
L
RCA
2N5444
at terminal 13 is compared to the fixed bias at terminal9

which is set by internal resislors R4 and Rs. When the oven is
cold and the resistance of the sensor is high, transistors Q2 and
Q4 are off, a pulse of gate current is applied to the triac, and
heat is applied to the oven. Conversely, as the desired
temperature is reached, the bias at terminal 13 turns the triac
off. The closed-loop feature then cycles the oven element on
and off to maintain the desired temperature to approximately
2C of the set value. Also, as has been noted, external
resistors between terminals 13 and 8, and 7 and 8, can be used
to vary this temperature and provide hysteresis. In Fig. II, a
circuit that provides approximately IO-per-cent hysteresis is

demonstrated.
In addition to allowing the selection of a hysteresis value,
the flexibility of the control circuit permits incorporation of
other features. A PTC sensor is readily used by interchanging
terminals 9 and 13 of the circuit shown in Fig. 35 and
substituting the PTC for the NTC sensor. In both cases, the
sensor element is directly returned to the system ground or
common, as is often desired. Terminal 9 can be connected by
external resistors to proVide for a variety of biasing, e.g., to
match a lower-resistance sensor for which the switching-point
voltage has been reduced to maintain the same sensor current.
To accommodate
the self-cleaning feature, external
switching, which enables both broiler and oven units to be
paralleled, can easily be incorporated in the design. Of course,
the potentiometer must be capable of a setting such that the
sensor, which must be characterized for the high, self-clean
temperature,
can monitor and establish control of the
high-temperature, self-clean mode. The ease with which this
self-clean mode can be added makes the over-all solid-state
systems cost-competitive with electromechanical systems of
comparable capability. In addition, the system incorporates
solid-state reliability while being neater, more easily calibrated,
and containing less-costly system wiring.
Integral-Cycle Temperature Controller (No half-cycling)
If a temperature controller which is completely devoid of
half-cycling and hysteresis is required, then the circuit shown
in Fig. 36 may be used. This type of circuit is essential for
applications in which half-cycling and the resultant de
component could cause overheating of a power transformer on
the utility lines.
012018
Y,
ReA
"'.-
S26000
5KW
LOAD
HEATER)
AL
**
FOR PROPORTIONAL OPERATION OPEN TERMINALS

SELECTED
FORMERLY
FORMERLY
FOR IGT=6
ReA 44003
RCA 40655
mA MAXIMUM
10,11, AND 13. AND CONNECT POSITIVE RAMP VOLTAGE TO TERMINAL
13
In the integral-cycle controller, when the temperature being

controlled is low, the resistance of the thermistor is high, and
an output signal at terminal 4 of zero volts is obtained. The
SCR (Y J), therefore, is turned off. The triac (Y 2) is then
triggered directly from the line on positive cycles of the ac
voltage. When Y2 is triggered and supplies power to the load
RL, capacitor C is charged to the peak of the input voltage.
When the ac line swings negative, capacitor C discharges
through the triac gate to trigger the triac on the negative
half-cycle. The diode-resistor-capacitor
"slaving network"
triggers the triac on negative half-cycle to provide only integral
cycles of ac power to the load.
Of course, the circuit shown in Fig. 37 can readily be

converted to a tme proportional integral-cycle temperature
controller simply by connection of a positive-going ramp
voltage to terminal9 (with terminals 10 and II open), as
previously discussed in this Note.
Thermocouple Temperature Control
Fig. 38 shows the CA3080A operating as a pre-amplifier for
the zero-voltage switch to form a zero-voltage switching circuit
for use with thermocouple sensors.
When the temperature being controlled reaches the desired

value, as determined by the thermistor, then a positive voltage
level appears at terminal 4 of the zero-voltage switch. The SCR
then starts to conduct at the beginning of the positive input
cycle to shunt the trigger current away from the gate of the
triac. The triac is then turned off. The cycle repeats when the
SCR is again turned OFF by the zero-voltage switch.
The circuit shown in Fig. 37 is similar to the configuration
in Fig. 36 except that the protection circuit incorporated in
the zero-voltage switch can be used. In this new circuit, the
NTC sensor is connected between terminals 7 and 13, and
transistor Qo inverts the signal output at terminal 4 to nullify
the phase reversal introduced by the SCR (Y 1)' The internal
power supply of the zero-voltage switch supplies bias current
to transistor Qo'
Y2
2NS444
2.2 K
5W
5K
5W
Y2
IK
112W
ReA"'c
Ie<'
J5VDC
526000
120VAC
60 H,
2N697S
IK
2W
5KW
LOAD
(HEATER)
RL
O.Sp.F
20CV DC
FOR PROPORTIONAL QPERATIOfll OPEN TERMINALS

**SELECTED
FOR IGT=6
mA MAXIMUM
-FORMERLY
ReA 44003
_FORMERLY
RCA 40655
9,10 AND II AND CONNECT POSTIVE
RAMP VOLTAGE
MT2
TO TERMINAL 9
Minimized generation of EMI/RFI using zero-voltage

switching techniques in conjunction with thyristors.
Elimination of high-voltage transients generated by
relay-contact bounce and contacts breaking inductive
loads, as shown in Fig. 39 ..
Compactness of the control system.
MACHINE CONTROL AND AUTOMATION
The earlier section on interfacing techniques indicated

several techniques of controlling ac loads through a logic
system. Many types of automatic equipment are not complex
enough or large enough to justify the cost of a flexible logic
system. A special circuit, designed only to meet the control
requirements of a particular machine, may prove more
economical. For example, consider the simple machine shown
in Fig. 39; for each revolution of the motor, the belt is
advanced a prescribed distance, and the strip is then punched.
The machine also has variable speed capability.
d.
The entire control system could be on one printed-circuit

board, and an over-all cost advantage would be achieved.
Fig. 41 is a timing diagram for the proposed solid-state
ZEROCROSSING
PULSE
60
The typical electromechanical control circuit for such a

machine might consist of a mechanical cambank driven by a
separate variable speed motor, a time delay relay, and a few
logic and power relays. Assuming use of industrial-grade
controls, the control system could get quite costly and large.
Of greater importance is the necessity to eliminate transients
generated each time a relay or switch energizes and deenergizes
the solenoid and motor. Fig. 40 shows such transients, which
might not affect the operation of this machine, but could
affect the more sensitive solid-state equipment operating in the
area.
A more desirable system would use triacs and zero-voltage
switching to incorporate the following advantages:
a.
Increased reliability and long life inherent in
solid-state devices as opposed to moving parts and
contacts associated with relays.
HZ"
machine control, and Fig.42 is the corresponding control

schematic. A variable-speed machine repetition rate pulse is set
up using either a unijunction oscillator or a transistor astable
multivibrator in conjunction with a 10-millisecond one-shot
multivibrator. The first zero-voltage switch in Fig. 42 is used
to synchronize the entire system to zero-voltage crossing. Its
output is inverted to simplify adaptation to the rest of the
circuit. The center zero-voltage switch is used as an interface
for the photo-cell, to control one revolution of the motor. The
gate drive to the motor triac is continuous dc, starting at zero
voltage crossing. The motor is initiated when both the machine
rate pulse and the zero-voltage sync are at low voltage. The
bottom zero-voltage switch acts as a time-delay for pulsing the
solenoid. The inhibit input, terminal 1, is used to assure that
the solenoid will not be operated while the motor is running.
The time delay can be adjusted by varying the reference level
(50K potentiometer) at terminal 13 relative to the capacitor
charging to that level on terminal 9. The capacitor is reset by
the SCR during the motor operation. The gate drive to the
solenoid triac is direct current. Direct current is used to trigger
both the motor and solenoid triacs because it is the most
desirable means of switching a triac into an inductive load. The
output of the zero-voltage switch will be continuous dc by
connecting terminal 12 to common. The output under dc
operation should be limited to 20 milliamperes. The motor
triac is synchronized to zero crossing because it is a
high-crurent inductive load and there is a chance of generating
RFI. The solenoid is a very low current inductive load, so
there would be little chance of generating RFI: therefore, the
initial triac turn-on can be random, which simplifies the
circuitry.
This example shows the versatility and advantages of the
RCA zero-voltage switch used in conjunction with triacs as
interfacing and control elements for machine control.
~:~
lom'4
.O-H'~
LINE
VOLTAGE
---
MACHINE
REP
RATE
I
I
r---16.67ms~
I
I
:
I
I
I
::::I
LAMP I
OUTPUT I
~
400-Hz
LINE
VOLTAGE
I
L
+-
r-
r--------
175
ms
+--
I
I
l!I~a.a.
IPJ r;:r<:r<:J
TIME DELAY
FUNCTION OR
ONE-SHOT
......j
e.-'&':/
a.
.11
~ARIABlE
[REFERENCE
ILEVElS
I
,
a. :
W 'I(J
a.
'<J
MULTIV18RATOR
400-Hz TRIAC APPLICATIONS
The increased complexity of aircraft control systems, and

the need for greater reliability than electromechanical
sWitching can offer, has led to the use of solid-state power
switching in aircraft. Because 400-Hz power is used almost
universally in aircraft systems, RCA offers a complete line of
triacs rated for 400-Hz applications. Use of the RCA
zero-voltage switch in conjunction with these 400-Hz triacs
results in a minimum of RFI, which is especially important in
aircraft.
Areas of application for 400-Hz triacs in aircraft include:
a.
Heater controls for food-warming ovens and for
windshield defrosters.
b.
Lighting controls for instrument panels and cabin
illumination
c.
Motor controls
d.
Solenoid controls
e.
Power-supply switches
Lamp dimming is a simple triac application
that
demonstrates an advantage of 400-Hz power over 60-Hz
power. Fig.43 shows the adjustment of lamp intensity by
phase control of the 60-Hz line voltage. RFI is generated by
the step functions of power each half cycle, requiring
extensive filtering. Fig. 44 shows a means of controlling power
to the lamp by the zero-voltage-switching technique. Use of
400-Hz power makes possible the elimination of complete or
half cycles within a period (typically 17.5 milliseconds)
without noticeable flicker. Fourteen different levels of lamp

intensity can be obtained in this manner. A line-synced ramp is
set up with the desired period and applied to terminal No.9 of
the differential amplifier within the zero-voltage switch, as
shown in Fig. 45. The other side of the differential amplifier
(terminal No. 13) uses a variable reference level, set by the
50K potentiometer. A change of the potentiometer setting
changes the lamp intensity.
In 400-Hz applications it may be necessary to widen and
shift the zero-voltage switch output pulse (which is typically
12 microseconds wide and centered on zero voltage crossing),
to assure that sufficient latching current is available. The 4K
resistor
(terminal
No. 12
to
common)
and
the
0.0 I 5-microfarad capacitor (terminal No.5 to common) are
used for this adjustment.
[fij115 V
400
H.
J<F
SOLID-STATE
TRAFFIC
FLASHER
Another application which illustrates the versatility of the

zero-voltage switch, when used with RCA thyristors, involves
switching traffic-control lamps. In this type of application, it is
essential that a triac withstand a current surge of the lamp load
on a continuous basis. This surge results from the difference
between the cold and hot resistance of the tungsten filament.
If it is assumed that triac turn-on is at 90 degrees from the
zero-voltage
crossing, the first current-surge
peak is
approximately ten times the peak steady-state value or fifteen
times the steady-state rms value. The second current-surge
peak is approximately four times the steady-state rms value.
When the triac randomly switches the lamp, the rate of

current rise di/dt is limited only by the source inductance. The
triac di/dt rating may be exceeded in some power systems. In
many cases, exceeding the rating results in excessive current
concentrations in a small area of the device which may
produce a hot spot and lead to device failure. Critical
applications of this nature require adequate drive to the triac
gate for fast turn-on. In this case, some inductance may be
required in the load circuit to reduce the initial magnitude of
the load current when the triac is passing through the active
region. Another method may be used which involves the
switching of the triac at zero line voltage. This method
involves the supply of pulses to the triac gate only during the
presence of zero voltage on the ac line.
Fig. 46 shows a circuit in which the lamp loads are switched
at zero line voltage. This approach reduces the initial di/dt,
decreases the required triac surge-current ratings, increases the
operating lamp life, and eliminates RFI problems. This circuit
consists of two triacs, a flip-flop (FF-!), the zero-voltage
switch, and a diac pulse generator. The flashing rate in this
circuit is controlled by potentiometer R, which provides
between 10 and 120 flashes per minute. The state of FFI
determines the triggering of triacs Y I or Y2 by the output
pulses at terminal 4 generaled by Ihe zero-crossing circuit.
Transistors QI and Q2 inhibit these pulses to the gates of the

triacs until the triacs turn on by the logical" I" (Vcc high)
state of the flip-flop.
The arrangement described can also be used for a
synchronous, sequential trafficcontroller system by addition
of one triac, one gating transistor, a "divide-by-three" logic
circuit, and modification in the design of the diac pulse
generator. Such a system can control the familiar red, amber,
and green traffic signals that are found at many intersections.
SYNCHRONOUS
LIGHT FLASHER
Fig. 47
shows
synchronous-switching
a
simplified
version
of
the
traffic light flasher shown in Fig. 46.
Flash rale is set by use of the curve shown in Fig. 16. If a more
precise flash rale is required, the ramp generator described
previously may be used. In this circuit, ZVSl is the master
control unit and ZVS2 is slaved to the output of ZVS1
through its inhibit terminal (terminal I). When power is
applied to lamp No. I, the voltage of terminal 6 on ZVSI is
high and ZVS2 is inhibited by the current in Rx. When lamp
No. I is off, ZVS2 is not inhibited, and triac Y2 can fire. The
power supplies operate in parallel. The on-off sensing amplifier
in ZVS2 is not used.
TRANSIENT-FREE
SWITCH CONTROLLERS
The zero-voltage switch can be used as a simple solid-state

switching device that permits ac currents to be turned on or
off with a minimum of electrical transients and circuit noise.
The circuit shown in Fig. 48 is connected so that, after the
control terminal 14 is opened, the electronic logic waits until
the power-line voltage reaches a zero crossing before power is
applied to the load ZL. Conversely, when the control terminals
are shorted, the load current continues until it reaches a zero
crossing. This circuit can switch a load at zero current whether
it is resistive or inductive.
The circuit shown in Fig. 49 is connected to provide the
opposite control logic to that of the circuit shown in Fig. 48.
That is, when the switch is closed, power is supplied to the
load, and when the switch is opened, power is removed from
the load.
In both configurations, the maximum rms load current that
can be switched depends on the rating of triac Y 2. If Y 2 is an
RCA-2N5444 triac, an rms current of 40 amperes can be
switched.
DIFFERENTIAL
COMPARATOR
FOR INDUSTRIAL
USE
Differential comparators have found widespread use as limit

detectors which compare two analog input signals and provide
a go/no-go, logic 'one" or logic "zero" output, depending
upon the relative magnitudes of these signals. Because the

signals are often at very low voltage levels and very accurate
discrimination is normally required between them, differential
comparators in many cases employ differential amplifiers as a
basic building block. However, in many industrial control
applications, a high-performance differential comparator is not
required. That is, high resolution, fast switching speed, and
similar features are not essential. The zero-voltage switch is
ideally suited for use in such applications. Connection of
terminal 12 to terminal 7 inhibits the zero-voltage threshold
detector of the zero-voltage switch, and the circuit becomes a
differential comparator.
Fig. 50 shows the circuit arrangement for use of the
zero-voltage switch as a differential comparator. In this
application, no external dc supply is required, as is the case
with
most
commercially
availabte
integrated-circuit
comparators; of course, the output-current capability of the
zero-voltage switch is reduced because the circuit is operating
in the dc mode. The 1000-ohm resistor RG, connected
between terminal 4 and the gate of the triac, limits the output
current to approximately 3 milliamperes.
When the zero-voltage switch is connected in the dc mode,
the drive current for terminal 4 can be determined from a
curve of the external load current as a function of dc voltage
from terminals 2 and 7. This curve is shown in the technical
bulletin for RCA integrated-circuit zero-voltage switches, File
No. 490. Of course, if additional output current is required, an
external dc supply may be connected between terminals 2
MTI
'2
T230IB
MT2
120VAC
60 H,
!
O.II'F
200
V DC
*IF
Y2'
FOR
SUFFICIENT
FORMERLY
EXAMPLE.
IGT
FOR
ReA 40691
IS A 4QAMPERE
Y2
TRIAC,
THEN
RJ MUST
BE
DECREASED
TO
SUPPLY
120VAC
60 Hz
I
O"~F
3J
200
V DC
* IF
Y2, FOR
SUFFICIENT
FORMERLY
EXAMPLE,
IS A 40-AMPERE
IGT
Y2
FOR
TRIAC,
RI MUST
BE
DECREASED
TO SUPPLY
ReA 40691
and 7, and resistor Rx (shown in Fig. 50) may be removed.

The chart below compares some of the operating
characteristics of the zero-voltage switch, when used as a
comparator, with a typical high-performance commercially
available integrated-circuit differential comparator.
Parameters
Sensitivity
Zero-Voltage
Switch
(Typical Values)
Typical
Integrated-Circuit
Comparator (710)
30mV
2 mV
Switching speed
(rise time)
Output drive
capability
POWER ONE-SHOT
CONTROL
Fig.51 shows a circuit which triggers a triac for one complete

half-cycle of either the positive or negative alternation of the
ac line voltage. In this circuit, triggering is initiated by the
push button PB-I, which produces triggering of the triac near
zero voltage even though the button is randomly depressed
during the ac cycle. The triac does not trigger again until the
button is released and again depressed. This type of logic is
required for the solenoid drive of electrically operated stapling
ZL
ANY POWER
FACTOR
1/3 CD4QQ7A
12
1/2 CD4QI3A
8
~FF-I
'J~C"'226}2
guns, impulse hammers, and the like, where load-current flow

is required for only one complete half-cycle. Such logic can
also be adapted to keyboard consoles in which contact bounce
produces transmission of erroneous information.
In the circuit of Fig. 51, before the button is depressed,
both flip-flop outputs are in the "zero" state. Transistor QG is
biased on by the output of flip-flop FF-I. The differential
comparator which is part of the zero-voltage switch is initially
biased to inhibit output pulses. When the push button is
depressed, pulses are generated, but the state of QG
determines the requirement for their supply to the triac gate.

The first pulse generated serves as a "framing pulse" and does
not trigger the triac but toggles FF-I. Transistor QG is then
turned off. The second pulse triggers the triac and FF-! which,
ill turn, toggles the second flip-flop FF-2. The output of FF-2
turns on transistor Q7, as shown in Fig. 52, which inhibits all
further output pulses. When the pushbutton is released, the
circuit resets itself until the process is repeated with the
button. Fig. 53 shows the timing diagram for the described
operating sequence.
f.:..!..
PIN 2
0
..,1:"I
I
-1
PIN
TRIAC
INHIBITED
ZERO
VOLTAGE
DETECTOR
PIN 12
II
TRIAC
liON
, I
: I
TURNS
PHASE CONTROL CIRCUIT

Fig. 54 shows a circuit using a CA3058 or CA3059
zero-voltage
switch
together
with
two
CA3086
integrated-circuit transistor arrays to form a phase-control
circuit. This circuit is specifically designed for speed control of
ac induction motors, but may also be used as a light dimmer.
The circuit, which can be operated from a line frequency of
50-Hz to 400-Hz, consists of a zero-voltage detector, a
line-synchronized ramp generator, a zero-current detector, and
a line-derived control circuit (i.e., the zero-voltage switch). The
zero-voltage detector (part of CA3086 No. I) and the ramp
generator (CA3086 No.2)
provide a line-synchronized
ramp-voltage output to terminal 13 of the zero-voltage switch.
The ramp voltage, which has a starting voltage of 1.8 volts,
starts to rise after the line voltage passes the zero point. The
ramp generator has an oscillation frequency of twice the
incoming line frequency. The slope of the ramp voltage can be
adjusted by variation of the resistance of the I-megohm
ramp-control potentiometer.
The output phase can be
controlled easily to provide 1800 firing of the triac by
programming the voltage at terminal 9 of the zero-voltage
switch. The basic operation of the zero-voltage switch driving a
thyristor with an inductive load was explained previously in
the discussion on switching of inductive loads.
Isolation of DC Logic Circuitry

As
explained
earlier
under
Special
Application
Considerations, isolation of the de logic circuitry* from the ac
line, the triac, and the load circuit is often desirable even in
many single-phase power-control. applications. In control
circuits for polyphase power systems, however, this type of
isolation is essential, because the common point of the de logic
circuitry cannot be referenced to a common line in all phases.
In the three-phase circuits described in this section,
photo-optic techniques (i.e., photo-coupled isolators) are used
to provide the electrical isolation of the de logic command
signal from the ac circuits and the load. The photo-coupled
isolators consist of an infrared light-emitting diode aimed at a
silicon photo transistor, coupled in a common package. The
light-emitting diode is the input section, and the photo
transistor is the output section. The two components provide a
voltage isolation typically of 1500 volts. Other isolation
techniques, such as pulse transformers, magnetoresistors, or
reed relays, can also be used with some circuit modifications.
Resistive Loads
Fig. 55 illustrates the basic phase relationships of a
balanced three-phase resistive load, such as may be used in
heater applications, in which the application of load power is
TRIAC POWER CONTROLS FOR

THREE-PHASE SYSTEMS
This section describes recommended configurations for
power-control circuits intended for use with both inductive
and resistive balanced three-phase loads. The specific design
requirements for each type of loading condition are discussed.
In
the
power-control
circuits
described,
the
integrated-circuit zero-voltage switch is used as the trigger
circuit for the power triacs. The following conditions are also
imposed in the design of the triac control circuits:
I. The load should be connected
in a three-wire
configuration with the triacs placed external to the load;
eiter delta or wye arrangements may be used. Four-wire
loads in wye configurations can be handled as three
independent single-phase systems. Delta configurations in
which a triac is connected within each phase rather than
in the incoming lines can also be handled as three
independent single-phase systems.
2. Only one logic command signal is available for the
control circuits. This signal must be electrically isolated
from the three-phase power system.
3. Three separate triac gating signals are required.
4. For operation with resistive loads, the zero-voltage
switching technique should be used to minimize any
radio-frequency
interference
(RFI) that may be
generated.
* The de logic circuitry provides the low-level electrical signal that
dictates the state of the load. For temperature controls, the de logic
circuitry includes a temperature sensor for feedback. The ReA
integrated-circuit zero-voltage switch, when operated in the de mode
with some additional circuitry. can replace the de logic circuitry for
temperature controls.
Fig. 55 -
Voltage phase relationship for a three-phase resistive load

when the application of load power is controlled by
zerovoltage switching: (a) voltage waveforms, (b) load-circuit
orientation of voltages. (The dashed lines indicate the normal
relationship of the phases under steady-state conditions. The
deviation at start-up and turn-off should be noted.)
---~_'~i _,
IcAI'Hn82
voltage.
2. A single phase of a wye configuration type of three-wire
system cannot be turned on.
3. Two phases must be turned on for initial starting of the
system. These two phases form a single-phase circuit
which is out of phase with both of its component phases.
The single-phase circuit leads one phase by 30 degrees
and lags the other phase by 30 degrees.
These conditions indicate that in order to maintain a
system in which no appreciable RFI is generated by the
switching action from initial starting through the steady-state
operating condition, the system must first be turned on, by
zero-voltage switching, as a single-phase circuit and then must
revert to synchronous three-phase operation.
Fig. 56 shows a simplified circuit configuration of a
three-phase
heater
control
that employs zero-voltage
synchronous switching in the steady-state operating condition,
with random starting. In this system, the logic command to
turn on the system is given when heat is required, and the
command to turn off the system is given when heat is not
required. Time proportioning heat control is also possible
through the use of logic commands.
~~~_
zero-voltage crossing relative to. their particular phase. A

balanced three-phase sensing circuit is set up with the three
zero-voltage switches each connected to a particular phase on
their common side (terminal 7) and referenced at their high
side (terminal 5), through the current-limiting resistors R4,
R5, and R6, to an established artificial neutral point. This
artificial neutral point is electrically equivalent to the
inaccessible neutral point of the wye type of three-wire load
and, therefore, is used to establish the desired phase
relationships. The same artificial neutral point is also used to
establish the proper phase relationships for a delta type of
three-wire load. Because only one triac <s pulsed on at a time,
the diodes (01, 02, and 03) are necessary to trigger the
opposite-polarity triac, and, in this way, to assure initial
latching-on of the system. The three resistors (Rl, R2, and
R3) are used for current limiting of the gate drive when the
opposite-polarity triac is triggered on by the line voltage.
In critical applications that require suppression of all
generated RFI, the circuit shown in Fig. 57 may be used. In
addition to synchronous steady-state operating conditions, this
circuit also incorporates a zero-voltage starting circuit. The
start-up
condition
is zero-voltage synchronized
to a
(' ~
\.
3-PHASE
RESI$TrVE
LOAD
(DEL TA OR WYEl
Fig.
56 - Simplified
employs
steady-state
diagram of a three-phase
zero-voltage
synchronous
operating conditions.
heater control
switching
in
that
the
single-phase, 2-wire, line-to-line circuit, comprised of phases A

and B. The logic command engages the single-phase start-up
zero-voltage
switch
and
three-phase
photo-coupled
isolators OC13, OCI4, OCI5 through the photo-eoupled
isolators OCII
and OCI2. The single-phase zero-voltage
switch, which is synchronized to phases A and B, starts the
system at zero voltage. As soon as start-up is accomplished, the
three photo-eoupled isolators OCI3, OCI4, and OCI5 take
control, and three-phase synchronization begins. When the
"logic command" is turned off, all control is ended, and the
triacs automatically turn off when the sine-wave current
decreases to zero. Once the first phase turns off, the other two
will turn off simultaneously, 900 later, as a single-phase
line-to-Iine circuit, as is apparent from Fig. 55.
Inductive loads
For inductive loads, zero-voltage turn-on is not generally
required because the inductive current cannot increase
instantaneously; therefore, the amount of RFI generated is
usually negligible. Also, because of the lagging nature of the
inductive current, the triacs cannot be pulse-fired at zero
voltage. There are several ways in which the zero-voltage
switch may be interfaced to a triac for inductive-load
applications. The most direct approach is to use the
zero-voltage switch in the dc mode, i.e., to provide a
continuous dc output instead of pulses at points of
zero-voltage crossing. This mode of operation is accomplished
by connection of terminal 12 to terminal 7, as shown in
Fig. 58. The output of the zero-voltage switch should also be
TO
3 PHASE
RESISTIVE
LOAD
(OELTA OR WYEl
Fig. 57 - Three-phase power

control
that employs
zero-voltage
synchronous switching both for steady-state operation and
for starting.
'--\-I
\
,
I
I
10K
PHOTO-COUPLED
ISOLATORS
limited to approximately 5 milliamperes in the dc mode by the

750-ohm series resistor. Use of a triac such as the T230 I 0* is
recommended for this application. Terminal 3 is connected to
terminal 2 to limit the steady-state power dissipation within
the zero-voltage switch. For most three-phase inductive load
applications, the current-handling capability of the 40692 triac
(2.5 amperes) is not sufficient. Therefore, the 40692 is used as
a trigger triac to turn on any other currently available power
triac that may be used. The trigger triac is used only to provide
trigger pulses to the gate of the power triac (one pulse per half
cycle); the power dissipation in this device, therefore, will be
minimal.
Simplified circuits using pulse transformers and reed relays
will also work quite satisfactorily in this type of application.
The RC networks across the three power triacs are used for
suppression of the commutating dv/dt when the circuit
operates into inductive loads.
Formerly ReA 40692
The specific integrated-circuits, triacs, SCR's, and rectifiers included in circuit diagrams shown in this Application Note are listed
below. Additional information on these devices can be obtained by requesting the applicable RCA data-bulletin file number.
~~
~~
~~.
~~
CA3058, CA3059, and CA3079

CA3099E
CA3086
CA3080
CD4007A,CD4013A
2N5444
T2800B (40668)
490
620
483
475
479
456
364
T2300B (40526)
T230lB (40691), T2301D (40692)
T64170 (40708)
S2600D (40655)
Dl20lB (44003)
D3202U (45412)
470
431
406
496
495
577
Note: Numbers in parenthesis (e.g. 40668) are former RCA type numbers.
Guide to ReA Solid-State Devices
TA147
TA148
lN539
lN540
550206
550206
255
255
3
3
RECT
RECT
TA2275
TA2276
2N2895
2N2896
550204
550204
517
517
143
143
PWR
PWR
2N2897
2N3375
2N2876
2N2857
2N918
550204
550205
550205
550205
550205
517
52
28
33
20
143
386
32
61
83
PWR
RF
RF
RF
RF
RF
TA149
TA1000
TA1003
TAl 004
TA1005
lNl095
lN547
1N440B
lN441B
lN442B
550206
550206
550206
550206
550206
255
255
252
252
252
3
3
5
5
5
RECT
RECT
RECT
RECT
RECT
TA2277
TA2307
TA2311
TA2333
TA2358
TA1006
TA1007
TA1008
TA1011
TA1012
lN443B
lN444B
lN445B
lN2859A
lN2860A
550206
550206
550206
550206
550206
252
252
252
265
265
5
5
5
91
91
RECT
RECT
RECT
RECT
RECT
TA2358A
TA2363
TA2388
TA2402A
TA2403A
2N3600
2N3839
2N3229
2N3054
2N3055
550205
550205
550205
550204
550204
20
69
45
45
102
83
229
50
527
524
RF
PWR
PWR
TA1013
TA1014
TA1015
TA1016
TA1049
lN2861A
1N2862A
lN2863A
lN2864A
lN248C
550206
550206
550206
550206
550206
265
265
265
265
287
91
91
91
91
6
RECT
RECT
RECT
RECT
RECT
TA2442
TA2444
TA2447
TA2458
TA2462
2N3870
2N3871
2N3872
2N3439
2N3118
550206
550206
550206
550204
550205
218
218
218
286
37
578
578
578
64
42
5CR
5CR
5CR
PWR
RF
TA1050
TA1051
TA1052
TA1053
TA1054
lN249C
lN250C
lN1195A
1N1196A
lNl197A
550206
550206
550206
550206
550206
287
287
287
287
287
6
6
6
6
6
RECT
RECT
RECT
RECT
RECT
TA2463
TA2468A
TA2469A
TA2470
TA2492
2N3119
2N3442
2N3441
2N3440
2N3263
550205
550204
550204
550204
550204
41
133
69
286
475
44
528
529
64
54
RF
PWR
PWR
PWR
PWR
TA1055
TA1066
TA 1076
TA1077
TA1078
lNl198A
lN2858A
lN1199A
lN1200A
lN1202A
550206
550206
550206
550206
550206
287
265
283
283
283
6
91
20
20
20
RECT
RECT
RECT
RECT
RECT
TA2493
TA2494
TA2495
TA2501
TA2509
2N3264
2N3265
2N3266
2N3: 02
2N3: 78
550204
550204
550204
550205
550204
475
475
475
48
443
54
54
54
56
299
PWR
PWR
PWR
RF
PWR
TA1079
TA1080
TA1081
TA1082
TA1085
lN1203A
lN1204A
lN1205A
lN1206A
lNl183A
550206
550206
550206
550206
550206
283
283
283
283
291
20
20
20
20
38
RECT
RECT
RECT
RECT
RECT
TA2509A
TA2510
TA2511
TA2512
TA2515
2N3l:79
2N3~83
2N3584
2N3585
2N690
550204
550204
550204
5~.204
5
206
443
304
304
304
225
299
138
138
138
96
PWR
PWR
PWR
PWR
5CR
TA1086
TA1087
TA1095
TA1096
TA1111
lNl184A
1N1186A
lN1197A
lN3194
lN3193
550206
550206
550206
550206
550206
291
291
287
294
294
38
38
6
41
41
RECT
RECT
RECT
RECT
RECT
TA2544
TA2551
TA2579
TA2580
TA2581
2N3772
2N3553
lN1341B
1N1342B
lN1344B
550204
550205
550206
550206
550206
141
52
281
281
281
525
386
58
58
58
PWR
RF
RECT
RECT
RECT
TA1112
TAl113
TA1120
TA1121
TA1122
lN3195
lN3196
lN3253
lN3254
lN3255
550206
550206
550206
550206
550206
294
294
294
294
294
41
41
41
41
41
RECT
RECT
RECT
RECT
RECT
TA2582
TA2583
TA2584
TA2585
TA2586
lN1345B
1N 1346B
lN1347B
1N 1348B
1N1341RB
550206
550206
550206
550206
550206
281
281
281
281
281
58
58
58
58
58
RECT
RECT
RECT
RECT
RECT
TA1123
TA1171
TA1172
TA1173
TAl174
1N3256
2N681
2N682
2N683
2N684
550206
550206
550206
550206
550206
294
225
225
225
225
41
96
96
96
96
RECT
5CR
5CR
5CR
5CR
TA2587
TA2588
TA2589
TA2590
TA2591
lN1342RB
lN1344RB
1N1345RB
lN1346RB
1N1347RB
550206
550206
550206
550206
550206
281
281
281
281
281
58
58
58
58
58
RECT
RECT
RECT
RECT
RECT
TA1175
TAl176
TAll77
TAl178
TAl179
2N685
2N686
2N687
2N688
2N689
550206
550206
550206
550206
550206
225
225
225
225
225
96
96
96
96
96
5CR
5CR
5CR
5CR
5CR
TA2592
TA2597
TA2598
TA2600
TA2606
1N1348RB
2N3528
2N3669
40282
2N3478
550206
550206
550206
550205
550205
281
144
203
279
60
58
114
116
68
77
RECT
5CR
5CR
RF
RF
TA1182
TA1204
TA1205
TA1206
TA1207
1N3563
2N1842A
2N1843A
2N1844A
2N1845A
550206
550206
550206
550206
550206
294
234
234
234
234
41
28
28
28
28
RECT
5CR
5CR
5CR
5CR
TA2616
TA2617
TA2618
TA2619
TA2620
2N3632
2N3529
2N3670
40280
40281
550205
550206
550206
550205
550205
52
144
203
275
279
386
114
116
301
68
RF
5CR
5CR
RF
RF
TA1208
TA1209
TA1210
TA1211
TA1212
2N1846A
2N1847A
2N1848A
2N1849A
2N1850A
550206
550206
550206
550206
550206
234
234
234
234
234
28
28
28
28
28
5CR
5CR
5CR
5CR
5CR
TA2621
TA2644
TA2645A
TA2650
TA2651
2N3668
3N140
2N3773
2N3771
2N4036
550206
550201
550204
550204
550204
203
667
149
141
410
116
285
526
525
216
5CR
M05/FET
PWR
PWR
PWR
TA1214
TA1215
TA1216
TA1217
TA1222
lN1187A
lN1188A
lNl189A
lNl190A
2N3228
550206
550206
550206
550206
550206
291
291
291
291
144
38
38
38
38
114
RECT
RECT
RECT
RECT
5CR
TA2653
TA2654
TA2655
TA2657
TA2657A
53700B
537000
53700M
40341
40340
550206
550206
550206
550205
550205
172
172
172
287
287
306
306
306
74
74
5CR
5CR
5CR
RF
RF
TAl225
TA1863
TA1883
TA1910A
TA1951
2N3525
2N1491
2N1492
2N697
2N1493
550206
550205
550205
550204
550205
144
24
24
493
24
114
10
10
16
10
5CR
RF
RF
PWR
RF
TA2658
TA2669
TA2669A
TA2670
TA2670A
2N3866
2N5039
2N5038
2N4037
2N4314
550205
550204
550204
550204
550204
73
461
461
410
410
80
698
698
216
216
RF
PWR
PWR
PWR
PWR
TA1986
TA2053
TA2053A
TA2053B
TA2192A
2N699
2N1613
2N1711
2N2102
2N2270
550204
550204
550204
550204
550204
495
498
503
498
513
22
106
26
106
24
PWR
PWR
PWR
PWR
PWR
TA2675
TA2676
TA2685
TA2692
TA2694
2N5016
T2700B
T27000
2N3733
2N3896
550205
550206
550206
550205
550206
96
62
62
64
218
255
351
351
72
578
RF
TRI
TRI
RF
5CR
504
RF
Developmental Number-to-Commercial
Dev. No.
Comm.
No.
DATA
BOOK
Vol. No.
Page
File
No.
Product
Line
Dev. No.
Number Cross-Reference Index

Comm.
No.
DATA
BOOK
Vol. No.
Page
File
No.
Product
line
TA2695
TA2696
TA2703A
TA2705
TA2707
2N3897
2N3898
40349
2N3873
2N3899
550206
550206
550204
550206
550206
218
218
26
218
218
578
578
88
578
578
5CR
5CR
PWR
5CR
5CR
TA5333
TA5334
TA5334
TA5345
TA5345A
CA3036
CA3035
CA3035V1
CA3028A
CA30288
550201
550201
550201
550201
550201
158
243
243
318
318
275
274
274
382
382
L1C
L1C
L1C
L1C
L1C
TA2710
TA2714
TA2733
TA2733A
TA2758
41024
2N4012
40319
40362
2N6093
550205
550205
550204
550204
550205
379
77
654
654
216
658
90
78
78
484
RF
RF
PWR
PWR
RF
TA5346
TA5347
TA5348
TA5349
TA5350
CA3015A
CA3010A
CA3030A
CA3029A
CA3016A
550201
550201
550201
550201
550201
89
89
89
89
89
310
310
310
310
310
L1C
L1C
L1C
L1C
L1C
TA2761
TA2765
TA2765A
TA2773
TA2774
40608
2N5239
2N5240
2N4101
2N4102
550205
550204
550204
550206
550206
291
373
373
144
144
356
321
321
114
114
RF
PWR
PWR
5CR
5CR
TA5351
TA5360
TA53618
TA5369
TA53718
CA3008A
CA3044
C04000A
CA3040
CA3062
550201
550201
550203
550201
550201
89
484
30
282
367
310
340
479
363
421
L1C
L1C
C05/Ma5
L1C
L1C
TA2775
TA2791
TA2792
TA2793
TA2800
2N4103
2N5102
2N4933
2N5070
2N5109
550206
550205
550205
550205
550205
203
113
92
100
118
116
279
249
268
281
5CR
RF
RF
RF
RF
TA5385CV
TA5401
TA5401
TA5402
TA5402
C04024AK
CA3038
CA3038A
CA3037
CA3037A
550203
550201
550201
550201
550201
120
80
89
80
89
503
316
310
316
310
C05/M05
L1C
L1C
L1C
L1C
TA2808
TA2809
TA2819
TA2819A
TA2827
2N4348
2N4347
2N5415
2N5416
2N5071
550204
550204
550204
550204
550205
149
133
292
292
105
526
528
336
336
269
PWR
PWR
PWR
PWR
RF
TA54558
TA54568
TA5457
TA5458
TA5460AV
C04001A
C04002A
CA3045
CA3046
C04016AK
550203
550203
550201
550201
550203
30
30
177
177
84
479
479
341
341
479
Ca5/Ma5
Ca5/Ma5
L1C
L1C
Ca5/Ma5
TA2828
TA2836
TA2837
TA2838
TA2839
2N4932
2N5441
2N5442
2N5444
2N5445
550205
550206
550206
550206
550206
92
55
55
55
55
249
593
593
593
593
RF
TRI
TRI
TRI
TRI
TA5507
TA5513
TA5516
TA5517C
TA5519V
CA3050
CA3026
CA3039
CA3064
C04008AK
550201
550201
550201
550201
550203
329
226
122
490
49
361
388
343
396
479
L1C
L1C
LIC
L1C
Ca5/Ma5
TA2840
TA2845
TA2845A
TA2845B
TA2845C
3N128
1N5214
1N5213
1N5212
1N5211
550201
550206
550206
550206
550206
634
270
270
270
270
309
245
245
245
245
Ma5/FET
RECT
RECT
RECT
RECT
TA5523A
TA5537
TA5551
TA5553
TA5554
CA3048
CA3049T
C04000AK
C04007AK
C04001AK
550201
550201
550203
550203
550203
247
234
30
43
30
377
611
479
479
479
L1C
L1C
Ca5/Ma5
Ca5/Ma5
Ca5/Ma5
TA2871
TA2875
TA2892
TA2829A
TA2893
2N4240
2N4440
T2300A
T2302A
T23008
550204
550205
550206
550206
550206
304
87
33
33
33
138
217
470
470
470
PWR
RF
TRI
TRI
TRI
TA5555
TA55568
TA5561
TA5562
TA5578V
C04002AK
C04006AK
CA3047A
CA3047
C04014AK
550203
550203
550201
550201
550203
30
37
61
61
74
479
479
360
360
479
Ca5/Ma5
Ca5/Ma5
L1C
L1C
Ca5/Ma5
TA2893A
TA2894
TA2894A
TA2911
TA5032
T23028
T23000
T23020
2N5294
CA3000
550206
550206
550206
550204
550201
33
33
33
61
288
470
470
470
322
121
TRI
TRI
TRI
PWR
L1C
TA5579V
TA5580V
TA5615A
TA5625A
TA5628C
C04015AK
C04018AK
CA3059
CA3066
CA3089E
550203
550203
550201
550201
550201
79
95
338
533
455
479
479
490
466
561
Ca5/Ma5
Ca5/Ma5
L1C
L1C
L1C
TA5033
TA5035
TA5037
TA5112
TA5112A
CA3001
CA3002
CA3004
CA3005
CA3006
550201
550201
550201
550201
550201
294
256
300
306
306
122
123
124
125
125
L1C
L1C
L1C
L1C
L1C
TA5634
TA5645
TA5649A
TA5652V
TA5655
C02154
CA3060E
CA3070
C04019AK
CA3051
550201
550201
550201
550203
550201
421
38
549
100
329
402
537
468
479
361
L1C
L1C
LIC
Ca5/Ma5
L1C
TA51158
TA5124
TA5158
TA5164
TA5165
CA3007
CA3008
CA3015
C02150
C02151
550201
550201
550201
550201
550201
313
80
80
409
409
126
316
316
308
308
L1C
L1C
L1C
L1C
L1C
TA5660V
TA5668V
TA5672
TA5675V
TA5677V
C04009AK
C04010AK
CA3052
C04013AK
C04044AK
550203
550203
550201
550203
550203
54
54
432
68
214
479
479
387
479
590
Ca5/Ma5
Ca5/Ma5
L1C
Ca5/Ma5
Ca5/Ma5
TA5166
TA5180
TA5183
TA5183A
TA5213
C02152
CA3010
CA3033
CA3033A
CA3011
550201
550201
550201
550201
550201
409
80
61
61
262
308
316
360
360
128
L1C
L1C
L1C
L1C
L1C
TA5681V
TA5682V
TA5683V
TA5684V
TA5690X
C04011AK
C04012AK
C04021AK
C04017AK
C02501 E
550203
550203
550203
550203
550201
61
61
110
90
403
479
479
479
479
392
Ca5/Ma5
Ca5/Ma5
Ca5/Ma5
Ca5/Ma5
L1C
TA5214
TA5218
TA5219
TA5220
TA5222
CA3012
CA3023
CA3021
CA3020
CA3018
550201
550201
550201
550201
550201
262
276
276
268
160
128
243
243
339
338
L1C
L1C
L1C
L1C
L1C
TA57028
TA5716V
TA5716W
TA5718
TA5721 X
CA3071
C04057AK
C04057AO
CA3054
C02500E
550201
550203
550203
550201
550201
549
272
272
226
403
468
635
635
388
392
L1C
Ca5/Ma5
Ca5/Ma5
L1C
L1C
TA5222A
TA5225
TA5234
TA5235
TA5236
CA3018A
CA3019
CA3013
CA3014
CA3022
550201
550201
550201
550201
550201
160
118
471
471
276
338
236
129
129
243
LIC
L1C
L1C
LIC
L1C
TA5733
TA5752
TA5757
TA57588
TA5776V
CA3053
CA3067
CA3076
CA3085
C04020AK
550201
550201
550201
550201
550203
318
533
479
375
105
382
466
430
491
479
L1C
L1C
L1C
L1C
Ca5/Ma5
TA5253
TA5254
TA5261
TA5277
TA5278
CA3016
CA3030
C02153
CA3001
CA3029
550201
550201
550201
550201
550201
80
80
409
294
80
316
316
308
122
316
L1C
L1C
L1C
L1C
L1C
TA5785X
TA5786X
TA5790
TA5795
TA5797
C02503E
C02502E
CA30600
CA3058
CA741T
550201
550201
550201
550201
550201
403
403
38
338
74
392
392
537
490
531
L1C
L1C
L1C
L1C
L1C
TA5282
TA5315
TA5316
TA5317A
TA5327C
CA3004
CA3043
CA3041
CA3042
CA3040
550201
550201
550201
550201
550201
300
466
498
506
282
124
331
318
319
363
L1C
L1C
L1C
L1C
L1C
TA5799A
TA5807
TA5814
TA5816
TA5820
CA3084
CA3078T
CA3065
CA3080
CA3541D
550201
550201
550201
550201
550201
134
52
514
30
395
482
535
412
475
536
L1C
L1C
L1C
L1C
L1C
505
Page
File
No.
446
383
126
462
61
560
534
480
429
479
L1C
L1C
L1C
L1C
COS/MOS
TA6094
TA6111
TA6111A
TA6116V
TA6116W
CA3183AE
CA1458T
CA1558T
C04046AK
C04046AO
DATA
BOOK
Vol. No.
SSD201
SSO201
SSO201
SSO203
SSO203
TA5842
TA5855A
TA5858
TA5866
TA5867V
CA3088E
CA30910
CA3081
CA3075
C04023AK
DATA
BOOK
Vol. No.
SSD201
SSO201
SSO201
SSO201
SSO203
TA5867W
TA5867X
TA5872V
TA5873V
TA5876W
C04023AO
C04023AE
C04027AK
C04028AK
C04035AO
SSO203
SSO203
SSO203
SSO203
SSO203
61
61
135
141
177
479
479
503
503
568
COS/MDS
CDS/MDS
CDS/MDS
CDS/MDS
CDS/MDS
TA6116X
TA6119
TA6122C
TA61448
TA6145V
C04046AE
CA3093E
CA3100T
CA3121 E
C04039AK
SSO203
SSO201
SSO201
SSO201
SSO-203
226
152
98
567
184
637
533
625
688
613
CDS/MDS
L1C
L1C
L1C
COS/MOS
TA5878W
TA5884AV
TA5884W
TA5884AX
TA5897X
C04034AO
C04022AK
C04022AO
C04022AE
C02501E
SSO-203
SSO203
SSO-203
SSO-203
SSO-201
169
115
115
115
698
575
479
479
479
392
CDS/MDS
CDS/MDS
CDS/MDS
CDS/MDS
L1C
TA6145W
TA6145X
TA6153W
TA6154W
TA61550
C04039AO
C04039AE
C04052AO
C04053AO
CA3123E
SSO-203
SSO203
SSO-203
SSO-203
SSO-201
184
184
258
258
450
613
613
Prel.
Pre!.
631
CDS/MDS
CDS/MDS
CDS/MDS
COS/MDS
L1C
TA5898X
TA5899X
TA5900X
TA59128
TA5914C
C02503E
CD2500E
C02502E
CA3072
CA3068
SSO-201
SSO-201
SSO-201
SSO-201
SSO201
698
698
698
549
525
392
392
392
468
467
L1C
L1C
L1C
L1C
L1C
TA6157
TA6157A
TA6164
TA6165A
TA6181
CA747CE
CA747E
CA3094T
CA3094AT
CA3146E
SSO-201
SSO-201
SSO-201
SSO-201
SSO-201
74
74
346
346
166
531
531
598
598
532
L1C
L1C
L1C
L1C
L1C
TA5920V
TA5920W
TA5920X
TA5925V
TA5925W
C04025AK
C04025AO
C04025AE
C04029AK
C04029AO
SSO-203
SSO203
SSO-203
SSO-203
SSO203
30
30
30
146
146
479
479
479
503
503
CDS/MDS
CDS/MDS
CDS/MDS
CDS/MDS
CDS/MDS
TA6182
TA6183
TA6189
TA6220
TA6228
CA3118T
CA3183E
CA3099E
CA2111AE
CA3102E
SSO-201
SSO-201
SSO-201
SSO-201
SSO-201
166
166
359
520
234
532
532
620
612
611
L1C
L1C
L1C
L1C
L1C
TA5925X
TA5926V
TA5926W
TA5932
TA5940V
C04029AE
C04036AK
C04036AO
CA3090Q
C04030AK
SSO-203
SSO-203
SSO-203
SSO-201
SSO-203
146
184
184
440
153
503
613
613
502
503
CDS/MDS
CDS/MDS
COS/MOS
Lie
COS/MOS
TA6237V
TA6237W
TA6237X
TA6238V
TA6238W
C04054AK
C04054AO
C04054AE
C04055AK
C04055AO
SSO-203
SSO-203
SSO-203
SSO-203
SSO-203
266
266
266
266
266
634
634
634
634
634
CDS/MDS
CDS/MDS
CDS/MDS
COS/MOS
COS/MOS
TA5940W
TA5940X
TA5951V
TA5951W
TA5951X
C04030AO
C04030AE
C04038AK
C04038AO
C04038AE
SSO-203
SSO-203
SSO-203
SSO-203
SSD-203
153
153
164
164
164
503
503
503
503
503
COS/MDS
CDS/MDS
CDS/MDS
CDS/MDS
CDS/MDS
TA6238X
TA6243X
TA6246V
TA6246W
TA6246X
C04055AE
CA3120E
C04049AK
C04049AO
C04049AE
SSO-203
SSO-201
SSO-203
SSO-203
SSO-203
266
581
251
251
251
634
691
599
599
599
CDS/MDS
L1C
CDS/MDS
CDS/MDS
CDS/MDS
TA5957
TA5958
TA5959
TA5960
TA5963V
CA3018L
CA3039L
CA3045L
CA3054L
C04032AK
SSO-201
SSO-201
SSO-201
SSD-201
SSO203
605
605
605
605
164
515
515
515
515
503
L1C
L1C
L1C
L1C
CDS/MDS
TA6250V
TA6250W
TA6250X
TA6251V
TA6251W
C04048AK
C04048AO
CD4048AE
C04056AK
C04056AO
SSO-203
SSO-203
SSO-203
SSO-203
SSO-203
244
244
244
266
266
636
636
636
634
634
COS/MDS
COS/MDS
COS/MDS
CDS/MDS
CDS/MDS
TA5963W
TA5963X
TA5964
TA5975
TA5978
C04032AO
C04032AE
CA3015L
CA3028AL
CA3084L
SSO-203
SSO-203
SSO-201
SSO-201
SSO-201
164
164
605
605
605
503
503
515
515
515
CDS/Mas
CDS/MDS
L1C
L1C
L1C
TA6251 x
TA6265V
TA6265W
TA6265X
TA6269X
C04056AE
C04050AK
CD4050AD
C04050AE
CA3095E
SSO-203
SSO-203
SSO-203
SSO-203
SSO-201
266
251
251
251
189
634
599
599
599
591
CDS/MDS
CDS/MDS
caS/MDS
CDS/MDS
L1C
TA5979
TA5989
TA5998
TA5999W
TA6007W
CA741 L
C04031AO
CA3083
C04037AO
C04051AO
SSO201
SSO-203
SSO201
SSO-203
SSO203
605
158
130
191
258
515
569
481
576
Pre!.
L1C
caS/MDS
L1C
CDS/MDS
CDS/MDS
TA6270X
TA6270AX
TA6281 X
TA6281 X
TA6289X
CA3096E
CA3096AE
CA3097E
CA3097E
CA 747CE
SSO-201
SSD-201
SSO-201
SSO-201
SSO201
141
141
199
199
74
595
595
633
633
531
L1C
L1C
L1C
L1C
L1C
TA6010V
TA6010W
TA6010X
TA6011
TA6014
C04047AK
C04047AO
C04047AE
C04042AO
CA3068
SSO-203
SSO-203
SSD-203
SSO-203
SSO-201
233
233
233
210
525
623
623
623
589
467
CDS/MDS
CDS/MDS
CDS/MDS
CDS/MDS
L1C
TA6289AX
TA6306
TA6309
TA6314T
TA6314T
CA 747E
CA3401 E
CA3049L
CA1458T
CA1558T
SSD-201
SSD-201
SSO-201
SSO-201
SSD-201
74
113
605
74
74
531
630
515
531
531
L1C
L1C
L1C
L1C
L1C
TA6018V
TA6018W
TA6018X
TA6029
TA6031V
C04026AK
C04026AO
C04026AE
CA741CT
C04041AK
SSO-203
SSO-203
SSD-203
SSO-201
SSO-203
126
126
126
74
203
503
503
503
531
572
CDSIMDS
CDS/MDS
CDS/MDS
L1C
CDS/MDS
TA6319
TA6330T
TA6368X
TA6379X
TA6389T
CA3126Q
CA3094AT
CA3600E
CA3072
CA3080
SSO-201
SSO-201
SSO-201
SSO-201
SSO-201
565
346
213
549
30
Pre!.
598
619
468
475
L1C
L1C
L1C
L1C
LIC
TA6031W
TA6031X
TA6033
TA6037
TA5037A
C04041AO
C04041AE
CA3082
CA748CT
CA748T
SSO-203
SSO-203
SSO-201
SSO201
SSO201
203
203
126
74
74
572
572
480
531
531
CDS/MDS
CDS/MDS
L1C
L1C
L1C
TA6391W
TA7003
TA7005
TA7006
TA7007
C04066AO
2N5470
2N6249
2N6250
2N6251
SSO-203
SSO-205
SSO-204
SSO204
SSO-204
303
140
385
385
385
Pre!.
350
523
523
523
CDS/MDS
RF
PWR
PWR
PWR
TA6044
TA6051
TA6062W
TA6062X
TA6065V
CA3086
CA3079
C04045AO
C04045AE
C04040AK
SSO-201
SSO-201
SSO-203
SSO-203
SSO-203
183
338
220
220
197
483
490
614
614
624
L1C
L1C
CDS/MDS
CDS/MDS
CDS/MaS
TA7016
TA7017
TA7032
TA7047
TA7048
2N5575
2N5578
3N138
2N4427
1N5218
SSO-204
SSO-204
SSO-201
SSO-205
SSO-206
162
162
639
81
270
359
359
283
228
245
PWR
PWR
MDS/FET
RF
RECT
TA6065W
TA6065X
TA6080V
TA6080W
TA6080X
C04040AO
C04040AE
C04043AK
C04043AO
C04043AE
SSO-203
SSO-203
SSO-203
SSO203
SSO-203
197
197
214
214
214
624
624
590
590
590
CDS/MDS
CDS/MDS
CDS/MDS
CDS/Mas
CDS/MDS
TA7048A
TA70488
TA7048C
TA7078
TA7079
1N5217
1N5216
lN5215
40606
40577
SSO-206
SSO-206
SSO-206
SSO207
SSO-207
270
270
270
168
148
245
245
245
600
297
RECT
RECT
RECT
RF
RF
TA6081V
TA6081W
TA6081X
TA6084
TA6091
C04044AK
C04044AO
C04044AE
CA3146AE
CA3118AT
SSO203
SSO-203
SSO203
SSO-201
SSO-201
214
214
214
166
166
590
590
590
532
532
CDS/MDS
CDS/MDS
CDSIMDS
L1C
L1C
TA7080
TA7090
TA7121
TA7122
TA7124
40578
JAN2N3866
2N5320
2N5321
2N5322
SSO-207
SSO207
SSO-204
SSO204
SSO-204
155
81
429
429
429
298
RF
RF
PWR
PWR
PWR
Dev. No.
Comm.
No.
Product
Line
Dev. No.
506
Comm.
No.
Page
File
No.
Product
Line
166
74
74
226
226
532
531
531
637
637
L1C
L1C
L1C
COS/MOS
CDS/MDS
325
325
325
Page
File
No.
429
379
379
278
61
325
407
407
508
322
PWR
PWR
PWR
PWR
PWR
TA7426
TA7427
TA7428
TA7429
TA7430
2N5443
2N5446
2N5567
2N5568
2N5571
DATABOOK
Vol. No.
SSD-206
SSD-206
SSD-206
SSD-206
SSD-206
TA7125
TA7130
TA7130A
TA7134
TA7137
2N5323
2N5804
2N5805
2N6177
2N5296
DATABOOK
Vol. No.
SSD-204
SSD-204
SSD-204
SSD-204
SSD-204
TA7146
TA7149
TA7150
TA7151
TA7155
2N5090
40600
40603
40604
2N5293
SSD-205
SSD-201
SSD-201
SSD-201
SSD-204
109
712
720
720
61
270
333
334
334
322
RF
MDS/FET
MDS/FET
MOS/FET
PWR
TA7431
TA7434
TA7435
TA7441
TA7442
2N5572
S2600B
S2600D
T6401B
T640lD
SSD-206
SSD-206
SSD-206
SSD-206
SSD-206
85
156
156
107
107
458
496
496
459
459
TRI
SCR
SCR
TRI
TRI
TA7156
TA7189
TA7205
TA7238
TA7244
2N5295
40602
2N5921
2N5262
3N139
SSD-204
SSD-201
SSD-205
SSD-204
SSD-201
61
712
181
423
643
322
333
427
313
284
PWR
MOS/FET
RF
PWR
MOS/FET
TA7452
TA7453
TA7454
TA7455
TA7456
S3705M
S3706M
D2601EF
D2601DF
D2600EF
SSD-206
SSD-206
SSD-206
SSD-206
SSD-206
187
187
303
303
303
354
354
354
354
354
SCR
SCR
RECT
RECT
RECT
TA7262
TA7264
TA7265
TA7266
TA7270
40601
2N5954
2N5955
2N5956
2N5781
SSD-201
SSD-204
SSD-204
SSD-204
SSD-204
712
170
170
170
34
333
675
675
675
413
MOS/FET
PWR
PWR
PWR
PWR
TA7461
TA7462
TA7463
TA7464
TA7465
T6411B
T6411D
S2620B
S2620D
S2610B
SSD-206
SSD-206
SSD-206
SSD-206
SSD-206
107
107
156
156
156
459
459
496
496
496
TRI
TRI
SCR
SCR
SCR
TA7271
TA7272
TA7274
TA7275
TA7279
2N5782
2N5783
3N141
3N143
2N6248
SSD-204
SSD-204
SSD-201
SSD-201
SSD-204
34
34
667
634
217
413
413
285
309
677
PWR
PWR
MOS/FET
MOS/FET
PWR
TA7466
TA7467
TA7468
TA7477
TA7479
S2610D
T4101M
T4100M
2N5913
2N5569
SSD-206
SSD-206
SSD-206
SSD-205
SSD-206
156
92
85
146
92
496
457
458
423
457
SCR
TRI
TRI
RF
TRI
TA7280
TA7281
TA7285
TA7289
TA7290
2N6247
2N6246
2N5202
2N5784
2N5785
SSD-204
SSD-204
SSD-204
SSD-204
SSD-204
217
217
443
34
34
677
677
299
413
413
PWR
PWR
PWR
PWR
PWR
TA7480
TA7481
TA7482
TA7483
TA7484
2N5570
T4111M
2N5573
2N5574
T4110M
SSD-206
SSD-206
SSD-206
SSD-206
SSD-206
92
92
85
85
85
457
457
458
458
458
TRI
TRI
TRI
TRI
TRI
TA7291
TA7303
TA7306
TA7311
TA7312
2N5786
2N5180
3N142
2N5496
2N5497
SSD-204
SSD-205
SSD-201
SSD-204
SSD-204
34
130
648
90
90
413
289
286
353
353
PWR
RF
MOS/FET
PWR
PWR
TA7487
TA7500
TA7501
TA7502
TA7503
2N5920
2N5754
2N5755
2N5756
2N5757
SSD-205
SSD-206
SSD-206
SSD-206
SSD-206
175
28
28
28
28
440
4111
414
414
414
RF
TRI
TRI
TRI
TRI
TA7313
TA7314
TA7315
TA7316
TA7317
2N5494
2N5495
2N5492
2N5493
2N5490
SSD-204
SSD-204
SSD-204
SSD-204
SSD-204
90
90
90
90
90
353
353
353
353
353
PWR
PWR
PWR
PWR
PWR
TA7504
TA7505
TA7506
TA7507
TA7508
T6420B
T6420D
T6420M
S6420B
S6420D
SSD-206
SSD-206
SSD-206
SSD-206
SSD-206
55
55
55
218
218
593
593
593
578
578
TRI
TRI
TRI
SCR
SCR
TA7318
TA7319
TA7322
TA7323
TA7323A
2N5491
2N5179
2N5189
2N5671
2N5672
SSD-204
SSD-204
SSD-204
SSD-204
SSD-204
90
124
418
481
481
353
288
296
383
383
PWR
RF
PWR
PWR
PWR
TA7509
TA7513
TA7514
TA7518
TA7530
S6420M
2N5838
40964
T2800M
2N5839
SSD-206
SSD-204
SSD-205
SSD-206
SSD-204
218
356
351
69
356
578
410
581
364
410
SCR
PWR
RF
TRI
PWR
TA7327
TA7328
TA7329
TA7337
TA7337A
JANTX2N3866
JANTX2N3553
JANTX2N3375
2N6032
2N6033
SSD-207
SSD-207
SSD-207
SSD-204
SSD-204
81
80
80
487
487
462
462
RF
RF
RF
PWR
PWR
TA7532
TA7534
TA7542
TA7543
TA7543
2N5919A
2N6354
S3800MF
S3800M
S2060Q
SSD-205
SSD-204
SSD-206
SSD-206
SSD-206
169
469
199
199
138
505
582
639
639
654
RF
PWR
ITR
ITR
SCR
TA7352
TA7353
TA7354
TA7355
TA7358
3N153
3N152
JAN2N4440
JANTX2N4440
JANTX2N5071
SSD-201
SSD-201
SSD-207
SSD-207
SSD-207
659
654
80
80
81
MOS/FET
MOS/FET
RF
RF
RF
TA 7545
TA7546
TA7547
TA7548
TA7549
S2060Y
S2060F
T4121B
T4121D
T4121M
SSD-206
SSD-206
SSD-206
SSD-206
SSD-206
138
138
92
92
92
654
654
457
457
457
SCR
SCR
TRI
TRI
TRI
TA7360
TA7361
TA7362
TA7363
TA7364
JAN2N5071
40605
2N5297
2N5298
T2800B
SSD-207
SSD-205
SSD-204
SSD-204
SSD-206
81
318
61
61
69
389
322
322
364
RF
RF
PWR
PWR
TRI
TA7550
TA7551
TA7552
TA7553
TA7554
T4120B
T4120D
T4120M
S7430M
2N6178
SSD-206
SSD-206
SSD-206
SSD-206
SSD-204
85
85
85
238
435
458
458
458
408
562
TRI
TRI
TRI
SCR
PWR
TA7365
TA7367
TA7374
TA7375
TA7381
T2800D
2N5918
3N159
3N154
2N6098
SSD-206
SSD-205
SSD201
SSD-201
SSD-204
69
164
675
662
121
364
448
326
335
485
TRI
RF
MOS/FET
MOS/FET
PWR
TA7555
TA7556
TA7557
TA7563
TA7564
2N6179
2N6180
2N6181
S6200B
S6200D
SSD-204
SSD204
SSD-204
SSD-206
SSD-206
435
435
435
210
210
562
562
562
418
418
PWR
PWR
PWR
SCR
SCR
TA7382
TA7383
TA7384
TA8385
TA7386
2N6099
2N6100
2N6101
2N6102
2N6103
SSD-204
SSD-204
SSD-204
SSD-204
SSD-204
121
121
121
121
121
485
485
485
485
485
PWR
PWR
PWR
PWR
PWR
TA7565
TA7570
TA7571
TA7579
TA7580
S6200M
S6210B
S6210D
T2313A
T2313B
SSD-206
SSD-206
SSD-206
SSD-206
SSD-206
210
210
210
28
28
418
418
418
414
414
SCR
SCR
SCR
TRI
TRI
TA7399
TA7401
TA7403
TA7404
TA7405
40673
D3202U
40836
S2800B
S2800D
SSD-201
SSD-206
SSD-205
SSD-206
SSD-206
745
350
298
166
166
381
577
497
501
501
MOS/FET
DIAC
RF
SCR
SCR
TA7581
TA7582
TA7582
TA7583
TA7584
T2313D
2N5757
T2313M
T6401M
T6411M
SSD-206
SSD206
SSD-206
SSD-206
SSD-206
28
28
28
107
107
414
414
414
459
459
TRI
TRI
TRI
TRI
TRI
TA7408
TA7409
TA7410
TA7411
TA7420
2N5914
2N5915
2N6212
2N5916
2N5840
SSD-205
SSD-205
SSD-204
SSD-205
SSD-204
152
152
312
158
356
424
424
507
425
410
RF
RF
PWR
RF
PWR
TA7588
TA7589
TA7590
TA7591
TA7592
40965
2N5994
2N3650
2N3651
2N3652
SSD-205
SSD-205
SSD-206
SSD-206
SSD-206
351
19'3
238
238
238
581
453
408
408
408
RF
RF
SCR
SCR
SCR
Dav. No.
Comm.
No.
320
314
Product
Line
Dav. No.
507
Comm.
No.
Page
File
No.
Product
Line
55
55
92
92
85
593
593
457
457
458
TRI
TRI
TRI
TRI
TRI
Page
File
No.
238
210
210
210
107
408
418
418
418
459
SCR
SCR
SCR
SCR
TRI
TA7988
TA7989
TA7990
TA7991
TA7993
S2060A
S2060B
S2060C
S2060D
2N6265
DATA
BOOK
Vol. No.
SSD-206
SSD206
SSD-206
SSD206
SSD205
TA7593
TA7599
TA7600
TA7601
TA7602
2N3653
S6220B
S6220D
S6220M
T6421B
DATA
BOCK
Vol. No.
SSD206
SSD-206
SSD-206
SSD-206
SSD-206
TA7603
TA7604
TA7614
TA7615
TA7616
T6421D
T6421M
T4104B
T4104D
T4114B
SSD206
SSD206
SSD-206
SSD206
SSD-206
107
107
99
99
99
459
459
443
443
443
TRI
TRI
TRI
TRI
TRI
TA7994
TA7995
TA7995A
TA7996
TA7999
2N6266
2N6267
2N6269
D1201F
40820
SSD205
SSD-205
SSD205
SSD206
SSD-201
234
240
246
278
724
544
545
546
495
464
RF
RF
RF
RECT
MOS/FET
TA7617
TA7618
TA7619
TA7620
TA7621
T4114D
T4103B
T4103D
T4113B
T4113D
SSD206
SSD206
SSD-206
SSD-206
SSD-206
99
99
99
99
99
443
443
443
443
443
TRI
TRI
TRI
TRI
TRI
TA8000
TA8001
TA8002
TA8004
TA8005
40821
40822
40823
2N6077
2N6079
SSD201
SSD-201
SSD-201
SSD-204
SSD204
724
732
732
318
318
464
465
465
492
492
MOS/FET
MOS/FET
MOS/FET
PWR
PWR
TA7626A
TA7642
TA7643
TA7644
TA7645
HC2000H
T4105B
T4105D
T4115B
T4115D
SSD-204
SSD-206
SSD206
SSD-206
SSD206
555
99
99
99
99
566
443
443
443
443
HYB
TRI
TRI
TRI
TRI
TA8007
TA8007B
TA8100
TA8100B
TA8104
2N6479
2N6480
2N6481
2N6482
40915
SSD-204
SSD204
SSD-204
SSD204
SSD-205
454
454
454
454
325
702
702
702
702
574
PWR
PWR
PWR
PWR
RF
TA7646
TA7647
TA7648
TA7649
TA7650
T6405B
T6405D
T6415B
T6415D
T6405B
SSD-206
SSD206
SSD-206
SSD-206
SSD-206
114
114
114
114
114
487
487
487
487
487
TRI
TRI
TRI
TRI
TRI
TA8158
TA8159
TA8160
TA8161
TA8162
S3703SF
S3702SF
D2103SF
D2103S
D2101S
SSD206
SSD-206
SSD-206
SSD-206
SSD206
194
194
298
298
298
522
522
522
522
522
SCR
SCR
RECT
RECT
RECT
TA7651
TA7652
TA7653
TA7654
TA7655
T6405D
T6414B
T6414D
T2304B
T2304D
SSD-206
SSD206
SSD-206
SSD-206
SSD-206
114
114
114
41
41
487
487
487
441
441
TRI
TRI
TRI
TRI
TRI
TA8172
TA8197
TA8198
TA8199
TA8201
40970
T6400N
T6410N
T6420N
2N6388
SSD-205
SSD-206
SSD206
SSD206
SSD-204
359
55
55
55
538
656
593
593
593
610
RF
TRI
TRI
TRI
PWR
TA7656
TA7657
TA7669
TA7670
TA7673
T2305B
T2305D
3N187
S6420A
2N6078
SSD206
SSD206
SSD-201
SSD-208
SSD-204
41
41
690
218
318
441
441
436
578
492
TRI
TRI
MOS/FET
SCR
PWR
TA8202
TA8210
TA8211
TA8212
TA8231
2N6386
2N6106
2N6108
2N6110
2N6293
SSD-204
SSD204
SSD204
SSD204
SSD204
538
177
177
177
177
610
676
676
676
676
PWR
PWR
PWR
PWR
PWR
TA7679
TA7680
TA7684
TA7686
TA7706
40837
40941
3N200
40893
2N6105
SSD-205
SSD-205
SSD-201
SSD205
SSD-205
298
342
698
304
221
497
554
437
514
504
RF
RF
MOS/FET
RF
RF
TA8232
TA8236
TA8242
TA8247
TA8248
2N6291
40936
40841
40887
40885
SSD-204
SSD205
SSD201
SSD204
SSD-204
177
333
739
278
278
676
551
489
508
508
PWR
RF
MOS/FET
PWR
PWR
TA7707
TA7719
TA7739
TA7740
TA7741
2N6104
2N6211
2N6175
2N6176
2N6107
SSD205
SSD-204
SSD-204
SSD-204
SSD-204
221
312
278
278
177
504
507
508
508
676
RF
PWR
PWR
PWR
PWR
TA8249
TA8323
TA8324
TA8325
TA8326
40886
2N6488
2N6487
2N6486
2N6491
SSD204
SSD204
SSD204
SSD-204
SSD-204
278
226
226
226
226
508
678
678
678
678
PWR
PWR
PWR
PWR
PWR
TA7742
TA7743
TA7752
TA7753
TA7754
2N6109
SSD204
T8430B
T8430D
T8430M
SSD-204
l>SD204
SSD-206
SSD206
SSD-206
177
177
130
130
130
676
676
549
549
549
PWR
PWR
TRI
TRI
TRI
TA8327
TA8328
TA8330
TA8331
TA8340
2N6490
2N6489
2N6213
2N6214
41038
SSD204
SSD204
SSD204
SSD-204
SSD205
226
226
312
312
397
678
678
507
507
679
PWR
PWR
PWR
PWR
RF
TA7755
TA7756
TA7757
TA7782
TA7783
T8440B
T8440D
T8440M
2N6292
2N6290
SSD206
SSD-206
SSD206
SSD-204
SSD-204
130
130
130
177
177
459
549
549
676
676
TRI
TRI
TRI
PWR
PWR
TA8343
TA8344
TA8345
TA8346
TA8347
2N6478
40894
40895
40896
40897
SSD-204
SSD-205
SSD205
SSD-205
SSD-205
83
309
309
309
309
680
548
548
548
548
PWR
RF
RF
RF
RF
TA7784
TA7802
TA7803
TA7804
TA7805
2N6288
D12018
D1201D
D1201M
D1201N
SSD204
SSD206
SSD-206
SSD206
SSD-206
177
278
278
278
278
676
495
495
495
495
PWR
RECT
RECT
RECT
RECT
TA8348
TA8349
TA8352
TA8353
TA8354
2N6385
2N6383
2N6372
2N6373
2N6374
SSD-204
SSD-204
SSD-204
SSD-204
SSD204
532
532
170
170
170
609
609
675
675
675
PWR
PWR
PWR
PWR
PWR
TA7806
TA7821
TA7823
TA7825
TA7852
D1201P
S6400N
S6410N
S6420N
2N5917
SSD-206
SSD-206
SSD-206
SSD206
SSD205
278
218
218
218
158
495
578
578
578
425
RECT
SCR
SCR
SCR
RF
TA8357
TA8358
TA8405
TA8407
TA8411
T28508
T2850D
2N6477
2N6268
D2406A
SSD206
SSD206
SSD-204
SSD-205
SSD-206
79
79
83
246
318
540
540
680
546
663
TRI
TRI
PWR
RF
RECT
TA7920
TA7921
TA7922
TA7923
TA7936
2N5992
2N5993
2N5995
2N5996
40819
SSD-205
SSD-205
SSD-205
SSD-205
SSD-201
189
194
205
210
704
451
452
454
455
463
RF
RF
RF
RF
MOS/FET
TA8412
TA8413
TA8414
TA8415
TA8416
D24068
D2406D
D2406M
D2412A
D24128
SSD-206
SSD206
SSD-206
SSD206
SSD-206
318
318
318
326
326
663
663
663
664
664
RECT
RECT
RECT
RECT
RECT
TA7937
TA7938
TA7939
TA7941
TA7943
T84508
T8450D
T8450M
40934
40909
SSD206
SSD-206
SSD-206
SSD205
SSD-205
130
130
130
329
321
549
549
549
550
547
TRI
TRI
TRI
RF
RF
TA8417
TA8418
TA8419
TA8420
TA8421
D2412D
D2412M
D2520A
D25208
D2520D
SSD206
SSD206
SSD206
SSD206
SSD206
326
326
334
334
334
664
664
665
665
665
RECT
RECT
RECT
RECT
RECT
TA7982
TA7984
TA7985
TA7986
TA7987
40940
D2540A
D25408
D2540D
D2540M
SSD-205
SSD-206
SSD206
SSD-206
SSD-206
337
345
345
345
345
553
580
580
580
580
RF
RECT
RECT
RECT
RECT
TA8422
TA8425
TA8428
TA8429
TA8430
D2520M
R47M15
2N6254
2N6253
2N6258
SSD-206
SSD-205
SSD-204
SSD-204
SSD-204
334
407
102
102
141
665
605
524
524
525
RECT
RF
PWR
PWR
PWR
Day. No.
Comm.
No.
Product
Line
Dev. No.
508
Comm.
No.
Page
File
No.
Product
Line
138
138
138
138
228
654
654
654
654
543
SCR
SCR
SCR
SCR
RF
TA8431
TA8432
TA8433
TA8434
TA8435
2N6257
2N6259
2N6261
2N6260
2N6262
DATA
BOOK
Vol. No.
550-204
550-204
550204
550-204
550204
TA8436
TA8437
TA8439
TA8440
TA8442
2N6264
2N6263
40898
40899
2N6472
TA8443
TA8444
TA8445
TA8485
TA8486
Dey. No.
Comrn.
No.
PWA
PWA
PWA
PWA
PWA
TA8650
TA8651A
TA8656
TA8657
TA8709
41028
HC2500
2N3656
2N3658
2N6468
OATABOOK
Vol. No.
550-205
550-204
550206
550206
550204
529
529
538
538
677
PWA
PWA
AF
AF
PWA
TA8710
TA8712
TA8713
TA8719
TA8720
2N6467
A47M10
A47M13
41008
41009
217
177
177
538
532
677
676
676
610
609
PWA
PWA
PWA
PWA
PWA
TA8721
TA8722
TA8723
TA8724
TA8726
550-205
550-206
550-206
550-205
550205
359
49
49
346
346
656
615
615
579
579
AF
TAl
TAl
AF
AF
550-205
550205
550205
550-205
550205
355
355
383
383
390
596
596
641
641
640
AF
AF
AF
AF
AF
Page
File
No.
141
149
45
45
133
525
526
527
527
528
550204
550-204
550-205
550-205
550204
69
69
313
313
217
2N6471
2N6473
2N6475
2N6387
2N6384
550-204
550204
550-204
550-204
550204
TA8493
TA8504
TA8505
TA8559
TA8581
40971
T2500B
T25OO0
40954
40955
TA8562
TA8563
TA8647
TA8648
TA8649
40967
40968
41025
41026
41027
Product
Line
Comm.
No.
Page
File
No.
390
749
245
245
170
640
681
724
724
675
AF
HYB
5CA
5CA
PWA
550-204
550205
550-205
550205
550-205
170
407
407
373
373
675
605
605
616
616
PWA
AF
AF
AF
AF
41010
2N6476
2N6474
2N6469
2N6470
550-205
550-204
550204
550204
550204
373
177
177
217
217
616
676
676
677
677
AF
PWA
PWA
PWA
PWA
TA8746
TA8747
TA8748
TA8749
TA8750
2N6393
2N6390
ACA2oo3
2N6391
ACA2oo5
550-205
550-205
550-205
550205
550205
270
261
261
265
265
628
626
626
627
627
AF
AF
AF
AF
AF
TA8751
TA8752
TA8761
TA88455
TA8846N
2N6392
ACA2010
40637A
538005
538005F
550-205
550-205
550-205
550206
550-206
270
270
295
199
199
628
628
655
639
639
AF
AF
AF
ITA
ITA
Dav. No.
Product
line
SSO-207
Page No.
Product
line
Electrical
Specification No.
MIL-S-195001
JAN2N918
JAN2N1482
JAN2N1486
JANTX2N1486
JAN2N1490
78
26
26
26
27
RF
PWR
PWR
PWR
PWR
301
207
180
180
208
JAN2N1493
JAN2N2016
JAN2N2857
JANTX2N2857
JAN2N3055
78
27
79
79
28
RF
PWR
RF
RF
PWR
247
248
343
343
407
JANTX2N3055
JAN2N3375
JANTX2N3375
JANTXV2N3375
JAN2N3439
28
80
80
80
28
PWR
RF
RF
RF
PWR
407
341
341
341
368
JANTX2N3439
JAN2N3441
JAN2N3442
JAN2N3553
JANTX2N3553
28
29
29
80
80
PWR
PWR
PWR
RF
RF
368
369
370
341
341
JANTXV2N3553
JAN2N3585
JANTX2N3585
JAN2N3772
JANTX2N3772
80
30
30
30
30
RF
PWR
PWR
PWR
PWR
341
384
384
413
413
JAN2N3866
JANTX2N3866
JAN2N4440
JANTX2N4440
JANTXV2N4440
81
81
80
80
80
RF
RF
RF
RF
RF
398
398
341
341
341
JAN2N5038
JANTX2N5038
JAN2N5071
JANTX2N5071
JAN2N5109
31
31
81
81
82
PWR
PWR
RF
RF
RF
439
439
442
442
453
JANTX2N5109
JAN2N5416
JANTX2N5416
JAN2N5672
JANTX2N5672
82
31
31
32
32
RF
PWR
PWR
PWR
PWR
453
485
485
488
488
JAN2N5840
JANTX2N5840
JAN2N5918
JAN2N6213
JANTX2N6213
32
32
82
33
33
PWR
PWR
RF
PWR
PWR
487
487
473
461
461
Type No.
Subject Index
DATABOOK
Page
AC-DC isolation (AN-4537)
206
449
AC line isolation (AN-6141)
206
201
474
AC voltage regulators. thyristors (AN3886)

Adders, scaling (leAN-SOlS)
206
202
416
45
Admittance parameters, short-circuit (ICAN50221
202
202
113
Active filter, integrated-circuit
(File No. 537)
AGC !ICAN-65441
Alarm system, intrusion lICAN6294)
202
204
47
333
294
857
Alpha. total IAN62151

Aluminum TO-3 packages, hermeticity evaluation of
IAN-6071l
Engineering problem (AN-6071)
Failure analysis (AN-6071)
Fa;lure data IAN-6071l
Thermal-cycling test results tAN-6071 I
207
207
207
207
207
AM broadcast receivers (ICAN-6022)

AM modulator, integrated-circuit (File No. 537)
202
201
AM radio. integrated circuit for (ICAN6022)

App!;cat;ons !ICAN60n)
Circuit description (ICAN6022)
202
202
202
318
319
318
203
202
191
333
201
446
202
202
202
202
202
202
201
202
88
92
88
90
92
92
14
90
AND-OR bi-phase pairs, COS/MOS triple

(technical data. File No. 5761
Amplification. soundcarrier (ICAN-6544)
Amplifier array, general-purpose. integratedcircuit (technical data, File No. 5601
Amplifier array. integrated-circuit, (I CAN-4072)
Circuit applications (I CAN-4072)
Circuit description (ICAN-4072)
Gain-frequency response (ICAN-40721
Noise voltage and current (ICAN-4072)
Output swing vs. supply voltage (ICAN-4072)
Quick selection chart
Stability requirements (ICAN-4072)
Amplifier array. integrated-circuit. ac
(technical data, File Nos. 377, 387)
Amplifier array, ultra-high-gain. wide-band,
integrated-circuit (technical data.
F;le No. 274)
Amplifiers. audio. circuits (File Nos. 642-6501
Amplifier. broadband 1118-to-136-MHzl.
4-watt IPEPI:
Design considerations IAN-3749l
Load-mismatch test (AN-3749)
Output power and modulation (AN-3749)
Performance and adjustment (AN-37491
Amplifier. broadband. d, linear, push-pull.
150-watt PEP IAN-4591l
Amplifier circuit, broadband. uhf (AN-60101
Amplifier circuits. generalpurpose (AN-45901
Amplifier, class B. integrated-circuit
IICAN5296.57661
Amplifier. control, and special-function
integrated circuits:
Application notes on
Technical data
Amplifier, dc, integrated-circuit (ICAN50301
Applications (ICAN-5030)
Operat;on IICAN-50301
Technical data (File No. 121)
Amplifier. differential detector. dc amplifier.
and voltage regulator, integrated-circuit
(Technical data, File No. 396)
A mpl if ier-discrim inators. integrated-c ircuit
(technical data, File No. 129)
Amp!;f;er. feedback !ICAN-50301
Amplifier-filter. high-gain (ICAN-65381
201
201
204
205
205
205
205
DATABOOK
Nos.
56
57
56
56
57
319
48
247.432
243
558635
421
419
419
423
Amplifier, FM detector. at preamplifier

integrated-circuit (technical data,
F;le Nos. 318. 3191
Amplifier. gain-controlled, integrated-circuit
IICAN-40721
Amplifier, if, integrated-circujt (ICAN-5036)
Appl;cat;ons IICAN-50361
Characteristics (ICAN-5036)
Circuit description (ICAN-5036l
Operating modes (ICAN-50361
Technical data (File No. 1231
Amplifier. narrow-band. tuned. integrated-circuit
IICAN5030)
Amplifier. d. integrated-circuit (ICAN-5296)
Amplifier, servo, integrated-circuit (ICAN-5766)
Amplifiers, integratedcircuit:
Aud;o IICAN-5037. 57661
Dr;ver IICAN-57661
Frequency-shaping (ICAN-5015)
Operational
Output IICAN-67241
Power IICAN-57661
R F I ICAN-53371
V;deo IICAN-50151
W;de-band IICAN-5338. 5766. 59771
Amplifier. tint-control, integrated-circuit
IICAN-67241
Amplifier, twin-T, bandpass OCAN-5213)
Amplifier. video, integrated-circuit
I ICAN-5037. 5338. 50151
Amplitude modulation (AN-4421 I
469
475
409
202
99: 193
202
201
201
108-209
16
255-430
202
202
202
202
201
134
140
134
134
288
201
490
201
471
202
202
141
273
498.506
202
95
202
202
202
202
202
201
145
150
148
145
145
256
202
142
202
202
98.100
198
202
202
202
202
202
202
202
202
202
202
154.194
197
44
14-86
345
191
167
40
177.195
199.205
349
202
43
202
157.186
453
205
AM receiver subsystem, integrated-circuit

(technical data, File Nos. 560. 561)
201
40,446.
455
Analog or digital signals, transmission and

multiplexing of (lCAN-6601)
203
433
203
203
191
427
AND-OR gates. COS/MOS, triple bi-phase pairs

AND-OR select gate COS/MOS quad IICAN-66001
AND-OR select gate, COS/MOS quad
Anthmetlc unit. COS/MOS {ICAN-6600l
CirCUit description (lCAN-6600l
Operation (ICAN-66001
Performance data (ICAN-6600)
Arithmetic arrays. COS/MOS (ICAN-6600)
Anthmetic
205
205
202
201
Page
Nos.
unit (lCAN-6210l
Arrays, integrated-circuit
Technical data
Astable multivibrator. integrated-circuit
IICAN-4072.5641l
Astable multivibrator, CaS/MaS (ICAN-62671
Attenuators (AN-4590)
Audio amplifier, integrated-circuit (ICAN-50371
Capacitor-coupled cascaded circuits
IICAN-50371
Circuit description (ICAN-50371
Direct-coupled cascaded circuits (ICAN-50371
Audio amplifiers, integrated-circuit (lCAN-5766)
Audio amplifier, line-operated tAN-30651
Audio driver, integrated-circuit:
Dual-supply circuit (I CAN-5037)
Single-supply circuit (ICAN-5037)
Autodyne converter. integrated-circuit (I CAN-5337)
Automatic-fine-tuning systems, integratedcircuit
IICAN-58311
Automatic shut-off and alarm system (ICAN-65381
Audio power transistors. special (technical data)
203
100
203
203
203
203
427
427
428
432
427
203
203
397
202
201
88-106
118-254
202
203
202
59.93
407
408
202
154
202
202
202
201
202
204
157
154
155
313
194
770
202
202
202
156
157
167
202
202
204
324
272
558-689
Subject Index
Avalanche breakdown:
Common*base IAN-6215)
Common-emitter (AN-62151
Avalanche breakdown vol tage, rf
Avalanche multiplication
(AN62151
DATA-
Page
DATA-
BOOK
Nos.
BOOK
204
204
207
856
857
204
856
71
Capture ratio IICAN-53801

Case-temperature effects (AN-4774)
Case-temperature effects
Characteristics of CaS/MOS integrated circuits
(chart)
Chips (technical datal:
CaS/MOS integrated-circuit (File No. 517)
Linear integrated-circuit (File No. 516)
Power-transistor (File No. 632)
Choppers (AN-4590)
B
202
324
Balanced detector. integrated-circuit (ICAN-5831)

Balanced modulator. integrated-circuit {/CAN-52991
Ballasting circuits, solid-state (AN-3616)
202
204
102
778
Bandpass amplifiers (ICAN-52131
202
53
Bandpass shaping IICAN-65441

Base-to-emitter voltage
Bass roll-off (I CAN-584 11
202
207
333
15
202
BCD data, conversion of (ICAN-6294)

Beam-lead (sealed-junction) IC's (technical
data, File No. 515)
202
330
291
201
605
Bilateral switch, COS/MOS quad (ICAN-6601l

Digital control of signal gain, frequency,
and impedance (ICAN-66011
Features (ICAN66011
Logic functions (ICAN-6601)
Multiplexing/demultiplexing
(ICAN-6601)
Operation (ICAN-6601l
Sample-hold applications (ICAN-66011
Switch and logiC;applications lICAN-6601)
Binary counter (ICAN-6166)
203
433
203
203
203
203
203
203
203
203
203
438
433
437
438
433
442
437
84
Bi-phase pairs, AND-OR, COS/MOS

data, File No. 576)
Bi-polarity comparator (ICAN-6732)
Bistable multivibrator (ICAN-5641)
203
202
202
191
84
(technical
Bridge circuits, SCR (AN-42421

Bridge rectifier (AN-4673)
Broadband rf circuit design IAN-4421)
Broadband rf operation (AN-4774)
Broadband rf power amplifier
369
(AN-3755)
206
204
205
205
205
Broadband transistor rf amplifier (AN37491

Broadband uhf amplifier IAN-6010)
205
205
Broadband uhf circuit, design approach (AN-6010)

Broadcast receivers, AM (ICAN-60221
205
202
Buffer, COS/MOS Quad, true/complement

203
Buffers/converters, COS/MOS hex

Buffer, output (ICAN-62101
Bulk leakages
Burst (popcorn) noise, measurement of lICAN-67321
Pass-fail criteria (ICAN-6732)
Test conditions (ICAN-67321
Test configuration OCAN-6732)
Test-system circuits lICAN-6732)
Bus register, COS/MOS MSI, 8-stage
203
203
207
61
438
826
455
472
429
419
479,483
477
318
203
54
202
202
202
202
202
399
16
79
82
82
79
83
203
169
C
Capacitor-input
circuits, design of (AN-3659)
206
380
202
205
207
Page
Nos.
315
473
71
203
203
201
204
307
590
738
202
407
Chroma amplifier, integrated-circuit

(technical data. File No. 468)
201
Chroma demodulator, integrated-circuit

201
537,557
Chroma signal processor, integrated-circuit

201
534,550
Chopper circuits, MOS-transistor (AN-3452)

Basic chopper circuits (AN-3452)
Basic MOS chopper circuits (AN-3452)
Equivalent circuit of MOS chopper (AN-3452)
Ideal chopper characteristics (AN-34521
Relative merits of available devices (AN-3452)
Typical circuits (AN-3452)
Use of MOS transistors in choppers (AN-3452)
202
202
202
202
202
202
202
202
365
365
366
368
365
365
370
366
Circuit factor charts for thyristors

(SCR's and Triacs, AN-35511
Current-Ratio curves (AN3551)
Full-wave ac triac circuit (AN-3551)
Full-wave dc SCR or Triac circuit (AN-35511
Fullwave SCR circuit (AN-35511
Per cent ripple in load (AN-35511
Three-phase half-wave SCR circuit (AN-3551)
206
206
206
206
206
206
206
375
375
376
377
375
379
378
203
210
203
203
203
203
482
472
474
472
205
205
475
481
Clocked D latch, COS/MOS quad

Clock/timer, battery-operated,
Digital-display, COS/MOS:
Circuit operation (ICAN-6733)
Display-driver circuits (ICAN-6733)
Performance characteristics IICAN-6733)
Coaxial-line rf power amplifier IICAN-6733)
Coaxial-package transistors (ICAN-6733)
554
Collector current, reverse
207
15
Collector-to-emitter
saturation voltage
Collector leakage currents
Bulk leakages
Surface leakage
207
207
207
207
15
15
16
16
Color demodulator, integrated-circuit IICAN-67241

Application of (ICAN-6724)
Demoqutation and matrix (ICAN-67241
Demodulator preamplifier lICAN-67241
Filtering capacitors lICAN-6724)
Output amplifiers lICAN-6724)
Tint-control amplifier (ICAN-6724)
Color matrix, integrated-circult (ICAN-6724)
202
202
202
202
202
202
202
202
202
345
352
346
348
348
345
349
346
202
202
202
202
338
93
38
161
202
38,118,
161
Comparator;
Bi-polarity IICAN-67321
DC (ICAN-56411
Micropower IICAN-66681
Phase IICAN-67161
202
202
202
203
Commutating
206
84
61
76
465
472
Color system, RGB (ICAN-67241

Color TV receivers, if system for,
integrated-circuit (I CAN-6544)
Colpitts oscillator, integrated-circuit
Common-mode gain (ICAN-S015)
Common-mode rejection (ICAN-5038)
Common-mode rejection ratio
(ICAN-5022, 5038, 50151
dv/dt (AN-61411
(ICAN-4072)
352
Constant-current sources (AN-4590)

Control circuits, general (AN-6141)
Controlled solder process
Control systems, triac (ICAN-6294)
DATA-
Page
BOOK
Nos.
202
206
207
408
473
18
202
294
Conversion, digital-to-analog (ICAN-60001
203
340
Converter, ringing-choke (AN-36161

Cooking-range control (AN-6096)
Design and function
Considerations (AN-6096)
Top-burner controls (AN-6096)
Oven/broiler controls (AN-60961
Central processor (AN-6096)
204
779
206
462
206
206
206
206
462
462
463
466
COS/Mas
203
307-322
207
207
519
520
207
207
207
207
207
207
207
207
207
203
203
203
203
203
524
528
529
528
526
526
524
525
527
1
334-487
10-21
22-24
28-322
203
203
29.120
10-21
203
207
29
179,182
chips (technical data, File No. 517)
COS/MOS chips;
Handling of (ICAN-60001
Storing of IICAN-60001
caS/MOS CD4000A slash-seriestypes
screened to MIL-STD-883 IRIC-102BI
Electrical-test and delta limits (RIC-102Bl
Environmental sampling inspections (RIC-102B)
Final electrical tests (RIC-102B)
Ordering information (RtC-102B)
Part-number code (RIC-102B)
Product-flow diagram (RIC-102B)
Screening levels, description of (RIC-102Bl
Total lot screening, description of (RIC-102Bl
CaS/MaS digital integrated circuits (Title pagel
Applications information
Functional diagrams
General features
Technical data
CaS/MOS IC's for low-voltage Applications
(technical data, File Nos. 479, 5031
CaS/MaS
COS/MOS
IFile No.
CaS/MaS
integrated circuits, functional diagrams

integrated circuits, general features
4791
integrated circuits, high-reliability
CaS/MOS integrated circuits, typical

characteristics chart
Counters, CaS/MOS (technical data):

Binary, 7-stage (File No. 503)
Decade IFile No. 5031
Divide-by-N IFile No. 4791
Up/down, presellable IFile No 5031
203
203
203
203
Counter/dividers, COS/MaS, applications of:

Decade IICAN-61661
Divide-by-81ICAN-61661
Counter-latch-timer control circuit (ICAN-6732)
203
203
203
Cross-modulation distortion (ICAN-5022)
202
Crosstalk IICAN-61761
203
Crystal oscillators:
Bipolar integrated-circuit (ICAN-5030)
COS/MOS integrated-circuit IICAN-67161
202
203
Current density, effect on reliability
207
Current gain
Current limiting, foldback (AN-4558)
207
204
Current mirrors (ICAN-6668)

Current-ratio curves (SCR's and triacs, AN-3551)
202
206
Currents, collector leakage

Current sourt;e, diode-transistor (lCAN-666B)
Curves, rf power-transistor power-frequency
207
202
205
Data-gathering and processing system (ICAN-6210)

Arithmetic unit (ICAN-62101
Control unit t1CAN-62101
Description (ICAN-6210)
Digital processor (ICAN-62101
Input signal conditioning and
transmission (ICAN-6210)
Memmy IICAN-62101
Output buffer IICAN-62101
Output transmitter (ICAN62101
Receiver IICAN-62101
DC amplifier, integrated-circuit (ICAN-50301
Applications IICAN-50301
Operation (ICAN5030)
DC power supply, ac voltage-regulated (AN3822)
203
203
203
203
203
392
397
401
392
394
203
203
203
203
203
393
396
399
399
395,400
202
202
202
202
201
206
207
134
140
134
134
288
413
203
8-9
COS/MOS life-test data

CaS/MaS logic gates noise immunity of flCAN-61761
COSIMOS MIL-M-38510 CD4000A series types
207
203
184
384
IRIC-1041
Electrical sampling inspection (R IC-1 04)
Environmental sampling inspection (RIC-104l
Final electrical tests (RIC-1041
Processing and screening requirements
IRIC-1041
Product classification guide (RIC-1041
Product flow diagram (RIC-1041
Product-number code (RIC-1 041
Screening levels (RIC-1041
Specification numbers (RIC-104)
CaS/MaS power-supply considerations (ICAN-65761
COS/MOS switch IICAN-60801
Counter, CaS/MaS binary/ripple, 12-stage
207
207
207
207
530
533
534
533
207
207
207
207
207
207
531
534
530
534
530
533
422
347
203
197
Counter, COS/MOS. 21-stage (File No. 5721
203
206
203
203
203
203
203
472
460
464
483
483
203
417
203
415
Delta tests or limits

Demodulation color-signal (ICAN-6724)
Demodulator, color, integrated-circuit lICAN-6724)
203
368
Demodulator preamplifier, integratedcircuit (ICAN-67241
Counters, CaS/MaS, applications of:

Decade, 7-segment-output (ICAN-6733)
Divide-by-N (ICAN-67161
Divide-by-R IICAN-67161
Divide-by-12I1CAN-67331
Divide-by-60 IICAN-67331
Fixed, single-stage, divide-by-N Programmable,
multidecade, Divide-by-N (ICAN-649B)
Counter, CaS/MaS, fixed and programmable,
Design of IICAN-64981
Counters, COS/MOS MSI, design and
applications of lICAN-6166)
203
203
120
126-134
95-99
146-152
DC safe area
DC safe area (power transistors, AN4774)
Decade counters, CaS/MaS, 7-segment
output IICAN-67331
Decoder, COS/MOS, BCD-to-decimal
(technical data, File No. 5031
Decoder-Drivers, MSI, BCD-to-7-segment (ICAN-62941
Fail-safe circuit HCAN-6294)
Logic description (ICAN-6294)
Logic diagram (ICAN-62941
Multiplex operation (ICAN-6294)
Operating characteristics (ICAN-62941
Static-drive applications (ICAN-62941
,Technical data (File No. 392)
Decoder stereo multiplex, integrated-circuit
Deflection circuit, magnetic (AN-30651
Delayed age IICAN-65441
205
69
471
203
473
203
202
202
202
202
202
202
202
201
141
291
299
291
293
299
294
296
403
201
204
440
202
207
333,334
187
202
202
346
345
202
348
768
I\lOS.
Derating curve, power-transistor

Detection, sound-carrier (ICAN-6544l
207
16
202
333
Diacs, silicon bidirectional:

Use of for thyristor triggering (AN-4242)
Voltage-current characteristics (AN-4242)
206
206
206
350-351
437
438
Differential-amplifier array, dual independent,

integrated-circuit (technical data,
File Nos. 388,611)
Differential amplifiers, integratedcircuit,
Basic configuration for llCAN-5380)
Differential amplifiers, integrated-circuit
high-reliability types (technical data.
File Nos. 705, 714)
Differential/cascode amplifiers, integrated-circuit
Differentiators, integrated-circuit (ICAN5015)
Diffused-junction
{technical datal
CaS/MaS
IICAN-6733J
Digital-display clock, CaS/MaS IICAN-6733)

Digital-display clock/watch confIguration,
CaS/MaS IICAN-6733J
Digital-display devices (ICAN-67331
Digitaldisplay metering application,
CaS/MaS IICAN-6733J
Digital-display timer, COS/MOS (ICAN-67331
Digital frequency synthesizer, COS/MOS lICAN-67161
Digital meter applications, COS/MOS (lCAN-6733)
Digital signals, transmission and
multiplexing of (ICAN-6601)
Digital timer/clock/watch applications,
CaS/MaS IICAN-6733J
Digitaltoanalog conversion, general
considerations (ICAN60aO)
Digital-to-analog converter, COS/MOS (ICAN6080)
201
202
207
201
226,234
311
196,203
202
318
45
204
493
207
203
203
16
484
472
203
483
203
476
203
203
203
472
203
203
433
203
477
203
203
342
203
202
202
202
202
201
Down-conversion, heterodyne (ICAN6716)

Down-converter, heterodyne, COS/MOS (ICAN-67161
Driver amplifiers, integrated-circuit (ICAN-5766)
Driver, audio, integrated circuit (ICAN5037)
Driver circuits for digital displays, types of
IICAN-6733J
Driver for 600-ohm balanced-line (lCAN-4072)
203
203
202
202
Dual Darlington array, integratedcircuit

Dual differential amplifiers (technical
data, File No. 3611
Dynamic performance of AFT system (ICAN-58311
472
457
489
Digitaltoanalog switch, CaS/MaS (ICAN-6080l

Diode Array. integrated-circuit (ICAN-52991
Circuit configuration (ICAN-52991
Operating characteristics (ICAN-52991
Technical data (File Nos. 236, 3431
Diodes, light-emitting (ICAN-6733l
Display-lamp turn-on characteristics (ICAN-6294)
Display output OCAN-62101
Dissipated-limited region
Double-tuned interstage filter (ICAN-53801
D-type latch, clocked, COS/MOS quad

Dvldt suppression (in thyristor circuits, AN-4745)
Economics, amplifier (AN-30651

Effect of temperature on silicon transistors
Electric heat application IICAN-6182l
n-p-n power transistors
Diffusion current
Digital-clock prototypes,
tlUUK
203
202
203
207
202
203
202
203
346
342
101
102
101
101
118,122
476
295
398
16
313
457,467
458
197
156,157
474
95
206
210
451
201
158
201
329
202
326
Nos.
Electric heat application (ICAN6182)
204
207
202
206
207
769
15
254
488
72
472
Electromigration
Emitter ballasting (AN-4774)
Emitter ballast resistance (AN-4591)
205
463
Emitter-site ballasting
Envelope detector (ICAN-50361
Epitaxial-base power transistors (selection chart)
207
202
204
67,70
151
13-15
Epitaxial-base power transistors, (technical datal
204
169
External noise (ICAN-61761
203
384
206
206
451
206
238
205
F
False turn-on (of thyristors, AN-47451
Fast-recovery silicon rectifiers (File No. 5801
Fast-turn-off silicon controlled rectifiers
(Technical data, File No. 408)
Feedback amplifier, integratedcircuit, cascaded
RC-cQupled IICAN-50301
Feedback factor IICAN-58411
Feedback-type volume-control circuit (ICAN-58411
202
202
345
141
202
205
206
201
329
329
466
465
47
Filters, Interstage (ICAN-53801

Final Qualification
Flanged-case silicon rectifiers (technical
data, File Nos. 3, 5, 41, 91)
202
207
313
107
206
Flasher circuit, thyristor (AN-45371

Flashover current (AN-45371
206
252,255,
265,294
448
206
444
203
203
68
427
203
135
203
480
Ferrite cores (AN-4591)

Filament pre-heatIng circuit (AN4537)
Filter, actIve, Integrated-cIrcuit (File No. 537)
Flip-flop, caS/Mas
dual D-type:
Use of in arithmetic unit IICAN-6600)
Flip-flop, COS/MOS dual J-K master-slave
Fluorescent readouts. low-voltage vacuum
IICAN-6733)
FM broadcast receivers, integrated circuits for
IICAN-52691
FM front-end cirCUits IIC's, ICAN5269, 5337)
FM if amplifier and detector, integrated-circuit
IICAN-5269)
FM if amplifier, limiter, and diSCriminator,
integrated-circuit (ICAN-52691
FM if amplifier-limiter, detector, and audio
preamplifier, integrated-circuit
FM if strip integrated-circuit (ICAN-53801
FM if system, integrated-circuit
FM receiver synthesizers, COS/MOS (ICAN-6716)
Prescaler system design (ICAN6716)
System requirements (ICAN6716)
FM synthesizer system, COS/MOS (ICAN-67161
FM tuner, integrated-circuit (lCAN5269)
202
202
304
174,306,
307
202
309
202
308
201
462
315
202
201
203
203
203
203
202
455
450
450
450
459
305
Subject Index
OATA-
FM tuner using MOS-transistor rf amplifier (AN-34531

Circuit considerations (AN-3453)
Performance (AN-3453)
RF stage design IAN-34531
FM tuner using MOS-transistor rf amplifier and
mixe, IAN-35351
Conversion transconductance, calculation of
IAN-35351
Mixer-circuit considerations (AN-3535)
Oscillator-circuit considerations (AN-3535)
Over-all tuner performance (AN-35351
Performance features of MOS transistors
IAN-35351
RF-circuit considetations (AN-3535l
Tuner design (AN-35351
Forward-bias second breakdown
Forward-bias second breakdown, testing for (AN-45731
Four-quadrant multiplier, integrated-circuit
IICAN-66681
Frequency converter, three-phase 750-watt:
Circuit description (AN-46731
Inverter (AN-4673)
Logic and driver circuits (AN-4673l
autput transformer (AN-4673)
Performance (AN-4673)
Power supply for (AN4673)
Frequency-modulation
if amplifiers, integratedcircuit IICAN-53801
Frequency multipliers, COS/MOS (ICAN-62671
Frequency-shaping amplifiers, integrated-circuit
IICAN-50151
Frequency synthesizer, COS/MOS low-power digital
IICAN-67161
Full adder, COS/MaS four-bit:
Use in arithmetic unit (ICAN-6600l
Full-wave motor controls (AN-3469)
Regulated IAN-34691
Umegulated IAN-34691
BOOK
Page
Nos.
202
202
202
202
372
372
374
374
202
378
202
202
202
202
382
380
381
381
202
202
202
207
204
378
380
379
13
817
Garage-door electronic control system (AN-3697)

Gate characteristics (of thyristors, AN-4242)
Gate, CaS/MaS
dual complementary pair plus
inverter (technical data, File No. 479)
Gate, COS/MOS quad AND-OR select IICAN-61761
Gate, CaS/MOS uqad exclusive-OR
Gate-oxide protection circuit (ICAN-6218)
Gates, COS/MOS quad, 2-input NAND IICAN-66001
Gates, COS/MOS quad 2-input NOR IICAN-66001
Gates, CaS/MOS triple AND-OR bi-phase pairs
Gates, high-speed IICAN-52961
Series IICAN-52961
Shunt (ICAN-52961
Series-shunt (ICAN-5296)
Glass-passivated aluminum
Page
BOOK
Nos.
203
457
Group A inspections, power-transistor
207
Gyrator,
201
23
47
Ground-line
noise (ICAN6716)
integrated-circuit
(File No. 537l
H
Half-wave motor controls (AN-34691
Unregulated IAN-34691
Regulated IAN-34691
Half-wave SCR circuit (AN-3551)
Harmonic distortion (ICAN-5037,
5038)
Hartley oscillator, integrated-circuit (ICAN-4072)
206
206
206
206
202
364
365
366
375
156,162
202
93
Heat control IAN-36971

Heater control, three-phase (AN-6054)
206
200
393
458
826
826
826
828
830
826
Heater regulation (AN-3822)
206
207
411
202
311
203
414
High-frequency power transistors

202
69
204
204
204
204
204
204
202
44
203
419
203
203
206
206
206
49
427
369
370
369
G
Gain controlled amplifier, Integrated-circuit
IICAN-40721
Gain control, rf-amplifier (ICAN-5022)
Gain, current
Gain equalizer (for uhf amplifier, AN-6010)
OATA-
202
202
207
205
206
95
120
15
479
206
391
432
203
43
203
385
203
203
203
403
428
203
428
203
202
202
202
202
207
191
153
97
98
99
99
68
Hermetic rf transistor packages

Heterodyne down-conversion (ICAN-6716l
High-current transistors (technical data,
File No. 462, 525, 5261
High-gain selective building blocks, evolution

IICAN-53801
High-power generation (AN-3755l
High-,eliability
COS/MOS CD4000A
slash-series types (RIC-102S)
High-reliability integrated circuits
Applications
Device nomenclature
General considerations
Life-test data, CaS/MaS
Manufacturing controls
MI L-M-38510 requirements
MI L-STD-883 requirements
Packages
Technical data, COS/MOS types
Technical data linear types
High-reliability power transistors
Electrical considerations
JAN and JANTX types
Processing and screening
Reliability considerations
Special rating considerations
Technical data on RCA types
High-reliability power transistors
(technical data)
High-reliability rf power transistors
Design features
JAN, JANTX, and JANTXV types
HR-series types, processing and screening
Premium and ultra-high-reliability
types
Special rating concepts
Technical data
High-reliability solid-state devices
Commercial requirements
I ndex to RCA types
I ntroduction to
Military and aerospace requirements
Military specifications for
High-reliability terms and definitions
High-speed gates IICAN-52961
High-speed switching power transistors
(technical data)
203
69
459,469
204
141,149
487
205
309
202
312
431
205
207
207
207
207
207
207
207
207
207
207
207
207
207
207
207
207
207
207
207
207
207
207
207
207
207
207
207
207
207
207
207
207
207
207
202
204
524
175
176,178
176,177
176
184
176
182
178
176
309-518
188-302
12
47
12
22,26-33
21
12
12
26-46
26-46
67
67
74
74
76
69
78-174
9
6
9
9
10
185
97
404-689
Subject Index
High-voltage application
(AN-35651
DATA-
Page
DATA-
Page
BOOK
Nos.
BOOK
Nos.
of silicon transistors
204
773
High-voltage generation (AN3780l

High-voltage power transistors (technical data)
206
204
406
High-voltage power transistors selection chart

High-voltage regulation (AN3780)
204
278-402
16-17
Hometaxial-base
power transistors (selection chart)
206
204
407
10-12
Hometaxialbase
power transistors (technical datal
204
26-168
Horizontal-deflection
SCR's and rectifiers
Horizontal deflection system:
For color TV receivers (AN3780)
Hot-spot thermal resistance (AN4774)
Hotspot thermal resistance
Hotspotti~g (AN-47741
Hybrid,circuit operational amplifier

(tedmical data, File No. 566)
Hybr,.d circuits, power (technical data)
HYbrid combiners (AN-3755)
Hybrid combiner/dividers
(AN4591)
effect, lamp-dimmer
187,194
400
472,474
205
H Rseries rt power transistors

(techni.cal data)
~vsteresis
206
206
205
207
(AN-3778J
69
471
207
83-118
204
204
744
744-756
205
433
205
206
467
396
Integrated-circuit chips, linear

201
Integrated-circuit FM, IF amplifiers.

design approaches for OCAN-53801
202
Integrated circuits, COS/MOS digital

Integrated circuit, high-reliability
203
207
Integrated circuits, linear (bipolar)
201
Integrators OCAN-50151
202
45
Interfacing of COS/MOS devices OCAN-66021

Active pull-ups IICAN-66021
Bipolar driving COS/MOS IICAN-66021
COS/MOS-bipolar HTL interface OCAN-66021
COS/MOS driving bipolar OCAN-66021
COS/MOS-ECL/ECCSL interface IICAN-66021
COS/MOS-to-N-MOS interface IICAN-66021
COS/MOS-to-P-MOS interface OCAN-66021
COS/MOS-TTL/DTL
interface IICAN-66021
Current sinking (ICAN-6602)
Current sourcing (lCAN-6602)
Level shifters IICAN-66021
Resistor, pull-up IICAN-66021
203
203
203
203
203
203
203
203
203
203
203
203
203
207
202
445
447
447
450
448
454
456
455
445
446,449
446,449
454
446
187
I nterim Qualification
Intermodulation
distortion IICAN5037)
I nterstage filters (ICAN-5380)
Intrinsic transistor structure (AN-3755J
Intrusion alarm system, triac (ICAN-6538)
Inverters IAN-3065, AN-35651
Push-pull types IAN-36161
Threephase bridge types (AN-4673)
Isolation, ac-dc (AN4537)
IF-amplifier circuits, integrated types

OCAN-5296, 5022, 5036, 5337, 53381
202
97,129,
150,167,
172,187
201
514
IF amplifiE!r, integratedcircuit OCAN-5036)

Applications IICAN-50361
Characteristics (ICAN5036)
Operating modes (ICAN-5036)
202
202
202
202
202
145
150
148
145
145
IF amplifier-limiter.
integrated-circuit highgain,
wideband (technical data, File No. 430)
IF strips, FM, integrated-circuit (lCAN-5380,
5337)
201
202
479
312,173,
174
201
455
202
341
Keyed AGC IICAN-65441
202
336
202
203
206
206
206
173
480
202
315
202
173
Insertion loss (ICAN5380)

Institute of High-Fidelity Manufacturers (lHFM)
OCAN-53371
Integralcycle heater control, proportional
(AN-36971
Integrated-circuit arrays:
Application notes on IICAN-4072, 5296, 52991
Technical data
206
202
201
390
445
472
393
88-106
118-254
312
1
188
1
156
313
206
429
272
768,773
779
826
449
207
207
207
20
20
20
207
78-82
72
IF amplifierlimiter,
FM detector,
electronic attenuator, audio driver, inte~rated
circuit (technical data, File No. 412)
IF system, FM, integrated-circuit

IF system, integrated-circuit, blackand-white
TV receiver OCAN-65441
IF system, integratedcircuit, for color TV
receiver IICAN-65441
I HFM (I nstitute of HighF idelity Manufacturers)
IICAN-53371
Incandescents readouts (ICAN6733)
Induction motor controls (AN3697)
Inrush current (AN-45371
Inrush currents (AN-6141)
202
205
202
204
204
204
590-604
JAN and JANTX power transistors

RCA types
Processing and screening
JAN, JANTX, JANTXV
(technical datal
Junction temperature,
rf power transistors
effect on reliability
207
202
333,334
L
Ladder networks, resistance (ICAN-6080)
203
342
Lampdimmer circuits (AN3778)

Double-time constant types (AN-3778)
Singletimeconstant
types (AN37781
With over-voltage clamp (AN3822)
206
206
206
206
397
398
397
412
203
210
203
214
Latch, COS/MOS
(technical data,
Latch COS/MOS
(technical data,
quad, clocked D
File No. 289)
quad, 3-state NAND R/S
File No. 590)
Subject Index
Latch. CaS/MaS quad 3-state. NOR R/S

DATA-
Page
DATA-
Page
BOOK
Nos.
BOOK
Nos.
203
214
Latched memory circuit IiCAN-63581

Level converters. COS/MOS IiCAN-67331
Level detector, COS/MOS IiCAN-6601l
Light-activated control (ICAN~6538)
IAN-36971
Light control IAN-36971
Light-control circuits IAN-3778, AN-4242)
Basic triac-diac type IAN-37781
Double-time-constant types (AN-3778)
Single-time-constant
types IAN-37781
202
203
206
271
474
444
272
389
387
206
206
206
206
394.441
396
397
396
Light dimmers, triac (AN-3778)

Circuits IAN-37781
Circuit description (AN-3778)
Hysteresis effect (AN-3778)
Range control (AN~3778)
RFI suppression (AN-3778)
Trouble shooting IAN37781
Light-emitting
diodes lICAN-67331
206
206
206
206
206
206
206
203
395
398
395
396
397
398
398
476
Light flasher, synchronous (lCAN~61821

lICAN-61821
Lighting systems, relative merits
of various types IAN-36161
Limiter, integrated-circuit (ICAN~5337l
Limited~amplifier, integrated ';circuit
IICAN-5831.53381
Limiter characteristics (of IC rf amplifiers)
IICAN-5022)
Limiting amplifier, integrated-circuit (ICAN-5338)
202
206
260
494
Line Certification
Line isolation, ac (AN~6141)
Linear amplifier, push-pull 150-watt,
2-to-30-MHz IAN-4591l
203
202
206
204
776
202
167
202
324, 189
202
202
126
190
207
186
474
206
205
469
205
431
Linear applications of rf power

transistors (AN-37551
Linear IC arrays (technical datal
201
118-254
Linear IC chips (technical data, File No. 5161
201
590-604
Linear integrated circuits and

MOS devices
Index to
Packages and ordering information
201
202
201
201
1
1
6
23
207
207
207
207
207
207
207
207
207
206
303
307
308
307
305
305
303
304
306
401
202
93
329
Linear integrated circuits (CA3000 slash-seriestypes)

screened to MIL-STD-883 IRIC-202)
Electrical sampling inspection (RIC~2021
Environmental sampling inspection (RIC-2021
Final electrical tests (RIC~2021
Ordering information (RIC~2021
Part-number code (RIC-2021
Product flow diagram (RIC-202)
Screening levels (RIC-2021
Total lOt screening (RIC-202)
Linearity (AN~378Q)
Linear mixer, four-channel,
integrated-circuit (ICAN-4072)
Losser-type volume-control circuit OCAN-58411
Loudness contouring (ICAN-58411
Low~resistancesensor (AN-60961
LTPD
LTPD sampl ing plans
Lumped-constant rf power amplifiers (AN-37641
Lumped-constant rf power oscil1ator (AN-3764)
202
202
206
207
330
465
187
207
205
23
444
205
443
M
Magnetic deflection circuit (AN~30651
204
768
Manufacturing Certification
207
186
Matched diodes, ultrafast. low-capacitance

201
122
Matrix:
Rectifier products
SC R products
Triac products
206
206
206
22
18
14
Maximum usable gain (ICAN65441
202
338
Medium-power p-n-p transistors

(technical data. File No. 216)
204
Medium-power transistors. hometaxial II types

204
Mercury-arc lamps:
Advantages of IAN-36161
Ballasting of IAN-3616)
Characteristics of (AN-3616)
Conventional ballasting methods (AN-3616)
Starting current for (AN-3616)
Solid-state ballasting circuits (AN-3616)
204
204
204
204
204
204
777
776
776
778
785
778
203
202
470
201
395
445
446
445
449
442
Memory. COS/MOS. preset-channel IICAN-67161

Memory, integrated-circuit, latched (ICAN-65381
Memory sense amplifier, integrated-circLJit,
dual~input (technical data, File No. 53'~11
Microstripline circuits (AN-4025)
Design of IAN-40251
Mounting arrangement (AN-40251
Performance of (AN-4025)
205
205
205
205
Microstripline oscillator (AN-3764)

Microwave power amplifiers (AN-37641
Biasing arrangements (AN~3764)
Coaxial~line types (AN-37641
Device and package construction (AN-37641
Design of IAN-37641
Large-signal amplifier operation (AN3764)
Lumped-constant, common-base types (AN-3764)
Performance of practical circuits (AN4025)
Power gain (AN37641
Pulse operation (AN-3764)
Reliability IAN-3764)
Stripline type (AN-37641
205
205
205
205
205
205
205
205
205
205
205
205
205
Microwave power oscillators (AN3764)

Basic configuration (AN~3764)
Design of IAN-37641
Device and package construction (AN-3764)
Lumped-constant type (AN-37641
Microstripline type (AN-37641
Reliability IAN-37641
Wide-band type IAN-37641
205
205
205
205
205
205
205
205
207
207
207
207
207
207
Military specifications
MIL-M-38510
MIL-S-19500
Ml L-STD-883 requirements
COS/MOS integrated circuits
Linear integrated circuits
Mixer capabilities (of integrated-circuit
rf amplifiers) lICAN-50221
202
410
45.69
271
438
443
439
436
438
438
444
449
443
440
438
440
436
441
441
436
442
442
438
442
10
10
10
178
179
180
Mixers IAN-45401
202
123
411
Mixers, integrated-circuit:
8alanced lICAN-50221
Fourchannellinear (ICAN-40721
Low-frequency (ICAN-5025)
202
202
202
123.129
93
281
Mixers, MOStransistor:
FM-receiver (AN-35351
VH F-receiver (AN-3341)
202
202
378.380
362
Molded-plastic transistors and thyristors

Lead forming techniques (AN-4124)
Lead forming techniques (AN-4124)
Mounting IAN-4124)
Mountino (AN41241
Thermal-resistance considerations (AN-41241
Thermal-resistance considerations (AN-4124)
Types of packages (AN-4124)
Types of packages (AN-41241
204
206
204
206
204
206
204
206
790
423
793
426
790
423
789
422
Subject Index
ua~ll,.. \..VIIII!:lUldllVII
Gate protection (AN--459'O)

Electrical requirements IAN-459Q)
Applications (AN-4590l
MOS field-effect devices (see MOS field-effect
transistors)
MOS field-effect transistors:
Technical data
MOS field-effect transistors, dual-gate-protected
types:
Breakdown mechanism (AN-40181
Cross-modulation considerations IAN-4431)
Currenthandling capability (AN-40181
Electrical requirements (AN-4018)
Gateprotection diodes (AN-4018, AN-4431)
202
202
202
Gate-protection methods (ANA018)

Input capacitance and resistance (AN-4018)
Noise factor (AN-40181
Operating conditions (AN-4431)
Power gain (AN-40181
RF applications IAN-4431l
Stability considerations (AN-44311
Static discharge, effect of (AN-4018)
MOS field-effect transistor, vhf applications:
Biasing requirements (AN-3193)
Circuit configurations IAN3193)
Operating-point selection fAN-3193)
AGC methods IAN-31931
R F considerations (AN-3193)
Use of in vhf circuit design (AN-31931
MOS integrated circuit,
handling considerations OCAN60001
MOS-transistor vhf mixer, design of (AN-3193)
Motor controller, integratedcircuit (ICAN-5766)
Motor controls (AN-3469, AN-36971
Circuit components (AN-3469)
Full-wave types (AN-34691
Half-wave types IAN-34691
Ratings and limitations (AN-3469)
Regulated IAN34691
Three-phase IAN60541
Unregulated (AN-34691
MTTF or MTBF
Multiplex decoder, integrated-circuit,
404
406
403
\1L.AI'Il-OLOIJ
Compensated circuit (ICAN6267)

Low-power circuit (ICAN-6267)
Monolithic Darlington power transistors
(technical data, File Nos. 594, 563, 609, 610,
693,6941
Monostable multivibrator. integrated-circuit
(ICAN-5641l
202
201
354-418
634-752
202
202
202
202
202
202
202
202
202
202
202
202
202
384
400
387
386
386,396,
400
385
387
387
396
387
396
400
384
202
202
202
202
202
202
354
354
356
357
357
358
NAND R/S latch, 3-state COS/MOS

quad (technical data, File No. 590)
Noise immunity (of caS/MOS logic gates):
(ICAN61761
Crosstalk noise immunity (ICAN-6176)
External noise immunity, signal-line (ICAN6176)
Ground-line noise immunity (ICAN-6176)
Power-supply noise immunity (ICAN-6176)
Types of noise (ICAN61761
207
519
362
202
202
206
206
206
206
206
206
206
206
207
198
364,390
366-374
369
366
370
367,369
460
367,369
187
201
440
MOS chopper circuits (AN-3452)

MOS/FET's (see MOS field-effect transistors)
LU;;
203
203
204
202
202
410
411
412
524-556
61
370
MOS/FET integrated circuits. use in linear

circuit applications
N
NAND gates, (positive logic)
CaS/MaS (technical data, File No. 4791
203
61
203
214
203
203
203
203
203
203
384
388
385
388
386
384
Noise performance (of integrated-circuit

rf amplifiersJ (ICAN-50221
Noise-limited amplification llCAN-65441
202
202
116
333,336
NOR gates, COS/MOS quad 2-input IICAN-6600l
203
428
NOR gates (positive logic), COS/MOS

NOR R/S latch, COS/MOS quad, 3-state
Nuclear radiation, effects of
Numitron devices ltCAN6294)
(ICAN6733J
203
30
203
207
214
202
203
295
480
20
stereo
Multiplexer-decoder integrated-circuit,
linear (ICAN-66681
Multiplexer, integrated-circuit,
threechannel (File No. 537)
Multiplexing of analog and digital
signals (ICAN-66011
Multiplex system, integrated-circuit,
twochannel linear (ICAN-66GB)
Multiplier, integratedcircuit (File No. 537)
Fourquadrant, analysis of (lCAN6668)
Multiplier, integrated-circuit,
fourquadrant (technical data, File No. 534)
Multiplier, integrated-circuit,
two-quadrant (File No. 537)
Multistable circuits, precision (ICAN6668)
Multivibrators, COS/MOS
Astable IICAN62671
Monostable (ICAN-62671
One-shot, basic circuit (ICAN6267)
One-shot, compensated circuit (Ir.AN-6267)
Multivibrators, integrated-circuit:
Astable (ICAN-4072, 56411
Bistable (ICAN-5641l
Monostable IICAN5641l
202
73
201
48
203
433
202
201
202
65
49
69
201
383
201
202
48
74
203
203
203
203
407
407,410
410
411
202
202
202
93.59
61
61
0
Oscillators (AN-4590)
Oscillators, COS/MOS astable and monostable:
Astable multivibrator circu,its (ICAN6267)
Applications IICAN-6267J
Compensation for 5O-per-cent duty
cycle (ICAN-62671
Monostable multivibrator circuits (ICAN6267)
Oscillator, COS/MOS crystalcontrolled (ICAN-6716)
Oscillator, COS/MOS phase-locked,
voltage-controlled (ICAN6267)
Oscillator, COS/MOS voltage-controlled
(ICAN62671
Oscillators, integrated-circuit (ICAN-4072)
Crystal-controlled (ICAN-5030J
Modulated (ICAN-5030J
Oscillator, microstripline (AN-3764)
On-off switching circuits IAN-4537)
Operational amplifier
202
411
203
203
407
413
203
203
203
411
410
468
203
413
203
202
202
202
205
206
413
93
140
140
442
447
204
744
Operational amplifiers, high-performance,

integrated-circuit (ICAN-5641)
Noise figure IICAN-5641)
Phase compensation (ICAN-5641)
Slewing rate IICAN56411
Applications IICAN56411
Operational amplifiers, high-reliability
integrated-circuit types (technical data.
File No. 715)
Operational amplifiers. integrated-circuit
IICAN5015, 5213, 5290)
Applications
Bias current, input (ICAN-52901
Characteristics and features chart
Common-mode gain (ICAN-52901
Common-mode rejection
lICAN5015, 5213, 5290)
DC levels, input and output (ICAN-529Q)
Design criteria f1CAN-52901
Equivalent-circuit
model (ICAN5290)
External modifications (ICAN-5015)
Gain-frequency response (ICAN-5015,
5213,5290)
General considerations (ICAN-5290l
Input and output impedances
lICAN-5015, 5213, 52901
Inverting configuration (ICAN-5290)
Load impedance, effect of finite OCAN-5290l
Noninverting configuration (ICAN5290)
Offset voltage and current OCAN529Q)
Operating characteristics (ICAN-5015,
5213)
Output-power capability IICAN5290)
Output-power modifications (ICAN-5015l
Output swing (ICAN5015)
Phase compensation (ICAN-5015,
5213, 5290)
Phase shifts, feedback IICAN-5290)
Power-supply stability (ICAN-5290)
Quick-selection chart
Technical data
Transfer characteristics (ICAN-5015,
5213)
Transfer function OCAN-5290)
Operational amplifiers, integrated-circuit,
application notes on
Operational amplifiers, integrated-circuit,
characteristics and features chart
Operational amplifiers, integrated-circuit
high-output-current
Operational amplifiers, integrated-circuit
qu ickselection chart
Operational amplifier, micropower
integrated-circuit (technical data, File No. 535)
Operational transconductance amplifiers,
integrated-circuit, high-performance:
lICAN6668)
Amplitude modulation (ICAN-6668)
Applications (iCAN-66681
Circuit description OCAN-6668)
Gain control lICAN-6668)
Multiplexing lICAN-6668)
Technical data (File Nos, 475, 537)
Output amplifiers, integrated-circuit (ICAN-6724)
Output stages, integrated-circuit (ICAN-6668)
Oven control IICAN6182)
lICAN6182)
Overlay transistor structure
DATA-
Page
lOOK
Nos.
202
202
202
202
202
202
201
55
55
56
57
57
58
61
207
222
P
PDA
Peak-envelope-power rating (AN-45911
Phase comparator, COS/MOS IICAN-6166)
Phase-locked loop. fundamentals of OCAN-61011
Phase-locked loops, practical digital types
(ICAN6101)
Phase-shift transformer,
Photo-coupled
202
202
202
201
202
202
202
34,49, 14
88-352
32
10
34
20
38,50,32
202
202
202
202
202
202
29
29
21
47
37,50,30
14
202
38,50,
16,20
15
21
18
32
34,49
30
40
38
39,50,29
22
33
8
30-116
40,50
15,18
202
202
202
202
202
202
202
202
202
202
202
201
201
202
202
202
14-86
201
10
201
61
201
201
52
202
202
202
202
202
202
201
202
202
202
206
207
63
68
65
63
68
65
30,38
345
74
255
489
67
discriminator
(ICAN-52691
isolators (AN6054)
Photocurrents
Photo detector and power amplifier
Photo-detector and power amplifier,
integrated-circuit (ICAN-65381
Circuit description IICAN-6538)
Typical applications f1CAN-65381
Polycrystalline silicon laver
DATA-
Page
BOOK
Nos_
207
187
205
203
203
462
368
203
202
361
308
206
459
360
207
20
201
367
202
202
201
202
207
269
269
367
272
68
205
205
205
205
205
205
205
205
205
205
205
205
205
451
453
458
455
458
451
452
453
455
453
451
458
451
202
202
202
202
202
191
194
191
194
201
268
206
439
206
206
206
206
206
206
206
456
456
460, 461
458
460
458
456
Power-frequency curves for rf power

tranSistors
Powerllne noise (ICAN-6176)
205
8-10
Power OSCillators (AN-3764)

Lumped-constant
Microstripline
Wideband
Power oscillators, microwave:
Desogn of (AN-3764)
Power hybrid circuits:
Technical data
Power hybrid operational amplifiers
(File Nos. 566, 6811
203
205
205
205
205
384
436
442
442
442
205
441
204
744-756
204
744, 749
204
204
204
797
803
797
Power amplifiers, broadband, uhf/microwave

IAN-4421)
Amplitude modulation IAN-4421)
Cascade and parallel connections IAN-4421
Circuit impedances (AN4421l
Circuit performance (AN-4421l
Evaluation circuit (AN-4421)
Gain and VSWR control (AN-4421)
Hybrid combiners {AN-4421 I
Input-circuit design (AN-4421)
Output-circuit design (AN-4421l
Package design (AN-4421)
Practical circuits (AN-44211
Reduction of VSWR IAN44211
Power amplifiers, integrated-circuit
multipurpose wideband (ICAN-5766)
Applications lICAN5766)
Operating characteristics (ICAN-5766)
Operation (ICAN-5766)
Technical data, (File No. 339)
Power control IAN-42421
Power controls, triac, for three-phase
systems IAN-6054)
Basic design rules lAN6054)
Circuits lAN-6054)
DC logic circuitry, isolation of (AN-60541
Inductive-load systems (AN6054)
Resistive-load systems
Trigger circuit (AN-6054)
Power supplies, compact, highcurrent

5-volt, regulated
Basic design concept (AN-4509J
Design example IAN-4509)
Major elements (AN-4509)
191
Power supply, bridge-rectifier
(AN-46731
Power supply considerations for CaS/MaS

devices:
AC dissipation characteristics OCAN-6576l
AC performance characteristics (lCAN65761
Filtering requirements (ICAN-65761
High de source IICAN-65761
Quiescent dissipation (ICAN-6576)
Regulation requirements OCAN-6576l
System power, calculation of (l CAN-6576)
Switching characteristics (ICAN-6576)
Power supply, regulated 60watt
20-volt IAN-45581
Circuit description (AN-4558)
Construction (AN-4558)
Design considerations (AN-4558)
Foldback current limiting (AN-4558)
Performance IAN-45581
Voltage regulation (AN-4558)
Power-transistor chips
(technical data), (File No. 632l
DATA-
Page
Nos.
BOOK
Nos.
204
826
421
423
425
426
421
425
424
424
Qualified Parts List (QPLl
202
207
315
203
203
203
203
203
203
203
203
207
10
203
421
204
204
204
204
204
204
805
805
812
809
807
811
207
207
207
207
21
204
805
207
45
207
207
20
207
206
206
206
522
389
443
397, 443,
449
203
204
184
823,831,
846
206
202
204
380
352
784
Quadruple-tuned
204
207
204
204
204
204
204
204
204
204
738-742
1
12
10-22
170-522
404-689
278-402
26-168
524-556
692-735
558-276
ratings
204
Power transistors, thermal-cycling

requirements (AN-4612, 4783l
Power transistors, vhfluhf, broadband
power-amplifier applications of (AN-601o)
Pix-if system, integrated-circuit (ICAN-6544l
Planar transistors, rf power (technical datal
Plastic-package transistors and thyristors (AN-4124)
Lead-forming techniques (AN-4124)
Mounting IAN-41241
Thermal-resistance considerations (AN41241
Types of packages IAN-41241
Plastic-package transistors and thyristors lAN-4124)
Lead-forming techniques (AN-4124)
Mounting IAN-41241
Thermal-resistance considerations (AN-41241
Types of packages (AN-4124)
P-N-P power transistors, selection charts
Popcorn noise (ICAN-6732)
Preamplifier, demodulator, integrated
circuit
Page
BOOK
204
Power transistors and power hybrid circuits

Power transistors, high-reliability
Power transistors, selection charts
Power transistors (technical data) :
Epitaxial-base types
High-speed switching types
High-voltage types
Hometaxial-base types
Monolithic Darlington types
Small-signal low-noise types
Special audio power types
Power transistors, thermal-cycling
for IAN-4612, 4783, 61631
DATA-
IICAN-67241
204
205
202
205
204
204
204
204
204
206
206
206
206
206
204
202
823,831,
846
824, 832
475
333
20-51
789
791
793
793
789
422
424
426
426
422
13-22
349
207
203
203
203
203
119-174
458
458
470
394
IICAN-5022, 50361
Program-switch ("N"-selectl options (ICAN6498l
Proportional zero-voltage switching (AN-6096l
202
203
206
131,152
Protection circuit CaS/MaS

gate-oxide (ICAN-6218)
Pull-up resistor (ICAN-6602)
Pulse applications, high-current (AN-3418)
203
203
206
Preset-channel memory, CaS/MaS

Processor, digital (ICAN-6210l
UCAN-6716)
Product detector, integrated-circuit
Pulse-width circuit, CaS/MOS

controlled IICAN-62671
Pushpull inverter (AN-3616)
Qualified products list

Quiescent dissipation (of CaS/MaS
420
465
403
446
359
187
devicesl
IICAN-65761
R
Radiation dose rate
Radiation, effect on power transistors
Displacement damage
Photocurrents
Radiation-hardened power transistors,
technical data
Radiation levels
Radiation parameter
19
20
20
20
Radiation resistance of. COS/Mas

CD4000A IICAN-62241
Radio frequency interference (RFIl IAN-36971
Suppression network (AN-4242l
Suppression of IAN-3778, 4242, 4537
RAM, CaS/MaS,
binary, 4-word, a-bit
(technical datal, (File No. 613l

Rating chart, thermal-cycling (AN-4612,
4783,61631
Rating curves, rectifier (AN-3659)
RCS color system (ICAN-67241
Reactor element, switching-regulator lAN-3616l
Read-only-memory, CaS/MaS
(technical data),
IFile No. 6131
Readouts, incandescent (ICAN-6733)
Real-time controls (AN-6163l
Receiver circuits, integrated
Technical data
Receiver subsystem, AM, integrateo-circuit
203
184
203
207
480
62
201
201
18
432-588
201
446
203
202
460
308
Rectifier current, calculation of lAN-36591

Rectifier product matrix
Rectifier rating curves (AN-3659)
206
206
382
22-24
Rectifiers, fast recovery, (File Nos. 580, 629, 663,
206
(technical datal. (File No. 5601

Receiver synthesizer, caS/Mas
Recovered audio (ICAN-5269)
FM (ICAN-6716)
206
664, 6651
79
202
Premium- and ultra-high-reliability

rf power transistors technical data
Prescaler, CaS/MaS IICAN-67161
Prescaling IICAN-67161
interstage filter OCAN-53801
Rectifiers, silicon
Product matrix
Technical data
Rectifiers, studmounted
(technical data)
385
345,313,
318,326,
334
206
206
22-24
252-348
206
281-293:
318-348
calculation of (AN-3659l
Reed-relay thyristor gate control (AN-4537l
206
206
381
449
Registers, CaS/MaS
MSI, design and
application IICAN-61661
Reliability classes, MI L-M-3851 0
Reliability levels, MILS19500
Resistance ladder networks (ICAN-60BO)
203
207
207
203
368
10
10
342
Resistance networks for DAC's (ICAN6oBO)
203
342
206
203
381
446
types
Rectifier surge-protection resistance,
Resistance, rectifier surge-protection
voltage203
204
413
779
calculation of (AN-3659l
Resistor, pull-up OCAN-6602)
520
Subject Index
REVERSAWATT
transistors,
epitaxial
DATA-
Page
DATA-
Page
BOOK
Nos.
BOOK
Nos.
base
204
silicon n-pn and p-n-p (technical datal

Reverse-bias
second breakdown
207
207
Reverse collector current

RF amplifier IAN-45901
202
262-276
12
15
411
R F amplifiers, integrated circuit (ICAN-5022,
202
108,
R F amplifiers,
202
372,374,
378,380
MOS-transistor
(AN3453,
3535)
RF avalanche breakdown voltage
207
71
RFI (see radio frequency inteferencel

RF operation
IAN-47741
RF power amplifiers
IAN-3755,
3764, 44211
R F power devices
Application notes for
Power-frequency curves
Selection charts
Technical data
205
205
472
429,444,
458, 459
205
205
205
205
205
414-511
8-10
11-16
20-605
8-10
205
205
205
205
15
15
11
12
205
205
205
16
13-15
16
RF power transistors in linear applications

IAN-4591l
205
461
RF power transistors, pulsed operation of

IAN-37551
205
427
RF power transistors, safe-area curves for
205
427
R F power transistors, power-frequency curves

RF power transistors, selection charts for:
Aircraft and marine-radio applications
Marine-radio applications
Microwave applications
Military applications
Military communications and CATV /MATV
and small-signal applications
Mobile-radio applications
Single-sideband applications
IAN-37551
RF power transistor, for single-sideband
linear amplifier (AN-4591l
Ringing-choke converter (AN-3616l
Ring modulator,
integrated-circuit
Ripple blanking
(lCAN-6294)
(ICAN-5299)
R/S latches, COS/MOS quad 3-state

(technical data), (File No. 590)
205
204
461
779
375
439
377
SeR circuit, half-wave (AN-3551)
206
206
206
SCR bridge circuits IAN-42421

SeR circuit, full-wave de (AN-3551)
206
206
SeR horizontal deflection system (AN-37801

Advantages of IAN-37801
Arc protection (AN-3780)
Basic operation (AN-3780)
High voltage generation (AN-3780)
High-voltage regulation (AN-3780)
Linearity correction (AN-3780)
Performance requirements IAN-3780)
Switching-device requirements (AN-3780l
206
206
206
206
206
206
206
206
206
439
400
409
408
402
406
407
408
400
401
SCR product matrix

SCR's (technical data)
SCR turn-o-n time (AN-3418l
206
206
18-21
138-250
"06
206
206
207
207
SCR, two-transistor analogy of (AN-42421

SCR, two-transistor model of (AN-4745)
Screening tests, power-transistor
Second breakdown
817
817
818
818
818
202
202
202
202
313
314
317
314
SEM specification
207
107
206
138
206
33-46
214
rectifiers (technical data), (File No. 6541

Sensitive-gate triacs (technical data)
IFile Nos. 431, 441, 4701
202
66
207
207
207
207
23
25
25
16
35
273
202
202
202
202
174
152
22
12
204
204
204
204
204
202
203
207
207
359
430
452
Second breakdown, forward-bias (AN-4573)

Causes of IAN-45731
Test facility for (AN-4573)
Test circuits (AN-4573l
Transistor characterization for (AN-4573)
Second detector OCAN-5296)
Selectivity curve:
Double-tuned filter II CAN-53801
Quadruple-tuned filter (ICAN-5380l
Six double-tuned filters (I CAN-5380)
Triple-tuned filter (ICAN-5380)
Sensitive-gate silicon controlled
Safe-area systems, pulsed

Safe-operating-area chart
Sample-and-hold circuits (ICAN-6668l
Sampling plans, LTPD
Sampling plans, single, for normal inspection
Sample size code letters
Saturation current
375
439
SeR control circuit, full-wave {AN-4242l

SeA control circuit half-wave IAN-4242)
105
838
842
842
842
839
839
838
16
16
trigger (lCAN-5337)
trigger IICAN-5036)
206
Itechnical datal, IFile Nos. 354, 5221

SeR applications, circuit factor charts
IAN-3551 I
294
204
204
204
204
204
204
204
143
294-302
202
Safe-area measurements, test set for (AN-6145)

Construction (AN-6145)
Controls and connections (AN-6145)
Operation IAN-61451
Schematic diagram (AN-6145l
System design IAN-61451
System philosophy IAN-61451
Schmitt
Schmitt
202
206
202
Scaling adders II CAN-50151

Schmitt circuit (ICAN-6538)
Schmitt trigger (I CAN-50301

SeR's and rectifiers, horizontal-deflection
99
Serial adder, COS/MOS triple

203
164
Serial adder, COS/MOS triple

(technical datal. (File No. 575l
203
169
Servo amplifier OCAN-5338l
202
189
203
79
203
169
203
177
203
380
Shift register, COS/MOS dual 4-stage

static (technical data), (File No. 479)
Shift register, static, COS/MOS
MSI (technical data), (File No. 575)
Shift register, COS/MOS, parallel-in,
parallel-out, 4-stage (technical datal
IFile No. 5681
Shift register, COS/MOS 4-stage serialinput/parallel-output,
static (ICAN-6166l
Shift register, COS/MOS 8-stage,
asynchronous, parallel-input/serial
output static (ICAN-6166l
Shift register, COS/MOS 8-stage
static (technical data). (File No. 479)
Shift register, COS/MOS, 18-stage
static (technical data) (ICAN-6166l
Shift register, COS/MOS 18-stage
(technical datal. (File No. 479)
203
203
382
74,110
203
380
203
37
\~~j~~a~aJI,~r~~I~Os.
:>o~,:>UJJ
Silicon bidirectional diacs

LU~
206
l:>ts,IOq
350
Silicon-controlled rectifiers and silicon

rectifiers complement (technical data)
IF;le Nos. 522, 3541
Silicon controlled rectifiers, high- current
pulsed applications of (AN-3418)
Characteristics and ratings (AN-3418)
Circuits (AN-3418)
Design considerations for (AN-3418l
Switching capability (AN3418)
Turn-on time (AN-3418)
Silicon controlled rectifiers, product
matrix
206
298-307
206
206
206
206
206
206
359
361
359
359
360
359
206
18-21
206
206
138-250
252-348
Silicon controlled rectifiers

{technical datal
Silicon rectifiers (technical data)
Silicon controlled rectifiers, fast turn-off
(technical data), (File Nos. 408, 724)
Silicon rectifiers, fast-recovery
(technical datal. (File Nos. 663-665.
726-729,5801
Silicon rectifiers, capacItive-load
applications of (AN-3659)
Capacitor-input circuits (AN-3659)
Limiting resistance (AN3659)
Rating curves (AN-3659)
Rectifier current (AN-3659)
Silicon transistors for high-voltage
application lAN-3065l
Silicon transistors, high-current, n-p-n,
hometaxial II (technical data)
206
238,245
318-348
206
206
206
206
206
380
380
381
385
382
204
763
IFde Nos. 525, 5261

Silicon transistors, hIgh-voltage, n-p-n.
204
141-156
hometaxialll
(technical datal, (File No. 5281
Silicon transistors, medium-power
IF;le Nos. 527, 5291
Silicon triacs (technical datal
204
133
204
206
45,69
28-136
205
461
205
100,333,
216
207
186
202
206
206
206
204
57
451
453
454
(technical data), (File Nos. 331,340)

Speed controls, universal motors (AN-3697)
SPUriOUSnOise sources (I CAN-67321
Spurious nOise, suppression of (ICAN-6732)
Squelch control, COS/MOS IICAN-66021
Stability, conditions for lICAN-40721
Staircase generator, linear (lCAN-5641)
Stripline-package microwave power transistors
Ib~
203
158
201
440
201
247,432
228-256,
205
(technical datal. (File Nos. 543-546,
261-274,
626-628,640,641,6571
383-396,
401
440
Stripline power amplifier AN-3764
205
Stud-mounted rectifiers (technical data)
206
Surface leakage
Surge-protection resistance (rectifierl, (AN-3659)
calculation of (AN-3659)
207
200
16
301
206
206
385
206
430
447
344
Switching capability (SCR) (AN-3418)

Swtiching characteristic (of thyristors) (AN-4242)
Switching CirCUIts,onoff (AN-4537)
Switching regulator (AN-3065,
3616)
Switching-regulator ballasts (AN-3065, 3616)

Switching-regulator circuits components (AN-3616)
Switching-regulator reactor element (AN-3616)
Switching-regulator transistor (AN-36161
Switching SCR's and diodes (AN-3780)
Switching transistors (technical data)
Switching transistor, rf power, planar !technical
data, File Nos. 44, 56)
"Slash" sheets
Sound carrier amplification (ICAN-6544)

SpecIal-function sub-system, integrated-circuit
Stereo multiplex decoder, integrated-circuit

(technical datal. (File No. 502)
Stereo preampl ifier, integrated-circuit
(technical datal. (File Nos. 377, 387)
LUJ
206
203
281-293,
318-580
360
204
765,779
204
768,783
204
204
786
785
204
206
204
786
401
404-689
205
41,48
Symmetrical limiting, load impedance for
Slewing rate (ICAN-5641)

Snubber networks AN-4745
Basic circuit analysis AN-4745
Design procedure AN-4745
Solid-state ballasting circuits AN-3616
Solid-state relay AN-6141
Use of for power sWItching AN-6141
Advantages of AN-6141
SolId-state traffic flashes f1CAN-6182)
Solid-state traffic flashes (ICAN-6182)
:>/~I
Sw;tch, COS/MOS (lCAN-6080)

206
Single-sideband communications systems

IAN-45911
Single-sideband rf power transistor
(technical datal. (File Nos. 268, 551,484)
ts-stage\tecnnlcal Oatal, H-lie NO.
Static shift register, CaS/MaS, 64-stage

206
206
206
202
206
202
201
206
202
202
203
202
202
778
470
470
473
260
494
333
466,484
392
85
85
445
90
60
202
312
206
458
203
468
202
330
Tapers, -volume-control (lCAN-5841)

Temperature-control circuits (AN-6141)
202
206
331
Temperature controllers (ICAN-6182)

Electric-heat application lICAN-6182)
lntegral-cyde (ICAN-6182)
On-off (ICAN-61821
202
202
202
202
206
206
206
206
253
254
256
253
207
205
15
216
201
525
(ICAN-5380)
Synchronous switching, zero-vol tage (AN-6054)
Synthesizer system, FM (ICAN-67161
System gain (ICAN-5841)
Temperature controllers (ICAN-61821

Integral-cycle IICAN-6182)
On-off type IICAN-61821
Proportional type UCAN-6182)
Temperature, effect of on silicon transistors
Temperature-sensing diode (File No. 484)
Television video if system, integratedcircuit (technical data, File No. 467)
Television chroma system integratedcircuit (technical data, File Nos. 466, 468)
Test circuits and connections and dimensional
outlines for integrated circuits
Test set for safe-area measurements (AN-6145)
Construction (AN-61451
201
207
204
204
474
487
490
487
487
533,549
536
838
842
Subject Index
Controls and connections (AN-6145)

Operation (AN-6145)
Schematic diagram (AN-6145)
System design (AN-6145)
System philosophy (AN-6145)
Thermal
considerations
in thyristor
DATA
Page
DATA
BOOK
Nos.
BOOK
204
204
204
204
204
842
842
839
839
838
mounting
206
206
206
206
206
410
413
412
412
410
Thermal-eycling capability
Effect of assembly methods on
Effect of package materials on
Thermal-cycling capability, quantitative
measurement of (AN-6163)
Application requirements (AN-6163)
Failure analysis (AN-6163)
Practical testing (AN-6163)
Test conditions (AN-6163)
Realtime controls (AN-6163)
Test rack (AN-6163)
207
207
207
17
17
19,56
207
207
207
207
207
207
207
Thermal-cycling
207
58
58
58
59
60
62
63
18
(AN3822)
Chassis mounted heat sinks (AN-38221
Heat sink configurations (AN-3822)
Heat-sink mounting (AN-3822)
Power dissipation and heat-sink area (AN-3822)
rating chart
Thermal<ycling
rating system
(AN-4612, 4783, 61631
204
Rating chart (AN47831

Test program (AN-4783)
Thermal-cycling rating system (AN-4612)
Analysis of thermal fatigue in power transistors
(AN-4612)
Thermal-cycling rating chart (AN4612)
Thermal fatigue
Thermal-fatigue background (AN-47831
Thermal fatigue, power-transistor, analysis of
(AN-4612)
Thermal-fatigue testing
Thermal resistance, hot-spot (AN4774,
Three-phase heater control (AN-60541
6010)
Three1Jhase motor control (AN-6054)
204
204
207
823,831
846
831
831
53
207
207
207
204
831
204
207
823
19
205
206
206
53
53
17
472,475
458
461
Three-phase system. triac power control
Tratfic-signallamp
control, triac:
Circuits (AN-4537l
Surge current effects IAN-4537)
Triac operation (AN-4537)
Transfer charact~ristic. differential
( ICAN5380)
Transformers, transmission-line
Transient-free switch controller
Transient voltages (AN-6141)
206
206
206
(AN4591)
(AN-4537)
Transistor array, integrated-circuit:

Circuit applications (ICAN-5296)
Transistor array, integrated-eircuit high-current,
n-pn, display-driver applications of (ICAN-6733)
Transistor arrays, integrated-circuit, quick
278
204
318355
Transistor, rf power single-sideband

(technical data. File Nos. 268, 551)
205
100,333
204
102,141
204
45,69
Transistors,
(technical
Transistors,
(technical
high-power, silicon n-p-n types

data, File Nos. 524, 5251
medium-power, silicon n-p-n types
data, File Nos. 527,529)
Transistor structure intrinsic (AN-37551

Transistors. voltage ratings, interpretation
(AN6215)
Transistor-zener diode-diode
data, File No. 533)
430
206
206
206
206
28250
1
Triac gate characteristics

Triac product matrix
Tint-control amplifier,
(ICAN-6724)
472
integrated-eircuit
Traffic flasher, solid-state (ICAN-61821

(AN4537,ICAN6182)
202
202
206
349
260
448,494
429
204
856
array (technical
206
203
205
of
Triac controls for three-phase, power systems

(AN6054)
416
14
204
449
Thyristor voltage regulators, ac (AN-388s)

Timer, CaS/MOS. battery-operated,
digital-display (ICAN-6733)
476
Transistors, highvoltage, high-power, silicon

n-p-n (technical data. File Nos. 492, 509-513)
206
206
206
203
Transistors, high-voltage, medium-power

silicon n-p-n (technical data, File No. 508)
451
432
430
434
431
97
96
97
160
797
797
797
802
206
206
Thyristors. rectifiers, and other diodes

Thyristors. types of (AN-42421
Thyristor switching characteristics (AN42421
Thyristor voltage and temperature ratings (AN-42421
202
202
202
201
204
204
204
204
Thyristor
Thyristor
Thyristor
(technical data)
444
472
118-254
375
451
gated, bidirectional
206
201
206
206
Thyristors,
312
465
201
selection chart
charts (AN3551)
Thyristor circuits, snubber networks for (AN-4745)
Thyristors, characteristics and applications

(AN-4242)
202
205
206
Transistor arrays, integrated-circuit (technical

data)
Transistor power supplies, compact, 5volt
(AN-4509)
Basic concept (AN-4509)
Circuit elements (AN4509)
Design example (AN45091
206
206
206
206
206
206
flasher (AN4745)
gate characteristics (AN-4242)
power control (AN-4537)
446
444
444
amplifier
for:
Basic design rules (AN-6054)
Circuits (AN60541
Inductiveload systems (AN-60541
Isolation of dc logic circuitry (AN-6054)
Resistive-load systems (AN-60541
Trigger circuit (AN-6054)
Thyristor applications, circuit factors
456
461
460
459
459
456
Page
Nos.
201
152
Transmission of analog and digital signals

(ICAN-6101)
203
Transmission-line
203
360
384
reflections
(ICAN-617S)
Transmisison-line transformers (ICAN-4591)

Transmitter, output (ICAN-6210)
205
203
Triac applications, circuit factors charts (AN-3551)

Triac circuit, full-wave:
AC (AN3551)
DC (AN3551 1
Triac construction (AN-6141)
206
399
375
206
206
206
376
377
470
206
206
456
(AN-3697)
206
Triacs for use with IC zerovoltage switch

(File No. 406)
Triacs, isolated-tab (technical data, File No. 5401
Triacs, 400-Hz types (technical data, File Nos. 441,
443,487)
Triacs (technical datal
Triac voltage-current characteristic
Triple-tuned
(AN-3697)
interstage filter (ICAN-5380)
True/complement
buffer, COS&MOS
206
206
206
206
206
465
386
1417
47
79
41,99,
114
28136
202
386
313
203
203
quad
Subject Index
DATA
Page
DATA-
Page
BOOK
Nos.
BOOK
Nos.
Tuned amplifier, integrated circuit (ICAN5030)
202
142
Turn-on time definitions
206
359
(SCR) (AN3418)
202
TV circuits (ICAN-6544, 6724)

TV receiver (ICAN-6544)
202
206
Two-transistor analogv (of SeR) (AN-4242)
333,345
333
430
Biasing (ICAN5038)
Characteristics (leAN-5038)
Common-mode rejection (ICAN-5038)
Gain control (ICAN5038)
Harmonic distortion (IeAN5038)
Input and output impedance (leAN-503a)
Swing capability IICAN-5038)
Video amplifiers, integrated-circuit
(ICAN5296,
5338, 5015)
202
207
202
202
202
202
202
202
202
158
160
158
162
162
163
161
163
96,186
40
Video and wide-band amplifier, integrated-eircuit

(technical data. File Nos. 243, 363, 122)
U
UHF amplifier, single-ended (AN-6010l
205
479
UHF power generation (AN-37551

Package considerations (AN-3755)
Pulsed operation of rf power trans. (AN-3755)
Reliability considerations (AN-3755)
RF performance criteria (AN-3755)
Safe-area curves for rf power trans. (AN3755)
205
205
205
205
205
205
424
424
427
426
424
427
UHF power tronsistors, broadband applications

205
205
205
205
205
205
475
483
477
483
481
479
UHF power transistors, characteristics of (AN-6010)

Hot-spot thermal resistance (AN-601 0)
Overdrive capability (AN-6010)
Pulsed operation (AN-6010)
205
205
205
205
475
475
475
475
Ultor voltage (AN3780)
206
206
of IAN-6010)
Broadband amplifier chain (AN-6010)
Broadband circuit design approach (AN-6010)
Combined-transistor stage (AN-601 0)
Gain equalizer (AN-6010)
Single-ended amplifier (AN-601 0)
Universal motors (AN-3469)

Universal motor speed controls (AN-3469,
3697)
206
400
364
364,400
V
Variablefeedback volume-control circuits,
IICAN-5841 )
VCO, phase-locked (ICAN-6267)
VERSAWATT transistors, Darlington (technical
data, File Nos. 610, 693, 6941
VERSAWATT transistors, epitaxial-base, silicon
(technical data, File Nos. 676, 669, 671, 673, 678)
202
203
204
204
329
413
npn Itechnical data, File Nos. 322, 353, 485, 680)

VERSAWATT
transistors, silicon p-n-p, (technical
204
121,129
204
61,90
121,83
204
189,197,
data, File Nos. 667, 670,672,674,678,694)
294
Video detection, linear (ICAN~544)
Video detector, integrated-circuit (ICAN-6544)
Video if amplification (ICAN-6544)
Voltage:
Base-to-emitter
Collector-to-emitter saturation
Voltage breakdown, transistor (AN-6215l
Voltage and temperature ratings, triac (AN-6141)
Voltage-controlled oscillators (ICAN-6267)
Voltage-follower amplifier, CaS/MaS IICAN-6080)
202
333
202
202
336
207
207
204
206
203
333
15
15
856
472
413
344
Voltage follower, integrated-circuit (ICAN-5213)
203
202
Voltage ratings for transistors, interpretation of

(AN-6215)
Avalanche multiplication (AN-6215)
Common-base avalanche brea kdown (AN-6215l
Common~mitter avalanche breakdown (AN-6215)
Effect of circuit conditions (AN-6215)
Total alpha IAN-6215)
Transistor operating regions (AN-6215)
204
204
204
204
204
204
204
Voltage regulation (AN4558)
204
856
856
856
857
859
857
860
807
Voltage regulators, ac (AN-3886)
206
416
Voltage regulators, integrated-circuit (technical

data, Fire No. 491)
201
Voltage regulator, series type (AN-3065)
204
375
763
Volume-control circuit, conventional (ICAN-5841)

Volume-control circuit, feedback t'/pe (ICAN-5814)
202
329
202
202
329
329
202
202
329
331
202
202
202
202
202
202
202
177
186
178
180
180,185
185
179
202
202
202
201
194
191
194
268
202
202
201
202
Volume-control circuit, losser type (lCAN-5841)

Volume controls, types of (ICAN-5841)
Volume-control tapers (ICAN-5841)
53
177,193
transistors, high-current, silicon
n-p-n (technical data, File Nos. 485, 668)

VERSAWATT transistors, hometaxial-base silicon
276,282,
538,545
551
201,209
226
VERSAWATT
201
205,213,
226,551
VHF mixer, MOS-transistor (AN-3341)
Design considerations (AN-3341)
Design example (AN-3341 1
Maximum available gain (AN-3341)
Maximum usable gain (AN-3341)
202
202
202
202
202
362
362
363
364
364
Video amplifier, integrated-circuit (ICAN-5038)

Applications (ICAN5038)
202
202
158
163
W
Wideband multipurpose amplifier, integratedcircuit IICAN-5338)
Gain-frequency response (ICAN-5338)
Limiting IICAN-53381
Noise performance (ICAN5338)
Wideband multipurpose power amplifiers,
integrated circuit:
Circuit description and operation (ICAN5766)
Operating characteristics (ICAN5766)
Wideband video and if amplifier, integrated-circuit:
Bias modes IICAN5977)
Characteristics (ICAN-5977)
Circuit IICAN-5977)
Construction techniques (ICAN-597?)
Ratings (ICAN-5977)
Stability considerations (ICAN-5977)
Zero-voltage switches, integrated-circuit (ICAN~182)

Application considerations (ICAN~182)
Characteristics (technical data, File No. 490)
Circuit operation OCAN-6182)
Effect of thyristor load IICAN-6182)
Functional description (ICAN-6182)
Half-eycling effect (ICAN-61821
Hysteresis characteristics (ICAN-61821
Inductive-load switching IICAN-61 82)
202
202
202
202
202
201
202
202
201
202
202
202
202
202
202
DATA
Page
BOOK
Nos.
Interfacing techniques (ICAN-61821

Off-on sensing amplifier IICAN-6182)
Operating-power options (ICAN-6182)
Proportional control (ICAN--61821
Sensor isolation (ICAN-6182)
Temperature-controller application (ICAN-6182)
Thyristor-triggering
circuits (ICAN-6182)
202
202
202
202
202
202
202
241
244
245
247
252
253
243
Zerovoltage switches, int~grated circuit

(AN-6054,ICAN-61821
Application considerations (ICAN-6182)
Characteristics (AN-6054, ICAN-6182)
Circuit operation (tCAN-6182)
Effect of thyristor load IICAN-61821
Functional description (ICAN-6182)
Half-eycling effect (ICAN-6182)
Hysteresis characteristics (ICAN-6182)
Inductive loadswitching (ICAN-6182)
I nterfacing techniques (ICAN-6182)
Off.cn sensingamplifier (ICAN-61821
Operatingpower options (ICAN-6182)
Proportional controlllCAN61821
Sensor isolation (ICAN-6182)
Temperature-controller application (ICAN-6182)
Thyristortriggering circuits (ICAN-6182)
206
206
206
206
206
206
206
206
206
206
206
206
206
206
206
206
456,475
479
456,475
475
483
475
480
480
483
485
478
479
481
486
487
477
206
446
465
Zero-voltage switching (AN4537)

Zero-voltage switching, proportional (AN-6096)
Zero-voltage switches, integrated-eircuit (technical
data, File No. 490)
Zerovoltage switch, integrated-circuit (AN-60541
Zero-voltage synchronous switching (ICAN6182)
IAN-6054,ICAN-61821
206
201
338
206
202
456
266
206
458,500
1N441B
550-206
252
THC-500
AECT
1N5216
550-206
270
THC-500
245
AECT
1N442B
1N443B
1N444B
1N445B
1N536
550-206
550-206
550-206
550-206
550-206
252
252
252
252
255
THC-500
THC-500
THC-500
THC-500
THC-500
5
5
5
5
3
AECT
AECT
AECT
AECT
AECT
1N5217
1N5218
1N5391
1N5392
1N5393
550-206
550-206
550-206
550-206
550-206
270
270
273
273
273
THC-500
THC-500
THC-500
THC-500
THC-500
245
245
478
478
478
AECT
AECT
AECT
AECT
AECT
lN537
lN538
1N539
1N540
1N547
550-206
550-206
550-206
550-206
550-206
255
255
255
255
255
THC-500
THC-500
THC-500
THC-500
THC-500
3
3
3
3
3
AECT
AECT
AECT
AECT
AECT
1N5394
1N5395
1N5396
1N5397
1N5398
550-206
550-206
550-206
550-206
550-206
273
273
273
273
273
THC-500
THC-500
THC-500
THC-500
THC-500
478
478
478
478
478
AECT
AECT
AECT
AECT
AECT
1N1095
1N1183A
1N1184A
1N1186A
1N1187A
550-206
550-206
550-206
550-206
550-206
255
291
291
291
291
THC-500
THC-500
THC-500
THC-500
THC-500
3
38
38
38
38
AECT
AECT
AECT
AECT
AECT
1N5399
2N681
2N682
2N683
2N684
550-206
550-206
550-206
550-206
550-206
273
225
225
225
225
THC-500
THC-500
THC-500
THC-500
THC-500
478
96
96
96
96
AECT
5CA
5CA
5CA
5CA
1N1188A
1N1189A
1N1190A
1N1195A
lN1196A
550-206
550-206
550-206
550-206
550-206
291
291
291
287
287
THC-500
THC-500
THC-500
THC-500
THC-500
38
38
38
6
6
AECT
AECT
AECT
AECT
AECT
2N685
2N686
2N687
2N688
2N689
550-206
550-206
550-206
550-206
550-206
225
225
225
225
225
THC-500
THC-500
THC-500
THC-500
THC-500
96
96
96
96
96
5CA
5CA
5CA
5CA
5CA
1N1197A
1N1198A
1N1199A
1N1200A
1N1202A
550-206
550-206
550-206
550-206
550-206
287
287
283
283
283
THC-500
THC-500
THC-500
THC-500
THC-500
6
6
20
20
20
AECT
AECT
AECT
AECT
AECT
2N690
2N697
2N699
2N918
2N918
550-206
550-204
550-204
550-204
550-205
225
493
495
692
20
THC-500
PTO-187
PTO-187
AFT-700
AFT-700
96
16
22
83
83
5CA
PWA
PWA
AF
AF
1N1203A
1N1204A
1N1205A
1N1206A
1N1341B
550-206
550-206
550-206
550-206
550-206
283
283
283
283
281
THC-500
THC-500
THC-500
THC-500
THC-500
20
20
20
20
58
AECT
AECT
AECT
AECT
AECT
2N1491
2N1492
2N1493
2N1613
2N1711
550-205
550-205
550-205
550-204
550-204
24
24
24
498
503
AFT-700
AFT-lOO
AFT-700
PTO-187
PTO-187
10
10
10
106
26
AF
AF
AF
PWA
PWA
1N1342B
1N1344B
1N1345B
1N1346B
1N1347B
550-206
550-206
550-206
550-206
550-206
281
281
281
281
281
THC-500
THC-500
THC-500
THC-500
THC-500
58
58
58
58
58
AECT
AECT
AECT
AECT
AECT
2N1842A
2N1843A
2N1844A
2N1845A
2N1846A
550-206
550-206
550-206
550-206
550-206
234
234
234
234
234
THC-500
THC-500
THC-500
THC-500
THC-500
28
28
28
28
28
5CA
5CA
5CA
5CA
5CA
lN1348B
1N1763A
1N1764A
lN2858A
lN2859A
550-206
550-206
550-206
550-206
550-206
281
258
258
265
265
THC-500
THC-500
THC-500
THC-500
THC-500
58
89
89
91
91
AECT
AECT
AECT
AECT
AECT
2N1847A
2N1848A
2N1849A
2N1850A
2N1893
550-206
550-206
550-206
550-206
550-204
234
234
234
234
507
THC-500
THC-500
THC-500
THC-500
PTO-187
28
28
28
28
34
5CA
5CA
5CA
5CA
PWA
lN2860A
1N2861A
lN2862A
lN2863A
lN2864A
550-206
550-206
550-206
550-206
550-206
265
265
265
265
265
THC-500
THC-500
THC-500
THC-500
THC-500
91
91
91
91
91
AECT
AECT
AECT
AECT
AECT
2N2102
2N2102
2N2270
2N2405
2N2631
550-204
550-207
550-204
550-204
550-205
498
34
513
507
28
PTO-187
106
PTO-187
PTO-187
AFT-700
24
34
32
PWA
PWA
PWA
PWA
AF
1N3193
1N3194
1N3195
lN3196
1N3253
550-206
550-206
550-206
550-206
550-206
294
294
294
294
294
THC-500
THC-500
THC-500
THC-500
THC-500
41
41
41
41
41
AECT
AECT
AECT
AECT
AECT
2N2857
2N2857
2N2876
2N2895
2N2896
550-204
550-205
550-205
550-204
550-204
714
33
28
517
517
AFT-700
AFT-700
AFT-700
PTO-187
PTO-187
61
61
32
143
143
AF
AF
AF
PWA
PWA
1N3254
1N3255
1N3256
1N3563
1N3879
550-206
550-206
550-206
550-206
550-206
294
294
294
294
323
THC-500
THC-500
THC-500
THC-500
THC-500
41
41
41
41
726
AECT
AECT
AECT
AECT
AECT
2N2897
2N3053
2N3054
2N3054
2N3055
550-204
550-204
550-204
550-207
550-204
517
404
45
34
102
PTO-187
PTO-187
PTO-187
143
432
527
PTO-187
524
PWA
PWA
PWA
PWA
PWA
1N3880
1N3881
1N3882
1N3883
1N3889
550-206
550-206
550-206
550-206
550-206
323
323
323
323
331
THC-500
THC-500
THC-500
THC-500
THC-500
726
726
726
726
727
AECT
AECT
AECT
AECT
AECT
2N3118
2N3119
2N3228
2N3229
2N3262
550-205
550-205
550-206
550-205
550-205
37
41
144
45
48
AFT-700
AFT-700
THC-500
AFT-700
AFT-700
42
44
114
50
56
AF
AF
5CA
AF
AF
1N3890
1N3891
1N3892
1N3893
1N3899
550-206
550-206
550-206
550-206
550-206
331
331
331
331
339
THC-500
THC-500
THC-500
THC-500
THC-500
727
727
727
727
728
AECT
AECT
AECT
AECT
AECT
2N3263
2N3263
2N3264
2N3265
2N3266
550-204
550-207
550-204
550-204
550-204
475
35
475
475
475
PTO-187
54
PTO-187
PTO-187
PTO-187
54
54
54
1N3900
1N3901
1N3902
lN3903
lN3909
550-206
550-206
550-206
550-206
550-206
339
339
339
339
342
THC-500
THC-500
THC-500
THC-500
THC-500
728
728
728
728
729
AECT
AECT
AECT
AECT
AECT
2N3375
2N3439
2N3440
2N3441
2N3442
550-205
550-204
550-204
550-204
550-204
52
286
286
69
133
lN3910
1N3911
1N3912
1N3913
1N5211
550-206
550-206
550-206
550-206
550-206
342
342
342
342
270
THC-500
THC-500
THC-500
THC-500
THC-500
729
729
729
729
245
AECT
AECT
AECT
AECT
AECT
2N3478
2N3478
2N3525
2N3528
2N3529
550-204
550-205
550-206
550-206
550-206
696
60
144
144
144
AFT-700
PTO-187
PTO-187
PTO-187
PTO-187
AFT-700
AFT-700
THC-500
THC-500
THC-500
386
64
64
529
528
77
77
114
114
114
526
PWA
PWA
PWA
PWA
PWA
AF
PWA
PWA
PWA
PWA
AF
AF
5CA
5CA
5CA
Index to Devices
Type No.
DATA
BOOK
Vol. No.
Page
Catalog
File
No.
RF
PWR
PWR
PWR
RF
2N5298
2N5320
2N5320
2N5321
2N5322
550-204
550-204
550-207
550-204
550-204
61
429
38
429
429
PTO-187
PTO-187
322
325
PTO-187
PTO-187
325
325
PWR
PWR
PWR
PWR
PWR
83
386
408
408
408
RF
RF
5CR
5CR
5CR
2N5322
2N5323
2N5415
2N5416
2N5441
550-207
550204
550-204
550204
550206
39
429
292
292
55
PTO-187
PTO-187
PTO-187
THC500
325
336
336
593
PWR
PWR
PWR
PWR
TRI
THC-500
THC500
THC-500
THC-500
THC-500
408
724
724
724
724
5CR
5CR
5CR
5CR
5CR
2N5442
2N5443
2N5444
2N5445
2N5446
550-206
550-206
550-206
550-206
550-206
55
55
55
55
55
THC-500
THC-500
THC-500
THC-500
THC500
593
593
593
593
593
TRI
TRI
TRI
TRI
TRI
245
203
203
203
64
THC500
THC-500
THC500
THC-500
RFT700
724
116
116
116
72
5CR
5CR
5CR
5CR
RF
2N5470
2N5490
2N5491
2N5492
2N5493
550-205
550-204
550-204
550204
550204
140
90
90
90
90
RFT700
PTO-187
PTO187
PTO-187
PTO187
350
353
353
353
353
RF
PWR
PWR
PWR
PWR
550-204
550-204
550-204
550-207
550204
141
141
149
36
718
PTO-187
PTO187
PTO-187
525
525
526
RFT700
229
PWR
PWR
PWR
PWR
RF
2N5494
2N5495
2N5496
2N5497
2N5567
550-204
550204
550204
550-204
550206
90
90
90
90
92
PTO-187
PTO187
PTO-187
PTO187
THC-500
353
353
353
353
457
PWR
PWR
PWR
PWR
TRI
2N3839
2N3866
2N3870
2N3871
2N3872
550-205
550-205
550-206
550-206
550-206
69
73
218
218
218
RFT-700
RFT-700
THC-500
THC-500
THC-500
229
80
578
578
578
RF
RF
5CR
5CR
5CR
2N5568
2N5569
2N5570
2N5571
2N5572
550-206
550206
550206
550206
550206
92
92
92
85
85
THC500
THC-500
THC-500
THC-500
THC-500
457
457
457
458
458
TRI
TRI
TRI
TRI
TRI
2N3873
2N3878
2N3879
2N3879
2N3896
550206
550204
550-204
550-207
550-206
218
443
443
36
218
THC500
PTO187
PTO-187
578
299
299
550-206
550-206
550-204
550-204
550-207
85
85
162
162
39
458
458
359
359
578
2N5573
2N5574
2N5575
2N5578
2N5578
THC500
THC-500
PTO187
PTO187
THC-500
5CR
PWR
PWR
PWR
5CR
TRI
TRI
PWR
PWR
PWR
2N3897
2N3898
2N3899
2N4012
2N4036
550-206
550-206
550-206
550-205
550-204
218
218
218
77
410
THC-500
THC-500
THC-500
RFT-700
PTO187
578
578
578
90
216
5CR
5CR
5CR
RF
PWR
2N5671
2N5672
2N5754
2N5755
2N5756
550-204
550-204
550-206
550-206
550-206
481
481
28
28
28
PTO-187
PTO-187
THC500
THC500
THC500
383
383
414
414
414
PWR
PWR
TRI
TRI
TRI
2N4036
2N4037
2N4063
2N4064
2N4101
550-207
550-204
550-204
550204
550206
37
410
286
286
144
PTO187
PTO187
PTO187
THC-500
216
64
64
114
PWR
PWR
PWR
PWR
5CR
2N5757
2N5781
2N5781
2N5782
2N5783
550-206
550-204
550-207
550-204
550204
28
34
40
34
34
THC-500
PTO187
414
413
PTO-187
PTD-187
413
413
TRI
PWR
PWR
PWR
PWR
2N4102
2N4103
2N4240
2N4314
2N4347
550-206
55D-206
550-204
550204
550204
144
203
304
410
133
THC-500
THC-500
PTO-187
PTO187
PTO187
114
116
135
216
528
5CR
5CR
PWR
PWR
PWR
2N5784
2N5784
2N5785
2N5786
2N5804
550-204
550-207
550204
550204
550-204
34
40
34
34
379
PTO-187
413
PTO-187
PTD-187
PTO-187
413
413
407
PWR
PWR
PWR
PWR
PWR
2N4348
2N4427
2N4440
2N4932
2N4933
550-204
550-205
550205
550205
550-205
149
81
87
92
92
PTO-187
RFT-700
RFT700
RFT70o
RFT700
526
228
217
249
249
PWR
RF
RF
RF
RF
2N5805
2N5838
2N5839
2N5840
2N5913
550-204
550-204
550-204
550-204
550-205
379
356
356
356
146
PTO187
PTO-187
PTO-187
PTO-187
RFT700
407
410
410
410
423
PWR
PWR
PWR
PWR
RF
2N5016
2N5038
2N5039
2N5070
2N5071
550-205
550-204
550-204
550205
550-205
96
461
461
100
105
RFT-700
PTO-187
PTO-187
RFT700
RFT700
255
698
698
268
269
RF
PWR
PWR
RF
RF
2N5914
2N5915
2N5916
2N5917
2N5918
550-205
550-205
550-205
550-205
550-205
152
152
158
158
164
RFT-700
RFT700
RFT700
RFT700
RFT-700
424
424
425
425
448
RF
RF
RF
RF
RF
2N5090
2N5102
2N5109
2N5109
2N5179
550-205
550-205
550-204
550-205
550-204
109
113
722
118
700
RFT-700
RFT700
RFT700
RFT700
RFT-700
270
279
281
281
288
RF
RF
RF
RF
RF
2N5919A
2N5920
2N5921
2N5954
2N5954
550-205
550-205
550-205
550-204
550-207
169
175
181
170
41
RFT-700
RFT-700
RFT-700
PTO-187
505
440
427
675
RF
RF
RF
PWR
PWR
2N5179
2N5180
2N5189
2N5202
2N5239
550205
550-205
550-204
550-204
550-204
124
130
418
443
373
RFT-70o
RFT-70o
PTO-187
PTD-187
PTO-187
288
289
296
299
321
RF
RF
PWR
PWR
PWR
2N5955
2N5956
2N5992
2N5993
2N5994
550-204
550-204
550205
550-205
550-205
170
170
189
194
199
PTO187
PTO-187
RFT-7oo
RFT7oo
RFT7oo
675
675
451
452
453
PWR
PWR
RF
RF
RF
2N524o
2N524o
2N5262
2N5262
2N5262
550-204
550207
550-204
550-205
550-207
373
37
423
134
38
PTO-187
321
PTO-187
PTO-187
313
313
PWR
PWR
RF
RF
RF
2N5995
2N5996
2N6032
2N6033
2N6033
550205
550-205
550-204
550-204
550-207
205
210
487
487
41
RFT-700
RFT-7oo
PTO-187
PTO-187
454
455
462
462
RF
RF
PWR
PWR
PWR
2N5293
2N5294
2N5295
2N5296
2N5297
550-204
550-204
550-204
550-204
550204
PTO-187
PTO-187
PTO-187
PTO-187
PTO187
322
322
322
322
322
PWR
PWR
PWR
PWR
PWR
2N6055
2N6056
2N6056
2N6077
2N6078
550-204
550-204
550-207
550204
55Q204
527
527
42
318
318
PTO-187
PTO-187
563
563
PTO-187
PTO187
492
492
PWR
PWR
PWR
PWR
PWR
Type No.
DATA
BOOK
Vol. No.
Page
Catalog
File
No.
2N3553
2~!3583
2N3584
2N3585
2N3600
550-205
550-204
550-204
550-204
550204
52
304
304
304
692
RFT-700
PTO-187
PTO187
PTO-187
RFT700
386
138
138
138
83
2N3600
2N3632
2N3650
2N3651
2N3652
550205
550205
550-206
550-206
550206
20
52
238
238
238
RFT-700
RFT700
THC-500
THC-500
THC-500
2N3653
2N3654
2N3655
2N3656
2N3657
550-206
550206
550-206
550-206
550-206
238
245
245
245
245
2N3658
2N3668
2N3669
2N3670
2N3733
550206
550-206
550206
550-206
550205
2N3771
2N3772
2N3773
2N3773
2N3839
61
61
61
61
61
Product
Line
527
Product
Line
Index to Devices
DATA
DATA
Type No.
BOOK
Vol. No.
Page
Catalog
File
No.
484
485
485
PWR
PWR
RF
PWR
PWR
2N6472
2N6473
2N6474
2N6475
2N6476-
550-204
550204
550204
550-204
550-204
217
177
177
177
177
PTO187
PTO-187
PTO-187
PTO-187
PTO187
677
676
676
676
676
PWR
PWR
PWR
PWR
PWR
PTO187
PTO187
PTO-187
PTO-187
RFT700
485
485
485
485
504
PWR
PWR
PWR
PWR
RF
2N6477
2N6478
2N6479
2N6479
2N6480
550-204
550204
550-204
550-207
550-204
83
83
454
45
454
PTO187
PTO-187
PTO187
680
680
702
PTO-187
702
PWR
PWR
PWR
PWR
PWR
221
177
177
177
177
RFT700
PTO187
PTO-187
PTO-187
PTO-187
504
676
676
676
676
RF
PWR
PWR
PWR
PWR
2N6480
2N6481
2N6481
2N6482
2N6482
550207
550204
550207
550-204
550-207
45
454
45
454
45
PTO-187
702
PTO-187
702
550-204
550-204
550204
550204
550-204
177
177
278
278
278
PTO-187
PTO-187
PTO187
PTO187
PTO-187
676
676
508
508
508
PWR
PWR
PWR
PWR
PWR
2N6486
2N6487
2N6488
2N6489
2N6490
550204
550-204
550-204
550204
550204
226
226
226
226
226
PTO-187
PTO187
PTO-187
PTO-187
PTO-187
678
678
678
678
678
PWR
PWR
PWR
PWR
PWR
2N6178
2N6179
2N6180
2N6181
2N6211
550-204
550204
550-204
550-204
550-204
435
435
435
435
312
PTO-187
PTO187
PTO-187
PTO-187
PTO-187
562
562
562
562
507
PWR
PWR
PWR
PWR
PWR
2N6491
2N6496
3N128
3N138
3N139
550-204
550-204
550201
550-201
550201
226
461
634
639
643
PTO-187
PTO-187
M05-160
M05160
M05-160
678
698
309
283
284
PWR
PWR
M05/FET
M05/FET
M05/FET
2N6212
2N6213
2N6214
2N6246
2N6247
550204
550204
550204
550-204
550204
312
312
312
217
217
PTO-187
PTO-187
PTO187
PTO187
PTO187
507
507
507
677
677
PWR
PWR
PWR
PWR
PWR
3N140
3N141
3N142
3N143
3N152
550-201
550201
550-201
550-201
550-201
667
667
648
634
654
M05-160
M05-160
M05160
M05-160
M05-160
285
285
286
309
314
M05/FET
M05/FET
M05/FET
M05/FET
M05/FET
2N6248
2N6248
2N6249
2N6250
2N6251
550204
550207
550204
550204
550-204
217
43
385
385
385
PTO-187
677
PTO187
PTO-187
PTO187
523
523
523
PWR
PWR
PWR
PWR
PWR
3N153
3N154
3N159
3N187
3N200
550-201
550-201
550-201
550201
550-201
659
662
675
690
698
M05160
M05-160
M05-160
M05160
M05160
320
335
326
436
437
M05/FET
M05/FET
M05/FET
M05/FET
M05/FET
2N6251
2N6253
2N6254
2N6257
2N6258
550-207
550-204
550-204
550-204
550-204
43
102
102
141
141
PTO-187
PTO187
PTO-187
PTO-187
524
524
525
525
PWR
PWR
PWR
PWR
PWR
40080
40081
40082
40279
40280
550205
550205
550-205
550207
550-205
275
275
275
119
279
RFT-700
RFT700
RFT700
RFT700
RFT700
301
301
301
46
68
RF
RF
RF
RF
RF
2N6259
2N6260
2N6261
2N6262
2N6263
550204
550204
550204
550-204
550204
149
45
45
133
69
PTO-187
PTO-187
PTO-187
PTO187
PTO-187
526
527
527
528
529
PWR
PWR
PWR
PWR
PWR
40281
40282
40290
40291
40292
550-205
550205
550-205
550-205
550-205
279
279
283
283
283
RFT-700
RFT700
RFT700
RFT700
RFT-700
68
68
70
70
70
RF
RF
RF
RF
RF
2N6264
2N6265
2N6266
2N6267
2N6268
550204
550-205
550-205
550-205
550-205
69
228
234
240
246
PTO-187
RFT-700
RFT-700
RFT-700
RFT-700
529
543
544
545
546
PWR
RF
RF
RF
RF
40294
40296
40305
40306
40307
550-207
550-207
550-207
550-207
550-207
123
130
137
137
137
RFT-700
RFT700
RFT-700
RFT700
RFT-700
202
603
144
144
144
RF
RF
RF
RF
RF
2N6269
2N6288
2N6289
2N6290
2N6291
550-205
550-204
550204
550-204
550204
246
177
177
177
177
RFT-700
PTO187
PTO-187
PTO-187
PTO187
546
676
676
676
676
RF
PWR
PWR
PWR
PWR
40309
40310
40311
40312
40313
550-204
550-204
550-204
550-204
550204
655
655
655
655
655
PTO187
PTO-187
PTO-187
PTO-187
PTO187
78
78
78
78
78
PWR
PWR
PWR
PWR
PWR
2N6292
2N6293
2N6354
2N6371
2N6372
550204
550-204
550-204
550204
550-204
177
177
149
97
170
PTO-187
PTO-187
PTO-187
PTO-187
PTO-187
676
676
582
607
675
PWR
PWR
PWR
PWR
PWR
40314
40315
40316
40317
40318
550-204
550-204
550-204
550204
550-204
655
655
655
655
655
PTO-187
PTO-187
PTO-187
PTO-187
PTO-187
78
78
78
78
78
PWR
PWR
PWR
PWR
PWR
2N6373
2N6374
2N6383
2N6384
2N6385
550204
550204
550204
550-204
550-204
170
170
532
532
532
PTO-187
PTO-187
PTO-187
PTO187
PTO187
675
675
609
609
609
PWR
PWR
PWR
PWR
PWR
40319
40320
40321
40322
40323
550-204
550-204
550-204
550-204
550-204
655
655
655
655
655
PTO187
PTO187
PTO187
PTO187
PTO-187
78
78
78
78
78
PWR
PWR
PWR
PWR
PWR
2N6385
2N6386
2N6387
2N6388
2N6389
550207
550204
550-204
550-204
550-204
44
538
538
538
732
PTO-187
PTO-187
PTO-187
RFT-700
610
610
610
617
PWR
PWR
PWR
PWR
RF
40324
40325
40326
40327
40328
550-204
550-204
550-204
550-204
550-204
655
655
655
655
655
PTO-187
PTO-187
PTO-187
PTO187
PTO-187
78
78
78
78
78
PWR
PWR
PWR
PWR
PWR
2N6389
2N6390
2N6391
2N6392
2N6393
550-205
550-205
550-205
550-205
550-205
257
261
265
270
270
RFT-700
RFT-700
RFT-700
RFT-700
RFT-700
617
626
627
628
628
RF
RF
RF
RF
RF
40340
40341
40346
40346V1
40346V2
550-205
550-205
550-204
550-204
550-204
287
287
393
393
393
RFT-700
RFT700
PTO-187
PTO-187
PTO-187
74
74
211
211
211
RF
RF
PWR
PWR
PWR
2N6467
2N6468
2N6469
2N6470
2N6471
550-204
550204
550204
550204
550-204
170
170
217
217
217
PTO-187
PTO-187
PTO187
PTO187
PTO-187
675
675
677
677
677
PWR
PWR
PWR
PWR
PWR
40347
40347V1
40347V2
40348
40348V1
550-204
550-204
550-204
550-204
550204
26
26
26
26
26
PTO187
PTO187
PTO-187
PTO-187
PTO-187
88
88
88
88
88
PWR
PWR
PWR
PWR
PWR
Type No.
BOOK
Vol. No.
Page
Catalog
File
No.
2N6079
2N6079
2N6093
2N6098
2N6099
550204
550207
550-205
550-204
550204
318
42
216
121
121
PTO-187
492
RFT-700
PTO-187
PTO187
2N6100
2N6101
2N6102
2N6103
2N6104
550204
550-204
550-204
550204
550205
121
121
121
121
221
2N6105
2N6106
2N6107
2N6108
2N6109
550205
550204
550-204
550-204
550-204
2N6110
2N6111
2N6175
2N6176
2N6177
Product
Line
528
Product
Line
PWR
PWR
PWR
PWR
PWR
Index to Devices
DATA
Type No.
BOOK
Vol. No.
Page
Catalog
File
No.
DATA
Product
Line
Type No.
BOOK
Vol. No.
Page
Catalog
File
No.
Product
463
464
464
465
465
MOS/FET
MOS/FET
MOS/FET
MOS/FET
MOS/FET
Line
40348V2
40349
40349Vl
40349V2
40360
SSD-204
SSO-204
SSO-204
SSO-204
SSO-204
26
26
26
26
655
PTO-187
PTO-187
PTO-187
PTO-187
PTO-187
88
88
88
88
78
PWR
PWR
PWR
PWR
PWR
40819
40820
40821
40822
40823
SSO-201
SSO-201
SSO-201
SSO-201
SSO-201
704
724
724
732
732
MOS-160
MOS-160
MOS-160
MOS-160
MOS-160
40361
40362
40363
40364
40366
SSO-204
SSO-204
SSO-204
SSO-204
SSO204
655
655
655
655
397
PTO-187
PTO-187
PTO-187
PTO-187
PTO-187
78
78
78
78
215
PWR
PWR
PWR
PWR
PWR
40829
40830
40831
40836
40837
SSO-204
SSO-204
SSO-204
SSO205
SSO-205
170
170
170
298
298
PTO-187
PTO-187
PTO-187
RFT-700
RFT-700
675
675
675
497
497
PWR
PWR
PWR
RF
RF
40367
40368
40369
40372
40373
SSO-204
SSO-204
SSO-204
SSO-204
SSO-204
397
397
397
45
69
PTO-187
PTO-187
PTO-187
PTO-187
PTO-187
215
215
215
527
529
PWR
PWR
PWR
PWR
PWR
40841
40850
40851
40852
40853
SSO-201
SSO-204
SSO-204
SSO-204
SSO-204
739
368
368
368
368
MOS-160
PTO-187
PTO-187
PTO-187
PTO-187
489
498
498
498
498
MOS/FET
PWR
PWR
PWR
PWR
40374
40375
40385
40389
40390
SSO-204
SSO-204
SSO-204
SSO-204
SSO-204
304
443
397
404
286
PTO-187
PTO-187
PTO-187
PTO-187
PTO-187
128
299
215
432
64
PWR
PWR
PWR
PWR
PWR
40854
40871
40872
40873
40874
SSO-204
SSO-204
SSO-204
SSO-204
SSO-204
368
685
685
685
685
PTO-187
PTO-187
PTO-187
PTO-187
PTO-187
498
699
699
699
699
PWR
PWR
PWR
PWR
PWR
40391
40392
40394
40406
40407
SSO-204
SSO-204
SSO204
SSO-204
SSO-204
410
404
410
661
661
PTO-187
PTO-187
PTO-187
PTO-187
PTO-187
216
432
216
219
219
PWR
PWR
PWR
PWR
PWR
40875
40876
40885
40886
40887
SSO-204
SSO-204
SSO-204
SSO-204
SSO-204
685
685
278
278
278
PTO-187
PTO-187
PTO-187
PTO-187
PTO-187
699
699
508
508
508
PWR
PWR
PWR
PWR
PWR
40408
40409
40410
40411
40412
SSO-204
SSO-204
SSO-204
SSO-204
SSO-204
661
661
661
661
393
PTO-187
PTO-187
PTO-187
PTO-187
PTO-187
219
219
219
219
211
PWR
PWR
PWR
PWR
PWR
40893
40894
40894
40895
40895
SSO-205
SSO-204
SSO-205
SSO-204
SSO-205
304
706
309
706
309
RFT-700
RFT-700
RFT-700
RFT-700
RFT-700
514
548
548
548
548
RF
RF
RF
RF
RF
40412Vl
40412V2
40414
40446
40467A
SSO-204
SSO-204
SSO-207
SSO-205
SSO-201
393
393
142
275
681
PTO-187
PTO-187
RFT-700
RFT-700
MOS-160
211
211
259
301
324
PWR
PWR
RF
RF
MOS/FET
40896
40896
40897
40897
40898
SSO-204
SSO-205
SSO-204
SSO-205
SSO-205
706
309
706
309
313
RFT-700
RFT-700
RFT-700
RFT-700
RFT-700
548
548
548
548
538
RF
RF
RF
RF
RF
40468A
40537
40538
40539
40542
SSO-201
SSO-204
SSO-204
SSO-204
SSO-204
686
668
668
671
675
MOS-160
PTO-187
PTO-187
PTO-187
PTO-187
323
320
320
303
304
MOS/FET
PWR
PWR
PWR
PWR
40899
40909
40910
40911
40912
SSO-205
SSO-205
SSO-204
SSO-204
SSO-204
313
321
45
45
69
RFT700
RFT-700
PTO-187
PTO-187
PTO-187
538
547
527
527
529
RF
RF
PWR
PWR
PWR
40543
40544
40559A
40577
40578
SSO-204
SSO-204
SSO-201
SSO-207
SSO-207
675
671
686
148
155
PTO-187
PTO-187
MOS-160
RFT-700
RFT-700
304
303
323
297
298
PWR
PWR
MOS/FET
RF
RF
40913
40915
40915
40934
40936
SSO-204
SSO-204
SSO-205
SSO-205
SSO-205
69
710
325
329
333
PTO-187
RFT-700
RFT-700
RFT-700
RFT-700
529
574
574
550
551
PWR
RF
RF
RF
RF
40581
40582
40594
40595
40600
SSO-205
SSO-205
SSO-204
SSO-204
SSO-201
275
275
681
681
712
RF1'700
RFT-700
PTO-187
PTO-187
MOS-160
301
301
358
358
333
RF
RF
PWR
PWR
MOS/FET
40601
40602
40603
40604
40605
SSO-201
SSO-201
SSO-201
SSO-201
SSO-207
712
712
720
720
161
MOS-160
MOS-160
MOS-160
MOS-160
RFT-700
333
333
334
334
389
MOSIFET
MOSIFET
MOSIFET
MOS/FET
RF
40940
40941
40953
40954
40955
40964
40965
40967
40968
40970
SSO-205
SSO-205
SSO-205
SSO-205
SSO-205
SSO205
SSO205
SSO-205
SSO-205
SSO-205
337
342
346
346
346
351
351
355
355
359
RFT-700
R FT-700
RFT-700
RFT-700
RFT-700
RFT-700
RFT-700
RFT-700
RFT-700
RFT-700
553
554
579
579
579
581
581
596
596
656
RF
RF
RF
RF
RF
RF
RF
RF
RF
RF
40606
40608
40608
40611
40613
SSO-207
SSO-204
SSO-205
SSO-204
SSO-204
168
728
291
681
681
RFT-700
RFT-700
RFT-700
PTO-187
PTO-187
600
356
356
358
358
RF
RF
RF
PWR
PWR
40971
40972
40973
40974
40975
SSO-205
SSO-205
SSO-205
SSO-205
SSO-205
359
365
365
365
369
RFT-700
RFT-700
RFT-700
RFT700
RFT700
656
597
597
597
606
RF
RF
RF
RF
RF
40616
40618
40621
40622
40624
SSO-204
SSO-204
SSO-204
SSO-204
SSO-204
681
681
681
681
681
PTO-187
PTO-187
PTO-187
PTO-187
PTO-187
358
358
358
358
358
PWR
PWR
PWR
PWR
PWR
40976
40977
41008
41008A
41009
SSO-205
SSO-205
SSO-205
SSO-205
SSO-205
369
369
373
373
373
RFT-700
RFT-700
RFT-700
RFT-700
RFT-700
606
606
616
616
616
RF
RF
RF
RF
RF
40625
40627
40628
40629
40630
SSO-204
SSO-204
SSO-204
SSO-204
SSO-204
681
681
681
681
681
PTO-187
PTO-187
PTO-187
PTO-187
PTO-187
358
358
358
358
358
PWR
PWR
PWR
PWR
PWR
41009A
41010
41024
41025
41026
SSO-205
SSO-205
SSO-205
SSO-205
SSO-205
373
373
379
383
383
RFT-700
RFT-700
RFT-700
RFT-700
RFT-700
616
616
658
641
641
RF
RF
RF
RF
RF
40631
'~0632
40633
40634
40635
SSO-204
SSO-204
SSO-204
SSO-204
SSO-204
681
681
681
681
681
PTO-187
PTO-187
PTO-187
PTO-187
PTO-187
358
358
358
358
358
PWR
PWR
PWR
PWR
PWR
41027
41028
41038
41508
45190
SSO-205
SSO-205
SSO-205
SSO-204
SSO-204
390
390
397
157
273
RFT-700
RFT-700
RFT-700
PTO-187
PTO-187
640
640
679
622
559
RF
RF
RF
PWR
PWR
40636
40637A
40665
40666
40673
SSO-204
SSO-205
SSO-205
SSO-205
SSO-201
681
295
52
52
745
PT '-i37
RF- i:',}()
RFT/00
RFT-7UO
MOS-160
358
655
386
386
381
PWR
RF
RF
RF
MOS/FET
45191
45192
45193
45194
45195
SSO-204
SSO-204
SSO-204
SSO-204
SSO-204
273
273
273
273
273
PTO-187
PTO-187
PTO-187
PTO-187
PTO-187
559
559
559
559
559
PWR
PWR
PWR
PWR
PWR
529
B0183
B0239
550-204
550-204
115
193
700
669
PWR
PWR
CA1558T
CA2111AE
550-201
550-201
74
520
COL-820
COL-820
531
612
L1C
L1C
B0239A
B0239B
B0239C
B0240
B0240A
550-204
550-204
550-204
550-204
550-204
193
193
193
197
197
669
669
669
670
670
PWR
PWR
PWR
PWR
PWR
CA2111AQ
CA3000
CA3000/1-4
CA3000H
CA3001
550-201
550-201
550-207
550-201
550-201
520
288
196
590
294
COL-820
COL-820
612
121
705
516
122
L1C
L1C
L1C
L1C
L1C
B0240B
B0240C
B0241
B0241A
B0241B
550-204
550-204
550-204
550-204
550-204
197
197
201
201
201
670
670
671
671
671
PWR
PWR
PWR
PWR
PWR
CA3001/1-4
CA3001 H
CA3002
CA3002/1-4
CA3002H
550-207
550-201
550-201
550-207
550-201
203
590
256
210
590
714
516
123
713
516
L1C
L1C
L1C
L1C
L1C
B0241C
B0242
B0242A
B0242B
B0242C
550-204
550-204
550-204
550-204
550-204
201
205
205
205
205
671
672
672
672
672
PWR
PWR
PWR
PWR
PWR
CA3004
CA3004/1-4
CA3005
CA3005H
CA3006
550-201
550-207
550-201
550-201
550-201
300
216
306
590
306
COL-820
COL-820
COL-820
COL-820
124
712
125
516
125
L1C
L1C
L1C
L1C
L1C
B0243
B0243A
B0243B
B0243C
B0244
550-204
550-204
550-204
550-204
550-204
209
209
209
209
213
673
673
673
673
674
PWR
PWR
PWR
PWR
PWR
CA3007
CA3008
CA3008A
CA3010
CA3010A
550-201
550-201
550-201
550-201
550-201
313
80
89
80
89
COL-820
COL-820
COL-820
COL-820
COL-820
126
316
310
316
310
L1C
L1C
L1C
L1C
L1C
B0244A
B0244B
B0244C
B0277
B0278
550-204
550-204
550-204
550-204
550-204
213
213
213
189
129
674
674
674
667
668
PWR
PWR
PWR
PWR
PWR
CA3011
CA3012
CA3012H
CA3013
CA3014
550-201
550-201
550-201
550-201
550-201
262
262
590
471
471
COL-820
COL-820
COL-820
COL-820
COL-820
128
128
516
129
129
L1C
L1C
L1C
L1C
L1C
BOX33
BOX33A
BOX33B
BOX33C
BOX34
550-204
550-204
550-204
550-204
550-204
545
545
545
545
551
693
693
693
693
694
PWR
PWR
PWR
PWR
PWR
CA3015
CA3015A
CA3015A11-4
CA3015H
CA3015L
550-201
550-201
550-207
550-201
550-201
80
89
222
590
605
COL-820
COL-820
COL-820
COL-820
316
310
715
516
515
L1C
L1C
L1C
L1C
L1C
BOX34A
BOX34B
BOX34C
BFT19
BFT19A
550-204
550-204
550-204
550-204
550-204
551
551
551
298
298
694
694
694
683
683
PWR
PWR
PWR
PWR
PWR
CA3016
CA3016A
CA3018
CA30~oA
CA3ll18H
550-201
550-201
550-201
550-201
550-201
80
89
160
160
590
COL-820
COL-820
COL-820
COL-820
COL-820
316
310
338
338
516
L1C
L1C
L1C
L1C
L1C
BFT19B
BU106
CA108A5
CA108AT
CA1085
550-204
550-204
550-201
550-201
550-201
298
363
105
105
105
683
716
621
621
621
PWR
PWR
L1C
L1C
L1C
CA3018L
CA3019
CA3019/1-4
CA3019H
CA3020
550-201
550-201
550-207
550-201
550-201
605
118
229
590
268
COL-820
COL-820
COL-820
COL-820
COL-820
COL-820
COL-820
515
236
722
516
339
L1C
L1C
L1C
L1C
L1C
CA108T
CA208A5
CA208AT
CA2085
CA208T
550-201
550-201
550-201
550-201
550-201
105
105
105
105
105
COL-820
COL-820
COL-820
COL-820
COL-820
621
621
621
621
621
L1C
L1C
L1C
L1C
L1C
CA3020A
CA3020H
CA3021
CA3022
CA3023
550-201
550-201
550-201
550-201
550-201
268
590
276
276
276
COL-820
COL-820
COL-820
COL-820
COL-820
339
516
243
243
243
L1C
L1C
L1C
L1C
L1C
CA308A5
CA308AT
CA308H
CA3085
CA308T
550-201
550-201
550-201
550-201
550-201
105
105
590
105
105
COL-820
COL-820
COL-820
COL-820
COL-820
621
621
516
621
621
L1C
L1C
L1C
L1C
L1C
CA3023H
CA3026
CA3026/1-4
CA3026H
CA3028A
550-201
550-201
550-207
550-201
550-201
590
226
235
590
318
COL-820
COL-820
COL-820
COL-820
516
388
706
516
382
L1C
L1C
L1C
L1C
L1C
CA741/1-4
CA741CH
CA741C5
CA741CT
CA741 L
550-207
550-201
550-201
550-201
550-201
188
590
74
74
605
COL-820
COL-820
COL-820
COL-820
718
516
531
531
515
L1C
L1C
L1C
L1C
L1C
CA3028AF
CA3028AH
CA3028AL
CA3028A5
CA3028B
550-201
550-201
550-201
550-201
550-201
318
590
605
318
318
COL-820
COL-820
COL-820
COL-820
COL-820
382
516
515
382
382
L1C
L1C
L1C
L1C
L1C
CA7415
CA741T
CA747/1-4
CA747CE
CA 747CF
550-201
550-201
550-207
550-201
550-201
74
74
188
74
74
COL-820
COL-820
531
531
718
531
531
L1C
L1C
L1C
L1C
L1C
CA3028B/1-4
CA3028BF
CA3028B5
CA3029
CA3029A
550-207
550-201
550-201
550-201
550-201
243
318
318
80
89
COL-820
COL-820
COL-820
COL-820
711
382
382
316
310
L1C
L1C
L1C
L1C
L1C
CA 747CH
CA747CT
CA747E
CA747F
CA747T
550-201
550-201
550-201
550-201
550-201
590
74
74
74
74
COL-820
COL-820
COL-820
COL-820
COL-820
516
531
531
531
531
L1C
L1C
L1C
L1C
L1C
CA3030
CA3030A
CA3033
CA3033A
CA3033H
550-201
550-201
550-201
550-201
550-201
80
89
61
61
590
COL-820
COL-820
COL-820
COL-820
COL-820
316
310
360
360
516
L1C
L1C
L1C
L1C
L1C
CA748/1-4
CA748CH
CA748C5
CA748CT
CA7485
550-207
550-201
550-201
550-201
550-201
188
590
74
74
74
COL-820
COL-820
COL-820
COL-820
718
516
531
531
531
L1C
L1C
L1C
L1C
L1C
CA3035
CA3035H
CA3035Vl
CA3036
CA3037
550-201
550-201
550-201
550-201
550-201
243
590
243
158
80
COL-820
COL-820
COL-820
COL-820
COL-820
274
516
274
275
316
L1C
L1C
L1C
L1C
L1C
CA748T
CA1398E
CA14585
CA1458T
CA15410
550-201
550-201
550-201
550-201
550-201
74
573
74
74
395
COL-820
COL-820
COL-820
COL-820
COL-820
531
686
531
531
536
L1C
L1C
L1C
L1C
L1C
CA3037A
CA3038
CA3038A
CA3039
CA3039/1-4
550-201
550-201
550-201
550-201
550-207
89
80
89
122
250
COL-820
COL-820
COL-820
COL-820
310
316
310
343
704
L1C
L1C
L1C
L1C
L1C
COL-820
COL-820
530
COL-820
COL-820
COL-820
COL-820
COL-820
I ndex to Devices
DATA
Type No.
BOOK
Vol. No.
Page
Catalog
File
No.
CA3039H
CA3039L
CA3040
CA3041
CA3042
550-201
550-201
550-201
550201
550-201
590
605
282
498
506
COL-820
COL-820
COL-820
COL-820
COL-820
516
515
363
318
319
CA3043
CA3043H
CA3044
CA3044V1
CA3045
550201
550-201
550-201
550-201
550201
466
590
484
484
177
COL-820
COL-820
COL-820
COL-820
COL-820
CA3045/1-4
CA3045F
CA3045H
CA3045L
CA3046
550-207
550-201
550201
550-201
550-201
255
177
590
605
177
COL820
COL-820
COL-820
COL820
CA3047
CA3047A
CA3048
CA3048H
CA3049/1-4
550-201
550-201
550-201
550-201
550-207
61
61
247
590
263
CA3049H
CA3049L
CA3049T
CA3050
CA3051
550-201
550-201
550-201
550-201
550-201
CA3052
CA3053
CA3053F
CA30535
CA3054
550-201
550-201
550-201
550-201
550-201
DATA
Product
Line
Type No.
BOOK
Vol. No.
Page
Catalog
L1C
L1C
L1C
L1C
L1C
CA3084L
CA3085
CA3085/1-4
CA3085A
CA3085A/14
550-201
550201
550-207
550-201
550-207
605
375
285
375
285
COL-820
COL-820
331
516
340
340
341
L1C
L1C
L1C
L1C
L1C
CA3085AF
CA3085A5
CA3085B
CA3085B/1-4
CA3085BF
550-201
550201
550-201
550-207
550-201
375
375
375
285
375
COL-820
COL820
COL820
710
341
516
515
341
L1C
L1C
L1C
L1C
L1C
CA3085B5
CA3085F
CA3085H
CA3085L
CA30855
550-201
550-201
550-201
550-201
550-201
375
375
590
605
375
COL-820
COL-820
COL-820
COL820
360
360
377
516
707
L1C
L1C
L1C
L1C
L1C
CA3086
CA3086F
CA3088E
CA3089E
CA3090AQ
550201
550-201
550-201
550201
550-201
590
605
234
329
329
COL-820
COL-820
COL-820
COL-820
COL-820
516
515
611
361
361
L1C
L1C
L1C
L1C
L1C
CA30910
CA3091 H
CA3093E
CA3093H
CA3094/1-4
432
318
318
318
226
COL-820
COL-820
COL-820
COL-820
COL-820
387
382
382
382
388
L1C
L1C
L1C
L1C
L1C
File
No.
Product
line
515
491
708
491
708
L1C
L1C
L1C
L1C
L1C
COL-820
491
491
491
708
491
L1C
L1C
L1C
L1C
L1C
COL820
COL-820
COL820
COL-820
COL820
491
491
516
515
491
L1C
L1C
L1C
LIC
L1C
183
183
446
455
440
COL820
COL-820
COL-820
COL820
COL-820
483
483
560
561
684
L1C
L1C
L1C
L1C
L1C
550-201
550-201
550-201
550-201
550-207
383
590
152
590
291
COL-820
COL-820
COL-820
COL-820
534
516
533
516
692
L1C
L1C
L1C
L1C
L1C
CA3094A/1-4
CA3094AT
CA3094B/1-4
CA3094BT
CA3094H
550-207
550-201
550-207
550-201
550-207
291
346
291
346
590
COL-820
COL-820
692
598
692
598
516
L1C
L1C
L1C
L1C
L1C
346
189
141
141
590
COL820
COL-820
COL820
COL820
COL820
598
591
595
595
516
L1C
L1C
L1C
L1C
L1C
COL-820
COL-820
COL-820
516
515
490
703
490
L1C
L1C
L1C
L1C
L1C
CA3094T
CA3095E
CA3096AE
CA3096E
CA3096H
550-201
550-201
550-201
550-201
550-201
COL-820
COL-820
COL-820
COL-820
COL-820
516
537
537
537
537
L1C
L1C
L1C
L1C
L1C
CA3097E
CA3097H
CA3099E
CA3099H
CA3100H
550201
550-201
550-201
550-201
550-201
199
590
359
590
590
COL-820
COL-820
COL820
COL-820
COL-820
633
516
620
516
516
L1C
L1C
L1C
L1C
L1C
590
367
490
490
514
COL-820
COL-820
COL-820
COL-820
COL-820
516
421
396
396
412
L1C
L1C
L1C
L1C
L1C
CA31005
CA3100T
CA3102E
CA3102H
CA3118AT
550-201
550-201
550-201
550201
550-201
98
98
234
590
166
COL-820
COL-820
COL-820
COL-820
COL.8jO
625
625
611
516
532
L1C
L1C
L1C
L1C
L1C
550-201
550-201
550-201
550-201
550-201
533
533
525
549
549
COL-820
COL-820
COL-820
COL-820
COL-820
466
466
467
468
468
L1C
L1C
L1C
L1C
L1C
CA3118H
CA3118T
CA3120E
CA3121 E
CA3123E
550-201
550-201
550-201
550-201
550-201
590
166
5S1
567
450
COL-820
COL-820
COL-820
COL-820
COL-820
516
532
691
688
631
L1C
L1C
L1C
L1C
L1C
CA30n
CA3075
CA3075H
CA3076
CA3076H
550-201
550-201
550-201
550-201
550-201
549
462
590
479
590
COL-820
COL-820
COL-820
COL820
COL-820
468
429
516
430
516
L1C
L1C
L1C
L1C
L1C
CA3125E
CA3126Q
CA3140E
CA3140H
CA3146AE
550-201
550-201
550-201
550-201
550-201
577
565
113
590
166
COL-820
COL-820
COL-820
COL-820
COL820
685
Pre!.
630
516
532
L1C
L1C
L1C
L1C
L1C
CA3078A5
CA3078AT
CA3078H
CA30785
CA3078T
550-201
550-201
550-201
550-201
550-201
52
52
590
52
52
COL-820
COL-820
COL-820
COL-820
COL-820
535
535
516
535
535
L1C
L1C
L1C
L1C
L1C
CA3146E
CA3146H
CA3183AE
CA3183E
CA3183H
550201
550-201
550-201
550-201
550-201
166
590
166
166
590
COL-820
COL-820
COL820
COL-820
COL-820
532
516
532
532
516
L1C
L1C
L1C
L1C
L1C
CA3079
CA3080
CA3080/1-4
CA3080A
CA3080A/14
550-201
550-201
550-207
550-201
550-207
338
30
277
30
277
COL-820
COL-820
490
475
709
475
709
L1C
L1C
L1C
L1C
L1C
CA3401
CA3600E
CA6078A5
CA6078AT
CA67415
550-201
550-201
550-201
550201
550-201
113
213
69
69
69
COL-820
COL-820
COL-820
COL-820
COL-820
630
619
592
592
592
L1C
L1C
L1C
L1C
L1C
CA3080A5
CA3080H
CA30805
CA3081
CA3081 F
550-201
550-201
550-201
550201
550-201
30
590
30
126
126
COL-820
COL-820
COL-820
COL-820
COL-820
475
516
475
480
480
L1C
L1C
L1C
L1C
L1C
CA6741T
C02150
C02151
C02152
C02153
550-201
550-201
550-201
550-201
550-201
69
409
409
409
409
COL-820
COL-820
COL-820
COL-820
COL-820
592
308
308
308
308
L1C
L1C
L1C
L1C
L1C
CA3081 H
CA3082
CA3082F
CA3082H
CA3083
550-201
550-201
550-201
550-201
550-201
590
126
126
590
130
COL-820
COL-820
COL-820
COL-820
COL-820
516
480
480
516
481
L1C
L1C
L1C
L1C
L1C
C02154
C02500E
C02501 E
C02502E
C02503E
550201
550-201
550-201
550-201
550-201
421
403
403
403
403
COL-820
COL-820
COL-820
COL-820
COL-820
402
392
392
392
392
L1C
L1C
L1C
L1C
L1C
CA3083F
CA3083H
CA3083L
CA3084
CA3084H
550-201
550-201
550-201
550-201
550-201
130
590
605
134
590
COL820
COL-820
COL-820
COL-820
COL-820
481
516
515
482
516
L1C
L1C
L1C
L1C
L1C
C04000A/1-4
C04000AO
C04000AE
C04000AF
C04000AH
550-207
550-203
550-203
550-203
550-203
309
30
30
30
307
C05-278
C05-278
C05278
Ca5-278
687
479
479
479
517
C05/M05
C05/MOS
Ca5/Ma5
Ca5/Ma5
ca5/Ma5
CA3054H
CA3054L
CA3058
CA3058/1-4
CA3059
550-201
550-201
550-201
550-207
550-201
590
605
338
269
338
COL-820
COL-820
COL-820
CA3059H
CA3060AO
CA3060BO
CA30600
CA3060E
550-201
550201
550-201
550-201
550-201
590
38
38
38
38
CA3060H
CA3062
CA3064
CA3064E
CA3065
550-201
550-201
550-201
550-201
550-201
CA3066
CA3067
CA3068
CA3070
CA3071
COL-820
531
Index to Devices
Type No.
DATA
BOOK
Vol.No.
Page
Catalog
CD4000AK
CD4001 A/1-4
CD4001AD
CD4001AE
CD4001AF
SSD-203
SSD207
SSD-203
SSD-203
SSD-203
30
309
30
30
30
COS-278
CD4001AH
CD4001AK
CD4002A/1-4
CD4002AD
CD4002AE
SSD-203
SSD-203
SSD-207
SSD-203
SSD-203
307
30
309
30
30
COS-278
COS-278
COS-278
COS-278
COS-278
COS-278
COS-278
Type No.
DATA
BOOK
Vol. No.
Page
Catalog
COS/MOS
COS/MOS
COS/MOS
COS/MOS
COS/MOS
CD4017AE
CD4017AF
CD4017AH
CD4017AK
CD4018A11-4
SSD203
SSD-203
SSD-203
SSD-203
SSD-207
90
90
307
90
375
517
479
687
479
479
COS/MOS
COS/MOS
COS/MOS
COS/MOS
COS/MOS
CD4018AD
CD4018AE
CD4018AF
CD4018AH
CD4018AK
SSD-203
SSD-203
SSD-203
SSD-203
SSD-203
479
517
479
COS/MOS
COS/MOS
COS/MOS
File
No.
Product
Line
479
687
479
479
479
File
No.
Product
Line
COS278
COS-278
COS-278
COS-278
479
479
517
479
742
COS/MOS
COS/MOS
COS/MOS
COS/MOS
COS/MOS
95
95
95
307
95
COS-278
COS-278
COS-278
COS-278
COS-278
479
479
479
517
479
COS/MOS
COS/MOS
COS/MOS
COS/MOS
COS/MOS
SSD-207
SSD-203
SSD-203
SSD-203
SSD-203
380
100
100
100
307
COS-278
COS-278
COS-278
COS-278
743
479
479
479
517
COS/MOS
COS/MOS
COS/MOS
COS/MOS
COS/MOS
479
750
479
479
479
COS/MOS
COS/MOS
COS/MOS
COS/MOS
COS/MOS
517
479
730
479
479
COS/MOS
COS/MOS
COS/MOS
COS/MOS
COS/MOS
479
517
479
731
479
COS/MOS
COS/MOS
COS/MOS
COS/MOS
COS/MOS
689
COS/MOS
CD4019A/1-4
CD4019AD
CD4019AE
CD4019AF
CD4019AH
CD4006AD
CD4006AE
CD4006AF
CD4006AH
CD4006AK
SSD-203
SSD-203
SSD-203
SSD-203
SSD-203
37
37
37
307
37
COS-278
COS-278
COS-278
COS-278
COS-278
479
479
479
517
479
COS/MOS
COS/MOS
COS/MOS
COS/MOS
COS/MOS
CD4019AK
CD4020A/1-4
CD4020AD
CD4020AE
CD4020AF
SSD-203
SSD-207
SSD-203
SSD-203
SSD-203
100
384
105
105
105
COS-278
CD4007A/1-4
CD4007AD
CD4007AE
CD4007AF
CD4007AH
SSD-207
SSD-203
SSD-203
SSD-203
SSD-203
321
43
43
43
307
COS-278
COS-278
COS-278
COS-278
695
479
479
479
517
COS/MOS
COS/MOS
COS/MOS
COS/MOS
COS/MOS
CD4020AH
CD4020AK
CD4021A/1-4
CD4021AD
CD4021AE
SSD-203
SSD-203
SSD-207
SSD-203
SSD-203
307
105
389
110
110
COS-278
COS-278
479
696
479
479
479
COS/MOS
COS/MOS
COS/MOS
COS/MOS
COS/MOS
CD4021AF
CD4021AH
CD4021AK
CD4022A/1-4
CD4022AD
SSD-203
SSD-203
SSD-203
SSD-207
SSD-203
110
307
110
394
115
COS-278
COS-278
COS-278
517
479
719
479
479
COS/MOS
COS/MOS
COS/MOS
COS/MOS
COS/MOS
CD4022AE
CD4022AF
CD4022AH
CD4022AK
CD4023A/1-4
SSD-203
SSD-203
SSD-203
SSD-203
SSD-207
115
115
307
115
339
COS-278
COS-278
COS-278
COS-278
479
479
517
479
717
COS/MOS
COS/MOS
COS/MOS
COS/MOS
COS/MOS
517
479
719
479
479
COS/MOS
COS/MOS
COS/MOS
COS/MOS
COS/MOS
CD4023AD
CD4023AE
CD4023AF
CD4023AH
CD4023AK
SSD-203
SSD-203
SSD-203
SSD-203
SSD-203
61
61
61
307
61
COS-278
COS-278
COS-278
COS-278
COS-278
479
479
479
517
479
COS/MOS
COS/MOS
COS/MOS
COS/MOS
COS/MOS
517
479
717
479
479
COS/MOS
COS/MOS
COS/MOS
COS/MOS
COS/MOS
CD4024A/1-4
CD4024AD
CD4024AE
CD4024AF
CD4024AH
SSD-207
SSD-203
SSD-203
SSD-203
SSD-203
399
120
120
120
307
COS-278
COS-278
COS-278
COS-278
732
503
503
503
517
COS/MOS
COS/MOS
COS/MOS
COS/MOS
COS/MOS
479
517
479
717
479
COS/MOS
COS/MOS
COS/MOS
COS/MOS
COS/MOS
CD4025A/1-4
CD4025AD
CD4025AE
CD4025AF
CD4025AH
SSD-207
SSD-203
SSD-203
SSD-203
SSD-203
309
30
30
30
307
COS-278
COS-278
COS-278
COS-278
687
479
479
479
517
COS/MOS
COS/MOS
COS/MOS
COS/MOS
COS/MOS
479
733
503
503
503
COS/MOS
COS/MOS
COS/MOS
COS/MOS
COS/MOS
517
503
734
503
503
COS/MOS
COS/MOS
COS/MOS
COS/MOS
COS/MOS
517
503
735
503
503
COS/MOS
COS/MOS
COS/MOS
COS/MOS
COS/MOS
503
517
503
736
503
COS/MOS
COS/MOS
COS/MOS
COS/MOS
COS/MOS
503
517
503
737
503
COS/MOS
COS/MOS
COS/MOS
COS/MOS
COS/MOS
503
503
517
503
738
COS/MOS
COS/MOS
COS/MOS
COS/MOS
COS/MOS
CD4002AF
CD4002AH
CD4002AK
CD4004A Series
CD4006A/1-4
COS-278
SSD-203
30
SSD-203
307
COS-278
SSD-203
30
COS-278
Replaced by CD4024A Series
SSD-207
316
COS-278
COS-278
COS-278
COS-278
COS-278
CD4007AK
CD4008A/1-4
CD4008AD
CD4008AE
CD4008AF
SSD-203
SSD-207
SSD-203
SSD-203
SSD-203
43
327
49
49
49
COS-278
CD4008AH
CD4008AK
CD4009A/1-4
CD4009AD
CD4009AE
SSD-203
SSD-203
SSD-207
SSD-203
SSD-203
307
49
332
54
54
COS-278
COS-278
CD4009AH
CD4009AK
CD4010A/1-4
CD4010AD
CD4010AE
SSD-203
SSD-203
SSD-207
SSD-203
SSD-203
307
54
332
54
54
COS-278
COS-278
CD4010AH
CD4010AK
CD4011A/1-4
CD4011AD
CD4011AE
SSD-203
SSD-203
SSD-207
SSD-203
SSD-203
307
54
339
61
61
COS-278
COS-278
CD4011AF
CD4011AH
CD4011AK
CD4012A/1-4
CD4012AD
SSD-203
SSD-203
SSD-203
SSD-207
SSD-203
61
307
61
339
61
COS-278
COS-278
COS-278
CD4012AE
CD4012AF
CD4012AH
CD4012AK
CD4013A/1-4
SSD-203
SSD-203
SSD-203
SSD-203
SSD-207
61
61
307
61
346
COS-278
COS-278
COS-278
COS-278
479
479
517
479
697
COS/MOS
COS/MOS
COS/MOS
COS/MOS
COS/MOS
CD4025AK
CD4026A/1-4
CD4026AD
CD4026AE
CD4026AF
SSD-203
SSD-207
SSD-203
SSD-203
SSD-203
30
404
126
126
126
COS-278
CD4013AD
CD4013AE
CD4013AF
CD4013AH
CD4013AK
SSD-203
SSD-203
SSD-203
SSD-203
SSD-203
68
68
68
307
68
COS-278
COS-278
COS-278
COS-278
COS-278
479
479
479
517
479
COS/MOS
COS/MOS
COS/MOS
COS/MOS
COS/MOS
CD4026AH
CD4026AK
CD4027A/1-4
CD4027AD
CD4027AE
SSD-203
SSD-203
SSD-207
SSD-203
SSD-203
307
126
411
135
135
COS-278
COS-278
CD4014A11-4
CD4014AD
CD4014AE
CD4014AF
CD4014AH
SSD-207
SSD-203
SSD-203
SSD-203
SSD-203
352
74
74
74
307
COS-278
COS-278
COS-278
COS-278
720
479
479
479
517
COS/MOS
COS/MOS
COS/MOS
COS/MOS
COS/MOS
CD4027AH
CD4027AK
CD4028A/1-4
CD4028AD
CD4028AE
SSD-203
SSD-203
SSD-207
SSD-203
SSD-203
307
135
417
141
141
COS-278
COS-278
CD4014AK
CD4015A/1-4
CD4015AD
CD4015AE
CD4015AF
SSD-203
SSD-207
SSD-203
SSD-203
SSD-203
74
357
79
79
79
COS-278
479
721
479
479
479
COS/MOS
COS/MOS
COS/MOS
COS/MOS
COS/MOS
CD4028AF
CD4028AH
CD4028AK
CD4029A/1-4
CD4029AD
SSD-203
SSD-203
SSD-203
SSD-207
SSD-203
141
307
141
421
146
r.OS-278
<:OS-278
COS-278
CD4015AH
CD4015AK
CD4016A/1-4
CD4016AD
CD4016AE
SSD-203
SSD-203
SSD-207
SSD-203
SSD-203
307
79
362
84
84
COS-278
COS-278
517
479
744
479
479
COS/MOS
COS/MOS
COS/MOS
COS/MOS
COS/MOS
CD4029AE
CD4029AH
CD4029AK
CD4030A/1-4
CD4030AD
SSD-203
SSD-203
SSD-203
SSD-207
SSD-203
146
307
146
427
153
COS-278
COS-278
COS-.'78
CD4016AF
CD4016AH
CD4016AK
CD4017A/1-4
CD4017AD
SSD-203
SSD-203
SSD-203
SSD-207
SSD-203
84
307
84
370
90
COS-278
COS-278
COS-278
479
517
479
741
479
COS/MOS
COS/MOS
COS/MOS
COS/'~OS
COS/MOS
CD4030AE
CD4030AF
CD4030AH
CD4030AK
CD4031 A/1-4
SSD-203
SSD-203
SSD-203
SSD-203
SSD-207
153
153
307
153
432
COS-278
COS-278
COS-278
COS-278
COS-278
COS-278
COS-278
COS-278
COS-278
COS-278
COS-278
COS-278
COS-278
COS-278
COS-278
COS-278
COS-278
COS-278
COS-278
COS-278
532
COS-278
COS-278
COS-278
COS-278
COS-278
COS-278
COS-278
COS-278
COS-278
COS-278
Index to Devices
Type No.
DATA
BOOK
Vol. No.
Page
Catalog
CaS/MaS
caS/Mas
caS/Mas
caS/Mas
caS/Mas
C04046AK
C04047A/1-4
C04047AO
C04047AE
C04047AH
SSO-203
SSO-207
SSO-203
SSO-203
SSO-203
226
495
233
233
307
caS-278
503
503
517
503
733
caS/Mas
caS/Mas
caS/Mas
caS/Mas
caslMas
C04047AK
C04048A/1-4
C04048AO
C04048AE
C04048AH
SSO-203
SSO-207
SSO-203
SSO-203
SSO-203
233
506
244
244
307
caS-278
caS-278
caS-278
caS-278
caS-278
caS-278
503
503
503
517
503
caS/Mas
caS/Mas
caS/Mas
caS/Mas
caS/Mas
C04048AK
C04049A/1-4
C04049AO
C04049AE
C04049AF
SSO-203
SSO-207
SSO-203
SSO-203
SSO-203
244
513
251
251
251
caS-278
442
169
169
307
169
caS-278
caS-278
caS-278
caS-278
740
575
575
517
575
caS/Mas
caS/Mas
caS/Mas
caS/Mas
caS/Mas
C04049AH
C04049AK
C04050A/1-4
C04050AO
C04050AE
SSO-203
SSO-203
SSO-207
SSO-203
SSO-203
307
251
513
251
251
caS-278
caS-278
SSO-207
SSO-203
SSO-203
SSO-203
SSO-203
449
177
177
307
177
caS-278
caS-278
caS-278
caS-278
751
568
568
517
568
caS/Mas
caS/Mas
caS/Mas
caS/Mas
caS/Mas
C04050AF
C04050AH
C04050AK
C04051AO
C04051AE
SSO-203
SSO-203
SSO-203
SSO-203
SSO-203
C04036A/1-4
C04036AO
C04036AE
C04036AH
C04036AK
SSO-207
SSO-203
SSO-203
SSO-203
SSO-203
455
184
184
307
184
CaS-278
caS-278
caS-278
CaS-278
749
613
613
517
613
caS/Mas
caS/Mas
caS/Mas
caS/Mas
caslMas
C04051AK
C04052AO
C04052AE
C04052AK
C04053AO
C04037AO
C04037AE
C04037AF
C04037AH
C04037AK
SSO-203
SSO-203
SSO-203
SSO-203
SSO-203
191
191
191
307
191
CaS-278
caS-278
CaS-278
caS-278
caS-278
576
576
576
517
576
caS/Mas
caS/Mas
caS/Mas
caS/Mas
caS/Mas
C04038A/1-4
C04038AO
C04038AE
C04038AH
C04038AK
SSO-207
SSO-203
SSO203
SSO-203
SSO-203
438
164
164
307
164
caS-278
caS-278
caS-278
caS-278
739
503
503
517
503
C04039A/1-4
C04039AO
C04039AH
C04039AK
C04040A/1-4
SSO-207
SSO-203
SSO-203
SSO-203
SSO-207
455
184
307
184
461
caS-278
caS-278
caS-278
C04040AO
C04040AE
C04040AF
C04040AH
C04040AK
SSO-203
SSO-203
SSO-203
SSO-203
SSO-203
197
197
197
307
197
C04041 A/1-4
C04041AO
C04041AE
C04041AH
C04041AK
SSO-207
SSO-203
SSO-203
SSO-203
SSO-203
C04042A/1-4
C04042AO
C04042AE
C04042AF
C04042AH
Type No.
DATA
BOOK
Vol. No.
Page
Catalog
C04031AD
C04031AE
C04031AH
C04031AK
C04032A/1-4
SSO-203
SSO-203
SSO-203
SSO-203
SSO-207
158
158
307
158
438
C04032AO
C04032AE
C04032AH
C04032AK
C04033A/1-4
SSO-203
SSO-203
SSO-203
SSO-203
SSO-207
C04033AO
C04033AE
C04033AF
C04033AH
C04033AK
File
No.
Product
Line
637
745
623
623
517
caS/Mas
COSIMOS
caS/Mas
caS/Mas
caS/Mas
623
747
636
636
517
cOS/Mas
cOS/Mas
caS/Mas
caS/Mas
caslMas
636
746
599
599
599
caS/Mas
caS/Mas
caS/Mas
caS/Mas
caS/Mas
caS-278
caS-278
517
599
746
599
599
caS/Mas
caS/Mas
caS/Mas
caS/Mas
caS/Mas
251
307
251
258
258
caS-278
caS278
caS-278
CaS-278
CaS-278
599
517
599
Pre!.
Pre!.
caS/Mas
caS/Mas
caS/Mas
CaS/MaS
CaS/MaS
SSO-203
SSO-203
SSO-203
SSO-203
SSO-203
258
258
258
258
258
caS-278
CaS-278
CaS278
caS-278
caS-278
Prel.
caS/Mas
CaS/MaS
CaS/MaS
caS/Mas
caS/Mas
C04053AE
C04053AK
C04054AO
C04054AE
C04054AH
SSO-203
SSO-203
SSO203
SSO-203
SSO-203
258
258
266
266
307
CaS-278
caS-278
caS-278
caS-278
caS-278
Pre!.
Prel.
Prel.
Pre!.
Prel.
634
634
517
caS/Mas
caS/Mas
caS/Mas
caS/Mas
caS/Mas
C04054AK
C04055AO
C04055AE
C04055AK
C04056AO
SSO-203
SSO-203
SSO203
SSO203
SSO-203
266
266
266
266
266
caS-278
caS-278
caS-278
caS-278
caS-278
634
634
634
634
634
caS/Mas
caS/Mas
caS/Mas
caS/Mas
caS/Mas
749
613
517
613
748
caS/Mas
caslMas
caS/Mas
caS/Mas
caS/Mas
C04056AE
C04056AH
C04056AK
C04057AO
C04057AH
SSO-203
SSO-203
SSO-203
SSO-203
SSO-203
266
307
266
272
307
caS-278
caS-278
caS-278
caS-278
caS-278
caS/Mas
caS/Mas
caS/Mas
caS/Mas
caS/Mas
caS278
caS-278
CaS-278
CaS-278
CaS-278
624
624
624
517
624
caS/Mas
caS/Mas
caS/Mas
caS/Mas
caS/Mas
C04059A
C04061A
C04062A
C04066A
CH2102
SSO-203
SSO-203
SSO-203
SSO-203
SSO-204
285
291
295
303
737
CaS-278
caS-278
caS-278
caS-278
SPG-201
634
517
634
635
517
Pre!.
Prel.
PreL
Prel.
632
469
203
203
307
203
caS-278
caS-278
caS-278
caS-278
753
572
572
517
572
caS/Mas
caS/Mas
caS/Mas
caS/Mas
caS/Mas
CH2270
CH2405
CH3053
CH3439
CH3440
SSO-204
SSO-204
SSO-204
SSO-204
SSO-204
737
737
737
737
737
SPG-201
SPG-201
SPG-201
SPG-201
SPG-201
632
632
632
632
632
PWR
PWR
PWR
PWR
PWR
SSO-207
SSO-203
SSO-203
SSO-203
SSO-203
473
210
210
210
307
caS-278
caS-278
caS-278
caS-278
756
589
589
589
517
caS/Mas
caS/Mas
caS/Mas
caS/Mas
caS/Mas
CH4036
CH4037
CH5320
CH5321
CH5322
SSO-204
SSO-204
SSO-204
SSO-204
SSO-204
737
737
737
737
737
SPG-201
SPG-201
SPG-201
SPG-201
SPG-201
632
632
632
632
632
PWR
PWR
PWR
PWR
PWR
C04042AK
C04043A/1-4
C04043AO
C04043AE
C04043AH
SSO-203
SSO-207
SSO-203
SSO-203
SSO-203
210
477
214
214
307
caS-278
589
754
590
590
517
caS/Mas
caS/Mas
caS/Mas
caS/Mas
caS/Mas
CH5323
CH5262
CH6479
01201A
012018
SSO-204
SSO-204
SSO-204
SSO-206
SSO-206
737
737
737
278
278
SPG-201
SPG-201
SPG-201
THC-500
THC-500
632
632
632
495
495
PWR
PWR
PWR
RECT
RECT
C04043AK
C04044A/1-4
C04044AO
C04044AE
C04044AH
SSO-203
SSO-207
SSO-203
SSO-203
SSO-203
214
477
214
214
307
caS-278
590
754
590
590
517
caslMas
caS/Mas
caS/Mas
caS/Mas
caS/Mas
012010
01201F
01201M
01201N
01201P
SSO-206
SSO-206
SSO-206
SSO-206
SSO-206
278
278
278
278
278
THC-500
THC-500
THC-500
THC-500
THC-500
495
495
495
495
495
RECT
RECT
RECT
RECT
RECT
C04044AK
C04045A/1-4
C04045AO
C04045AE
C04045AH
SSO-203
SSO-207
SSO-203
SSO-203
SSO-203
214
482
220
220
307
caS-278
590
755
614
614
517
caS/Mas
caS/Mas
caS/Mas
caS/Mas
caS/Mas
02101S
02103S
02103SF
02201A
022018
SSO-206
SSO-206
SSO-206
SSO-206
SSO-206
298
298
298
313
313
THC-500
THC-500
THC-500
THC-500
THC-500
522
522
522
629
629
RECT
RECT
RECT
RECT
RECT
C04045AK
C04046A /1-4
C04046AO
C04046AE
C04046AH
SSO-203
SSO-207
SSO-203
SSO-203
SSO203
220
487
226
226
307
614
752
637
637
517
caS/Mas
caslMas
caS/Mas
caslMas
caS/Mas
022010
02201F
02201M
02201N
02406A
SSO-206
SSO-206
SSO-206
SSO-206
SSO-206
313
313
313
313
318
THC-500
THC-500
THC-500
THC-500
THC-500
629
629
629
629
663
RECT
RECT
RECT
RECT
RECT
File
No.
Product
Line
COS-278
caS-278
caS-278
caS-278
569
569
517
569
739
164
164
307
164
404
caS-278
caS-278
COS-278
caS-278
SSO-203
SSO-203
SSO-203
SSO-203
SSO-203
126
126
126
307
126
C04034A/1-4
C04034AO
C04034AE
C04034AH
C04034AK
SSO-207
SSO-203
SSO-203
SSO-203
SSO-203
C04035A/1-4
C04035AO
C04035AE
C04035AH
C04035AK
caS-278
caS-278
caS-278
caS-278
caS-278
caS-278
caS-278
caS-278
caS-278
caS-278
caS-278
caS-278
caS-278
533
caS-278
caS-278
caS-278
caS-278
caS-278
caS-278
caS-278
caS-278
caS-278
Pre!.
CaS/MaS
caS/Mas
caS/Mas
caS/Mas
caS/Mas
CaS/MaS
caS/Mas
caS/Mas
caS/Mas
PWR
02406F
02406M
550206
550-206
318
318
THC500
THC-500
663
663
RECT
RECT
JAN2N5918
JAN2N6213
550207
550-207
82
33
rvvn
RF
PWR
02412A
02412B
02412C
024120
02412F
550-206
550-206
550-206
550-206
550-206
326
326
326
326
326
THC-500
THC-500
THC-500
THC-500
THC500
664
664
664
664
664
RECT
RECT
RECT
RECT
RECT
JANTX2N 1486
JANTX2N2857
JANTX2N3055
JANTX2N3375
JANTX2N3439
550-207
550-207
550207
550-207
550207
26
79
28
80
28
PWR
RF
PWR
RF
PWR
02412M
02520A
02520B
02520C
025200
550-206
550206
550206
550-206
550-206
326
334
334
334
334
THC-500
THC500
THC500
THC-500
THC-500
664
665
665
665
665
RECT
RECT
RECT
RECT
RECT
JANTX2N3441
JANTX2N3553
JANTX2N3585
JANTX2N4440
JANTX2N5038
550-207
550207
550207
550207
550207
29
80
30
80
31
PWR
RF
PWR
RF
PWR
02520F
02520M
02540A
02540B
025400
550206
550-206
550-206
550-206
550-206
334
334
345
345
345
THC-500
THC-500
THC-500
THC500
THC-500
665
665
580
580
580
RECT
RECT
RECT
RECT
RECT
JANTX2N5071
JANTX2N5109
JANTX2N5416
JANTX2N5672
JANTX2N5840
550207
550-207
550-207
550-207
550-207
81
82
31
32
32
RF
RF
PWR
PWR
PWR
02540F
02540M
02601A
02601B
026010
550206
550206
550-206
550206
550-206
345
345
308
308
308
THC-500
THC-500
THC-500
THC-500
THC-500
580
580
723
723
723
RECT
RECT
RECT
RECT
RECT
JANTX2N6213
JANTXV2N3375
JANTXV2N3553
JANTXV2N4440
R47Ml0
550207
550-207
550-207
550207
550-205
33
80
80
80
407
RFT700
605
PWR
RF
RF
RF
RF
02601 F
02601M
02601N
02600EF
026010F
550-206
550-206
550-206
550-206
550206
308
308
308
303
303
THC-500
THC-500
THC-500
THC-500
THC-500
723
723
723
354
354
RECT
RECT
RECT
RECT
RECT
R47M13
R47M15
RCA1AOl
RCA1A02
RCA1A03
550-205
550-205
550-204
550204
550-204
407
407
636
636
636
RFT700
RFT700
PTO187
PTO-187
PTO-187
605
605
651
651
651
RF
RF
PWR
PWR
PWR
02601EF
03202Y
03202U
HC2000H
HC2500
550-206
550206
550206
550-204
550-204
303
350
350
744
749
THC-500
THC-500
THC.500
354
577
577
566
681
RECT
OIAC
OIAC
HYB
HYB
RCA1A04
RCA1A05
RCA1A06
RCA1A07
RCA1A08
550204
550-204
550-204
550-204
550-204
636
636
636
636
636
PTO187
PTO187
PTO187
PTO187
PTO-187
651
651
651
651
651
PWR
PWR
PWR
PWR
PWR
HR2N2857
HR2N3866
HR2N5090
HR2N5470
HR2N5916
550-207
550207
550207
550-207
550-207
83
85
87
89
91
RF
RF
RF
RF
RF
RCA1A09
RCA1Al0
RCA1Al1
RCA1A15
RCA1A16
550-204
550-204
550204
550-204
550204
636
636
636
636
636
PTO187
PTO-187
PTO-187
PTO187
PTO-187
651
651
651
651
651
PWR
PWR
PWR
PWR
PWR
HR2N5918
HR2N5919A
HR2N5920
HR2N5921
HR2N6105
550-207
550-207
550-207
550-207
550-207
93
95
97
99
101
RF
RF
RF
RF
RF
RCA1A17
RCA1A18
RCA1A19
RCA1BOl
RCA1B04
550-204
550204
550204
550-204
550-204
636
636
636
600
618
PTO187
PTO-187
PTO-187
PTO-187
PTO-187
651
651
651
647
649
PWR
PWR
PWR
PWR
PWR
HR2N6265
HR2N6266
HR2N6267
HR2N6268
HR2N6269
550-207
550-207
550-207
550-207
550-207
103
105
107
109
109
RF
RF
RF
RF
RF
RCA1B05
RCA1B06
RCA1C03
RCA1C04
RCA1C05
550204
550204
550-204
550-204
550-204
627
609
347
647
575
PTO-187
PTO187
PTO-187
PTO-187
PTO-187
650
648
652
652
644
PWR
PWR
PWR
PWR
PWR
HR2N6390
HR2N6391
HR2N6392
HR2N6393
HR2003
550-207
550-207
550-207
550-207
550207
111
113
115
115
111
RF
RF
RF
RF
RF
RCA1C06
RCA1C07
RCA1C08
RCA1C09
RCA1Cl0
550-204
550-204
550-204
550-204
550-204
575
592
592
583
558
PTO187
PTO187
PTO187
PTO187
PTO-187
644
646
646
645
642
PWR
PWR
PWR
PWR
PWR
HR2005
HR2010
HR3001
HR3003
HR3005
550-207
550-207
550-207
550-207
550-207
113
115
117
117
117
RF
RF
RF
RF
RF
RCA1Cll
RCA1C12
RCA1C13
RCA1C14
RCA1E02
550204
550-204
550-204
550-204
550-204
558
647
647
566
651
PTO187
PTO187
PTO187
PTO187
PTO187
642
652
652
643
653
PWR
PWR
PWR
PWR
PWR
JAN2N918
JAN2N1482
JAN2N1486
JAN2N1490
JAN2N1493
550-207
550-207
550-207
550-207
550-207
78
26
26
27
78
RF
PWR
PWR
PWR
RF
RCA1E03
RCA29
RCA29A
RCA29B
RCA29C
550-204
550-204
550204
550204
550-204
651
232
232
232
232
PTO-187
PTO-187
PTO-187
PTO187
PTO-187
653
583
583
583
583
PWR
PWR
PWR
PWR
PWR
JAN2N2016
JAN2N2857
JAN2N3055
JAN2N3375
JAN2N3439
550-207
550-207
550-207
550-207
550207
27
79
28
80
28
PWR
RF
PWR
RF
PWR
RCA30
RCA30A
RCA30B
RCA30C
RCA31
550204
550204
550-204
550-204
550-204
237
237
237
237
242
PTO-187
PTO-187
PTO187
PTO187
PTO-187
584
584
584
584
585
PWR
PWR
PWR
PWR
PWR
JAN2N3441
JAN2N3442
JAN2N3553
JAN2N3585
JAN2N3772
550-207
550-207
550207
550207
550-207
29
29
80
30
30
PWR
PWR
RF
PWR
PWR
RCA31A
RCA31B
RCA31C
RCA32
RCA32A
550-204
550-204
550-204
550-204
550-204
242
242
242
247
247
PTO-187
PTO-187
PTO187
PTO187
PTO-187
585
585
585
586
586
PWR
PWR
PWR
PWR
PWR
JAN2N3866
JAN2N4440
JAN2N5038
JAN2N5071
JAN2N5109
550-207
550207
550207
550-207
550-207
81
80
31
81
82
RF
RF
PWR
RF
RF
RCA32B
RCA32C
RCA41
RCA41A
RCA41B
550-204
550-204
550-204
550204
550204
247
247
252
252
252
PTO187
PTO187
PTO-187
PTO-187
PTO-187
586
586
587
587
587
PWR
PWR
PWR
PWR
PWR
"",....,
""."
534
..
uu
Index to Devices
Type No.
DATA
BOOK
Vol. No.
Page
Catalog
File
No.
PWR
PWR
PWR
PWR
PWR
528008
528000
537008
537000
53700M
550-206
550-206
550-206
550-206
550-206
166
166
172
172
172
THC-5oo
THC-5oo
THC-500
THC-500
THC-500
501
501
306
306
306
5CR
5CR
5CR
5CR
5CR
RCA41C
RCA42
RCA42A
RCA428
RCA42C
DATA
BOOK
Vol.No.
550-204
550-204
550-204
550-204
550-204
RCA10l
RCA102
RCA103
RCA104
RCA105
550-204
550-204
550-204
550-204
550-204
262
262
262
262
266
PTO-187
PTO-187
PTO-;87
PTO-187
PTO-187
557
557
557
557
556
PWR
PWR
PWR
PWR
PWR
53701M
537025F
537035F
53704A
537048
550-206
550-206
550-206
550-206
550-206
192
194
194
180
180
THC-500
THC-5oo
THC-500
THC-500
THC-5oo
476
522
522
690
690
5CR
5CR
5CR
5CR
5CR
RCA201
RCA202
RCA203
RCA204
RCA205
550-204
550-204
550-204
550-204
550-204
262
262
262
262
266
PTO-187
PTO-187
PTO-187
PTO-187
PTO-187
557
557
557
557
556
PWR
PWR
PWR
PWR
PWR
537040
53704J'y1
537045
53705M
53706M
550-206
550-206
550-206
550-206
550-206
180
180
180
187
187
THC-5oo
THC-5oo
THC-500
THC-5oo
THC-500
690
690
690
354
354
5CR
5CR
5CR
5CR
5CR
RCA370
RCA371
RCA410
RCA411
RCA413
550-204
550-204
550-204
550-204
550-204
270
270
326
332
338
PTO-187
PTO-187
PTO-187
PTO-187
PTO-187
558
558
509
510
511
PWR
PWR
PWR
PWR
PWR
53714A
537148
537140
53714M
537145
550-206
550-206
550-206
550-206
550-206
180
180
180
180
180
THC-500
THC-500
THC-5oo
THC-500
THC-500
690
690
690
690
690
5CR
5CR
5CR
5CR
5CR
RCA423
RCA431
RCA520
RCA521
RCA1000
550-204
550-204
550-204
550-204
550-204
344
350
270
270
524
PTO-187
PTO-187
PTO-187
PTO-187
PTO-187
512
513
558
558
594
PWR
PWR
PWR
PWR
PWR
538000
53800E
53800EF
53800M
53800MF
550-206
550-206
550-206
550-206
550206
199
199
199
199
199
THC-500
THC-5oo
THC-5oo
THC-5oo
THC-500
639
639
639
639
639
ITR
ITR
ITR
ITR
ITR
RCA100l
RCA2003
RCA2005
RCA2010
RCA3001
550-204
550-205
550-205
550-205
550-205
524
261
265
270
401
PTO-187
RFT-700
RFT-700
RFT-700
RFT-700
594
626
627
628
657
PWR
RF
RF
RF
RF
538005
538005F
56200A
562008
562000
550-206
550-206
550-206
550-206
550-206
199
199
210
210
210
THC-5oo
THC-5oo
THC-500
THC-500
THC-500
639
639
418
418
418
ITR
ITR
5CR
5CR
5CR
RCA3003
RCA3005
RCA3054
RCA3055
RCA3441
550-205
550-205
550-204
550-204
550-204
401
401
53
53
77
RFT-700
RFT-700
PTO-187
PTO-187
PTO-187
657
657
618
618
666
RF
RF
PWR
PWR
PWR
56200M
56210A
56210B
562100
56210M
550-206
550-206
550-206
550-206
550-206
210
210
210
210
210
THC-500
THC-500
THC-500
THC-500
THC-5oo
418
418
418
418
418
5CR
5CR
5CR
5CR
5CR
RCA6263
52060A
520608
52060C
520600
550-204
550-206
550-206
550-206
550-206
77
138
138
138
138
PTO-187
THC-500
THC-500
THC-500
THC-500
666
654
654
654
654
PWR
5CR
5CR
5CR
5CR
56220A
562208
562200
56220M
56400N
550-206
550-206
550-206
550-206
550-206
210
210
210
210
218
THC-500
THC-5oo
THC-500
THC-500
THC-500
418
418
418
418
578
5CR
5CR
5CR
5CR
5CR
52060E
52060F
52060M
520600
52060Y
550-206
550-206
550-206
550-206
550-206
138
138
138
138
138
THC-500
THC-500
THC-500
THC-500
THC-500
654
654
654
654
654
5CR
5CR
5CR
5CR
5CR
5641 ON
56420A
564208
564200
56420M
550-206
550-206
550-206
550-206
550-206
218
218
218
218
218
THC-500
THC-500
THC-500
THC-500
THC-500
578
578
578
578
578
5CR
5CR
5CR
5CR
5CR
52061A
520618
52061C
520810
52061E
550-206
550-206
550-206
550-206
550-206
138
138
138
138
138
THC-500
THC-500
THC-500
THC-500
THC-500
654
654
654
654
654
5CR
5CR
5CR
5CR
5CR
56420N
56431M
57430M
57432M
T2300A
550-206
550-206
550-206
550-206
550-206
218
228
238
245
33
THC-500
THC-500
THC-500
THC-5oo
THC-5oo
578
247
408
724
470
5CR
5CR
5CR
5CR
TRI
52061 F
52061M
520610
52061Y
52062A
550-206
550-206
550-206
550-206
550-206
138
138
138
138
138
THC-500
THC-5oo
THC-500
THC-500
THC-500
654
654
654
654
654
5CR
5CR
5CR
5CR
5CR
T23008
T23000
T2301A
T23018
T23010
550-206
550-206
550-206
550-206
550-206
33
33
40
40
40
THC-5oo
THC-500
THC-500
THC-500
THC-500
470
470
431
431
431
TRI
TRI
TRI
TRI
TRI
520628
52062C
520620
52062E
52062F
550-206
550-206
550-206
550-206
550-206
138
138
138
138
138
THC-500
THC-500
THC-500
THC-500
THC-500
654
654
654
654
654
5CR
5CR
5CR
5CR
5CR
T2302A
T23028
T23020
T2304B
T23040
550-206
550-206
550-206
550-206
550-206
33
33
33
41
41
THC-500
THC-500
THC-500
THC-5oo
THC-5oo
470
470
470
441
441
TRI
TRI
TRI
TRI
TRI
52062M
520620
52062Y
52400A
524008
550-206
550-206
550-206
550-206
550-206
138
138
138
151
151
THC-500
THC-500
THC-500
THC-5oo
THC-500
654
654
654
567
567
5CR
5CR
5CR
5CR
5CR
T23058
T23050
T2306A
T23068
T23060
550-206
550-206
550-206
550-206
550-206
41
41
47
47
47
THC-5oo
THC-5oo
THC-500
THC-5oo
THC-500
441
441
406
406
406
TRI
TRI
TRI
TRI
TRI
524000
52400M
526008
526000
52600M
550-206
550-206
550-206
550-206
550-206
151
151
156
156
156
THC-500
THC-500
THC-500
THC-500
THC-500
567
567
496
496
496
5CR
5CR
5CR
5CR
5CR
T2310A
T23108
T23100
T2311A
T23118
550-206
550-206
550-206
550-206
550-206
33
33
33
40
40
THC-500
THC-500
THC-500
THC-500
THC-5oo
470
470
470
431
431
TRI
TRI
TRI
TRI
TRI
526108
526100
52610M
526208
526200
550-206
550-206
550-206
550-206
550-206
156
156
156
156
156
THC-500
THC-5oo
THC-500
THC-500
THC-500
496
496
496
496
496
5CR
5CR
5CR
5CR
5CR
T23110
T2312A
T23128
T23120
T2313A
550-206
550-206
550-206
550-206
550-206
40
33
33
33
28
THC-500
THC-500
THC-500
THC-5oo
THC-500
431
470
470
470
414
TRI
TRI
TRI
TRI
TRI
52620M
527108
527100
52710M
52800A
550-206
550-206
550-206
550-206
550-206
156
164
164
164
166
THC-5oo
THC-500
THC-500
THC-500
THC-500
496
266
266
266
501
5CR
5CR
5CR
5CR
5CR
T23138
T23130
T2313M
T2316A
T23168
550-206
550-206
550-206
550-206
550-206
28
28
28
47
47
THC-5oo
THC-500
THC-5oo
THC-500
THC-500
414
414
414
406
406
TRI
TRI
TRI
TRI
TRI
Type No.
Page
Catalog
File
No.
252
257
257
257
257
PTO-187
PTO-187
PTO-187
PTO-187
PTO-187
587
588
588
588
588
Product
Une
Product
Line
Index to Devices
DATA
Type No.
BOOK
Page
Catalog
Vol. No.
File
No.
Product
line
DATA
Type No.
BOOK
Page
Catalog
File
No.
Vol. No.
Product
Line
T23160
T2500B
T25000
T2700B
T27000
550-206
550-206
550~06
550-206
550206
47
49
49
62
62
THC500
THC500
THC-500
THC500
THC-500
406
615
615
351
351
TRI
TRI
TRI
TRI
TRI
T6401M
T6404B
T64040
T6405B
T64050
550206
550-206
550-206
550206
550206
107
114
114
114
114
THC-500
THC-500
THC500
THC500
THC-500
459
487
487
487
487
TRI
TRI
TRI
TRI
TRI
T2706B
T27060
T2710B
T27100
T2716B
550-206
550-206
550-206
550-206
550206
47
47
62
62
47
THC500
THC500
THC500
THC-500
THC-500
406
406
351
351
406
TRI
TRI
TRI
TRI
TRI
T6406B
T64060
T6406M
T6407B
T64070
550206
550-206
550-206
550206
550-206
47
47
47
47
47
THC-500
THC-500
THC-500
THC500
THC-500
406
406
406
406
406
TRI
TRI
TRI
TRI
TRI
T27160
T2800B
T28000
T2800M
T28010F
550206
550-206
550-206
550-206
550-206
47
69
69
69
75
THC500
THC500
THC500
THC500
THC-500
406
364
364
364
493
TRI
TRI
TRI
TRI
TRI
T6407M
T641 ON
T6411B
T64110
T6411M
550206
550-206
550206
550206
550-206
47
55
107
107
107
THC-500
THC500
THC500
THC-500
THC-500
406
593
459
459
459
TRI
TRI
TRI
TRI
TRI
T2806B
T28060
T2850A
T2850B
T28500
550-206
550-206
550-206
550206
550206
47
47
79
79
79
THC500
THC500
THC-500
THC500
THC500
406
406
540
540
540
TRI
TRI
TRI
TRI
TRI
T6414B
T64140
T6415B
T64150
T6416B
550206
550206
550-206
550206
550-206
114
114
114
114
47
THC500
THC500
THC-500
THC500
THC-500
487
487
487
487
406
TRI
TRI
TRI
TRI
TRI
T4100M
T4101M
T4103B
T41030
T4104B
550-206
550206
550206
550-206
550-206
85
92
99
99
99
THC-500
THC500
THC500
THC-500
THC-500
458
457
443
443
443
TRI
TRI
TRI
TRI
TRI
T64160
T6416M
T6417B
T64170
T6417M
550206
550206
550-206
550206
550206
47
47
47
47
47
THC-500
THC-500
THC500
THC500
THC-500
406
406
406
406
406
TRI
TRI
TRI
TRI
TRI
T41040
T4105B
T41050
T4106B
T41060
550206
550-206
550-206
550206
550206
99
99
99
47
47
THC500
THC-500
THC-500
THC500
THC500
443
443
443
406
406
TRI
TRI
TRI
TRI
TRI
T6420B
T64200
T6420M
T6420N
T6421 B
550206
550-206
550206
550206
550-206
55
55
55
55
107
THC500
THC206
THC500
THC500
THC-500
593
593
593
593
459
TRI
TRI
TRI
TRI
TRI
T4107B
T41070
T4110M
T4111M
T41138
550-206
550-206
550-206
550-206
550206
47
47
85
92
99
THC-500
THC-500
THC-5Oo
THC-5Oo
THC-50o
406
406
458
457
443
TRI
TRI
TRI
TRI
TRI
T6421 0
T6421M
T8401B
T84010
T8401M
550-206
550-206
550206
550206
550-206
107
107
122
122
122
THC-500
THC500
THC5Oo
THC-5Oo
THC-5Oo
459
459
725
725
725
TRI
TRI
TRI
TRI
TRI
T41130
T4114B
T41140
T4115B
T41150
550-206
550-206
550-206
550-206
550-206
99
99
99
99
99
THC-500
THC-50o
THC-5Oo
THC-500
THC-500
443
443
443
443
443
TRI
TRI
TRI
TRI
TRI
T8411B
T8411D
T8411M
T8421B
T8421 0
550206
550-206
550-206
550-206
550206
122
122
122
122
122
THC-500
THC-500
THC-500
THC500
THC500
725
725
725
725
725
TRI
TRI
TRI
TRI
TRI
T4116B
T41160
T4117B
T41170
T4120B
550-206
550206
550206
550-206
550206
47
47
47
47
85
THC-500
THC500
THC500
THC500
THC5Oo
406
406
406
406
458
TRI
TRI
TRI
TRI
TRI
T8421M
T84308
T84300
T8430M
T8440B
550206
550-206
550206
550206
550-206
122
130
130
130
130
THC-500
THC500
THC500
THC-500
THC-5Oo
725
549
549
549
549
TRI
TRI
TRI
TRI
TRI
T41200
T4120M
T4121B
T41210
T4121M
550-206
550-206
550-206
550-206
550206
85
85
92
92
92
THC500
THC-5Oo
THC-5Oo
THC-5Oo
THC5Oo
458
458
457
457
457
TRI
TRI
TRI
TRI
TRI
T84400
T8440M
T8450B
T84500
T8450M
550206
550206
550206
550-206
550206
130
130
130
130
130
THC-5Oo
THC-5Oo
THC-500
THC5Oo
THC5Oo
549
549
549
549
549
TRI
TRI
TRI
TRI
TRI
T4706B
T47060
T6400N
T6401B
T64010
550206
550-206
550-206
550-206
550-206
47
47
55
107
107
THC-5Oo
THC-5Oo
THC-5Oo
THC-500
THC-5Oo
406
406
593
459
459
TRI
TRI
TRI
TRI
TRI

The 1974 RCA Triac SCR and Diacs Data Book

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Thyristors, Rectifiers

A New Approach To Data Service ...

Seven textbooksize volumes covering all current commercial

Linear Integrated Circuits and MOS Devices

COS/MOS Digital Integrated Circuits

Power Transistors and Power Hybrid Circuits.

Thyristors, Rectifiers, and Diacs

Announcement Newsletter: "What's New in Solid State" Available

Thyristors, Rectifiers,and Diacs

A feature of this DATABOOK is the complete Guide to RCA

Trade Mark(s) Registered@

1973 by RCA Corporation

RCA Solid State IBox 3200 ISomerville, N. J., U.S.A. OB876

ReA Solid State

Order Form for "What's New in Solid State"

o Pleasesend me details on obtaining

update mailings for my DATABOOKS

Rectifiers, and Diacs

Cross-Reference of Old to New Type Numbers

Triac Product Matrix

SCR Product Matrix

Rectifier Product Matrix

Guide to RCA Solid State Devices:

and diacs previously

and diacs consist of an alpha-numeric

identifies the basic type of device and provides information

type is indicated by the initial

letter of the type-number

device features. The basic product

designation; i.e., T = triac, S = SCR, and 0 = rectifier

The suffix letter(s) define the voltage rating of the device.

numbers are included

Graphic Representation of Thyristor

Graphic Representation of Rectifier and

(NOTE: The first five digits, e.g., T2300, provide the

Thyristor Numbering Matrix

T23 : 2.5A sensitive-gate types

Thyristor Numbering Matrix

S20 : 4-A plastic types

S22 : 2-A types

S24 : 4_5-A types

S26 : 7-A types

IGT = 40 mA; VGT = 4 V

S40 : 12_5-A types

S62 . 1O-A and 20-A types

S64 : 16-A, 25-A, and 35-A types

S74 : 35-A fast-turn-off

Index to Thyristors, Rectifiers and Diacs

Applies to RCA 100,40000,41000,43000,44000,

and 45000 Series ~umbers.

Index to Thyristors, Rectifiers and Diacs (cont'd)

and 45000, Series numbers.

(Old numbers to NEW numbers)

Type of Current Voltage

Cross-Reference Guide [cont'd]

(Old numbers to NEW numbers)

"Operating Considerations for RCA Solid-State Devices"

"Design Considerations for the RCA-S6431M Silicon Controlled

"Application of RCA Silicon Controlled