Space Charge Near Microbes During Pulsed Electric Field Pasteurization Liquid Foods
Space Charge Near Microbes During Pulsed Electric Field Pasteurization Liquid Foods
Space Charge Near Microbes During Pulsed Electric Field Pasteurization Liquid Foods
Space Charge Near Microbes During Pulsed Electric Field Pasteurization of Liquid
Foods
R. E. Bruhn , P. D. Pedrow, and R. G. Olsen
G. V. Barbosa-Canovas
B. G. Swanson
Department of Food Science and Human Nutrition
Abstract: Inactivation of microbes by the application of pulsed
electric fields could result in low temperature pasteurization of
liquid foods. Advantages over conventional heat pasteurization
include longer shelf life, better flavor, and less enzyme damage.
In this work, fields as high as 40kVkm have been applied to
milk, apple juice, and electrolyte that was inoculated with
microorganisms. Modeling of the microbes during exposure to
these intense electric fields is described. Suspension solution
and liquid protoplasm are modeled with a relative pemittivity
of 81 and each contains two species of ionic charge carriers (one
species plus and one species minus). The microbe membrane is
modeled with a relative permittivity of 2 and zero conductivity.
The continuity equation has been solved numerically in 1
dimension for low ion concentration to investigate the transient
behavior of space charge sheaths near the microbes. Free
surface charge density, which accumulates on both sides of the
cell membrane is also described by this model. Mesh size and
simulation time step were adjusted to resolve space charge
sheath dynamics near the microbes.
INTRODUCTION
Pasteurization of liquid foods by pulsed electric fields
has been studied as an alternate to conventional thermal
pasteurization [ 1,2,3,4,5]. Microbe mortality may be caused
by electroporation which is the creation of pores in the cell
membrane when voltage drop across the membrane exceeds
about 1 volt [6]. Electric fields on the order of 40 kV/cm
have been applied to a variety of microbes that have included
Escherichia coli, Staphylococcus aureus, Bacillus subtilis,
Saccharomyces cerevisiae, Yersinia enterocolitica, Listeria
monocytogenes, and Candida albicans. Liquid suspensions
have included milk, apple juice, NaCl solution, and a
simulated milk solution (described in [SI). Depending on
parameters, these pulsed electric fields have produced
PLANAR MODEL
Assumptions
Figure 1 shows the five regions being modeled and Table
1 describes parameters used to characterize each region.
Initially all interfaces are assumed to have zero free surface
charge density but free surface charge accumulates at the
interfaces as the simulation progresses.
Suspenslor
Cell
Liquid
Cell
Suspenslori
Rotoplm Ivk3rrbrat-e
Llquld
I/
\
I
\_I
I
\
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Table 1.
-+V.(n,iia)
h a
=0
at
where
ii, = p,E
where
pa
At
(2)
is electric field.
where i and j are indices that represent the i" spatial grid
point and the j" time step, respectively. This is a time
centered algorithm, characterized by a high order of accuracy
[ 141. For convenience, we form the dimensionless quantity
(3)
The third term is assumed small enough to be neglected (this
will be valid only for small volume charge density) giving
(4)
Numerical Algorithm
The numerical simulation begins at t=O by assuming a
step increase in the D field (throughout all 5 regions) from
zero to some value Do. Evolving volume charge density in
sheaths and surface charge density at interfaces are assumed
small enough that D is not significantly modified from its
externally applied value, Do. 'Thus we have
Dl = D2 = D3 = D4= D5= Do
and
(5)
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Results
For the parameters shown in Table 2 the numerical
simulation showed the development of volume space charge
sheaths on both sides of the cell membrane as shown in
Figure2.
Space charge sheaths result from uncompensated charge
that is born when charge of the opposite sign vacates a region
-m 0
<
E
0,
>
I
0
s -0
z(um)
igure 2. Volume space charge density as a function of position and time.
860
DISCUSSION
For more dense ion fluids, volume charge density in
the sheaths and free surface charge density at interfaces will
significantly modify the D field so that it will no longer be
equal to the externally imposed value Do . For that condition,
the more complicated model described in Eq. (3) will be
used. Following that, the model will be extended to two
dimensions.
ACKNOWLEDGMENT
This work was supported in part by U. S . Army Research
Office Grant #DAAH04-94-G-0113.
REFERENCES
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