Solved with COMSOL Multiphysics 5.

PN-Diode Circuit
This model compares a full device level simulation with a lumped circuit model to
simulate a half-wave rectifier.

Introduction
The pn-diode is of great importance in modern electronic applications. It is often used
as a rectifier to convert alternative currents (AC) to direct currents (DC) by blocking
either the positive or negative half of the AC wave. The present example simulates the
transient behavior of a pn-diode used as the active component of a half-wave rectifier
circuit -see Figure 1

Figure 1: A basic half-wave rectifier circuit. An AC voltage source is connected to the

anode of a pn-diode. The resistor represents the load of the circuit.
In this example, a full level device simulation is made by connecting a 2D meshed
pn-junction to a circuit containing a sinusoidal source, a resistor, and a ground (the
half-wave rectifier circuit is displayed in Figure 1). In order to validate the results, the
outputs of the full device simulation are compared to the circuit response obtained
using a large signal diode model (see the electric circuit).

Model Definition
Figure 2 shows the modeled device cross-section and doping profile. The diode has a
width of 10 m and a depth of 7 m. The length of the diode has been set to 10 m
(not meshed). A Shockley-Read-Hall recombination is also added to the model in
order to simulate the type of recombination usually observed in indirect band-gap

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semiconductor such as silicon, which is the material used in this example. The meshed
diode is connected to the half wave circuit using an ohmic terminal. For the large signal
diode model, the saturation current and ideality factor have been set to values fitting
the I-V curve of the modeled diode.

n+
n

p
n

n+
Figure 2: Top: net doping concentration along the symmetry line (center of the diode cross
section). Bottom: cross section of the simulated device. To save computation time, only half
of the diode is meshed, that is, the right side delimited by the axis of symmetry (red dashed
line).

Results and Discussion

Figure 3 shows the output voltages obtained from both the full level simulation and
large signal model. As expected from the reverse operation of a pn-diode, clipping
occurs on the negative half of the wave in the diode.

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Figure 3: Output voltages obtained from both the full level simulation and large signal
model.Voltages have been monitored at the source, diode, and load ends.

Model Library path: Semiconductor_Module/Device_Models/

pn_diode_circuit

Modeling Instructions
From the File menu, choose New.
NEW

1 In the New window, click Model Wizard.

MODEL WIZARD

1 In the Model Wizard window, click 2D.

2 In the Select physics tree, select Semiconductor>Semiconductor (semi).
3 Click Add.

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4 In the Select physics tree, select AC/DC>Electrical Circuit (cir).

5 Click Add.
6 Click Study.
7 In the Select study tree, select Preset Studies for Selected Physics Interfaces>Time
Dependent.
8 Click Done.
DEFINITIONS

Parameters
1 On the Model toolbar, click Parameters.
2 In the Settings window for Parameters, locate the Parameters section.
3 Click Load from File.
4 Browse to the models Model Library folder and double-click the file
pn_diode_circuit_parameters.txt.
GEOMETRY 1

1 In the Model Builder window, under Component 1 (comp1) click Geometry 1.

2 In the Settings window for Geometry, locate the Units section.
3 From the Length unit list, choose m.

Rectangle 1 (r1)
1 On the Geometry toolbar, click Primitives and choose Rectangle.
2 In the Settings window for Rectangle, locate the Size section.
3 In the Width text field, type w_diode/2.
4 In the Height text field, type d_diode.
5 Locate the Position section. In the y text field, type -d_diode.

The doping profiles will be created in the semiconductor interface.However, in order

to have a finer mesh in the junction vicinities, it is wise to create geometry objects
defining the doping regions in the semiconducting material.

Rectangle 2 (r2)
1 On the Geometry toolbar, click Primitives and choose Rectangle.
2 In the Settings window for Rectangle, locate the Size section.
3 In the Width text field, type w_anode/2+d_p.
4 In the Height text field, type d_p.

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5 Locate the Position section. In the y text field, type -d_p.

Fillet 1 (fil1)
1 On the Geometry toolbar, click Fillet.
2 On the object r2, select Point 2 only.
3 In the Settings window for Fillet, locate the Radius section.
4 In the Radius text field, type d_p.

Point 1 (pt1)
1 On the Geometry toolbar, click Primitives and choose Point.
2 In the Settings window for Point, locate the Point section.
3 In the x text field, type w_anode/2.
4 Click the Build All Objects button.

Load the semiconductor material properties for silicon.

ADD MATERIAL

1 On the Model toolbar, click Add Material to open the Add Material window.
2 Go to the Add Material window.
3 In the tree, select Semiconductors>Si - Silicon.
4 Click Add to Component in the window toolbar.
5 On the Model toolbar, click Add Material to close the Add Material window.
SEMICONDUCTOR (SEMI)

Analytic Doping Model 1

1 On the Physics toolbar, click Domains and choose Analytic Doping Model.
2 In the Settings window for Analytic Doping Model, locate the Domain Selection

section.
3 From the Selection list, choose All domains.
4 Locate the Impurity section. From the Impurity type list, choose Donor doping
(n-type).
5 In the ND0 text field, type Nd_back.

Analytic Doping Model 2

1 On the Physics toolbar, click Domains and choose Analytic Doping Model.
2 In the Settings window for Analytic Doping Model, locate the Domain Selection

section.

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3 From the Selection list, choose All domains.

4 Locate the Distribution section. From the list, choose Box.
5 Locate the Uniform Region section. Specify the r0 vector as
0[um]

-d_diode

6 In the W text field, type w_diode/2.

7 Locate the Impurity section. From the Impurity type list, choose Donor doping
(n-type).
8 In the ND0 text field, type Nd_max.
9 Locate the Profile section. From the Nb list, choose Donor concentration (semi/adm1).

Analytic Doping Model 3

1 On the Physics toolbar, click Domains and choose Analytic Doping Model.
2 In the Settings window for Analytic Doping Model, locate the Domain Selection

section.
3 From the Selection list, choose All domains.
4 Locate the Distribution section. From the list, choose Box.
5 Locate the Uniform Region section. In the W text field, type w_anode/2.
6 In the D text field, type d_p.
7 Locate the Impurity section. In the NA0 text field, type Na_max.
8 Locate the Profile section. From the Nb list, choose Donor concentration (semi/adm1).

Trap-Assisted Recombination 1
1 On the Physics toolbar, click Domains and choose Trap-Assisted Recombination.
2 In the Settings window for Trap-Assisted Recombination, locate the Domain
Selection section.
3 From the Selection list, choose All domains.

Metal Contact 1
1 On the Physics toolbar, click Boundaries and choose Metal Contact.
2 Select Boundary 5 only.
3 In the Settings window for Metal Contact, locate the Terminal section.
4 From the Terminal type list, choose Circuit.

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Metal Contact 2
1 On the Physics toolbar, click Boundaries and choose Metal Contact.
2 Select Boundary 2 only.
ELECTRICAL CIRCUIT (CIR)

1 In the Model Builder window, under Component 1 (comp1) right-click Electrical Circuit
(cir) and choose Resistor.

Use a 100 kOhm load resistor to limit the current in the circuit.

Resistor 1
1 In the Settings window for Resistor, locate the Node Connections section.
2 In the table, enter the following settings:
Label

Node names

3 Locate the Device Parameters section. In the R text field, type 100[kohm].

Voltage Source 1
1 In the Model Builder window, right-click Electrical Circuit (cir) and choose Voltage
Source.
2 In the Settings window for Voltage Source, locate the Node Connections section.
3 In the table, enter the following settings:
Label

Node names

4 Locate the Device Parameters section. From the Source type list, choose Sine source.
5 In the Vsrc text field, type Vac.
6 In the f text field, type f.

External I Vs. U 1
1 Right-click Electrical Circuit (cir) and choose External Couplings>External I Vs. U.
2 In the Settings window for External I Vs. U, locate the Node Connections section.

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3 In the table, enter the following settings:

Label

Node names

4 Locate the External Device section. From the V list, choose Terminal voltage (semi/
mc1).
STUDY 1

Step 1: Time Dependent

1 In the Model Builder window, under Study 1 click Step 1: Time Dependent.
2 In the Settings window for Time Dependent, locate the Study Settings section.
3 Click Range.
4 In the Range dialog box, type tmax/100 in the Step text field.
5 In the Stop text field, type tmax.
6 Click Replace.

Solution 1
1 On the Study toolbar, click Show Default Solver.
2 In the Model Builder window, expand the Solution 1 node.
3 In the Model Builder window, expand the Study 1>Solver Configurations>Solution
1>Time-Dependent Solver 1 node, then click Fully Coupled 1.
4 In the Settings window for Fully Coupled, click to expand the Method and
termination section.
5 Locate the Method and Termination section. From the Nonlinear method list, choose
Automatic (Newton).

Step 1: Time Dependent

On the Study toolbar, click Compute.
RESULTS

Electron Concentration (semi)

By adding another circuit model, you can compare our coupled model with a full
circuit model (using a large-signal diode model).

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ADD PHYSICS

1 On the Model toolbar, click Add Physics to open the Add Physics window.
2 Go to the Add Physics window.
3 In the Add physics tree, select AC/DC>Electrical Circuit (cir).
4 Click Add to Component in the window toolbar.
5 On the Model toolbar, click Add Physics to close the Add Physics window.
ELECTRICAL CIRCUIT 2 (CIR2)

Voltage Source 1
1 In the Model Builder window, under Component 1 (comp1) right-click Electrical Circuit
2 (cir2) and choose Voltage Source.
2 In the Settings window for Voltage Source, locate the Identifier section.
3 In the V text field, type 2.
4 Locate the Node Connections section. In the table, enter the following settings:
Label

Node names

5 Locate the Device Parameters section. From the Source type list, choose Sine source.
6 In the Vsrc text field, type Vac.
7 In the f text field, type f.

Use the diode large scale model with the following parameters.

Diode 1
1 In the Model Builder window, right-click Electrical Circuit 2 (cir2) and choose Diode.
2 In the Settings window for Diode, locate the Identifier section.
3 In the D text field, type 2.
4 Locate the Node Connections section. In the table, enter the following settings:
Label

Node names

5 Locate the Model Parameters section. In the IS text field, type I0.
6 In the N text field, type eta.

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Resistor 1
1 Right-click Electrical Circuit 2 (cir2) and choose Resistor.
2 In the Settings window for Resistor, locate the Identifier section.
3 In the R text field, type 2.
4 Locate the Node Connections section. In the table, enter the following settings:
Label

Node names

5 Locate the Device Parameters section. In the R text field, type 100[kohm].
ADD STUDY

1 On the Model toolbar, click Add Study to open the Add Study window.
2 Go to the Add Study window.
3 Find the Studies subsection. In the Select study tree, select Preset Studies>Time
Dependent.
4 Click Add Study in the window toolbar.
5 On the Model toolbar, click Add Study to close the Add Study window.
STUDY 2

Step 1: Time Dependent

1 In the Model Builder window, under Study 2 click Step 1: Time Dependent.
2 In the Settings window for Time Dependent, locate the Study Settings section.
3 Click Range.
4 In the Range dialog box, type tmax/100 in the Step text field.
5 In the Stop text field, type tmax.
6 Click Replace.
7 In the Settings window for Time Dependent, locate the Study Settings section.
8 Select the Relative tolerance check box.
9 In the associated text field, type 0.001.

Solution 2
1 On the Study toolbar, click Show Default Solver.
2 In the Model Builder window, expand the Solution 2 node.

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3 In the Model Builder window, expand the Study 2>Solver Configurations>Solution

2>Time-Dependent Solver 1 node, then click Fully Coupled 1.
4 In the Settings window for Fully Coupled, click to expand the Method and
termination section.
5 Locate the Method and Termination section. From the Nonlinear method list, choose
Automatic (Newton).

Step 1: Time Dependent

1 In the Model Builder window, under Study 2 click Step 1: Time Dependent.
2 In the Settings window for Time Dependent, locate the Physics and Variables
Selection section.
3 In the table, enter the following settings:
Physics interface

Solve for

Discretization

Semiconductor

physics

Electrical Circuit

physics

4 On the Study toolbar, click Compute.

RESULTS

1D Plot Group 4
1 On the Model toolbar, click Add Plot Group and choose 1D Plot Group.
2 In the Model Builder window, under Results right-click 1D Plot Group 4 and choose
Rename.
3 In the Rename 1D Plot Group dialog box, type Voltage probes in the New label text

field.
4 Click OK.
5 In the Settings window for 1D Plot Group, locate the Data section.
6 From the Data set list, choose None.
7 Click to expand the Title section. From the Title type list, choose None.
8 Locate the Plot Settings section. Select the x-axis label check box.
9 In the associated text field, type time (s).
10 Select the y-axis label check box.
11 In the associated text field, type Voltage (V).
12 Click to expand the Legend section. From the Position list, choose Lower right.

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Voltage probes
1 On the 1D plot group toolbar, click Global.
2 In the Settings window for Global, locate the Data section.
3 From the Data set list, choose Study 1/Solution 1.
4 Click Replace Expression in the upper-right corner of the y-axis data section. From

the menu, choose Model>Component 1>Electrical Circuit>Two pin

devices>V1>cir.V1_v - Voltage across device V1.
5 Locate the y-Axis Data section. In the table, enter the following settings:
Expression

Unit

Description

cir.V1_v

Voltage across device V1

cir.IvsU1_v

Voltage across device

External I Vs. U 1

cir.R1_v

Voltage across device R1

6 Click to expand the Coloring and style section. Locate the Coloring and Style section.

Find the Line markers subsection. From the Marker list, choose Cycle.
7 On the 1D plot group toolbar, click Global.
8 In the Settings window for Global, locate the Data section.
9 From the Data set list, choose Study 2/Solution 2.
10 Locate the y-Axis Data section. In the table, enter the following settings:
Expression

Unit

Description

cir2.V1_v

Voltage across device V2

cir2.D1_v

Voltage across device D2

cir2.R1_v

Voltage across device R2

11 Locate the Coloring and Style section. Find the Line markers subsection. From the
Marker list, choose Cycle.
12 On the 1D plot group toolbar, click Plot.

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