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    BC108 107 Datasheet

    Uploaded by

    Bagaz Felix
    This document provides information on the BC107 and BC108 low noise general purpose audio amplifier transistors. It includes maximum ratings, internal schematic diagrams, thermal data, electrical characteristics such as gain, capacitance and noise figure, and mechanical specifications for the TO-18 metal case package. Key specifications include a current gain of 110-200, input impedance of 3-7K ohms, and noise figure below 5.5dB.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    BC108 107 Datasheet

    Uploaded by

    Bagaz Felix
    96 views7 pages
    This document provides information on the BC107 and BC108 low noise general purpose audio amplifier transistors. It includes maximum ratings, internal schematic diagrams, thermal data, electrical characteristics such as gain, capacitance and noise figure, and mechanical specifications for the TO-18 metal case package. Key specifications include a current gain of 110-200, input impedance of 3-7K ohms, and noise figure below 5.5dB.

    Original Description:

    datasheet bc108

    Original Title

    BC108_107_datasheet

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    This document provides information on the BC107 and BC108 low noise general purpose audio amplifier transistors. It includes maximum ratings, internal schematic diagrams, thermal data, electrical characteristics such as gain, capacitance and noise figure, and mechanical specifications for the TO-18 metal case package. Key specifications include a current gain of 110-200, input impedance of 3-7K ohms, and noise figure below 5.5dB.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    96 views7 pages

    BC108 107 Datasheet

    Uploaded by

    Bagaz Felix
    This document provides information on the BC107 and BC108 low noise general purpose audio amplifier transistors. It includes maximum ratings, internal schematic diagrams, thermal data, electrical characteristics such as gain, capacitance and noise figure, and mechanical specifications for the TO-18 metal case package. Key specifications include a current gain of 110-200, input impedance of 3-7K ohms, and noise figure below 5.5dB.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 7

    BC107

    BC108
    LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS
    DESCRIPTION
    The BC107 and BC108 are silicon planar
    epitaxial NPN transistors in TO-18 metal case.
    They are suitable for use in driver stages, low
    noise input stages and signal processing circuits
    of television reveivers. The PNP complemet for
    BC107 is BC177.

    TO-18

    INTERNAL SCHEMATIC DIAGRAM

    ABSOLUTE MAXIMUM RATINGS


    Symbol

    Parameter

    Value

    Unit

    BC107

    BC108

    V CBO

    Collector-Base Voltage (IE = 0)

    50

    30

    V CEO

    Collector-Emitter Voltage (I B = 0)

    45

    20

    V EBO

    Emitter-Base Voltage (I C = 0)

    IC

    Collector Current
    o

    P t ot

    Total Dissipation at T amb 25 C


    o
    at T case 25 C

    T stg

    St orage Temperature

    Tj

    Max. Operating Junction Temperature

    November 1997

    100

    mA

    0.3
    0.75

    W
    W

    -55 to 175

    175

    C
    1/6

    BC107/BC108
    THERMAL DATA
    R t hj-ca se
    R t hj- amb

    Thermal Resistance Junction-Case


    Thermal Resistance Junction-Ambient

    Max
    Max

    200
    500

    C/W
    C/W

    ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)


    Symb ol
    I CBO

    Parameter
    Collector Cut-off
    Current (IE = 0)

    Test Cond ition s


    for BC107
    V CB = 40 V
    V CB = 40 V
    for BC108
    V CB = 20 V
    V CB = 20 V

    Min.

    Typ .

    Max.

    Un it

    15
    15

    nA
    A

    15
    15

    A
    A

    T ca s e = 150 C

    T ca s e = 150 C

    Collector-Base
    Breakdown Voltage
    (IE = 0)

    I C = 10 A
    for BC107
    for BC108

    50
    30

    V
    V

    V ( BR)CEO Collector-Emitter
    Breakdown Voltage
    (I B = 0)

    I C = 10 mA
    for BC107
    for BC108

    45
    20

    V
    V

    V (BR)EBO

    Emitter-Base
    Breakdown Voltage
    (I C = 0)

    I E = 10 A
    for BC107
    for BC108

    6
    5

    V
    V

    V CE(sat )

    Collector-Emitter
    Saturation Voltage

    I C = 10 mA
    I C = 100 mA

    IB = 0.5 mA
    I B = 5 mA

    70
    200

    V BE(s at)

    Base-Emitter
    Saturation Voltage

    I C = 10 mA
    I C = 100 mA

    IB = 0.5 mA
    I B = 5 mA

    750
    950

    V BE(on)

    Base-Emitter O n
    Voltage

    I C = 2 mA
    I C = 10 mA

    VCE = 5 V
    V CE = 5 V

    h FE

    DC Current G ain

    I C = 2 mA
    for BC107
    for BC107
    for BC107
    for BC108
    for BC108
    for BC108
    for BC108
    I C = 10 A
    for BC107
    for BC107
    for BC107
    for BC108
    for BC108
    for BC108
    for BC108

    VCE = 5 V

    V (BR)CBO

    h fe

    Small Signal Current


    Gain

    Gr. A
    Gr. B
    Gr. C
    V CE = 5 V

    650
    700

    110
    110
    200
    110
    110
    200
    420

    Gr. A
    Gr. B

    40

    Gr. A
    Gr. B
    Gr. C

    40
    100

    I C = 2 mA
    V CE = 5 V
    f = 1KHz
    for BC107
    for BC107 Gr. A
    for BC107 Gr. B
    for BC108
    for BC108 Gr. A
    for BC108 Gr. B
    for BC108 Gr. C
    I C = 10 mA VCE = 10 V f = 100 MHz

    Pulsed: Pulse duration = 300 s, duty cycle 1 %

    2/6

    Gr. A
    Gr. B

    550

    250
    600

    mV
    mV
    700
    770
    450
    220
    450
    800
    220
    450
    800

    120
    90
    150
    120
    90
    150
    270
    250
    190
    300
    370
    190
    300
    500
    2

    mV
    mV

    mV
    mV

    BC107/BC108
    ELECTRICAL CHARACTERISTICS (continued)
    Symb ol

    Parameter

    Test Cond ition s

    Min.

    Typ .

    Max.

    Un it

    pF

    C CBO

    Collector Base
    Capacitance

    IE = 0

    V CB = 10 V

    f = 1MHz

    C EBO

    Emitter Base
    Capacitance

    IC = 0

    V EB = 0.5 V

    f = 1MHz

    12

    NF

    Noise Figure

    I C = 0.2 mA V CE = 5 V
    B = 200Hz
    f = 1KHz
    R g = 2K

    hie

    Input Impedance

    I C = 2 mA
    for BC107
    for BC107
    for BC107
    for BC108
    for BC108
    for BC108
    for BC108

    hre

    h oe

    Reverse Voltage Ratio

    Output Admittance

    I C = 2 mA
    for BC107
    for BC107
    for BC107
    for BC108
    for BC108
    for BC108
    for BC108
    I C = 2 mA
    for BC107
    for BC107
    for BC107
    for BC108
    for BC108
    for BC108
    for BC108

    V CE = 5 V

    Gr. A
    Gr. B
    Gr. C

    Gr. A
    Gr. B
    Gr. C

    Gr. A
    Gr. B
    Gr. A
    Gr. B
    Gr. C

    dB

    4
    3
    4.8
    5.5
    3
    4.8
    7

    K
    K
    K
    K
    K
    K
    K

    2.2
    1.7
    2.7
    3.1
    1.7
    2.7
    3.8

    10 -4
    -4
    10
    10 -4
    -4
    10
    -4
    10
    -4
    10
    -4
    10

    30
    13
    26
    30
    13
    26
    34

    S
    S
    S
    S
    S
    S
    S

    f = 1KHz

    Gr. A
    Gr. B

    V CE = 5 V

    10

    f = 1KHz

    Gr. A
    Gr. B

    V CE = 5 V

    pF

    f = 1KHz

    Pulsed: Pulse duration = 300 s, duty cycle 1 %

    DC Normalized Current Gain.

    Collector--emitter Saturation Voltage.

    3/6

    BC107/BC108
    Collector-base Capacitance.

    Power Rating Chart.

    4/6

    Transition Frequency.

    BC107/BC108

    TO-18 MECHANICAL DATA


    mm

    inch

    DIM.
    MIN.
    A

    TYP.

    MAX.

    MIN.

    TYP.

    12.7

    MAX.

    0.500

    0.49

    0.019

    5.3

    0.208

    4.9

    0.193

    5.8

    0.228

    2.54

    0.100

    1.2

    0.047

    1.16

    0.045

    45o

    45o

    G
    I

    L
    C

    0016043

    5/6

    BC107/BC108

    Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
    consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
    license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
    in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
    SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
    written approval of SGS-THOMSON Microelectonics.
    1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
    SGS-THOMSON Microelectronics GROUP OF COMPANIES
    Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
    ...

    6/6

    This datasheet has been download from:


    www.datasheetcatalog.com
    Datasheets for electronics components.

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