CMOS Process Steps

EE-612:
Lecture 22:
CMOS Process Steps
Mark Lundstrom
Electrical and Computer Engineering
Purdue University
West Lafayette, IN USA
Fall 2006
NCN
www.nanohub.org
Lundstrom EE-612 F06
outline
1) Unit Process Operations

2) Process Variations
unit process operations

1)
Oxidation
2)
Diffusion
3)
Ion Implantation
4)
RTA/RTP
5)
Chemical Vapor Deposition
6)
Lithography
7)
Etching
8)
Metalization
9)
Well Structures
10) Isolation
11) Source / Drain structures
useful references
1)
J.D. Plummer, M.D. Deal, P.B. Griffin, Silicon VLSI

Technology, Fundamentals, Practice, and Modeling, Prentice
Hall, Upper Saddle River, NJ, 2000.
2)
S.A. Campbell, The Science and Engineering of

Microelectronic Fabrication, 2nd Ed., Oxford Univ. Press, New
York, 2001.
oxidation
Si + O 2 SiO 2 (dry)
Si+ H 2 O SiO 2 (wet)
wafers
heater
O 2 or H 2 O
+carrier gas
T = 800 - 1100 C
fused quartz
furnace tube
oxidation and doping

C
phophorous m > 1
boron m < 1
x
CSi
m=
CSiO2
local oxidation
Si3 N 4
SiO2
Si
local oxidation (LOCOS)
Si3 N 4
SiO2
field
oxide
Si
'bird's beak'
constant source diffusion

C
CS
C(x) = CS erfc x / 2 Dt
Q = C (x,t )dx = 2CS Dt

0
dopant-containing
gas (e.g. POCl3)
time
x
Limited source diffusion

C
C (x,t ) = Q / Dt exp x / 2 Dt
CS
t=0
predep
time
x
10
diffusion
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
substitutional
D(T ) = D0 e EA / kB T
interstitialcy
interstitial
oxidation enhanced diffusion

11
ion implantation
energetic ions bombard silicon wafer
magnet
acceleration
wafer
r r
F = Q B
deflection
I
ion source
12
ion implantation
Si
RP (E)
RP (E)
N (x ) = N p exp x Rp
2Rp 2 Q = 2 N p Rp
implant damage (anneal)

13
ion implantation (ii)
Projected range (m)
1.0
As
0.1
0.01
10
100
1000
Acceleration energy (keV)

14
channeling
C (x )
RP
tilted 3 deg
RP
15
rapid thermal annealing
lamps
reflector
thermal budget
Dt
quartz window
wafer
gas inlet
16
chemical vapor deposition

reaction chamber
gas inlet
Dt
wafer
susceptor
gas exhaust
2SiH 4 + 4NH 3 Si 3N 4 + 12H 2
silicon nitride
SiH 4 Si+2H 2
poly silicon
SiH 4 +O 2 SiO 2 +2H 2
silicon dioxide
17
plasma CVD / etching

RF power in
gas inlet
heater
wafer
gas exhaust
lower temperature reduces

thermal budget Dt
18
lithography
optical source
wavelength,
lens
shutter
contact
or
proximity
mask
resist
wafer
expose, develop, etch

19
projection printing
UV source
lens 1
mask
lens 2
wafer
20
registration errors
EE
E EE EE EE EE
misalignment
run out
21
phase shift lithography

conventional mask
phase shift mask
electric field at mask

electric field at mask
intensity at wafer
intensity at wafer
22
pattern transfer
negative resist
(less soluble after exposure)
wafer
wafer
positive resist
(more soluble after exposure)
resist:
optically sensitive polymer which,
when exposed to UV changes its
solubility in specific chemicals
wafer
23
etching
wet chemical etching
(isotropic)
dry etching (plasma or reactive ion

etching - RIE)
(anisotropic)
wafer
wafer
undercut
chemicals react with
underlying material,
but not resist
ionized gases react

with underlying
material, but not
resist
24
pattern transfer (ii)

mask
L Drawn
chrome
lithography
bias
resist
etch
bias
LGate (physical)
25
metalization
Tungsten (W) plugs

for first layer
metal dep
CMP
www.itrs.net
2005 Edition
26
outline

27
discrete doping effects
V = W L xj
N+
N+
example:
L=
50 nm
W = 100 nm
25 nm
xj =
NA = 1018 cm-3
NTOT = 125
P (NA cm-3)
Number of dopants in the critical volume is a statistical quantity

28
discrete doping effects (ii)

source
drain
Effects:
1) VT (10s of mV)
2) lower avg. VT (10s of mV)
3) asymmetry in ID
3D transport leads to inhomogeneous conduction

(see Wong and Taur, IEDM, 1993, p. 705)
29
discrete doping effects (iii)
35 nm
MOSFET
AFM measurements, Fujitsu
(simulations from A. Asenov group,

Univ. of Glasgow)
30
statistical variability
Line edge roughness
discrete
dopants
From A. Asenov, Univ. of Glasgow

31
variability is becoming a major issue
G. Declerck, Keynote talk, VLSI Technol. Symp. 2005

32
outline

For a basic, CMOS process flow for an STI

(shallow trench isolation process), see:
http://www.rit.edu/~lffeee/AdvCmos2003.pdf
33
CMOS process flow

For a basic, CMOS process flow for an STI
(shallow trench isolation process), see:
http://www.rit.edu/~lffeee/AdvCmos2003.pdf
The author is indebted to Dr. Lynn Fuller of Rochester

Institute of Technology for making these materials
available. What follows is a condensed version of a
more complete presentation by Dr. Fuller. I regret any
errors that I may have introduced by shortening these
materials.
-Mark Lundstrom 10/19/06
34

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EE-612:

1) Unit Process Operations

Lundstrom EE-612 F06

unit process operations

Chemical Vapor Deposition

J.D. Plummer, M.D. Deal, P.B. Griffin, Silicon VLSI

S.A. Campbell, The Science and Engineering of

Lundstrom EE-612 F06

Lundstrom EE-612 F06

oxidation and doping

Lundstrom EE-612 F06

local oxidation (LOCOS)

constant source diffusion

Q = C (x,t )dx = 2CS Dt

Limited source diffusion

oxidation enhanced diffusion

implant damage (anneal)

ion implantation (ii)

Projected range (m)

Acceleration energy (keV)

Lundstrom EE-612 F06

rapid thermal annealing

chemical vapor deposition

2SiH 4 + 4NH 3 Si 3N 4 + 12H 2

SiH 4 +O 2 SiO 2 +2H 2

Lundstrom EE-612 F06

plasma CVD / etching

lower temperature reduces

expose, develop, etch

Lundstrom EE-612 F06

Lundstrom EE-612 F06

phase shift lithography

phase shift mask

electric field at mask

dry etching (plasma or reactive ion

ionized gases react

pattern transfer (ii)

Tungsten (W) plugs

Lundstrom EE-612 F06

1) Unit Process Operations

Lundstrom EE-612 F06

discrete doping effects

Number of dopants in the critical volume is a statistical quantity

discrete doping effects (ii)

3D transport leads to inhomogeneous conduction

discrete doping effects (iii)

AFM measurements, Fujitsu

(simulations from A. Asenov group,

Lundstrom EE-612 F06

From A. Asenov, Univ. of Glasgow

variability is becoming a major issue

G. Declerck, Keynote talk, VLSI Technol. Symp. 2005

1) Unit Process Operations

For a basic, CMOS process flow for an STI

CMOS process flow

The author is indebted to Dr. Lynn Fuller of Rochester

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