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    ME25N06 (-G) : N-Channel Enhancement MOSFET

    Uploaded by

    Tanja Ikalovic
    The document provides information on the ME25N06 N-Channel Enhancement MOSFET. It has an on-resistance of 62mΩ or less at 10V and 86mΩ or less at 4.5V. It is suited for low voltage applications such as power management in notebooks and cellular phones where high-side switching and low power loss are needed. Its key features are its super high density cell design for low on-resistance, high current capability, and small surface mount package.

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    © All Rights Reserved
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    ME25N06 (-G) : N-Channel Enhancement MOSFET

    Uploaded by

    Tanja Ikalovic
    399 views5 pages
    The document provides information on the ME25N06 N-Channel Enhancement MOSFET. It has an on-resistance of 62mΩ or less at 10V and 86mΩ or less at 4.5V. It is suited for low voltage applications such as power management in notebooks and cellular phones where high-side switching and low power loss are needed. Its key features are its super high density cell design for low on-resistance, high current capability, and small surface mount package.

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    200942310523257952.pdf

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    The document provides information on the ME25N06 N-Channel Enhancement MOSFET. It has an on-resistance of 62mΩ or less at 10V and 86mΩ or less at 4.5V. It is suited for low voltage applications such as power management in notebooks and cellular phones where high-side switching and low power loss are needed. Its key features are its super high density cell design for low on-resistance, high current capability, and small surface mount package.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    399 views5 pages

    ME25N06 (-G) : N-Channel Enhancement MOSFET

    Uploaded by

    Tanja Ikalovic
    The document provides information on the ME25N06 N-Channel Enhancement MOSFET. It has an on-resistance of 62mΩ or less at 10V and 86mΩ or less at 4.5V. It is suited for low voltage applications such as power management in notebooks and cellular phones where high-side switching and low power loss are needed. Its key features are its super high density cell design for low on-resistance, high current capability, and small surface mount package.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 5

    ME25N06(-G)

    N-Channel Enhancement MOSFET


    GENERAL DESCRIPTION

    FEATURES

    The ME25N06 is the N-Channel logic enhancement mode power

    RDS(ON)62m@VGS=10V

    field effect transistors are produced using high cell density, DMOS
    trench technology. This high density process is especially tailored to
    minimize on-state resistance. These devices are particularly suited
    for low voltage application such as cellular phone and notebook
    computer power management and other battery powered circuits
    where high-side switching, and low in-line power loss are needed in a
    very small outline surface mount package.

    RDS(ON)86m@VGS=4.5V
    Super high density cell design for extremely low RDS(ON)
    Exceptional on-resistance and maximum DC current
    capability

    APPLICATIONS
    Power Management in Note book
    DC/DC Converter
    Load Switch
    LCD Display inverter

    PIN

    CONFIGURATION
    (TO-252)
    Top View

    e Ordering Information: ME25N06 (Pb-free)


    ME25N06-G (Green product)

    Absolute Maximum Ratings (TA=25 Unless Otherwise Noted)


    Parameter

    Symbol

    Rating

    Unit

    Drain-Source Voltage

    VDSS

    60

    Gate-Source Voltage

    VGSS

    25

    Continuous Drain

    TC=25

    Current(Tj=150)

    TC=70

    Pulsed Drain Current


    Maximum Power Dissipation

    16

    ID
    IDM

    TC=25
    TC=70

    Operating Junction Temperature


    Thermal Resistance-Junction to Case *

    65

    RJC

    25

    PD
    TJ

    13

    16
    -55 to 150
    Steady State

    /W

    * The device mounted on 1in2 FR4 board with 2 oz copper

    Dec,2008-Ver1.0

    01

    ME25N06(-G)

    N-Channel Enhancement MOSFET

    Electrical Characteristics (TA =25 Unless Otherwise Specified)


    Symbol

    Parameter

    Limit

    Min

    BVDSS

    Drain-Source Breakdown Voltage

    VGS=0V, ID=250A

    60

    VGS(th)

    Gate Threshold Voltage

    VDS=VGS, ID=250A

    IGSS

    Gate Leakage Current

    IDSS

    Zero Gate Voltage Drain Current

    RDS(ON)

    Drain-Source On-Resistance

    VSD

    Diode Forward Voltage

    Typ

    Max

    Unit

    STATIC

    V
    3

    VDS=0V, VGS=25V

    100

    nA

    VDS=60V, VGS=0V

    VDS=60V, VGS=0V,TJ=55

    10

    VGS=10V, ID= 15A

    52

    62

    VGS=4.5V, ID= 10A

    70

    86

    IS=15A, VGS=0V

    m
    V

    DYNAMIC
    Qg

    Total Gate Charge

    Qgs

    Gate-Source Charge

    Qgd

    Gate-Drain Charge

    Rg

    Gate Resistance

    Ciss

    Input Capacitance

    Coss

    Output Capacitance

    Crss

    Reverse Transfer Capacitance

    td(on)

    Turn-On Delay Time

    tr

    Turn-On Rise Time

    td(off)

    Turn-Off Delay Time

    tf

    Turn-Off Fall Time

    17
    VDS=48V, VGS=10V, ID=16A

    4.2

    nC

    5
    VDS=0V, VGS=0V, f=1MHz
    VDS=30V, VGS=0V,
    f=1MHz

    VDD=30V, RL =15
    ID=1A, VGEN=10V
    RG=3

    0.6

    523
    47

    pF

    14
    11
    13
    34

    ns

    Notes: a, pulse test: pulse width 300us, duty cycle 2%,Guaranteed by design, not subject to production testing.

    Matsuki reserves the right to improve product design, functions and reliability without notice.

    Dec,2008-Ver1.0

    02

    N-Channel Enhancement MOSFET

    ME25N06(-G)

    Typical Characteristics (TJ =25 Noted)

    Dec,2008-Ver1.0

    03

    N-Channel Enhancement MOSFET

    ME25N06(-G)

    Typical Characteristics (TJ =25 Noted)

    Dec,2008-Ver1.0

    04

    ME25N06(-G)

    N-Channel Enhancement MOSFET

    TO-252 Package Outline

    SYMBOL
    A
    A1
    B
    B1
    B2
    C
    D
    D2
    D3
    H
    E
    E2
    L
    L1
    L2
    L3
    P

    Dec,2008-Ver1.0

    MILLIMETERS (mm)
    MIN
    MAX
    2.00
    2.50
    0.90
    1.30
    0.50
    0.85
    0.50
    0.80
    0.50
    1.00
    0.40
    0.60
    5.20
    5.70
    6.50
    7.30
    2.20
    3.00
    9.50
    10.50
    6.30
    6.80
    4.50
    5.50
    1.30
    1.70
    0.90
    1.70
    0.50
    1.10
    0
    0.30
    2.00
    2.80

    05

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