IMPATT and TRAPATT diodes are types of semiconductor devices that operate at microwave frequencies due to avalanche breakdown and transit time effects. IMPATT diodes use avalanche ionization and operate between 3-100 GHz, providing high power capability. TRAPATT diodes form a trapped plasma within the junction which lowers the operating frequency but increases efficiency compared to IMPATT diodes. Both types of diodes exhibit negative resistance, which allows them to be used for oscillation in resonant circuits used in applications like low power radar systems.
IMPATT and TRAPATT diodes are types of semiconductor devices that operate at microwave frequencies due to avalanche breakdown and transit time effects. IMPATT diodes use avalanche ionization and operate between 3-100 GHz, providing high power capability. TRAPATT diodes form a trapped plasma within the junction which lowers the operating frequency but increases efficiency compared to IMPATT diodes. Both types of diodes exhibit negative resistance, which allows them to be used for oscillation in resonant circuits used in applications like low power radar systems.
IMPATT and TRAPATT diodes are types of semiconductor devices that operate at microwave frequencies due to avalanche breakdown and transit time effects. IMPATT diodes use avalanche ionization and operate between 3-100 GHz, providing high power capability. TRAPATT diodes form a trapped plasma within the junction which lowers the operating frequency but increases efficiency compared to IMPATT diodes. Both types of diodes exhibit negative resistance, which allows them to be used for oscillation in resonant circuits used in applications like low power radar systems.
IMPATT and TRAPATT diodes are types of semiconductor devices that operate at microwave frequencies due to avalanche breakdown and transit time effects. IMPATT diodes use avalanche ionization and operate between 3-100 GHz, providing high power capability. TRAPATT diodes form a trapped plasma within the junction which lowers the operating frequency but increases efficiency compared to IMPATT diodes. Both types of diodes exhibit negative resistance, which allows them to be used for oscillation in resonant circuits used in applications like low power radar systems.
TRApped Plasma Avalanche Triggered Transit-TRAPATT diode Transit-TRAPATT diode esparkz.in IMPATT IMPact ionization Avalanche Transit-Time used in high-frequency and microwave devices. made with silicon carbide owing to their high breakdown fields. breakdown fields. operate at frequencies between about 3 and 100 GHz or more. A main advantage is their high power capability. .negative resistance for dc and ac I-V 180 0 Used in low power radar systems to alarms esparkz.in An IMPATT diode is reverse biased above the breakdown voltage. The high doping levels produce a thin depletion region. The resulting high electric field rapidly accelerates carriers which free other carriers in collisions with the crystal lattice. Holes are swept into the P+ region. Electrons drift toward the N regions. The cascading effect drift toward the N regions. The cascading effect creates an avalanche current which increases even as voltage across the junction decreases. The pulses of current lag the voltage peak across the junction. A negative resistance effect in conjunction with a resonant circuit produces oscillations at high power levels. esparkz.in The resonant circuit is the lumped circuit equivalent of a waveguide section, where the IMPATT where the IMPATT diode is mounted. Low power RADAR transmitters may use an IMPATT diode as a power source. They are too noisy for use in the receiver esparkz.in High potential gradient-400KV/cm High power 100MW/cm 3 Operating temperature-upto 250 0 C Avalanche is not instantaneous Drift velocity depend on electric field Time taken by the pulse to reach the cathode Time taken by the pulse to reach the cathode depend on velocity and thickness on highly doped n+ layer. The ac current is approxi 180 degree out of phase with the applied voltage this gives rise to negative conduction and oscillation is resonant circuit. esparkz.in The two important term of Impatt Diode are below - Negative Resistance : A combination of delay involved ingenerating avalanche current multiplication together with delay due to transit time through the drift space provide necessary 180 degree between current and voltage voltage Impatt diode exhibits this kind of negative resistance. Impatt Ionization: If a free electron with suficient kinetic energy strikes a silicon atom, it can break a covalent band and lebrated from the bond .If this kinetic energy is gained from an applied electric field, the liberation of the electron from the bond is term as Impatt ionization. esparkz.in e s p a r k z . i n typical Impatt diode. The gold alloy contact is used as it has low ohmic and thermal resistance. esparkz.in . The original DC field is just at the threshold of the allowing this situation but this threshold voltage is exceed only during the positive half cycle of A.C voltage .it is a cumulative process and takes time. A 90 degree phase difference or a delay has taken place. The holes produced in the avalanche rapidly reach the p+ contact taking no part in the process but the electrons are released into n region where they do not combine which either donor or holes. esparkz.in The electron drift at their maximum velocity across the n region and current continuous to flow in the external circuit which they are in transit. When this current pulse actually arrives at the cathode terminal, the A.C voltage is at its negative peak and the second delay of 90 degree has taken place. This time depends upon the velocity and the thickness of the highly doped n+ layer. esparkz.in Practical consideration S/C Si,Ge,GaAs,InP Si-cheaper, easy to fabricate GaAs-lower noise, high efficiencies, high operating freq. operating freq. esparkz.in TRAPATT A pn junction diode, similar to the IMPATT diode, but characterized by the formation of a trapped space-charge plasma within the junction region; used in the generation and amplification of microwave power. Derived from trapped plasma avalanche transit time diode. esparkz.in IMPATT diode mounted on coaxial cavity a short circuit half wavelength away from the diode oscillations begins. RF field increases RF field increases Plasma of electrons and holes is generated due to avalanche action so that a large potential across the junction which opposes applied AC field. esparkz.in Total voltage is reduced Current pulses trapped behind it. Much slower drift velocity so longer transit time so that for a given thickness operating frequency is much lower lower When current pulses does arrive at cathode, the diode voltage is much lower than IMPATT diode, dissipation is much lower, efficiency much higher. Operation similar to class-c, pulsed operation than CW operation esparkz.in n + -p-p + esparkz.in Drift velocity of TRAPATT diode much less than IMPATT diode , so Either operating frequency must be lower Or active region must be made thinner Or active region must be made thinner <10GHz TRAPATT pulse is rich in harmonics, amplifiers or oscillators can be designed to tune this frequencies.( X band) esparkz.in PAGE 6,7 D/TRAPATT esparkz.in e s p a r k z . i n Gunn diode- Tunnel diode esparkz.in