85HF(R) Series

Vishay Semiconductors

Standard Recovery Diodes, (Stud Version), 85 A

FEATURES
High surge current capability Stud cathode and stud anode version Leaded version available Types up to 1600 V VRRM Compliant to RoHS directive 2002/95/EC Designed and qualified for industrial level

TYPICAL APPLICATIONS
DO-203AB (DO-5)

Battery chargers Converters Power supplies

85 A

PRODUCT SUMMARY
IF(AV)

Machine tool controls Welding

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS 85HF(R) 10 TO 120 85 TC 50 Hz 60 Hz 50 Hz 60 Hz Range 100 to 1200 - 65 to 180 140 133 1700 1800 14 500 13 500 1400/1600 - 65 to 150 110 140/160 UNITS A C A A

IF(AV) IF(RMS) IFSM I2 t VRRM TJ

A2s V C

ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS

TYPE NUMBER VOLTAGE CODE 10 20 40 60 85HF(R) 80 100 120 140 160 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 100 200 400 600 800 1000 1200 1400 1600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 200 300 500 700 900 1100 1300 1500 1700 4.5 9 IRRM MAXIMUM AT TJ = TJ MAXIMUM mA

Document Number: 93529 Revision: 25-May-09

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85HF(R) Series
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER Maximum average forward current at case temperature Maximum RMS forward current SYMBOL IF(AV) IF(RMS) t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Value of threshold voltage (up to 1200 V) Value of threshold voltage (for 1400 V, 1600 V) Value of forward slope resistance (up to 1200 V) Value of forward slope resistance (for 1400 V, 1600 V) Maximum forward voltage drop I2t No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied TEST CONDITIONS 180 conduction, half sine wave 85HF(R) 10 to 120 85 140 133 1700 1800 1450 Sinusoidal half wave, initial TJ = TJ maximum 1500 14 500 13 500 10 500 9400 16 000 0.68 VF(TO) TJ = TJ maximum 0.69 1.62 rf TJ = TJ maximum 1.75 VFM Ipk = 267 A, TJ = 25 C, tp = 400 s rectangular wave 1.2 1.4 V m V A2s A2s A 110 140/160 UNITS A C A

Standard Recovery Diodes, (Stud Version), 85 A

t = 0.1 ms to 10 ms, no voltage reapplied

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER Maximum junction operating and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink Maximum shock (1) Maximum constant vibration
(1) (1)

SYMBOL TJ, TStg RthJC RthCS DC operation

TEST CONDITIONS

85HF(R) 10 to 120 - 65 to 180 140/160 - 65 to 150

UNITS C

0.35 K/W 0.25 1500

Mounting surface, smooth, flat and greased

50 Hz Stud outwards Not lubricated thread, tighting on nut (2) Lubricated thread, tighting on nut (2) Not lubricated thread, tighting on hexagon (3) Lubricated thread, tighting on hexagon (3)

20 5000 3.4 (30) 2.3 (20) 4.2 (37) 3.2 (28) 17 0.6 DO-203AB (DO-5)

Maximum constant acceleration Maximum allowable mounting torque (+ 0 %, - 10 %)

Nm (lbf in)

Approximate weight Case style Notes (1) Available only for 88HF (2) Recommended for pass-through holes (3) Recommended for holed threaded heatsinks www.vishay.com 2

Unleaded device See dimensions - link at the end of datasheet

g oz.

For technical questions, contact: [email protected]

Document Number: 93529 Revision: 25-May-09

85HF(R) Series
Standard Recovery Diodes, (Stud Version), 85 A
RthJC CONDUCTION
CONDUCTION ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION 0.10 0.11 0.13 0.17 0.26 RECTANGULAR CONDUCTION 0.08 0.11 0.13 0.17 0.26 TJ = TJ maximum K/W TEST CONDITIONS UNITS

Vishay Semiconductors

Note The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

Maximum Allowable Case Temperature (C)

Maximum Allowable Case Temperature (C)

180 170 160 150

85HF(R) Series (100V to 1200V) RthJC (DC) = 0.35 K/W

150

85HF(R) Series (1400V to 1600V) RthJC (DC) = 0.35 K/W

140
Conduction Angle

Conduction Angle

130

120

30

140 130

60

30
110

90 120 180a

60

90

120 180

100

0 10 20 30 40 50 60 70 80 90 100
Average Forward Current (A)

0 10 20 30 40 50 60 70 80 90 100
Average Forward Current (A)

Fig. 1 - Current Ratings Characteristics

Fig. 3 - Current Ratings Characteristics

Maximum Allowable Case Temperature (C)

85HF(R) Series (100V to 1200V) RthJC (DC) = 0.35 K/W

Maximum Allowable Case Temperature (C)

180 170 160 150

150
85HF(R) Series (1400V to 1600V) RthJC (DC) = 0.35 K/W

140 130 120

30
Conduction Period

Conduction Period

30

140 130 0 20

60

90 120 180 DC

110 100 0 20

60

90 120 180 DC

40

60

80

100 120 140

40

60

80

100 120 140

Average Forward Current (A)

Average Forward Current (A)

Fig. 2 - Current Ratings Characteristics

Fig. 4 - Current Ratings Characteristics

Document Number: 93529 Revision: 25-May-09

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85HF(R) Series
Vishay Semiconductors
90 80 70 60 50 40 30 20 10 0 0
0 20 40 60 80 100 120 140 160 180 10 20 30 40 50 60 70 80 90
Average Forward Current (A) Maximum Allowable Ambient Temperature (C)

Standard Recovery Diodes, (Stud Version), 85 A

180 120 90 60 30
1K

Maximum Average Forward Power Loss (W)

0.7

Rth

1.
2K
3K

/W
W

SA

K/W

K/

=0

/W

.5 K /W -D

RMS Limit

/W

elta R

Conduction Angle 85HF(R) Series (100V to 1200V) Tj = 180C

5 K/

W
W

10 K/

Fig. 5 - Forward Power Loss Characteristics

Maximum Average Forward Power Loss (W)

120 100 80

DC 180 120 90 60 30

0.7
1 K/ W
1.5
2K
3K
Conduction Period 85HF(R) Series (100V to 1200V) Tj = 180C

Rt hS A= 0.5
W

K/

K/

K/ W

-D

/W

elt aR

60 RMS Limit 40 20 0 0 20 40 60 80

/W

5 K/W
1 0 K /W

0 20 40 60 80 100 120 140 160 180 100 120 140

Maximum Allowable Ambient Temperature (C)

Average Forward Current (A)

Fig. 6 - Forward Power Loss Characteristics

Maximum Average Forward Power Loss (W)

100 90 80 70 60 50 40 30 20 10 0 0

180 120 90 60 30

0.7 K/
W

Rt

1
1.5
2K

hS

K/
W

A= 0.5

K/

K /W -D

RMS Limit

/W
/W

elt aR

3K

Conduction Angle 85HF(R) Series (1400V, 1600V) Tj = 150C

5 K/W
1 0 K /W

10 20 30 40 50 60 70 80 90 0
Average Forward Current (A)

25

50

75

100

125

150

Maximum Allowable Ambient Temperature (C)

Fig. 7 - Forward Power Loss Characteristics

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For technical questions, contact: [email protected]

Document Number: 93529 Revision: 25-May-09

85HF(R) Series
Standard Recovery Diodes, (Stud Version), 85 A
Maximum Average Forward Power Loss (W)

Vishay Semiconductors

140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 0

25 50 75 100 125 150
Average Forward Current (A) Maximum Allowable Ambient Temperature (C)

DC 180 120 90 60 30

Rt hS A =
W K/

0.7
1K
1.5

0. 5 K/

/W

W -D elt

RMS Limit Conduction Period 85HF(R) Series (1400V, 1600V) Tj = 150C

2K

K/W /W

a R

3 K/W 5 K/W
1 0 K /W

Fig. 8 - Forward Power Loss Characteristics

1600
Peak Half Sine Wave Forward Current (A)

1400 1200 1000 800 600 400 1

Instantaneous Forward Current (A)

At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = Tj Max. @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s

10000
Tj = 25C Tj = Tj Max.

1000

100
85HF(R) Series up to 1200V

85HF(R) Series

10
10 100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Instantaneous Forward Voltage (V)

Fig. 9 - Maximum Non-Repetitive Surge Current

Fig. 11 - Forward Voltage Drop Characteristics (up to 1200 V)

1800
Peak Half Sine Wave Forward Current (A)

Instantaneous Forward Current (A)

Maximum Non Repetitive Surge Current Versus Pulse Train Duration. 1600 Initial Tj = Tj Max. No Voltage Reapplied 1400 Rated Vrrm Reapplied

1000
Tj = Tj Max.

1200 1000 800 600 400

85HF(R) Series

100

Tj = 25C

10
88HF (R) Series

200 0.01

1
0.1
Pulse Train Duration (s)

0.5

1.5

2.5

Instantaneous Forward Voltage (V)

Fig. 10 - Maximum Non-Repetitive Surge Current

Fig. 12 - Forward Voltage Drop Characteristics (for 1400 V, 1600 V)

Document Number: 93529 Revision: 25-May-09

For technical questions, contact: [email protected]

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85HF(R) Series
Vishay Semiconductors
10
Steady State Value RthJC = 0.35 K/W (DC Operation)

Standard Recovery Diodes, (Stud Version), 85 A

Transient Thermal Impedance Z thJC (K/W)

0.1

0.01
85HF(R) Series

0.001 0.0001 0.001

0.01

0.1

10

Square Wave Pulse Duration (s)

Fig. 13 - Thermal Impedance ZthJC Characteristics

ORDERING INFORMATION TABLE

Device code

85
1
1

HF
2 -

R
3

160
4

M
5

85 = Standard device 86 = Not isolated lead 87 = Isolated lead with silicone sleeve (red = Reverse polarity) (blue = Normal polarity) 88 = Type for rotating application

2 3 4 5

HF = Standard diode None = Stud normal polarity (cathode to stud) R = Stud reverse polarity (anode to stud) Voltage code x 10 = VRRM (see Voltage Ratings table) None = Stud base DO-203AB (DO-5) 1/4" 28UNF-2A M = Stud base DO-203AB (DO-5) M6 x 1 (not available for 88HF)

LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95342

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For technical questions, contact: [email protected]

Document Number: 93529 Revision: 25-May-09

Outline Dimensions
Vishay Semiconductors

DO-203AB (DO-5) for 85HF(R) and 86HF(R) Series

DIMENSIONS FOR 85HF(R) SERIES in millimeters (inches)
15.1 (0.59) 6.1/7 (0.24/0.27)

4 (0.16)

4 (0.16) MIN. 25.4 (1) MAX. 10.8 (0.42) 11.4 (0.45)

11.1 0.4 (0.44 0.02)

1/4" 28UNF-2A for metric devices: M6 x 1

1.20 (0.04)

17.35 (0.68)

Document Number: 95342 Revision: 29-Sep-08

For technical questions, contact: [email protected]

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Outline Dimensions
Vishay Semiconductors
DO-203AB (DO-5) for 85HF(R) and 86HF(R) Series

DIMENSIONS FOR 86HF(R) SERIES in millimeters (inches)

12.2 (0.48) MAX.

7 (0.28) MAX.

134.4 (5.29) MAX.

123 (4.84) MAX.

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For technical questions, contact: [email protected]

Document Number: 95342 Revision: 29-Sep-08

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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishays knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customers responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customers technical experts. Product specifications do not expand or otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.

Revision: 02-Oct-12

Document Number: 91000