Datasheet JFET
Datasheet JFET
Datasheet JFET
t
High Slew Rate, Wide Bandwidth, JFET Input Operational Amplifiers
These devices are a new generation of high speed JFET input monolithic operational amplifiers. Innovative design concepts along with JFET technology provide wide gain bandwidth product and high slew rate. Wellmatched JFET input devices and advanced trim techniques ensure low input offset errors and bias currents. The all NPN output stage features large output voltage swing, no deadband crossover distortion, high capacitive drive capability, excellent phase and gain margins, low open loop output impedance, and symmetrical source/sink AC frequency response. This series of devices is available in fully compensated or decompensated (AVCL2) and is specified over a commercial temperature range. They are pin compatible with existing Industry standard operational amplifiers, and allow the designer to easily upgrade the performance of existing designs. Wide Gain Bandwidth: 8.0 MHz for Fully Compensated Devices Wide Gain Bandwidth: 16 MHz for Decompensated Devices High Slew Rate: 25 V/s for Fully Compensated Devices High Slew Rate: 50 V/s for Decompensated Devices High Input Impedance: 1012
8 1
8 1
PIN CONNECTIONS
Offset Null Inv. Input Noninv. Input VEE
1 2 3 4 + 8 7 6 5
Input Offset Voltage: 0.5 mV Maximum (Single Amplifier) Large Output Voltage Swing: 14.7 V to +14 V for Large Output Voltage Swing: VCC/VEE = 15 V Low Open Loop Output Impedance: 30 @ 1.0 MHz Low THD Distortion: 0.01% Excellent Phase/Gain Margins: 55/7.6 dB for Fully Compensated Devices ORDERING INFORMATION
TA = 0 to +70C
PIN CONNECTIONS
Output 1 Inputs 1
3 1 2 + + 16 15 14 13 + + 12 11 10 9
Output 1 Inputs 1
1 2 3 + +
Output 4 Inputs 4
13 12 11
VCC Inputs 2
4 5 6
VCC Inputs 2
4 5 6 + +
10 9 8
Output 2 NC
7 8
Output 2
NOTES: 1. Either or both input voltages must not exceed the magnitude of VCC or VEE. 2. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded.
D1 Inputs + + CC CF + Q5 Q2 Q9 500 50 A 500 Q10 R6 Q11 D4 RM 100 A 300 A R3 1.0 k R4 1.0 k D3 Q3 5.0 pF 20 pF J1 J2
R1 240
D2 CM 3.0 pF
Q8
Q4
R7 66 k VEE
ISC
NOTES: (continued) 3. Tlow = 0C for MC34080B Thigh = +70C for MC34080B 0C for MC34081B +70C for MC34081B 0C for MC34084 +70C for MC34084 0C for MC34085 +70C for MC34085 4. See application information for typical changes in input offset voltage due to solderability and temperature cycling. 5. Limits at TA = +25C are guaranteed by high temperature (Thigh) testing.
25
25
50
75
100
125
30 RL = 10 k 20 10 0
RL = 2.0 k
8.0 4.0 0 4.0 8.0 VIC, INPUT COMMON MODE VOLTAGE (V)
12
5.0
25
0.4
30 Sink 20
Source
0.8 2.0 1.0 VEE 0 300 3.0 k 30 k 300 k RL, LOAD RESISTANCE TO VCC () VCC/VEE = +15 V RL to VCC TA = 25C
10
0 55
60
60
40
40
AV = 1.0 AV = 10 1.0 M 10 M
f, FREQUENCY (Hz)
Figure 15. Open Loop Voltage Gain and Phase versus Frequency
Figure 16. Open Loop Voltage Gain and Phase versus Frequency
A VOL, OPEN LOOP VOLTAGE GAIN (dB) 20 100 10 VCC/VEE = 15 V 0 VO = 0 V TA = 25C Phase Margin 10 = 43 20 1 Gain, RL = 2.0 k 2 Gain, RL = 2.0 k, CL = 100 pF 30 3 Phase, RL = 2.0 k 4 Phase, RL = 2.0 k, CL = 100 pF Decompensated Units Only 40 1.0 2.0 3.0 5.0 7.0 10 f, FREQUENCY (Hz) Gain Margin = 5.5 dB , EXCESS PHASE (DEGREES) 120 140 160 180 200 20 30 50
1.10
1.00
0.90
0.80 55
25
25
50
75
100
125
PERCENT OVERSHOOT
20 0 10
10 k
1.20
CL = 10 pF
VCC/VEE = 15 V RL = 2.0 k to
1.00
0.80
0.60 55
25
25
50
75
100
125
0.2 s/Div
0.5 s/Div
MC34085 Transient Response AV = +2.0, RL = 2.0 k, VCC/VEE = 15 V, TA = 25C Figure 26. Small Signal
CL = 10 pF
0.2 s/Div
0.5 s/Div
5.0 mV/Div
50 mV/Div
5.0 mV/Div
50 mV/Div
TA = 25C TA = 125C
TA = 55C
VCC/VEE = 15 V VS = 3.0 V VO = 0 V
Compensated Units AV = +1.0 Decompensated Units AV = +2.0 100 1.0 k 10 k f, FREQUENCY (Hz) 100 k 1.0 M 10 M
1.0
10
0 0.1
1.0
10
100
Negative Supply
90
VCC VCC + VEE VEE
VCC/VEE = 15 V VS = 3.0 V VO = 0 V f 10 Hz
80
VO
70 55
25
25
50
75
100
125
0 10 k
10 M
100
10 k
100 k
10
VEE
11
B
1 4
NOTES: 1. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 2. PACKAGE CONTOUR OPTIONAL (ROUND OR SQUARE CORNERS). 3. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. DIM A B C D F G H J K L M N MILLIMETERS MIN MAX 9.40 10.16 6.10 6.60 3.94 4.45 0.38 0.51 1.02 1.78 2.54 BSC 0.76 1.27 0.20 0.30 2.92 3.43 7.62 BSC 10_ 0.76 1.01 INCHES MIN MAX 0.370 0.400 0.240 0.260 0.155 0.175 0.015 0.020 0.040 0.070 0.100 BSC 0.030 0.050 0.008 0.012 0.115 0.135 0.300 BSC 10_ 0.030 0.040
F
NOTE 2
A L
C T
SEATING PLANE
J N D K
M
G 0.13 (0.005) T A
M
D
5
E
1 4
0.25
h B C e A
SEATING PLANE
X 45 _
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS ARE IN MILLIMETERS. 3. DIMENSION D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE MOLD PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A A1 B C D E e H h L MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.35 0.49 0.18 0.25 4.80 5.00 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_
L 0.10 A1 0.25 B
M
C B
12
14
B
1 7
A F C N H G D
SEATING PLANE
J K M
B
1 8
8X
P 0.010 (0.25)
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.13 (0.005) TOTAL IN EXCESS OF D DIMENSION AT MAXIMUM MATERIAL CONDITION. MILLIMETERS MIN MAX 10.15 10.45 7.40 7.60 2.35 2.65 0.35 0.49 0.50 0.90 1.27 BSC 0.25 0.32 0.10 0.25 0_ 7_ 10.05 10.55 0.25 0.75 INCHES MIN MAX 0.400 0.411 0.292 0.299 0.093 0.104 0.014 0.019 0.020 0.035 0.050 BSC 0.010 0.012 0.004 0.009 0_ 7_ 0.395 0.415 0.010 0.029
16X
D
M
J T A
S
0.010 (0.25)
F R X 45 _ C T
14X
SEATING PLANE
DIM A B C D F G J K M P R
13
14
15
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16
*MC34080/D*
MC34080/D