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    IRF630 IRF630FP: N - CHANNEL 200V - 0.35 - 9A - TO-220/FP Mesh Overlay Mosfet

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    Alex Ore
    This power MOSFET is designed using he company's consolidated strip layout-based MESH OVERLAY(tm) process. This technology matches and improves the performances compared with standard parts from various sources. S HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC / DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.

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    IRF630 IRF630FP: N - CHANNEL 200V - 0.35 - 9A - TO-220/FP Mesh Overlay Mosfet

    Uploaded by

    Alex Ore
    283 views10 pages
    This power MOSFET is designed using he company's consolidated strip layout-based MESH OVERLAY(tm) process. This technology matches and improves the performances compared with standard parts from various sources. S HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC / DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.

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    irf360

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    This power MOSFET is designed using he company's consolidated strip layout-based MESH OVERLAY(tm) process. This technology matches and improves the performances compared with standard parts from various sources. S HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC / DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    283 views10 pages

    IRF630 IRF630FP: N - CHANNEL 200V - 0.35 - 9A - TO-220/FP Mesh Overlay Mosfet

    Uploaded by

    Alex Ore
    This power MOSFET is designed using he company's consolidated strip layout-based MESH OVERLAY(tm) process. This technology matches and improves the performances compared with standard parts from various sources. S HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC / DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 10

    IRF630 IRF630FP

    N - CHANNEL 200V - 0.35 - 9A - TO-220/FP MESH OVERLAY MOSFET

    TYPE IRF630 IRF630F P


    s s s s

    V DSS 200 V 200 V

    R DS(on) < 0.40 < 0.40

    ID 9 A 9 A

    TYPICAL RDS(on) = 0.35 EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
    3 1 2
    1 2 3

    DESCRIPTION This power MOSFET is designed using he companys consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.

    TO-220

    TO-220FP

    APPLICATIONS s HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.

    INTERNAL SCHEMATIC DIAGRAM

    ABSOLUTE MAXIMUM RATINGS


    Symbol V DS V DGR V GS ID ID I DM ( ) P tot dv/dt( 1) V ISO Ts tg Tj Parameter IRF630 Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k ) G ate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating Factor Peak Diode Recovery voltage slope Insulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
    o

    Value IRF630F P 200 200 20 9 5.7 36 75 0.6 5 -65 to 150 150 9(**) 5.7(**) 36 25 0.20 5 2000

    Un it V V V A A A W W /o C V/ns V
    o o

    C C

    () Pulse width limited by safe operating area ( 1) ISD 9A, di/dt 300 A/s, VDD V(BR)DSS, Tj TJMAX First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet (**) Limited only by Maximum Temperature Allowed

    February 1999

    1/9

    IRF630/FP
    THERMAL DATA
    TO-220 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 1.67 62.5 0.5 300 TO-220FP 4.17
    o o o

    C/W C/W C/W o C

    Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose

    AVALANCHE CHARACTERISTICS
    Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 50 V) Max Value 9 160 Unit A mJ

    ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF


    Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 A V GS = 0 Min. 200 1 50 100 Typ. Max. Unit V A A nA

    V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = 20 V

    T c = 125 oC

    ON ()
    Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10V Test Con ditions ID = 250 A ID = 5 A 10 Min. 2 Typ. 3 0.35 Max. 4 0.40 Unit V A

    V DS > ID(o n) x R DS(on )ma x V GS = 10 V

    DYNAMIC
    Symbo l g f s ( ) C iss C os s C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Con ditions V DS > ID(o n) x R DS(on )ma x V DS = 25 V f = 1 MHz ID = 5 A V GS = 0 Min. 3 Typ. 4 540 90 35 700 120 50 Max. Unit S pF pF pF

    2/9

    IRF630/FP
    ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
    Symbo l t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total G ate Charge Gate-Source Charge Gate-Drain Charge Test Con ditions V DD = 100 V I D = 4.5 A R G = 4.7 V GS = 10 V (see test circuit, figure 3) V DD = 160 V ID = 9 A VGS = 10 V Min. Typ. 10 15 31 7.5 9 Max. 14 20 45 Unit ns ns nC nC nC

    SWITCHING OFF
    Symbo l tr (Voff) tf tc Parameter Off-voltage Rise T ime Fall T ime Cross-over Time Test Con ditions V DD = 160 V I D = 9 A R G = 4.7 VGS = 10 V (see test circuit, figure 5) Min. Typ. 12 12 25 Max. 17 17 35 Unit ns ns ns

    SOURCE DRAIN DIODE


    Symbo l ISD I SDM ( ) V SD ( ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 9 A V GS = 0 170 0.95 11 I SD = 9 A di/dt = 100 A/ s o Tj = 150 C V DD = 50 V (see test circuit, figure 5) Test Con ditions Min. Typ. Max. 9 36 1.5 Unit A A V ns C A

    () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % () Pulse width limited by safe operating area

    Safe Operating Area for TO-220

    Safe Operating Area for TO-220FP

    3/9

    IRF630/FP
    Thermal Impedance for TO-220 Thermal Impedance for TO-220FP

    Output Characteristics

    Transfer Characteristics

    Transconductance

    Static Drain-source On Resistance

    4/9

    IRF630/FP
    Gate Charge vs Gate-source Voltage Capacitance Variations

    Normalized Gate Threshold Voltage vs Temperature

    Normalized On Resistance vs Temperature

    Source-drain Diode Forward Characteristics

    5/9

    IRF630/FP
    Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

    Fig. 3: Switching Times Test Circuits For Resistive Load

    Fig. 4: Gate Charge test Circuit

    Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times

    6/9

    IRF630/FP

    TO-220 MECHANICAL DATA


    DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147
    E

    mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40

    inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151

    D1

    L2 F1

    G1

    Dia. F2 F

    L5 L7 L6

    L9

    L4

    H2

    P011C

    7/9

    IRF630/FP

    TO-220FP MECHANICAL DATA


    DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409

    L3 L6 L7 F1 F

    G1

    F2

    1 2 3 L2 L4

    8/9

    IRF630/FP

    Information furnished is believed to be accurate and reliable. However, STMicroelect ronics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third part ies which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectro nics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all informat ion previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysi a - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com .

    9/9

    This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

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