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    BD136

    Uploaded by

    Cristian Monsalves

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    BD136

    Uploaded by

    Cristian Monsalves
    176 views4 pages

    Copyright

    © Attribution Non-Commercial (BY-NC)

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    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    176 views4 pages

    BD136

    Uploaded by

    Cristian Monsalves

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    BD136 BD138/BD140

    PNP SILICON TRANSISTOR


    n

    SGS-THOMSON PREFERRED SALESTYPES

    DESCRIPTION The BD136, BD138 and BD140 are silicon epitaxial planar PNP transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi compementary circuits. The complementary NPN types are the BD135 BD137 and BD139. SOT-32

    INTERNAL SCHEMATIC DIAGRAM

    ABSOLUTE MAXIMUM RATINGS


    Symb ol V CBO V CEO V EBO IC I CM IB P tot P tot T s tg Tj Parameter BD136 Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current T otal Dissipation at Tc 25 C T otal Dissipation at Tamb 25 C Storage T emperature Max. Operating Junction T emperature
    o o

    Valu e BD138 -60 -60 -5 -1.5 -3 -0.5 12.5 1.25 -65 to 150 150 BD140 -80 -80 -45 -45

    Unit V V V A A A W W
    o o

    C C

    October 1995

    1/4

    BD136/BD138/BD140
    THERMAL DATA
    R thj -ca se Thermal Resistance Junction-case Max 10
    o

    C/W

    ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)


    Symbo l I CBO I EBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut- off Current (I C = 0) T est Con ditio ns V CB = -30 V V CB = -30 V V EB = -5 V I C = -30 mA for BD136 for BD138 for BD140 I C = -0.5 A I C = -0.5 A I C = -5 mA I C = -0.5 A I C = -150 mA IB = -0.05 A VCE = -2 V V CE = -2 V VCE = -2 V VCE = -2 V 25 25 40 63 TC = 125 oC Min . T yp. Max. -0.1 -10 -10 Unit A A A

    V CEO(sus) Collector-Emitter Sustaining Voltage

    -45 -60 -80 -0.5 -1

    V V V V V

    V CE(sat) V BE h FE

    Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain

    250 160

    h FE

    h FE Groups

    I C = -150 mA V CE = -2 V for BD140 group 10

    Pulsed: Pulse duration = 300 s, duty cycle 1.5 %

    2/4

    BD136/BD138/BD140

    SOT-32 MECHANICAL DATA


    mm MIN. A B b b1 C c1 D e e3 F G H 3 7.4 10.5 0.7 0.49 2.4 1.2 15.7 2.2 4.4 3.8 3.2 2.54 0.118 TYP. MAX. 7.8 10.8 0.9 0.75 2.7 MIN. 0.291 0.413 0.028 0.019 0.04 0.047 0.618 0.087 0.173 0.150 0.126 0.100 inch TYP. MAX. 0.307 0.445 0.035 0.030 0.106

    DIM.

    0016114

    3/4

    BD136/BD138/BD140

    Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequence s of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede s and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A .

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