Chapter 4

Physics of Bipolar Transistors

4.1 General Considerations 4.2 Structure of Bipolar Transistor 4.3 Operation of Bipolar Transistor in Active Mode 4.4 Bipolar Transistor Models 4.5 Operation of Bipolar Transistor in Saturation Mode 4.6 The PNP Transistor
1

Bipolar Junction Transistor (BJT)

Bipolar Junction Transistor invented in 1945 (Bell Lab.) Based on pn junction theory in Ch.2, study the physics of BJT, derive I-V characteristics and develop large and small signal equivalent models.

CH4

Physics of Bipolar Transistors

General Considerations: Voltage-Dependent Current Source

AV =

Vout = KRL Vin

A voltage-dependent current source can act as an amplifier. If KRL is greater than 1, then the signal is amplified.
CH4 Physics of Bipolar Transistors 3

Voltage-Dependent Current Source with Input Resistance

Regardless of the input resistance, the magnitude of amplification remains unchanged.

CH4 Physics of Bipolar Transistors 4

Exponential Voltage-Dependent Current Source

A three-terminal exponential voltage-dependent current source is shown above. Ideally, bipolar transistor can be modeled as such.
CH4 Physics of Bipolar Transistors 5

Structure and Symbol of Bipolar Transistor

Bipolar (junction) transistor can be thought of as a sandwich of three doped Si regions. The outer two regions are doped with the same polarity, while the middle region is doped with opposite polarity.
CH4 Physics of Bipolar Transistors 6

Injection of Carriers

Reverse biased PN junction creates a large electric field that sweeps any injected minority carriers to their majority region. This ability proves essential in the proper operation of a bipolar transistor.
CH4 Physics of Bipolar Transistors 7

Forward Active Region

Forward active region: VBE > 0, VBC < 0. Figure b) presents a wrong way of modeling figure a).
CH4 Physics of Bipolar Transistors 8

Accurate Bipolar Representation

Collector also carries current due to carrier injection from base.

CH4 Physics of Bipolar Transistors 9

Carrier Transport in Base

CH4

Physics of Bipolar Transistors

10

Collector Current

AE qDn ni2 VBE IC = 1 exp N EWB VT VBE I C = I S exp VT AE qDn ni2 IS = N EWB
Applying the law of diffusion, we can determine the charge flow across the base region into the collector. The equation above shows that the transistor is indeed a voltage-controlled element, thus a good candidate as an amplifier.
CH4 Physics of Bipolar Transistors 11

Parallel Combination of Transistors

When two transistors are put in parallel and experience the same potential across all three terminals, they can be thought of as a single transistor with twice the emitter area.
CH4 Physics of Bipolar Transistors 12

Simple Transistor Configuration

Although a transistor is a voltage to current converter, output voltage can be obtained by inserting a load resistor at the output and allowing the controlled current to pass thru it. Vout = 3 - ICRL
CH4 Physics of Bipolar Transistors 13

Constant Current Source

Ideally, the collector current does not depend on the collector to emitter voltage. This property allows the transistor to behave as a constant current source when its base-emitter voltage is fixed.
CH4 Physics of Bipolar Transistors 14

Base Current

I C = I B
Base current consists of two components: 1) Reverse injection of holes into the emitter and 2) recombination of holes with electrons coming from the emitter.
CH4 Physics of Bipolar Transistors 15

Emitter Current

I E = IC + I B 1 I E = I C 1 + IC = IB

Applying Kirchoffs current law to the transistor, we can easily find the emitter current.
CH4 Physics of Bipolar Transistors 16

Summary of Currents

IC IB

VBE = I S exp VT 1

VBE = I S exp VT

+1 VBE I S exp IE = VT = +1

CH4

Physics of Bipolar Transistors

17

Bipolar Transistor Large Signal Model

A diode is placed between base and emitter and a voltage controlled current source is placed between the collector and emitter.
CH4 Physics of Bipolar Transistors 18

Example: Maximum RL

IC= 1.153 mA and VBE=0.8 V As RL increases, Vx drops and eventually forward biases the collector-base junction. This will force the transistor out of forward active region. Therefore, there exists a maximum tolerable collector resistance.
CH4 Physics of Bipolar Transistors 19

I/V Characteristics of Bipolar Transistor

CH4

Physics of Bipolar Transistors

20

Example: IV Characteristics

CH4

Physics of Bipolar Transistors

21

Transconductance

d VBE gm = I S exp dVBE VT 1 VBE g m = I S exp VT VT IC gm = VT

A voltage-dependent current source (in the active-mode) Transconductance, gm shows a measure of how well the transistor converts voltage to current. It will later be shown that gm is one of the most important parameters in circuit design.
CH4 Physics of Bipolar Transistors 22

Visualization of Transconductance

gm can be visualized as the slope of IC versus VBE. A large IC has a large slope and therefore a large gm.
CH4 Physics of Bipolar Transistors 23

Transconductance and Area

When the area of a transistor is increased by n, IS increases by n. For a constant VBE, IC and hence gm increases by a factor of n.
CH4 Physics of Bipolar Transistors 24

Transconductance and Ic

The figure above shows that for a given VBE swing, the current excursion around IC2 is larger than it would be around IC1. This is because gm is larger IC2.
CH4 Physics of Bipolar Transistors 25

Small-Signal Model: Derivation

Small signal model is derived by perturbing voltage difference every two terminals while fixing the third terminal and analyzing the change in current of all three terminals. We then represent these changes with controlled sources or resistors.
CH4 Physics of Bipolar Transistors 26

Small-Signal Model: VBE Change

CH4

Physics of Bipolar Transistors

27

Small-Signal Model: VCE Change

Ideally, VCE has no effect on the collector current. Thus, it will not contribute to the small signal model. It can be shown that VCB has no effect on the small signal model, either.
CH4 Physics of Bipolar Transistors 28

Small Signal Example I

IC 1 gm = = VT 3.75 r =

gm

= 375

Here, small signal parameters are calculated from DC operating point and are used to calculate the change in collector current due to a change in VBE.
CH4 Physics of Bipolar Transistors 29

Small Signal Example II

In this example, a resistor is placed between the power supply and collector, therefore, providing an output voltage.
CH4 Physics of Bipolar Transistors 30

AC Ground

Since the power supply voltage does not vary with time, it is regarded as a ground in small-signal analysis.

CH4

Physics of Bipolar Transistors

31

Early Effect

The claim that collector current does not depend on VCE is not accurate. As VCE increases, the depletion region between base and collector increases. Therefore, the effective base width decreases, which leads to an increase in the collector current.
CH4 Physics of Bipolar Transistors 32

Early Effect Illustration

With Early effect, collector current becomes larger than usual and a function of VCE.
CH4 Physics of Bipolar Transistors 33

Early Effect Representation

CH4

Physics of Bipolar Transistors

34

Early Effect and Large-Signal Model

Early effect can be accounted for in large-signal model by simply changing the collector current with a correction factor. In this mode, base current does not change.
CH4 Physics of Bipolar Transistors 35

Early Effect and Small-Signal Model

VCE VA VA ro = = I C I exp VBE I C S VT

CH4 Physics of Bipolar Transistors 36

Summary of Ideas

CH4

Physics of Bipolar Transistors

37

Bipolar Transistor in Saturation

When collector voltage drops below base voltage and forward biases the collector-base junction, base current increases and decreases the current gain factor, .
CH4 Physics of Bipolar Transistors 38

Large-Signal Model for Saturation Region

CH4

Physics of Bipolar Transistors

39

Overall I/V Characteristics

The speed of the BJT also drops in saturation.

CH4 Physics of Bipolar Transistors 40

Example: Acceptable VCC Region

VCC I C RC + (VBE 400mV )

In order to keep BJT at least in soft saturation region, the collector voltage must not fall below the base voltage by more than 400mV. A linear relationship can be derived for VCC and RC and an acceptable region can be chosen.
CH4 Physics of Bipolar Transistors 41

Deep Saturation

In deep saturation region, the transistor loses its voltagecontrolled current capability and VCE becomes constant. VCE,sat = 0.2 V
CH4 Physics of Bipolar Transistors 42

PNP Transistor

With the polarities of emitter, collector, and base reversed, a PNP transistor is formed. All the principles that applied to NPN's also apply to PNPs, with the exception that emitter is at a higher potential than base and base at a higher potential than collector.
CH4 Physics of Bipolar Transistors 43

A Comparison between NPN and PNP Transistors

The figure above summarizes the direction of current flow and operation regions for both the NPN and PNP BJTs.
CH4 Physics of Bipolar Transistors 44

PNP Equations

VEB I C = I S exp VT IB =

+1 V IE = I S exp EB VT
Early Effect
VEB VEC I C = I S exp 1 + VT VA

IS

exp

VEB VT

CH4

Physics of Bipolar Transistors

45

Large Signal Model for PNP

CH4

Physics of Bipolar Transistors

46

PNP Biasing

Note that the emitter is at a higher potential than both the base and collector. PNP ~ 50 (<< NPN ), Vx= 0.922 V for IS= 2x10-16 A
CH4 Physics of Bipolar Transistors 47

Small Signal Analysis

CH4

Physics of Bipolar Transistors

48

Small-Signal Model for PNP Transistor

The small signal model for PNP transistor is exactly IDENTICAL to that of NPN. This is not a mistake because the current direction is taken care of by the polarity of VBE.
CH4 Physics of Bipolar Transistors 49

Small-Signal Model for Diode-Connected Transistor

Fig. 4.44 NPN and PNP Diode-Connected Transitors Small-signal impedance of ~ 1/gm

CH4

Physics of Bipolar Transistors

50

Small Signal Model Example I

CH4

Physics of Bipolar Transistors

51

Small Signal Model Example II

Small-signal model is identical to the previous ones.

CH4 Physics of Bipolar Transistors 52

Small Signal Model Example III

Since during small-signal analysis, a constant voltage supply is considered to be AC ground, the final small-signal model is identical to the previous two.
CH4 Physics of Bipolar Transistors 53

Small Signal Model Example IV

CH4

Physics of Bipolar Transistors

54