ENS 205 Materials Science, Final Exam

19/01/2011

Name: __________________________________________________________________________
You have a total of 180 minutes. The exam is 8 pages long. Make sure you have all pages. Do not separate pages of the exam; exams with missing pages will not be marked. You may use scientific calculators. You may not use phones or any other gadgets; your phones should not be visible, or we will collect them. Even the slightest attempt at copying will be reported to the Deans office. Answer all questions in English! total points 10 10 10 10 10 10 10 10 10 10 20 120 your points

Q1 Q2 Q3 Q4 Q5 Q6 Q7 Q8 Q9 Q10 Bonus Total

1. (a) One crystalline form of silica (SiO2) has a cubic unit cell, and from x-ray diffraction data, it is known that the cell edge is 0.700 nm. If the measured density is 2.32 g/cm3, how many Si4+ and O2- ions are there per unit cell?

(b) What are the indices for the directions indicated by the vector in the sketch below?

(c) Determine the Miller indices for the planes shown in the following unit cell:

ENS 205 Materials Science, Final Exam

19/01/2011

Name: __________________________________________________________________________
2. Figure shows the first five peaks of the x-ray diffraction pattern for tungsten, which has a BCC crystal structure; radiation having a wavelength of 0.1542 nm was used. (a) Give h,k,l indices for each of these peaks (b) Determine the interplanar spacing for each of the peaks (c) For each peak, determine the atomic radius for tungsten and give reasons as to why the values are different, if they are. Reminder: in BCC crystals, diffraction only occurs for h+k+l = even number

ENS 205 Materials Science, Final Exam

19/01/2011

Name: __________________________________________________________________________
3. Atomic radius, crystal structure, electronegativity, and the most common valence are given in the table for several elements; for those that are nonmetals, only atomic radii are indicated. Give one example of an element you would expect to form the following with nickel: (a) A substitutional solid solution having complete solubility (b) A substitutional solid solution of incomplete solubility (c) An interstitial solid solution Give your reason!

4. A sheet of BCC iron 2 mm thick was exposed to a carburizing gas atmosphere on one side and a decarburizing atmosphere on the other side at 725C. After having reached steady state, the iron was quickly cooled to room temperature. The carbon concentrations at the two surfaces of the sheet were determined to be 0.012 and 0.0075 weight%. Compute the diffusion coefficient if the diffusion flux is 1.6 10 8 kg/m2-s. Hint: First convert the concentrations from weight percent to kilograms of carbon per cubic meter of iron. Data: density of carbon 2.25 g/cm3; density of iron 7.87 g/cm3

ENS 205 Materials Science, Final Exam

19/01/2011

Name: __________________________________________________________________________
5. A cylindrical specimen of stainless steel having a diameter of 12.8 mm and a gauge length of 50.800 mm is pulled in tension. The true stress-strain data for the specimen is shown. (a) Compute the modulus of elasticity. (b) Determine the yield strength. (c) Determine the tensile strength of this alloy. (d) What is the approximate ductility, in percent elongation? (e) What is the resilience (elastic energy stored)?

6. Consider a metal single crystal oriented such that the normal to the slip plane and the slip direction are at angles of 60 and 35, respectively, with the tensile axis. (a) Sketch the test situation, showing the sample and pulling direction. Label the two angles mentioned above. (b) If the critical resolved shear stress is 6.2 MPa, will an applied stress of 12 MPa cause the single crystal to yield? If not, what stress will be necessary?

7. (a) The room-temperature electrical conductivity of a semiconductor specimen is 1.2 10 -3 (-m)1. The hole concentration is known to be 1.0 1023 m3. The electron and hole mobilities for this material are 0.14 and 0.05 m2/V-s, respectively. Compute the electron concentration. (b) On the basis of the result in part (a), is the specimen intrinsic, n-type extrinsic, or p-type extrinsic.

ENS 205 Materials Science, Final Exam

19/01/2011

Name: __________________________________________________________________________
8. Is it possible to have a magnesiumlead alloy in which the mass fractions of primary and total are 0.60 and 0.85, respectively, at 460C? Why or why not? The phase diagram is provided.

9. (a) In the solidification process, the first step is the nucleation of grains. For homogeneous nucleation, one must form the initial nucleates, and reinforce them via diffusion of new atoms onto the nucleate. In the figure below, the temperature dependence on nucleation rate is shown for the two processes mentioned above, as well as their net effect. Correctly label in the boxes drawn. (b) Once a stable nucleate is formed, additional atoms must also diffuse towards it to grow the grain. For a system where the activation energy for diffusion of atoms is low, do you expect the temperature at which the maximum rate is observed to be increased or decreased? Explain by sketching on the figure a representative growth rate curve, and the resulting overall transformation rate curve. Label clearly for full marks.

ENS 205 Materials Science, Final Exam

19/01/2011

Name: __________________________________________________________________________
10. Isothermal transformation diagram for a 1.13 weight % C ironshown below (same figure is reproduced four times; the Fe-C phase diagram is shown on the right for your convenience.)
A: austenite; B: bainite; C: proeutectoid cementite; M: martensite; P: pearlite.

carbon alloy is

Sketch and label timetemperature paths to produce the following microstructures: (a) 6.2% proeutectoid cementite and 93.8% coarse pearlite (b) 50% fine pearlite and 50% bainite (c) 100% martensite (d) 100% tempered martensite

ENS 205 Materials Science, Final Exam

19/01/2011

Name: __________________________________________________________________________
Bonus question. The net potential energy between two adjacent ions, UN, may be represented by the sum of repulsive and attractive energies as follows, with possible values of the exponent n in the range 7-9:

(a) Sketch the form of this equation. On your sketch, show the point at which the interionic distance is most likely to occur. (b) Consider a hypothetical Q+P- ion pair for which the constants are A=1.93 eV-nm and B=8.9310-6 eV-nm8. Given that for this ion pair, the exponent n in the equation has a value of 8, find the inter-ionic spacing, and the bonding energy at that value of the distance. (c) The above equation is also valid for the bonding energy between adjacent ions in solid material. As a reminder, the modulus of elasticity, E, is the slope of the force separation curve at the equilibrium inter-ionic separation:

where C is a constant. Also note that the force is the negative derivative of the potential. In the table below, you are given the data for three hypothetical materials X, Y, Z. Rank their magnitudes of the moduli of elasticity from the greatest to the least. Show all your calculations and provide numbers. Material A B n 1.5 eV-nm 7.010-6 eV-nm8 8 X 2.0 eV-nm 1.010-5 eV-nm9 9 Y 3.5 eV-nm 4.010-6 eV-nm7 7 Z

ENS 205 Materials Science, Final Exam

19/01/2011

Name: __________________________________________________________________________ Formula Sheet

D= b/

D D0eQ / RT

Chapter 13 Fermi function: electrical conductivity: in intrinsic semiconductors:

; the value of e is 1.602 10-19 C