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GATE MODEL QUTI ON PAPER ( ECE)
1.The elect ron and hol e concent rat i ons in an int rinsic semi conduct or are ni per cm3 at 300k.Now, if accept or impurit i es are int roduced wit h a concent rat ion of Na per cm3( where Na> > ni) ,t he elect ron concent rat ion per cm3 at 300k will be a) ni c) ni+ Na b) Na-ni d) ni 2/ Na
2.I n a t rans conduct ance amplifier ,it i s desirable t o have a) a large input resist ance and a large out put resi st ance b) a large input resist ance and a smal l out put resi st ance c) a small input resist ance and a l arge out put resi st ance d) a small input r esist ance and a smal l out put resi st ance
3.The range of signed deci mal number t hat can be represent ed by 6 bit s 1s compl ement number is a) -31 t o + 31 b) -64 t o + 63 c) -63 t o + 64 d) -32 t o + 31
4.A mast er sl ave f lip-fl op has t he charact eri st ic t hat a) Change i n t he input immediat ely refl ect ed in t he out put b) Change i n t he out put occurs when t he st at e of mast er is affect ed c) Change i n t he out put occur when t he st at e of t he slave is affect ed d) Bot h t he mast er and t he slave st at es are affect ed at t he same l ine
5.The Fourier t ransform of a conj ugat e symmet ric funct i on is always a) imaginar y 0 Jobs Placement Preparation Career & Courses P3 Free Trial Go GATE-(2012)-Question-Paper-electronics-electrical-18494 http://placement.freshersworld.com/placement-papers/GATE-(2012)/Ques... 1 of 15 9/4/2012 6:02 PM C lic k t o b u y N O W ! P D F -XCHAN G E w w w .d o cu-trac k .c o m C lic k t o b u y N O W ! P D F -XCHAN G E w w w .d o cu-trac k .c o m b) Conj ugat e ant i-symmet ric c) real d) conj ugat e symmet ric
6.I f t he Laplace of t he signal y( t ) i s Y( s) = 1/ ( s( s-1) ) t hen i t s fi nal value is a) 1 b) 0 c) 1 d) Unbounded
7.A l inear syst em is equivalent ly represent ed by t wo set s of st at e equat ions. X= AX+ BU and W= CW+ DU The eigenvalues of t he represent at ions, are also comput ed as ( u)and ( ) .whi ch one of t he st at ement is t rue?
a) [ u] = [ ] and X= W b) [ u] = [ ] and X =W c) [ u] = [ ] and X= W d) [ u] = [ ] and X= W
8.I f t he closed l oop t ransfer funct i on of a cont rol syst em i s given as T(s)= ( s-5) / (( s+ 2) (s+ 3)) , t hen it is a) A unst able syst em b) An uncont roll able syst em c) A mini mum phase syst em d) A non-mi nimum phase syst em
9.The i nput t o a coherent det ect or is DSB-SC signal plus noise. The noi se at t he det ect or out put is a) The in-phase component b) The quadrat ur e-component c) Zero d) The envel ope
10.I n t he PCM syst em ,if t he code word l engt h i s increased from 6 t o 8 bi t es ,t he si gnal t o quant izat i on rat i o i mproves by t he fact or a) [ 8/ 6] b) 12 c) 16 d) 8
11.The dept h of penet rat ion of t he elect romagnet i c wave in a medium having conduct ivit y at a frequency of 1MHz is 25cm. t he dept h of penet rat i on of frequency of 4MHz wi ll be a) 6.25cm b) 12.50cm c) 50cm d) 100cm
12.A t ransmissi on line i s feeding 1 wat t of power t o horn ant enna having gai n of 10 db. The ant enna is mat ched t o t ransmi ssion l ine. The t ot al power radi at ed by horn ant enna t o free space is a) 10 wat t s b) 1 wat t s c) 0.1 wat t s d) 0.01 wat t s
13.Whi ch of t he foll owing is NOT associat ed wit h a p-n j unct ion? a) Junct ion capacit ance b) Charge st orage capacit ance c) Depl et ion capacit ance d) Channel lengt h modulat ion
14.For a hert z dipole ant enna ,t he half power beam widt h ( HPBW) i n t he E-plane i s a) 3600 GATE-(2012)-Question-Paper-electronics-electrical-18494 http://placement.freshersworld.com/placement-papers/GATE-(2012)/Ques... 2 of 15 9/4/2012 6:02 PM C lic k t o b u y N O W ! P D F -XCHAN G E w w w .d o cu-trac k .c o m C lic k t o b u y N O W ! P D F -XCHAN G E w w w .d o cu-trac k .c o m b) 1800 c) 900 d) 450
15.I n t he followi ng l i mit er circuit , an input volt age vi= 10si n100 nt is appli ed .assume t he di ode drop is 0.7v when it is forward bi ased .t he zener breakdown volt age i s 6.8v .t he maxi mum values of t he out put volt age i s 6.8v
a) 6.1v,-0.7v b) 0.7v,-7.5v c) 7.5v,-0.7v d) 7.5v,-7.5v
16.The syst em of linear equat ion 4x+ 2y= 7 2x+ y= 6 has a) A unique solut ion b) No solut i on c) An infi nit e number of solut i ons d) Exact ly t wo dist inct solut i ons
17.A sili con wafer has 100nm of oxi de on it and is insert ed i n a fur nace at a t emperat ure above 10000c for furt her oxi dat ion in dry oxygen rat e .t he oxidat i on rat e a) I s independent of current oxide t hi ckness and t emperat ure b) I s independent of current oxide t hi ckness but depends on t emperat ure c) slow down as t he oxi de grows d) is zero as t he exit i ng oxide prevent s furt her oxi dat ion
18.Whi ch of t he foll owing is a solut ion t o t he different ial equat ion ( dx( t ) ) / dt + 3x( t )= 0? a) x(t ) = 3e-t b) x(t ) = 2e-3t c) x( t ) = 3/ 2 t 2 d) x(t ) = 3t 2
19.The equat ion sin ( z) = 10 has a) no real compl ex solut ion b) exact ly t wo dist i nct complex solut i ons c) a unique sol ut ions d) an infini t e number of compl ex sol ut ions
20.Consider t he ampl it ude modulat ed ( AM) signal for demodulat ing t he si gnal envel ope det ect or. The mi nimum value of Ac should be a) 2 b) 1 c) 0.5 d) 0
Quest ions 21 t o 75 carry t wo mark each
21.The Thevenin equivalent impedance Zt h bet ween t he nodes P and Q i n t he fol lowing cir cuit is GATE-(2012)-Question-Paper-electronics-electrical-18494 http://placement.freshersworld.com/placement-papers/GATE-(2012)/Ques... 3 of 15 9/4/2012 6:02 PM C lic k t o b u y N O W ! P D F -XCHAN G E w w w .d o cu-trac k .c o m C lic k t o b u y N O W ! P D F -XCHAN G E w w w .d o cu-trac k .c o m
a) 1 b) 1+ s+ 1/ s
c) 2+ s+ 1/ s
d)
22.The driving point i mpedance of t he foll owing net work I s given by .t he component values are a) L= 5H R= 0.5O C= 0.1F b) L= 0.1H R= 0.5O C= 5F c) L= 5H R= 2O C= 0.1F d) L= 0.1H R= 2O C= 5F
23.The ci rcuit in t he figure is used t o charge t he capacit ance C alt ernat ely from t wo current sources as i ndicat ed .The swi t ch S1 and S2 are mechanical ly coupled and connect ed as follows For 2nTSt < (2n+ 1) T (n= 0,1,2,3..) S1 t o P1 and S2 t o P2 For ( 2n+ 1)TSt < ( 2n+ 2)T (n= 0,1,2,3..) S1 t o Q1 and S2 t o Q2
Assume t hat t he capaci t or has zero i nit i al charge, given t hat u(t ) is a unit st ep funct ion , t he volt age Vc ( t ) across t he capacit or is gi ven by a) _( n= 0)^ ( -t ) nt u(t -nT)
b) u( t ) + 2_(n= 0) ^ ( -t ) nt u( t -nT)
c) t u( t ) + 2 _(n= 0) ^ ( -t ) nt u( t -nT)u( t -nt )
d) _( n= 0) ^ [ 0.5-e-( t -2nT) + 0.5e-( t -2nT-T) ]
24.The probabili t y densi t y funct ion ( PDF) of a random variable X i s as shown below The corresponding cumulat i ve dist ribut ion (CDF) has t he form
GATE-(2012)-Question-Paper-electronics-electrical-18494 http://placement.freshersworld.com/placement-papers/GATE-(2012)/Ques... 4 of 15 9/4/2012 6:02 PM C lic k t o b u y N O W ! P D F -XCHAN G E w w w .d o cu-trac k .c o m C lic k t o b u y N O W ! P D F -XCHAN G E w w w .d o cu-trac k .c o m
25.The recursi on relat ion t o solve x= e-x using Newt on-Raphson met hod is a) xn+ 1= e-xn
b) xn+ 1= xn-e-x0
26.The recursi on of t he funct ion at Z= 2 i s a) -1/ 32
b) -1/ 16
c) 1/ 16
d) 1/ 32
27.Consider t he mat rix P= (0&1@-2&-3) .The value of ep is
28.I n t he Taylor series expansion of t he exp(x)+ sin( x) about t he point x= n, t he coefficient of (x-n)2 is a) exp( n) b) 0.5 exp( n) c) exp(n)+ 1 d) exp(n) -1
29.Px(x) = M exp ( -2| x| ) + N exp ( -3| x| ) is t he probabili t y densi t y funct i on for t he real random variabl e x, Over t he ent ire x axis .M and N are bot h posi t ive real numbers . The equat i on relat i ng M ans N is a) M+ 2/ 3N= 1
b) 2M+ 1/ 3N= 1 GATE-(2012)-Question-Paper-electronics-electrical-18494 http://placement.freshersworld.com/placement-papers/GATE-(2012)/Ques... 5 of 15 9/4/2012 6:02 PM C lic k t o b u y N O W ! P D F -XCHAN G E w w w .d o cu-trac k .c o m C lic k t o b u y N O W ! P D F -XCHAN G E w w w .d o cu-trac k .c o m
c) M+ N= 1
d) M+ N= 3
30.The value of t he int egral of t he funct i on g( x,y) = 4x3+ 10y4 along t he st rai ght l i ne segment from t he poi nt (0,0) t o t he point ( 1,2) i n t he x-y plane is a) 33 b) 35 c) 40 d) 56
31.A li near ,t i me-invariant , casual cont inuous t ime syst em has a rat i o t ransfer funct ion wit h a simple pol es at s= -2, and s= -4 and one simple zero at s= -1.a unit st ep u( t ) is appl ied at t he point of t he syst em .at st eady st at e, The out put has const ant value of 1.The impulse response of t he syst em
32.The signal x( t ) is described by x( t )= { 1 for -1StS+ 1 { 0 ot herwise Two of t he angular frequenci es at whi ch it s Fourier t ransform becomes zero are a) n,2n b) 0.5 n,1.5n c) 0, n d) 2 n,2.5n
33.A discret e t ime l inear shift -invariant syst em has an i mpulse response h[ n] wi t h h[ 0] = 1,h[ 1] = -1,h[ 2] = 2, and zero ot herwi se . The syst em is given a input sequence ,x[ n] wi t h x[ 0] = x[ 3] = 1 and ot herwise. The number of nonzero samples in t he out put sequence y[ n] ,and t he value of y[ 2] are respect ively a) 5,2 b) 6,2 c) 6,1 d) 5,3
34.Consider point s P and Q in t he x-y plane, wi t h P= ( 1,0) and Q= ( 0,1) . The l ine i nt egral 2j_P^ Q(( xdx+ ydy) @ ) al ong t he semici rcle wit h t he l ine segment PQ as it s diamet er a) is -1 b) is 0 c) is 1 d) depends on t he direct ion ( clockwise or ant i clockwise) of t he semi circl e
35.Let x(t ) be t he input and y(t ) be t he out put of a cont inuous t ime syst em.Mat ch t he syst em propert ies P1,P2 and P3 wit h syst ems relat ions R1,R2,R3 and R4
Propert ies Relat ions P1: l inear but NOT t i me-invari ant R1: y( t ) = t 2x(t ) P2: Time-invarient but NOT l inear R2: y(t )= t | x(t )| P3: linear and t ime i nvariant R3: y( t )= x( t-5)
a) (P1,R1) ,( P2,R3) ,( P3,R4) b) ( P1,R2) ,( P2,R3),( P3,R4) c) ( P1,R3) ,( P2,R1),( P3,R3) d) ( P1,R1) ,( P2,R2),( P3,R3)
GATE-(2012)-Question-Paper-electronics-electrical-18494 http://placement.freshersworld.com/placement-papers/GATE-(2012)/Ques... 6 of 15 9/4/2012 6:02 PM C lic k t o b u y N O W ! P D F -XCHAN G E w w w .d o cu-trac k .c o m C lic k t o b u y N O W ! P D F -XCHAN G E w w w .d o cu-trac k .c o m 36.A memory l ess sources emit s n symbols each wit h a probabil it y p. The ent ropy of t he source as a funct ion of n a) increase as log n b) decrease as l og (1/ n) c) increase as n d) increase as n l og n
37.{ x( n) } is a real -valued periodi c sequence wi t h a peri od N. x(n) and X( k) from N-poi nt . Discret e Four ier t ransform ( DFT) pairs . The DFT Y(k) of t he sequence Y( n) = 1/ N _( r= 0) ^ ( N-1) x( r) x( n+ r) is a) | X( k) | 2
b) 1/ N _( r= 0) ^ ( N-1) X( r) X'( k+ r )
c) 1/ N _( r= 0) ^ (N-1) X( r) X( k+ r)
d) 0
38.Group 1 l ist a set of t ransfer funct ions. Group 2 gi ves a l ist of a possible st ep response y( t ) .mat ch t he st ep response wit h corresponding t ransfer funct ions Group 1 Group 2
a) P-3, Q-1, R-4, S-2 b) P-3, Q-2, R-4, S-1 c) P-2, Q-1, R-4, S-3 d) P-3, Q-4, R-1, S-2
39.A cert ain syst em has t ransfer funct ion where is t he paramet er .Consider t he st andard negat i ve unit y feedback configurat i on as shown below
GATE-(2012)-Question-Paper-electronics-electrical-18494 http://placement.freshersworld.com/placement-papers/GATE-(2012)/Ques... 7 of 15 9/4/2012 6:02 PM C lic k t o b u y N O W ! P D F -XCHAN G E w w w .d o cu-trac k .c o m C lic k t o b u y N O W ! P D F -XCHAN G E w w w .d o cu-trac k .c o m Which of t he following st at ement are t rue? a) t he closed l oop syst em i s never st able for any values of b) For some posit i ve values of ,t he cl osed loop syst em i s st able , but not for al l posi t ive val ues c) For all posit ive values of ,t he closed l oop syst em i s st able d) The closed loop syst em is st able for al l values of ,bot h posit i ve and negat ive
40.A signal flow graph of a syst em is given below. The set of equat ions t hat correspond t o t his signal fl ow graph is FI G 16 41.The number of open ri ght half plain pol es of G( s) = 10/ ( s^ 5+ 2s^ 4+ 3s^ 3+ 6s^ 2+ 5s+ 3) is ( a) 0 ( b) 1 ( c) 2 (d) 3
42.The magni t ude of frequency of an under damped second order syst em is 5 at 0 rad/ sec and peaks t o 10/ V3 at 5V2 rad/ sec. The t ransfer funct ion of t he syst em is ( a) 500/ ( s^ 2+ 10S+ 100) (b) 300/ (s^ 2+ 5S+ 75)
43.Group I gi ves t wo possi ble choices for t he i mpedance Z in t he diagram. The ci rcuit el ement s in Z sat i sfy t he condit i on R2C2> R1C1. The t ransfer f unct ion V0/ V1 represent s a kind of cont roller. Mat ch t he i mpedances in Group I wit h t he t ypes of cont roll ers in Group I I 1. PI D cont roll er 2. Lead compensat or 3. Lag compensat or
( a) Q-1, R-2 ( b) Q-1, R-3 ( c) Q-2, R-3 ( d) Q-3, R-2 44.For t he circuit shown in t he fol lowing figure, t ransi st ors M1 and M2 are ident i cal NMOS t ransi st ors. Assume t hat M2 is in sat urat ion and t he out put i s unloaded GATE-(2012)-Question-Paper-electronics-electrical-18494 http://placement.freshersworld.com/placement-papers/GATE-(2012)/Ques... 8 of 15 9/4/2012 6:02 PM C lic k t o b u y N O W ! P D F -XCHAN G E w w w .d o cu-trac k .c o m C lic k t o b u y N O W ! P D F -XCHAN G E w w w .d o cu-trac k .c o m The current I x is relat ed t o I bias as ( a) I x= I bias+ I s ( b) I x= I bi as ( c) I x= I bi as- I s ( d) I x= I bias-[ VDD-(Vout / / RE) ] 45.The measured t ransconduct ance gm of an NMOS t ransist or operat ing in t he linear region is pl ot t ed agai nst t he gat e vol t age Vg at a const ant drain volt age VD. Which of t he fol lowing figures represent s t he expect ed dependence of gm on Vg? ( a) . ( b) . ( c) . (d) . 46.Consider t he followi ng circui t usi ng an ideal OPAMP. The I -V charact eri st ics of t he diode is described by t he relat ion I = I _( 0 ) ( e^ (v/ v_r )-1) where Vr= 25mV, I o= 1A and V is t he volt age across t he di ode (t aken as posi t ive for forward bi as) For an input volt age Vi= -1V, t he out put volt age V0 i s. ( a) 0 V ( b) 0.1 V ( c) 0.7 V ( d) 1.1 V
47.The OPAMP circui t shown above represent s a ( a) hi gh pass filt er ( b) Low pass filt er ( c) band pass fi lt er ( d) band rej ect fi lt er
48.Two ident ical NMOS t ransist ors M1 and M2 are connect ed as shown bel ow Vbi as is chosen so t hat bot h t ransi st ors are in sat urat i on. The equi valent gm of t he pai r is defined t o be ( dI _(out )) / (dV_i ) at const ant Vout . GATE-(2012)-Question-Paper-electronics-electrical-18494 http://placement.freshersworld.com/placement-papers/GATE-(2012)/Ques... 9 of 15 9/4/2012 6:02 PM C lic k t o b u y N O W ! P D F -XCHAN G E w w w .d o cu-trac k .c o m C lic k t o b u y N O W ! P D F -XCHAN G E w w w .d o cu-trac k .c o m The equival ent gm of t he pair i s ( a) The sum of i ndividual gms of t he t ransist or s ( b) The product of indi vidual gms of t he t ransi st ors ( c) Nearly equal t o t he gm of M1 ( d) Nearly equal t o gm/ go of M2 49.An 8085 execut es t he foll owing inst ruct ion 2710 LXI H,30A0H 2713 DAD H 2714 PCHI L All addresses and const ant s are in Hex. Let PC be t he cont ent s of t he program count er and HL be t he cont ent s of t he HL regist er pai r j ust aft er execut ing PCHL
Which of t he foll owing st at ement is correct ? ( a) PC = 2715H (b) PC = 30A0H HL = 30A0H HL = 2715H
( c) PC = 6140H ( d) PC = 6140H HL = 6140H HL = 2715H 50.An ast able mul t ivibrat or ci rcuit using I C 555 t imer is shown bel ow. Assume t hat t he circui t is osci llat ing st eadily The volt age Vc across t he capacit or varies bet ween ( a) 3V t o 5V ( b) 3V t o 6V ( c) 3.6V t o 6V ( d) 3.6V t o 5V 51.Sil icon is doped wit h boron t o a concent rat ion of 4 1017 at oms/ cm3.Assume t he int rinsi c carrier concent rat ion of sili con t o be 1.5 1010 at oms/ cm3and t he value of kT/ q t o be 25 mV at 300K. Compared t o undoped sili con, t he Fermi level of doped si licon ( a) goes down by 0.13 eV ( b) goes up by 0.13 eV ( c) goes down by 0.427 eV ( d) goes up by 0.427 eV 52.The cross sect i on of a JFET is shown in t he followi ng fi gure. Let VG be -2V and let VP be t he i nit i al pi nch-off vol t age. I f t he widt h W is doubled ( wit h ot her geomet rical paramet ers and doping levels remai ns t he same) , t hen t he rat i o bet ween t he mut ual t ransconduct ances of t he init ial and t he modi fies JFET is ( a) 4 (b) 1/ 2(( 1-V( 2/ V_P ) )/ ( 1-V( 1/ ( 2V_P) )) ( c) (1-V( 2/ V_P ) ) / ( 1-V( 1/ (2V_P) ) ) ( d)( 1-( 2/ V(V_P )) ) / ( 1-( 1/ (2V( V_P )) ) ) 53.Consider t he Schmidt t ri gger circuit shown below GATE-(2012)-Question-Paper-electronics-electrical-18494 http://placement.freshersworld.com/placement-papers/GATE-(2012)/Ques... 10 of 15 9/4/2012 6:02 PM C lic k t o b u y N O W ! P D F -XCHAN G E w w w .d o cu-trac k .c o m C lic k t o b u y N O W ! P D F -XCHAN G E w w w .d o cu-trac k .c o m A t riangul ar wave whi ch goes from -12V t o 12V is appli ed t o t he invert ing input of t he OPAMP. Assume t hat t he out put of t he OPAMP swings from + 15 V t o -15V. The vol t age at t he non-invert ing input swit ches bet ween ( a) -15V and + 12V (b) -7.5V and + 7.5 V ( c) -5V and + 5V (d) 0V and 5V 54.The l ogic funct ion implement ed by t he followi ng circui t at t he t erminal OUT is
( a) P NOR Q ( b) P NAND Q ( c) P OR Q ( d) P AND Q 55.Consider t he foll owing assert ions. S1: For Zener effect t o occur, a very abrupt j unct ion is requi red. S2: For quant um t unnell ing t o occur, a very narrow energy barri er is required. Which of t he foll owing is correct ? ( a) Only S2 i s t rue ( b) S1and S2 are bot h t rue but S2 is not a reason for S1 ( c) S1 and S2 are bot h t rue but S2 is a reason for S1 ( d) Bot h S1 and S2 are fal se 56.The t wo numbers represent ed i n signed 2s complement form are P= 11101101 and Q= 11100110. I f Q is subt ract ed f rom P, t he value obt ai ned i n si gned 2s compl iment form is ( a) 100000111 ( b) 00000111 ( c) 11111001 (d) 111111001 57.Whi ch of t he foll owi ng Bool ean Expressions cor rect ly represent s t he relat i on bet ween P,Q,R and M1? ( a) M1 = (P OR Q) XOR R ( b) m1 = ( P AND Q) XOR R ( c) m1 = (P NOR Q) XOR R ( d) m1= (P XOR Q) XOR R 58.For t he circui t shown in t he foll owing figure, I 0-I 3 are input s t o t he: mult i plexer. R( MSB) and S are cont rol bit s The out put Z can be represent ed as ( a) PQ + P QS + Q R S ( b) P Q + PQ R + P Q S ( c) P Q R+ P QR+ PQRS + Q R S ( d) PQ R + PQR S + Q R S 59.For each of t he posit i ve edge-t riggered J-K fli p flop used i n t he foll owing fi gure, t he propagat ion del ay i s LT GATE-(2012)-Question-Paper-electronics-electrical-18494 http://placement.freshersworld.com/placement-papers/GATE-(2012)/Ques... 11 of 15 9/4/2012 6:02 PM C lic k t o b u y N O W ! P D F -XCHAN G E w w w .d o cu-trac k .c o m C lic k t o b u y N O W ! P D F -XCHAN G E w w w .d o cu-trac k .c o m Which of t he foll owing wavefor ms correct l y represent s t he out put at Q1 ( a)
( b)
( c)
( d)
60..For t he circuit shown in t he figure, D has a t ransi t ion from 0 t o 1 aft er CLK changes from 1 t o 0. Assume gat e delays t o be negligi ble
Which of t he foll owing st at ement s is t rue? ( a) Q goes t o 1 at t he CLK t ransi t ion and st ays at 1 ( b) Q goes t o ) at t he CLK t ransit ion and st ays at 0 ( c) Q goes t o 1 at t he CLK t ransi t ion and goes t o 0 when D goes t o 1 ( d) Q goes t o 0 at t he CLK t ransi t ion and goes t o 1 when D goes t o 1 61.A rect angular wavegui de of int ernal dimensions ( a = 4 cm abd b= 3 cm) is t o be operat ed in TE11 mode. The mini mum operat i ng frequency is ( a) 6.25GHz ( b) 6.0GHz ( c) 5.0 GHz (d) 3.75GHz 62.One end of a loss-less t ransmissi on line having t he charact erist i c impedance of 75O and lengt h 1 cm is short-circui t ed. At 3GHz, t he input impedance at t he ot her end of t he t ransmission li ne i s ( a) 0 (b) Resist ive ( c) Capaci t ive ( d) I nduct ive 63.A uni form plane wave in t he free space is normall u i ncident on an infinit ely t hick di elect ric slab ( diel ect ri c const ant r = 9) . The magnit ude of t he reflect ion coefficient i s ( a) 0 (b) 0.3 ( c) 0.5 ( d) 0.8 64. I n t he desi gn of a single mode st ep index opt ical fiber close t o upper cut-off, t he singl e mode operat i on is NOT preserved if ( a) radi us as well as operat ing wavelengt h are halved ( b) radi us as wel l as operat ing wavelengt h are doubled ( c) radi us is halved and operat ing wavelengt h i s doubled GATE-(2012)-Question-Paper-electronics-electrical-18494 http://placement.freshersworld.com/placement-papers/GATE-(2012)/Ques... 12 of 15 9/4/2012 6:02 PM C lic k t o b u y N O W ! P D F -XCHAN G E w w w .d o cu-trac k .c o m C lic k t o b u y N O W ! P D F -XCHAN G E w w w .d o cu-trac k .c o m ( d) radi us is doubled and operat i ng wavel engt h is hal ved 65.At 20 GHz, t he gain of a paraboli c dish ant enna of 1 met er diamet er and 70% effici ency i s ( a) 15 dB ( b) 25 dB ( c) 35 dB ( d) 45 dB 66.Noise wit h doubl e-sided power spect ral densi t y of K over al l frequencies is passed t hrough a RC low pass fil t er wit h 3 dB cut-off frequency of fc. The ni ose power at t he filt er out piut i s ( a) K ( b) Kfc ( c) K Previ ous Papers | Next Papers j aya on Mon, 2012- 08- 20 16:59 anushr ee on Fr i , 2012- 08- 17 23: 14 PRAVI N on Sat , 2012- 08- 04 18:06 Abhi on Tue, 2012- 07- 24 15:00 More Sample Papers GATE Company-Profil e GATE Select i on-Procedure GATE Placement -Paper Quest ion- Paper Syll abus and Select ion procedure- 2013- GATE Placement -Paper Whol e-Test paper GATE-2013 Tips and analysis- GATE Placement -Paper Quest ion- Paper I nst rument at ion quest ions-19 Aug 2012 GATE Placement -Paper Quest ion-Paper comput er engi neering -02 Aug 2012 GATE Placement -Paper Quest ion-Paper Ci vil engineeri ng solved quest ion paper-2012-02 Aug 2012 1 2 3 next l ast
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