APM2558NU

N-Channel Enhancement Mode MOSFET

Features

25V/60A, RDS(ON)=4.5m (Typ.) @ VGS=10V RDS(ON)=7.5m (Typ.) @ VGS=4.5V

Pin Description

D S

Super High Dense Cell Design Reliable and Rugged Avalanche Rated Lead Free and Green Devices Available (RoHS Compliant)

Top View of TO-252

D

Applications

Power Management in Desktop Computer or DC/DC Converters

N-Channel MOSFET

Ordering and Marking Information

APM2558N Assembly Material Handling Code Temperature Range Package Code APM2558N U: APM2558N XXXXX Package Code U : TO-252 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device XXXXX - Date Code

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2008 1 www.anpec.com.tw

APM2558NU
Absolute Maximum Ratings
Symbol VDSS VGSS TJ TSTG IS IDP ID PD RJC RJA EAS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current 300s Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient Drain-Source Avalanche Energy, L=0.5mH TC=25C TC=100C TC=25C TC=100C TC=25C TC=100C Parameter Rating 25 20 150 -55 to 150 40 160 90 60* 48 50 20 2.5 50 225 Unit

Common Ratings (TA=25C Unless Otherwise Noted) V C C A A A W C/W C/W mJ

NoteG Current limited by bond wire. *

Electrical Characteristics
Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON)
a

(TA = 25C Unless Otherwise Noted)

Parameter

Test Conditions

APM2558NU Min. Typ. Max.

Unit

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance

VGS=0V, IDS=250A VDS=20V, VGS=0V TJ=85C VDS=VGS, IDS=250A VGS=20V, VDS=0V VGS=10V, IDS=40A VGS=4.5V, IDS=20A ISD=40A, VGS=0V IDS=40A, dlSD/dt=100A/s

25 1.3 -

1.8 4.5 7.5

1 30 2.5 100 5.7 10

V A V nA m

Diode Characteristics VSD

trr
a

Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge

0.85 25 10

1.1 -

V ns nC

Qrr

Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2008

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APM2558NU
Electrical Characteristics (Cont.)
Symbol Parameter
b

(TA = 25C Unless Otherwise Noted)

Test Conditions

APM2558NU Min. Typ. Max.

Unit

Dynamic Characteristics RG Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd

Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time
b

VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz

1.6 2000 400 320 14 12 49 21

2800 26 23 89 39

pF

VDD=15V, RL=15, IDS=1A, VGEN=10V, RG=6

ns

Gate Charge Characteristics Total Gate Charge

VDS=15V, VGS=4.5V, IDS=40A -

22.5 5.6 13

32 nC

Gate-Source Charge Gate-Drain Charge

Note a : Pulse test ; pulse width300s, duty cycle2%. Note b : Guaranteed by design, not subject to production testing.

Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2008

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APM2558NU
Typical Operating Characteristics

Power Dissipation
60

Drain Current
70 60

50

ID - Drain Current (A)

TC=25 C 0 20 40 60 80 100 120 140 160 180
o

50 40 30 20 10 0 TC=25 C,VG=10V 0 20 40 60 80 100 120 140 160

o

Ptot - Power (W)

40

30

20

10

Tj - Junction Temperature (C)

Tj - Junction Temperature (C)

Safe Operation Area

400

Thermal Transient Impedance

2 1

ID - Drain Current (A)

Rd s(o n)

1ms 10ms 100ms 1s DC

Normalized Effective Transient

100
Lim it

Duty = 0.5

0.2 0.1 0.05

10

0.1
0.02

0.01 Mounted on 1in pad o RJA :50 C/W

2

0.1 0.01

TC=25 C

Single Pulse

0.1

10

100

0.01 1E-4

1E-3

0.01

0.1

10

100

VDS - Drain - Source Voltage (V)

Square Wave Pulse Duration (sec)

Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2008

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APM2558NU
Typical Operating Characteristics (Cont.)

Output Characteristics
160 VGS= 5,6,7,8,9,10V 140 120 4.5V
14 12 10 8 6 4 2 0

Drain-Source On Resistance

RDS(ON) - On - Resistance (m)

ID - Drain Current (A)

4V 100 80 60 40 3V 20 2.5V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5V

VGS=4.5V

VGS=10V

20

40

60

80 100 120 140 160

VDS - Drain-Source Voltage (V)

ID - Drain Current (A)

Drain-Source On Resistance
18 IDS=40A
1.6

Gate Threshold Voltage

IDS =250A

RDS(ON) - On - Resistance (m)

16 14 12 10 8 6 4 2 0

VGS - Gate-Source Voltage (V)

1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25

10

25

50

75

100 125 150

VGS - Gate - Source Voltage (V)

Tj - Junction Temperature (C)

Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2008

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APM2558NU
Typical Operating Characteristics (Cont.)

Drain-Source On Resistance
2.0 VGS = 10V 1.8 IDS = 40A

Source-Drain Diode Forward

160 100

Normalized On Resistance

1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75

IS - Source Current (A)

Tj=150 C 10 Tj=25 C
o

1
RON@Tj=25 C: 4.5m 100 125 150
o

0.5 0.0

0.3

0.6

0.9

1.2

1.5

Tj - Junction Temperature (C)

VSD - Source-Drain Voltage (V)

Capacitance
3000 2700 2400 Frequency=1MHz
10 9 VDS= 15V ID= 40A

Gate Charge

VGS - Gate-source Voltage (V)

8 7 6 5 4 3 2 1 0

C - Capacitance (pF)

2100 1800 1500 1200 900 600 300 0 Crss Coss

Ciss

10

15

20

25

18

27

36

45

VDS - Drain - Source Voltage (V)

QG - Gate Charge (nC)

Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2008

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APM2558NU
Package Information
TO-252
E b3 L3 A c2 E1

L4

SEE VIEW A

GAUGE PLANE 0.25

SEATING PLANE L VIEW A A1

S Y M B O L A A1 b b3 c c2 D D1 E E1 e H L L3 L4 0

TO-252 MILLIMETERS MIN. 2.18 MAX. 2.39 0.13 0.50 4.95 0.46 0.46 5.33 4.57 6.35 3.81 2.29 BSC 9.40 0.90 0.89 10.41 1.78 2.03 1.02 0 8 0 0.370 0.035 0.035 0.89 5.46 0.61 0.89 6.22 6.00 6.73 6.00 0.020 0.195 0.018 0.018 0.210 0.180 0.250 0.150 0.090 BSC 0.410 0.070 0.080 0.040 8 MIN. 0.086 INCHES MAX. 0.094 0.005 0.035 0.215 0.024 0.035 0.245 0.236 0.265 0.236

Note : Follow JEDEC TO-252 .

Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2008

D1
0

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APM2558NU
Carrier Tape & Reel Dimensions
OD0 P0 P2 P1 A E1 F K0 B SECTION A-A T B0 A0 OD1 B A SECTION B-B

Application

H A

T1

330.0 .00 50 MIN. 2 TO-252 P0 4.0 .10 0 P1 8.0 .10 0

T1 C d 16.4+2.00 13.0+0.50 1.5 MIN. -0.00 -0.20 P2 2.0 .05 0 D0 D1 1.5+0.10 1.5 MIN. -0.00

E1

20.2 MIN. 16.0 .30 1.75 .10 7.50 .05 0 0 0 T A0 B0 K0 0.6+0.00 6.80 .20 10.40 .20 2.50 .20 0 0 0 -0.40

(mm)

Devices Per Unit

Package Type TO-252 Unit Tape & Reel Quantity 2500

Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2008

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APM2558NU
Taping Direction Information
TO-252
USER DIRECTION OF FEED

Reflow Condition
TP

(IR/Convection or VPR Reflow)

tp Ramp-up Critical Zone TL to TP

Temperature

TL Tsmax

tL

Tsmin Ramp-down ts Preheat

25

t 25 to Peak C

Reliability Test Program

Test item SOLDERABILITY HOLT PCT TST ESD Latch-Up Method MIL-STD-883D-2003 MIL-STD-883D-1005.7 JESD-22-B, A102 MIL-STD-883D-1011.9 MIL-STD-883D-3015.7 JESD 78
9

Time
Description 245C, 5 sec 1000 Hrs Bias @125C 168 Hrs, 100%RH, 121C -65C~150C, 200 Cycles VHBM > 2KV, VMM > 200V 10ms, 1tr > 100mA
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APM2558NU
Classification Reflow Profiles
Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classification Temperature (Tp) Time within 5C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds See table 1 10-30 seconds 6C/second max. Pb-Free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds See table 2 20-40 seconds 6C/second max. 8 minutes max.

6 minutes max. Time 25C to Peak Temperature Note: All temperatures refer to topside of the package. Measured on the body surface. Table 1. SnPb Eutectic Process Package Peak Reflow Temperatures Package Thickness <2.5 mm 2.5 mm Package Thickness Volume mm <350
3 3

Volume mm <350

Volume mm 350

240 +0/-5C 225 +0/-5C Volume mm 350-2000

3

225 +0/-5C 225 +0/-5C Volume mm >2000

3

Table 2. Pb-free Process Package Classification Reflow Temperatures

<1.6 mm 260 +0C* 260 +0C* 260 +0C* 1.6 mm 2.5 mm 260 +0C* 250 +0C* 245 +0C* 2.5 mm 250 +0C* 245 +0C* 245 +0C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0C. For example 260C+0C) at the rated MSL level.

Customer Service
Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 2F, No. 11, Lane 218, Sec 2 Jhongsing Rd., Sindain City, Taipei County 23146, Taiwan Tel : 886-2-2910-3838 Fax : 886-2-2917-3838

Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2008

10

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