STR W6735

!
STR-W6735 Quasi-Resonant Topology Primary Switching Regulators
Features and Benefits

Quasi-resonant topology IC Low EMI noise and soft switching Bottom-skip operation Improved system efficiency over the entire output load by avoiding increase of switching frequency Standby burst mode operation Lowers input power at very light output load condition Avalanche-guaranteed MOSFET Improves systemlevel reliability and does not require VDSS derating 500 V / 0.57 , 160 W (120 Vac input)
Description
The STR-W6735 is a quasi-resonant topology IC designed for SMPS applications. It shows lower EMI noise characteristics than conventional PWM solutions, especially at greater than 2 MHz. It also provides a soft-switching operation to turn on the internal MOSFET at close to zero voltage (VDS bottom point) by use of the resonant characteristic of primary inductance and a resonant capacitor. The package is a fully molded TO-220, which contains the controller chip (MIC) and MOSFET, enabling output power up to 160 W with a 120 Vac input. The bottom-skip function skips the first bottom of VDS and turns on the MOSFET at the second bottom point, to minimize an increase of operational frequency at light output load, improving system-level efficiency over the entire load range. There are two standby functions available to reduce the input power under very light load conditions. The first is an auto-burst mode operation that is internally triggered by periodic sensing, and the other is a manual standby mode, which is executed by clamping the secondary output. In general applications, the manual standby mode reduces the input power further compared to the auto-burst mode. The soft-start function minimizes surge voltage and reduces power stress to the MOSFET and to the secondary rectifying
Continued on the next page
Continued on the next page
Package: 6-pin TO-220
Typical Application
+B ErrAmp P
S1
GND Standby ON/OFF LowB S2
D
1 4
VCC
STR-W6735
SI
Standby Out GND
Cont
6
FB
3 7 5
S/GND
RX
OCP /BD
SS /OLP
A B
For ErrAmp, Sanken SE series device recommended For SI, Sanken linear regulator IC recommended
CX
ROCP
28103.30-5
STR-W6735
Features and Benefits (continued) Various protections Improved system-level reliability Pulse-by-pulse drain overcurrent limiting Overvoltage protection (bias winding voltage sensing), with latch Overload protection with latch Maximum on-time limit
Quasi-Resonant Topology Primary Switching Regulators

Description (continued) diodes during the start-up sequence. Various protections such as overvoltage, overload, overcurrent, maximum on-time protections and avalanche-energy-guaranteed MOSFET secure good systemlevel reliability. Applications include the following: Set Top Box LCD PC monitor, LCD TV Printer, Scanner SMPS power supplies
Selection Guide
Part Number
STR-W6735
Package
TO-220
Packing
Bulk, 100 pieces
Absolute Maximum Ratings at TA = 25C

Parameter Drain Current1 Maximum Switching Current2 Single Pulse Avalanche Energy3 Input Voltage for Controller (MIC) SS/OLP Terminal Voltage FB Terminal Inflow Current FB Terminal Voltage OCP/BD Terminal Voltage MOSFET Power Dissipation4 Symbol IDpeak IDmax EAS VCC VSSOLP IFB VFB VOCPBD PD1 Terminal Conditions 1 - 3 Single pulse 1 - 3 TA = 20C to 125C Single pulse, VDD = 99 V, L = 20 mH, 1-3 ILpeak = 5.8 A 4-3 5-3 6-3 6 - 3 IFB within the limits of IFB 7-3 With infinite heatsink 1-3 Without heatsink 4 - 3 VCC ICC Refer to TOP Rating 20 20 380 35 0.5 to 6.0 10 0.5 to 9.0 1.5 to 5.0 28.7 1.3 0.8 20 to 115 20 to 115 40 to 125 150 Unit A A mJ V V mA V V W W W C C C C
Controller (MIC) Power Dissipation PD2 Operating Internal Leadframe Temperature TF Operating Ambient Temperature TOP Storage Temperature Tstg Junction Temperature TJ 1Refer to figure 2 2I DMAX is the drain current determined by the drive voltage of the IC and the threshold voltage, Vth, of the MOSFET 3Refer to figure 3 4Refer to figure 5
All performance characteristics given are typical values for circuit or system baseline design only and are at the nominal operating voltage and an ambient temperature of +25C, unless otherwise stated.
Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com
STR-W6735
4
VCC

Protection latch R S Q
DRIVE Reg
+ Start Stop Burst

Burst Control
Reg& Iconst
Delay
OVP
S/GND
3 6
S Q OSC MaxON R
OCP
OLP
+ Soft Start
Bottom Selector Counter
Number 1 2 3 4 5 6 7
Name D NC S/GND VCC SS/OLP FB OCP/BD Drain Clipped
Description MOSFET drain No connection MOSFET source and ground
Source/ground terminal Power supply terminal Soft Start/Overload Protection terminal Feedback terminal Overcurrent Protection/Bottom Detection
Input of power supply for control circuit Input to set delay for Overload Protection and Soft Start operation Input for Constant Voltage Control and Burst (intermittant)Mode oscillation cotnrol signals Input for overcurrent detection and bottom detection signals
Figure 1 MOSFET Safe Operating Area Derating Curve

100
Safe Operating Area Temperature Derating Coefficient (%)
80 Drain Current, ID (A)
60
40
20
25
50
75
100
125
150
Temperature, TF (C)
+ -
BSD
BD
Figure 2 MOSFET Safe Operating Area

Drain Current versus Voltage at TA = 25C, Single Pulse
100.00
20.00 10.00
1.00
0.10 Refer to figure 1 for MOSFET SOA temperature derating coefficient 0.01 1 10 100 1000
+ + OCP/BD SS/OLP
R Q
+ FB -
FB
7 5
Functions
it t lim on) ( rren Cu to R DS due
0.
Drain-to-Source Voltage, VDS (V)
1 m s
STR-W6735
Figure 3 MOSFET Avalanche Energy Derating Curve

100 EAS Temperature Derating Coefficient (%) (C/W) Transient Thermal Resistance, R
JC
Figure 4 Transient Thermal Resistance

10.000
80
1.000
60
0.100
40
0.010
20
0.001 25 50 75 100 125 150 Channel Junction Temperature, TJ (C)
10
100 Time, t (s)
1m
10m
100m
Figure 5 MOSFET Power Dissipation versus Temperature

30
25 Power Dissipation, PD1 (W) With infinite heatsink PD1 = 28.7 W at TA
20
15
10
Without heatsink PD1 = 1.3 W at TA 0 20 40 60 80 100 120 140 160
Ambient Temperature, TA (C)
STR-W6735
ELECTRICAL CHARACTERISTICS Characteristic Symbol

Terminals Min. Typ. Max. Units
ELECTRICAL CHARACTERISTICS for Controller (MIC)1, valid at TA = 25C, VCC = 20 V, unless otherwise specified Power Supply Start-up Operation Operation Start Voltage Operation Stop Voltage Circuit Current In Operation Circuit Current In Non-Operation Oscillation Frequency Soft Start Operation Stop Voltage Soft Start Operation Charging Current Normal Operation Bottom-Skip Operation Threshold Voltage 1 Bottom-Skip Operation Threshold Voltage 2 Overcurrent Detection Threshold Voltage OCP/BDOCP/BD Terminal Outflow Current Quasi-Resonant Operation Threshold Voltage 1 Quasi-Resonant Operation Threshold Voltage 2 FB Terminal Threshold Voltage FB Terminal Inflow Current (Normal Operation) Standby Operation Standby Operation Start Voltage Standby Operation Start Voltage Interval Standby Non-Operation Circuit Current FB Terminal Inflow Current, Standby Operation FB Terminal Threshold Voltage, Standby Operation Minimum On Time Maximum On Time Protection Operation Overload Protection Operation Threshold Voltage Overload Protection Operation Charging Current Overvoltage Protection Operation Voltage Latch Circuit Holding Current2 Latch Circuit Release Voltage2 Drain-to-Source Breakdown Voltage Drain Leakage Current On Resistance Switching Time Thermal Resistance
1Current
VCC(ON) VCC(OFF) ICC(ON) ICC(OFF) fosc VSSOLP(SS) ISSOLP(SS) VOCPBD(BS1) VOCPBD(BS2) VOCPBD(LIM) IOCPBD VOCPBD(TH1) VOCPBD(TH2) VFB(OFF) IFB(ON) VCC(S) VCC(SK) ICC(S) IFB(S) VFB(S) tON(MIN) tON(MAX) VSSOLP(OLP) ISSOLP(OLP) VCC(OVP) ICC(H) VCC(La.OFF) VDSS IDSS RDS(on) tf RJA
4-3 4-3 4-3 4-3 1-3 5-3 5-3 7-3 7-3 7-3 7-3 7-3 7-3 6-3 6-3 4-3 4-3 4-3 6-3 6-3 1-3 1-3 5-3 5-3 4-3 4-3 4-3 1-3 1-3 1-3 1-3 Junction to Internal Frame
16.3 8.8 19 1.1 710 0.720 0.485 0.995 250 0.28 0.67 1.32 600 10.3 1.10 0.55 27.5 4.0 16 25.5 6.0 500
18.2 9.7 22 1.2 550 0.665 0.435 0.940 100 0.40 0.80 1.45 1000 11.1 1.35 20 4 1.10 0.75 32.5 4.9 11 27.7 45 7.2
19.9 10.6 6 100 25 1.4 390 0.605 0.385 0.895 40 0.52 0.93 1.58 1400 12.7 1.75 56 14 1.50 1.20 39.0 5.8 6 29.9 140 8.5 300 0.57 400 1.55
V V mA A kHz V A V V V A V V V A V V A A V s s V A V A V V A ns C/W
ELECTRICAL CHARACTERISTICS for MOSFET, valid at TA = 25C, unless otherwise specified
polarity with respect to the IC: positive current indicates current sink at the terminal named, negative current indicates source at the terminal named. 2Latch circuit refers to operation during Overload Protection or Overvoltage Protection.
STR-W6735
ELECTRICAL CHARACTERISTICS Test Conditions* Parameter Operation Start Voltage Operation Stop Voltage Circuit Current In Operation Circuit Current In Non-operation Oscillation Frequency Soft Start Operation Stop Voltage Soft Start Operation Charging Current Bottom-Skip Operation Threshold Voltage 1 Bottom-Skip Operation Threshold Voltage 2 Overcurrent Detection Threshold Voltage OCP/BDOCP/BD Terminal Outflow Current Quasi-Resonant Operation Threshold Voltage 1 Quasi-Resonant Operation Threshold Voltage 2 FB Terminal Threshold Voltage FB Terminal Inflow Current (Normal Operation) Standby Operation Start Voltage Standby Operation Start Voltage Interval Standby Non-Operation Circuit Current FB Terminal Inflow Current, Standby Operation FB Terminal Threshold Voltage Standby Operation Minimum On Time Maximum On Time Overload Protection Operation Threshold Voltage Overload Protection Operation Charging Current Overvoltage Protection Operation Voltage Latch Circuit Holding Current Test Conditions VCC voltage at which oscillation starts. VCC voltage at which oscillation stops. Inflow current flowing into power supply terminal in oscillation. Inflow current flowing into power supply terminal prior to oscillation. Oscillating frequency ( fosc= 1 / T ). SS/OLP terminal voltage at which ISS/OLP reach 100 A by raising the SS/OLP terminal voltage from 0 V gradually. SS/OLP terminal charging current (SS/OLP terminal voltage = 0 V). Input 1 s pulse width, as shown in waveform 1, to OCP/BD terminal twice after V1-3 rises. After that, offset the input waveform gradually from 0 V in the minus direction. Measurment of the offset voltage VOCPBD(BS1) is taken when the V1-3 start-to-fall point switches from twopulses-after to one-pulse-after. After measuring VOCPBD(BS1), as shown in waveform 2, offset the input waveform gradually. Measurment of the offset voltage VOCPBD(BS2) is taken when the V1-3 start-to-fall point switches from two-pulses-after to one-pulse-after. OCP/BD terminal voltage at which oscillation stops by lowering the OCP/BD terminal voltage from 0 V gradually. OCP/BD terminal outflow current (OCP/BD terminal voltage = 0.95 V). OCP/BD terminal voltage at which oscillation starts with setting the OCP/BD terminal voltage at 1 V, and then lowering the voltage gradually. OCP/BD terminal voltage at which oscillation stops by raising the OCP/BD terminal voltage from 0 V gradually. FB terminal voltage at which oscillation stops by raising the FB terminal voltage from 0 V gradually. FB terminal inflow current (FB terminal voltage = 1.6 V). VCC voltage at which ICC reaches 1 mA (FB terminal voltage = 1.6 V). Specified by VCC(SK) = VCC(S) VCC(OFF). Inflow current flowing into power supply terminals prior to oscillation (FB terminal voltage = 1.6 V). FB terminal inflow current (FB terminal voltage = 1.6 V). FB terminal voltage at which oscillation starts by raising the FB terminal voltage from 0 V gradually. Waveform between terminals 1 and 3 at low. Waveform between terminals 1 and 3 at low. SS/OLP terminal voltage at which oscillation stops. SS/OLP terminal charging current (SS/OLP terminal voltage = 2.5 V). VCC voltage at which oscillation stops. Inflow current at VCC(OFF) 0.3; after OVP operation. 20 2 VCC (V) 020 208.8 20 15 20 20 Measurement Circuit
20
20 20 015 10.2 10.2 15 20 20 20 5 030 VCC(OFF) 0.3 306 1 6 1 4
Latch Circuit Release Voltage VCC voltage at which ICC reaches 20 A or lower by decreasing VCC after OVP operation. *Oscillating operation is specified with a rectangular waveform between terminals 1 and 3.
STR-W6735
Measurement Circuit 1
S/GND
VCC
SS/OLP
FB
OCP/BD
TON
90 50 10
100
V
4.7k ICC 0.1 F
tf
10V
VCC
S/GND
VCC
SS/OLP
FB
OCP/BD
100
4.7k
0.1 F
VCC 10V
20V
S/GND
VCC
SS/OLP
FB
OCP/BD
100
4.7k
0.1 F
VCC 10V
20V
STR-W6735
D S/GND VCC SS/OLP FB OCP/BD
0.1 F 100
V
4.7k
A
10V VCC
100
V A
VCC 10V
20V
S/GND
VCC
SS/OLP
FB
OCP/BD
5V OSC1 100
200 500nS
4.7k
0.1 F
9V V1-3 VCC 10V TON

MIN 20V
OSC1
STR-W6735
IDSS VDSS
MOSFET MOSFET measuring equipment
S/ GND
VCC
SS/OLP
FB
OCP/BD
VCC 0
30V
VDS
IL IL VDS VDD 0 T1 VCC Avalanche energy tester VD SPeak
Equation for calculation of avalanche engery, EAS; to be adjusted for ILPeak = 5.8 A
E AS 1 L ILPeak 2
2
VDS Peak VDS Peak VDD
D S/ GND VCC SS/OLP FB OCP/BD
4.7k VDS(ON) IDS 0.1 F RDS(ON)=VDS(ON)/IDS 20V
STR-W6735
Waveform 1
VDS
VOCP/BD
GND
VOCPBD(BS1)
Waveform 2
VDS
VOCP/BD
GND
VOCPBD(BS2)
10
STR-W6735

PACKAGE DIMENSIONS, TO-220
7.9 0.2
Branding 2.8 MAX

XXXXXXXX XXXXXXXX
16.9 0.3
2.6 0.1 Terminal dimension at case surface 5.0 0.5
1.34 0.1
+0.2
(5.4)
1.74 0.1
+0.2
6P1.27 0.15 = 7.62 0.15 Terminal dimensions at case surface
0.45 0.1
+0.2
5.08 0.6 Terminal dimension at lead tips
1 2 3 4 5 6 7
Gate burr: 0.3 mm (max.) Terminal core material: Cu Terminal treatment: Ni plating and solder dip Heat sink material: Cu Heat sink treatment: Ni plating Leadform: 2003 Weight (approximate): 2.3 g Dimensions in millimeters
Drawing for reference only Branding codes (exact appearance at manufacturer discretion): 1st line, type: W6735 2nd line, lot: YMDD R Where: Y is the last digit of the year of manufacture M is the month (1 to 9, O, N, D) DD is the 2-digit date R is the manufacturer registration symbol
10.4 0.5
3.2 0.2
Gate Burr
4 0.2
10.0 0.2
4.2 0.2 2.8 0.2
(2 R 1)
11
STR-W6735

PACKING SPECIFICATIONS Minimum packing option: Tube FM-205 E
4.8
+0.4 0
1.4
5.1 9 R0.6 8.9 9.50.1 (15.4)

+0.3
Shipping Tube Dimensions: Wall thickness: 0.60.3 mm Wall warp: <2 mm Material: Hardened polyvinyl Coating: antistatic Tolerance 0.4 mm, unless otherwise specified
2.85 (3.6) 14.3
35.0
Side marked ANTISTATIC

1.3 0.2
+0.3
Spacer
Carton (side view)
Shipping Carton Dimensions: Capacity: 1800 pieces maximum per carton 36 tubes per carton 3 rows, 12 tubes per row
Tube
Spacer
620
125
Tube
All dimensions: mm
185
12
STR-W6735
WARNING These devices are designed to be operated at lethal voltages and energy levels. Circuit designs that embody these components must conform with applicable safety requirements. Precautions must be taken to prevent accidental contact with power-line potentials. Do not connect grounded test equipment. The use of an isolation transformer is recommended during circuit development and breadboarding.
Because reliability can be affected adversely by improper storage environments and handling methods, please observe the following cautions. Cautions for Storage Ensure that storage conditions comply with the standard temperature (5C to 35C) and the standard relative humidity (around 40 to 75%); avoid storage locations that experience extreme changes in temperature or humidity. Avoid locations where dust or harmful gases are present and avoid direct sunlight. Reinspect for rust in leads and solderability of products that have been stored for a long time. Cautions for Testing and Handling When tests are carried out during inspection testing and other standard test periods, protect the products from power surges from the testing device, shorts between adjacent products, and shorts to the heatsink. Remarks About Using Silicone Grease with a Heatsink When silicone grease is used in mounting this product on a heatsink, it shall be applied evenly and thinly. If more silicone grease than required is applied, it may produce stress. Volatile-type silicone greases may produce cracks after long periods of time, resulting in reduced heat radiation effect. Silicone grease with low consistency (hard grease) may cause cracks in the mold resin when screwing the product to a heatsink. Our recommended silicone greases for heat radiation purposes, which will not cause any adverse effect on the product life, are indicated below: Type G746 YG6260 Suppliers Shin-Etsu Chemical Co., Ltd. GE Toshiba Silicone Co., Ltd.
SC102 Dow Corning Toray Silicone Co., Ltd. Soldering When soldering the products, please be sure to minimize the working time, within the following limits: 2605C 10 s 3505C 3 s Soldering iron should be at a distance of at least 1.5 mm from the body of the products Electrostatic Discharge When handling the products, operator must be grounded. Grounded wrist straps worn should have at least 1 M of resistance to ground to prevent shock hazard. Workbenches where the products are handled should be grounded and be provided with conductive table and floor mats. When using measuring equipment such as a curve tracer, the equipment should be grounded. When soldering the products, the head of soldering irons or the solder bath must be grounded in other to prevent leak voltages generated by them from being applied to the products. The products should always be stored and transported in our shipping containers or conductive containers, or be wrapped in aluminum foil. Assembly During soldering or other operations, the interior frame temperature of the device should never exceed 105C. Recommended screw torque through the mounting tab is 0,588 to 0.785 N m (6 to 8 kgf cm)
13
STR-W6735
The products described herein are manufactured in Japan by Sanken Electric Co., Ltd. for sale by Allegro MicroSystems, Inc. Sanken and Allegro reserve the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the performance, reliability, or manufacturability of its products. Therefore, the user is cautioned to verify that the information in this publication is current before placing any order. When using the products described herein, the applicability and suitability of such products for the intended purpose shall be reviewed at the users responsibility. Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to society due to device failure or malfunction. Sanken products listed in this publication are designed and intended for use as components in general-purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Their use in any application requiring radiation hardness assurance (e.g., aerospace equipment) is not supported. When considering the use of Sanken products in applications where higher reliability is required (transportation equipment and its control systems or equipment, fire- or burglar-alarm systems, various safety devices, etc.), contact a company sales representative to discuss and obtain written confirmation of your specifications. The use of Sanken products without the written consent of Sanken in applications where extremely high reliability is required (aerospace equipment, nuclear power-control stations, life-support systems, etc.) is strictly prohibited. The information included herein is believed to be accurate and reliable. Application and operation examples described in this publication are given for reference only and Sanken and Allegro assume no responsibility for any infringement of industrial property rights, intellectual property rights, or any other rights of Sanken or Allegro or any third party that may result from its use. Copyright 2006 Allegro MicroSystems, Inc. This datasheet is based on Sanken datasheet SSE22935
14

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STR-W6735 Quasi-Resonant Topology Primary Switching Regulators

Features and Benefits

Continued on the next page

Package: 6-pin TO-220

GND Standby ON/OFF LowB S2

Standby Out GND

Quasi-Resonant Topology Primary Switching Regulators

Absolute Maximum Ratings at TA = 25C

Quasi-Resonant Topology Primary Switching Regulators

+ Start Stop Burst

Bottom Selector Counter

Name D NC S/GND VCC SS/OLP FB OCP/BD Drain Clipped

Description MOSFET drain No connection MOSFET source and ground

Figure 1 MOSFET Safe Operating Area Derating Curve

Safe Operating Area Temperature Derating Coefficient (%)

80 Drain Current, ID (A)

Figure 2 MOSFET Safe Operating Area

it t lim on) ( rren Cu to R DS due

Drain-to-Source Voltage, VDS (V)

Quasi-Resonant Topology Primary Switching Regulators

Figure 3 MOSFET Avalanche Energy Derating Curve

Figure 4 Transient Thermal Resistance

0.001 25 50 75 100 125 150 Channel Junction Temperature, TJ (C)

100 Time, t (s)

Figure 5 MOSFET Power Dissipation versus Temperature

25 Power Dissipation, PD1 (W) With infinite heatsink PD1 = 28.7 W at TA

Without heatsink PD1 = 1.3 W at TA 0 20 40 60 80 100 120 140 160

Ambient Temperature, TA (C)

Quasi-Resonant Topology Primary Switching Regulators

ELECTRICAL CHARACTERISTICS for MOSFET, valid at TA = 25C, unless otherwise specified

Quasi-Resonant Topology Primary Switching Regulators

20 20 015 10.2 10.2 15 20 20 20 5 030 VCC(OFF) 0.3 306 1 6 1 4

Quasi-Resonant Topology Primary Switching Regulators

Quasi-Resonant Topology Primary Switching Regulators

9V V1-3 VCC 10V TON

Quasi-Resonant Topology Primary Switching Regulators

MOSFET MOSFET measuring equipment

IL IL VDS VDD 0 T1 VCC Avalanche energy tester VD SPeak

VDS Peak VDS Peak VDD

4.7k VDS(ON) IDS 0.1 F RDS(ON)=VDS(ON)/IDS 20V

Quasi-Resonant Topology Primary Switching Regulators

Quasi-Resonant Topology Primary Switching Regulators

Branding 2.8 MAX

2.6 0.1 Terminal dimension at case surface 5.0 0.5

6P1.27 0.15 = 7.62 0.15 Terminal dimensions at case surface

5.08 0.6 Terminal dimension at lead tips

4.2 0.2 2.8 0.2

Quasi-Resonant Topology Primary Switching Regulators

5.1 9 R0.6 8.9 9.50.1 (15.4)

Side marked ANTISTATIC

Carton (side view)

Quasi-Resonant Topology Primary Switching Regulators

Quasi-Resonant Topology Primary Switching Regulators

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