A Non-Contact Type RF MEMS Switch to Remove Stiction Problem

Prof. V.M. PandhariPande

Director, CEME, Osmania University, Hyderabad, India [email protected] K.KumaraSwamy Research Asst., CEME, Osmania University, Hyderabad, India [email protected] I.Vijaya Lakshmi B.Tech student, ECE SMEC, JNTU H Hyderabad, India [email protected] V.Anurag B.Tech student, ECE SMEC, JNTU H Hyderabad, India [email protected]

Abstract The continuously evolving MEMS technology for

RF/microwave applications poses issues regarding new reliability and lifetime estimation. This paper presents a noncontact type RF MEMS switch which is free from stiction and microwelding problems, The switch is developed in Comsol Multiphysics and is a capacive shunt type using a variation of the capacitance between signal line and ground lines. The capacitance is precisely regulated by comb-drive actuators. This concept is simple, but the design requires a precise mechanical motion to be achieved in switch fabrication. The mechanical structure of the proposed switch is made of single crystal silicon (SCS). Therefore, these structures demonstrate excellent mechanical performance, no warping, no predeformation and high strength. Keywords-Non-contact-type, radio-frequency microelectromechinical systems (MEMS) switch, capacitors, single crystal silicon (SCS) (RF) variable

I.

INTRODUCTION

RF microelectromechanical system (MEMS) technology is an emerging subarea of MEMS technology that is revolutionizing RF and microwave applications. RF MEMS switch is the basic building blocks for a variety of new RF MEMS circuits. These switches have demonstrated outstanding RF performance, very low insertion loss, and high isolation [1], [2]. In addition, they operate at ultra-low power levels with excellent linearity and extremely low signal distortion. Such features make them very attractive for modern radar and communications applications. RF MEMS circuits such as variable capacitors and phase shifters built upon RF MEMS switches have demonstrated superiority over existing ones [3], [4]. Stability in one or both of the states is achieved with or without applying an external energy source, and the transition between the two states is controlled by imposing or releasing the external effort. RF MEMS switches can, among others, be classified by their actuation principle, by the circuit configuration, the fabrication technology or by the intended application. There are two basic switches used in RF to millimeter-wave circuit design: the shunt switch and the series switch. In Electrostatically actuated series switches with metal contacts, a cantilever or membrane with a switching metal contact bar vertically opens or closes the signal line. Switches of this category are normally off, and the incoming
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RF wave is reflected by the interrupted signal line in the offstate. In the on state, the signal can propagate over the metal contact bar short circuiting the gap between the input and the output line. This switch type is capable of switching DC to RF signals and is both in its fabrication and in its reliability more complicated than the next type, mainly because of its metal contacts [5]. In Electrostatically actuated capacitive shunt switches, a metal bridge or membrane is connected to RF ground and moving vertically above the isolated signal line. The switch is normally on, when its in up position and in the down position, the bridge capacitively short circuits the signal line to the RF ground. Thus, in the down-state (off- state), the signal propagates via the bridge to the ground and the isolation mainly depends on the parasitic inductance of the whole ground path. This type of switch is basically not suitable for low frequency signals. It is relatively simple in its fabrication, very fast with a switching time of only a few microseconds, and very small compared to the metal contact switches which need a stronger actuator to obtain the necessary contact and opening forces [6],[21]. The ideal series switch results in an open circuit in the tline when no bias voltage is applied (up-state position), and it results in a short circuit in the t-line when a bias voltage is applied (down-state position). Ideal series switches have infinite isolation in the up-state position and have zero insertion loss in the down-state position. MEMS series switches are used extensively for 0.1- to 40-GHz applications. They offer high isolation at RF frequencies, around 50 dB to 60 dB at 1 GHz and rising to 20 to 30 dB at 20 GHz. In the down-state position, they result in very low insertion loss, around 0.1 to 0.2 dB at 0.1 to 40 GHz. The shunt switch is placed in shunt between the t-line and ground; and depending on the applied bias voltage, it either leaves the t-line undisturbed or connects it to ground. Therefore, the ideal shunt switch results in zero insertion loss when no bias is applied (up-state position) and infinite isolation when bias is applied (down-state position). Shunt capacitive switches are more suited for higher frequencies (5100 GHz). A well-designed shunt capacitive switch results in low insertion loss (0.04 to 0.1 db at 5-50 GHz) in the up-state position and acceptable isolation (more than 20 dB at 1050 GHz) in the down-state position [6]. But a problem of stiction might occur in the low-K beams which might be due to charging effects or watervapour effects.

Figure 1. Schematic diagram of the proposed non-contact-type RF MEMS switch.

Figure 2. ON/OFF mechanism of the proposed switch. (a) ON-state signal flow (variable capacitors are not actuated). (b) OFF-state signal flow (variable capacitors are actuated). TABLE I. RELIABILITY PROBLEMS OF THE CONTACT-TYPE SWITCHES Switch Type Metal Contacting switch Capacitive coupling switch Problems Increasing Contact resistance Microwelding phenomenon Stictin between the dielectric layer and the metal Charge injection and charge trapping in the dielectric layers

After the first demonstration of micromachined membrane switch in 1979, many contact-type RF MEMS switches have been developed using various actuation designs, including electrostatic, electromagnetic, electrostaticelectromagnetic, electricthermal, and piezoelectric actuators [7][15]. Such switches, from a switch contact perspective, are categorized into metal contacting and capacitive coupling switches. The metal contact switch achieves an ohmic contact between two metal electrodes. The capacitive coupling switch has a thin dielectric film and an air gap between the two metallic contact surfaces. The air gap is electromechanically adjusted to achieve a capacitance change between the up and down states. However, the reliability of these switches is limited by microwelding and stiction problems in the contact areas. In the metal contacting switch, the direct contact between the two metal layers causes increasing contact resistance and a microwelding problem after repeated actuations. In addition, the stiction between the dielectric layer and the metal, due to the large contact area of the switch, dominates the reliability of the capacitive coupling switch. The major stiction force is due to the charge injection and charge trapping in the dielectric layers. It can cause the switch to either stick in the down-state position or result in an increase in the pull-down voltage [18][21], [24]. Typical reliability problems of a contact-type switch are summarized in Table I:

In order to solve these problems, we have proposed a noncontact- type RF MEMS switch. In the present configuration, the microwelding and stiction problems in the contact switches are eliminated. This elimination is because the proposed switch is built with variable capacitor structures containing small air gaps instead of a direct or indirect contact pad. The isolated silicon stopper is designed to maintain these small gaps between combs of variable capacitor structures [25]-[27]. The mechanical structures of the proposed switch are made of single crystal silicon (SCS). Therefore, these structures demonstrate excellent mechanical performance, high strength, no warping, and no pre-deformation [22].

Figure 3. Post Processing mode (ON state).

Figure 5. Post Processing mode (OFF state).

Figure 4. ON state graph showing output voltage.

Figure 6. OFF state graph showing output voltage.

II.

DESIGN OF NON-CONTACT-TYPE

The proposed switch is a capacitive shunt type operated by the change of capacitance between the signal line and ground lines. As shown in Figure 1, the switch consists of a coplanar waveguide (CPW) line and variable capacitors. A couple of comb-drive actuators are linked with variable capacitors for precision actuation of the capacitor structures. The switching mechanism of the proposed switch is shown in Figure 2. [25] In the ON state, the variable capacitors are not actuated and the input signal passes through the CPW line, as shown in Figure 2(a). In the OFF state, the capacitance of the actuated capacitors is changed and it prevents the signal from reaching the output port, as shown in Figure 2(b). It is to be noted that there are small air gaps between the capacitors even in the OFF state. Therefore, the capacitors do not touch each other. Thus, the proposed switch is free from the stiction and microwelding problems of a contact-type switch.

In order to have a sufficient capacitance of several hundred femtofarads in the OFF state, the comb structures are used in the variable capacitors and CPW line [25]. III. RESULTS In figure the blue color indicates the 0V and red color indicates 5V. In ON state, the actuators are not actuated (0V) and the signal is flowing from input port to output port directly, which is indicated by the red color in the entire signal line. The signal given at the input port is a 5V DC. The graphs indicate the amount of signal which is coming at the output port. When the actuators are actuated then the switch is in OFF state as shown in the Figure 5. Here the actuators are actuated by 25V DC and the input signal is 5 V DC. Figure 4 and Figure 6 shows the signal at the output port. From the graph it shows that the signal at the output port when the switch is in OFF state is 1.8V, because the actuators are actuated by 25V, then the distance between the electrodes reduces, which gives a high impedance path in the signal line.

IV.

CONCLUSION

[9]

The term RF MEMS encompasses several distinct types of devices, including RF switches and relays, resonators, varactors (variable capacitors) and inductors. This makes a compelling argument to invest in pilot production to tighten the yield and reliability while continuing the development of more robust RF MEMS. In this paper, we described our development of a noncontacttype RF MEMS switch, to remove the stiction problem between the contact surfaces to open and close a switch.. This switch is a capacitive shunt type operated by the change in capacitance between the signal line and ground lines. The switching mechanism is unique due to the small air gaps between the capacitive surfaces. Therefore, the normal problems like Ohmic losses of the contact switch do not occur in this switch. To realize the large and precise mechanical motion of the switch, the SSOI process is to be used for switch fabrication. The actuation voltage of the fabricated switch is 25 V, and the actuation stroke is 25 m. The output voltage in OFF state is 1.8V, which can be further reduced to 0V with more compact fabrication methods. ACKNOWLEDGMENT The authors would like to thank Dr. V.M.Pandharipande and K.KumaraSwamy of Centre for Excellence in Microwave Engineering, Osmania University, Hyderabad and Dr.H.L.Suryanarayana and J.Rajeshwar Goud of St.Martins Engineering College, Hyderabad. The authors would also like to thank IISC Bangalore and AMPL, Hyderabad for providing necessary softwares. REFERENCES
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