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    7.scaling and Geometry Affects

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    87krishna331
    - MOSFET scaling and reducing device dimensions (known as MOSFET scaling) allows for higher chip density and functionality by shrinking transistor sizes. - Geometric ratios are preserved during scaling to reduce total chip area while increasing overall functional density. - Scaling faces physical limitations and causes changes to MOSFET operational characteristics and effects like short channel effects.

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    7.scaling and Geometry Affects

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    87krishna331
    278 views3 pages
    - MOSFET scaling and reducing device dimensions (known as MOSFET scaling) allows for higher chip density and functionality by shrinking transistor sizes. - Geometric ratios are preserved during scaling to reduce total chip area while increasing overall functional density. - Scaling faces physical limitations and causes changes to MOSFET operational characteristics and effects like short channel effects.

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    7.Scaling and Geometry Affects

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    - MOSFET scaling and reducing device dimensions (known as MOSFET scaling) allows for higher chip density and functionality by shrinking transistor sizes. - Geometric ratios are preserved during scaling to reduce total chip area while increasing overall functional density. - Scaling faces physical limitations and causes changes to MOSFET operational characteristics and effects like short channel effects.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    278 views3 pages

    7.scaling and Geometry Affects

    Uploaded by

    87krishna331
    - MOSFET scaling and reducing device dimensions (known as MOSFET scaling) allows for higher chip density and functionality by shrinking transistor sizes. - Geometric ratios are preserved during scaling to reduce total chip area while increasing overall functional density. - Scaling faces physical limitations and causes changes to MOSFET operational characteristics and effects like short channel effects.

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    • Design of high-density chips require a

    packing density as high as possible.


    • Transistors fabricated have sizes as
    small as possible.
    MOSFET Scaling and • The systematic reduction in the
    Small Geometry Effects dimensions of devices is referred to
    as MOSFET scaling.
    • It causes change in MOSFET
    operational characteristics.
    • There are physical limitations to the
    extent of scaling.

    • Geometric ratios found in larger Reduction of min feature size for a


    devices are usually preserved. typical CMOS gate array process:
    • It results in total area reduction
    • Hence gives increased overall Year 1985 1987 1989 1991 1993 1995 1997 1999
    functional density of the chip.
    Feature 2.5 1.7 1.2 1.0 0.8 0.5 0.35 0.25
    • Full Scaling: Constant field scaling Size (µm)
    • Constant voltage scaling
    • Scaling factor S>1
    • Scaled device dimensions = larger S ranges from 1.2 to 1.5 for every successive
    device dimensions divided by S generations.

    •Full Scaling :

    *Aims at preserving the magnitude of


    internal electric fields in the
    MOSFET.
    *For this, all potentials must be
    scaled by same scaling factor.
    *Affects the threshold voltage.
    *So, the charge densities must be
    increased in the same proportion.

    1
    The influence of full scaling on
    C-V characteristics of MOSFET:
    (Assumed that mobility is not affected significantly by scaling)

    • Significant power reduction is most


    attractive feature of full scaling.
    • However power density per unit area • Constant voltage scaling:
    remains unchanged. *Peripheral and interfacing circuitry may
    require certain voltage levels and hence full
    scaling is not advisable.
    *Constant voltage scaling is preferred here.
    *All dimensions of MOSFET are scaled.
    However, the power supply voltage and the
    terminal voltages remain unchanged.
    *To preserve the charge-field relations, doping
    densities must be increased.

    2
    Short Channel Effects
    Short Channel Device:
    Channel length ≈ Depletion region thickness
    OR
    Effective channel length ≈ Source / Drain junction Depth

    Attributes:

    1. Limitations imposed on electron drift


    characteristics in the channel
    2. Modification of threshold voltage due to the
    shortening of channel length

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