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    P-N Junction Characteristics

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    Ashvani Shukla
    1. A p-n junction diode is formed when an intrinsic semiconductor is doped on one side with an acceptor material to make it p-type and on the other side with a donor material to make it n-type. 2. In an unbiased p-n junction, electrons diffuse from the n-side to the p-side and holes diffuse from the p-side to the n-side, leaving an electron depletion region. 3. The current-voltage characteristics of a p-n junction diode show very low reverse bias current and high forward bias current above the threshold voltage.

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    Download as PPTX, PDF, TXT or read online from Scribd

    P-N Junction Characteristics

    Uploaded by

    Ashvani Shukla
    145 views9 pages
    1. A p-n junction diode is formed when an intrinsic semiconductor is doped on one side with an acceptor material to make it p-type and on the other side with a donor material to make it n-type. 2. In an unbiased p-n junction, electrons diffuse from the n-side to the p-side and holes diffuse from the p-side to the n-side, leaving an electron depletion region. 3. The current-voltage characteristics of a p-n junction diode show very low reverse bias current and high forward bias current above the threshold voltage.

    Original Description:

    characteristics of diode

    Original Title

    P-N JUNCTION CHARACTERISTICS.pptx

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    1. A p-n junction diode is formed when an intrinsic semiconductor is doped on one side with an acceptor material to make it p-type and on the other side with a donor material to make it n-type. 2. In an unbiased p-n junction, electrons diffuse from the n-side to the p-side and holes diffuse from the p-side to the n-side, leaving an electron depletion region. 3. The current-voltage characteristics of a p-n junction diode show very low reverse bias current and high forward bias current above the threshold voltage.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    145 views9 pages

    P-N Junction Characteristics

    Uploaded by

    Ashvani Shukla
    1. A p-n junction diode is formed when an intrinsic semiconductor is doped on one side with an acceptor material to make it p-type and on the other side with a donor material to make it n-type. 2. In an unbiased p-n junction, electrons diffuse from the n-side to the p-side and holes diffuse from the p-side to the n-side, leaving an electron depletion region. 3. The current-voltage characteristics of a p-n junction diode show very low reverse bias current and high forward bias current above the threshold voltage.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    of 9

    P-N JUNCTION

    CHARACTERISTI
    CS
    BY

    ASHVANI SHUKLA
    MANAGER(C&I)
    BGR ENERGY

    CHARACTERISTICS OF P-N
    JUNCTION
    P-N junction diode is the most fundamental and the simplest

    electronics device. When one side of an intrinsic semiconductor is


    doped with acceptor i.e, one side is made p-type by doping with

    n-type material, a p-n junction diode is formed. This is a two

    terminal device. It appeared in 1950s.

    P-N junction can be step graded or linearly graded. In step

    graded the concentration of dopants both, in n - side and in p side are constant up to the junction. But in linearly graded
    junction, the doping concentration varies almost linearly with the
    distance from the junction.

    When the P-N diode is in unbiased condition that is no voltage is applied

    across it, electrons will defuse through the junction to p - side and holes will
    defuse through the junction to n - side and they combine with each other.

    Thus the acceptor atom near the p - side and donor atom near n side are

    left unutilized. An electron field is generated by these uncovered charges.


    This opposes further diffusion of carriers. So, no movement of region is
    known as space charge or depletion region.

    If, we apply forwards bias to the p-n junction diode. That means if

    positive side of the battery is connected to the p side, then the depletion
    regions width decreases and carriers flow across the junction. If the bias is
    reversed the depletion width increases and no charge can flow across the
    junction.

    P-N Junction Diode Characteristics


    Let's a voltage V is applied across a p-n junction and total current I, flows

    through the junction. It is given as. I = IS[exp(eV/KBT) - 1] Here, IS =


    reverse saturation current e = charge of electron = emission co-efficient
    KB = Boltzmann constant

    T = temperature The current voltage characteristics plot is given below.

    The current voltage characteristics

    When V is positive the junction is forward biased and when V is negative, the
    junction is reversing biased. When V is negative and less than V TH, the current is
    very small. But when V exceeds VTH, the current suddenly becomes very high. The
    voltage VTH is known as threshold or cut in voltage. For Silicon diode VTH = 0.6 V.
    At a reverse voltage corresponding to the point P, there is abrupt increment in

    reverse current. The PQ portion of the characteristics is known as breakdown


    region.

    P-N Junction Band Diagram


    For an n-type semiconductor, the Fermi level E F lies near the conduction band

    edge. EC but for an p - type semiconductor, EF lies near the valance band edge
    EV

    Now, when a p-n junction is built, the Fermi energy E F attains a constant

    value. In this scenario the p-sides conduction band edge. Similarly nside
    valance band edge will be at higher level than E cn, n-sides conduction band
    edge of p - side. This energy difference is known as barrier energy. The
    barrier energy is EB = Ecp - Ecn = Evp - Evn

    If we apply forward bias voltage V, across junction then the barrier energy

    decreases by an amount of eV and if V is reverse bias is applied the barrier


    energy increases by eV.

    P-N Junction Diode Equation


    The p-n junction diode equation for an ideal diode is

    given below
    I = IS[exp(eV/KBT) - 1]

    Here, IS = reverse saturation current e = charge of

    electron KB = Boltzmann constant T = temperature

    For a normal p-n junction diode, the equation

    becomes
    I = IS[exp(eV/KBT) - 1]

    Here, = emission co-efficient, which is a number

    between 1 and 2, which typically increases as the


    current increases.

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