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    325 Lab 11 Report

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    This lab report summarizes experiments characterizing a BJT transistor. Students measured the transistor's behavior under varying gate-source voltages and temperatures. They analyzed the transistor in common source and drain configurations, measuring small signal gain, input impedance, and -3dB frequencies. Main challenges were correctly connecting the MOSFET and limited lab time due to a school break. The experiments demonstrated linear relationships between drain current and gate-source voltage, and how individual circuit nodes influence each other.

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    © All Rights Reserved
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    325 Lab 11 Report

    Uploaded by

    api-241454978
    895 views5 pages
    This lab report summarizes experiments characterizing a BJT transistor. Students measured the transistor's behavior under varying gate-source voltages and temperatures. They analyzed the transistor in common source and drain configurations, measuring small signal gain, input impedance, and -3dB frequencies. Main challenges were correctly connecting the MOSFET and limited lab time due to a school break. The experiments demonstrated linear relationships between drain current and gate-source voltage, and how individual circuit nodes influence each other.

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    This lab report summarizes experiments characterizing a BJT transistor. Students measured the transistor's behavior under varying gate-source voltages and temperatures. They analyzed the transistor in common source and drain configurations, measuring small signal gain, input impedance, and -3dB frequencies. Main challenges were correctly connecting the MOSFET and limited lab time due to a school break. The experiments demonstrated linear relationships between drain current and gate-source voltage, and how individual circuit nodes influence each other.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    895 views5 pages

    325 Lab 11 Report

    Uploaded by

    api-241454978
    This lab report summarizes experiments characterizing a BJT transistor. Students measured the transistor's behavior under varying gate-source voltages and temperatures. They analyzed the transistor in common source and drain configurations, measuring small signal gain, input impedance, and -3dB frequencies. Main challenges were correctly connecting the MOSFET and limited lab time due to a school break. The experiments demonstrated linear relationships between drain current and gate-source voltage, and how individual circuit nodes influence each other.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    of 5

    Lab 11 Report

    Characterization of the BJT


    Kevin Bradshaw & Yuan Tian
    ECEN 325-503
    Instructor: Sebastian Hoyos
    December 2, 2015
    Items
    1
    2
    3
    4
    5
    6
    7

    Pre-lab
    Title Page
    Intro /Theory / Procedure
    Summary
    Experimental Results /
    Analysis / Discussion
    Problems Encountered
    Conclusion
    Questions
    Total

    Grade Assigned
    20%
    5%
    10%
    40%
    5%
    5%
    15%
    100%

    Student's Grade

    Objectives

    Understand the small signal models of the MOS amplifier


    configurations.
    Evaluate the DC operating point of a single MOS amplifier.
    Analyze the different parameters of the common source and drain
    configurations.

    Procedure
    In this lab, the MOSFET circuit (Figure 1) from the pre-lab was built with the
    values measured in the pre-lab. The input voltage was set to 10 Volts and the
    potentiometer was adjusted according to the voltage across RD (Resistance at
    the Drain terminal of the MOSFET) at approximately 5 Volts.
    Figure 1: MOSFET Circuit

    Keeping the input voltage the same, the transistor was then warmed by
    placing a thumb on the top part of this package. By doing this, the voltage at
    the drain started to rise linearly by about 0.003 Volts per second. Lastly,
    gate-source voltage was changed from 1 to 3 V in increments of 0.1 V in
    order to sweep the input voltage. These observations are recorded in Table 1.
    Figure 2: Common Source Amplifier

    Then the circuit shown in Figure 2 was constructed with the measurements
    used in the prelab and a 10 kHz, 10 mV input was applied to it. The small
    signal gain and input impedance is recorded in Table 2. The capacitor
    connected to the source was removed and gain was measured to be about
    2.5 Volts. After the capacitor was reconnected, the frequency was swept at
    the input. The low -3dB frequency was approximately 100 Hz while the high
    -3dB frequency was approximately 500 kHz. Lastly, the distortion
    performance of the Common Source configuration was obtained. Section 503
    of the class only did steps 1 through 9 of this lab.
    Data Tables
    Table 1: MOSFET Gate Source Voltage
    Sweep

    VGS [V]

    VD [V]

    ID [A]

    gm [1/]

    1
    1.1
    1.2
    1.3
    1.4
    1.5
    1.6
    1.7
    1.8
    1.9
    2
    2.1
    2.2
    2.3
    2.4
    2.5
    2.6
    2.7
    2.8
    2.9
    3

    0.0026
    0.011
    0.018
    0.04
    0.18
    0.29
    0.4
    0.55
    0.9
    1.1
    1.4
    1.8
    2.1
    2.4
    2.85
    3.5
    3.95
    4.5
    5.1
    5.75
    6.1

    5E-07
    2.2E-06
    3.6E-06
    8.1E-06
    3.6E-05
    5.9E-05
    8.2E-05
    0.0001
    0.00018
    0.00023
    0.00029
    0.00037
    0.00043
    0.00049
    0.00058
    0.0007
    0.0008
    0.0009
    0.00102
    0.0012
    0.00123

    -2.18E-06
    -1.16E-05
    -2.60E-05
    -9.40E-05
    -0.00095
    0.0047
    0.0013
    0.00098
    0.0011
    0.0016
    0.0011
    0.0016
    0.00116
    0.00116
    0.00124
    0.0014
    0.00141
    0.00147
    0.00155
    0.00161
    0.0016

    Applicable Calculations
    r ds =

    1
    ID
    gm= (V GS V T )

    Discussion
    1. Pspice and Experimental Results:
    As we changed the gate source voltage, the drain current also changed
    very close to what the simulations from the pre-lab showed.
    2. Threshold Voltage Relationship
    The threshold voltage is decreased while warming the transistor with a
    finger.
    3. Input Impedance, Small Signal Voltage Gain, and -3dB Frequencies.
    Input impedance and the -3dB frequencies can be found in the
    procedure. Table 1 shows the calculated values for the
    transconductance and below is a graph of the drain current vs. the
    gate-source voltage.
    Figure 3: Drain Current Vs. Gate Source Voltage
    0
    0
    0
    0
    0
    0
    0
    Drain Current 0

    Gate Source Voltage

    Problems Encountered
    The main problem for this lab was getting the correct connections for the
    MOSFET on the breadboard. After looking at the proper datasheet for the
    CD4007 Transistor, we were able to connect the MOSFET correctly. Also, we
    didn't have the proper time to complete everything because section 503 had
    the actual lab day during a school break.
    Conclusion
    The purpose of this lab was to understand the fundamental concepts and
    characteristics of MOSFET circuits. We learned how to analyze MOSFET's in
    three different modes of operation by using circuit analysis tools that have
    been used before. We calculated the relative parameters to determine how
    each individual node influenced each other in the circuit. The graph of drain
    current and the gate-source voltage showed us the linear relationship BJT's
    are very important in control systems because they bridge the gap between
    large loads and small loads.

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