NPN Triple Diffused Ksd5072 Planar Silicon Transistor

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KSD5072
High Collector-Base Voltage (VCBO=1500V) High Switching Speed (tF. max=0.4s)

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR

COLOR TV HORIZONTAL OUTPUT APPLICATION (DAMPER DIODE BUILT IN)

TO-3PF

ABSOLUTE MIXIMUM RATING


Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Peak)

Symbol

Rating 1500 800 6 5 16 60 150 -55 ~ 150

Unit V V V A A W

Collector Dissipation (TC=250C) Junction Temperature Storage Temperature

ELECTRICAL CHARACTERISTICS (TC=25C)


Characteristic Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Current Gain Bandwidth Product Damper Diode Turn On Voltage Fall Time ICBO IEBO hFE VCE(sat) VBE(sat) fT VF tF

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C C 1.Base 2.Collector 3.Emitter Test Condition Min 40 8 Typ Max 10 200 5 1.5 2 0.4 Unit VCB = 800V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 1A IC = 4A, IB = 0.8A IC = 4A, IB = 0.8A VCE = 10V, IC = 1A IF = 5A IC = 4A, IB1 = 0.8A IB2 = - 1.6A, VCC = 200V RL = 50 3 3 A mA V V MHz V s Rev B.

VCBO VCEO VEBO IC IC PC TJ T STG

1999 Fairchild Semiconductor Corporation

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KSD5072

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR

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KSD5072

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR

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