TPA6101A2 50mW ULTRALOWVOLTAGE, FIXEDGAIN STEREO HEADPHONE AUDIO POWER AMPLIFIER

SLOS331C AUGUST 2000 REVISED MARCH 2007

D D D D D D D D D D

Minimal External Components Required 1.6-V to 3.6-V Supply Voltage Range 50-mW Stereo Output Low Supply Current . . . 0.75 mA Low Shutdown Current . . . 50 nA Gain Set Internally to 2 dB Pop Reduction Circuitry Internal Mid-Rail Generation Thermal and Short-Circuit Protection Surface-Mount Packaging 3-mm y 5-mm MSOP Package (DGN) 5-mm y 6-mm SOIC Package (D) 2,5-mm y 2,5-mm MicroStar JuniorE BGA Package (ZQY)

D or DGK PACKAGE (TOP VIEW)

BYPASS GND SHUTDOWN IN2

1 2 3 4

8 7 6 5

IN1 VO 1 VDD VO 2

ZQY PACKAGE (TOP VIEW)

BYPASS GND SHUTDOWN IN2

(A1) (B1) (C1) (D1)

(A4) (B4) (C4) (D4)

IN1 VO 1 VDD VO 2

description

GND

The TPA6101A2 is a stereo audio power amplifier packaged in an 8-pin SOIC package, an 8-pin MSOP package, or a 15-ball BGA package, capable of delivering 50 mW of continuous RMS power per channel into 16- loads. Amplifier gain is internally set to 2 dB (inverting) to save board space by eliminating six external resistors. The TPA6101A2 is optimized for battery applications because of its low supply current, shutdown current, and THD+N. To obtain the low-supply-voltage range, the TPA6101A2 biases BYPASS to VDD/4. When driving a 16- load with 40-mW output power from 3.3 V, THD+N is 0.08% at 1 kHz, and less than 0.2% across the audio band of 20 Hz to 20 kHz. For 30 mW into 32- loads, the THD+N is reduced to less than 0.06% at 1 kHz, and is less than 0.3% across the audio band of 20 Hz to 20 kHz.

typical application circuit

VDD RF 80 k RI 80 k BYPASS CB CI From Shutdown Control Circuit NOTE: All internal resistor values are 20%. SHUTDOWN RF 80 k RI 80 k 80 k 80 k VDD/4 + VO1 CC

VDD CS

Audio Input CI

IN 1

Audio Input

IN 2

+ Bias Control

VO2 CC

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. MicroStar BGA is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Copyright 2007, Texas Instruments Incorporated

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TPA6101A2 50mW ULTRALOWVOLTAGE, FIXEDGAIN STEREO HEADPHONE AUDIO POWER AMPLIFIER

AVAILABLE OPTIONS PACKAGED DEVICE TA 40C to 85C SMALL OUTLINE (D) TPA6101A2D MSOP (DGK) TPA6101A2DGK BGA (ZQY) TPA6101A2ZQYR MSOP SYMBOLIZATION AJM BGA SYMBOLIZATION AAQI

Terminal Functions
TERMINAL NO. NAME BYPASS GND IN1 IN2 SHUTDOWN VDD VO1 VO2 D, DGK 1 2 8 4 3 6 7 5 ZQY A1 B1 A4 D1 C1 C4 B4 D4 I I I I O O Tap to voltage divider for internal mid-supply bias supply. BYPASS is set at VDD/4. Connect to a 0.1-F to 1-F low-ESR capacitor for best performance. GND is the ground connection. IN1 is the inverting input for channel 1. IN2 is the inverting input for channel 2. Active-low input. When held low, the device is placed in a low-supply-current mode. VDD is the supply voltage terminal. VO1 is the audio output for channel 1. VO2 is the audio output for channel 2. I/O DESCRIPTION

absolute maximum ratings over operating free-air temperature (unless otherwise noted)
Supply voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 V Input voltage, VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 V to VDD + 0.3 V Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Internally Limited Operating junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40C to 150C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65C to 150C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. DISSIPATION RATING TABLE PACKAGE D DGK ZQY TA 25C POWER RATING 710 mW 469 mW 2W DERATING FACTOR ABOVE TA = 25C 5.68 mW/C 3.75 mW/C 17.1 mW/C TA = 70C POWER RATING 454 mW 300 mW 1.28 W TA = 85C POWER RATING 369 mW 244 mW 1.04 W

MIN MAX UNIT V V V Supply voltage, VDD 1.6 3.6 High-level input voltage, VIH (SHUTDOWN) Low-level input voltage, VIL (SHUTDOWN) Operating free-air temperature, TA 0.6 VDD 0.25 VDD 40 85 C 2

recommended operating conditions

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dc electrical characteristics at TA = 25C, VDD = 3.6 V (unless otherwise noted)
PARAMETER VOO PSRR IDD IDD(SD) |IIH| |IIL| ZI Output offset voltage Power supply rejection ratio Supply current Supply current in SHUTDOWN mode High-level input current (SHUTDOWN) Low-level input current (SHUTDOWN) Input impedance TEST CONDITIONS AV = 2 dB VDD = 3 V to 3.6 V SHUTDOWN = 3.6 V SHUTDOWN = 0 V VDD = 3.6 V, VI = VDD VDD = 3.6 V, VI = 0 V 80 MIN TYP 5 72 0.75 50 1.5 250 1 1 MAX 40 UNIT mV dB mA nA A A k

ac operating characteristics, VDD = 3.3 V, TA = 25C, RL = 16

PARAMETER G PO THD+N BOM kSVR SNR Vn Gain Output power (each channel) Total harmonic distortion + noise Maximum output power BW Supply ripple rejection ratio Signal-to-noise ratio Noise output voltage (no-noise weighting filter) THD 0.1%, PO = 45 mW, THD < 0.5% f = 1 kHz PO = 50 mW f = 1 kHz 20 Hz20 kHz TEST CONDITIONS MIN TYP 2 50 0.4% > 20 47 86 45 kHz dB dB V(rms) MAX UNIT dB mW

ac operating characteristics, VDD = 3.3 V, TA = 25C, RL = 32

PARAMETER G PO THD+N BOM kSVR SNR Vn Gain Output power (each channel) Total harmonic distortion + noise Maximum output power BW Supply ripple rejection ratio Signal-to-noise ratio Noise output voltage (no-noise weighting filter) THD 0.1%, PO = 30 mW, THD < 0.4% f = 1 kHz PO = 30 mW f = 1 kHz 20 Hz20 kHz TEST CONDITIONS MIN TYP 2 35 0.4% > 20 47 86 50 kHz dB dB V(rms) MAX UNIT dB mW

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dc electrical characteristics at TA = 25C, VDD = 1.6 V (unless otherwise noted)
PARAMETER VOO PSRR IDD IDD(SD) |IIH| |IIL| ZI Output offset voltage Power supply rejection ratio Supply current Supply current in SHUTDOWN mode High-level input current (SHUTDOWN) Low-level input current (SHUTDOWN) Input impedance TEST CONDITIONS AV = 2 dB VDD = 1.4 V to 1.8 V SHUTDOWN = 1.6 V SHUTDOWN = 0 V VDD = 1.6 V, VI = VDD VDD = 1.6 V, VI = 0 V 80 MIN TYP 5 80 0.65 50 1.2 250 1 1 MAX 40 UNIT mV dB mA nA A A k

ac operating characteristics, VDD = 1.6 V, TA = 25C, RL = 16

PARAMETER G PO THD+N BOM kSVR SNR Vn Gain Output power (each channel) Total harmonic distortion + noise Maximum output power BW Supply ripple rejection ratio Signal-to-noise ratio Noise output voltage (no-noise weighting filter) THD 0.5%, PO = 9.5 mW, THD < 1% f = 1 kHz PO = 10 mW f = 1 kHz 20 Hz20 kHz TEST CONDITIONS MIN TYP 2 10 0.06% > 20 47 82 32 kHz dB dB V(rms) MAX UNIT dB mW

ac operating characteristics, VDD = 1.6 V, TA = 25C, RL = 32

PARAMETER G PO THD+N BOM kSVR SNR Vn Gain Output power (each channel) Total harmonic distortion + noise Maximum output power BW Supply ripple rejection ratio Signal-to-noise ratio Noise output voltage (no-noise weighting filter) THD 0.5%, PO = 6.5 mW, THD < 1% f = 1 kHz PO = 7.5 mW f = 1 kHz 20 Hz20 kHz TEST CONDITIONS MIN TYP 2 7.5 0.05% > 20 47 84 32 kHz dB dB V(rms) MAX UNIT dB mW

TYPICAL CHARACTERISTICS Table of Graphs

FIGURE vs Frequency THD+N PO kSVR Vn Total harmonic distortion plus noise Output power Supply ripple rejection ratio Output noise voltage Crosstalk Closedloop gain and phase IDD PD Supply current Power dissipation vs Output power vs Output voltage vs Load resistance vs Frequency vs Frequency vs Frequency vs Frequency vs Supply voltage vs Output power 1, 3, 5, 7, 9, 11 2, 4, 6, 8, 10, 12 13, 14 15, 16 17, 18 19, 20 21, 22 23, 24, 25, 26 27 28

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TYPICAL CHARACTERISTICS
TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY
THD+N Total Harmonic Distortion Plus Noise % VDD = 1.6 V PO = 9.5 mW CB = 1 F RL = 16 THD+N Total Harmonic Distortion Plus Noise % 10

TOTAL HARMONIC DISTORTION PLUS NOISE vs OUTPUT POWER

10 VDD = 1.6 V CB = 1 F RL = 16 f = 1 kHz 1

0.1

0.1

0.01

0.01

0.001 20

100

1k f Frequency Hz

10 k 20 k

0.001 1 5 10 PO Output Power mW 40

Figure 1
TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY
THD+N Total Harmonic Distortion Plus Noise % VDD = 1.6 V PO = 6.5 mW CB = 1 F RL = 32 THD+N Total Harmonic Distortion Plus Noise % 10

Figure 2
TOTAL HARMONIC DISTORTION PLUS NOISE vs OUTPUT POWER
10 VDD = 1.6 V CB = 1 F RL = 32 f = 1 kHz 1

0.1

0.1

0.01

0.01

0.001 20

100

1k f Frequency Hz

10 k 20 k

0.001 1 5 10 PO Output Power mW 40

Figure 3

Figure 4

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TYPICAL CHARACTERISTICS
TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY
THD+N Total Harmonic Distortion Plus Noise % VDD = 1.6 V PO = 4.5 mW CB = 1 F RL = 50 THD+N Total Harmonic Distortion Plus Noise % 10

TOTAL HARMONIC DISTORTION PLUS NOISE vs OUTPUT POWER

10 VDD = 1.6 V CB = 1 F RL = 50 f = 1 kHz 1

0.1

0.1

0.01

0.01

0.001 20

100

1k f Frequency Hz

10 k 20 k

0.001 1 5 10 PO Output Power mW 40

Figure 5
TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY
THD+N Total Harmonic Distortion Plus Noise % THD+N Total Harmonic Distortion Plus Noise % 10 VDD = 3.3 V PO = 45 mW CB = 1 F RL = 16

Figure 6
TOTAL HARMONIC DISTORTION PLUS NOISE vs OUTPUT POWER
10 VDD = 3.3 V CB = 1 F RL = 16 f = 1 kHz 1

0.1

0.1

0.01

0.01

0.001 20

100

1k f Frequency Hz

10 k 20 k

0.001 1 10 PO Output Power mW 100 200

Figure 7

Figure 8

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TYPICAL CHARACTERISTICS
TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY
THD+N Total Harmonic Distortion Plus Noise % 10 VDD = 3.3 V PO = 30 mW CB = 1 F RL = 32 1 THD+N Total Harmonic Distortion Plus Noise %

TOTAL HARMONIC DISTORTION PLUS NOISE vs OUTPUT POWER

10 VDD = 3.3 V CB = 1 F RL = 32 f = 1 kHz

0.1

0.1

0.01

0.01

0.001 20 100 1k f Frequency Hz 10 k 20 k

0.001 1 10 PO Output Power mW 100 200

Figure 9
TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY
THD+N Total Harmonic Distortion Plus Noise % THD+N Total Harmonic Distortion Plus Noise % 10 VDD = 3.3 V PO = 20 mW CB = 1 F RL = 50

Figure 10
TOTAL HARMONIC DISTORTION PLUS NOISE vs OUTPUT POWER
10 VDD = 3.3 V CB = 1 F RL = 50 f = 1 kHz

0.1

0.1

0.01

0.01

0.001 20 100 1k f Frequency Hz 10 k 20 k

0.001 1 10 PO Output Power mW 100 200

Figure 11

Figure 12

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TPA6101A2 50mW ULTRALOWVOLTAGE, FIXEDGAIN STEREO HEADPHONE AUDIO POWER AMPLIFIER

TYPICAL CHARACTERISTICS
TOTAL HARMONIC DISTORTION PLUS NOISE vs OUTPUT VOLTAGE
THD+N Total Harmonic Distortion Plus Noise % VDD = 1.6 V RL = 10 k CB = 1 F 1 THD+N Total Harmonic Distortion Plus Noise % 10

TOTAL HARMONIC DISTORTION PLUS NOISE vs OUTPUT VOLTAGE

10 VDD = 3.3 V RL = 10 k CB = 1 F 1

0.1

0.1

0.01

0.01

0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VO Output Voltage V 0.8 0.9 1

0.001 0

0.2

0.4 0.6 0.8 1 VO Output Voltage V

1.2

1.4

Figure 13
OUTPUT POWER vs LOAD RESISTANCE
15 VDD = 1.6 V THD+N = 1% Mode = Stereo Channel 1 PO Output Power mW 100 150

Figure 14
OUTPUT POWER vs LOAD RESISTANCE
VDD = 3.6 V THD+N = 1% Mode = Stereo

12 PO Output Power mW

125

9 Channel 2 6

75

Channel 1

50 Channel 2 25

16

20

24 28 32 36 40 RL Load Resistance

44

48 50

0 16 20 24 28 32 36 40 RL Load Resistance 44 48 50

Figure 15

Figure 16

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TYPICAL CHARACTERISTICS
SUPPLY RIPPLE REJECTION RATIO vs FREQUENCY
0 k SVR Supply Ripple Rejection Ratio dB k SVR Supply Ripple Rejection Ratio dB 10 20 30 40 50 60 70 80 90 100 110 120 130 140 20 100 1k f Frequency Hz 10 k 20 k VDD = 1.6 V CB = 1 F RL = 32 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 20 VDD = 3.3 V CB = 1 F RL = 32

SUPPLY RIPPLE REJECTION RATIO vs FREQUENCY

100

1k f Frequency Hz

10 k 20 k

Figure 17
OUTPUT NOISE VOLTAGE vs FREQUENCY
100 V n Output Noise Voltage V(rms) VDD = 1.6 V CB = 1 F RL = 16 100 V n Output Noise Voltage V(rms)

Figure 18
OUTPUT NOISE VOLTAGE vs FREQUENCY
VDD = 3.3 V CB = 1 F RL = 16

10

10

1 20 100 1k f Frequency Hz 10 k 20 k

1 20 100 1k f Frequency Hz 10 k 20 k

Figure 19

Figure 20

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TYPICAL CHARACTERISTICS
CROSSTALK vs FREQUENCY
0 10 20 30 40 Crosstalk dB 50 60 70 80 90 100 110 120 130 140 20 100 1k f Frequency Hz 10 k 20 k Crosstalk dB VDD = 1.6 V PO = 4.5 mW RL = 50 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 20 100 1k f Frequency Hz 10 k 20 k VDD = 3.3 V PO = 20 mW RL = 50

CROSSTALK vs FREQUENCY

Figure 21
CLOSED-LOOP GAIN AND PHASE vs FREQUENCY
40 30 20 Closed-Loop Gain dB 10 0 Gain 10 20 30 40 50 60 10 100 1k 10 k 100 k 1M 10 M VDD = 1.6 V RL = 16 TA = 25C Phase

Figure 22

180 150 120 90 60 30 0 30 60 90 120 150 180 100 M Phase

f Frequency Hz

Figure 23

10

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TPA6101A2 50mW ULTRALOWVOLTAGE, FIXEDGAIN STEREO HEADPHONE AUDIO POWER AMPLIFIER

TYPICAL CHARACTERISTICS
CLOSED-LOOP GAIN AND PHASE vs FREQUENCY
40 30 20 Closed-Loop Gain dB 10 0 Gain 10 20 30 40 50 60 10 100 1k 10 k 100 k 1M 10 M VDD = 1.6 V RL = 32 TA = 25C Phase 180 150 120 90 60 30 0 30 60 90 120 150 180 100 M Phase Phase

f Frequency Hz

Figure 24
CLOSED-LOOP GAIN AND PHASE vs FREQUENCY
40 30 20 Closed-Loop Gain dB 10 0 Gain 10 20 30 40 50 60 10 100 1k 10 k 100 k 1M 10 M VDD = 3.3 V RL = 16 TA = 25C Phase 180 150 120 90 60 30 0 30 60 90 120 150 180 100 M

f Frequency Hz

Figure 25

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TPA6101A2 50mW ULTRALOWVOLTAGE, FIXEDGAIN STEREO HEADPHONE AUDIO POWER AMPLIFIER

TYPICAL CHARACTERISTICS
CLOSED-LOOP GAIN AND PHASE vs FREQUENCY
40 30 20 Closed-Loop Gain dB 10 0 Gain 10 20 30 40 50 60 10 100 1k 10 k 100 k 1M 10 M VDD = 3.3 V RL = 32 TA = 25C Phase 180 150 120 90 60 30 0 30 60 90 120 150 180 100 M Phase

f Frequency Hz

Figure 26
SUPPLY CURRENT vs SUPPLY VOLTAGE
1 0.9 0.8 I DD Supply Current mA 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 TA = 40C VDD Low-to-High TA = 25C TA = 125C TA = 25C PD Power Dissipation mW 40 35 30 25 20 15 10 5 0 0 10 20 30 40 50 60 70 PO Output Power mW 32 VDD = 3.3 V

POWER DISSIPATION vs OUTPUT POWER

16

50

VDD Supply Voltage V

Figure 27

Figure 28

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APPLICATION INFORMATION
input capacitor, CI In the typical application, an input capacitor (CI) is required to allow the amplifier to bias the input signal to the proper dc level for optimum operation. In this case, CI and RI form a high-pass filter with the corner frequency determined in equation 1. RI is set internally and is fixed at 80 k. fc + 1 2 p RI CI (1)

The value of CI is important to consider, as it directly affects the bass (low-frequency) performance of the circuit. Consider the example where the specification calls for a flat bass response down to 20 Hz. Equation 1 is reconfigured as equation 2. CI + 1 2 p RI fc (2)

In this example, CI is approximately 0.1 F. A further consideration for this capacitor is the leakage path from the input source through the input network (RI, CI) and the feedback resistor (RF) to the load. This leakage current creates a dc-offset voltage at the input to the amplifier that reduces useful headroom. For this reason, a low-leakage tantalum or ceramic capacitor is the best choice. When polarized capacitors are used, the positive side of the capacitor should face the amplifier input in most applications, as the dc level there is held at VDD/4, which is likely higher than the source dc level. It is important to confirm the capacitor polarity in the application. power supply decoupling, CS The TPA6101A2 is a high-performance CMOS audio amplifier that requires adequate power supply decoupling to ensure that the output total harmonic distortion (THD) is as low as possible. Power supply decoupling also prevents oscillations for long lead lengths between the amplifier and the speaker. The optimum decoupling is achieved by using two capacitors of different types that target different types of noise on the power supply leads. For higher frequency transients, spikes, or digital hash on the line, a good low equivalent-series-resistance (ESR) ceramic capacitor, typically 0.1 F, placed as close as possible to the device VDD lead, works best. For filtering lower-frequency noise signals, a larger, aluminum electrolytic capacitor of 10 F or greater placed near the power amplifier is recommended. midrail bypass capacitor, CB The midrail bypass capacitor (CB) serves several important functions. During start-up, CB determines the rate at which the amplifier starts up. This helps to push the start-up pop noise into the subaudible range (so low it can not be heard). The second function is to reduce noise produced by the power supply caused by coupling into the output drive signal. This noise is from the midrail generation circuit internal to the amplifier. The capacitor is fed from a 55-k source inside the amplifier. To keep the start-up pop as low as possible, the relationship shown in Euation 3 should be maintained.

C B

1 v 1 CI RI 55 k

(3)

As an example, consider a circuit where CB is 1 F, CI is 0.1 F, and RI is 80 k. Inserting these values into Euation 3 results in: 18.18 125 which satisfies the rule. Bypass capacitor (CB) values of 0.47 F to 1 F and ceramic or tantalum low-ESR capacitors are recommended for the best THD and noise performance.

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APPLICATION INFORMATION output coupling capacitor, CC
In the typical single-supply, single-ended (SE) configuration, an output coupling capacitor (CC) is required to block the dc bias at the output of the amplifier, thus preventing dc currents in the load. As with the input coupling capacitor, the output coupling capacitor and impedance of the load from a high-pass filter is governed by Equation 4. fc + 1 2 p RL CC (4)

The main disadvantage, from a performance standpoint, is that the typically small load impedances drive the low-frequency corner higher. Large values of CC are required to pass low-frequencies into the load. Consider the example where a CC of 68 F is chosen and loads vary from 32 to 47 k. Table 1 summarizes the frequency response characteristics of each configuration. Table 1. Common Load Impedances vs Low-Frequency Output Characteristics in SE Mode
RL 32 10,000 47,000 CC 68 F 68 F 68 F LOWEST FREQUENCY 73 Hz 0.23 Hz 0.05 Hz

As Table 1 indicates, headphone response is adequate and drive into line-level inputs (a home stereo for example) is very good. The output coupling capacitor required in single-supply SE mode also places additional constraints on the selection of other components in the amplifier circuit. With the rules described earlier still valid, add the following relationship:

C B

1 v 1 1 CI RI RLCC 55 k

(5)

using low-ESR capacitors

Low-ESR capacitors are recommended throughout this application. A real capacitor can be modeled simply as a resistor in series with an ideal capacitor. The voltage drop across this resistor minimizes the beneficial effects of the capacitor in the circuit. The lower the equivalent value of this resistance, the more the real capacitor behaves like an ideal capacitor.

3.3-V versus 1.6-V operation

The TPA6101A2 was designed for operation over a supply range of 1.6 V to 3.6 V. There are no special considerations for 1.6-V versus 3.3-V operation as far as supply bypassing, gain setting, or stability. Supply current is slightly reduced from 0.75 mA (typical) to 0.65 mA (typical). The most important consideration is that of output power. Each amplifier can produce a maxium output voltage swing within a few hundred millivolts of the rails with a 10-k load. However, this voltage swing decreases as the load resistance decreases, and the rDS(on) of the output stage transistors becomes more significant. For example, for a 32- load, the maximum peak output voltage with VDD = 1.6 V is approximately 0.7 V with no clipping distortion. This reduced voltage swing effectively reduces the maximum undistorted output power.

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PACKAGING INFORMATION
Orderable Device TPA6101A2D TPA6101A2DG4 TPA6101A2DGKR TPA6101A2DGKRG4 TPA6101A2ZQYR Status
(1)

Package Type Package Drawing SOIC SOIC VSSOP VSSOP BGA MICROSTAR JUNIOR BGA MICROSTAR JUNIOR D D DGK DGK ZQY

Pins 8 8 8 8 15

Package Qty 75 75 2500 2500 2500

Eco Plan

(2)

Lead/ Ball Finish

MSL Peak Temp

(3)

Samples (Requires Login)

ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE

Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM CU NIPDAU Level-1-260C-UNLIM CU NIPDAU Level-1-260C-UNLIM CU NIPDAU Level-1-260C-UNLIM SNAGCU Level-2-260C-1 YEAR

TPA6101A2ZQYRG1

ACTIVE

ZQY

15

2500

SNAGCU

Level-2-260C-1 YEAR

(1)

The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device.
(2)

Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)

MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

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16-Aug-2012

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 2

PACKAGE MATERIALS INFORMATION

www.ti.com 16-Aug-2012

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device

Package Package Pins Type Drawing VSSOP BGA MI CROSTA R JUNI OR DGK ZQY 8 15

SPQ

Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 330.0 330.0 12.4 8.4 5.3 2.8

B0 (mm) 3.4 2.8

K0 (mm) 1.4 1.25

P1 (mm) 8.0 4.0

W Pin1 (mm) Quadrant 12.0 8.0 Q1 Q1

TPA6101A2DGKR TPA6101A2ZQYR

2500 2500

Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com 16-Aug-2012

*All dimensions are nominal

Device TPA6101A2DGKR TPA6101A2ZQYR

Package Type VSSOP BGA MICROSTAR JUNIOR

Package Drawing DGK ZQY

Pins 8 15

SPQ 2500 2500

Length (mm) 358.0 338.1

Width (mm) 335.0 338.1

Height (mm) 35.0 20.6

Pack Materials-Page 2

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