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    N-Channel JFET General Purpose Amplifier

    Uploaded by

    Daniela Cardenas Lubo
    This document provides specifications for N-Channel JFET general purpose amplifiers from Corporation, including the 2N4117-4119 models. Key details include: - The devices have low leakage and capacitance, and are available in TO-92, TO-72, and SOT-23 packages. - Absolute maximum ratings include gate-source voltage of -40V, gate current of 50mA, and power dissipation of 300mW. - Electrical characteristics include gate-source breakdown voltage, drain current, transconductance, input/output capacitance, and more, varying by specific model number.

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    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    N-Channel JFET General Purpose Amplifier

    Uploaded by

    Daniela Cardenas Lubo
    19 views1 page
    This document provides specifications for N-Channel JFET general purpose amplifiers from Corporation, including the 2N4117-4119 models. Key details include: - The devices have low leakage and capacitance, and are available in TO-92, TO-72, and SOT-23 packages. - Absolute maximum ratings include gate-source voltage of -40V, gate current of 50mA, and power dissipation of 300mW. - Electrical characteristics include gate-source breakdown voltage, drain current, transconductance, input/output capacitance, and more, varying by specific model number.

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    2n4117

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    This document provides specifications for N-Channel JFET general purpose amplifiers from Corporation, including the 2N4117-4119 models. Key details include: - The devices have low leakage and capacitance, and are available in TO-92, TO-72, and SOT-23 packages. - Absolute maximum ratings include gate-source voltage of -40V, gate current of 50mA, and power dissipation of 300mW. - Electrical characteristics include gate-source breakdown voltage, drain current, transconductance, input/output capacitance, and more, varying by specific model number.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    19 views1 page

    N-Channel JFET General Purpose Amplifier

    Uploaded by

    Daniela Cardenas Lubo
    This document provides specifications for N-Channel JFET general purpose amplifiers from Corporation, including the 2N4117-4119 models. Key details include: - The devices have low leakage and capacitance, and are available in TO-92, TO-72, and SOT-23 packages. - Absolute maximum ratings include gate-source voltage of -40V, gate current of 50mA, and power dissipation of 300mW. - Electrical characteristics include gate-source breakdown voltage, drain current, transconductance, input/output capacitance, and more, varying by specific model number.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
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    of 1

    N-Channel JFET General Purpose Amplifier

    CORPORATION

    2N4117 2N4119 / 2N4117A 2N4119A PN4117 PN4119 / PN4117A PN4119A / SST4117 SST4119
    PIN CONFIGURATION FEATURES Leakage Low Low Capacitance

    TO - 92
    TO-72

    ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC Operating Temperature Range . . . . . . . . . . . -55oC to +175oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/ oC
    NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

    G D

    C S

    G D S

    SOT-23 G

    5007

    D S

    PRODUCT MARKING (SOT-23) SST4117 SST4118 SST4119 T17 T18 T19

    ORDERING INFORMATION Part Package Temperature Range -55oC to +175oC -55oC to +135oC -55oC to +135oC -55oC to +175oC 2N4117-19/A Hermetic TO-72 PN4117-19/A Plastic TO-92 SST4117-19 Plastic SOT-23 X2N4117-19/A Sorted Chips in Carriers

    ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)


    SYMBOL BVGSS PARAMETER Gate-Source Breakdown Voltage Gate Reverse Current IGSS A devices A devices VGS(off) IDSS gfs gfs gos Ciss Crss Gate-Source Pinch-Off Voltage Drain Current at Zero Gate Voltage (Note 1) Common-Source Forward Transconductance (Note 1) Common-Source Forward Transconductance (Note 2) Common-Source Output Conductance Common-Source Input Capacitance (Note 2) Common-Source Reverse Transfer Capacitance (Note 2) -0.6 70 60 3 3 1.5 4117/A -40 -10 -1 -25 -2.5 -1.8 210 -1 80 70 5 3 1.5 4118/A -40 -10 -1 -25 -2.5 -3 250 -2 100 90 10 3 pF 1.5 4119/A -40 -10 -1 -25 -2.5 -6 330 S MIN MAX MIN MAX MIN MAX UNITS V pA nA V mA TEST CONDITIONS IG = -1A, VDS = 0 VGS = -20V, VDS = 0 TA = +150oC VDS = 10V, ID = 1nA VDS = 10V, VGS = 0 VDS = 10V, f = 1kHz VGS = 0, f = 30MHz VDS = 10V, VGS = 0, f = 1kHz VDS = 10V, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, f = 1MHz

    0.02 0.09 0.08 0.24 0.20 0.60

    NOTES: 1. Pulse test: Pulse duration of 2ms used during test. 2. For design reference only, not 100% tested.

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