DISCRETE SEMICONDUCTORS

DATA SHEET

2N3866; 2N4427 Silicon planar epitaxial overlay transistors

Product specication Supersedes data of August 1986 File under Discrete Semiconductors, SC08a 1995 Oct 27

Philips Semiconductors

Product specication

Silicon planar epitaxial overlay transistors

DESCRIPTION NPN overlay transistors in TO-39 metal packages with the collector connected to the case. The devices are primarily intended for class-A, B or C amplifiers, frequency multiplier and oscillator circuits. PINNING - TO-39/1 PIN 1 2 3 emitter base collector
handbook, halfpage

2N3866; 2N4427
APPLICATIONS The transistors are intended for use in output, driver or pre-driver stages in VHF and UHF equipment.

DESCRIPTION
1 2

MBB199

Fig.1 Simplified outline.

QUICK REFERENCE DATA SYMBOL VCER 2N3866 2N4427 VCEO collector-emitter voltage 2N3866 2N4427 VEBO emitter-base voltage 2N3866 2N4427 IC IC(AV) Ptot fT Tj RF performance TYPE NUMBER 2N3866 2N4427 f (MHz) 400 175 VCE (V) 28 12 Po (W) 1 1 Gp (dB) >10 >10 (%) >45 >50 collector current (DC) average collector current total power dissipation transition frequency junction temperature measured over any 20 ms period up to Tmb = 25 C IC = 50 mA; VCE = 15 V; f = 200 MHz open collector 500 3.5 2.0 0.4 0.4 3.5 200 V V A A W MHz C open base 30 20 V V PARAMETER collector-emitter voltage CONDITIONS RBE = 10 55 40 V V MIN. MAX. UNIT

1995 Oct 27

Philips Semiconductors

Product specication

Silicon planar epitaxial overlay transistors

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage 2N3866 2N4427 VCER collector-emitter voltage 2N3866 2N4427 VCEO collector-emitter voltage 2N3866 2N4427 VEBO emitter-base voltage 2N3866 2N4427 IC IC(AV) ICM Ptot Tstg Tj collector current (DC) average collector current collector current peak value total power dissipation storage temperature junction temperature up to Tmb = 25 C measured over any 20 ms period open collector 65 open base RBE = 10 CONDITIONS open emitter

2N3866; 2N4427

MIN.

MAX. 55 40 55 40 30 20 3.5 2.0 0.4 0.4 0.4 3.5 +200 200 V V V V V V V V A A A W

UNIT

C C

THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to ambient in free air thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink note 1 note 2 CONDITIONS 200 50 1.0 2.5 VALUE K/W K/W K/W K/W UNIT

Notes 1. Mounted with top clamping washer 56218. 2. Mounted with top clamping washer 56218 and a boron nitride washer for electrical insulation.

1995 Oct 27

Philips Semiconductors

Product specication

Silicon planar epitaxial overlay transistors

2N3866; 2N4427

MGC589

handbook, halfpage

handbook, halfpage

MGC590

Ptot

IC (A)

(W) 3

10 1

(1) (2)

10 2 1 10 VCE (V)

10 2

50

100

150

200 Tmb (oC)

Tmb = 25 C. (1) 2N4427. (2) 2N3866.

Fig.2 DC SOAR.

Fig.3 Power derating curve.

1995 Oct 27

Philips Semiconductors

Product specication

Silicon planar epitaxial overlay transistors

CHARACTERISTICS Tj = 25 C unless otherwise specied. SYMBOL V(BR)CBO 2N3866 2N4427 V(BR)CEO collector-emitter breakdown voltage 2N3866 2N4427 V(BR)CER collector-emitter breakdown voltage 2N3866 2N4427 V(BR)EBO emitter-base breakdown voltage 2N3866 2N4427 VCEsat collector-emitter saturation voltage 2N3866 2N4427 ICEO collector leakage current 2N3866 2N4427 hFE DC current gain 2N3866 2N3866 2N4427 2N4427 fT Cc transition frequency collector capacitance 2N3866 2N4427 APPLICATION INFORMATION Table 1 RF performance at Tmb = 25 C. f (MHz) 100 250 400 2N4427 175 470 VCE (V) 28 28 28 12 12 Po (W) 1.8 1.5 1.0 1.0 0.4 Gp (dB) >10 >10 >10 >10 >10 VCB = 28 V; IE = Ie = 0; f = 1 MHz VCB = 12 V; IE = Ie = 0; f = 1 MHz IC = 50 mA; VCE = 5 V IC = 360 mA; VCE = 5 V IC = 100 mA; VCE = 5 V IC = 360 mA; VCE = 5 V IC = 50 mA; VCE = 15 V; f = 200 MHz open base; VCE = 28 V open base; VCE = 12 V IC = 100 mA; IB = 20 mA open collector; IE = 100 A RBE = 10 ; IC = 5 mA open base; IC = 5 mA PARAMETER collector-base breakdown voltage CONDITIONS open emitter; IC = 100 A

2N3866; 2N4427

MIN. 55 40 30 20 55 40 3.5 2 10 5 10 5 500

MAX. 1 0.5 20 20 200 200 3 4

UNIT V V V V V V V V V V A A

MHz pF pF

TYPE NUMBER 2N3866

IC (mA) <107 <107 <79 <167 67

(%) >60 >50 >45 >50 50

1995 Oct 27

Philips Semiconductors

Product specication

Silicon planar epitaxial overlay transistors

Ruggedness

2N3866; 2N4427

The transistors are capable of withstanding a load mismatch corresponding to VSWR = 3 : 1 varied through all phases, under the conditions mentioned in Table 1.

C3
handbook, full pagewidth

C2 input 50

DUT

L5 C4

output 50

L4 L1 L2 C6 L3 C1 C7 R2 R1 C5 VEE
MGC941

VEE = 28 V

Fig.4 Test circuit for the 2N3866 at 400 MHz.

List of components (see Fig.4) COMPONENT C1, C2, C3 C4 C5 C6 C7 R1 R2 L1 L2 L3, L4 L5 DESCRIPTION air trimmer capacitor air trimmer capacitor feed-through capacitor capacitor capacitor resistor resistor 2 turns 1.0 mm copper wire VALUE 4 to 29 pF 4 to 14 pF 1 nF 12 pF 12 nF 5.6 10 int. diameter 6 mm; winding pitch 3 mm 4312 020 36690 int. diameter 3.5 mm int. diameter 7 mm; winding pitch 2.5 mm; leads 2 15 mm 6 DIMENSIONS CATALOGUE No.

Ferroxcube choke coil Z = 450 ; f = 250 MHz 6 turns enamelled 0.5 mm copper wire 2 turns 1.0 mm copper wire 100 nH

1995 Oct 27

Philips Semiconductors

Product specication

Silicon planar epitaxial overlay transistors

2N3866; 2N4427

handbook, full pagewidth

VCC

C6 C5 R L3 C1 input 50 C2 L1 DUT
(1)

C3

L4 C4

output 50

L2
MGC940

VCC = +12 V. (1) The length of the external emitter wire is 1.6 mm.

Fig.5 Test circuit for the 2N4427 at 175 MHz.

List of components (see Fig.5) COMPONENT C1, C2, C3, C4 C5 C6 R L1 DESCRIPTION air trimmer capacitor feed-through capacitor capacitor resistor 2 turns 1.0 mm copper wire 1 nF 12 nF 10 int. diameter 6 mm; winding pitch 2 mm; leads 2 10 mm 4312 020 36640 int. diameter 5 mm; winding pitch 2 mm; leads 2 10 mm int. diameter 10 mm; winding pitch 2 mm; leads 2 15 mm VALUE 4 to 29 pF DIMENSIONS CATALOGUE No.

L2 L3

Ferroxcube choke coil Z = 550 ; f = 175 MHz 2 turns 1.0 mm copper wire 3 turns 1.5 mm copper wire

L4

1995 Oct 27

Philips Semiconductors

Product specication

Silicon planar epitaxial overlay transistors

PACKAGE OUTLINE

2N3866; 2N4427

handbook, full pagewidth

0.86 max

45 o 1 2 8.5 max 3 5.08 9.4 max 6.6 max 12.7 min

MSA241

0.51 max

1.0 max

Dimensions in mm.

Fig.6 TO-39.

1995 Oct 27

Philips Semiconductors

Product specication

Silicon planar epitaxial overlay transistors

DEFINITIONS Data Sheet Status Objective specication Preliminary specication Product specication Limiting values

2N3866; 2N4427

This data sheet contains target or goal specications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains nal product specications.

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specication is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specication. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

1995 Oct 27

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