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The heteroepitaxial growth of the new ternary, group-IV, semiconductor material, Si1-x-yGexCy on Si(100), has been investigated. The epitaxial quality of Si1-x-yGexCy is found to be inferior to that of Si1-xGex with similar Si/Ge... more
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      Electronic EngineeringMicroelectronics And Semiconductor EngineeringMaterials EngineeringMaterials Science
An upper temperature limit of 450 degrees C has been established for growth of heteroepitaxial Si1-x-yGexCy solid solutions with substitutional C on Si(100) by combined ion and molecular beam deposition (CIMD). At 450 degrees C infrared... more
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      Electrical EngineeringElectronic EngineeringMicroelectronics And Semiconductor EngineeringEngineering Physics
Si1-x-y ,GexCy is a novel group IV semiconductor alloy with interesting possibilities for strain modification and bandgap engineering. To investigate the growth kinetics of this new semiconductor, heteroepitaxial Si1-x-y ,GexCy films... more
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    •   69  
      Electrical EngineeringElectronic EngineeringMicroelectronics And Semiconductor EngineeringEngineering Physics
Polycrystalline Si 0.9 Ge 0.1 alloy has been synthesized by microwave processing in a H 011 single mode cylindrical resonant cavity (2.45 GHz, 450 W) at 9508 8 8 8 8C in about 4 minutes. The X-ray diffractograms of mixture recorded before... more
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      Microwave Processing of MaterialsSiGe alloy
New dielectric materials based on SiGe have been formed at room temperature by direct ion beam oxidation and nitridation. Si0.8Ge0.2 layers were deposited by molecular beam epitaxy on Si(100) and then exposed to a low-energy ion beam of... more
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      Microelectronics And Semiconductor EngineeringMaterials EngineeringMaterials ScienceMicroelectronics
In our previous work, we investigated the use of ion beam deposition (IBD) to grow epitaxial films at temperatures lower than those used in thermal processing (less than 500°C). Presently, we have applied IBD to the growth of dense... more
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      EngineeringMicroelectronics And Semiconductor EngineeringMaterials EngineeringPhysics
Amorphous silicon-germanium (a-Si 1 À x Ge x :H) alloy thin films were studied over a wide range of Ge content (x ¼0-1.00) grown by radio frequency plasma CVD (rf PECVD) technique with variation of different deposition parameters such as... more
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    • SiGe alloy