SiGe alloy
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Recent papers in SiGe alloy
The heteroepitaxial growth of the new ternary, group-IV, semiconductor material, Si1-x-yGexCy on Si(100), has been investigated. The epitaxial quality of Si1-x-yGexCy is found to be inferior to that of Si1-xGex with similar Si/Ge... more
Si1-x-y ,GexCy is a novel group IV semiconductor alloy with interesting possibilities for strain modification and bandgap engineering. To investigate the growth kinetics of this new semiconductor, heteroepitaxial Si1-x-y ,GexCy films... more
Polycrystalline Si 0.9 Ge 0.1 alloy has been synthesized by microwave processing in a H 011 single mode cylindrical resonant cavity (2.45 GHz, 450 W) at 9508 8 8 8 8C in about 4 minutes. The X-ray diffractograms of mixture recorded before... more
New dielectric materials based on SiGe have been formed at room temperature by direct ion beam oxidation and nitridation. Si0.8Ge0.2 layers were deposited by molecular beam epitaxy on Si(100) and then exposed to a low-energy ion beam of... more
Amorphous silicon-germanium (a-Si 1 À x Ge x :H) alloy thin films were studied over a wide range of Ge content (x ¼0-1.00) grown by radio frequency plasma CVD (rf PECVD) technique with variation of different deposition parameters such as... more