Comparison of the Characteristics of Thin-Film Transistors (TFTs)

International Journal of Computer Applications, 2014

In the past several years, the thin film transistor technology has progressed intensely, especially in the low temperature, large-area, high throughput fabrication process. Recently, various thin film transistors (TFT) technological sources have been realized, indicating that new information appliances that match new information infrastructures and lifestyles will be available in the future. In this paper, we review different types of TFTs, including amorphous silicon, polysilicon, organic and oxide TFTs. We report here on different techniques e.g. fabrication and simulation based which has been developed to accurately simulate TFT characteristics and to improve the understanding of the device operation. Here, we highlight the problem gap in the TFT technology that includes downscaling of TFTs and stability of p-type zinc oxide (ZnO) TFTs and ways to improve it.

Journal of Non-Crystalline Solids, 2002

This paper addresses the current trends in research and development for: (1) Thin film transistors (TFTs) on plastic substrates, (2) low-temperature poly-silicon (LTPS) for the pixel TFTs and for row and column drivers on glass, (3) addressing of organic light emitting diodes by silicon TFTs. For these advanced applications of TFTs the relevant issues are: (i) higher electron mobility, (ii) stability, and (iii) defect free, uniform deposition of thin silicon films and gate dielectrics at a high deposition rate (reduced cost). At Utrecht University, we are investigating hot wire (catalytic) chemical vapor deposition (CVD) as a deposition technique for novel TFTs that have a high potential to meet the above mentioned requirements. Bottom gate, inverted staggered TFTs with hot wire CVD (HWCVD) silicon films have been made with an electron mobility of 1:5 cm 2 =V s, and with field effect characteristics that are completely stable under operating conditions. Top gate, coplanar TFTs with polycrystalline silicon (poly-Si) films have been made, which showed a mobility of 4:7 cm 2 =V s. This has been obtained without any post treatment, and the hot wire technology can thus avoid expensive, time-consuming steps such as laser recrystallization as currently used in the production of the latest poly-Si lap top displays. HWCVD is also suitable for the deposition of SiN x :H gate dielectrics. TFTs with a hot wire silicon nitride gate dielectric have been deposited. Ó

2014

Thin-film transistors (TFTs) are a key element of flexible electronics implemented on low-cost substrates. Thin film transistors (TFTs) are considered as an ideal candidate to implement flexible electronics, due to its compatibility with low-temperature and low-cost processes on flexible substrates. With a common substrate, consisting of the gate, the insulator and the source and drain electrodes, rapidly many different types of TFTs based on different materials can be made. Such flexibility in production is especially of interest to research. This paper gives a brief review on the operation of TFTs, their important parameters and their area of application. Keywords- Thin film transistors, threshold voltage, mobility, flat panel displays, amorphous, polycrystalline.

Interface magazine, 2013

2016

Transparent electronics becomes one of the most advanced topics for wide range of device applications. The key components are wide band gap semiconductors, where oxides of different origins play an important role as passive component and also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n-type oxide based thin-film transistors (TFT) is reviewed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited. Then, an overview is presented of TCAD simulation tool for TFT.

Synthetic Metals, 2006

A new analytical model is developed for thin-film field-effect transistors (TFTs). The active layer of the devices is considered purely twodimensional. In the first part, the basic model is developed for intrinsic materials. It is demonstrated that it accurately describes the electrical characteristics and elucidates on the physical meaning of the device and material parameters, such as threshold voltage and sub-threshold current. It also clarifies the nature of so-called contact effects, often used in literature to explain non-linear I-V curves. Furthermore, ambipolar devices are treated.

MRS Proceedings, 1984

ABSTRACTWe have developed a procedure to optimize electron mobility and leakage currents in MOSFETs fabricated in laser recrystallized polysilicon films on SiO2. A shaped laser beam was used to obtain grain boundaries aligned with the current flow in MOS transistors. To suppress grain boundary diffusion, rapid thermal annealing replaced all high temperature processing steps subsequent to source and drain implantation. By combining these two approaches, functional transistors as short as 1.5 μm were obtained, and also 2 μm-channel 19-stage ring oscillators with 115 psec/stage propagation delay.

Pakistaniaat, 2013