Leipzig University (Universität Leipzig)
Sektion Physik
The electronic structure of K-doped C60 was investigated by photoemission (PE) and X-ray absorption near-edge structure (XANES) studies at the C-ls and K-2p thresholds. In addition, information on the local K-derived partial density of... more
Extreme ultraviolet lithography (EUVL) at 13.5 nm is the next generation lithography technique capable of printing sub-50 nm structures. With decreasing feature sizes to be printed, the requirements for the lithography mask also become... more
The electronic structure of C60 has been studied by electron energyloss spectroscopy (EELS) in transmission, and by high resolution photoemission (PES) studies. Information on the occupied and unoccupied lr, ~*, o and o* band structure is... more
We report on recent developments of an ''at-wavelength" full-field imaging technique for inspection of multilayer mask blank defects and patterned mask samples for extreme ultraviolet lithography (EUVL) by EUV photoemission electron... more
Nanoplasmonic excitations as generated by few-cycle laser pulses on metal nanostructures undergo ultrafast dynamics with timescales as short as a few hundred attoseconds (1 as = 10 −18 s). So far, the spatiotemporal dynamics of optical... more
We report on the imaging of plasmonic structures by time-of-flight-photoemission electron microscopy (ToF-PEEM) in combination with extreme ultraviolet (XUV) attosecond pulses from a high harmonic generation source. Characterization of... more