Papers by Mirosław J Kruszewski
Join us in shaping the future of sustainable energy! Our special issue on thermoelectric material... more Join us in shaping the future of sustainable energy! Our special issue on thermoelectric materials and applications invites cutting-edge research that promises to revolutionize energy generation and cooling systems. From rapid synthesis techniques to advanced device development, we're seeking contributions that push the boundaries of thermoelectric technology. Whether you're exploring new materials or modeling their performance, your work can make a significant impact in reducing our dependence on fossil fuels. Don't miss this opportunity to be part of the solution – submit your manuscript today and be a driving force in advancing the field of thermoelectric!
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Materials Today: Proceedings, 2021
Skutterudites are highly promising thermoelectric materials for mid-temperature range (400-850 K)... more Skutterudites are highly promising thermoelectric materials for mid-temperature range (400-850 K) applications because they exhibit one of the highest efficiencies of energy conversion at this temperature. It is well proven that skutterudite-based thermoelectric materials can be successfully synthesized using a combination of processing techniques that generally consist of two stages as follows: a) synthesis of the alloy (e.g., melting-quenching/annealing-grounding, and solid-state reaction) and b) final consolidation via various powder metallurgy techniques (e.g., hot pressing, spark plasma sintering, and pulse plasma sintering). The aforementioned fabrication processes are time-and energy-consuming due to their complex and multi-stage nature. The aim of the present study is to review recent rapid fabrication methods of skutterudite thermoelectric materials. Advantages and disadvantages of selected fabrication routes including gas atomization, selective laser melting, self-propagating high-temperature synthesis, meltspinning, and hydrothermal synthesis were discussed and compared to those of conventional synthesis of skutterudite alloys. All the presented fabrication routes offer significant potential for large-scale scalability owing to their time and energy efficiencies that enable fast, low cost, and mass production of thermoelectric materials.
Journal of Electronic Materials, Jun 23, 2016
The main aim of this work was to construct and test an apparatus for characterization of high tem... more The main aim of this work was to construct and test an apparatus for characterization of high temperature thermoelectric modules to be used in thermoelectric generator (TEGs) applications. The idea of this apparatus is based on very precise measurements of heat fluxes passing through the thermoelectric (TE) module, at both its hot and cold sides. The electrical properties of the module, under different temperature and load conditions, were used to estimate efficiency of energy conversion based on electrical and thermal energy conservation analysis. The temperature of the cold side, T c , was stabilized by a precise circulating thermostat (£0.1°C) in a temperature range from 5°C to 90°C. The amount of heat absorbed by a coolant flowing through the heat sink was measured by the calibrated and certified heat flow meter with an accuracy better than 1%. The temperature of the hot side, T h , was forced to assumed temperature (T max = 450°C) by an electric heater with known power (P h = 0-600 W) with ample thermal insulation. The electrical power was used in calculations. The TE module, heaters and cooling plate were placed in an adiabatic vacuum chamber. The load characteristics of the module were evaluated using an electronically controlled current source as a load. The apparatus may be used to determine the essential parameters of TE modules (open circuit voltage, U oc , short circuit current, I sc , internal electrical resistance, R int , thermal resistance, R th , power density, and efficiency, g, as a function of T c and T h). Several commercially available TE modules based on Bi 2 Te 3 and Sb 2 Te 3 alloys were tested. The measurements confirmed that the constructed apparatus was highly accurate, stable and yielded reproducible results; therefore, it is a reliable tool for the development of thermoelectric generators.
Microelectronics International, Oct 13, 2022
Purpose-The purpose of this paper is to develop and test the thermal interface materials (TIM) fo... more Purpose-The purpose of this paper is to develop and test the thermal interface materials (TIM) for application in assembly of semiconductor chips to package. Good adhesion properties (>5 MPa shear strength) and low thermal interface resistance (better than for SAC solders) are the goal of this research. Design/methodology/approach-Mechanical and thermal properties of TIM joints between gold plated contacts of chip and substrate were investigated. Sintering technique based on Ag pastes was applied for purpose of this study. Performance properties were assessed by shear force tests and thermal measurements. Scanning electron microscopy was used for microstructural observations of cross-section of formed joints. Findings-It was concluded that the best properties are achieved for pastes containing spherical Ag particles of dozens of micrometer size with flake shaped Ag particles of few micrometers size. Sintering temperature at 230°C and application of 1 MPa force on the chip during sintering gave the higher adhesion and the lowest thermal interface resistance. Originality/value-The new material based on Ag paste containing mixtures of Ag particles of different size (form nanometer to dozens of microns) and shape (spherical, flake) suspended in resin was proposed. Joints prepared using sintering technique and Ag pastes at 230°C with applied pressure shows better mechanical and thermal than other TIM materials such as thermal grease, thermal gel or thermally conductive adhesive. Those material could enable electronic device operation at temperatures above 200°C, currently unavailable for Si-based power electronics.
Archives of Metallurgy and Materials, Jul 26, 2023
Microstructure and therMoelectric ProPerties of doPed fesi 2 with addition of B 4 c nanoParticles... more Microstructure and therMoelectric ProPerties of doPed fesi 2 with addition of B 4 c nanoParticles β-Fesi 2 with the addition of b 4 C nanoparticles was manufactured by sintering mechanically alloyed Fe and si powders with mn, Co, al, p as p and n-type dopants. The consolidated samples were subsequently annealed at 1123 k for 36 ks. XrD analysis of sinters after annealing confirmed nearly full transformation from α and ε into thermoelectric β-Fesi 2 phase. sem observations of samples surface were compliant with the diffraction curves. Tem observations allowed to depict evenly distributed b 4 C nanoparticles thorough material, with no visible aggregates and establish grain size parameter d 2 < 500 nm. all dopants contributed to lower thermal conductivity and seebeck coefficient, with Co having strongest influence on increasing electrical conductivity in relation to reference Fesi 2. Combination of the addition of Co as dopant and b 4 C nanoparticles as phonon scatterer resulted in dimensionless figure of merit ZT reaching 7.6 × 10-2 at 773 k for Fe 0.97 Co 0.03 si 2 compound. Comparison of the thermoelectric properties of examined sinters to the previously manufactured of the same stoichiometry but without b 4 C nanoparticles revealed theirs overall negative influence.
The paper aims to develop an assembly technique for the connection of bare Si or TiAu metallized ... more The paper aims to develop an assembly technique for the connection of bare Si or TiAu metallized Si chips to NiAu plated Cu surface. The thermal interface material (TIM) based on Ag paste was used for this purpose. It was found that Ag-based TIM allows creating sound joints between NiAu plated Cu and both types of Si chips. The analysis of the joints showed that the adhesion is in the range of 10 MPa and thermal resistance is less than 0.3 K/W. Therefore, the fabricated joints fulfil the mechanical and thermal requirements for this type of assemblies.
Materiały Ceramiczne /Ceramic Materials, 2012
Journal of Alloys and Compounds, Jul 1, 2022
Ceramics International, Nov 1, 2020
This is a PDF file of an article that has undergone enhancements after acceptance, such as the ad... more This is a PDF file of an article that has undergone enhancements after acceptance, such as the addition of a cover page and metadata, and formatting for readability, but it is not yet the definitive version of record. This version will undergo additional copyediting, typesetting and review before it is published in its final form, but we are providing this version to give early visibility of the article. Please note that, during the production process, errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain.
Materials Characterization, 2015
The interfaces in Pulse Plasma Sintered composites of Cu0.8Cr and diamond have been characterised... more The interfaces in Pulse Plasma Sintered composites of Cu0.8Cr and diamond have been characterised. The interfaces between the diamond and the Cu0.8Cr matrix generally exhibited a strong degree of bonding, but variations related to the orientation of the diamond facets were revealed. Image analysis established that the surfaces of the diamond particles were partially coated with chromium carbide, which averaged 43% for the {111} facets and 31% for the {100} facets. In addition thin and irregular layers of graphite were also observed. The composite with a 50% volume fraction of diamond possessed a thermal diffusivity of 218 mm 2 /s which infers a thermal conductivity of 589 W/(m•K), which is 76% of the maximum theoretical conductivity predicted by the Maxwell model.
Materials in engineering, Jul 1, 2015
Diamond powder with an average particle size of 200 lm was coated with tungsten and tungsten carb... more Diamond powder with an average particle size of 200 lm was coated with tungsten and tungsten carbide coatings of thickness 260 nm. Pulse Plasma Sintering (PPS) was then used to fabricate copper/diamond composites with a 1:1 volume ratio. The composition and structure of the composites, their components and interfacial phases were studied by XRD, SEM, X-ray, FTIR and Raman spectroscopy. The methods to assess the thermal conductivity of diamond based on nitrogen impurity content determined from FTIR spectrum were examined. The ITC was calculated from the measured composite conductivity using comparatively the Differential Effective Medium (DEM) model and the Hasselman-Johnson (H-J) equation. The composite with W coated diamond particles had the thermal conductivity of 690 W/(m K) and the ITC of 45 MW/(m 2 K). The PPS process induced chemical reactions-carbidization of the coatings on diamond W ? W 2 C ? WC-when forming the filler/matrix interface within the composite. Raman spectroscopy was able to detect the formation of a thin ($10-100 nm) restructured sublayer of carbon which is transitional from diamond to graphite in result of the deposition of the tungsten coating on the facets of the diamond particles, a sublayer of turbostratic carbon being formed in result of subsequent sintering.
Ceramics International, Mar 1, 2023
Ceramics International, Mar 1, 2023
Applied Surface Science, 2023
International Conference on Experience of Designing and Applications of CAD Systems in Microelectronics, Apr 7, 2011
This paper is devoted to the determination of temperature field distribution in heterogeneous mat... more This paper is devoted to the determination of temperature field distribution in heterogeneous materials, taking into account their thermophysical properties, including thermal conductivity, heat capacity and density.
Materiały Ceramiczne /Ceramic Materials, 2012
ABSTRACT One of the main challenges in fabrication of copper/diamond composites, apart from graph... more ABSTRACT One of the main challenges in fabrication of copper/diamond composites, apart from graphitization at high temperatures, is a lack of wettability of diamond by copper and the absence of chemical reactions, providing the formation of Cu-carbon compounds needed for a good joint between the diamond and the copper. Moreover, the large mismatch in the values of thermal expansion coef cients of these antageous to the cohesion of the diamond/copper interface. The thermal stresses promote voids formation, which reduces the thermal conductivity of the composite. In metal-diamond composites, the quality of the interface has a crucial effect on their thermal conductivity and mechanical properties. Strong and “clean” bond of the diamond to the matrix should assure high strength and minimum thermal resistance of the interface. In the present work, an attempt has been made to fabricate the copper matrix composite with 50 vol.% of diamond by using the Pulse Plasma Sintering (PPS) technique in the conditions of thermodynamical instability of diamond. The composites have been fabricated at 900 °C under 60 MPa. The phase composition, density and microstructure studies showed a relative density of 99,8% and the absence of graphite. The microstructure examinations revealed uniform distribution of diamond particles in the copper matrix. Good bonding of the diamond to the matrix have been assured by a layer of chromium carbide at the interface.
Fusion Engineering and Design, Oct 1, 2013
ABSTRACT The paper presents the preliminary evaluation of the potential of a pulse plasma sinteri... more ABSTRACT The paper presents the preliminary evaluation of the potential of a pulse plasma sintering (PPS) technique for the fabrication of a He-cooled modular divertor with a multiple-jet cooling module. In this work the W and WL10 elements were directly bonded by PPS. Examination of the microstructure revealed some minor defects at the interface, but the overall quality of the joint was good with no cracks or delamination being detected. To reduce the thermal stress gradient a thin transition layer of iron was used at the WL10/steel interface. In addition an attempt was made to fabricate the complete module by a single sintering process. The microstructures of the fabricated modules were examined and the findings were reported.
Journal of Magnesium and Alloys
Bulletin of the Polish Academy of Sciences Technical Sciences
Doping is one of the possible ways to significantly increase the thermoelectric properties of man... more Doping is one of the possible ways to significantly increase the thermoelectric properties of many different materials. It has been confirmed that by introducing bismuth atoms into Mg sites in the Mg 2 Si compound, it is possible to increase career concentration and intensify the effect of phonon scattering, which results in remarkable enhancement in the figure of merit (ZT) value. Magnesium silicide has gained scientists' attention due to its nontoxicity, low density, and inexpensiveness. This paper reports on our latest attempt to employ ultrafast selfpropagating high-temperature synthesis (SHS) followed by the spark plasma sintering (SPS) as a synthesis process of doped Mg 2 Si. Materials with varied bismuth doping were fabricated and then thoroughly analyzed with the laser flash method (LFA), X-ray diffraction (XRD), scanning electron microscopy (SEM) with an integrated energy-dispersive spectrometer (EDS). For density measurement, the Archimedes method was used. The electrical conductivity was measured using a standard four-probe method. The Seebeck coefficient was calculated from measured Seebeck voltage in the sample subjected to a temperature gradient. The structural analyses showed the Mg 2 Si phase as dominant and Bi 2 Mg 3 located at grain boundaries. Bismuth doping enhanced ZT for every dopant concentration. ZT = 0.44 and ZT=0.38 were obtained for 3wt% and 2wt% at 770 K, respectively.
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Papers by Mirosław J Kruszewski
https://bit.ly/49OKezn
https://bit.ly/49OKezn