This article is an open access article distributed under the terms and conditions of the Creative... more This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY
Reliability of metal interconnects and the integration of inspection and metrology with process t... more Reliability of metal interconnects and the integration of inspection and metrology with process tools are advancing rapidly to overcome obstacles in down stream production. A significant drawback associated with metal interconnects which has resulted from the recent trend is the difficulty in obtaining uniform electroplated layer thicknesses across the maximum lateral dimension of the CMOS logic wafer. The prime objective of this paper is, to-root-cause uniformity troubleshooting by the adoption of integrated diffuser in electrochemical-plating (ECP) system optimizations. These are to quantify the best degree of uniformity and high resistivity to enhance an even current distribution on the wafer. The results show that uniformity of the deposited film has been improved significantly with 1.9%. i.e., maximum deviation of the deposited film thickness is at about 1.9% of the average film thickness, while standard electroplating processes typically achieves uniformity at best within 5.5%. Furthermore, the origin of “hot spots’’ that caused poor uniformity was identified and greatly overcome with the improved ECP system comprising an integrated diffuser design and process modifications in real troubleshooting of back –end operation line (BEOL) of semiconductor foundry.
Multidisciplinary Digital Publishing Institute, Dec 22, 2018
The strong electrostatic adsorption (SEA) method was applied to the synthesis of a cobalt (Co) ca... more The strong electrostatic adsorption (SEA) method was applied to the synthesis of a cobalt (Co) catalyst on a multi-walled carbon nanotube (CNT) support. In order to uptake more of the cobalt cluster with higher dispersion, the CNT was functionalized via acid and thermal treatment. The Co/CNT catalyst samples were characterized by a range of methods including the Brunauer-Emmet-Teller (BET) surface area analyzer, transmission electron microscopy (TEM), X-ray powder diffraction (XRD) analysis, atomic absorption spectroscopy (AAS), and H 2-temperature programmed reduction (H 2-TPR) analysis. The data from the TEM images revealed that the catalyst was highly dispersed over the external and internal walls of the CNT and that it demonstrated a narrow particle size of 6-8 nm. In addition, the data from the H 2-TPR studies showed a lower reduction temperature (420 • C) for the pre-treated catalyst samples. Furthermore, a Fischer-Tropsch synthesis (FTS) reaction was chosen to evaluate the Co/CNT catalyst performance by using a fixed-bed microreactor at different parameters. Finally finding the optimum value of the cobalt loading percentage, particle size, and calcination conditions of Co/CNT catalyst resulted in a CO conversion and C 5+ selectivity of 58.7% and 83.2%, respectively.
This article is an open access article distributed under the terms and conditions of the Creative... more This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY
Reliability of metal interconnects and the integration of inspection and metrology with process t... more Reliability of metal interconnects and the integration of inspection and metrology with process tools are advancing rapidly to overcome obstacles in down stream production. A significant drawback associated with metal interconnects which has resulted from the recent trend is the difficulty in obtaining uniform electroplated layer thicknesses across the maximum lateral dimension of the CMOS logic wafer. The prime objective of this paper is, to-root-cause uniformity troubleshooting by the adoption of integrated diffuser in electrochemical-plating (ECP) system optimizations. These are to quantify the best degree of uniformity and high resistivity to enhance an even current distribution on the wafer. The results show that uniformity of the deposited film has been improved significantly with 1.9%. i.e., maximum deviation of the deposited film thickness is at about 1.9% of the average film thickness, while standard electroplating processes typically achieves uniformity at best within 5.5%. Furthermore, the origin of “hot spots’’ that caused poor uniformity was identified and greatly overcome with the improved ECP system comprising an integrated diffuser design and process modifications in real troubleshooting of back –end operation line (BEOL) of semiconductor foundry.
Multidisciplinary Digital Publishing Institute, Dec 22, 2018
The strong electrostatic adsorption (SEA) method was applied to the synthesis of a cobalt (Co) ca... more The strong electrostatic adsorption (SEA) method was applied to the synthesis of a cobalt (Co) catalyst on a multi-walled carbon nanotube (CNT) support. In order to uptake more of the cobalt cluster with higher dispersion, the CNT was functionalized via acid and thermal treatment. The Co/CNT catalyst samples were characterized by a range of methods including the Brunauer-Emmet-Teller (BET) surface area analyzer, transmission electron microscopy (TEM), X-ray powder diffraction (XRD) analysis, atomic absorption spectroscopy (AAS), and H 2-temperature programmed reduction (H 2-TPR) analysis. The data from the TEM images revealed that the catalyst was highly dispersed over the external and internal walls of the CNT and that it demonstrated a narrow particle size of 6-8 nm. In addition, the data from the H 2-TPR studies showed a lower reduction temperature (420 • C) for the pre-treated catalyst samples. Furthermore, a Fischer-Tropsch synthesis (FTS) reaction was chosen to evaluate the Co/CNT catalyst performance by using a fixed-bed microreactor at different parameters. Finally finding the optimum value of the cobalt loading percentage, particle size, and calcination conditions of Co/CNT catalyst resulted in a CO conversion and C 5+ selectivity of 58.7% and 83.2%, respectively.
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