Papers by Giorgio Degiorgis
Proceedings of SPIE, Jun 1, 1990
During past years a lot of efforts were put from several authors in order to approach the problem... more During past years a lot of efforts were put from several authors in order to approach the problems related to reticle defect printability. Several works analized the physical phenomena affecting the mask imperfection reproducibility and recently it was showed that the impact of reticle defects eeems to increase by going from micron to submicron lithography. The goal at the base of the present work has been to verify these hypothesis by starting from the experience collected in the previous works and by designing targeted experiments in order to classify the real critical impact of the possible important factors.
Proceedings of SPIE, 1988
This work evaluates the performance of an Image Reversal (Im.Re.) resist with dye added (0-1% by ... more This work evaluates the performance of an Image Reversal (Im.Re.) resist with dye added (0-1% by weight) in order to minimize reflectivity effects over aluminum topographies. Planarization over 1-1.5 μm. aluminum steps is studied as a function of viscosity using Im.Re. dyed resist. It is shown that Im.Re. process performance is not only influenced by dye concentration and exposure energies, but it is also significantly affected by the resist composition. High plasma selectivity and sidewall profiles of 85 degrees or higher are obtained with 1.2 μm. coating thickness, resolving 1 μm. 1/s geometries and lower, with limiting resolution, over topography, of Im.Re. dyed resist established in the 0.7-0.9 μm. region.
Proceedings of SPIE, Jul 1, 1991
A wide range of partial coherences is explored in order to clarify their real impact on lithograp... more A wide range of partial coherences is explored in order to clarify their real impact on lithographic latitude of different kinds of patterns. The effects of coherence variations on process characteristics are reported in terms of exposure latitude and focus budget. It is shown that the use of a particular coherence, different from the standard one, can practically benefit the latitude of a critical layer such as the contact mask.
Microelectronic Engineering, 1992
During past years a lot of efforts were put from several authors in order to approach the problem... more During past years a lot of efforts were put from several authors in order to approach the problems related to reticle defect printability. Several works analized the physical phenomena affecting the mask imperfection reproducibility and recently it was showed that the impact of reticle defects eeems to increase by going from micron to submicron lithography. The goal at the base of the present work has been to verify these hypothesis by starting from the experience collected in the previous works and by designing targeted experiments in order to classify the real critical impact of the possible important factors.
Advances in Resist Technology and Processing V, 1988
Advances in Resist Technology and Processing VII, 1990
High Energy Density Technologies in Materials Science, 1990
A wide range of partial coherences is explored in order to clarify their real impact on lithograp... more A wide range of partial coherences is explored in order to clarify their real impact on lithographic latitude of different kinds of patterns. The effects of coherence variations on process characteristics are reported in terms of exposure latitude and focus budget. It is shown that the use of a particular coherence, different from the standard one, can practically benefit the
The present work presents an investigation of the characteristics of a broad band capability phot... more The present work presents an investigation of the characteristics of a broad band capability photoresist in terms of photo-active compound (PAC) bleachability and process performances. The difference in performance on exposure to 436 and 365 nm wavelengths of a commercially available photoresist, Olin Hunt H1PR-6512, has been evaluated as a function of some typical lithographic parameters by using FT-IR spectroscopy and actinometry. This analysis contributed to the development of a submicron I-line process, which in conclusion is shown in a production environment application.
Optical/Laser Microlithography IV, 1991
Integrated Circuit Metrology, Inspection, and Process Control IV, 1990
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Papers by Giorgio Degiorgis