Polymeric semiconductors as poly[2-methoxy, 5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PP... more Polymeric semiconductors as poly[2-methoxy, 5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) have been widely studied in the last years thanks to their electronic and optical properties suitable for applications on opto-electronic devices such as Light-Emitting Diodes (LED) . These materials are well-suited for the fabrication of rigid and flexible ultra-thin displays, characterized by low power consumption and high-quality images [1]. π-conjugated polymers have been widely studied [2, 3], but despite their importance and all the acquired knowledge in the last years, the charge transport mechanisms are still not fully understood. A detailed description of the states and charge carrier mobility requires many efforts due to difficulties found in conventional techniques such as Time-of-Flight (ToF) and due to the small thickness of the films . In this context, our objective is to apply a new and powerful technique, Charge Extraction in a Linearly Increasing Voltage (CELIV), to determine charge carrier mobility in sandwiched structures where the active layer thickness is in the order of hundreds of nanometers. The validity of the results will be demonstrated by comparing them to more conventional techniques, such as Time-of-flight (ToF), Dark Injection in Space Charge Limited Current (DI-SCLC) and Current density versus Voltage (J vs. V) measurements, reaching the minimum thickness where other techniques fail to work. Results from CELIV measurements applied to PLEDs degradation studies by observing changes in carrier mobility and charge injection on samples exposed to air and kept in vacuum will be shown.
Polymeric semiconductors as poly[2-methoxy, 5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PP... more Polymeric semiconductors as poly[2-methoxy, 5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) have been widely studied in the last years thanks to their electronic and optical properties suitable for applications on opto-electronic devices such as Light-Emitting Diodes (LED) . These materials are well-suited for the fabrication of rigid and flexible ultra-thin displays, characterized by low power consumption and high-quality images [1]. π-conjugated polymers have been widely studied [2, 3], but despite their importance and all the acquired knowledge in the last years, the charge transport mechanisms are still not fully understood. A detailed description of the states and charge carrier mobility requires many efforts due to difficulties found in conventional techniques such as Time-of-Flight (ToF) and due to the small thickness of the films . In this context, our objective is to apply a new and powerful technique, Charge Extraction in a Linearly Increasing Voltage (CELIV), to determine charge carrier mobility in sandwiched structures where the active layer thickness is in the order of hundreds of nanometers. The validity of the results will be demonstrated by comparing them to more conventional techniques, such as Time-of-flight (ToF), Dark Injection in Space Charge Limited Current (DI-SCLC) and Current density versus Voltage (J vs. V) measurements, reaching the minimum thickness where other techniques fail to work. Results from CELIV measurements applied to PLEDs degradation studies by observing changes in carrier mobility and charge injection on samples exposed to air and kept in vacuum will be shown.
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