CH 3 PPT

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FUNDAMENTALS OF ELECTRICITY AND

ELECTRONICS DEVICES

CHAPTER 3

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3.1. P-N JUNCTION
 A p-n junction is piece of semiconductor material in
which part of the material is p-type and part is n-
type
 When additional mobile electrons are introduced by

doping a semiconductor material with penta-valent


atoms (atoms having five valence electrons), these
mobile electrons are called majority carriers.
 The relatively few holes in the n-type material

produced by intrinsic action are called minority


carriers
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CONT …

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3.2 UNBIASED PN JUNCTION DIODE
 Since the diode is a two-terminal device, the
application of a voltage across its terminals leaves
three possibilities:
 no bias or unbiased (VD=0 V),
 forward bias(VD>0V), and
 reverse bias (VD<0V)
 Under no-bias (no applied voltage) conditions, any
minority carriers (holes) in the n-type material that
find themselves within the depletion region will pass
directly into the p-type material.
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No-bias (No Applied Voltage)

V =0V
D
 Any minority carriers (holes) in the n-type
material that find themselves within the depletion
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region will pass directly into the p-type material.
Cont …
 Any carriers (holes) in the n-type
minority due to their random find
material
themselves within the depletion motion region
that pass directly into the p-type material.
will
 The closer the minority carrier is to the junction,

the greater the attraction for the layer of negative


ions and the less the opposition of the positive
ions in the depletion region of the n-type material.
 The majority carriers (electrons) of the n-type

material must overcome the attractive forces of the


layer of positive ions in the n-type material 6
BIASED PN JUNCTION DIODE

1. Reverse Bias (VD< 0V)


 The polarity of the source is chosen so that the
positive terminal is connected to the n-type side and
the negative terminal is connected to the p-type side.
 The number of uncovered positive ions in the

depletion region of the n-type material will increase


due to the large number of “free electrons” drawn to
the positive potential of the applied voltage.

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Cont …

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2. Forward Bias p-n junction
With the polarity of the dc source chosen so that the
positive terminal is connected to the p-type side and the
negative terminal is connected to the n-type side.

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IDEAL DIODE
 The first electronic device to be introduced is called the diode.
 The ideal diode is a perfect two-state device that exhibits zero

impedance when forward-biased and infinite impedance when


reverse-biased
 Since either current or voltage is zero at any instant, no power is

dissipated by an ideal diode

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IDEAL DIODE ANALYSIS PROCEDURE
Step 1: Assume forward bias, and replace the ideal diode
with a short circuit.
Step 2: Evaluate the diode current iD, using any linear
circuit-analysis technique.
Step 3: If iD > 0, the diode is actually forward- biased,
the analysis is valid, and step 4 is to be omitted.
Step 4: If iD< 0, the analysis so far is invalid.

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Example: Find voltage vL in the circuit below, where D is an ideal
diode.

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Solution
Step 1: After replacing the network to the left of terminals a; b with
the Thevenin equivalent, assume forward bias and replace diode D
with a short circuit

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Step 2: By Ohm’s law

Step 3: If vS ≥ 0, then iD ≥ 0 and

Step 4: If vS < 0, then iD<0 and the result of step 3


is invalid. Diode D must be replaced by an open circuit as
(c)
Since now iD = 0, vL = iDRL= 0. Since vD = vS < 0,
the reverse bias of the diode is verified.
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3.5 ANALYSIS OF DIODE CIRCUITS
1. Graphical Analysis
 A graphical solution necessarily assumes that the diode
is resistive and therefore instantaneously characterized
by its static iD versus vD curve.
 The balance of the network under study must be linear
so that a Thevenin equivalent exists for it.
 The two simultaneous equations to be solved
graphically for iD and vD are the diode characteristic

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CONT …

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CONT …

Example In the circuit of (a), vs=6V and R1=RS=RL= 500 ohm.


Determine iD and vD graphically, using the diode characteristic based
on above last figure

 The desired solution, iD=3mA and vD=0.75 V, is given by the point


of intersection
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2. EQUIVALENT-CIRCUIT ANALYSIS
A. Piecewise-Linear Techniques
 Inpiecewise-linear analysis, the diode
characteristic curve is approximated with straight-line
segments.
 We use combinations of ideal diodes, resistors,
and batteries replace the actual diode.
 Actual diode as an infinite resistance for V <V , and
D F
as an ideal battery if VD tends to be greater than VF.
V is usually selected as 0.6 to 0.7 V for a Si diode and
F
0.2 to 0.3 V for a Ge diode
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B. Small-Signal Techniques
 Small-signal analysis can be applied to the diode circuit

below if the amplitude of the ac signal


 The ratio of the diode ac voltage Vd to the diode
ac current id will be constant and equal to rd

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3.6 DIODE TYPES
1. Zener Diodes
The Zener diode or reference diode, whose finds primary
usage as a voltage regulator or reference.
2. Light-emitting Diodes
The diode use of digital displays in calculators, LCD,
watches, and all forms of instrumentation
3. Silicon controlled rectifiers or thyristors
Silicon controlled rectifiers (or thyristors) are three
terminal devices which can be used for switching and a.c.
power control.
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3.7 APPLICATIONS OF DIODE CIRCUITS,
RECTIFICATION, POWER SUPPLIES & VOLTAGE
REGULATORS, CLIPPERS AND CLAMPERS

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APPLICATIONS OF DIODE CIRCUITS
Load-Line Analysis
The intersection of the load line with the ch/cs will
determine the point of operation of the system. Such an
analysis is, for obvious reasons, called load-line analysis.

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 The“pressure” established by the battery is to establish a
Applying Kirchhoff’s voltage law to the series circuit

 Ifwe set VD = 0 V in Eq. above and solve for ID, we have


the magnitude of ID on the vertical axis.

 The resulting polarity across the diode will be in the first


quadrant (VD and ID positive) of Fig. b will be the region
of interest—the forward-bias region.
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Example: For the series diode configuration of Fig. below
employing the diode characteristics of determine:
(a) VDQ and IDQ
(b) VR.

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Solution
a)

The intersection between the load line and the ch/c curve defines
the Q-point as

b)

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RECTIFIER
 The process of obtaining unidirectional currents
and voltages from alternating currents and
voltages is called rectification.
 Semiconductor diodes are commonly used to

convert alternating current to direct current, in


which case they are referred to as rectifiers.
 If it operates on only either positive or negative

half-cycles of the supply, it is known as a half


wave rectifier.
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CLIPPING AND CLAMPING OPERATIONS

Clipping circuits separate an input signal at a


particular dc level and pass to the output, without
distortion.
 They are used to eliminate amplitude noise or to

fabricate new waveforms from an existing


signal.
Clamping is a process of setting the positive or
negative peaks of an input ac waveform to a
specific dc level, regardless of any variation in
those peaks. 2
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THANK
U!3
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