3U VNB PED-Unit-I

POWER ELECTRONICS
AND DRIVES
5ET2
Prof. V. N. Bhonge
Dept. of Electronics & Telecomm.
Shri Sant Gajanan Maharaj College of Engg.
Shegaon – 444203
[email protected]
PE& D Syllabus
SSGMCEUnit I:
Shegaon
SCR, Triac, Diac-construction, characteristics, two transistor
analogy for turning ON of a SCR, different methods of
turning ON of a SCR, turn OFF mechanism,
Thyristor firing circuit using UJT. Introduction to GTO,
power transistor, power MOSFET, IGBT - their construction
& characteristics
Unit II:
Principle of phase control, half wave controlled rectifier, half
controlled bridge & fully controlled bridge rectifier for
resistive and RL load, derivation for output voltage and
current, effect of freewheeling diode, single phase dual
converters. Three phase half controlled bridge and fully
controlled bridge rectifier.
Prof. V. N. Bhonge Dept. of E & T

Unit III:
SSGMCE
Classification of circuit for forced commutation, series inverter,
Shegaon
improved series inverter, parallel inverter, output voltage and

waveform control, principle of operation for three phase bridge
inverter in 120 deg. and 180 deg. mode, single phase
transistorized bridge inverter, current source inverter, harmonics
reduction techniques.
Unit IV:
Basic principles of chopper, time ratio control and current limit
control techniques, voltage commutated chopper circuit, Jones
chopper, step-up chopper and AC chopper. Basic principle of
cycloconverter, single phase to single phase cycloconverter.

SSGMCE
Unit V:
Shegaon
DC Motor: Principle of Operation, Types of Motor, Speed Control of
Shunt Motor: Flux Control, Armature voltage control, using phase
controlled rectifier, Speed Control of Series Motor: Flux Control,
Rheostatic Control, chopper control.
Stepper Motor: Construction, Working, characteristics and
applications. Application of power electronic circuit in single phase
DC drives.
Unit VI:
Single phase induction motor: Construction, Working, characteristics
and applications. Three phase induction motor: Working,
characteristics, speed control method: Armature voltage, V/F control,
rotor control, slip power recovery
scheme and applications. AC servo motor: Principal of operation and
characteristic.

TEXT BOOKS:
SSGMCE
Shegaon 1. M. Ramamoorthy, Thyristor and their applications.
2. B.L. Theraja: “Electrical Technology”, Volume-2, S. Chand
Publications.
REFERENCE BOOKS :
1. M. H. Rashid, “Power Electronics Circuits, Devices and Application”,
Pearson Edu.
2. Joseph Vithayathil, “Power Electronics: Principles and Applications”,
McGraw-Hill.
3. M.D.Singh, K.B.Khanchandani, “Power Electronics”, Tata McGraw-
Hill.
4. Devdatta Y. Shingare, “A Text book of Industrial & Power Electronics”,
Electrotech Pub.
5. Nagrath Kothari, “Electrical Machines”, TMH Publications.

SSGMCE .
Shegaon

 Power electronics refers to control and conversion of electrical power by
power semiconductor devices wherein these devices operate as switches.
• "Electronic power converter" is the term that is used to refer

to a power electronic circuit that converts voltage and
current from one form to another.
• Rectifier converting an AC voltage to a DC voltage,
• Inverter converting a DC voltage to an AC

voltage,
• Chopper or a switch-mode power supply that converts a DC
voltage to another DC.
• Cycloconverter and cycloinverter converting an AC voltage
to another AC voltage.
INTERDISCIPLINARY NATURE OF POWER
ELECTRONICS
SSGMCE
Shegaon

APPLICATIONS OF POWER
ELECTRONICS
SSGMCE
Shegaon

APPLICATIONS
SSGMCE
Shegaon
 Heating and lighting control
 Induction heating
 Uninterruptible power supplies (UPS)
 Fluorescent lamp ballasts: Passive; Active
 Electric power transmission
 Automotive electronics
 Electronic ignitions
 Motor drives
 Battery chargers
 Alternators
 Energy storage
 Electric vehicles
 Alternative power sources: Solar; Wind; Fuel Cells
 And more!

THYRISTOR
SSGMCE
Shegaon
SCR—silicon controlled rectifier
Thyristor Opened the power electronics era

–1956, invention, Bell Laboratories
–1957, development of the 1st product, GE
–1958, 1st commercialized product, GE
–Thyristor replaced vacuum devices in almost every
power processing area.
Use in high power situation.

Thyristor has the highest power-handling capability.
WHY GERMANIUM IS NOT USED FOR
MANUFACTURING CONTROLLED
SSGMCE
RECTIFIERS
Shegaon
 Resistivity of Silicon is 33x102Ωm

 Resistivity of Germanium is 0.47Ωm
 Ge is having very less ability to withstand reverse
voltage.

Thyrister Family
SSGMCE
Shegaon
 SCR—Silicon Controlled Rectifier
 Diac
 TRIAC = Triode Thyrister
 GTO = Gate Turn Off Thyristor
 IGBT = Insulated Gate Bipolar Junction Transistor
 LASCR = Light Activated SCR
 MOS = Metal Oxide Semiconductor
 MCT = MOS Controlled Thyristor
 MTO = MOS Turn Off Thyristor
 ETO = Emitter Turn Off Thyristor
 IGCT = Insulated Gate Controlled Thyristor
 SITH = Static Induction Thyristor

Thyrister Family
SSGMCE
Shegaon Cont….
 NPN BJT = NPN Bipolar Junction Transistor
 N-Channel MOSFET = N-Channel Metal Oxide Silicon
Field Effect Transistor
 SIT = Static Induction Transistor
 RCT = Reverse Conducting Thyristor
 GATT = Gate Assisted Turn Off Thyristor

Thyrister Family
SSGMCE
Shegaon

SSGMCE
Shegaon

Thy BJT FET GTO IGBT IGCT
SSGMCE Avail- Early Late 70s Early Mid 80s Late 80s Mid 90’s
abilty 60s 80s
Shegaon
State of Mature Mature Mature/ Mature Rapid Rapid
Tech. improve improve improvem
ent
Voltage 5kV 1kV 500V 5kV 3.3kV 6.5kV
ratings
Current 4kA 400A 200A 5kA 1.2kA 4kA

ratings
Switch na 5kHz 1MHz 2kHz 100kHz 1kHz

Freq.
On-state 2V 1-2V I* Rds 2-3V 2-3V 3V

Voltage (on)
Drive Simple Difficult Very Very Very Simple
Circuit simple difficult simple
Comm-ents Cannot Phasing Good King in Best Replacing
turn off out in new performan very high overall GTO
using gate product ce in high power performanc
signals freq. e.

RATINGS OF POWER DEVICES
SSGMCE
Shegaon

CURRENT AND FUTURE POWER
SEMICONDUCTOR DEVICES
DEVELOPMENT DIRECTION.
Power semiconductor device variety
SSGMCE
Shegaon
FRED : Fast Recovery Epitaxial Diodes

MOV:Metal oxide varistor
PIC:Programmable Interface Controllers

SCR / THYRISTOR
SSGMCE
Shegaon

APPEARANCE AND SYMBOL OF
THYRISTOR
SSGMCE
Shegaon
SCR1 TRAIC
MT1
2N3668
2N6346

THYRISTORS
SSGMCE
Shegaon
 Most important type of power semiconductor device.
 Have the highest power handling capability, they have a
rating of 5000V / 6000A with switching frequencies
ranging from 1KHz to 20KHz.
 Is inherently a slow switching device compared to BJT or
MOSFET.
 Used as a latching switch that can be turned on by the
control terminal but cannot be turned off by the gate.

Structure of SCR
SSGMCE
Shegaon
Gate Cathode
n
+ 19
10 cm
-3
n
+ 19
10 cm
-3
 10 m

J3 - 17 -3
p 10 cm 30-100 m

J2
–
n
13
10 -5 x 10 cm
14 -3 50-1000 m
J1
p
+
17
10 cm
-3
 30-50 m
19 -3
p 10 cm
Anode

V-I CHARACTERISTICS OF
SCR
SSGMCE
Shegaon

Thyristor Main Parameters:
There’re several parameters related to static & dynamic performance of the thyristor,
these parameters are as follow :
1-VAK- thyristor voltage at steady state 2 V;
2-VBO- -break over voltage , voltage after which thyristor will turning on at constant
gate current ;
3-VBR- break down voltage in reverse biasing state;
4-IH- thyristor holding current :this a minimized load current keeping the thyristor in
conducting state ( if the current goes down the thyristor will switch-off);
5- IL- thyristor latching current :this a minimized load current keeping the thyristor in
conducting state after removing the gate signal ;
6-VGT- minimum gate voltage required to firing the thyristor at given loadind condition
, VGT  0.8…12V;
7-IGT- minimum gate current., IGmax- maximum gate current ;
8-di/dt- speed of (increasing/decreasing) of thyristor current ;
9-dv/dt - speed of (increasing/decreasing) of thyristor voltage .
V-I CHARACTERISTICS OF
SCR
SSGMCE
Shegaon
Latching current
Minimum anode current that must flow through the SCR
in order for it to stay on initially after gate signal is
removed.
Holding Current
Minimum value of anode current, required to maintain
SCR in conducting state.

Effects of gate current
SSGMCE
Shegaon

STRUCTURE AND EQUIVALENT CIRCUIT
SSGMCE
OF THYRISTOR
Shegaon
Structure Equivalent circuit

A A
Equivalent
IA
PNP
circuit
V
P1 1
Ic2
IG Ic1
N1 N1 G
V2
G P2 P2 NPN
IK
N2
K
K b)
a)

PHYSICS OF THYRISTOR
OPERATION
SSGMCE
Shegaon
Equivalent circuit: A pnp transistor and an npn

A
IA transistor interconnected together
PNP
V1 Positive feedback
Ic2 R
IG Ic1 Trigger
G
V2
NPN Can not be turned off by control
S EA
IK signal
EG
K Half-controllable

TWO TRANSISTOR MODEL OF SCR
SSGMCE
Shegaon
 

SSGMCE
Shegaon
 For 0 < VAK < VBR(F),
 Turn Q2 ON by applying a current

into the Gate
 This causes Q1 to turn ON, and

eventually both transistors
SATURATE
 VAK = VCEsat + VBEsat
 If the Gate pulse is removed, Q1

and Q2 still stay ON!

SSGMCE
Shegaon
The general transistor equations are,

I C   I B  1    I CBO
I C   I E  I CBO
I E  IC  I B
I B  I E 1     I CBO

SSGMCE
Shegaon
Considering PNP transistor

of the equivalent circuit,
I E 1  I A , I C  I C1 ,  1 ,
I CBO  I CBO1 , I B  I B1
 I B1  I A 1  1   I CBO1    1
SSGMCE
Shegaon
Considering NPN transistor

of the equivalent circuit,
I C  I C2 , I B  I B2 , I E2  I K  I A  I G
I C2   2 I k  I CBO2
I C2   2  I A  I G   I CBO2     2 

SSGMCE
Shegaon
From the equivalent circuit,

we see that
 I C2  I B1
 2 I g  I CBO1  I CBO 2
 IA 
1  1   2 
SSGMCE
Shegaon
Case 1: When I g  0
I CBO1  I CBO2
IA 
1  1   2 
Case 2: When I G  0
 2 I g  I CBO1  I CBO 2
IA 
1  1   2 

METHODS OF THYRISTOR TURN-ON
SSGMCE
Shegaon
 Thermal Triggering
 Light Triggering
 High Voltage Triggering
 dv/dt Triggering
 Gate Current
• DC Triggering
• AC Triggering
• Pulse Triggering

GATE TRIGGERING METHODS
SSGMCE
Shegaon
Efficient & reliable method for turning on SCR.

 Types
 R - Triggering.
 RC - Triggering.
 UJT - Triggering.

R-TRIGGERING
vO
SSGMCE
Shegaon a b
LOAD
i R1
R2
v S = V m s in t
D VT
R Vg
Resistance firing circuit

RC TRIGGERING
SSGMCE
Shegaon vO
LO A D
+
R
D2 VT
-
v S = V m sin t
D1
VC C
RC half-wave trigger circuit

UJT - Triggering
SSGMCE
Shegaon
Waveforms
UJT Triggering Circuit

SCR trigger circuit using DIAC
SSGMCE
Shegaon

SCR trigger circuit using Optocoupler
SSGMCE
Shegaon

TURN-ON
CHARACTERISTICS
SSGMCE
Shegaon
ton  t d  t r

HOW DO YOU TURN IT OFF?
SSGMCE
Shegaon
 Cause the forward current to fall below the value of the

“holding” current, IH
 Reverse bias the device

Turn-off Characteristics
SSGMCE
Shegaon VAK
tC
tq
IA
di
C o m m u ta t io n
A n o d e c u rr e n t dt
b e g in s to
d e cr e a s e R e c o ve r y R e c o m b in a tio n
t1 t2 t3 t4 t5
t q = d e v ic e o ff t im e
tr r tg r
t c = c ir c u it o ff tim e
tq
tc

TRIAC
SSGMCE
Shegaon
 TRIAC is used for the control of power in AC circuits.

 It is equivalent of two reverse parallel-connected SCRs
with one common gate.
 Conduction can be achieved in either direction with an
appropriate gate current. it is thus a bi-directional gate
controlled thyristor with three terminals.

STRUCTURE AND SYMBOL OF
TRIAC
SSGMCE
Shegaon

TRIAC CHARACTERISTICS
SSGMCE
Shegaon

SSGMCE
ADVANTAGES OF THE TRIAC:
Shegaon
 The TRIAC has the following advantages:
(i) They can be triggered with positive- or negative-polarity

voltage.
(ii) They need a single heat sink of slightly larger size.
(iii) They need a single fuse for protection, which simplifies
their construction.
(iv) In some dc applications, the SCR has to be connected
with a parallel diode for protection against reverse voltage,
whereas a TRIAC may work without a diode, as safe
breakdown in either direction is possible.

DISADVANTAGES OF THE TRIAC:
SSGMCE
Shegaon
 The TRIAC has the following disadvantages:
(i) TRIACs have low dv/dt ratings compared to SCRs.

(ii) Since TRIACs can be triggered in either direction, the
trigger circuits with TRIACs needs careful consideration.
(iii) Reliability of TRIACs is less than that of SCRs.

SIMPLE APPLICATIONS OF THE
TRIAC:
SSGMCE
Shegaon
 TheTRIAC as a bidirectional thyristor has

various applications. Some of the popular
applications of the
TRIAC are as follows:
(i) In speed control of single-phase ac series or universal motors.
(ii) In food mixers and portable drills.
(iii) In lamp dimming and heating control.
(iv) In zero-voltage switched ac relay.

DIAC
SSGMCE
Shegaon
 DIAC is like a TRIAC without a gate terminal.

 DIAC conducts current in both directions depending on
the voltage connected to its terminals.

DIAC CHARACTERISTICS
SSGMCE
Shegaon  When the voltage between the two terminals greater than the
break down voltage, the DIAC conducts and the current goes in
the direction from the higher voltage point to the lower voltage
one.
 The DIAC used in firing circuits of thyristors since its breakdown
voltage used to determine the firing angle of the thyristor.

GTO
O
SSGMCE (Gate Turn-off Thyristors)
Shegaon
 Turned on by applying positive gate signal.

 Turned off by applying negative gate signal.
 On state voltage is 3.4V for 550A, 1200V GTO.
 Controllable peak on-state current ITGQ is the peak
value of on-state current which can be turned-off by

gate control.

GATE- TURN- OFF THYRISTOR—
GTO
SSGMCE
Shegaon
Major difference from conventional thyristor:

The gate and cathode structures are highly
interdigitated , with various types of geometric
forms being used to layout the gates and cathodes.

PHYSICS OF GTO OPERATION
SSGMCE
Shegaon
The basic operation of GTO is the
same as that of the conventional
A thyristor. The principal differences
IA lie in the modifications in the
PNP structure to achieve gate turn- off
V1
Ic2
capability.
R
IG  Large α2
G Ic1
 α1+α2 is just a little larger than
V2
NPN the critical value 1.
S EA
IK  Short distance from gate to cathode
EG makes it possible to drive current
K out of gate.

O Advantages over SCRs
SSGMCE
Shegaon
 Elimination of commutating components.
 Reduction in acoustic & electromagnetic noise due to
elimination of chokes.
 Faster turn-off, therefore can be used for higher
switching frequencies.
 Improved efficiency of converters.
Advantages over BJTs

 Higher voltage blocking capabilities.
 High on-state gain.
 High ratio of peak surge current to average current.
 A pulsed gate signal of short duration only is required.

O Disadvantages of GTOs
SSGMCE
Shegaon
 On-state voltage drop is more.
 Due to multi cathode structure higher gate current is
required.
 Gate drive circuit losses are more.
 Reverse blocking capability is less than its forward

blocking capability.

POWER MOSFETS
SSGMCE
 Two Types
Shegaon
 Depletion Type
 Channel region is already diffused between the Drain and Source
 Deplete, or “pinch-off” the Channel
 types :
a) N-Channel Depletion Type

b) P-Channel Depletion Type
 Enhancement Type
 No channel region exists between the Drain and Source
 “Invert” the region between the Drain and Source to induce a channel
 types :
a) N-Channel Enhancement Type

b) P-Channel Enhancement Type

DEPLETION MOSFET
SSGMCE
Shegaon Construction and Symbol :

A) N-CHANNEL DEPLETION MOSFET
SSGMCE
Shegaon
Normally Reverse-Bias the Gate-Source Junction

ENHANCEMENT MOSFET
SSGMCE
Shegaon

A) N-CHANNEL ENHANCEMENT
MOSFET
SSGMCE
Shegaon
The Gate-Source Junction will be Forward-Biased

The bias voltage must be greater than a “threshold” voltage
A Channel region is induced between the Drain and Source

DRAIN CHARACTERISTICS
SSGMCE
Shegaon

STEADY-STATE CHARACTERISTICS
SSGMCE
Shegaon

SWITCHING CHARACTERISTICS
SSGMCE
Shegaon

EQUIVALENT CIRCUIT
SSGMCE
Shegaon

SWITCHING MODEL
SSGMCE
Shegaon

SWITCHING WAVEFORMS AND TIMES
SSGMCE
Shegaon

SWITCHING WAVEFORMS AND TIMES
SSGMCE
Shegaon

SSGMCE
Shegaon
Turn-on Delay, td(on) = time to charge the input capacitance to

VT
Rise time, tr = Charging time to charge the input capacitance to
the full gate voltage, VGSP in order to drive the transistor into
the linear region of operation

SSGMCE
Shegaon
Turn-off delay time, td(off) = time for the input capacitance to

discharge from “overdrive” voltage V1 to pinch-off.
VGS must decrease significantly for VDS to rise.
Fall time, tf = time for the input capacitance to discharge from
pinch-off to the threshold voltage.

TYPES OF MOSFET
PHYSICS OF MOSFET OPERATION (OFF-
STATE)
SSGMCE
Shegaon
p-n- junction is reverse-biased off-state voltage appears across

n- region

STATE)

SSGMCEp-n- junction is slightly reverse biased positive gate voltage
Shegaon
induces conducting channel drain current flows through n-
region an conducting channel on resistance = total
resistances of n- region,conducting channel,source and
drain contacts, etc.

STATIC CHARACTERISTICS OF POWER
SSGMCE
Shegaon
iD
[UGS-VGS(th)=UDS]
Ohmic
VGS5
Active
VGS4 VGS5> VGS4 etc.
VGS3
VGS2 Cut off
VGS1
BVDSS
O UDS
VGS< VGS(th)

SWITCHING CHARACTERISTICS OF
POWER MOSFET
SSGMCE
+U E up
Shegaon
RL O t
iD uGS
uGSP
uT
Rs O
RG uGS R iD t
F iD
up
O td(on) tr td (off) tf t
-Turn- on transient
-Turn- off transient
–Turn- on delay time td(on)
–Turn- off delay time td(off)
–Rise time tr
–Falling time tf
EXAMPLES OF COMMERCIAL POWER
MOSFET
SSGMCE
Shegaon
part num ber Rated m ax voltage R ated vag current R on Q g(typical)

IRFZ48 60V 50A 0.018Ω 110nC
IRF510 100V 5.6A 0.54Ω 8.3 nC
IRF540 100V 28A 0.077Ω 72 nC
APT105M 25BN 100V 75A 0.025Ω 171 nC
R IRF740 400V 10A 0.55Ω 63 nC
8.3 nC
M TM 15N40E 400V 15A 0.3Ω 110 nC
APT5025BN 500V 23A 0.25Ω 83nC
APT1001RBNR 1000V 11A 1.0Ω 150 nC

IGBT: INSULATED-GATE BIPOLAR
SSGMCE
Shegaon TRANSISTOR
 Combination BJT and MOSFET
 HighInput Impedance (MOSFET)
 Low On-state Conduction Losses (BJT)
 High Voltage and Current Ratings

 Symbol

SSGMCE
FEATURES :
Shegaon On- state losses are much smaller than those of a
power MOSFET, and are comparable with those of a
GTR
Easy to drive —similar to power MOSFET
Faster than GTR, but slower than power MOSFET
 Structure and operation principle of IGBT
Also multiple cell structure Basic structure similar to

power MOSFET, except extra p region On- state:
minority carriers
are injected into drift region, leading to conductivity
modulation
compared with power MOSFET: slower switching
times, lower on- resistance, useful at higher voltages
(up to 1700V)
Cross-Sectional View of an IGBT
SSGMCE
Shegaon
Emitter Gate
E G
N+ N+ N+ N+
P P
J3 J2 N- Drift region
N+ Buffer layer
J1 P + Injecting layer
C Collector

IGBT EQUIVALENT CIRCUIT FOR VGE<VT
SSGMCE
Shegaon

IGBT EQUIVALENT CIRCUIT FOR VGE>VT
SSGMCE
Shegaon

IGBT OUTPUT CHARACTERISTICS
SSGMCE
Shegaon

IGBT TRANSFER CHARACTERISTIC
SSGMCE
Shegaon

IGBT USED AS A SWITCH
SSGMCE
Shegaon

SWITCHING CHARACTERISTICS OF
IGBT
SSGMCE
Shegaon
UGE UGEM
90%UGEM
10%UGEM
0 t
IC ICM
90%ICM td(on) t r td(off) tf
t fi1 t fi2
10%ICM current tail
0 t
ton toff
UCE UCEM
t fv1 t fv2
UCE（on）
0 t

ADVANTAGES OF IGBT
SSGMCE
Shegaon
 Combines the advantages of BJT & MOSFET

 High input impedance like MOSFET
 Voltage controlled device like MOSFET
 Simple gate drive, Lower switching loss
 Low on state conduction power loss like BJT
 Higher current capability & higher switching speed than

a BJT. ( Switching speed lower than MOSFET)

Applications of IGBT
SSGMCE
Shegaon
 ac and dc motor controls.

 General purpose inverters.
 Uninterrupted Power Supply (UPS).
 Welding Equipments.
 Numerical control, Cutting tools.
 Robotics & Induction heating.

EXAMPLES OF COMMERCIAL IGBT
SSGMCE
Shegaon

BIPOLAR JUNCTION TRANSISTOR (BJT)
FAIRCHILD FGA25N120AND IGBT
SSGMCE
Shegaon

SSGMCE
Shegaon

SSGMCE
Shegaon

SSGMCE
Shegaon

SSGMCE
Shegaon

SSGMCE
Shegaon

SSGMCE
Shegaon

OTHER NEW POWER ELECTRONIC
SSGMCE
DEVICES
Shegaon
Static induction transistor —SIT
Static induction thyristor —SITH
MOS controlled thyristor —MCT
Integrated gate- commutated thyristor —IGCT
Power integrated circuit and power module
1) Static induction transistor—SIT
Another name: power junction field effect transistor—power
JFET Features
–Major- carrier device
–Fast switching, comparable to power MOSFET
–Higher power- handling capability than power MOSFET
–Higher conduction losses than power MOSFET
–Normally- on device, not convenient (could be made normally-
off, but with even higher on-state losses)

REVIEW OF DEVICE CLASSIFICATIONS
SSGMCE Current- driven (current- controlled) devices:

Shegaon thyristor, GTO, GTR
power electronic
devices
Voltage- driven (voltage- controlled) devices
(Field- controlled devices):power MOSFET,IGBT,
SIT, SITH, MCT, IGCT
Pulse- triggered devices: thyristor, GTO

power electronic
devices
Level- sensitive (Level- triggered) devices:
GTR, power MOSFET, IGBT, SIT, SITH,MCT, IGCT
Uni- polar devices (Majority carrier devices):

SBD, power MOSFET, SIT
power electronic Bipolar devices (Minority carrier devices):

devices ordinary power diode, thyristor, , GTO, GTR,
IGCT, IGBT, SITH, MCT
Composite devices: IGBT, SITH, MCT

Phase Control Thyristors
SSGMCE
Shegaon

Fast switching Thyristors
SSGMCE
Shegaon

Comparison between different
SSGMCE commonly used Thyristors
Shegaon
 Line Commutated Thyristors available up to 6000V,

4500A.
 Ex: Converter grade (line commutated) SCR.
 V / I rating: 5KV / 5000A
 Max. Frequency: 60Hz.
 Switching time: 100 to 400sec.
 On state resistance: 0.45m.

Example of Inverter Grade
SSGMCE
Shegaon
Thyristor Ratings
V / I rating: 4500V / 3000A.
 Max. Frequency: 20KHz.

Example of Triac Ratings
SSGMCE
Shegaon
 Used in heat / light control, ac motor control circuit

 V / I rating: 1200V / 300A.
 Max. Frequency: 400Hz.

Example of Power MOSFET Ratings
SSGMCE
Shegaon
 Used in high speed power converters like

inverters & choppers.
 Ratings up to 1000V / 100A.
 Example: MOSFET 800V / 7.5A rating.
 Switching time: 1.6sec.

Example of IGBT Ratings
SSGMCE
Shegaon
 Used in high voltage / current & high frequency

switching power applications (Inverters, SMPS).
 Example: IGBT 2500V / 2400A.
 Switching time: 5 to sec.

1. SCS
Structure Equivalent circuit for

Symbol SCS
112
SSGMCE
Shegaon
Thank You

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POWER ELECTRONICS

Prof. V. N. Bhonge Dept. of E & T

improved series inverter, parallel inverter, output voltage and

Prof. V. N. Bhonge Dept. of E & T

Prof. V. N. Bhonge Dept. of E & T

Prof. V. N. Bhonge Dept. of E & T

Prof. V. N. Bhonge Dept. of E & T

• "Electronic power converter" is the term that is used to refer

• Rectifier converting an AC voltage to a DC voltage,

• Inverter converting a DC voltage to an AC

Prof. V. N. Bhonge Dept. of E & T

Prof. V. N. Bhonge Dept. of E & T

Prof. V. N. Bhonge Dept. of E & T

Thyristor Opened the power electronics era

Use in high power situation.

 Resistivity of Silicon is 33x102Ωm

Prof. V. N. Bhonge Dept. of E & T

Prof. V. N. Bhonge Dept. of E & T

Prof. V. N. Bhonge Dept. of E & T

Prof. V. N. Bhonge Dept. of E & T

Prof. V. N. Bhonge Dept. of E & T

Current 4kA 400A 200A 5kA 1.2kA 4kA

Switch na 5kHz 1MHz 2kHz 100kHz 1kHz

On-state 2V 1-2V I* Rds 2-3V 2-3V 3V

Prof. V. N. Bhonge Dept. of E & T

Prof. V. N. Bhonge Dept. of E & T

FRED : Fast Recovery Epitaxial Diodes

Prof. V. N. Bhonge Dept. of E & T

Prof. V. N. Bhonge Dept. of E & T

Prof. V. N. Bhonge Dept. of E & T

Prof. V. N. Bhonge Dept. of E & T

Prof. V. N. Bhonge Dept. of E & T

Prof. V. N. Bhonge Dept. of E & T

Prof. V. N. Bhonge Dept. of E & T

Prof. V. N. Bhonge Dept. of E & T

Structure Equivalent circuit

Prof. V. N. Bhonge Dept. of E & T

Equivalent circuit: A pnp transistor and an npn

Prof. V. N. Bhonge Dept. of E & T

Prof. V. N. Bhonge Dept. of E & T

 For 0 < VAK < VBR(F),

 Turn Q2 ON by applying a current

 This causes Q1 to turn ON, and

 If the Gate pulse is removed, Q1

Prof. V. N. Bhonge Dept. of E & T

The general transistor equations are,

Prof. V. N. Bhonge Dept. of E & T

Considering PNP transistor

Considering NPN transistor

Prof. V. N. Bhonge Dept. of E & T

From the equivalent circuit,

Prof. V. N. Bhonge Dept. of E & T

 High Voltage Triggering

Prof. V. N. Bhonge Dept. of E & T

Efficient & reliable method for turning on SCR.

Prof. V. N. Bhonge Dept. of E & T

Resistance firing circuit

Prof. V. N. Bhonge Dept. of E & T

RC half-wave trigger circuit