Physical Verification
Physical Verification
Physical Verification
AGENDA
Design rule checks are nothing but physical checks of metal width, pitch and spacing
requirement for the different layers with respect to different manufacturing process.
If we give physical connection to the components without considering the DRC rules,
then it will lead to failure of functionality of chip, so all DRC violations has to be cleaned
up.
After the completion of physical connection, we check each and every polygon in the
design, based on the design rules and reports all the violations. This whole process is
called Design Rule Check.
DRC (DESIGN RULE CHECK)
Short Violation
Solution
DRC (DESIGN RULE CHECK)
Solution
DRC (DESIGN RULE CHECK)
Solution
DRC (DESIGN RULE CHECK)
Solution
DRC (DESIGN RULE CHECK)
VIA Misalignment
Solution
LVS (LAYOUT VS SCHAMETIC)
Reduction
All the defined information is extracted in the form of netlist.
LVS (LAYOUT VS SCHEMATIC)
Comparison
The extracted layout netlist is then compared to the netlist of the same stage using the LVS
rule deck. In this stage the number of instances, nets and ports are compared. All the
mismatches such as shorts and opens, pin mismatch etc.. are reported. The tools also checks
topology and size mismatch.
Antenna Check The antenna effect is caused by the charges collected on the floating
interconnects, which are connected to only a gate oxide. During the metallization, long
floating interconnects act as temporary capacitors and store charges gained from the
energy provided by fabrication steps such as plasma etching and CMP. If the collected
charges exceed a threshold, the Fowler-Nordheim (F-N) tunneling current will discharge
through the thin oxide and cause gate damage. On the other hand, if the collected
charges can be released before exceeding the threshold through a low impedance path,
such as diffusion, the gate damage can be avoided
ANTENNA CHECKS
Antenna Check For example, considering the routing in Figure A, the interconnects are
manufactured in the order of poly, metal 1, and metal 2. After manufacturing metal 1 (see
Figure B), the collected charges on the right metal 1 pattern may cause damage to the
connected gate oxide. The discharging path is constructed after manufacturing metal 2
(see Figure C), and thus the charges can be released through the connected diffusion on
the left side.
ANTENNA CHECKS