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    MOSFET Operation

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    Abhishek Singh
    The document discusses MOSFET operation. It describes how MOSFETs work by adding source and drain terminals to a MOS capacitor to form an NMOS or PMOS transistor. It explains linear and saturation regions of the N-channel MOSFET I-V curve. The gradual channel approximation method simplifies derivation of the current-voltage relationship. Threshold voltage and channel length modulation effects are also covered.

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    MOSFET Operation

    Uploaded by

    Abhishek Singh
    818 views26 pages
    The document discusses MOSFET operation. It describes how MOSFETs work by adding source and drain terminals to a MOS capacitor to form an NMOS or PMOS transistor. It explains linear and saturation regions of the N-channel MOSFET I-V curve. The gradual channel approximation method simplifies derivation of the current-voltage relationship. Threshold voltage and channel length modulation effects are also covered.

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    The document discusses MOSFET operation. It describes how MOSFETs work by adding source and drain terminals to a MOS capacitor to form an NMOS or PMOS transistor. It explains linear and saturation regions of the N-channel MOSFET I-V curve. The gradual channel approximation method simplifies derivation of the current-voltage relationship. Threshold voltage and channel length modulation effects are also covered.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    818 views26 pages

    MOSFET Operation

    Uploaded by

    Abhishek Singh
    The document discusses MOSFET operation. It describes how MOSFETs work by adding source and drain terminals to a MOS capacitor to form an NMOS or PMOS transistor. It explains linear and saturation regions of the N-channel MOSFET I-V curve. The gradual channel approximation method simplifies derivation of the current-voltage relationship. Threshold voltage and channel length modulation effects are also covered.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    of 26

    MOSFET Operation

    Dr. Arti Noor,


    M. Tech Division, CDAC Noida.
    Email : [email protected]

    29-9-2009 BVDLecture-4
      MOSFET
    • Now add source and drain to MOS capacitor. The new structure is called
    MOS transistor.
    • Two types of MOS transistors : NMOS and PMOS

    • The distance between S and D is called channel length L and lateral extent
    of channel is width W. Both W and L are very important parameters. The
    channel is formed through applied gate voltage between S and D.

    BVDLecture-4
     MOSFET Types

    BVDLecture-4
    N-Channel MOSFET Operation

    BVDLecture-4
    N-Channel MOSFET Operation

    • When Vgs > Vto is applied on gate inversion layer is formed. Source and
    drain are connected through a n-type channel.
    • Gate Voltage is applied with respect to source then Vto is same as in case
    of MOS Capacitor.
    BVDLecture-4
    Threshold Voltage in MOSFET Case

    QBoQox QB −QBo
    Vt = QGC − 2φ F − − −
    Cox Cox Cox

    QB −QBo
    = Vto −
    Cox

    BVDLecture-4
    Threshold Voltage in MOSFET Case

    QB − QB o
    Co x = −
    2 q⋅ N A⋅ε si
    Co x • ( − 2 φ F + VS B − − 2φ F )

    BVDLecture-4
    BVDLecture-4
    N-Channel MOSFET Operation : I-V Curve (1)
    NMOS in Linear Region :
    • if small drain voltage is applied, drain current flows through the conducting
    channel.
    • As drain voltage increases, drain current also increases linearly with
    voltage. The channel region acts as voltage controlled resistor.
    • This operation mode is called linear mode.

    BVDLecture-4
    N-Channel MOSFET Operation : I-V Curve (2)
    NMOS in saturation Region :
    • As drain voltage increases again, the gate voltage is not sufficient to
    maintain channel below the gate.
    • The charge and channel depth start to decrease at drain end. At Vds =Vdsat
    the charge and depth at drain end become zero.
    • This point is called pinch off point. Beyond pinch-off depletion region forms
    adjacent to drain and grows to source with increasing Vds .
    • This operation mode is called saturation mode. Near pinch-off point, high
    field region forms between channel-end and drain. Electrons arriving at this
    end injected to drain region and accelerated to drain.

    BVDLecture-4
    N-Channel MOSFET Operation : I-V Curve (3)

    • 3-D analysis of this system is very complex to


    establish the I-V relation of NMOS.

    • Several approximations be made to simplify


    the problem.

    • The Gradual-Channel Approximation (GCA) is


    used which converts 3D problem into 1-D for
    analytic derivation of I-V.
    BVDLecture-4
    Gradual Channel Approximation (GCA)

    BVDLecture-4
    Gradual Channel Approximation (GCA)(2)

    • This means entire channel region is inverted.


    • Assume QI(y) is the charge in inversion layer which is function of Vgs and
    Vcs (y) and can be defined as

    • Inversion layer thickness varies from S to D. Now consider incremental


    resistance dR of differential channel region and assume constant surface
    mobility μn of electrons in channel.

    BVDLecture-4
    Gradual Channel Approximation (GCA)(3)
    • Now assume current density is uniform across the segment.
    • Voltage drop along the incremental segment in y-direction is

    Arrange and integrate along the channel : 0<y<L, 0<Vcs <Vds

    L VDS

    ∫I
    0
    D dy = Wµn COX ∫ (V
    0
    GS − VCS − VTO )dVCS

    BVDLecture-4
    Gradual Channel Approximation (GCA)(4)

    BVDLecture-4
    Current – Voltage Characteristic
    • Given : W =20μm, L=2μm, Vt0=1.0V, k=0.42 mA / V2

    BVDLecture-4
    Current – Voltage Characteristic
    • Saturation region current equation.

    BVDLecture-4
    Current – Voltage Characteristic
    • Saturation region current equation.

    BVDLecture-4
    Channel Length Modulation

    For Vds > Vdsat

    BVDLecture-4
    Channel Length Modulation
    • Electrons now have to travel L’ length. One can write current equation
    again replacing L by L’. GCA still holds.

    Simplify the expression

    BVDLecture-4
    Channel Length Modulation

    BVDLecture-4
    Substrate Bias Effects

    BVDLecture-4
    Current-Voltage Summary

    BVDLecture-4
    Current-Voltage Summary

    BVDLecture-4
    Assignment

    1. Explain accumulation, depletion and inversion


    conditions for PMOS transistor with the help of
    cross section view of transistor.

    2. Exercise 3.7 of Chapter-3 from Kang’s book.

    BVDLecture-4
    Next Class Topic

    MOSFET Scaling and Small Geometry Effects.

    BVDLecture-4

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