Scribd Logo
Upload

Welcome to Scribd!

  • 93 views

    Diode

    Uploaded by

    prasanthi
    A PN junction forms a depletion layer or potential barrier when a P-type semiconductor is joined with an N-type semiconductor. Under forward bias, the barrier is lowered and current flows easily through the junction. Under reverse bias, the barrier height increases and very little current can flow. The V-I characteristics of a PN junction show it acts like an open switch under reverse bias and a closed switch under forward bias. Key terms like knee voltage, breakdown voltage, and maximum power rating describe the junction's operating limits and efficiency. Diode equivalent circuits like the approximate, simplified, and ideal models represent its nonlinear behavior in electronic circuits.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as DOCX, PDF, TXT or read online from Scribd

    Diode

    Uploaded by

    prasanthi
    93 views3 pages
    A PN junction forms a depletion layer or potential barrier when a P-type semiconductor is joined with an N-type semiconductor. Under forward bias, the barrier is lowered and current flows easily through the junction. Under reverse bias, the barrier height increases and very little current can flow. The V-I characteristics of a PN junction show it acts like an open switch under reverse bias and a closed switch under forward bias. Key terms like knee voltage, breakdown voltage, and maximum power rating describe the junction's operating limits and efficiency. Diode equivalent circuits like the approximate, simplified, and ideal models represent its nonlinear behavior in electronic circuits.

    Copyright

    © Attribution Non-Commercial (BY-NC)

    Available Formats

    DOCX, PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    A PN junction forms a depletion layer or potential barrier when a P-type semiconductor is joined with an N-type semiconductor. Under forward bias, the barrier is lowered and current flows easily through the junction. Under reverse bias, the barrier height increases and very little current can flow. The V-I characteristics of a PN junction show it acts like an open switch under reverse bias and a closed switch under forward bias. Key terms like knee voltage, breakdown voltage, and maximum power rating describe the junction's operating limits and efficiency. Diode equivalent circuits like the approximate, simplified, and ideal models represent its nonlinear behavior in electronic circuits.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    93 views3 pages

    Diode

    Uploaded by

    prasanthi
    A PN junction forms a depletion layer or potential barrier when a P-type semiconductor is joined with an N-type semiconductor. Under forward bias, the barrier is lowered and current flows easily through the junction. Under reverse bias, the barrier height increases and very little current can flow. The V-I characteristics of a PN junction show it acts like an open switch under reverse bias and a closed switch under forward bias. Key terms like knee voltage, breakdown voltage, and maximum power rating describe the junction's operating limits and efficiency. Diode equivalent circuits like the approximate, simplified, and ideal models represent its nonlinear behavior in electronic circuits.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    of 3

    Q. 1: What is a PN junction? Explain the formation of depletion layer (potential barrier) in a PN junction. Q.

    2: Discuss the behavior of a PN junction under forward and reverse biasing. Q.3: Draw and Explain the V-I Characteristics of a PN Junction. Q.4: Explain the following terms relating to PN junction (a) Knee Voltage (b) Break down voltage (c) Forward Current (d) Reverse Current (e) Maximum Forward Current (f) PIV (g) Maximum Power rating (f) Static and dynamic forward resistances (g) Reverse Resistances Q.5: Draw and explain the crystal diode equivalent circuits and models. (a) Approximate Model (b) Simplified model (c) ideal diode Q.6: Write the diode current equation and significance of used symbols. Explain the temperature effect on diode current. Q.7: Explain the limitations in the operating conditions of PN junction. Q.8: An a.c voltage of peak value of 20V is connected in series with a Si diode and a load resistance of 500 . If the forward resistance of diode is 10 find: (i) Peak current through diode (ii) Peak Output Voltage What will be these values if the diode is assumed to be ideal? Ans:(i) 37.8 mA, 18.9 V (ii) 40 mA, 20 V Q.9: Fig (1) Find the current through the diode .Assume diode to be ideal. Ans: 200 mA Q10: Fig (2) Calculate the current through 48 resistor. Assume Si diode and forward resistance of each diode is 1 . Ans: 172 mA

    Fig (1)

    Fig (2)

    Q.11: Fig (3) Find the voltage VA using simplified model. Ans: 19.7 V Q.12: Fig (4) Determine the current I. Assume Si diodes and forward resistance of diodes to be zero. Ans: 9.65 mA

    Fig (3)

    Fig (4)

    Q.13: Fig (5) Find VQ and ID. Use simplified model. Ans: ID = 1.55 mA, VQ = 6.2 V Q.14: Fig (6) Determine the current through each diode. Use simplified model. Assume diode to be similar. Ans: 14.3 mA

    Fig (5)

    Fig (6)

    Q.15: Fig (7) Determine the currents I1, I2, I3. Use simplified model. Ans: I1=3.32 mA. I2= 0.212 mA, I3= 3.108 mA Q.16: Fig (8) Determine whether the diode is reversed biased or forward biased? Ans: Forward Q.17: Fig (9) Determine the state of diode and find ID and VD. Ans: OFF state, ID=0, VD=0.4V

    Fig (7)

    Fig (8)

    Fig(9)

    Q.18: Fig (10) what is the current in circuit. Assume the diode to be ideal. Ans: 10 mA Q.19: Fig (11) using equivalent, determine the current in the circuit. Assume the forward resistance of the diode to be 2 . Ans: 358 mA

    Fig (10) Q.20: Fig (12) Find the voltage VA and Current I in the circuit. Q.21: Fig (13) Determine the magnitude of VA.

    Fig (11) Ans: 14 V, 2 mA Ans: 9.5V

    Fig (12)

    Fig (13)

    Q.22: Determine VO, I1, ID1 and ID2 for the parallel diode configuration of fig (14). Ans: VO = 0.7 V and ID1= ID2= 14.09 mA Q.23: Determine the dc resistance levels for the diode from its characteristics shown in fig (15). Ans: Forward resistances: 250 , 40 , reverse resistance: 10 M

    Fig (14)

    Fig (15)

    Q.24: A Germanium diode carries a current of 1 mA at room temperature when a forward bias of 0.15 V is applied. Estimate the reverse saturation current at room temperature. Ans: 2.5 A

    You might also like