2SD2012

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SD2012
Audio Frequency Power Amplifier Applications
Unit: mm

Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A) High power dissipation: PC = 25 W (Tc = 25C)

Absolute Maximum Ratings (Ta = 25C)

JEDEC JEITA

TOSHIBA 2-10R1A Note 1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 1.7 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

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Electrical Characteristics (Ta = 25C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE fT Cob Test Condition VCB = 60 V, IE = 0 VEB = 7 V, IC = 0 IC = 50 mA, IB = 0 VCE = 5 V, IC = 0.5 A VCE = 5 V, IC = 2 A IC = 2 A, IB = 0.2 A VCE = 5 V, IC = 0.5 A VCE = 5 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz Min 60 100 20 Typ. 0.4 0.75 3 35 Max 100 100 320 1.0 1.0 V V MHz pF Unit A A V

Marking

D2012

Part No. (or abbreviation code) Lot No.

Note 2

Note 2: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.

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2SD2012

IC VCE
3.0 90 100 80 70 60 50 40 30 20 IB = 10 mA 1.0 1000 500 Tc = 100C

hFE IC
Common emitter VCE = 5 V

2.5

DC current gain hFE

(A)

300

25 25

Collector current IC

2.0

100 50 30

1.5

0.5

Common emitter Tc = 25C 1 2 3 4 5 6 7

10 0.01

0.03 0.05

0.1

0.3 0.5

0 0

Collector current IC

(A)

Collector-emitter voltage

VCE (V)

VCE (sat) IC
3.0

IC VBE
Common emitter VCE = 5 V

Collector-emitter saturation voltage VCE (sat) (V)

1 0.5 0.3

Common emitter IC/IB = 10

2.5

(A)
25 25

Collector current IC

Tc = 100C

2.0

0.1 0.05 0.03

1.5

1.0

Tc = 100C

25

25

0.5 0.01 0.01

0.03 0.05

0.1

0.3 0.5

Collector current IC

(A)

0 0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Base-emitter voltage

VBE (V)

PC Ta
30 (1) (1) Ta = Tc Infinite heat sink (2) No heat sink 10

Safe Operating Area

(W)

25

PC

(A)

1 ms* IC max (continuous) DC operation Tc = 25C 10 ms* 100 ms*

Collector power dissipation

15

Collector current IC

20

1 0.5 0.3 *: Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 3 5 10 30 50

10

(2) 0.1 1 25 50 75 100 125 150 175

VCEO max 100 300

0 0

Collector-emitter voltage

Ambient temperature Ta (C)

VCE (V)

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rth tw
100 Curves apply only to limited areas of thermal 50 resistance. Single nonrepetitive pulse (1) No heat sink Ta = 25C (2) infinite heat sink Tc = 25C 10 5 3 (2) (1)

Transient thermal resistance rth (C/W)

30

1 0.5 0.3 0.001 0.01 0.1 1 10 100

Pulse width

tw

(s)

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2SD2012
RESTRICTIONS ON PRODUCT USE
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Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS PRODUCT DESIGN OR APPLICATIONS. Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. 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ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). 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