DATA SHEET

www.onsemi.com

Complementary Bipolar 15 AMPERES

Power Transistors COMPLEMENTARY
SILICON POWER
MJL3281A (NPN) TRANSISTORS
MJL1302A (PNP) 260 VOLTS
200 WATTS
Features
 Exceptional Safe Operating Area PNP NPN
 NPN/PNP Gain Matching within 10% from 50 mA to 5 A COLLECTOR 2, 4 COLLECTOR 2, 4
 Excellent Gain Linearity
 High BVCEO
1 1
 High Frequency BASE BASE
 These Devices are Pb−Free and are RoHS Compliant*
Benefits EMITTER 3 EMITTER 3

 Reliable Performance at Higher Powers

 Symmetrical Characteristics in Complementary Configurations MARKING DIAGRAM
 Accurate Reproduction of Input Signal
 Greater Dynamic Range
 High Amplifier Bandwidth MJLxxxxA
1 AYYWWG
Applications 2
3
 High−End Consumer Audio Products
 Home Amplifiers TO−264 1 3
CASE 340G
 Home Receivers BASE EMITTER
STYLE 2 2 COLLECTOR
 Professional Audio Amplifiers
 Theater and Stadium Sound Systems xxxx = 3281 or 1302
 Public Address Systems (PAs) A = Location Code
YY = Year
WW = Work Week
MAXIMUM RATINGS (TJ = 25C unless otherwise noted) G = Pb−Free Package

Rating Symbol Value Unit

Collector−Emitter Voltage VCEO 260 Vdc
ORDERING INFORMATION

Collector−Base Voltage VCBO 260 Vdc Device Package Shipping

Emitter−Base Voltage VEBO 5.0 Vdc MJL3281AG TO−264 25 Units/Rail

(Pb−Free)
Collector−Emitter Voltage − 1.5 V VCEX 260 Vdc
Collector Current − Continuous IC 15 Adc MJL1302AG TO−264 25 Units/Rail
(Pb−Free)
Collector Current − Peak (Note 1) ICM 25 Adc
*For additional information on our Pb−Free strategy
Base Current − Continuous IB 1.5 Adc and soldering details, please download the onsemi
Soldering and Mounting Techniques Reference
Total Power Dissipation @ TC = 25C PD 200 Watts
Manual, SOLDERRM/D.
Derate Above 25C 1.43 W/C

Operating and Storage Junction Tempera- TJ, Tstg − 65 to C

ture Range +150

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RJC 0.625 C/W

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.

 Semiconductor Components Industries, LLC, 2013 1 Publication Order Number:

October, 2024 − Rev. 12 MJL3281A/D
 MJL3281A (NPN) MJL1302A (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage VCEO(sus) Vdc
(IC = 100 mAdc, IB = 0) 260 −

Collector Cutoff Current ICBO Adc

(VCB = 260 Vdc, IE = 0) − 50

Emitter Cutoff Current IEBO Adc

(VEB = 5 Vdc, IC = 0) − 5

SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased IS/b Adc
(VCE = 50 Vdc, t = 1 s (non−repetitive) 4 −
(VCE = 100 Vdc, t = 1 s (non−repetitive) 1 −
ON CHARACTERISTICS
DC Current Gain hFE
(IC = 500 mAdc, VCE = 5 Vdc) 75 150
(IC = 1 Adc, VCE = 5 Vdc) 75 150
(IC = 3 Adc, VCE = 5 Vdc) 75 150
(IC = 5 Adc, VCE = 5 Vdc) 75 150
(IC = 8 Adc, VCE = 5 Vdc) 45 −

Collector−Emitter Saturation Voltage VCE(sat) Vdc

(IC = 10 Adc, IB = 1 Adc) − 3

DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product fT MHz
(IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz) 30 −

Output Capacitance Cob pF

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz) − 600

Product parametric performance is indicated in the indicated by the Electrical Characteristics if operated under
Electrical Characteristics for the listed test conditions, different conditions.
unless otherwise noted. Product performance may not be

www.onsemi.com
2
 MJL3281A (NPN) MJL1302A (PNP)

TYPICAL CHARACTERISTICS
PNP MJL1302A NPN MJL3281A
50 60
T CURRENT BANDWIDTH PRODUCT (MHz)

VCE = 10 V

T CURRENT BANDWIDTH PRODUCT (MHz)

VCE = 10 V
50
40
5V
5V 40
30
30
20
20

10 TJ = 25C TJ = 25C
10
ftest = 1 MHz ftest = 1 MHz
f,

f,
0 0
0.1 1.0 10 0.1 1.0 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 1. Typical Current Gain Figure 2. Typical Current Gain

Bandwidth Product Bandwidth Product

PNP MJL1302A NPN MJL3281A

1000 1000
VCE = 5.0 V VCE = 5.0 V
hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

TJ = 100C 25C
TJ = 100C 25C

100 100
-25C -25C

10 10
0.05 0.1 1.0 10 100 0.05 0.1 1.0 10 100
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 3. DC Current Gain Figure 4. DC Current Gain

PNP MJL1302A NPN MJL3281A

3.0 2.5

TJ = 25C
2.5 TJ = 25C
SATURATION VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)

IC/IB = 10 2.0
IC/IB = 10
2.0
VBE(sat) 1.5
1.5 VBE(sat)

1.0
1.0

0.5
0.5
VCE(sat) VCE(sat)
0 0
0.1 1.0 10 100 0.1 1.0 10 100
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 5. Typical Saturation Voltages Figure 6. Typical Saturation Voltages

www.onsemi.com
3
 MJL3281A (NPN) MJL1302A (PNP)

TYPICAL CHARACTERISTICS
PNP MJL1302A NPN MJL3281A
10 10
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)

VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)

TJ = 25C
TJ = 25C

VCE = 5 V (DASHED)
VCE = 5 V (DASHED)
1.0 1.0
VCE = 20 V (SOLID) VCE = 20 V (SOLID)

0.1 0.1
0.1 1.0 10 100 0.1 1.0 10 100
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 7. Typical Base−Emitter Voltage Figure 8. Typical Base−Emitter Voltage

PNP MJL1302A NPN MJL3281A

10000 10000
Cib
Cib
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)

1000 Cob 1000

Cob

TJ = 25C TJ = 25C
ftest = 1 MHz ftest = 1 MHz
100 100
0.1 1.0 10 100 0.1 1.0 10 100
VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)

Figure 9. MJL1302A Typical Capacitance Figure 10. MJL3281A Typical Capacitance

100

There are two limitations on the power handling ability of

IC , COLLECTOR CURRENT (AMPS)

10 ms
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC − VCE lim-
10
its of the transistor that must be observed for reliable opera-
50 ms tion; i.e., the transistor must not be subjected to greater dissi-
1 sec pation than the curves indicate.
The data of Figure 11 is based on TJ(pk) = 150C; TC is vari-
1.0
able depending on conditions. At high case temperatures,
250 ms thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second break-
0.1 down.
1.0 10 100 1000
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 11. Active Region Safe Operating Area

www.onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−3BPL (TO−264)
CASE 340G−02
ISSUE J
DATE 17 DEC 2004

SCALE 1:2

Q
0.25 (0.010) M T B M −T−
−B− NOTES:
1. DIMENSIONING AND TOLERANCING PER
C ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
U E
N MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A 28.0 29.0 1.102 1.142
A B 19.3 20.3 0.760 0.800
C 4.7 5.3 0.185 0.209
L D 0.93 1.48 0.037 0.058
R 1 2 3
E 1.9 2.1 0.075 0.083
F 2.2 2.4 0.087 0.102
G 5.45 BSC 0.215 BSC
P H 2.6 3.0 0.102 0.118
K J 0.43 0.78 0.017 0.031
K 17.6 18.8 0.693 0.740
L 11.2 REF 0.411 REF
N 4.35 REF 0.172 REF
P 2.2 2.6 0.087 0.102
W
F 2 PL Q 3.1 3.5 0.122 0.137
R 2.25 REF 0.089 REF
G U 6.3 REF 0.248 REF
J
D 3 PL W 2.8 3.2 0.110 0.125
H
0.25 (0.010) M T B S
GENERIC
MARKING DIAGRAM*
STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:
PIN 1. GATE PIN 1. BASE PIN 1. GATE PIN 1. DRAIN PIN 1. GATE
2. DRAIN 2. COLLECTOR 2. SOURCE 2. SOURCE 2. COLLECTOR
3. SOURCE 3. EMITTER 3. DRAIN 3. GATE 3. EMITTER
XXXXXX
AYYWW

XXXXXX = Specific Device Code

A = Location Code
YY = Year
WW = Work Week

*This information is generic. Please refer to

device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42780B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−3BPL (TO−264) PAGE 1 OF 1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.

© Semiconductor Components Industries, LLC, 2019 www.onsemi.com

 onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS: ONLINE SUPPORT: www.onsemi.com/support
Technical Library: www.onsemi.com/design/resources/technical−documentation For additional information, please contact your local Sales Representative at
onsemi Website: www.onsemi.com www.onsemi.com/support/sales