DELTA PUBLIC SCHOOL

(A CBSE Affiliated SeniorSecondary Co-Educational School)

TVR MAIN ROAD, PANANKATTANGUDI, KOOTHANALLUR, TIRUVARUR DIST.
CBSE AFF.NO.:1930967 Website:www.deltapublicschool.com
GRADE: 12 FOURTH 25% REVISION EXAM - 4 MARKS: 70
SUBJECT: PHYSICS DURATION: 3 Hrs
All questions are compulsory.
The question paper has five sections and 33 questions. All questions are compulsory.
Section-A has 16 questions of 1 mark each; Section-B has 5 questions of 2 marks each; Section-C has 7 questions of 3
marks each; Section-D has 2 case-based questions of 4 marks each; and Section-E has 3 questions of 5 marks each.
There is no overall choice. However, internal choices have been provided in some questions.
A student has to attempt only one of the alternatives in such questions.
Wherever necessary, neat and properly labelled diagrams should be drawn.

SECTION – A 16*1m=16
1. The work function for a metal surface is 4.14 eV. The threshold wavelength for this metal surface is
(A) 4125 A° (B) 2062.5 A° ¿C) 3000 A° (D) 6000 A°
2. A photon of wavelengths 663 nm is incident on a metal surface. The work function of the metal is 1.50 eV.
The maximum kinetic energy of the emitted photo electrons is
(A) 3.0 × 10−20 J (b)4.5 × 10−20 J (c) 6.0 × 10−20 J (D) 9.0 × 10−20 J
3. The energy of a photon of wavelength λ is
λh c hc
a) hcλ b) c) d)
c λ λ
2
4. The energy of an electron in nth orbit of hydrogen atom is En =−13.6/n eV. The negative sign energy indicates that
(A) electron is free to move. (B) electron is bound to the nucleus.
(C) kinetic energy of electron is equal to potential energy of electron. (D) atom is radiating energy.
5. The angular momentum of a hydrogen atom in the excited state is 8.28 /9 πX 10−15 eVs. What should be the minimum
energy of light which can excite the electron form the ground state to this excited state? (h = 4.14 × 10−15 eVs)
(A) 0.85 eV (B) 12.75 eV (C) 13.6 eV (D) 14.45 Ev
6. Consider the following reaction

Which of the given options is correct for the above reaction if U was initially at rest?
(A) Momentum of Th will be less than that of He (B) Kinetic energy of Th will be less than that of He
(C) Momentum of Th will be more than that of He (D) Kinetic energy of Th will be more than that of He
7. ___________ has the mass closest to the mass of positron.
(A) Proton (B) Neutron (C) Electron
8. In an extrinsic semiconductor, the number density of holes is 4 ×1020 m – 3. If the number density of intrinsic
carriers is 1.2 × 1015 m–-3, the number density of electrons in it is
(A) 1.8 ×10 9 m – 3 (B) 2.4 × 1010 m – 3 (C) 3.6 ×10 9 m – 3 (D) 3.2×10 10 m – 3
9. The number of electrons made available for conduction by dopant atoms depends strongly upon
(a) doping level (b) increase in ambient temperature (c) energy gap (d) both (A) and (B)
10. When p-n junction diode is forward biased, then
(a) the depletion region is reduced and barrier height is increased
(b) the depletion region is widened and barrier height is reduced
(c) both the depletion region and barrier height are reduced
(d) both the depletion region and barrier height are increased.
11. When a forward bias is applied to a p-n junction, it
(A) raises the potential barrier. (B) reduces the majority carrier current to zero.
(C) lowers the potential barrier. (D) none of the above
12. In figure, assuming the diodes to be ideal,
(A) D1 is forward biased and D2 is reverse biased and hence current flows from A to B
(B) D2 is forward biased and D1 is reverse biased and hence no current flows from B to A and vice versa.
(C) D1 and D2 are both forward biased and hence current flows from A to B.
(D) D1 and D2 are both reverse biased and hence no current flows from A to B and vice versa.
Assertion & Reason
Direction: (FOR ALL THE ASSERTION & REASON QUESTIONS)
Two statements are given. One labelled Assertion (A) and the other labelled reasoning. Select the correct
answers to their questions from the codes (a), (b), (c) and (d) are given below.
(a) Both A and R are true and R is the correct explanation of A.
(b) Both A and R true but R is not the correct explanation of A.
(c) Ais true but R is false. (d) A is false but R is true (e)Both A and R are false
13. Assertion (A): The number of photoelectrons ejected from a metal increases if the intensity of the light
source is increased for a frequency greater than the threshold frequency,
Reason (R): An increase in the intensity of light increases the energy of each photon
14. Assertion (A): According to Rutherford, atomic model, the path of an electron is parabolic.
Reason (R): Rutherford could not explain the stability of the atom.
15. Assertion (A): Two atoms of different elements having the same mass number but different atomic
numbers are called isobars.
Reason (R): Atomic number is the number of protons present and atomic mass is the total number of protons
and neutrons present in a nucleus.
16. Assertion (A): In insulators, the forbidden gap is very large.
Reason (R): The valence electrons in an atom of an insulator are very tightly bound to the nucleus.

SECTION – B 5*2m=10
17. If the frequency of light incident on the cathode of a photocell is increased, how will following be affected
Justify your answer. (i) Energy of the photo electrons (ii) Photoelectric current
−19
18. The work function (w) of a metal X equals 3.3 X 10 J.
Calculate the number of photons (n), of light of wavelength 26.52 nm whose total energy equals W.
19. (A) What do you mean by binding energy per nucleon? (or)
(B) How the mass density of a nucleus varies with mass number?
20. Why is the energy gap much more in Silicon than in Germanium?
21. (i) Draw the energy band diagrams of (a) n-type and (b) p-type semiconductor at temperature, T > 0 K.

SECTION – C 7*3m=21
22. (A) (i) Draw V-I characteristics of a p-n Junction diode.
(ii) Differentiate between the threshold voltage and the breakdown voltage for a diode.
(iii) Write the property of a junction diode which makes it suitable for rectification of ac voltages. (or)
(B) Explain the formation of potential barrier and depletion region in a p-n junction diode. What is effect of
applying forward bias on the width of depletion region?
23. (i) Distinguish between n-type and p-type semiconductor on the basis of energy band diagram.
(ii) Compare their conductivities at absolute zero temperature and at room temperature.
24. A (i) State two distinguishing features of nuclear force.
(ii) Draw a plot showing the variation of potential energy of a pair of nucleons as a function of their separation.
Mark the regions on the graph where the force is (a) attractive, and (b) repulsive (OR)
238
(B) In a fission event of 92U by fast moving neutrons, no neutrons are emitted and final products, after the beta
decay of the primary fragments, are140 99
58C and 44 Ru . Calculate Q for this process. Neglect the masses of electrons/
positrons emitted during the intermediate steps.
25. State Bohr's quantization condition of angular momentum. Calculate the shortest wavelength of the Brackett
series and state to which part of the electromagnetic spectrum does it belong.
26. State the postulates of Bohr’s model of hydrogen atom and derive the expression for Bohr Radius.
27. (i) Distinguish between nuclear fission and fusion giving an example of each.
(ii) Explain the release of energy in nuclear fission and fusion on the basis of binding energy per nucleon curve.
28. (i) Distinguish between isotopes and isobars.
(ii) Two nuclei have different mass numbers A1 and A2. Are these nuclei necessarily the isotopes of the same
element? Explain.

SECTION – D 2*4m=8
29. Photocell: A photocell is a technological application of the photoelectric effect. It is a device whose
electrical properties are affected by light. It is also sometimes called an electric eye. A photocell consists of a
semi-cylindrical photo-sensitive metal plate C (emitter) and a wire loop A (collector) supported in an evacuated
glass or quartz bulb. It is connected to the external circuit having a high-tension battery B and micro ammeter
(µA) as shown in the Figure. Sometimes, instead of the plate C, a thin layer of photosensitive material is pasted
on the inside of the bulb. A part of the bulb is left clean for the light to enter it. When light of suitable
wavelength falls on the emitter C, photoelectrons are emitted. These
photoelectrons are drawn to the collector A. Photocurrent of the order of a
few microampere can be normally obtained from a photo cell. A photocell
converts a change in intensity of illumination into a change in photocurrent. This
i)Photocell is an application of
A) thermoelectric effect (B) photoelectric effect
(C) photoresistive effect (D) None of the above
(ii) Photosensitive material should be connected to
(A) -ve terminal of the battery (B) + ve terminal of the battery
(C) Any one of (A) or (B) (D) Connected to ground
(iii)Which of the following statement is true ?
(A) The photocell is totally painted black. (B) A part of the photocell is left clean.
(C) The photo cell is completely transparent. (D) A part of the photocell is made black
(iv) A photocell converts a change in _ of incident light into a change in
(A) Intensity, photo-voltage (B) Wavelength, photo-voltage
(C) Frequency, photo-current (D) Intensity, photo-current
30. A semiconductor diode is basically a pn junction with metallic contacts provided at the ends for the
application of an external voltage. It is a two terminal device. When an external voltage is applied across a
semiconductor diode such that p-side is connected to the positive terminal of the battery and n-side to the
negative terminal, it is said to be forward biased. When an external voltage is applied across the diode such
that n-side is positive and p-side is negative, it is said to be reverse biased. An ideal diode is one whose
resistance in forward biasing is zero and the resistance is infinite in reverse biasing. When the diode is forward
biased, it is found that beyond forward voltage called knee voltage, the conductivity is very high. When the
biasing voltage is more than the knee voltage the potential barrier is overcome and the current increases
rapidly with increase in forward voltage. When the diode is reverse biased, the reverse bias voltage produces a
very small current about a few microamperes which almost remains constant with bias. This small current is
reverse saturation current.
(i) In the given figure, a diode D is connected to an external resistance R = 100 W and an emf of 3.5 V. If the
barrier potential developed across the diode is 0.5 V, the current in the circuit will be:
 (A)40 Ma (B) 20 mA (C) 35 mA (D) 30 mA

(ii)

(iii)Based on the V-I characteristics of the diode, we can classify diode as

(A)bilateral device (B) ohmic device (C) non-ohmic device (D) passive element
(iv) Two identical PN junctions can be connected in series by three different methods as shown in the figure.
If the potential difference in the junctions is the same, then the correct connections will be
(A) in the circuits (1) and (2) (B) in the circuits (2) and (3)
(C) in the circuits (1) and (3) (D) only in the circuit (1)

SECTION – E 3*5m=15
31. Diode can be used as both full wave rectifier and half wave rectifier. Explain with circuit diagram? Draw
the output wave form.
32. (a) Using Rutherford model of the atom, derive the expression for the total energy of the electron in
hydrogen atom. What is the significance of total negative energy possessed by the electron? (or)
(b)Using Bohr’s postulates, obtain the expression for the total energy of the electron in the stationery states of
the hydrogen atom.
33. What is nuclear fission? Give one representative equation.
(ii) (a) What is nuclear fusion? Give one representative equation
State the necessary condition for nuclear fusion to occur.