Chapter 27

Semiconductor Electronics:
Materials, Devices and Simple Circuits

Solutions

SECTION - A
Objective Type Questions (One option is correct)
1. Silicon is a semiconductor. If a small amount of As is added to it, then its electrical conductivity
(1) Decreases (2) Increases (3) Remains unchanged (4) Becomes zero
Sol. Answer (2)

2. The mobility of free electron is greater than that of free holes because they
(1) Carry negative charge (2) Are light
(3) Mutually collide less (4) Require low energy to continue their motion
Sol. Answer (4)

3. Carbon, silicon and germanium have four valence electrons each. At room temperature which one of the following
statements is most appropriate?
(1) The number of free conduction electrons is negligibly small in all the three
(2) The number of free electrons for conduction is significant in all the three
(3) The number of free electrons for conduction is significant only in Si and Ge but small in C
(4) The number of free electrons for conduction is significant in C but small in Si and Ge
Sol. Answer (3)

4. Which circuit will not show current in ammeter?

(1) (2) (3) (4)

A A A A
Sol. Answer (1)
5. A p-n photo diode is made of a material with a band gap of 2 eV. The minimum frequency of the radiation
that can be absorbed by the material is nearly
(1) 1 × 1014 Hz (2) 20 × 1014 Hz (3) 10 × 1014Hz (4) 5 × 1014 Hz
Sol. Answer (4)

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Solutions of Assignment Semiconductor Electronics : Materials, Devices and Simple Circuits 167
6. Zener breakdown takes place if
(1) Doped impurity is low (2) Doped impurity is high
(3) Less impurity in N-part (4) Less impurity in p-type
Sol. Answer (2)

7. In the depletion region of an unbiased p-n junction diode there are

(1) Only electrons (2) Only fixed ions
(3) Only holes (4) Both electrons and holes
Sol. Answer (2)

8. Function of a rectifier is
(1) To convert ac into dc (2) To convert dc into ac
(3) Both (1) & (2) (4) None of these
Sol. Answer (1)

9. In a p-n junction solar cell, the value of photo-electromotive force produced by monochromatic light is
proportional to the
(1) Voltage applied at the p-n junction (2) Barrier voltage at the p-n junction
(3) Intensity of light falling on the cell (4) Frequency of light falling on the cell
Sol. Answer (3)

10. Serious drawback of the semiconductor device is that they

(1) Are costly (2) Do not last for long time
(3) Pollute the environment (4) Cannot be used with high voltage
Sol. Answer (4)

11. The reason for current flow in p-n junction in forward bias is
(1) Drifting of charge carriers (2) Diffusion of charge carriers
(3) Minority charge carriers (4) All of these
Sol. Answer (2)

12. In the energy band diagram of a material shown below, the open circles and filled circles denote holes and
electrons respectively. The material is

Eg

(1) A p-type semiconductor (2) An n-type semiconductor

(3) An insulator (4) A metal
Sol. Answer (1)

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168 Semiconductor Electronics : Materials, Devices and Simple Circuits Solutions of Assignment

13. An oscillator is nothing but an amplifier with

(1) No feedback (2) Negative feedback (3) Positive feedback (4) Large gain
Sol. Answer (3)

14. When n-p-n transistor is used as an amplifier

(1) Electrons move from base to collector (2) Holes move from emitter to base
(3) Electrons move from collector to base (4) Holes move from base to emitter
Sol. Answer (1)

15. If l1, l2, l3 are the lengths of the emitter, base and collector of a transistor then
(1) l1 = l2 = l3 (2) l3 < l1 < l2 (3) l3 > l1 > l2 (4) l3 < l2 > l1
Sol. Answer (3)

16. A common emitter amplifier gives an output of 3 V for an input of 0.01 V. If current gain of the transistor is
100 and the input resistance is 1 k, then the collector resistance is
(1) 30 k (2) 3 k (3) 1 k (4) 6 k
Sol. Answer (2)

17. In a common emitter amplifier the phase difference between the input signal voltage and output
voltage is
 
(1) (2) Zero (3) (4) 
2 6
Sol. Answer (4)

18. In a common emitter amplifier the input signal is applied across

(1) Any where (2) Emitter-collector (3) Collector-base (4) Base-emitter
Sol. Answer (4)

19. The concentration of impurities in a transistor is

(1) Largest for base region (2) Largest for emitter region
(3) Least for emitter region (4) Equal for the emitter, base and collector region
Sol. Answer (2)

20. In a transistor the collector current is always less than the emitter current because
(1) Collector side is reverse biased and the emitter side is forward biased
(2) Collector being reverse biased, attracts less electrons
(3) A few electrons are lost in the base and only remaining one’s reach the collector
(4) Collector side is forward biased and emitter side is reverse biased
Sol. Answer (3)

21. The minimum potential difference between the base and emitter required to switch a silicon transistor ‘ON’ is
approximately
(1) 1 V (2) 3 V (3) 5 V (4) 4.2 V
Sol. Answer (1)

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Solutions of Assignment Semiconductor Electronics : Materials, Devices and Simple Circuits 169
22. Which of the following represents NAND gate?

(1) (2) (3) (4)

Sol. Answer (1)

23. The circuit is equivalent to

A y
B

(1) NOR gate (2) OR gate (3) AND gate (4) NAND gate
Sol. Answer (1)

24. A
B
y
C

The output y, when all three inputs are first high and then low, will respectively be
(1) 1, 1 (2) 0, 1 (3) 0, 0 (4) 1, 0
Sol. Answer (2)

25. A silicon specimen is made into a p-type semiconductor by doping; on an average, one indium atom per 5 ×
107 silicon atoms. If the number density of atoms in the silicon specimen is 5 × 1028 atm/m3, then the number
of acceptor atoms in silicon per cubic centimeter will be
(1) 2.5 × 1030 (2) 2.5 × 1035 (3) 1.0 × 1013 (4) 1.0 × 1015
Sol. Answer (4)

26. Consider the junction diode is ideal. The value of current through the resistance of 300  is
–4V –1V
300 
(1) 0.001 A (2) 0.1 A (3) 0.01 A (4) Zero
Sol. Answer (4)

27. Negative feedback

(1) Increases stability (2) Decreases stability
(3) Produces oscillation (4) Stops current in the transistor
Sol. Answer (1)

28. The current obtained from a simple filterless rectifier is

(1) Constant direct current (2) Varying direct current
(3) Half current (4) Eddy current
Sol. Answer (2)

29. The depletion region of p-n junction has a thickness of the order of
(1) 10–12 m (2) 10–6 m (3) 10–3 m (4) 10–2 m
Sol. Answer (2)

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170 Semiconductor Electronics : Materials, Devices and Simple Circuits Solutions of Assignment

30. In a properly biased transistor

(1) Both depletion layers are equally large
(2) Both depletion layers are equally small
(3) Emitter base depletion layer is large but base collector depletion layer is small
(4) Emitter base depletion layer is small but base-collector depletion layer is large
Sol. Answer (4)

31. In an n-p-n transistor, the collector current is 10 mA. If 90% of the electrons emitted reach the collector, then
the emitter current will be
(1) 9 mA (2) 11 mA (3) 1 mA (4) 0.1 mA
Sol. Answer (2)

32. Application of forward bias to a p-n junction

(1) Widens the depletion zone
(2) Increases the number of donors on the n-side
(3) Increases the potential difference across the depletion zone
(4) Increases the electric field in the positive depletion zone
Sol. Answer (2)

33. Intrinsic semiconductor at absolute zero temperature is a

(1) Good conductor (2) Good semiconductor (3) Perfect insulator (4) Perfect conductor
Sol. Answer (3)

34. An n-p-n transistor circuit is arranged as shown in the figure. It is a common

N RL Vout
P
N
Vin

(1) Base amplifier circuit (2) Emitter amplifier circuit (3) Collector amplifier circuit (4) None of these
Sol. Answer (2)

35. Four equal resistors, each of resistance 10 , are connected as shown in the circuit diagram. The equivalent
resistance between A and B is
10  10 

A B

10  10 

(1) 5  (2) 10  (3) 20  (4) 40 

Sol. Answer (2)

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Solutions of Assignment Semiconductor Electronics : Materials, Devices and Simple Circuits 171
36. In a semiconducting material, the mobilities of electrons and holes are e and h respectively. Which of the
following is true?

(1) e > h (2) e < h (3) e = h (4) e < 0, h > 0

Sol. Answer (1)

37. Which of the following logic gates is a universal gate?

(1) OR (2) NOT (3) AND (4) NOR

Sol. Answer (4)

38. A full wave rectifier circuit along with the input and output are shown in the figure. The contribution from the
diode D2 is (are)
V Input

D1

Input Output
D2

V Output

A B C D
t

(1) C (2) A, C (3) B, D (4) A, B, C, D

Sol. Answer (2)

39. In a p-n junction having depletion layer of thickness 10–6 m, the potential difference across it is 0.1 V. The
electric field is

(1) 107 Vm–1 (2) 10–6 Vm–1 (3) 105 Vm–1 (4) 10–5 Vm–1

Sol. Answer (1)

40. What is the voltage gain in a common emitter amplifier, where input resistance is 3  and load resistance is
24  ( = 0.6)?

(1) 8.4 (2) 4.8 (3) 2.4 (4) 480

Sol. Answer (2)

41. Barrier potential of a p-n junction diode does not depend on

(1) Doping density (2) Temperature (3) Forward bias (4) Diode design

Sol. Answer (4)

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172 Semiconductor Electronics : Materials, Devices and Simple Circuits Solutions of Assignment

42. To which logic gate does the truth table given in the figure correspond?
A B Y
0 0 0
1 0 0
0 1 0
1 1 1

(1) OR gate (2) AND gate (3) NAND gate (4) NOR gate
Sol. Answer (2)

43. Which of the following is not equal to 1 in Boolean algebra?

(1) A + 1 (2) AA (3) A·A (4) A·A

Sol. Answer (4)
44. In a p-n junction, the barrier potential offers resistance to
(1) Free electrons in n-side and holes in p-side
(2) Free electrons in p-side and holes in n-side
(3) Only free electrons in n-side

(4) Only holes in p-side

Sol. Answer (1)

45. Which of the following diodes is used in unbiased condition?

(1) Zener diode (2) Photo diode (3) Solar cell (4) LED
Sol. Answer (3)

46. Which of the following materials can be used for making solar cell?

(1) Iron (2) Copper (3) Lead zirconate (4) Gallium arsenide
Sol. Answer (4)

47. In a full wave rectifier circuit operating from 50 Hz mains frequency, the fundamental frequency in the ripple
would be

(1) 50 Hz (2) 100 Hz (3) 25 Hz (4) 70 Hz

Sol. Answer (2)

48. A transistor cannot be used as an

(1) Amplifier (2) Oscillator (3) Modulator (4) Rectifier

Sol. Answer (4)

49. p-n junction is

(1) Ohmic-resistance (2) Non-ohmic resistance (3) Negative resistance (4) Positive resistance
Sol. Answer (2)

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Solutions of Assignment Semiconductor Electronics : Materials, Devices and Simple Circuits 173
50. What is the value of output voltage V0 in the circuit shown in the figure?
2 k

+ 6 k V0
20 V
– 6V

(1) 6 V (2) 14 V (3) 20 V (4) 26 V

Sol. Answer (1)

51. An n-type semi-conductor is

(1) Positively charged (2) Negatively charged
(3) Either positively charged or negatively charged (4) Electrically neutral
Sol. Answer (4)

52. In a common emitter amplifier, the phase difference between input and output voltage is
(1) Zero (2) /4 (3) /2 (4) 
Sol. Answer (4)

53. The zener diode can be used as

(1) An amplifier (2) An oscillator (3) Rectifier (4) Voltage stabilizer
Sol. Answer (4)

54. In order to obtain amplifying action from a transistor, the transistor should be used in
(1) Cut-off state (2) Saturation state (3) Active state (4) None of these
Sol. Answer (3)

55. In the cut-off state of the transistor,

(1) Input circuit is forward biased and output circuit is reverse biased
(2) Input circuit is reverse biased and output circuit is forward biased
(3) Both input as well as output circuits are reverse biased
(4) Both input as well as output circuits are forward biased
Sol. Answer (3)

56. In which of the configurations of a transistor, the power gain is highest?

(1) Common base (2) Common emitter
(3) Common collector (4) Same in all the three
Sol. Answer (2)

57. The emitter region in a PNP-junction transistor is more heavily doped than the base region, so that
(1) The flow across the base region will be only because of electrons
(2) The flow across the base region will be only because of holes
(3) Recombination will be decreased in the base region
(4) Base current will be high
Sol. Answer (3)

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174 Semiconductor Electronics : Materials, Devices and Simple Circuits Solutions of Assignment

58. There is a gate with two inputs A and B, and one output Y. Using the input and output wave forms identify
the gate

1
A 0
1
B 0
1
Y0

(1) NAND (2) NOR (3) EXCLUSIVE-OR (4) AND

Sol. Answer (3)

59. In a P-N junction, for a 0.2 V change in the forward bias voltage, the corresponding change in current is
20 mA. The dynamic resistance of the P-N junction is
(1) 30  (2) 10  (3) 40  (4) 20 
Sol. Answer (2)

60. An n-type semiconductor has donor levels at 500 meV above the valence band, the frequency of light required
to create a hole is nearly
(1) 8 × 1013 Hz (2) 12 × 1013 Hz (3) 22 × 1013 Hz (4) 15 × 1013 Hz
Sol. Answer (2)

61. In a common emitter amplifier, when a signal of 40 mV is added to the input voltage, the base current changes
by 100 A and emitter current changes by 2.1 mA. The trans-conductance is

1 1 1 1
(1)  (2)  (3) 50 –1 (4) 15 –1
20 50

Sol. Answer (1)

62. The output of the given logic gate is

A
B
Y

(1) Y  A B  B (2) Y  A B  B A (3) Y = 1 (4) Y  ( A  B )B

Sol. Answer (3)

63. Two identical capacitors A and B are charged to the same potential V and are connected in two circuits at
t = 0 as shown in the figure. The charges on the capacitors at time t = RC are respectively

A B
+ – + –
C C
R R

(1) VC, VC (2) VC/e, VC (3) VC, VC/e (4) VC/e, VC/e
Sol. Answer (2)
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Solutions of Assignment Semiconductor Electronics : Materials, Devices and Simple Circuits 175
64. The relationship between  and  is given by

1  
(1)  =  (2)   (3)   (4)  
 1  1 

Sol. Answer (3)

65. Two identical P-N junctions, may be connected in series with a battery in three ways as shown in the adjoining
figure. The potential drop across the P-N junctions are equal in

P N N P

First circuit

P N P N

Second circuit

N P N P

Third circuit

(1) First and second circuits (2) Second and third circuits
(3) Third and first circuits (4) All of these
Sol. Answer (2)

66. In a silicon transistor, a change of 7.89 mA in the emitter current produces a change of 7.8 mA in the collector
current. What change in the base current is necessary to produce an equivalent change in the collector current?
(1) 7.8 mA (2) 7.89 mA (3) 0.09 mA (4) Zero
Sol. Answer (3)

67. In a doped semiconductor, the impurity level is 40 meV above the valence band. The semiconductor is
(1) n-type (2) p-type (3) Intrinsic (4) Extrinsic
Sol. Answer (2)

68. In the diagram, the input is across the terminals A and C and the output is across B and D. The output is

D B

(1) Zero (2) Same as input (3) Full wave rectified (4) Half wave rectified
Sol. Answer (3)

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176 Semiconductor Electronics : Materials, Devices and Simple Circuits Solutions of Assignment

69. In the given figure, a transistor is connected in common emitter configuration. If VBE = 1 V and current gain
 = 100, then the voltage across collector-emitter terminals VCE is [VBE – voltage across base-emitter junction]

3
200 k 10 
+
B C – 7V

(1) 2 V (2) 4 V (3) 5 V (4) 3 V

Sol. Answer (2)

70. A transistor is used in common-emitter mode in an amplifier circuit. When a signal of 20 mV is added to the
base-emitter voltage, the base current changes by 40 A and the collector current changes by 2 mA. The load
resistance is 5 k. Then the voltage gain is
(1) 500 (2) 200 (3) 400 (4) 1000
Sol. Answer (1)

71. In the given circuit, calculate the ratio of currents through the battery if (1) key K1 is pressed, K2 open and
then (2) key K2 is pressed, key K1 is opened
10 

20 

K1 + 5– V

– +
K2
10 V
1
(1) (2) 4 (3) 2 (4) 1
2
Sol. Answer (4)

72. In a transistor the current amplification  is '0.9', when connected in common base configuration. Now if the
same transistor is connected in common emitter configurations and the change in output current is 4.5 mA,
then the corresponding change in input current is
(1) 2 mA (2) 0.5 mA (3) 3 mA (4) 0.25 mA
Sol. Answer (2)

73. In the given circuit, calculate the current through resistance R in the figure (R = 12 )

4V
+ – 12 

– + R

6V
1

(1) 0.92 A (2) 0.13 A (3) 0.72 A (4) 0.42 A

Sol. Answer (4)

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Solutions of Assignment Semiconductor Electronics : Materials, Devices and Simple Circuits 177
74. A transistor is connected in common base configuration, the collector supply is 8 V and the voltage drop across
a resistor of 800  in the collector circuit is 0.5 V. If the current gain  is 0.96, then the base current is
(1) 50 × 10–6 A (2) 450 × 10–6 A (3) 80 × 10–6 A (4) 26 × 10–6 A
Sol. Answer (4)

75. In the given circuit, the voltage across the base emitter junction is

VCC = 9 V
3
16  = R1 RL = 10 k

Q B C
2  = R2 E

(1) 2 V (2) 1 V (3) 3 V (4) 4 V

Sol. Answer (2)

76. If the current amplification factor for a transistor connected in common emitter configuration is 100 and input
resistance is 200 , then the power gain is (Assume output resistance is 0.8 k)
(1) 4 × 104 (2) 5 × 103 (3) 7 × 103 (4) 45 × 104
Sol. Answer (1)

77. In doped semiconductor one dopant atom is kept typically for how many silicon atoms ?
(1) 107 (2) 104 (3) 103 (4) 109
Sol. Answer (1)

78. In a p-n junction diode the value of drift current through depletion region
(1) Decreases in forward biasing
(2) Decreases in reverse biasing
(3) Remains unchanged during forward or reverse biasing
(4) Increases during reverse biasing
Sol. Answer (4)

79. In the Boolean algebra A . B equals

(1) A + B (2) AB (3) A – B (4) A . B

Sol. Answer (2)

80. In the adder circuit of two inputs

(1) AND gate is used for carry forward memory (2) XOR gate is used for display
(3) Both (1) & (2) (4) None of these
Sol. Answer (3)

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178 Semiconductor Electronics : Materials, Devices and Simple Circuits Solutions of Assignment

SECTION - B
Linked Comprehension Type Questions
Comprehension
In p-n junction diode, near junction holes combine with electrons, and impurity ions form a barrier potential
which opposes the recombination of electron-hole pairs. Value of barriers potential for Si is 0.7 volt and for
Ge is 0.3 V. Thus charge density at the junction becomes zero and an electric field is produced near junction.
This region is called depletion layer. Thickness of depletion layer is of the order of 10–6 meter. In forward bias
p terminal is connected with the positive terminal of cell and n is connected with negative terminal of cell. As
forward voltage is increased, current increases exponentially.

1. As forward voltage is increased barrier potential in p-n junction diode is

(1) Increased (2) Decreased (3) Remains same (4) Nothing can be said
Sol. Answer (2)

2. Correct graph for variation of charge density with distance from the junction is

   

p p n
n n
n
p p
x x x x
(1) (2) (3) (4)

Sol. Answer (1)

3. For Si diode minimum required forward voltage so that current can flow is
(1) 0.3 V (2) 1.4 V (3) 0.7 V (4) Zero
Sol. Answer (3)

SECTION - C
Assertion-Reason Type Questions
1. STATEMENT-1 : To make p type semiconductor, pentavalent impurity like phosphorus is mixed with Si.
and
STATEMENT-2 : Pentavalent impurity produces free electrons.
Sol. Answer (4)

2. STATEMENT-1 : In forward biasing current starts when minimum voltage of battery becomes equal to knee
voltage.
and
STATEMENT-2 : Upto knee voltage barrier potential of diode prevents the motion of holes and electrons.
Sol. Answer (1)

3. STATEMENT-1 : LED is used in display units because it emits light when current passes through it.
and
STATEMENT-2 : In LED, electron comes from conduction band to valence band when it emits energy.
Sol. Answer (2)

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Solutions of Assignment Semiconductor Electronics : Materials, Devices and Simple Circuits 179
4. STATEMENT-1 : In reverse biased condition a p-n junction diode does not conduct.
and
STATEMENT-2 : In reverse biased condition a diode has zero resistance.
Sol. Answer (3)

5. STATEMENT-1 : A transistor can be used as an amplifier.

and
STATEMENT-2 : A small change in input current can change output on a large scale.
Sol. Answer (1)

  

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