REVISION

ASSIGNMENT MEF
R.A. MODERN AND SEMICONDUCTOR P HY S I C S

ANSWER KEY
Q. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
A. 3 2 1 3 3 4 2 1 1 1 1 3 1 3 3 1 1 3 1 3 2 1 3 1 1 2 2 3 3 2
Q. 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A. 4 1 4 4 1 2 1 3 1 2 2 3 4 2 3 4 3 1 2 1

HINT – SHEET

1. Ans ( 3 ) 4. Ans ( 3 )
(KE)max = h ν – h ν Th In the reaction of fusion,
2
(KE)max = h(4 ν 0) – h ν 0 1H +21 H →42 He + Q
= 3 hν0 Energy of reactants is 4 × 1.15 for 2 deuterons
2. Ans ( 2 ) = 4.60 MeV
Energy of the product = 4 × 7.1 = 28.4 MeV.
32
15 P →32
16 S+ – 1e0 + + Q
∴ Q of reaction = 28.4 – 4.6 = 23.8 MeV
Q is the energy released during this process
Q = [MP 32 − MS 32 ]c2 5. Ans ( 3 )
m0
= [31.97391 – 31.97207]u × c2 ∵ m=
= [1.84 × 10 – 3 u] × 931.5 v2
√
1−
= + 1.7 MeV. c2
m0
or 2m0 =
3. Ans ( 1 ) √
1−
v2
1H
1 +31 H →21 H +21 H c2
v2 c√ 3
The Q-value of the above reaction is or 4 (1 − ) =1 ⇒ v=
c2 2
Q = Δ Mc2
= [1.007825 + 3.016049 – 2 × 2.014102] u × c2
6. Ans ( 4 )
By Einstein's equation
= – 4.33 × 10 – 3 u × c2
E=K+ϕ
1 u = 931 MeV/c2
⇒ K=E– ϕ
∴ Q = – 4.33 × 10 – 3 × 931 MeV
⇒ K = hν – ϕ
= – 4.03 MeV
slope = h = planks constant

Modern,Semi_ HS-1/4
 7. Ans ( 2 ) 14. Ans ( 3 )
hc I
5= −ϕ ......(1) Prad =
λ C
14πr2 = Prad × C4πr2
17 = 10hc − ϕ .......(2)
4λ = 8.5 × 105 W
Etiminating hc then ϕ = 3 eV
λ 15. Ans ( 3 )
8. Ans ( 1 ) Average atomic mass
1 Bq = 1 decay/s and 1 Ci = 3.7 × 1010 decay/s = 75.4 × 34.98 + 24.6 × 36.98
9. Ans ( 1 ) = 35.47 u
100

For critical fission process, multiplication

factor K should be equal to 1.
16. Ans ( 1 )
10. Ans ( 1 )
h
λ=
mv
nh h
mvr = =
2n mv
2πr
λ =
n
n2
r = a0 × for H -atom
1
λ = 2πa0 × n 17. Ans ( 1 )
for 3rd orbit n = 3 (A) is true, (R) is true; (R) is a correct
λ = 6πa0 explanation for (A).
11. Ans ( 1 ) 18. Ans ( 3 )
200 (a)- p,q,r,s; (b)- p,q,r,s; (c)- p,q,r,s; (d)- p,q,r,s.
The energy of each photon= 20
4 × 10
= 5 × 10−19 J
hc
Wavelength λ=
E
( 6.63 × 10−34 ) × (3 × 108 )
= ⇒ λ = 4.0 × 10−7 = 400 nm.
5 × 10−19

12. Ans ( 3 )

19. Ans ( 1 )
(a)- p,q,t; (b)- p,r ; (c)- s, (d)- q,s

13. Ans ( 1 )

HS-2/4 Modern,Semi_
 20. Ans ( 3 ) 29. Ans ( 3 )
m μ = 207me , qμ = qe− , Mnucleus = 1836 me The electron is produced as a result of the decay
Reduced mass of neutrons inside the nucleus.
μ=
mM
M +m
=
207me × 1836 me
207me + 1836me
= 186 me 30. Ans ( 2 )
n2 h2 13.6z 2
∵ r1 = = 0.51 Å ∵ E=−
4π 2 mkze2 n2
−13.6 × 4
(Given in Question) EHe+ =
4
Radius of first orbit of new atom = −13.6 eV
m e r1
r1 ′ =
μ 31. Ans ( 4 )
me
= × 0.51 \AA = 2.56 × 10−13 m EH = −13.6 eV
186me
μ 186 me −13.6 z 2 −13.6 (9)
E1 ′ = E1 = (−13.6 eV ) ELi++ = = = −13.6 eV
m me n2 9
= – 2.5 keV ≈ −2.8 keV 32. Ans ( 1 )
(according to given options) λ∝
1

21. Ans ( 2 ) m
33. Ans ( 4 )
NCERT Reference: XII, Part-II, Page No. 490
Higher frequency of E-field,
22. Ans ( 1 ) ν=
9 × 1015
Hz
NCERT Reference: XII, Part-II, Page No. 489 2π
= hν − ϕ
23. Ans ( 3 ) Kmax

Franck – Hertz experiment is for discrete

9 × 1015 −1
energy levels of atom. = 4.14 × 1015 eV s × s − 2.50 eV
2π
24. Ans ( 1 ) = 5.93 – 2.50 = 3.43 eV
Conceptual 34. Ans ( 4 )
25. Ans ( 1 ) n1 ×
hc
λ1
= 200
Conceptual. hc
n2 × = 200
26. Ans ( 2 ) n1
λ2
λ 300
Velocity at higher point = u sin θ = 1 =
n2 λ2 500
h n1 3
λD = =
mu sin θ n2 5
27. Ans ( 2 ) 35. Ans ( 1 )
2πr = nλ By theory
2 π r = 600 × 10 – 9 = 2 × λ 36. Ans ( 2 )
λ = 300 × 10 – 9 m
hc
∵ λ max = =
ΔEg
37. Ans ( 1 )
28. Ans ( 3 ) n2i (1.5 × 10 )
16 2

E = Δ m × 931 MeV ne = =
nh 4.5 × 1022
= 5 × 10 m9 – 3
E = (c – a – b)

Modern,Semi_ HS-3/4
 38. Ans ( 3 ) 45. Ans ( 3 )
Antimony is pentavalent impurity so Ge pure
crystal will convert into N type extrinsic S.C.
having large number of free e – than holes.
39. Ans ( 1 ) 60
Vab = = 30V
If VP – VN = +ve then diode is F.B. 2
40. Ans ( 2 ) 46. Ans ( 4 )

(6 − 2)volt
Zener and RL are in parallel R=
10 mA
5 R = 400 Ω
∴ I= = 5mA
1K
41. Ans ( 2 ) 47. Ans ( 3 )
The reason of formation of D.L. in PN junction Both diode is in F.B. but due to less potential
is motion (diffusion) of majority carriers. barrier of Ge diode, current will pass only from
Ge diode.
42. Ans ( 3 ) 12 − 0.3
∴I= = 2.34 mA
5 kΩ
48. Ans ( 1 )
PN junction is a unidirectional device. It allows
current flow only in one direction (i.e. p to n)
(2.6 − 0.6)V
∴R=
5 mA
49. Ans ( 2 )
R = 400 Ω For first diagram diode conducts
43. Ans ( 4 ) So q1 = q0 e – t/RC, q0 = CV

λ⩽
12400
Å q1 = VC e – 1 = V C
e
ΔE(in eV ) For second diagram diode does not conduct
12400
λ⩽ Å = 6200 Å So q2 = q0 = VC
2
f⩾
C
=
3 × 108
= 4.8 × 1014 Hz 50. Ans ( 1 )
λ 6200 × 10−10 For Ge(semiconductor) electrical conductivity
14
f ≥ 5 × 10 Hz
decreases with decrease in temperature while
44. Ans ( 2 ) Na(conductor) electrical conductivity increases
12 with decrease in temperature.
I= = 2A
4+2

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