EEE 313

EEE 313
Electronic Circuits I
BIPOLAR JUNCTION TRANSISTOR

(BJT)
INTRODUCTION
• It is a three layer semiconductor device consisting of
either two N-type and one P-type layers of materials or
two P-type and one N-type layers of semiconductor
materials
• Developed in December 23, 1947 in Bell Laboratories
• By John Bardeen, William Shockley, and Walter Brattain
• Basically a reSISTOR that amplifies electrical impulses as
they are TRANsferred from its input to its output
terminals
DESCRIPTION
3 TERMINALS 2 PN JUNCTIONS:
Base C
Emitter-Base Junction
Emitter
B
Collector-Base Junction
E
Collector
• The middle portion which forms two PN junctions between
the emitter and the collector is called the base.
• The base of transistor is thin, as compared to the emitter

and is a lightly doped portion.
• The function of base is to control the flow of charge carrier.
• 1017 dopants/ cm3
• Moderately doped
• The portion on one side of transistor that supplies
charge carriers (i.e electron or holes) to the other two
portions
• Heavily doped
• the portion on the other side of the transistor (i.e. the side
opposite to the emitter) that collects the charge carriers
(i.e. electrons or holes)
• Lightly doped
• The doping level of the collector is in between the heavily
doping of emitter and the light doping of the base.
TYPES
BJT CHARACTERISTICS & PARAMETERS
Figure shows the proper bias
arrangement for npn transistor for
active operation as an amplifier.
Notice that the base-emitter (BE)
junction is forward-biased by VBB and
the base-collector (BC) junction is
reverse-biased by VCC. The dc current
gain of a transistor is the ratio of the
dc collector current (IC) to the dc base
current (IB), and called dc beta (DC). The ratio of the dc collector current (IC)
DC = IC/IB to the dc emitter current (IE) is the dc
alpha. α DC = IC/IE
EXAMPLE 1
Determine βDC and IE for a transistor where IB = 50 μA and IC = 3.65
mA.
SOLUTION 1
I C 3.65mA
 DC    73
IB 50A
IE = IC + IB = 3.65 mA + 50 μA = 3.70 mA
I C 3.65mA
 DC    0.986
I E 3.70mA
BJT CHARACTERISTICS & PARAMETERS
• Analysis of this transistor circuit to predict the dc voltages and currents
requires use of Ohm’s law, Kirchhoff’s voltage law and the beta for the
transistor;
• Application of these laws begins with the base circuit to determine the
amount of base current. Using Kichhoff’s voltage law, subtract the VBE
=0.7 V, and the remaining voltage is dropped across RB .
• Thus, VRB = VBB - VBE.
• Determining the current for the base with this information is a matter of
applying of Ohm’s law. VRB/RB = IB
• The collector current is determined by multiplying the base current by beta.
• Thus, IC= βDC * IB
BJT CHARACTERISTICS &
PARAMETERS
• What we ultimately determine by use of

Kirchhoff’s voltage law for series circuits
is that, in the base circuit, VBB is
distributed across the base-emitter
junction and RB in the base circuit.
• In the collector circuit we determine
that VCC is distributed proportionally
across RC and the transistor(VCE).
BJT CIRCUIT ANALYSIS
There are three key dc voltages and three key dc
currents to be considered. Note that these
measurements are important for troubleshooting.
IB: dc base current

IE: dc emitter current
IC: dc collector current
VBE: dc voltage across base-emitter
junction
VCB: dc voltage across collector-base
junction
VCE: dc voltage from collector to emitter
BJT CIRCUIT ANALYSIS
When the base-emitter junction is forward-biased,
VBE ≅ 0.7 V
VRB = IBRB : by Ohm’s law
IBRB = VBB – VBE : substituting for VRB
IB = (VBB – VBE) / RB : solving for IB
VCE = VCC – VRc : voltage at the collector with respect to the grounded emitter
VRc = ICRC
VCE = VCC – ICRC : voltage at the collector with respect to the emitter.
The voltage across the reverse-biased
collector-base junction
VCB = VCE – VBE where IC = βDCIB
EXAMPLE 2
Determine IB, IC, IE, VBE, VCE, and VCB in the circuit of Figure. The
transistor has a βDC = 150
SOLUTION 2
When the base-emitter junction is forward-biased,
IC = βDCIB
VBE ≅ 0.7 V = (150)(430 μA)
IB = (VBB – VBE) / RB = 64.5 mA
IE = IC + IB
= (5 V – 0.7 V) / 10 kΩ = 430 μA
= 64.5 mA + 430 μA
VCE = VCC – ICRC = 64.9 mA
= 10 V – (64.5 mA)(100 Ω)
= 3.55 V
VCB = VCE – VBE
= 3.55 V – 0.7 V
= 2.85 V
Since the collector is at a higher voltage than
the base, the collector-base junction is reverse-
biased.
COLLECTOR CHARACTERISTIC CURVES
Gives a graphical illustration of
the relationship of collector
current and VCE with specified
amounts of base current. With
greater increases of VCC , VCE
continues to increase until it
reaches breakdown, but the
current remains about the same
in the linear region from 0.7V to
the breakdown voltage.
EXERCISE
Sketch an ideal family of collector curves for the circuit in Figure for IB = 5 μA
to 25 μA in 5 μA increment. Assume βDC = 100 and that VCE does not exceed
breakdown.
SOLUTION
IC = βDC IB
IB IC
5 μA 0.5 mA
10 μA 1.0 mA
15 μA 1.5 mA
20 μA 2.0 mA
25 μA 2.5 mA
BJT MODES OF OPERATION
BJT MODES OF OPERATION
CUTOFF
With no IB , the transistor is in the cutoff
region and just as the name implies there is
practically no current flow in the
collector part of the circuit. With the
transistor in a cutoff state, the full VCC can
be measured across the collector and
emitter(VCE).
Cutoff: Collector leakage current (ICEO)

is extremely small and is usually
neglected. Base-emitter and base-
collector junctions are reverse-biased.
SATURATION
Once VCE reaches its maximum
value, the transistor is said to be in
saturation.
Saturation: As IB increases due to increasing VBB, IC also increases

and VCE decreases due to the increased voltage drop across RC.
When the transistor reaches saturation, IC can increase no further
regardless of further increase in IB. Base-emitter and base-collector
junctions are forward-biased.
DC LOAD LINE
The dc load line graphically
illustrates IC(sat) and cutoff for
a transistor.
Active
region of
the
transistor’s
operation.
DC load line on a family of collector characteristic

curves illustrating the cutoff and saturation conditions.
EXAMPLE 3
Determine whether or not the transistors in Figure is in
saturation. Assume VCE(sat) = 0.2 V.
SOLUTION 3
First, determine IC(sat)
VCC  VCE ( sat )

I C ( sat ) 
RC
10V  0.2 V
  9.8 mA
1.0 k
Now, see if IB is large enough to produce IC(sat).
VBB  VBE 3V  0.7 V 2.3V

IB     0.23 mA Thus, IC greater than
RB 10k 10 k IC(sat). Therefore, the
I C   DC I B  (50)(0.23 mA)  11.5 mA transistor is saturated.
TRANSISTOR CURRENTS AND CONFIGURATIONS
Common Base Configuration
Vi E C Vo
Ie Ic
RE B RC
VEE VCC
Common Base
Configuration
Common Base Configuration
Common Emitter Configuration
 The emitter is common to both

Ic
Ib VCC input (base-emitter) and
V output (collector-emitter).
i  The input is on the base and
Vo
Ie the output is on the collector.
RB
RE
VBB
Beta (β)
 the ratio of collector current to the base
current .
 represents the amplification factor of a
transistor. ( is sometimes referred to as hfe,
a term used in transistor modeling
calculations)
Relationship between amplification factors
α and β
Common Collector Configuration
Ic The input is on the base and

Ib VCC the output is on the emitter.
Vi
Ie Vo
RB
RE
VBB
Common Collector Configuration
COMPARISON OF AMPLIFIER CONFIGURATIONS
Common
Characteristic Common Base Common Emitter
Collector
Power Gain moderate highest moderate
Lowest (less than
Voltage Gain highest moderate
1)
lowest (less
Current Gain moderate highest
than1)
Input Impedance lowest moderate highest
Output
highest moderate lowest
Impedance
Phase Inversion none 180o out of phase none
Application RF amplifier universal isolation

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BIPOLAR JUNCTION TRANSISTOR

• The base of transistor is thin, as compared to the emitter

• The function of base is to control the flow of charge carrier.

• 1017 dopants/ cm3

• What we ultimately determine by use of

IB: dc base current

Cutoff: Collector leakage current (ICEO)

Saturation: As IB increases due to increasing VBB, IC also increases

DC load line on a family of collector characteristic

VCC  VCE ( sat )

VBB  VBE 3V  0.7 V 2.3V

 The emitter is common to both

Ic The input is on the base and

Input Impedance lowest moderate highest

Phase Inversion none 180o out of phase none

Application RF amplifier universal isolation

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