SANGDEST

MICROELECTRONICS MBRF20200CT(CTR)
Technical Data Green Products
Data Sheet N0131, Rev. B
MBRF20200CT(CTR) SCHOTTKY RECTIFIER
Applications:
• Switching power supply
• Converters
• Free-Wheeling diodes
• Reverse battery protection

Features:
• 150 °C T J operation
• Center tap configuration
• Low forward voltage drop
• High purity, high temperature epoxy encapsulation for enhanced MBRF20200CT
mechanical strength and moisture resistance
• High frequency operation
• Guard ring for enhanced ruggedness and long term reliability
• This is a Pb − Free Device
• All SMC parts are traceable to the wafer lot
• Additional testing can be offered upon request MBRF20200CTR

Mechanical Dimensions: In mm
OPTION 1(CJ) OPTION 2(HD)
Dim Min Max Min Max
A 4.35 4.65 4.30 4.70
b 0.50 0.75 0.50 0.75
b1 1.15 1.402 1.20 1.45
b2 1.55 1.802 1.60 1.85
b3 1.55 1.65 1.50 1.75
b4 1.10 1.35 1.10 1.35
C 0.50 0.75 0.55 0.75
D 14.8 15.2 14.80 15.20
E 10.06 10.26 9.96 10.36
e 2.46 2.62 2.55TYP
F 2.85 3.15 2.80 3.20
G 6.50 6.90 6.50 6.90
L 12.70 13.70 12.70 13.70
L1 3.40 3.80 3.40 4.00
L2 2.60 3.00 - -
Q 2.60 2.80 2.50 2.90
Q1 2.50 2.90 2.50 2.90
ØR 3.40 3.60 3.30 3.70

• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
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 SANGDEST
MICROELECTRONICS MBRF20200CT(CTR)
Technical Data Green Products
Data Sheet N0131, Rev. B

OPTION 3 OPTION 4

Dim Min Max Min Max

A 4.53 4.93 4.50 4.90

b 0.71 0.91 0.70 0.90

b1 1.15 1.39 1.33 1.47

C 0.36 0.53 0.45 0.60

D 15.67 16.07 15.67 16.07

E 9.96 10.36 9.96 10.36

e 2.54TYP 2.54 BSC

F 2.34 2.76 2.34 2.74

G 6.50 6.90 6.48 6.88

L 12.37 12.77 12.78 13.18

L1 2.23 2.63 3.03 3.43

Q 2.56 2.96 2.56 2.96

Q1 3.10 3.50 3.10 3.50

ØR 2.98 3.38 3.08 3.28

• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
 SANGDEST
MICROELECTRONICS MBRF20200CT(CTR)
Technical Data Green Products
Data Sheet N0131, Rev. B

OPTION 5 (SR)

ITO-220AB

• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
 SANGDEST
MICROELECTRONICS MBRF20200CT(CTR)
Technical Data Green Products
Data Sheet N0131, Rev. B

Marking Diagram:

Where XXXXX is YYWWL

MBR = Device Type

F = Package Type
20 = Forward Current (20A)
200 = Reverse Voltage (200V)
CT/CTR = Configuration
SSG = SSG
YY = Year
WW = Week
L = Lot Number

MBRF20200CT MBRF20200CTR

Cautions：Molding resin
Epoxy resin UL:94V-0

Ordering Information:

Device Package Shipping

ITO-220AB
MBRF20200CT 50pcs / tube
(Pb-Free)

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.

Maximum Ratings:
Characteristics Symbol Condition Max. Units
Peak Inverse Voltage VRWM - 200 V
50% duty cycle @TC =105°C, 10(Per leg)
Average Forward Current IF(AV) A
rectangular wave form 20(Per device)
Peak Repetitive Forward Rated VR, Square wave,20KHz,
IFRM 20 A
Current(per leg) @TC=90°C
Peak One Cycle Non-
Repetitive Surge Current IFSM 8.3 ms, half Sine pulse 150 A
(per leg)

• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
 SANGDEST
MICROELECTRONICS MBRF20200CT(CTR)
Technical Data Green Products
Data Sheet N0131, Rev. B

Electrical Characteristics:
Characteristics Symbol Condition Max. Units
Forward Voltage Drop VF1 @ 10A, Pulse, TJ = 25 °C 0.95 V
(per leg) * VF2 @ 10A, Pulse, TJ = 125 °C 0.85 V
Reverse Current at DC @VR = rated VR
IR1 1.0 mA
condition (per leg) TJ = 25 °C
Reverse Current (per leg) * @VR = rated VR
IR2 50 mA
TJ = 125 °C
Junction Capacitance @VR = 5V, TC = 25 °C
CT 300 pF
(per leg) fSIG = 1MHz
Series Inductance(per leg) Measured lead to lead 5 mm from
LS 8.0 nH
package body
Voltage Rate of Change dv/dt - 10,000 V/µs
* Pulse Width < 300µs, Duty Cycle <2%

Thermal-Mechanical Specifications:
Characteristics Symbol Condition Specification Units
Junction Temperature Range TJ - -55 to +150 °C
Storage Temperature Range Tstg - -55 to +150 °C
Maximum Thermal
Resistance Junction to Case RθJC DC operation 4.5 °C/W
(per leg)
Approximate Weight wt - 2 g
Case Style ITO-220AB

• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
 SANGDEST
MICROELECTRONICS MBRF20200CT(CTR)
Technical Data Green Products
Data Sheet N0131, Rev. B

1000 1000

Instantaneous Reverse Current ( μ A)

100
TJ=125℃
Junction Capacitance (PF)

TJ=25℃ 10
100

1
TJ=25℃

0.1

10
0.01
0 5 10 15 20 25 30 35 40
10 20 30 40 50 60 70 80 90 100
Reverse Voltage (V)
Percent of Rated Peak Reverse Voltage (%)

Fig.1-Typical Junction Capacitance Fig.2-Typical Reverse Characteristics

Instantaneous Forward Current (A)

100

TJ=125℃
10
TJ=25℃

1
0.5 0.6 0.7 0.8 0.9 1 1.1
Forward Voltage Drop (V)

Fig.3-Typical Instantaneous Forward Voltage Characteristics

• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
 SANGDEST
MICROELECTRONICS MBRF20200CT(CTR)
Technical Data Green Products
Data Sheet N0131, Rev. B

DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve
product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
sales department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or
by means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
SMC - Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..

• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •