The hole cwveni divsity

diode ç gtven by t below

eapnton.
nie?
n
Dedye tle above eqaten tantng
derevatoh
ade in t e
app TORi matto n

Souton: of equaton.
Slep 4: undenstanlte,
nie

at
deusty
hole cuwent
Jp (x) positon diade
p-n
of a
alemuutay change
- á the
diffw'on coefeient
- ç ta for hole

nie Conbeutbratton undet

equitibTum

the elhctron and

ae Centyaftow in
hole coDH
diod ssespecttvaly
 2. Recogn?e dteing -fove for diffeulon
on wemicendutio phytfes, s dilulo

Con tondyaton.
to Tick's -finst
Accordng

hos can be erpaiyed ap

for

te hole Conceraton
p
whece P u

electro n
Btep 3: hole Con centraton to
Relale n-type motertal
Conceutratton fn
semiconducto, tao
an n-type electrou,and te
ae
majority Cven
hole
mfnoitg electon and Goe
Ju produd af
ttenmal eqlibrium ü
Con ceutrattons at 2
nie
Constuut, given by np
n- side af a diode
Jhes, for tu
2

nie
Pn=
nn
 4
Pn.

d pn +/)
nie (
Vsingto chatn rute agan.

2 dnn.
d

dp - nje don,
n'n da
tae epsuM}on
bask fnto
Susstitute
Mep 5:
for Jp
expu tonfor
fn tfe
Raplau
-9 Dp Dn

2
nie don
2
 nosmalized
Conontat on.
mor
Jo erpsuu te eqpeatton
faa ttes normabd
genal fom, Cous
Conceutvatton hn Pn .
nie
Bub 3

ne
Dfeutatng tia epeesten

I1n;eexpMion for
di

p can be
Steweven, te normali2ed fory
sewrien usfng ti's
show te dapendne
for clarity and to
tlis hosmalizef
On
goadieut
Concentrattoa
2

nie da
 Recogr

-for hele fraaitart

ntrkawism
ignitirout
the geunaoon/surtonint.
electfe fteid1 ard
te
to
L&emieonductoo
tenpenakt
doped ond
be ualfermy
to wguted
holde tundey
Jue procut hp - n,e
hp asumut
u
wbih even
bnfun, Undley
ttemal eaili
approzimately valid
to be eauilibrfum Condit'ow
non - tu pn juneton,
ponsideu an MOS devto wtf Donm tkick gate
eide and unform p. type subted dopthg
Cm3 wo functon u tt at af nsi.
a) whal tho flatband vetage? what u
ttorg
tfe tares hold ve tage for
fnvesfon.?
(-V Cunve.
freqenJ
b) Sketr, teu JgA ffattand
wkere tee vo toge and
Label
ttneahotd votage

ooutton:
latband volfage CVFB)
) Ealeulatb the
by te forml,
Jhe ftatboard votoge gven
6+eit

whee
metal emiconducos cuoot functen
fms
ffred chonge to dhe exide
ntntacs trop change
Cax Oide Capoctana
 ms VB fun
<-l"ley
-1-ley = ms
4ley- ms
5eV
Concentvtoy
dopfng
poosimakaly
Erc2jo of fora
3 IT.
semiecnductor
functon oot -
peS of
pooumalay metal
funton wort - whee
poly
si n t of
tonddter ms
çmabod be Can gor
p-tyP gati -si poly n+
ht an
t, p-tgpe On
aaon
Pms -
Asumig
t
a) lafs th tkihald vaiHnge (u) fo haeg
tong
frvesien
Prveneer

givern by

Caz

whes

- Puk Chag

for a p-type wemicondußor ü given

Pr

ARming HGom denmp erakuo T=300}

-3
lo
NA
-3
n L5XI0 cm

lo (7
= 0-026V In
f5 Xjo/
Jhees
2X|7x e.85 XIo

744Xjo
554x (occm

744 X|0 C/em

&B
aee
Capautonce pr uit
Je oxido
tar

whie = 3-9xg.e5Xlo -l4 F/om

Cpemittvity f-sioa)

=2XloC
2onm

2
F/on
 futtet fnceae
valueCapacitance
voltege teu
then
mindm this at ttat emaivs Arng
Jhe eglon. fnvension
eaching
a
fn
the mPnimun voltage tie
and VFB exQeds
Ten egton, acumulatHon
deceae mazimum
Capacitan& mazimum tte hecon
the fnvalu emafrs appvoacher
VEVeBg
slatvely
at votaga, ugotve
the oeases
as fn
s,
Copautano dow stas
at
volue
af feqtny high
y Jhe
cve C-V
Vs
718V+ xo. +2-·|V
4.33v Jhus
1o/
(m" I.72x
4..33V
/em XI6 44 7
 pri valug
Cmar
Jh martmum Copatang ntu tn te,
atcumlaton gfon and & eaua to Car

n tf
Jhe mfntrum capacitong occuru
trong fnvenston tegton and
cautty Jowa. typlcally u a
signift
-foctoo hichees,
doptng and ozice
ough estimato Can be glvenby
A
Caz
Cmtn
2XI|.X2X0TI&y
|.72X10F/em?

Cmin I.72 x 10'Fem 2

Cmin F 137 lo F/em2

 Kakien tu

emle tmnak,
and
-tte celr her
gtver by
-4p)
Is +I, (t
VeE
rut Celleeio y
and ttat fos open
VeE I =o)= k+

Sowton
hren: estStancas e e
ctos etes
kmitten and Cole

cwet Feo and lcBÔ

Jhe at ation
contidned negligible:
ae
forwad and
aa tha
severse cuteut goins
cotle tos
tle bae
(wents, upettvey
 termna
(olector- enik
for Ver ú no providd
Jh expMton typlcally involveq
qutton, but H

trautstos
modifiet by te,
t
Cwmeut gatns dF and dR
se and
Jncudhng across +t, colachor
+s
Jhe vottag doop colsctor due to
tt,
re dueto ta
tesistor
to emtte
aCvoss
Ju voltage drop
esistoo e
dus to

VeE
to eapre
Eombing
Jhe lctal voltag à t t sum
temnals
e
Colecto - emitt trqwrto voltagaVée
ic
tte Intrins acooss Ye and Ye.
and ti votage drops
 Auumtog dntved foom e,
((AuumtnÝ

I +1,(t-de)

VeE kT In , +1,-(t-ak)

Case oben
Consilentng Copen iruit collecto)
fe =o
rto tlo, eprion
tte

trelg
 dNattes
t enaally
ly arnd