A Stray-Field-Immune Magnetic Displacement Sensor
A Stray-Field-Immune Magnetic Displacement Sensor
A Stray-Field-Immune Magnetic Displacement Sensor
fully edited. Content may change prior to final publication. Citation information: DOI 10.1109/JSEN.2020.2998289, IEEE Sensors
Journal
IEEE SENSORS JOURNAL, VOL. XX, NO. XX, XXXX 2020 – REV5.1.0 1
Abstract— We present a new Hall sensor design for the accurate and robust measurement of linear displacement. Implemented
in CMOS, the sensor is based on a novel gradient measurement concept combining Hall elements with integrated magnetic
concentrators. In typical applications with practical Ferrite magnets, the peak output voltage of the Hall transducers is
only around 1.7 mV at the maximum operating temperature of 160℃, and thus requires high-performance low-offset readout
electronics. Over its 15-mm linear displacement range, the sensor’s total error is 1% including manufacturing tolerances, trimming
accuracy, temperature, aging effects, and practical magnet constraints. In addition, the sensor is immune to magnetic stray
fields up to 5 mT, complying with the most stringent automotive norm.
Index Terms— Automotive electronics, Hall effect, Magnetic sensors
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Fig. 1. Magnetic concept. (a) Curvilinear motion of a two-pole magnet along an arc over the sensor. (b) Magnetic field components as
function of the displacement. (c) Gradient components of interest. (d) Resulting sensor transfer curve from the mechanical displacement to
the sensed electrical angle.
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This article has been accepted for publication in a future issue of this journal, but has not been fully edited. Content may change prior to final publication. Citation information: DOI 10.1109/JSEN.2020.2998289, IEEE Sensors
Journal
AUTHOR et al.: PREPARATION OF PAPERS FOR IEEE TRANSACTIONS AND JOURNALS (FEBRUARY 2020) 3
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IV. I MPLEMENTATION
V. R ESULTS
reference current is generated by a reference bias voltage A. Drift of key parameters
imposed across a reference HE. This reference current
is then mirrored into the active sensing HEs, possibly About 100 production samples were subjected to
with digital fine tuning. The variability associated with AECQ-100 qualification tests to emulate the lifetime mis-
the resistance spread is then mitigated. Alternatively, the sion profile. The measured drift of the two key parameters
switch S0 when open, disables the current mirrors and is plotted in Fig. 8. The offset software correction, which
instead transistors M0 ...M3 operate as closed switches, was factory calibrated, remains effective even at the end
applying the maximum voltage to the HEs. of lifetime. The standard deviation of the residual offset
The Hall voltages are converted to currents by matched after embedded software correction at 160 ◦C was below
transconductance amplifier stages Gk , and summed in the 5 µV (by contrast: 20 µV without software correction). To
current domain. Note that the mismatch is dominated by characterize the sensitivity mismatches δSk , and capture
the HEs and not the amplifiers Gk . Consequently, dynamic how much common-mode leaks into the signal, we define
element matching techniques to swap the Gk stages would a common mode leakage ratio CMLR.
only provide a marginal improvement. As alluded before, ∑
some level of residual mismatch is naturally to be expected ∑k δSk ak
CMLR = . (2)
given that the sensitive HEs have to be spaced apart to k Sk
sense field difference. Over the relevant scale, chip bending
[18] and stress gradient contribute to residual mismatches. It can be viewed as the inverse of the traditional common-
mode rejection ration. Over the whole sample population
(N = 96) the drift of CMLR remained < 1%.
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TABLE I
E RROR BUDGET FOR THE TOTAL STATIC ERROR
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This article has been accepted for publication in a future issue of this journal, but has not been fully edited. Content may change prior to final publication. Citation information: DOI 10.1109/JSEN.2020.2998289, IEEE Sensors
Journal
6 IEEE SENSORS JOURNAL, VOL. XX, NO. XX, XXXX 2020 – REV5.1.0
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