Printed Page: 1 of 2

Subject Code: KEC402

0Roll No: 0 0 0 0 0 0 0 0 0 0 0 0 0

BTECH
(SEM IV) THEORY EXAMINATION 2021-22
ANALOG CIRCUITS

Time: 3 Hours Total Marks: 100

Note: Attempt all Sections. If you require any missing data, then choose suitably.
SECTION A
1. Attempt all questions in brief. 2x10 = 20
Qno Questions CO
(a) Define stability factor for a biasing scheme. 1
(b) Draw the high frequency model of BJT. 1
(c) Define the efficiency of power amplifiers. 2
(d) If open loop gain of an amplifier is 1000 and feedback factor of the system is 2
.01, calculate the closed loop gain for negative feedback.
(e) Define a stable and monostable multivibrator. 3
(f) Explain the Barkhausen’s Criterion for oscillators. 3
(g) The output impedance of a current mirror should be infinite, justify the 4
statement.
(h) If differential mode gain of a differential amplifier is 1000 and common mode 4
gain is 10, calculate the CMRR in decibel for it.
(i) Explain the concept of virtual short in operational amplifier. 5
(j) List the properties of an ideal operational amplifier. 5
90

2
SECTION B

13
2. Attempt any three of the following: 10x3 = 30
_2

Qno Questions CO

2.
P2

Determine the values of 𝑹𝑫 and 𝑹𝑺 so that the following transistor operates 1

24
(a)
at 𝑰𝑫 𝟎. 𝟒 𝒎𝑨 and 𝑽𝑫 𝟎. 𝟓 𝑽. The NMOS transistor has 𝑽𝒕
2E

5.
𝝁𝑨
𝟎. 𝟕 𝑽, 𝝁𝒏 𝑪𝒐𝒙 𝟏𝟎𝟎 𝟐 , 𝑳 𝟏 𝝁𝒎 and 𝑾 𝟑𝟐 𝝁𝒎.
𝑽
.5
P2

17
Q

|1
2 7
1:
:3
13
2
02

(b) Discuss the advantages of negative feedback in detail with explanation. 2

(c) Derive the frequency of oscillation and condition of gain for sustained 3
-2

oscillations for Wein Bridge oscillator.

08

(d) Explain current steering and properties of a current mirror. Also derive the 4
relation between output current and reference current in current mirror.
0-

(e) Derive the transfer functions and cut off frequency for the followings: 5
|1

(i) Low pass active filter, (ii) High pass active filter
SECTION C
3. Attempt any one part of the following: 10x1 = 10
Qno Questions CO
(a) Derive the expressions for input impedance, output impedance, open circuit 1
voltage gain, overall voltage gain and short circuit current gain after
completing the AC analysis of common emitter amplifier with emitter
resistance.

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Subject Code: KEC402
0Roll No: 0 0 0 0 0 0 0 0 0 0 0 0 0

BTECH
(SEM IV) THEORY EXAMINATION 2021-22
ANALOG CIRCUITS

(b) For the following circuit determine 𝒓𝒆 , input impedance 𝒁𝒊 , output

impedance 𝒁𝟎 , voltage gain 𝑨𝒗 , current gain 𝑨𝒊 . Neglect 𝒓𝟎 in all
calculations.

4. Attempt any one part of the following: 10x1 = 10

Qno Questions CO
(a) Explain the various feedback topologies, with their circuit models and 2
90

2
properties.

13
_2

(b) Discuss the working of class B power amplifiers with its efficiency and 2

2.
nonlinearity. Also discuss the remedy of nonlinear distortion associated with
P2

24
class B power amplifier.
2E

5.
5. Attempt any one part of the following: 10x1 = 10
.5
P2

Qno Questions CO
17
(a) Explain the operation of astable multivibrator with circuit and output 3
Q

|1

waveforms. Also design an astable multivibrator which can generate a square

wave of 10 KHz frequency.
7

(b) Explain the working of a tank circuit. Also derive the frequency of oscillation 3
2

and condition of gain to get sustained oscillations for Colpitts oscillator.

1:
:3

6. Attempt any one part of the following: 10x1 = 10

13

Qno Questions CO
(a) Derive the mathematical expressions for common mode gain, differential 4
2

mode gain, input impedance and CMRR for differential amplifier.

02

(b) Explain the transfer characteristics of differential amplifier. Also derive the 4
-2

necessary mathematical expression required for it.

08

7. Attempt any one part of the following: 10x1 = 10

0-

Qno Questions CO
|1

(a) Design a circuit using a single operational amplifier for the following 5
mathematical operations: (𝑽𝟏 and 𝑽𝟐 are the available inputs)
i. 𝑽𝟎 𝟒 𝑽𝟏 𝟑𝑽𝟐
ii. 𝑽𝟎 𝟐 𝑽𝟏 𝟓𝑽𝟐

(b) State the advantage of Super diode. Explain the operation of precision full 5
wave rectifier with proper circuit and output waveform.

QP22EP2_290 | 10-08-2022 13:31:27 | 117.55.242.132

 Printed Pages: 02 Sub Code: NEC409A

Paper Id: 131276 Roll No.

B.TECH.
(SEM IV) THEORY EXAMINATION 2018-19
ANALOG & DIGITAL ELECTRONICS

Time: 3 Hours Total Marks: 100

Note: Attempt all Sections. If require any missing data; then choose suitably.

SECTION A
1. Attempt all questions in brief. 2 x 10 = 20
a) Define delay time, storage time, rise time and fall time with respect to transistor?
b) If a LED is forward biased for a supply of 10V with a series resistance of 680Ω,
calculate the LED current?
c) What is negative feedback? Write the advantage of negative feedback?
d) What do you mean by voltage amplifier and current amplifier? Give their equivalent
circuit?
e) A crystal has L=0.1H, C=0.01pf, R=10KΩ and CM=1 pf find (i) Series resonance
frequency (ii) Q factor?
f) In a Hartley oscillator L1=20µH, L2=2mH and C is variable. Find the range of C if
frequency is to be varied from 1Mhz to 2.5Mhz neglect mutual inductance?
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g) What is multiplexer? Draw the logic diagram of 8:1line multiplexer?

h) Draw a four stage ring counter and explain its operation?
i) Explain the function of pins of IC 555 timer?
j) What voltage options are available in 78xx and 79xx voltage regulators?

SECTION B
2. Attempt any three of the following: 10x3=30
a) What are the voltage regulators? Discuss the working of shunt and series op-amp based
voltage regulators. Also describe the switching regulators.
b) What is Barkhausen criterion for the feedback oscillator? Draw a neat diagram of a
phase-shift oscillator using BJT? Derive an expression for its frequency of oscillation?
c) Calculate the voltage gain, input and output resistances of a voltage series feedback
1
amplifier having AV = 300, Ri =1.5 kΩ, Ro = 50 kΩ and B = .
15
d) Sketch the circuit diagram for universal shift register and explain its working?
e) How the construction of the schottky barrier diode is different from conventional
semiconductor diode significantly and describe it mode of operation?

SECTION C
3. Attempt any one part of the following: 10X1=10
a) Discuss how the variable capacitance is achieved in Varactor diode? Determine the
transition capacitance of a diffused junction Varactor diode at a reverse bias voltage of
4.2v If (t0) =80pf and junction potential of 0.7v also calculate constant k for diode?
b) Why photodiode is used in reverse bias conditions? Give any two applications of it.

4. Attempt any one part of the following: 10X1=10

a) List five characteristic of an amplifier which are modified by negative feedback and
describe the properties of series-shunt and shunt-shunt feedback amplifier?
b) Draw the high frequency equivalent circuit for the typical RC coupled common emitter
amplifier?
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 Printed Pages: 02 Sub Code: NEC409A

5. Attempt any one part of the following: 10X1=10

a) Discuss how does the circuit of a clap oscillator different from that of a calpitt
oscillator? Explain the properties of quartz crystal which are responsible for its use in
an oscillator?
b) Sketch the circuit of a Wien bridge oscillator and deriver the expression for frequency
of oscillation.
6. Attempt any one part of the following: 10X1=10
a) Explain the working of J-K flip-flop and discuss race around condition of J-K flip-flop.
Show how this condition can be removed.
b) Differentiate between synchronous and asynchronous counter give the logic diagram of
a BCD counter.

7. Attempt any one part of the following: 10X1=10

a) Give the functional block diagram of timer IC 555 and explain how it can be used to
obtain a Monostable Multivibrator?
b) Distinguish between A/D and D/A converters. Explain the operation of any one of
them?
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Page 2 of 2
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Printed Pages: 02 Sub Code: NEC402

Paper Id: 131422 Roll No.

B TECH
(SEM. IV) THEORY EXAMINATION 2017-18
ELECTRONIC CIRCUITS
Time: 3 Hours Total Marks: 100
Note: 1. Attempt all Sections.
2. Assume any missing data.

SECTION A

1. Attempt all questions in brief. 2 x10 = 20

a. A differential amplifier has inputs V1 = 10mV and V2 = 9mV. It has a differential
mode gain of 60dB and a CMMR of 80dB. Find the percentage error in the
output voltage and the error voltage.
b. What do you mean by voltage follower circuit? Explain in brief.
c. How MOSFET works as a switch and amplifier.
d. Explain the difference between DMOSFET & EMOSFET.
e. A BJT having β = 100 is biased at a dc collector current of 1 mA. Find the value of gm
and re.
f. Find out the relationship between α, β and γ.
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g. Draw the current mirror circuit and write its output current equation.
h. What are the advantages of using an active load in differential amplifier circuit?
i. Explain the Barkhausen criterion for oscillator.
j. What are the advantages and disadvantages of negative feedback.

SECTION B

2. Attempt any three of the following: 10 x 3 = 30

a. What are the characteristics of the ideal Op-Amp? Explain the concept of virtual
ground. Design a noninverting amplifier with a gain of 2 at the maximum output
voltage of 10V the current in the voltage driver is to be 10 µA.
b. A MOSFET is to operate at ID = 0.1 mA and is to have gm=1 mA/V. If K’n= 50µA/V2.
Find the required W/L ratio and the overdrive voltage.
c. Write the steps through which small signal equivalent circuit model can be used in the
analysis of transistor amplifier.
d. Design and explain the working of a differential amplifier using active load circuit in
detail.
e. Explain the working of a Phase Shift oscillator. Derive an expression for the
frequency of oscillations. What are the merits and demerits of such oscillator?
SECTION C
3. Attempt any one parts of the following: 10 x 1 = 10
a. (i) Draw the schematic diagram of an instrumentation using op amp and explain its
working.
om

(ii) What do you mean by Integrator? Derive the expression for output voltage.
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b. (i) For the circuit shown in figure-1, obtain the transfer function.
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C/2 C/2
N

R/2
R a R
Vin –
b
V0
C
+

Figure 1

(ii) Derive the formula for negative feedback amplifier gain in terms of Af, A & β
4. Attempt any one parts of the following: 10 x 1 = 10
a) Draw and explain depletion type N-MOSFET with its characteristics
b) Draw the circuit diagram of biasing the MOSFET using a constant-current source and
calculate the expression for I in terms of IREF.
5. Attempt any one parts of the following: 10 x 1 = 10
a) Find the collector current and collector-emitter voltage for the circuit shown in figure-
2.
VCC = 9V
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RC 1 K
R1 200 K
hie = 2 K, hfe = 100 = 
hoe = 0, hre = 0
VT

R2 100 K RC 1 K

Figure 2

b) Draw the circuit diagram of single stage CE amplifier, implement hybrid-π model for
it and calculate expressions for gain, input/output impedance, ie, gm and ib.
6. Attempt any one parts of the following: 10 x 1 = 10
a) Find the Q-point, Vc and I B for the differential amplifier shown in Figure-3.
+VCC = 15V

RC = 65k F = 100 RC = 65k

Vc1 Vc2
IB VOD
– IB
+
Q1 Q2

V1 + V2 +
– –

IE IE
REE = 65k

–VEE = – 15V

Figure 3
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b) Do the small signal analysis of MOS differential pair to determine differential and
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common mode gain.

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7. Attempt any one parts of the following: 10 x 1 = 10

a) Distinguish current feedback and voltage feedback with appropriate circuit /block
diagram.
b) (i) Draw the circuit diagram of a Wien-bridge oscillator and derive an expression for
the frequency of oscillations.
(ii) In colpitts oscillator using FET, the frequency of oscillations is observed to be
2.5MHz oscillator uses: L=10µH, C1=.02µf. Find (i) value of C2 (ii) If L is doubled,
the new value of freq. of oscillations.
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Printed Pages : 2 Roll No. NEC402

B. TECH.
THEORY EXAMINATION (SEM–IV) 2016-17
ELECTRONIC CIRCUITS
Time : 3 Hours Max. Marks : 100
Note : Be precise in your answer. In case of numerical problem assume data wherever not provided.

SECTION – A
1. Attempt all of the following questions: 10 x 2 = 20
5
(a) The input signal vi to an op-amp is vi = 0.03 sin 1.5x 10 t. What can be the maximum
gain of an op-amp with slew rate of 0.4 volts/µs.
(b) Draw the circuit diagram of an integrator and find its output.
(c) What do you mean by slew rate and CMRR of an op-amp.
(d) Draw Hybrid –π model and T-model equivalent of NPN transistor.
(e) Explain Bakhausen criterion.
(f) What are the conditions for operation in triode and saturation region of NMOS and
PMOS transistors?
(g) An amplifier has a mid-band gain of 125 and bandwidth of 250 KHz. If 4% negative
feedback is introduced, find the new bandwidth and gain, also find the feedback ratio
when the bandwidth is restricted to 1MHz.
(h) Draw the circuit of colpitts oscillator and also write its frequency and condition of
maintaining oscillations.
(i) What is the principle of crystal oscillator?
(j) What are the internal capacitances of BJT?

SECTION – B
2. Attempt any five of the following questions: 5 x 10 = 50
(a) Explain inverting amplifier and also derive an expression for the closed loop gain under
the assumption that the open loop gain is finite.
(b) Do the analysis of series-series feedback amplifier to derive gain, input resistance and
output resistance.
(c) Draw the circuit of an RC phase shift oscillator using op-amp and derive frequency and
condition of oscillation for RC phase shift oscillator.
(d) (i) Explain Hartley oscillator.
(ii) Differentiate between DMOSFET and EMOSFET.
(e) Do the analysis bias dc biasing circuit of the NPN transistor to derive Q point and of
self stability factor.
(f) DO the small signal analysis of MOS differential pair to determine differential and
common mode gain.
(g) (i) An enhancement type NMOS transistor with Vt =0.7 V has its source terminal
grounded and a 1.5 V applied to the gate. In what region does the device operate
for a) VD = 0.5 v b) VD = 0.9 v c) VD = 3 v.
(ii) Explain the construction and working of N type enhancement MOSFET.
(h) (i) Draw input and output characteristics of common emitter amplifier.
(ii) State the properties of an ideal op-amp.
 SECTION – C
Attempt any two parts of the following questions: 2 x 15 = 30
3 Do the small signal analysis of common emitter amplifier with emitter resistance do
derive input resistance, voltage gain (from base to collector), overall voltage gain
(source to load), open circuit voltage gain and output resistance.
4 Explain the effect of finite loop gain and bandwidth on circuit performance. Also define
input offset voltage and input offset current.
5 (i) Explain all four feedback topologies with their block diagram.
(ii) Explain the operation of LC tank circuit.
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Printed Pages: 4 NEC4O2

(Foltowing Paper ID and RolI No. to be filled in your
Answer Books)

B.TECH.

Theory Examination (Semester-Iy) 20I5-l 6

ELECTROMC CIRCUITS

Time.' 3 Hours Max Marks: 100

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Sectioil-A

Ql. Attempt all parts. AII parts carry equal marks"

(10x2=20)

(a) What do you mean by voltage follorver circuit ? explain

in brief.

(b) Why Op Arnp is rarely rsed in open loop configrmation?

(c) What is Barkhausen criteria for sinusoidal oscillations

(d) Draw the curent mimor circuit and write its output cur-
rent equation.

(e) State the properties of negative feedback.

(0 What are the advantages of using an active load in

ditrentiat amplifier circuit?

G) What are the types of feedback ?

t29L 17 27 5
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 (h) Draw the small signal n Model of BJT.
T
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(i) How does the slew rate effects Finite or Full power
Band Width of OpAmp ?

(,) An enhancementtpeNMos tarsistorwith vt: a.Tv

has its source terminal grounded and a 1.5v dc applied
to the gate. In v/hat region does the device operate for
VD = 0.9V.

Sectioil-B

Q2. Attempt any live questions from this section. (l0x5=50)

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(a) Discuss the effect of finite loop gain on the performance

of non-inverting OP-AlvIp.

(b) A MOSFET is to operate at Ir:. lmA and is to have

gr=l mAA/. If Kn:SOHAAP. Find the required rMI"
ratio and the overdrive voltage,

(c) Drawthe high frequencymodel ofMOSFET and drive

an expression of fH.

(d) BJT transistor amplifier stage has Re:Rc=l.ske,

Rs :6000f), RL =2kf,) and transistor paftmeter as
9=100 and rn:lkQ. Determine the value of cs t, ccz
and Cs needed to obtain fr:s0l[z and also draw the
sirutdt.

(e) Explain the operation of BJT as a switch and as an

ampltfia.

t291/727 s

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(0 Explain the Nonideal characteristics of MOS differ- -

ential pair.

G) Draw a circuit diagram of Wein bridge oscillator and

drive an expression of frequency of oscillation.
Calculate the firequenry of oscillation for of
Sven values
Rr:&:200I(Cl, Cr= Czl}qpF.
(h) Design the circuit shown in fig.l so that fransistor oper-
:
ates at Ip 0.4mA and VD: +0.5V. The NMOS tran-
sistor has V,:0.TV. F&,Cox = l00pAnf ,L:
lpm and
w - 3}prrt Neglect the ctrannel length modulation.
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F
Vgr = -2.5V

Fig. I

Sectior-C
Note: Attempt any two questions from this section. (15x2=30)

Q3. (a) Draw InsfiumentationAmplifier. How does it improve

the performance pafttmeters of an Op Amp?

t291t727 s
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 r-
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Define slew rate and show how it is related to

full
(b)
power bandwidth. fur op-amp has a rated output
voltage * tov and slew of rate of lv/us.
what is its
full power band width.
consider the common ernitter circuit using
a BJT
e4. (a)
having ls=lQ'rsA. A collector resistance Rc=6'8
I1g-l

and power suPPlY Vcc=l0v'

(i) Determine the value of bias voltage Vsp required

to ope ratethe transistor at Vgt:} '2Y 'what
is the

coffesPonding value of I.'

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(ii) Find the voltage gain Av at this bias point'

is
(iii)If the input sine wave of SmA peak amplitude
superimposed one Vrr, Find the amplitude
of
outPut sine wave signal'
for
O) Draw the circtrit for CB amplifier and find expression
strort cireuit gain'
arn-
Q5. (a) Draw the T equivalent circuits of conrmon source
plifier with a source amplifier with a source resistance
and G,'
and obtain the expressions for Rin, &ut,

(b) fur inverting amplifier has feedback resistor Rz:500K0

and R,=SI(C}. Find the amplifier circuit
voltage gain,
the output
input resistance and output resistance. Also find
is givar as
voltage and input currmt if the input voltage
.1 volts. Assume the op-AIvIP to be an
ideal one.

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Printed Pages: 02 Sub Code: NEC409A

Paper Id: 131427 Roll No.

(SEM. IV) THEORY EXAMINATION 2017-18

ANALOG AND DIGITAL ELECTRONICS
Time: 3 Hours Total Marks: 100
Note: 1. Attempt all Sections.
2. Assume any missing data.

SECTION A

1. Attempt all questions in brief. 2 x10 = 20

a. What are the different materials used for the manufacturing of LED?
b. Explain V-I characteristics of tunnel diode.
c. What is the necessity of frequency response analysis?
d. What are the advantages of introducing negative feedback?
e. State the Barkhausen criterion for an oscillator.
f. Define piezoelectric effect.
g. Compare combinational and sequential logic circuits.
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h. What is the difference between Decoder and Demultiplexer.

i. Write short note on Schmitt trigger with diagram?
j. Explain PROM in brief.

SECTION B

2. Attempt any three of the following: 10 x 3 = 30

a. Explain the principle and working of light emitting diode (LED) with V-I
characteristics. An LED is connected across a voltage source of +10 V through a
series resistance of 820 Ω. Calculate the LED current. Assume the voltage drop across
an LED of 15 V.
b. Distinguish between current feedback and voltage feedback with appropriate circuit
/block diagram.
c. Explain Hartly oscillator and derive the equation for oscillation?
d. Explain the operation of master slave flip flop and show how the race around
condition is eliminated.
e. Explain the organization of RAM with the help of neat diagram. Also describe the
switching regulators.
SECTION C
3. Attempt any one parts of the following: 10 x 1 = 10
a. What is photodiode? Draw typical I-V characteristic curves at two illumination levels
and explain how does it work as a photo resistor?
b. With the help of output characteristics explain how a transistor is used as a switch.
om

4. Attempt any one parts of the following: 10 x 1 = 10

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a) Draw and explain high frequency equivalent circuit of the typical RC coupled
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b) Describe the properties of series-shunt and shunt-shunt feedback amplifier. List five
characteristics of an amplifier which are modified by negative feedback.
5. Attempt any one parts of the following: 10 x 1 = 10
a) Draw a neat diagram of phase shift oscillator using BJT. Derive an expression for its
frequency of oscillation.
b) Explain the properties of a quartz crystal which are responsible for its use in an
oscillator.
6. Attempt any one parts of the following: 10 x 1 = 10
a) Draw and explain the 4-bit SISO, SIPO, PISO and PIPO shift register with its
waveforms.
b) Design a 3-bit synchronous counter using D-flip flop.
7. Attempt any one parts of the following: 10 x 1 = 10
a) Explain A/D convertor using voltage to frequency convertor. Describe any one
method of A/D convertor.
b) What are the voltage regulators? Discuss the working of shunt and series Op-Amp
based voltage regulators.
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Printed Pages : 1 Roll No. NEC409A

B.TECH.
THEORY EXAMINATION (SEM–IV) 2016-17
ANALOG AND DIGITAL ELECTRONICS
Time : 3 Hours Max. Marks : 100
Note : Be precise in your answer. In case of numerical problem assume data wherever not provided.
SECTION-A
1 Attempt all parts. (2X10=20)
a) Why Si and Ge are not preferred in LED.
b) What is Tunnel diode? Sketch its V-I characteristics and mark negative resistance
region on it.
c) Write down the advantages of negative Feedback.
d) What is the necessity of Frequency response analysis?
e) What is the Barkhausen criteria?
f) Give the names of two piezoelectric materials used in the construction of Crystal
Oscillator.
g) Draw the State Transition Diagram of R-S Flip Flop.
h) Realize a 16x1 multiplexer using two 8x1 multiplexers.
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i) Why photodiode operates only in reverse biased?

j) Give applications of multiplexer.

SECTION-B
2 Attempt any FIVE parts. (10X5=50)
a) Explain the construction, working and application of photodiode with suitable
diagrams.
b) Describe the properties of series-shunt and shunt-shunt feedback Amplifiers.
c) List five characteristics of an amplifier modified by negative feedback.
d) In a Colpitts, inductor L has a small series resistance. Find the expression for frequency
of oscillation.
e) If component values are selected as L = 100mH, C1 = 10pF, C2 = 100pF, r = 50Ω,
R0 = 2.2Ω, calculate (i) Frequency of oscillation (ii) Minimum gain required for
oscillation.
f) Discuss the working of Wien Bridge oscillator and derive its frequency of Oscillation.
(i) Differentiate between Encoder and Decoder.
(ii) Tabulate the excitation table of J-K Flip Flop
g) Explain the operation of a astable multivibrator circuit using an op-amp. Also derive
the expression for cut off frequency.
h) With the help of output characteristics, show how a transistor can be used as a switch.

SECTION-C
Attempt any Two parts. (15X2=50)
3. What are voltage regulators? Discuss the working of Shunt and series op-amp based voltage
regulators.
4. How the construction of a Schottky barrier diode is different from conventional semiconductor
diode. Explain the construction, operation and V-I characteristic of a Schottky diode.
5. Write short notes on (i) Series –Series Topology (ii) Shunt –Series Topology
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Printed Pages: 4 NEC40e(A)

(Following Paper ID and Roll No. to be filled in your
Answer Books)

B.TECH.

Theory Examination (Semester-f$ 20lsl 6

ANALOG & DIGITAL ELECTRONICS

Time.' 3 Hours Max. Marles : 100

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Section-A

Ql. Attempt alt parts. AII parts carry equal marks. Write
answer of each part in short. (2x10:20)

(a) What are the different materials used for the

manufacturing of LED?

(b) What is the drawback in S-R flip-flop? How it can

be eliminated?

(c) What are the various applications of the Multiplexer?

(d) What are the differences between Cornbinational and

Sequential logic circuits?

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(e) What is a priority encoder?

(0 What is the Brakhausen criterion for the

ftedback ,r

amplifiers? .e

(e) W}mt is the effect of negative feedback

on characteris-
tics of an alnplifier?

(h) Mention few properties of series-shunt and

shunt series
feedback amplifiers.

(, What is the principle of,sinusoidal oscillator?

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Section-B

Q2' Attempt any five questions from this section.

(10xS:50)
(a) What is a photodiode? Draw tJpical I-V
characteristic
crrves at two illumination levels and explain
how does
it work as a photoresistor?

O) Draw the logic diagram of a two-to-four

line
decoder using NOR gates only.

(c) An RC coupled amplifier has a voltage gain

of 1000,
{:50H2 and f210a KHz and a distortion of 5%
without feedback. Find the amplifier vortage
gain, f,,
{ *d distortion when negative fredback is applied with
feedback ratio of 0.01.

ngst487 5

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(d) Design a combinational circuit whose input

is a
four-bit number and whose output is the 2,s
compli_
ment of the iuput number. ' r:.
:

(e) Explain the properties of a

ryartzcrystar which are re-
sponsible for its use in an oscillator. |
(D A Colpitt's oscillator is designee! with C,=1g0 pf and
cr=7500 pf. The inductance is variable. Determine
the range of inductance values, if the frequency
of
oscillation is to vary between Zsa wzand 2050
krlz.
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G) Find tlre characteristic equations of all flipflops

with the
help ofK-map.

(h) Explain the working ofthe universal shift register.

Section-C

Note: Attempt any two questions from this

section.
(15x2=30)

Q3. Discuss the current-voltage and capacitance-voltage

charac-
teristics and applications ofthe following:

a) Varactor diode

b) Tunnel diode

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Q4. Draw the low frequency small signal model of a transistor

in CB and CE configurations and explain significance of
each model.

Q5. (a) \\Ihat is the problem associated with the JK flip flop?
How it can be overcome? Explain with necessary
diagrams

(b) An 8-bit successive approximation ADC has a

resolution of 20mV. What will be its digital output
for an analog inPut of 2.L7V?
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I t9s I 4875
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