How To Solve NWELL Antenna Effect - Siliconvlsi

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9/14/24, 2:15 PM How to solve NWELL Antenna Effect - Siliconvlsi

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ANALOG DESIGN

How to solve NWELL Antenna Effect


By siliconvlsi — July 19, 2022 — Updated: May 12, 2024  No Comments  1 Min Read

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What is Nwell Antenna Effect

Nwell is fabricated by ion Implantation, During the fabrication process, some charges are
accumulated on Nwell. The charge build-up may not be from the gate to the body in
CMOS, but It can also be the body(nwell) to the gate of a MOSFET. So we can say that
during fabrication, before contact and metal, there can be a charge build-up on the body
of a pMOS transistor (nwell) relative to the gate. Now after nwell fabrication, the next
step is gate(poly) fabrication for self-alignment purposes, now if the charge on nwell is
huge, then it may, damage the gate oxide under the poly, this is called as nwell antenna
Effect in VLSI.

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NWELL Antenna Effect

How to Solve Nwell Antenna Effect

We should put N+(bulk connection) to Nwell.

The N+/P diode should provide enough leakage to prevent any damage to the gate
oxide.

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