How To Solve NWELL Antenna Effect - Siliconvlsi
How To Solve NWELL Antenna Effect - Siliconvlsi
How To Solve NWELL Antenna Effect - Siliconvlsi
ANALOG DESIGN
Nwell is fabricated by ion Implantation, During the fabrication process, some charges are
accumulated on Nwell. The charge build-up may not be from the gate to the body in
CMOS, but It can also be the body(nwell) to the gate of a MOSFET. So we can say that
during fabrication, before contact and metal, there can be a charge build-up on the body
of a pMOS transistor (nwell) relative to the gate. Now after nwell fabrication, the next
step is gate(poly) fabrication for self-alignment purposes, now if the charge on nwell is
huge, then it may, damage the gate oxide under the poly, this is called as nwell antenna
Effect in VLSI.
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The N+/P diode should provide enough leakage to prevent any damage to the gate
oxide.
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