Transistor Characteristics (Physics Practical)
Transistor Characteristics (Physics Practical)
Transistor Characteristics (Physics Practical)
AIM
To draw the input and output characteristics of medium power P - N-P silicon transistor in common
Emitter (CE) mode.
INTRODUCTION
Trans1stor is the semi- conductor analogue of a triode and is a current operated device. In a transistor
the Emitter base junction is forward blased and Base - Collector junction is reversed Biased.
Transistor are of the two types (i) P- N-- P transistor and () N-P-N transistor.
In aP- N-P transistor the base in a N- type semi - conductor and the emitter and collector are P
type semi conductor. In a p -N- P transistor the base is a P - type semi - conductor and he emitter
and collector are N- type semi-conductor.
A transistor can be connected in three configuration common base common emitter and common
collector. Here we will study the characteristics of P- N- P transistor in common emitter
configuration.
Experimental Procedure
Input characteristics common emitter mode
(a) The connections are made as shown the figure
(b) The collectionof emitter voltage Vog is fixed at 2 volts by using potentiometer P2
-VeE 4
I-+ VcE
C E
MAINS E
P4
P2
ON O
VcE
VeE (PNP)
(NPN)
(c) The base current la adjusted to 25 micro - Amps by using potentiometer P,.
(d) The emitter to base voltage VE iS noted.
(mA)
Ve3V
VVolts)
(e The base current lg is increased in steps of 25 micro Amps and corresponding Vee
values are measured and tabulated keeping Vce always constant measure and
tabulated keeping Vce always constant.
( Steps atod are repeated for different values of collector to emitter voltage VcE
(g) Graph is plotted keeping VaE along X - axis and lg along Y -axis.
Procedure
-VeE Voe +
MAINS
ON O O) +
VaE (NPN (PNP) Vce
Seturnton
Reglon L100uA
,=50A
Cut on VcEota)
Reglon