MOSFET To Students

MOSFET
( Metal-Oxide Field Effect

Transistor)
Introduction
 The MOSFET is a semiconductor device of transistor family,
where the voltage determines the conductivity of the device.
 It is widely used for switching purposes and for amplification

of electronic signals in electronic devices.
 It has ability to change conductivity with the amount of applied

voltage can be used for amplifying or switching electronic
signals.
 A MOSFET is either a core or integrated circuit where it is

designed and fabricated in a single chip because the device is
available in very small sizes.
 MOSFET is the most common transistor used in digital circuits, as

hundreds of thousands or millions of them may be included in a
memory chip or microprocessor.
Image & Symbol of MOSFET
Structure of MOSFET
Types of MOSFET
MOSFET
D-MOSFET E-MOSFET
Depletion-type MOSFET Enhancement-type MOSFET

Schematic Symbol of D-MOSFET with
channels
 It is a four-terminal device with Source (S), Drain (D), Gate (G),
and body (B) terminals.
 The body (B) is frequently connected to the source terminal,

reducing the terminals to three. It works by varying the width of
a channel along which charge carriers flow (electrons or holes).
 The charge carriers enter the channel at the source and exit via
the drain.
 The width of the channel is controlled by the voltage on an

electrode called Gate which is located between the source and the
drain.
 It is insulated from the channel near an extremely thin layer of

metal oxide.
Constructional Image of MOSFET
MOSFET advantaged over JFET
 The device JFET gate terminal must be in reverse biased for its proper
operating condition. i.e.,
 N- channel  Negative gate operation

 P- channel  Positive gate operation
 This shows that, only the width of the channel is decreased from its zero bias
size. (i.e, conductivity of the channel decreases).
 This type of operation is referred as Depletion-mode of operation.
 Therefore JFET can operate only under depletion-mode.
 However, FET can also be operated to enhance (increase) the width of the
channel (i.e, increasing conductivity of the channel).
 This mode is referred as Enhancement-mode of operation.
Field Effect Transistor (FET) that can operated in the enhancement –mode is called a
MOSFET.
Construction of D-MOSFET
n-channel D-MOSFET
 N channel D MOSFET is a piece of n-type
material with a p-type region on the right
and an insulated gate on left
 Id current should flow in the narrow region

between gate and p type region
 A metallic layer is deposited over an Sio2

layer(Insulator), which forms a capacitor
 Here, gate is insulated from channel, so we

can apply either + ve or -ve voltage to the
gate.
 Therefor, D-MOSFET can be operated in both

depletion mode and enhancement mode
Construction of E-MOSFET
n-channel E-MOSFET
 Its gate construction is similar to D-
MOSFET.
 E-MOSFET has no channel b/w S & D
 Substrate extends completely to the Sio2
layer so that no channel exists
 E-MOSFET require proper gate voltage
and polarity to form a channel
 E-MOSFET can be operated only in
enhancement mode.
 E-MOSFET is quite similar to that of D-
MOSFET except for the absence of a
channel between drain and source
Circuit Operation of D-MOSFET
n-channel D-MOSFET
 Gate forms a small capacitor
 When gate is changed, electric field of

capacitor changes, which in turn
changes the resistance of the n-channel
 -ve gate operation is called depletion

mode
 +ve gate operation is called

enhancement mode
Depletion mode
 Since gate is negative, it means
electrons are on the gate as shown
in the 2nd figure.
 These electrons repel the free

electrons in the n-channel,
 The greater the negative voltage on
leaving a layer of positive ions in a
part of the channel as shown in 2nd the gate, the lesser is the current
figure. from source to drain.
 In other words, the n-channel is  Thus by changing the negative

depleted of some of its free voltage on the gate, we can vary the
electrons. resistance of the n-channel and
hence the current from source to
 Therefore, lesser number of free drain.
electrons are available for current  As the action with negative gate
conduction through the n-channel. depends upon depleting the
channel of free electrons, the
 This is same as increasing the negative-gate operation is called
channel resistance. depletion mode.
D-MOSFET Working
VGS =0V
_
+
n n n
P Substrate
VDD
_ +
VGS =-1V
=0V
_
+
n + + +n + + + n
P Substrate
_ +
VDD
VGS =-3V
=-4V
=-2V
=-1V
_
+
n + + +n + + + n
+ + + + +
+ + +
+ +
P Substrate
_ +
VDD
Transfer Characteristics Drain Characteristics
Enhancement mode
 Again the gate acts like a capacitor.
Since the gate is positive, it induces
negative charges in the n-channel as
shown in the 2nd figure.  The greater the positive voltage on
 These negative charges are the free the gate, greater the conduction
electrons drawn into the channel. from source to drain.
 Because these free electrons are  Thus by changing the positive
added to those already in the voltage on the gate, we can change
channel, the total number of free the conductivity of the channel.
electrons in the channel is  Because the action with a positive

increased. gate depends upon enhancing the
 Thus a positive gate voltage conductivity of the channel, the
enhances or increases the positive gate operation is called
conductivity of the channel. enhancement mode.

The following points may be noted about D-MOSFET
operation:
1. In a D-MOSFET, the source to drain current is controlled by the

electric field of capacitor formed at the gate.
2. The gate of a D-MOSFET acts like a capacitor. For this reason it is

possible to operate D-MOSFET with positive or negative gate voltage.
3. As the gate of D-MOSFET forms a capacitor, therefore, negligible gate

current flows whether positive or negative voltage is applied to the
gate. For this reason, the input impedance of D-MOSFET is very
high ranging from 10,000 MΩ to 10,000,00 MΩ.
4. The extremely small dimensions of oxide layer under the gate

terminal results is a very low capacitance and the D-MOSFET has,
therefore, a very low input capacitance. This characteristics makes the
D-MOSFET useful in high frequency applications.
Construction of E-MOSFET
 It operates only in the enhancement

mode and has no depletion mode.
 Its gate construction is similar to
that of D-MOSFET.  Only by applying VGS of proper
magnitude and polarity, the device
 The E-MOSFET has no channel starts conducting.
between source and drain. The
substrate extends completely to the  The minimum value of VGS of proper
SiO2 layer so that no channel exists. polarity that turns on the E-MOSFET is
called threshold voltage [VGS(th)].
 The E-MOSFET requires a proper
gate voltage to form a channel ,  The n-channel device requires positive
VGS (≥VGS(th)) and the p-channel device
called induced channel between the requires negative VGS(≥VGS(th)).
source and the drain.
Operation of E-MOSFET
n-channel E-MOSFET
(i) When VGS= 0V,
There is no channel connecting source and drain.

The p-substrate has only a few thermally produced
free electrons(minority carriers) so that drain
current is almost zero. For this reason, E-MOSFET
is normally OFF when VGS = 0V.
(ii) When VGS is positive, i.e gate is made positive

as shown in fig.(ii), it attracts free electrons into
the p region. The free electrons combine with the
holes next to the SiO2 layer.
If VGS is positive enough, all the holes touching the

SiO2 layer are filled and free electrons begin to
flow from the source to drain.
The effect is same as creating a thin
layer of n-type material i.e. inducing a
thin n-layer adjacent to the SiO2 layer.
Thus the E-MOSFET is turned ON and

drain current ID starts flowing from
the source to the drain.
The minimum value of VGS that turns

the E-MOSFET ON is called threshold
voltage[VGS(th)].
Beyond VGS(th), if the value of VGS is
(iii) When VGS is less than VGS(th) , increased, the newly formed channel
there is no induced channel and the becomes wider, causing to ID to
drain current ID is zero.
increase.
When VGS is equal to VGS(th) , the E-

MOSFET is turned ON and the induced If the value of VGS decreases (not less
channel conducts drain current from than VGS(th)), the channel becomes
the source to the drain. narrower and ID will decrease.
Transfer Characteristics Drain Characteristics
Comparison on N-type & P-type MOSFET

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MOSFET

( Metal-Oxide Field Effect

 It is widely used for switching purposes and for amplification

 It has ability to change conductivity with the amount of applied

 A MOSFET is either a core or integrated circuit where it is

 MOSFET is the most common transistor used in digital circuits, as

Depletion-type MOSFET Enhancement-type MOSFET

 The body (B) is frequently connected to the source terminal,

 The width of the channel is controlled by the voltage on an

 It is insulated from the channel near an extremely thin layer of

 N- channel  Negative gate operation

 This type of operation is referred as Depletion-mode of operation.

 Therefore JFET can operate only under depletion-mode.

 This mode is referred as Enhancement-mode of operation.

 Id current should flow in the narrow region

 A metallic layer is deposited over an Sio2

 Here, gate is insulated from channel, so we

 Therefor, D-MOSFET can be operated in both

 When gate is changed, electric field of

 -ve gate operation is called depletion

 +ve gate operation is called

 These electrons repel the free

 In other words, the n-channel is  Thus by changing the negative

electrons drawn into the channel. from source to drain.

 Because these free electrons are  Thus by changing the positive

added to those already in the voltage on the gate, we can change

channel, the total number of free the conductivity of the channel.

electrons in the channel is  Because the action with a positive

 Thus a positive gate voltage conductivity of the channel, the

enhances or increases the positive gate operation is called

conductivity of the channel. enhancement mode.

1. In a D-MOSFET, the source to drain current is controlled by the

2. The gate of a D-MOSFET acts like a capacitor. For this reason it is

3. As the gate of D-MOSFET forms a capacitor, therefore, negligible gate

4. The extremely small dimensions of oxide layer under the gate

 It operates only in the enhancement

(i) When VGS= 0V,

There is no channel connecting source and drain.

(ii) When VGS is positive, i.e gate is made positive

If VGS is positive enough, all the holes touching the

Thus the E-MOSFET is turned ON and

The minimum value of VGS that turns

When VGS is equal to VGS(th) , the E-

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