PDP8974 Potens Semiconductor
PDP8974 Potens Semiconductor
PDP8974 Potens Semiconductor
General Description
BVDSS RDSON ID
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This 80V 3.9m 120A
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching Features
performance, and withstand high energy pulse in the 80V,120A, RDS(ON) =3.9mΩ@VGS = 10V
avalanche and commutation mode. These devices are Improved dv/dt capability
well suited for high efficiency fast switching applications. Fast switching
100% EAS Guaranteed
TO220 Pin Configuration Green Device Available
D Applications
Networking
Load Switch
LED applications
G
Quick Charger
S S
D
G
Thermal Characteristics
1
80V N-Channel MOSFETs PDP8974
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Off Characteristics
Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 80 --- --- V
△BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.03 --- V/℃
VDS=80V , VGS=0V , TJ=25℃ --- --- 1 uA
IDSS Drain-Source Leakage Current
VDS=64V , VGS=0V , TJ=85℃ --- --- 10 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- 100 nA
On Characteristics
VGS=10V , ID=20A --- 3.2 3.9 m
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V , ID=10A --- 4.6 6.2 m
VGS(th) Gate Threshold Voltage 1 1.6 2.5 V
VGS=VDS , ID =250uA
△VGS(th) VGS(th) Temperature Coefficient --- -5.8 --- mV/℃
gfs Forward Transconductance VDS=10V , ID=5A --- 10 --- S
2
80V N-Channel MOSFETs PDP8974
Square Wave Pulse Duration (s) VDS , Drain to Source Voltage (V)
Fig.5 Normalized Transient Impedance Fig.6 Maximum Safe Operation Area
3
80V N-Channel MOSFETs PDP8974
VDS
90%
10%
VGS
Td(on) Tr Td(off) Tf
Ton Toff
4
80V N-Channel MOSFETs PDP8974
TO220 PACKAGE INFORMATION